JP2001077433A - Light-emitting device and formation method thereof - Google Patents
Light-emitting device and formation method thereofInfo
- Publication number
- JP2001077433A JP2001077433A JP2000198363A JP2000198363A JP2001077433A JP 2001077433 A JP2001077433 A JP 2001077433A JP 2000198363 A JP2000198363 A JP 2000198363A JP 2000198363 A JP2000198363 A JP 2000198363A JP 2001077433 A JP2001077433 A JP 2001077433A
- Authority
- JP
- Japan
- Prior art keywords
- light
- phosphor
- emitting device
- light emitting
- mold member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は発光素子と発光素子
からの波長を変換する蛍光体を用いた発光装置にかかわ
り、特に、コントラスト比と光取り出し効率が高く、量
産性に優れた発光装置を提供することにある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a light emitting element and a phosphor for converting the wavelength of the light emitting element. In particular, the present invention relates to a light emitting device having a high contrast ratio and a high light extraction efficiency and excellent mass productivity. To provide.
【0002】[0002]
【従来技術】本出願人は、高輝度に発光する青色LED
を開発した。また、その応用製品として青色が発光可能
なLEDチップと、そのLEDチップからの光を吸収し
て黄色に発光する蛍光体とを組合せ、LEDチップから
の青色光と、蛍光体から黄色光の混色によって、白色が
発光可能な発光ダイオードを実用化させた。2. Description of the Related Art Applicants have developed a blue LED which emits light with high luminance.
Was developed. In addition, as an applied product, an LED chip that can emit blue light and a phosphor that absorbs light from the LED chip and emits yellow light are combined, and the color mixture of blue light from the LED chip and yellow light from the phosphor As a result, a light emitting diode capable of emitting white light has been put to practical use.
【0003】かかる白色系が発光可能な発光ダイオード
として具体的には、樹脂基板の凹部内にLEDチップを
配置させると共にそのLEDチップをLEDチップから
の青色の可視光を吸収し、黄色の蛍光を発する蛍光体含
有の透光性樹脂で被覆してある。このLEDチップに電
流を流すことによって、一チップ二端子構造の比較的簡
単な構成で白色系が発光可能となる。このため、白色発
光ダイオードとして急速に市場で利用され始めている。[0003] Specifically, as a light emitting diode capable of emitting white light, an LED chip is arranged in a concave portion of a resin substrate, and the LED chip absorbs blue visible light from the LED chip and emits yellow fluorescent light. It is covered with a translucent resin containing a phosphor that emits light. By passing a current through the LED chip, white light can be emitted with a relatively simple configuration of a one-chip two-terminal structure. For this reason, it has begun to be rapidly used in the market as a white light emitting diode.
【0004】このような蛍光体は、可視光を吸収し可視
光を発光するが故に有彩色に着色しており、上述のごと
き、黄色に発光する蛍光体では、外来光が照射されると
蛍光体自体が黄色に見える。そのため、発光ダイオード
の発光観測面側から見ると蛍光体の色に発光ダイオード
の表面が見え、外部からの光によって蛍光体が含有され
た樹脂全体が黄色に自ら発光して見える。そのため、発
光素子の点灯時と非点灯時のコントラスト比が悪くな
る。また、黄色の蛍光体や赤色の蛍光体では、発光観測
面側が黄色や赤色に見え注意色や危険色となるため、視
認性上もこのような発光ダイオードをディスプレイに用
いることは好ましくない。このようなコントラスト比な
どを改善する方法の一つとして蛍光体が含有された樹脂
を、光拡散剤が含有された樹脂で被覆することが考えら
れる。[0004] Such a phosphor is colored chromatically because it absorbs visible light and emits visible light. As described above, a phosphor that emits yellow light emits fluorescent light when irradiated with extraneous light. The body itself looks yellow. Therefore, when viewed from the light emission observing surface side of the light emitting diode, the surface of the light emitting diode can be seen in the color of the phosphor, and the entire resin containing the phosphor appears to emit yellow light by itself from outside. Therefore, the contrast ratio between when the light emitting element is turned on and when it is not turned on is deteriorated. Further, in the case of a yellow phosphor or a red phosphor, the light emission observation surface side looks yellow or red and becomes a cautionary color or a dangerous color. Therefore, it is not preferable to use such a light emitting diode for a display in view of visibility. As one method of improving such a contrast ratio or the like, it is conceivable to coat a resin containing a phosphor with a resin containing a light diffusing agent.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、蛍光体
が含有された樹脂とは別に光拡散剤を含有させた樹脂で
封止する場合は、形成工程が複雑化し量産性などが低
い。また、より小型化の発光装置が求められる現在にお
いては、異なる樹脂を精度良く形成させることが極めて
難しく、歩留まりが低下する傾向にあるという問題があ
った。そこで本発明は、かかる問題を解決して量産性よ
くコントラスト比に優れた発光装置及びその形成方法を
提供するものである。However, in the case of sealing with a resin containing a light diffusing agent separately from the resin containing the phosphor, the forming process becomes complicated and mass productivity is low. Further, at the present time when a light-emitting device of a smaller size is required, there is a problem that it is extremely difficult to form a different resin with high accuracy, and the yield tends to decrease. Accordingly, the present invention is to solve such a problem and to provide a light emitting device which is excellent in mass productivity and has an excellent contrast ratio, and a method for forming the same.
【0006】[0006]
【課題を解決するための手段】本発明は、可視光を発光
する半導体発光素子と、この半導体発光素子を被覆する
透光性モールド部材と、透光性モールド部材に含有され
た半導体発光素子からの可視光を吸収して、その可視光
よりも長波長の可視光を発光する蛍光体及び光拡散剤と
を有する発光装置である。特に、本発明では蛍光体と透
光性モールド部材及び拡散剤の関係を、蛍光体の比重が
透光性モールド部材及び光拡散剤よりも大きくしてあ
る。SUMMARY OF THE INVENTION The present invention provides a semiconductor light emitting device that emits visible light, a light transmitting mold member that covers the semiconductor light emitting device, and a semiconductor light emitting device contained in the light transmitting mold member. And a light-diffusing agent that absorbs visible light and emits visible light having a longer wavelength than the visible light. In particular, in the present invention, the relationship between the phosphor, the translucent mold member, and the diffusing agent is such that the specific gravity of the phosphor is greater than that of the translucent mold member and the light diffusing agent.
【0007】これによって、コントラスト比の高い発光
装置を比較的簡単に形成させることができる。また、蛍
光体の使用量をより減らしつつ、白色系が発光可能な発
光装置とすることができる。また、繰り返しの使用にお
いても信頼性の高い発光装置とすることができる。Thus, a light emitting device having a high contrast ratio can be formed relatively easily. Further, a light emitting device capable of emitting white light can be provided while further reducing the amount of phosphor used. Further, a light-emitting device with high reliability can be provided even in repeated use.
【0008】また、請求項2に記載の発光装置は、蛍光
体の粒径が1μm以上100μm以下である。これによ
って、量産性及び発光効率のより優れた発光装置とする
ことができる。また、半導体発光素子からの光と蛍光体
からの合成光を放出させる発光装置において、色むらや
輝度むらのより少ない発光装置とすることができる。Further, in the light emitting device according to the second aspect, the particle diameter of the phosphor is 1 μm or more and 100 μm or less. This makes it possible to provide a light-emitting device that is more excellent in mass productivity and luminous efficiency. Further, in a light emitting device that emits light from a semiconductor light emitting element and combined light from a phosphor, a light emitting device with less color unevenness and luminance unevenness can be provided.
【0009】請求項3に記載の発光装置は、蛍光体がC
eで付活された(Y2O3・5/3Al2O3)YAG、E
u及び/又はCrで付活された窒素含有CaO-Al2O
3-SiO2から選択される1種である。これにより簡便
で高輝度に信頼性の高い混色発光可能な発光装置とする
ことができる。According to a third aspect of the present invention, in the light emitting device, the phosphor is C
It was activated by e (Y 2 O 3 · 5 / 3Al 2 O 3) YAG, E
nitrogen-containing CaO-Al 2 O activated with u and / or Cr
3 is a one selected from -SiO 2. This makes it possible to provide a simple and highly reliable light emitting device capable of emitting mixed colors with high luminance.
【0010】請求項4に記載の発光装置の形成方法は、
可視光を発光する半導体発光素子と、半導体発光素子を
被覆する透光性モールド部材と、透光性モールド部材に
前記半導体発光素子からの可視光を吸収して、その可視
光よりも長波長の可視光を発光する蛍光体と、光拡散剤
とを有する発光装置の形成方法である。特に、透光性モ
ールド部材となる材料中に透光性モールド部材及び光拡
散剤よりも比重が大きい蛍光体を含有させる工程と、半
導体発光素子上に光拡散剤及び蛍光体が含有された透光
性モールド部材となる材料を被覆させる工程と、透光性
モールド部材となる材料の粘度を低下させた後、硬化さ
せる工程とを有する。これによって、比較的簡単に蛍光
体の使用量が少なく混色性に優れた発光装置を歩留まり
よく形成させることができる。[0010] According to a fourth aspect of the present invention, there is provided a method for forming a light emitting device.
A semiconductor light-emitting element that emits visible light, a light-transmissive mold member that covers the semiconductor light-emitting element, and a light-transmissive mold member that absorbs visible light from the semiconductor light-emitting element and has a longer wavelength than the visible light. This is a method for forming a light emitting device including a phosphor that emits visible light and a light diffusing agent. In particular, the step of including a phosphor having a higher specific gravity than the light-transmitting mold member and the light diffusing agent in the material to be the light-transmitting mold member, and the step of transmitting the light diffusing agent and the phosphor on the semiconductor light emitting element. The method includes a step of coating a material to be a light-transmissive mold member, and a step of curing after reducing the viscosity of the material to be a light-transmissive mold member. This makes it possible to relatively easily form a light emitting device with a small amount of phosphor used and excellent color mixing properties with a high yield.
【0011】請求項5に記載の発光装置の形成方法は、
可視光を発光する半導体発光素子と、半導体発光素子を
被覆する透光性モールド部材と、透光性モールド部材に
前記半導体発光素子からの可視光を吸収して、その可視
光よりも長波長の可視光を発光する蛍光体と、光拡散剤
とを有する発光装置の形成方法である。特に、透光性モ
ールド部材となる材料中の光拡散剤及び蛍光体の分布状
態を分離させる工程と、透光性モールド部材となる材料
を硬化させる工程とを有する発光装置の形成方法であ
る。これによって、比較的簡単に蛍光体の使用量が少な
く混色性に優れた発光装置を歩留まりよく形成させるこ
とができる。また、制御性よくコントラストを調整させ
ることもできる。[0011] According to a fifth aspect of the invention, there is provided a method for forming a light emitting device.
A semiconductor light-emitting element that emits visible light, a light-transmissive mold member that covers the semiconductor light-emitting element, and a light-transmissive mold member that absorbs visible light from the semiconductor light-emitting element and has a longer wavelength than the visible light. This is a method for forming a light emitting device including a phosphor that emits visible light and a light diffusing agent. In particular, the present invention relates to a method for forming a light emitting device including a step of separating a distribution state of a light diffusing agent and a phosphor in a material to be a translucent mold member and a step of curing the material to be a translucent mold member. This makes it possible to relatively easily form a light emitting device with a small amount of phosphor used and excellent color mixing properties with a high yield. Further, the contrast can be adjusted with good controllability.
【0012】[0012]
【発明の実施の形態】本発明者は種々の実験の結果、蛍
光体、光拡散剤及びそれらを含有させる樹脂の比重を特
定の関係とすることによって、比較的簡単な方法で信頼
性の高い発光ダイオードを形成できることを見出し本発
明を成したものである。BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventor has determined that the specific gravities of the phosphor, the light diffusing agent and the resin containing them are in a specific relationship, thereby achieving a high reliability by a relatively simple method. The inventors have found that a light emitting diode can be formed, and have made the present invention.
【0013】すなわち、赤色や黄色など有彩色に着色し
た蛍光体を、光拡散剤や蛍光体を含有させる樹脂よりも
比重が大きいものに選択する。この様に選択された樹脂
中に蛍光体、光拡散剤を含有させ、これらで発光素子を
被覆し硬化させる。樹脂の硬化時などに生ずる樹脂粘性
低下と比重の違いによって、比重の大きい蛍光体は発光
素子側に沈降する。他方、光拡散剤は、分散あるいは発
光素子と対向する表面側に分布する。したがって、発光
観測面側からは、有彩色の蛍光体の色が光拡散剤で緩和
される、あるいは無彩色に見えることになる。以下、本
発明の具体的実施態様について、詳述するがこれのみに
限定されないことはいうまでもない。 (実施態様例1)発光装置100であるチップタイプL
EDを例として示す。金属平板を打ち抜きによって形成
させたリード電極を金型内に配置させて樹脂をインサー
ト成形する。これによって、発光素子を配置させるパッ
ケージを形成させることができる。That is, a phosphor colored in a chromatic color such as red or yellow is selected to have a higher specific gravity than the light diffusing agent or the resin containing the phosphor. A phosphor and a light diffusing agent are contained in the resin selected in this manner, and the light emitting element is coated and cured with these. Due to a decrease in resin viscosity and a difference in specific gravity caused when the resin is cured, a phosphor having a large specific gravity sinks to the light emitting element side. On the other hand, the light diffusing agent is dispersed or distributed on the surface side facing the light emitting element. Therefore, from the emission observation surface side, the color of the chromatic phosphor is relaxed by the light diffusing agent or looks achromatic. Hereinafter, specific embodiments of the present invention will be described in detail, but needless to say, the present invention is not limited thereto. (Embodiment Example 1) Chip type L which is the light emitting device 100
ED is shown as an example. A lead electrode formed by punching a metal flat plate is arranged in a mold, and resin is insert-molded. Thus, a package in which the light emitting element is arranged can be formed.
【0014】パッケージには、発光素子からの光を効率
よく集光するためにキャビティを形成させキャビティ内
に発光素子を配置させても良い。また、反射鏡となるキ
ャビティを形成することなく、一対の対向する電極を持
った平板状基板を利用することもできる。平板状基板を
利用する場合は、孔版印刷法などを利用することによっ
て本発明の発光装置を形成させることができる。このよ
うなパッケージは、液晶ポリマーなど各種樹脂やガラス
エポキシ樹脂基板、セラミック基板など所望に応じて種
々のものを利用することができる。In the package, a cavity may be formed in order to efficiently collect light from the light emitting element, and the light emitting element may be arranged in the cavity. Further, a flat substrate having a pair of opposed electrodes can be used without forming a cavity serving as a reflecting mirror. When a flat substrate is used, the light emitting device of the present invention can be formed by using a stencil printing method or the like. As such a package, various resins such as a liquid crystal polymer, a glass epoxy resin substrate, and a ceramic substrate can be used as desired.
【0015】本実施態様例1では図1の断面図に示すよ
うに表面に凹部となるキャビティ104を持ち、キャビ
ティ104内部には一対の対向するリード電極105が
露出したパッケージを利用した。一対の対向するリード
電極105は上述の鉄入り銅などの金属平板を利用して
形成させてある。リード電極105はキャビティ104
底面側からパッケージの側面まで延在しており外部から
の電流を発光素子となるLEDチップ106に供給する
働きをする。In the first embodiment, as shown in the cross-sectional view of FIG. 1, a package having a cavity 104 serving as a concave portion on the surface and having a pair of opposed lead electrodes 105 exposed inside the cavity 104 was used. The pair of opposing lead electrodes 105 are formed using a metal flat plate such as the above-described iron-containing copper. The lead electrode 105 is connected to the cavity 104
It extends from the bottom surface side to the side surface of the package, and functions to supply an external current to the LED chip 106 serving as a light emitting element.
【0016】LEDチップ106からの発光によって蛍
光体101を励起させるためには、LEDチップ106
からの光の方が蛍光体101から放出される光よりも短
波長の方が効率よい。そのため、LEDチップ106と
しては種々の材料や構造を利用することができるが、高
効率に発光輝度の高い可視光を発光可能な半導体素子と
して、窒化物半導体(InxGayAl1-x-yN、0≦x
≦1、0≦y≦1)を発光層に利用したものが好適に挙
げられる。窒化物半導体を利用した発光素子はサファイ
ア基板、スピネル基板やSiC、GaN単結晶などの上
に形成させることができるが、量産性と結晶性を満たす
ものとしてサファイア基板上に低温バッファ層を介して
n型及びp型の窒化物半導体を有するものが好ましい。
n型及びp型の窒化物半導体を絶縁基板であるサファイ
ア基板上に形成した場合、エッチングによりn型及びp
型の窒化物半導体を露出させ同一面側に各電極を形成さ
せる。In order to excite the phosphor 101 by light emission from the LED chip 106, the LED chip 106
Light having a shorter wavelength is more efficient than light emitted from the phosphor 101. Therefore, As the LED chip 106 may utilize a variety of materials and structures, as capable of emitting semiconductor elements high visible light emission luminance with high efficiency, a nitride semiconductor (In x Ga y Al 1- xy N , 0 ≦ x
.Ltoreq.1, 0.ltoreq.y.ltoreq.1) are preferably used for the light emitting layer. A light emitting device using a nitride semiconductor can be formed on a sapphire substrate, a spinel substrate, a single crystal of SiC or GaN, etc. Those having n-type and p-type nitride semiconductors are preferable.
When n-type and p-type nitride semiconductors are formed on a sapphire substrate which is an insulating substrate, the n-type and p-type
Each electrode is formed on the same surface side by exposing the mold nitride semiconductor.
【0017】こうして形成されたLEDチップ106を
パッケージ内部にエポキシ樹脂を用いてダイボンド固定
すると共にパッケージに設けられたリード電極105
と、LEDチップの各電極とをそれぞれ金線を用いてワ
イヤボンディングさせる(図1(A))。なお、リード
電極と発光素子との電気的接続はワイヤーのほか、フリ
ップチップ型の発光素子の場合、半田やAgペーストな
どを利用して電気的に接続させることもできる。The LED chip 106 thus formed is die-bonded inside the package using epoxy resin, and the lead electrodes 105 provided on the package are fixed.
And the electrodes of the LED chip are wire-bonded using gold wires, respectively (FIG. 1A). In addition, in the case of a flip-chip type light emitting element, the lead electrode and the light emitting element can be electrically connected by using solder, Ag paste, or the like, in addition to a wire.
【0018】他方、本発明に用いられる蛍光体101は
可視光が発光可能な発光素子106からの発光を吸収
し、可視光が発光可能な種々のものを利用することがで
きる。特に、LEDチップ106からの青色可視光と、
蛍光体101からの黄色の可視光との混色を利用した白
色系が発光可能な発光ダイオードを構成する場合、Zn
S:Ag,ClやZnS:Cu,AlなどのZnS系蛍
光体(比重4〜5)やYAG:CeなどのYAG(Y2
O3・5/3Al2O3)系蛍光体(比重4から7)など
を利用することができる。On the other hand, as the phosphor 101 used in the present invention, various kinds of substances capable of absorbing visible light and emitting visible light can be used. In particular, blue visible light from the LED chip 106,
When forming a light emitting diode capable of emitting white light using mixed color with yellow visible light from the phosphor 101, Zn
ZnS-based phosphors (specific gravity 4 to 5) such as S: Ag, Cl and ZnS: Cu, Al; and YAG (Y 2 ) such as YAG: Ce
O 3 · 5 / 3Al 2 O 3) based phosphor (specific gravity 4 7) or the like can be used.
【0019】他にも青色、青緑色や緑色を吸収して赤色
が発光可能な蛍光体としては、Eu及び/又はCrで付
活されたサファイヤ(酸化アルミニウム)蛍光体やEu
及び/又はCrで付活された窒素含有CaO-Al2O3-
SiO2蛍光体(オキシナイトライド蛍光硝子)などが
挙げられる。これらの蛍光体を利用して発光素子からの
光と蛍光体からの光の混色により白色光を得ることもで
きる。なお、本発明の比重差を満たす限り蛍光顔料だけ
でなく蛍光染料を利用することもできる。蛍光染料であ
る有機蛍光体は無機蛍光体と比較して一般的に発光効率
が高い。しかしながら、比重差を大きくとることが難し
く量産性を考慮すると蛍光顔料の方が好ましい。なお、
有機系光染料を利用する場合は、ペリレン系誘導体など
を好適に利用することができる。なお、これらの蛍光体
を適宜組み合わせて所望の演色性や色を得ることもでき
る。Other phosphors capable of absorbing blue, blue-green or green and emitting red light include sapphire (aluminum oxide) phosphor activated with Eu and / or Cr, and Eu.
And / or Cr-activated CaO-Al 2 O 3 -containing nitrogen
SiO 2 phosphor (oxynitride fluorescent glass) and the like. Using these phosphors, white light can also be obtained by mixing colors of light from the light emitting element and light from the phosphors. In addition, not only fluorescent pigments but also fluorescent dyes can be used as long as the specific gravity difference of the present invention is satisfied. Organic phosphors that are fluorescent dyes generally have higher luminous efficiency than inorganic phosphors. However, it is difficult to make the difference in specific gravity large, and in consideration of mass productivity, a fluorescent pigment is more preferable. In addition,
When an organic photodye is used, a perylene derivative or the like can be suitably used. In addition, desired color rendering properties and colors can be obtained by appropriately combining these phosphors.
【0020】本発明の蛍光体は形成時に蛍光体を含有さ
せる透光性モールド部材、蛍光体の色を見かけ上なくす
光拡散剤との比重差を利用するため種々選択することが
できる。また、形成時の量産性をさらに向上させるため
には、蛍光体101及び光拡散剤102が含有される透
光性モールド部材103の粘度や蛍光体101の粒径が
影響する。すなわち、透光性モールド部材103となる
材料の粘性が低い場合や、蛍光体101の粒径が大きい
場合は透光性モールド部材103となる材料との比重差
による分離沈降が促進する傾向にある。また、粉砕工程
での結晶破壊などにより、無機蛍光体101では粒径が
小さくなると変換効率が低下する傾向にある。さらに、
あまり小さくなりすぎると凝集体を構成するために透光
性モールド樹脂部材中への分散性が低下し発光装置から
の色むらや輝度むらを引き起こす傾向にある。The phosphor of the present invention can be variously selected in order to utilize a specific gravity difference between a light-transmitting mold member containing the phosphor at the time of formation and a light diffusing agent that makes the color of the phosphor apparently disappear. Further, in order to further improve the mass productivity at the time of formation, the viscosity of the translucent mold member 103 containing the phosphor 101 and the light diffusing agent 102 and the particle size of the phosphor 101 are affected. That is, when the viscosity of the material forming the light-transmitting mold member 103 is low or when the particle size of the phosphor 101 is large, the separation and sedimentation due to the difference in specific gravity from the material forming the light-transmitting mold member 103 tends to be promoted. . In addition, when the particle diameter of the inorganic phosphor 101 is reduced due to crystal destruction in the pulverizing step, the conversion efficiency tends to decrease. further,
If the particle size is too small, an agglomerate is formed, so that the dispersibility in the translucent mold resin member is reduced, which tends to cause color unevenness and luminance unevenness from the light emitting device.
【0021】そのため、透光性モールド部材103の材
料や蛍光体101にもよるが、蛍光体101の平均粒径
は1〜100μmが好ましく、5〜20μmがより好ま
しい。本発明に用いられる具体的蛍光体101として、
Ceで付活されたYAG系蛍光体(Y、Lu、Sc、L
a、Gd及びSmから選ばれた少なくとも1つの元素
と、Al、Ga及びInからなる群から選ばれた少なく
とも1つの元素とを含んでなるセリウムで付活されたガ
ーネット系蛍光体)を挙げる。YAG系蛍光体はY、G
d、Ceの希土類元素を化学量論比で酸に溶解した溶解
液を蓚酸で沈降させる。これを焼成して得られる共沈酸
化物と酸化アルミニウムを混合して混合原料を得る。こ
れにフラックスとしてフッ化アンモニウムを混合して坩
堝に詰め、空気中1400℃の温度で170分焼成して
焼成品を得た。焼成品を水中でボールミルして洗浄、分
離、乾燥、最後に篩を通してYAG系蛍光体を形成させ
ることができる。本実施態様例1のYAG系蛍光体とし
ては、(Y0.8Gd0.2)3Al5O12:Ceを利用する。こ
の蛍光体101の比重は約5.0であり、平均粒径は5
μmであった。Therefore, the average particle diameter of the phosphor 101 is preferably 1 to 100 μm, more preferably 5 to 20 μm, although it depends on the material of the light-transmitting mold member 103 and the phosphor 101. As a specific phosphor 101 used in the present invention,
YAG-based phosphor activated by Ce (Y, Lu, Sc, L
A cerium-activated garnet-based phosphor containing at least one element selected from a, Gd, and Sm and at least one element selected from the group consisting of Al, Ga, and In). YAG phosphors are Y, G
A solution of a rare earth element of d and Ce dissolved in an acid in a stoichiometric ratio is precipitated with oxalic acid. A co-precipitated oxide obtained by calcining this is mixed with aluminum oxide to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at 1400 ° C. for 170 minutes to obtain a fired product. The fired product can be ball-milled in water, washed, separated, dried, and finally passed through a sieve to form a YAG phosphor. As the YAG phosphor of the first embodiment, (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce is used. This phosphor 101 has a specific gravity of about 5.0 and an average particle size of 5
μm.
【0022】同様に、本発明に用いられる他の具体的蛍
光体として、Eu及び/又はCrで付活された窒素含有
CaO-Al2O3-SiO2蛍光体が挙げられる。このE
u及び/又はCrで付活された窒素含有CaO-Al2O
3-SiO2蛍光体は、酸化アルミニウム、酸化イットリ
ウム、窒化珪素及び酸化カルシウムなどの原料に希土類
原料を所定比に混合した粉末を窒素雰囲気下において1
300℃から1900℃(より好ましくは1500℃か
ら1750℃)において溶融し成形させる。成形品をボ
ールミルして洗浄、分離、乾燥、最後に篩を通して蛍光
体を形成させることができる。これにより450nmに
ピークをもった励起スペクトルと約650nmにピーク
がある青色光により赤色発光が発光可能なEu及び/又
はCrで付活されたCa-Al-Si-O-N系オキシナイ
トライド蛍光硝子とすることができる。Similarly, another specific phosphor used in the present invention is a nitrogen-containing CaO—Al 2 O 3 —SiO 2 phosphor activated with Eu and / or Cr. This E
nitrogen-containing CaO-Al 2 O activated with u and / or Cr
The 3- SiO 2 phosphor is prepared by mixing a powder obtained by mixing a rare earth material with a material such as aluminum oxide, yttrium oxide, silicon nitride, and calcium oxide at a predetermined ratio in a nitrogen atmosphere.
It is melted and molded at 300 ° C. to 1900 ° C. (more preferably 1500 ° C. to 1750 ° C.). The molded article can be ball-milled, washed, separated, dried, and finally passed through a sieve to form the phosphor. Thus, Ca-Al-Si-ON-based oxynitride fluorescence activated by Eu and / or Cr capable of emitting red light emission by an excitation spectrum having a peak at 450 nm and a blue light having a peak at about 650 nm. It can be glass.
【0023】なお、Eu及び/又はCrで付活されたC
a-Al-Si-O-N系オキシナイトライド蛍光硝子の窒
素含有量を増減することによって発光スペクトルのピー
クを575nmから690nmに連続的にシフトするこ
とができる。同様に、励起スペクトルも連続的にシフト
させることができる。そのため、Mg、Znなどの不純
物がドープされたGaNやInGaNを発光層に含む窒
化ガリウム系化合物半導体からの光と、約580nmの
蛍光体の光の合成光により白色系を発光させることがで
きる。特に、約490nmの光が高輝度に発光可能なI
nGaNを発光層に含む窒化ガリウム系化合物半導体か
らなる発光素子との組合せに理想的に発光を得ることも
できる。In addition, C activated by Eu and / or Cr
By increasing or decreasing the nitrogen content of the a-Al-Si-ON-based oxynitride fluorescent glass, the peak of the emission spectrum can be continuously shifted from 575 nm to 690 nm. Similarly, the excitation spectrum can be shifted continuously. Therefore, white light can be emitted by combined light of a gallium nitride-based compound semiconductor containing GaN or InGaN doped with an impurity such as Mg or Zn in a light-emitting layer and light of a phosphor of about 580 nm. In particular, I which can emit light of about 490 nm with high luminance
Light emission can be obtained ideally in combination with a light-emitting element made of a gallium nitride-based compound semiconductor containing nGaN in the light-emitting layer.
【0024】また、上述のCeで付活されたYAG系蛍
光体とEu及び/又はCrで付活された窒素含有Ca-
Al-Si-O-N系オキシナイトライド蛍光硝子とを組
み合わせることにより青色系が発光可能な発光素子を利
用してRGB(赤色、緑色、青色)成分を高輝度に含む
極めて演色性の高い発光ダイオードを形成させることも
できる。このため、所望の顔料を添加するだけで任意の
中間色も極めて簡単に形成させることができる。本発明
においては何れの蛍光体も無機蛍光体であり、有機の光
散乱剤やSiO2などを利用して高コントラストと優れ
た量産性が両立した発光ダイオードを形成させることが
できる。Further, the above-described YAG-based phosphor activated by Ce and the nitrogen-containing Ca-activated by Eu and / or Cr are used.
Combination with Al-Si-ON-based oxynitride fluorescent glass makes use of a light-emitting element capable of emitting blue light to emit light with extremely high color rendering properties including RGB (red, green, blue) components at high luminance. A diode can also be formed. For this reason, an arbitrary intermediate color can be formed very simply by adding a desired pigment. In the present invention, any of the phosphors is an inorganic phosphor, and a light emitting diode having both high contrast and excellent mass productivity can be formed by using an organic light scattering agent or SiO 2 .
【0025】蛍光体101を光拡散剤102と共に透光
性モールド部材103となる材料中に含有し攪拌させ
る。ここで本発明に用いられる光拡散剤102は蛍光体
101と比較して比重の軽いものであり、蛍光体101
の着色を外部から視認しにくくさせるものである。した
がって、透光性モールド部材103中に含有させること
で白色に見えるものや補色関係にある色の光拡散剤10
2によって灰色や黒の無彩色とすることができる。The phosphor 101 is contained together with the light diffusing agent 102 in a material for the light-transmitting mold member 103 and is stirred. Here, the light diffusing agent 102 used in the present invention has a lower specific gravity than the phosphor 101, and the phosphor 101
Is made difficult to visually recognize from outside. Therefore, when the light diffusing agent 10 is contained in the translucent mold member 103, the light diffusing agent 10 has a color that looks white or has a complementary color.
2, it is possible to make gray or black achromatic.
【0026】光拡散剤102としては、蛍光体101と
比重差が大きいものほど量産性に優れる。その中でも透
光性モールド部材103の比重よりも小さい光拡散剤1
02を選択することで、光拡散剤102が透光性モール
ド部材103の表面に浮いてくる。これは蛍光体101
が含有された層、実質的に蛍光体101や光拡散剤10
2が含有されていない透光性となる層、光拡散剤103
が含有された層に分離して見える。このような見かけ
上、3層以上の層構成とすることで蛍光体自体の色を隠
蔽する効果が均一に光拡散剤及び蛍光体が含有されたも
のに比べて良好となる。As the light diffusing agent 102, the one having a larger difference in specific gravity from the phosphor 101 is more excellent in mass productivity. Among them, the light diffusing agent 1 smaller than the specific gravity of the translucent mold member 103
By selecting 02, the light diffusing agent 102 floats on the surface of the translucent mold member 103. This is phosphor 101
, The phosphor 101 and the light diffusing agent 10
Light-transmitting layer containing no 2 and light diffusing agent 103
Appears separately in the layer containing. Apparently, by using three or more layers, the effect of concealing the color of the phosphor itself becomes better than that in which the light diffusing agent and the phosphor are uniformly contained.
【0027】さらに、LEDチップ106から放出され
た光は、光拡散剤102が含有された層で反射される。
そのため、蛍光体101が含有された層状に見える部分
では、光の光路長が実質的に長くなる。そのため、光拡
散剤を含有させない以外は同様に形成させた発光ダイオ
ードと比べて蛍光体101の含有量を少なくすることも
できる。また、蛍光体101とLEDチップ106から
放出される光の混色性が増すことによって、より均一な
混色光を得やすくすることができるという優れた特徴を
有する。なお、光拡散剤102の選択は比重のみならず
屈折率や粒径を選択することによっても大きく変化す
る。すなわち、透光性モールド部材103と光拡散剤1
02との屈折率差が大きくなるに従って、光り取り出し
効率が向上する傾向にある。また、光拡散剤102の粒
径が小さいものほど光取り出し効率が向上する傾向にあ
る。他方、光拡散剤102の平均粒径が小さくなりすぎ
ると透光性モールド部材103中に多く含有させても透
明度が高くなる。そのため、光拡散剤102の平均粒径
は0.5μより大きく、10μmより小さいことが好ま
しい。更に好ましくは、平均粒径0.5μmより大き
く、5μmより小さいものである。Further, the light emitted from the LED chip 106 is reflected by the layer containing the light diffusing agent 102.
Therefore, the optical path length of light becomes substantially longer in a portion that looks like a layer containing the phosphor 101. Therefore, the content of the phosphor 101 can be reduced as compared with a light emitting diode formed similarly except that the light diffusing agent is not contained. In addition, there is an excellent feature that color mixing of light emitted from the phosphor 101 and the LED chip 106 is increased, so that more uniform mixed light can be easily obtained. Note that the selection of the light diffusing agent 102 greatly changes depending on not only the specific gravity but also the refractive index and the particle size. That is, the light transmitting mold member 103 and the light diffusing agent 1
As the difference in the refractive index from that of 02 increases, the light extraction efficiency tends to increase. Further, the smaller the particle size of the light diffusing agent 102, the higher the light extraction efficiency tends to be. On the other hand, if the average particle size of the light diffusing agent 102 is too small, the transparency becomes high even if the light diffusing agent 102 is contained in the translucent mold member 103 in a large amount. Therefore, the average particle size of the light diffusing agent 102 is preferably larger than 0.5 μm and smaller than 10 μm. More preferably, the average particle size is larger than 0.5 μm and smaller than 5 μm.
【0028】光拡散剤102として具体的には二酸化珪
素(比重2.2)、炭酸カルシュウム(比重2.9
3)、酸化チタン(比重4.26)、酸化亜鉛(比重
5.8)、酸化アルミニウム(比重3.9)、チタン酸
バリウム(比重5.5)などの無機粉体からなる光拡散
剤やエポキシ樹脂(比重1.2)、フェノール・ホルマ
リン樹脂(比重1.2)、ベンゾグアナミン樹脂(比重
1.4)、メラミン樹脂(比重1.4)、アクリル樹脂
(比重1.2)、ポリカーボネート樹脂(比重1.
2)、ポリエチレン樹脂(比重0.95)、ポリプロピ
レン樹脂(比重0.9)等の有機物粉体からなる光拡散
剤が挙げられる。As the light diffusing agent 102, specifically, silicon dioxide (specific gravity 2.2), calcium carbonate (specific gravity 2.9)
3) a light diffusing agent comprising an inorganic powder such as titanium oxide (specific gravity 4.26), zinc oxide (specific gravity 5.8), aluminum oxide (specific gravity 3.9), barium titanate (specific gravity 5.5); Epoxy resin (specific gravity 1.2), phenol / formalin resin (specific gravity 1.2), benzoguanamine resin (specific gravity 1.4), melamine resin (specific gravity 1.4), acrylic resin (specific gravity 1.2), polycarbonate resin ( Specific gravity 1.
2) Light-diffusing agents composed of organic powders such as polyethylene resin (specific gravity 0.95) and polypropylene resin (specific gravity 0.9).
【0029】他方、透光性モールド部材としては発光素
子及び蛍光体からの光に対して耐光性が高く、透光性に
優れたものが好ましい。また、発光素子を被覆する保護
膜として働く場合にはある程度の剛性が要求される。透
光性モールド部材の材料として具体的にはエポキシ樹脂
(比重1.2)、シリコーン樹脂(比重1.0)、ウレ
タン樹脂(比重1.2)、不飽和ポリエステル樹脂(比
重1.2)、アクリルウレタン樹脂(比重1.2)、ポ
リイミド樹脂(比重1.3)等の無溶剤、あるいは溶剤
タイプの液状透光性熱硬化樹脂が好適に挙げられる。同
様に、アクリル樹脂(比重1.2)、ポリカーボネート
樹脂(比重1.2)、ポリノルボルネン樹脂(比重1.
1)等の溶剤タイプの液状透光性熱可塑樹脂も利用する
ことができる。さらに、有機物だけでなく二酸化珪素な
どの無機物やゾル−ゲル法にて形成した二酸化珪素及び
アクリル樹脂などを混合したハイブリッド樹脂も好適に
利用することができる。On the other hand, it is preferable that the light-transmitting mold member has high light resistance to light from the light-emitting element and the phosphor and has excellent light-transmitting property. In addition, when acting as a protective film for covering a light emitting element, a certain degree of rigidity is required. Specific examples of the material of the translucent mold member include an epoxy resin (specific gravity 1.2), a silicone resin (specific gravity 1.0), a urethane resin (specific gravity 1.2), an unsaturated polyester resin (specific gravity 1.2), A non-solvent such as an acrylic urethane resin (specific gravity 1.2) and a polyimide resin (specific gravity 1.3) or a solvent-type liquid translucent thermosetting resin is preferably used. Similarly, acrylic resin (specific gravity 1.2), polycarbonate resin (specific gravity 1.2), polynorbornene resin (specific gravity 1.
Solvent-type liquid translucent thermoplastic resins such as 1) can also be used. Furthermore, not only organic substances but also inorganic substances such as silicon dioxide, and hybrid resins obtained by mixing silicon dioxide formed by a sol-gel method and acrylic resin can be suitably used.
【0030】透光性モールド部材103が発光装置の最
表面側に設けられ外部環境から内部を保護する必要があ
る場合には、無用剤タイプの液状熱硬化性樹脂を好適に
利用することができる。他方、透光性モールド部材10
3を更に樹脂などで被覆する場合などは透光性モールド
部材103との密着性を考慮して上述で記載した樹脂を
種々選択して利用することができる。When the translucent mold member 103 is provided on the outermost surface side of the light emitting device and it is necessary to protect the inside from the external environment, a useless liquid thermosetting resin can be suitably used. . On the other hand, the translucent mold member 10
In the case where 3 is further covered with a resin or the like, the resin described above can be variously selected and used in consideration of the adhesion to the translucent mold member 103.
【0031】具体的には、光拡散剤102としてメラミ
ン樹脂(比重1.4)を蛍光体として(Y0.8Gd0.2)3
Al5O12:Ce(比重5.1)、透光性モールド部材
としてエポキシ樹脂(比重1.2)中に含有させて攪拌
させる。このときのエポキシ樹脂の粘度は700cpで
ある。この状態では蛍光体と光拡散剤は透光性モールド
部材となる樹脂中でほぼ均一に分散するように混ぜてあ
る。Specifically, a melamine resin (specific gravity 1.4) is used as the light diffusing agent 102 as a fluorescent material, and (Y 0.8 Gd 0.2 ) 3
Al 5 O 12 : Ce (specific gravity 5.1), contained in an epoxy resin (specific gravity 1.2) as a light-transmitting mold member, and stirred. At this time, the viscosity of the epoxy resin is 700 cp. In this state, the phosphor and the light diffusing agent are mixed so as to be substantially uniformly dispersed in the resin to be the light-transmitting mold member.
【0032】あらかじめ発光素子とリード電極とを電気
的に接続し固定させたパッケージのキャビティ内に光拡
散剤及び蛍光体が混合攪拌されたエポキシ樹脂を滴下さ
せる。この直後の発光装置の模式的断面図を図1(B)
に示す。これを85℃180分の一次硬化、140℃2
40分の二次硬化によって発光装置を形成させた。形成
された発光装置を発光観測面側から観測すると発光観測
面側が灰色の無彩色となっており外光が照射されてもコ
ントラスト比が低下することなく見栄えも優れたもので
あった。An epoxy resin in which a light diffusing agent and a phosphor are mixed and stirred is dropped into a cavity of a package in which a light emitting element and a lead electrode are electrically connected and fixed in advance. FIG. 1B is a schematic cross-sectional view of the light emitting device immediately after this.
Shown in This is first cured at 85 ° C. for 180 minutes, 140 ° C.
The light emitting device was formed by secondary curing for 40 minutes. When the formed light emitting device was observed from the light emission observation surface side, the light emission observation surface side was gray and achromatic, and even when external light was irradiated, the contrast ratio did not decrease and the appearance was excellent.
【0033】なお、形成された発光装置を分析させた結
果、図1(C)の断面のごとくキャビティ内部で発光素
子に近づくにつれて蛍光体の濃度が高くなると共に光拡
散剤は発光素子と対向する表面側で徐々に多くなってい
る。As a result of analyzing the formed light emitting device, as shown in the cross section of FIG. 1C, the concentration of the phosphor increases as the light emitting device is approached inside the cavity, and the light diffusing agent faces the light emitting device. It gradually increases on the front side.
【0034】本発明の発光装置は、光拡散剤を含有させ
ない場合と比較して蛍光体の使用量を少なくさせること
ができると共に混色性も優れている。 (実施態様例2) 蛍光体201としてY3Al5O12:
Ce、光拡散剤202としてポリカーボネート(比重
1.2)、透光性モールド部材103としてアクリル樹
脂(比重1.2)を用いて図2の模式的断面図に示す発
光装置を形成させることができる。この発光装置200
は上述の蛍光体201及び光拡散剤202を透光性モー
ルド部材となる材料中に混ぜた後、スクリーン印刷し
た。この状態で透光性モールド部材203となる材料を
硬化させ孔版(不示図)を外すことによって発光装置を
形成させることができる。実施態様例2の発光装置は、
実施態様例1と同様コントラスト比の高い発光装置とす
ることができる。なお、図2中の発光素子206はSi
C基板上に形成させた発光層がInGaNからなる青色
が発光可能なLEDチップであり、LEDチップ206
の各電極とリード電極205とをそれぞれ導電性ワイヤ
として金線207及びAgペースト208を用いて電気
的に接続させてある。なお、本発明においては、チップ
タイプLEDについて詳述したが、ランプタイプLED
にも適用できることはいうまでもない。(実施態様例
3) 同じ励起光源の可視発光スペクトルで異なる色が
発光可能な2種類の蛍光体を用いた以外は、実施態様例
2と同様にして発光装置を形成させた。2種類の蛍光体
は、粒径が7.3μmである(Y0.995Gd0.005)3A
l5O 12:Ce0.25と、Eu及びCrで付活された窒素
含有CaO-Al2O3-SiO2蛍光体を用いている。こ
の発光装置は、実施態様例2よりも高いコントラスト比
を得られる発光装置とすることができる。これは蛍光体
ボディーカラーである黄色と赤色が混ざるためと考えら
れる。なお、本実施態様例の発光装置は実施態様例2よ
りも演色性が高くピンクの顔料を混合させることによっ
て中間色も高輝度に発光させることができる。The light emitting device of the present invention contains a light diffusing agent.
Reduce the amount of phosphor used compared to the case without
And color mixing is excellent. (Embodiment 2) As the phosphor 201, YThreeAlFiveO12:
Ce, polycarbonate as the light diffusing agent 202 (specific gravity
1.2), an acrylic tree as the light-transmitting mold member 103
Using a fat (specific gravity 1.2), the light source shown in the schematic sectional view of FIG.
An optical device can be formed. This light emitting device 200
Converts the above-mentioned phosphor 201 and light diffusing agent 202 into a translucent mode.
After mixing in the material that will become the
Was. In this state, the material that becomes the translucent mold member 203 is
By curing and removing the stencil (not shown)
Can be formed. The light emitting device of the embodiment 2
A light emitting device having a high contrast ratio as in the first embodiment.
Can be Note that the light emitting element 206 in FIG.
Blue light emitting layer made of InGaN on C substrate
Are LED chips that can emit light, and the LED chip 206
Each electrode and the lead electrode 205 are connected to a conductive wire, respectively.
Using gold wire 207 and Ag paste 208
Are connected. In the present invention, the chip
Although the type LED has been described in detail, the lamp type LED
Needless to say, it can be applied to (Example of embodiment
3) Different colors in the visible emission spectrum of the same excitation light source
Embodiment example except that two kinds of phosphors capable of emitting light were used.
A light emitting device was formed in the same manner as in No. 2. Two types of phosphors
Has a particle size of 7.3 μm (Y0.995Gd0.005)ThreeA
lFiveO 12: Ce0.25And nitrogen activated by Eu and Cr
CaO-Al contentTwoOThree-SiOTwoA phosphor is used. This
Has a higher contrast ratio than that of the second embodiment.
Light emitting device can be obtained. This is a phosphor
It is thought that the body colors yellow and red are mixed
It is. The light emitting device of this embodiment is different from that of the embodiment 2.
By mixing pink pigments with high color rendering properties
Thus, the intermediate colors can also emit light with high luminance.
【0035】[0035]
【発明の効果】量産性よく、均一性の高い蛍光体を利用
した発光装置を形成させることができる。また、光拡散
剤含有の樹脂と蛍光体含有の樹脂を別々に形成させた場
合に比べ形成させた発光装置の均一性が高まる傾向にあ
る。これは順次形成する場合、樹脂粘度の経時変化など
による量のばらつきが本発明では全く生じないためと考
えられる。また、本発明は、蛍光体の使用量も減すこと
ができるという優れた特徴を持ったものである。As described above, it is possible to form a light emitting device using a phosphor with high mass productivity and high uniformity. Also, the uniformity of the light emitting device formed tends to be higher than when the light diffusing agent-containing resin and the phosphor-containing resin are separately formed. This is presumably because in the case of sequential formation, there is no variation in the amount due to a change with time of the resin viscosity or the like in the present invention. Further, the present invention has an excellent feature that the amount of phosphor used can be reduced.
【図1】 図1は本発明の模式的断面図を示す。FIG. 1 shows a schematic sectional view of the present invention.
【図2】 図2は別の本件発明の模式的断面図を示す。FIG. 2 shows another schematic sectional view of the present invention.
100、200…発光装置 101、201…蛍光体 102、201…光拡散剤 103、203…透光性モールド部材 104…キャビティ 105、205…リード電極 106、206…LEDチップ 107、207…導電性ワイヤー 108…硬化させた導電性ペースト 100, 200: Light-emitting device 101, 201: Phosphor 102, 201: Light diffusing agent 103, 203: Translucent mold member 104: Cavity 105, 205: Lead electrode 106, 206 ... LED chip 107, 207: Conductive wire 108 ... cured conductive paste
Claims (5)
半導体発光素子を被覆する透光性モールド部材と、該透
光性モールド部材に含有させた前記半導体発光素子から
の可視光を吸収して、その可視光よりも長波長の可視光
を発光する蛍光体及び光拡散剤とを有する発光装置であ
って、 前記蛍光体は、透光性モールド部材及び光拡散剤よりも
比重が大きいことを特徴とする発光装置。1. A semiconductor light emitting device that emits visible light, a light transmitting mold member that covers the semiconductor light emitting device, and a device that absorbs visible light from the semiconductor light emitting device contained in the light transmitting mold member. A light emitting device having a phosphor and a light diffusing agent that emit visible light having a wavelength longer than that of the visible light, wherein the phosphor has a specific gravity greater than that of the light transmitting mold member and the light diffusing agent. A light emitting device characterized by the above-mentioned.
μm以下である請求項1に記載の発光装置。2. The phosphor has a particle size of 1 μm to 100 μm.
The light emitting device according to claim 1, wherein the size is not more than μm.
・5/3Al2O3、Eu及び/又はCrで付活された窒
素含有CaO-Al2O3-SiO2から選択される1種の
である請求項1乃至請求項2に記載の発光装置。3. The phosphor according to claim 2 , wherein the phosphor is Y 2 O 3 activated with Ce.
3. The light emitting device according to claim 1, wherein the light emitting device is one selected from nitrogen-containing CaO—Al 2 O 3 —SiO 2 activated with 5/3 Al 2 O 3 , Eu and / or Cr. 4.
半導体発光素子を被覆する透光性モールド部材と、該透
光性モールド部材に含有された前記半導体発光素子から
の可視光を吸収してその可視光よりも長波長の可視光を
発光する蛍光体及び光拡散剤とを有する発光装置の形成
方法であって、 前記透光性モールド部材となる材料中に光拡散剤及び光
拡散剤よりも比重が大きい蛍光体を含有させる工程と、 半導体発光素子上に光拡散剤及び蛍光体が含有された透
光性モールド部材となる材料を被覆させる工程と、 前記透光性モールド部材となる材料の粘度を低下させた
後、硬化させる工程とを有する発光装置の形成方法。4. A semiconductor light emitting device that emits visible light, a light transmitting mold member that covers the semiconductor light emitting device, and a device that absorbs visible light from the semiconductor light emitting device contained in the light transmitting mold member. A method for forming a light-emitting device comprising a phosphor and a light-diffusing agent that emits visible light having a wavelength longer than that of visible light, wherein the light-diffusing agent and the light-diffusing agent are contained in the material to be the light-transmitting mold member A step of including a phosphor having a specific gravity greater than that of the light-transmissive mold member; and a step of coating the semiconductor light-emitting element with a light-transmissive mold member containing a light-diffusing agent and a phosphor. Curing the material after reducing the viscosity of the material.
半導体発光素子を被覆する透光性モールド部材と、該透
光性モールド部材に含有された前記半導体発光素子から
の可視光を吸収してその可視光よりも長波長の可視光を
発光する蛍光体及び光拡散剤とを有する発光装置の形成
方法であって、 前記透光性モールド部材となる材料中
に光拡散剤及び光拡散剤よりも比重が大きい蛍光体を含
有させる工程と、 半導体発光素子上に光拡散剤及び蛍
光体が含有された透光性モールド部材となる材料を被覆
させる工程と、 前記透光性モールド部材となる材料中の光拡散剤及び蛍
光体の分布状態を分離させる工程と、 前記透光性モールド部材となる材料を硬化させる工程と
を有する発光装置の形成方法。5. A semiconductor light emitting device that emits visible light, a light transmitting mold member that covers the semiconductor light emitting device, and a device that absorbs visible light from the semiconductor light emitting device contained in the light transmitting mold member. A method for forming a light-emitting device comprising a phosphor and a light-diffusing agent that emits visible light having a wavelength longer than that of visible light, wherein the light-diffusing agent and the light-diffusing agent are contained in the material to be the light-transmitting mold member A step of including a phosphor having a specific gravity greater than that of the light-transmissive mold member; and a step of coating the semiconductor light-emitting element with a light-transmissive mold member containing a light-diffusing agent and a phosphor. A method for forming a light emitting device, comprising: a step of separating a distribution state of a light diffusing agent and a phosphor in a material; and a step of curing a material to be the light-transmitting mold member.
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