JP2000187221A - Production of liquid crystal element and production apparatus thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve alignment processing speed, embody stable liquid crystal molecule alignment and obtain high productivity by forming a light reaction type alignment layer on one side of a substrate and subjecting the reaction type alignment layer to optical irradiation, while heating the layer, thereby imparting liquid crystal alignment controllability to the optical reaction type alignment layer. SOLUTION: A heating stage 18 forms a space part 30, bored in the lower side of a substrate 17 loading section. Hot wind 21 formed by a hot wind heater 19, disposed in the space part 30, is introduced into the space part from the inside wall surfaces on four sides, with which the substrate 17 provided with the alignment layer is heated. As a result, UV irradiation light 13 enters the inside of the bored space part 30, and therefore, the reflection at the rear surface of the substrate 17 is eliminated. A UV reaction type alignment layer is formed as the light reaction type alignment layer and is subjected to the irradiation with UV rays, while the layer is preferably heated to 45 to 75 deg.C. A polyimide type aligning agent, etc., may be used as the material of the UV reaction type alignment layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal element such as a liquid crystal display and an apparatus for manufacturing the same.

[0002]

2. Description of the Related Art In general, a liquid crystal element has liquid crystal molecules sealed in a gap between a pair of substrates made of glass or the like, and an alignment film formed on the inner surface of the substrate has a pretilt which is a contact angle between the liquid crystal molecules and the substrate. By performing orientation processing to set the angle,
The orientation of liquid crystal molecules is enhanced.

A display (liquid crystal display element) using such a liquid crystal has a cell structure 1 as schematically shown in FIGS. 5 and 6, for example. That is, an indium tin oxide (ITO) is formed on the inner surface of a transparent substrate 2a such as glass.
A laminated body 1A in which a transparent electrode layer 3a such as a conductive oxide in which tin is doped into indium) and a SiO obliquely deposited layer 4a that realizes a high-contrast good domain as a liquid crystal alignment film are sequentially laminated; On the inner surface of the substrate 2b, a transparent electrode layer 3b, for example, a SiO oblique deposition layer 4
and a laminated body 1B in which b are sequentially laminated are disposed so that, for example, SiO oblique deposition layers 4a and 4b which are liquid crystal alignment films face each other, and a granular spacer 5 for realizing a predetermined cell gap d is provided. A liquid crystal cell is formed by sandwiching the liquid crystal, the liquid crystal 6 is injected into the cell gap, and the periphery is sealed with an adhesive 7.

The above-mentioned liquid crystal alignment films 4a and 4b include:
For example, an oblique deposition film using SiO or the like, a rubbing film using polyimide or the like has been conventionally used. In particular, a rubbing film is practically and widely used as an alignment film of a liquid crystal display element because of its good productivity and easy area enlargement.

However, since the rubbing film is liable to generate dust during rubbing, which is likely to cause pixel defects, and generates dust and static electricity, an ultraviolet light alignment control technique has been studied as a liquid crystal molecule alignment control method which can replace the rubbing method. ing. According to this method, it is possible to induce liquid crystal molecule alignment without contacting the substrate.

Accordingly, contamination due to dusting during rubbing, in particular, it is possible to avoid electrostatic damage due to friction on a substrate on which a TFT (thin film transistor) element is mounted, thereby preventing a reduction in yield, and a liquid crystal alignment in a fine region. Since it can be easily performed, its practical application is expected.

[0007] This ultraviolet alignment control method is shown in FIG.
As shown in FIG. 7 (c), when the orientation directions of the liquid crystal molecules 7 are mixed (α _{1 in} the area A and α _{2 in} the area B) as shown in FIG. 7 (c), first, as shown in FIG. One substrate 25a
A mask 28a is formed on the surface of the alignment film 26a formed thereon.
Set the pretilt angle of alpha ₁ in the alignment film 26a in the region A polarized ultraviolet rays 29a and obliquely irradiated with, then 7
As shown in (b), the pre-tilt angle of α ₂ is set on the alignment film 2 in the region B by obliquely irradiating polarized ultraviolet rays 29b using the mask 28b.

Next, as shown in FIG. 7 (c), the other substrate 25b in which two types of pretilt angles (α ₁ and α ₂ ) are set in the alignment film 26b in the same manner as described above, By injecting liquid crystal at a predetermined gap to the liquid crystal molecules 25a, liquid crystal molecules are set to the pretilt angles α ₁ , α ₁ ,
it is possible to obtain a liquid crystal panel oriented according alpha _2.

[0009]

However, as described above, it is possible to manufacture a divided alignment panel in which a plurality of types of alignment directions are mixed, but an alignment treatment by irradiating ultraviolet light to realize good alignment of liquid crystal molecules. The time is very long,
For this reason, the throughput of the ultraviolet irradiation device when manufacturing the display is deteriorated, which has been a great barrier to mass production.

It is an object of the present invention to provide a method of manufacturing a liquid crystal element with high productivity while improving the alignment processing speed of an alignment film and realizing stable liquid crystal molecular alignment, and an apparatus for manufacturing the same.

[0011]

That is, according to the present invention, a pair of substrates in which an electrode and an alignment film are laminated in this order are arranged facing each other with a predetermined gap on the side of the alignment film, and In producing the liquid crystal element disposed in the gap, a photo-reactive alignment film is formed on at least one of the substrates, and the photo-reactive alignment film is irradiated with light while being heated. The present invention relates to a method for producing a liquid crystal element having liquid crystal alignment control ability (hereinafter, referred to as a production method of the present invention).

According to the manufacturing method of the present invention, while the photo-reactive alignment film formed on the substrate is heated, the alignment film is irradiated with light to impart liquid crystal alignment control capability to the alignment film. Thus, the molecules of the alignment film at the time of light irradiation can be easily moved, and the alignment film molecules can be easily aligned in an arbitrary direction, so that the alignment film can be provided with the ability to control the liquid crystal alignment. As a result, the alignment processing speed for obtaining a desired alignment direction is improved, and stable alignment of liquid crystal molecules of the liquid crystal is enabled, so that a method of manufacturing a liquid crystal element with high productivity can be provided.

Further, the present invention relates to an apparatus for manufacturing a liquid crystal element in which a pair of substrates in which an electrode and an alignment film are laminated in this order are arranged facing each other with a predetermined gap therebetween, and a liquid crystal is arranged in the gap. An apparatus for manufacturing a liquid crystal device, comprising: a light irradiating unit for irradiating light to a photoreactive alignment film formed on the substrate; and a heating unit for heating the photoreactive alignment film during the light irradiation. (Hereinafter, referred to as a manufacturing apparatus of the present invention).

According to the manufacturing apparatus of the present invention, since the light irradiating means for irradiating the photoreactive type alignment film and the heating means for heating the alignment film are provided, the above manufacturing method can be easily performed. An apparatus for manufacturing a liquid crystal element can be provided.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

In the manufacturing method and apparatus according to the present invention, as shown in FIGS. 2 and 3, the substrate 17 is placed on a heating stage 18 and the substrate on which the photoreactive alignment film is formed is heated. Meanwhile, as shown in FIG. 1 (the heating stage 18 is not shown), it is desirable to irradiate light on the surface on which the photoreactive alignment film is formed.

In this case, as shown in FIGS. 2 and 3, the heating is performed by warm air using a gas as a medium, and air or an inert gas is used as a heating medium. It is desirable to blow hot air. As shown in FIGS. 2 and 3, for example, the heating stage 18 is hollowed out below the mounting portion of the substrate 17 to form a space portion 30. The space portion 30 is provided inside the space portion from four inner wall surfaces. Warm air 21 is introduced by a heated hot air heater (not shown) 19, whereby the substrate 17 provided with the alignment film 17 a is provided.
Is configured to be heated. Thus, the ultraviolet irradiation light 13 shown in FIG. 1 enters the hollow space 30, so that reflection on the back surface of the substrate can be eliminated.

As the heat source for heating used in the present invention, the above-mentioned hot air is suitable. In addition to these, there are heat ray irradiation means such as an infrared lamp and a halogen lamp, and resistance heating means using ITO. In the case of the resistance heating means, it may be provided in contact with the side of the substrate on which the alignment film is not formed. in this case,
Since ITO is transparent and has a large refractive index, it is possible to prevent the irradiated ultraviolet light from being reflected on the back surface of the substrate. Therefore, it is desirable to provide a space or a non-light reflecting surface on the side of the substrate on which the alignment film is not formed.

Also, it is desirable to form an ultraviolet-reactive alignment film as the photoreactive-type alignment film and to irradiate the ultraviolet light while heating the film to 40 ° C. or more and 85 ° C. or less, more preferably 45 ° C. to 75 ° C. As a material for the ultraviolet-reactive alignment film, a known polyimide-type photoalignment agent or the like can be used, but the orientation is exhibited by irradiation with ultraviolet light,
What is necessary is just to have the characteristic which expresses a pretilt angle.

In this case, as shown in FIG. 1, for example, ultraviolet light 13 emitted from a lamp unit 11 as an ultraviolet light source is passed through a polarizing unit 15 to further reduce the wavelength (for example, 3).
After the ultraviolet light (less than 00 nm) is removed by the glass plate 16, polarized ultraviolet light 13 is irradiated on the surface of the ultraviolet-sensitive alignment film formed on the substrate. As a light source, a laser beam or the like can be used in addition to an ultraviolet lamp.

After the irradiation with ultraviolet light under heating as described above, it is preferable to change the relative position of the substrate with respect to the light source and perform the light irradiation again under the heating. The relative position can be changed by rotating the angle. In FIG. 1, the orientation direction 22 of the orientation film of the substrate 17 is shown orthogonal to the polarization axis 14 of the ultraviolet light 13, but this orientation can be arbitrarily displaced by performing the above-mentioned light irradiation again. is there.

According to the above-described embodiment, for example, the base having a diagonal length of 0.55 inches or more is used.
High temperature growth with a number of pixels of 30,000 dots or more (growth temperature 6
(200-650 ° C.) Polysilicon thin film transistor type or a low-temperature grown (growth temperature of 400-450 ° C.) poly, using the above-described substrate having a diagonal length of 2.5 inches or more and having a pixel number of 180,000 dots or more. It becomes possible to configure a silicon thin film transistor type.

[0023]

Hereinafter, embodiments of the present invention will be described in detail.
It goes without saying that the present invention is not limited to the following embodiments.

<Embodiment 1> First, the manufacturing apparatus used in this embodiment will be described with reference to FIGS.

As shown schematically in FIG. 1, the manufacturing apparatus includes an ultraviolet lamp (not shown) disposed below a lamp unit 11, a light valve 12 for adjusting the irradiation position, and a polarizing unit further below the lamp. 15, a glass plate 16 for cutting low-wavelength light is disposed below the glass plate,
It is configured to irradiate the substrate 17 disposed at the irradiation position.

By operating the light valve 12, the reflecting mirror 11a of the lamp unit 11 is irradiated with ultraviolet light from an ultraviolet lamp, and the reflected light 13 can be irradiated at a predetermined angle at a predetermined ultraviolet intensity. The irradiation unit 13 adjusts the polarization axis of the ultraviolet light 13 by the polarization unit 15, and further transmits the ultraviolet light having a low wavelength of 300 nm or less to the glass plate 16.
Can be removed.

The substrate 17 in FIG. 1 is mounted on a heating stage 18 shown in FIGS. 2 and 3, but this heating device is not shown in FIG.

That is, as shown in FIG. 2, the heating stage 18 is provided with a warm air heater 19 (not shown) using a resistance heating source on the inner wall of a rectangular housing larger than the substrate 17 size. The structure is such that wind (heated air) 21 blows out from slit-shaped outlets 20 provided on the inner wall surfaces on all sides. Therefore, FIG. 3 (cross-sectional view taken along the line III-III in FIG. 2)
As shown in (2), the surface on which the alignment film is not formed of the substrate 17 placed at a predetermined position on the heating stage 18 is heated.

The diagonal length is set to 5.
The following process was performed on a 6-inch glass substrate to form a low-temperature-grown polycrystalline silicon transistor. The number of dots is VGA (Video Graphics Array)
y) Corresponding full color 921,600 dots. A glass substrate having a transparent electrode coated on a color filter was used as the substrate on the opposite side.

A polyimide type photo-alignment agent is applied to each of the above substrates by a known method on the surface of the substrate 17 on which a TFT (not shown) is formed, and then temporarily dried at 80 ° C. for 30 minutes and baked at 190 ° C. for 60 minutes. Was. Thereafter, as shown in FIG.
4 is irradiated with P-polarized ultraviolet light 13 from a position at an elevation angle of 80 ° as a first stage irradiation.
As shown in (b), as the second stage irradiation, the substrate 17 was rotated by 90 ° and the P-polarized ultraviolet light 13 was irradiated from an elevation angle of 80 °.

By the irradiation of the first stage, a schematic diagram of FIG.
As shown in (a), the liquid crystal molecules 23 formed by the alignment film 17a are formed.
Are arranged orthogonal to the polarization axis P at a predetermined pretilt angle. Further, by rotating the substrate by 90 degrees and performing the second stage irradiation, as shown in FIG. 4B, the liquid crystal molecules 23 in the alignment direction by the first stage irradiation indicated by the broken line are changed from the broken line to the solid line. The orientation direction changes at the pretilt angle shown by.

Such alignment processing is performed under heating by the heating stage 18 shown in FIG. 2. The energy of the heating promotes the alignment of alignment film molecules by ultraviolet irradiation, that is, the alignment of liquid crystal molecules. Speed can be increased. Therefore, the desired alignment treatment can be performed only by the first-stage irradiation, and if the desired alignment cannot be obtained by the first-stage irradiation, the aligned alignment is changed by the second-stage irradiation. It can be changed to a desired direction. The liquid crystal alignment direction can be arbitrarily controlled by adjusting the irradiation energy value and the ratio of the first-step irradiation to the second-step irradiation of the degree of polarization described below. In addition, when trying to realize different orientation directions in place, compared with the method shown in FIG. 7, if a mask having a predetermined pattern is used at the second stage irradiation, for example, without polarizing the optical system for ultraviolet irradiation at all, Since the mask is good, it is not necessary to use the mask a plurality of times, and it can be easily performed.

Then, the same polarized ultraviolet irradiation as described above was applied to the opposing substrate. However, in order to make the orientation directions of the liquid crystal molecules orthogonal, the polarization directions were adjusted to be orthogonal on both substrates. This is especially true for twisted nematic (T
N) It is advantageous when a liquid crystal is used, but the alignment directions on both substrates may be variously changed, such as antiparallel.

For the polyimide type photo-alignment film of this embodiment, a polyamic acid-based polymer material disclosed in US Pat. No. 5,731,405 was used. The UV lamp shown in FIG. 1 is a commercially available electrodeless UV lamp manufactured by Fusion (""
Using H "Bulp", the glass substrate 16 was cut by 300 mm or less using the glass plate 16. The heating temperature of the substrate by the heating stage shown in FIG.

The energy values of the first irradiation and the second irradiation shown in FIG. 4 were set to 5: 1, a polarizer was arranged on the front surface of the lamp, and the degree of polarization was set to about 10: 1. As a result of the measurement, the ultraviolet intensity on the substrate was 100 ± 10 mW / cm ² , and the energy of ultraviolet light irradiation for obtaining good liquid crystal molecular alignment was 28 J / cm ² .

The pair of substrates subjected to the photo-alignment treatment is then rotated by 90 °, the two substrates are bonded together at a gap of 3.5 μm, and then liquid crystal is injected to form a TN liquid crystal cell.
The polarizing plate arrangement was such that the polarization axis was parallel to the alignment axis, and was a normally white arrangement.

<Example 2> In this example, ultraviolet rays were irradiated by the same irradiation method as in Example 1 described above, and the alignment-treated substrate was heated during the irradiation of ultraviolet rays in the same manner as in Example 1. However, when a liquid crystal panel was prototyped using N ₂ gas as warm air as a heating medium, in order to obtain good alignment characteristics,
Ultraviolet irradiation energy of 20 J / cm ² was required.

<Comparative Example 1> For comparison with each of the above-described examples, a liquid crystal panel was prototyped by irradiating with ultraviolet rays in the same manner as in Example 1 and without performing heat treatment on the substrate. In order to obtain good alignment characteristics, an ultraviolet irradiation energy amount of 60 J / cm ^{2 was} required.

The required energy of each of the above Examples and Comparative Examples is shown in the following table.

As is clear from Table 1 above, in Example 1 in which heating was performed using warm air using air as the medium, the accumulated light amount and the irradiation time were almost 1 in comparison with Comparative Example 1 in which heating was not performed.
/ 2, Example 2 of heating with warm air using nitrogen gas as medium
Is approximately one-third of that of Comparative Example 1, the orientation of the pretilt angle is promoted by heating the substrate at the time of the alignment treatment of the alignment film by the irradiation of ultraviolet rays, and the alignment treatment can be performed by irradiating a small amount of ultraviolet irradiation energy for a short time. It turns out that is possible. And it can be proved that nitrogen gas is more effective as a medium for warm air because it is less likely to release heat than air.

According to each of the embodiments described above, when the ultraviolet-sensitive alignment film is irradiated with the ultraviolet light while irradiating the substrate while heating the substrate, the alignment film is processed so that the liquid crystal molecules are aligned at a desired pretilt angle. Can be promoted. Further, the effect can be further enhanced by using nitrogen gas as the heating medium. Therefore, in addition to improving the pre-tilt angle orientation processing speed, if the desired pre-tilt angle and orientation direction cannot be obtained by the first stage irradiation, the substrate is rotated by a predetermined angle to perform the second stage irradiation. And the desired alignment process can be performed by adjusting the energy value or the ratio of the degree of polarization between the first stage and the second stage, so that the throughput can be improved.

Moreover, even in a liquid crystal element constituting a high-temperature or low-temperature-grown polysilicon thin film transistor having high-density pixels formed on a substrate having a predetermined area, stable alignment of liquid crystal molecules can be obtained and high performance can be obtained. A liquid crystal element can be manufactured.

The above-described embodiment can be variously modified based on the technical idea of the present invention.

For example, the irradiation shown in FIG. 4 is performed by partially masking and selectively irradiating at the first or second stage irradiation, and changing the masking and irradiation angle to change the plurality of types of pretilt angles on the alignment film. It is also possible to form Also, the first
Orientation treatment may be performed in one direction only by step irradiation. Further, the material of the alignment film and the type of the liquid crystal molecules to be used can be variously selected.

[0045]

As described above, according to the present invention, a pair of substrates in which an electrode and an alignment film are laminated in this order are arranged facing each other with a predetermined gap on the alignment film side, and the liquid crystal is disposed in the gap. When manufacturing a liquid crystal element disposed in the photo-reactive alignment film, a light-reactive alignment film is formed on at least one of the substrates, and the photo-reactive alignment film is irradiated with light while being heated. Since the orientation control ability is provided, it is possible to promote the provision of the liquid crystal orientation control ability of the alignment film by heating,
As a result, the speed of aligning the photoreactive liquid crystal alignment in a desired direction is improved, and stable liquid crystal molecule alignment of the liquid crystal becomes possible, and productivity can be increased.

[Brief description of the drawings]

FIG. 1 is a schematic view of a liquid crystal manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic perspective view of a heating stage in the manufacturing apparatus.

FIG. 3 is a schematic sectional view taken along line III-III of FIG. 2;

FIG. 4 shows an ultraviolet irradiation method by the manufacturing apparatus,
(A) is a schematic diagram which shows a 1st stage irradiation, (b) is a schematic diagram which shows a 2nd stage irradiation.

FIG. 5 is a cross-sectional view illustrating an example of a liquid crystal element.

FIG. 6 is a plan view illustrating an example of a liquid crystal element.

FIGS. 7A and 7B are schematic diagrams of an alignment process of ultraviolet irradiation according to a conventional example, and FIG. 7A shows selective irradiation in one direction by masking;
(B) is selective irradiation in other directions by applying another mask,
(C) is a diagram showing an arrangement of liquid crystal molecules.

[Explanation of symbols]

11: lamp unit, 12: light valve, 13: irradiation light, 14, P: polarization axis, 15: polarization unit, 16 ...
Glass plate, 17: substrate, 17a: UV-reactive alignment film, 18: heating stage, 19: warm air heater, 20 ...
Outlet, 21 ... hot air, 22 ... alignment direction, 23 ... liquid crystal molecules, 30 ... space, alpha _1, alpha ₂ ... pretilt angle

Claims (22)

[Claims] 1. A liquid crystal device comprising: a pair of substrates in which an electrode and an alignment film are laminated in this order; a pair of substrates arranged opposite to each other at a predetermined gap on the side of the alignment film; and a liquid crystal disposed in the gap. At the time of manufacture, a liquid crystal element that forms a photoreactive alignment film on at least one of the substrates, irradiates the photoreactive alignment film with light while heating, and imparts a liquid crystal alignment control capability to the photoreactive alignment film. Manufacturing method. 2. The method according to claim 1, wherein the light irradiation is performed while heating the substrate on which the photoreactive alignment film is formed. 3. The method for manufacturing a liquid crystal device according to claim 1, wherein the heating is performed by hot air using a gas as a medium. 4. The method according to claim 3, wherein air or an inert gas is used as the heating medium. 5. The method for manufacturing a liquid crystal element according to claim 3, wherein the hot air is blown onto the surface of the base on which the alignment film is not formed during the heating. 6. The method for manufacturing a liquid crystal device according to claim 1, wherein a space or a non-light-reflecting surface is provided on the side of the substrate on which the alignment film is not formed. 7. The method for manufacturing a liquid crystal device according to claim 1, wherein an ultraviolet-ray-reactive alignment film is formed as the light-reactive-type alignment film, and ultraviolet irradiation is performed while heating the film to 40 ° C. or more and 85 ° C. or less. . 8. The method for manufacturing a liquid crystal element according to claim 7, wherein the ultraviolet light from the ultraviolet light source is passed through a polarizing plate and irradiated with polarized ultraviolet light. 9. The liquid crystal device according to claim 1, wherein after performing the light irradiation under the heating, the relative position of the base with respect to the light source is changed, and the light irradiation is performed again under the heating. Method. 10. The method according to claim 9, wherein the relative position is changed by rotating the base by a predetermined angle. 11. A high-temperature-grown polysilicon thin film transistor having a pixel number of 113,000 dots or more, using the substrate having a diagonal length of 0.55 inches or more, or a diagonal length of 2.5 inches or more. 2. The method for manufacturing a liquid crystal element according to claim 1, wherein the substrate is configured as a low-temperature-grown polysilicon thin film transistor having 180,000 dots or more using the substrate having a size of 2 inches or more. 12. A liquid crystal device in which a pair of substrates in which an electrode and an alignment film are laminated in this order are arranged facing each other with a predetermined gap on the side of the alignment film, and a liquid crystal is arranged in the gap. In the manufacturing apparatus, a light irradiating unit that irradiates light to the photoreactive alignment film formed on the substrate and a heating unit that heats the photoreactive alignment film during the light irradiation are provided. , Liquid crystal element manufacturing equipment. 13. The apparatus for manufacturing a liquid crystal element according to claim 12, wherein the heating means heats the substrate on which the photoreactive alignment film is formed. 14. An apparatus for manufacturing a liquid crystal element according to claim 12, wherein said heating means supplies warm air using a gas as a medium. 15. The apparatus for manufacturing a liquid crystal device according to claim 14, wherein air or an inert gas is used as the additional medium. 16. The apparatus for manufacturing a liquid crystal element according to claim 14, wherein the warm air is blown onto the surface of the substrate on which the alignment film is not formed by the heating means. 17. The apparatus for manufacturing a liquid crystal element according to claim 12, wherein a space or a non-light reflecting surface is provided on the side of the substrate on which the alignment film is not formed. 18. The ultraviolet-sensitive alignment film as the light-reactive alignment film is heated to 40 ° C. or higher and 85 ° C. or less by the heating unit, and an ultraviolet irradiation optical system is used as the light irradiation unit. 13. The apparatus for manufacturing a liquid crystal element according to item 12. 19. The apparatus for manufacturing a liquid crystal device according to claim 12, wherein said ultraviolet irradiation means comprises an ultraviolet light source and a polarizing plate. 20. The apparatus for manufacturing a liquid crystal element according to claim 12, further comprising a position changing means for changing a relative position of said base with respect to a light source. 21. The liquid crystal device manufacturing apparatus according to claim 20, wherein the position changing means is configured to rotate the base by a predetermined angle. 22. A high-temperature-grown polysilicon thin film transistor type liquid crystal device having the base having a diagonal length of 0.55 inches or more and having a pixel number of 113,000 dots or more;
13. The apparatus for manufacturing a liquid crystal element according to claim 12, wherein the low-temperature grown polysilicon thin film transistor type liquid crystal element having the base having a diagonal length of 2.5 inches or more and having a number of pixels of 180,000 dots or more is manufactured. .