JP2000021305A - Manufacture of image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image display device having a high display quality and a sufficient atmospheric pressure resistant structure by adhering/fixing an electrode plate at a prescribed distance to an electron source board after forming a carrier on the electron source board. SOLUTION: After forming element electrodes 002, 003 on an excellently cleaned board 001 by a photolithography method, Y directional wiring 73, an insulating film 11 and X directional wiring 72 are formed in a matrix shape, the wiring 72, 73 are formed by using a thick film printing method, and the insulating film 11 is desirably formed in a multilayer shape. Next, a conductive thin film 004 is formed by photolithography, and an electron source base board 71 is completed. A carrier 13 is formed on the X directional wiring 72 of this electron source board 71 by a screen printing method by using insulating paste, and an adhesive 22 is applied to and filled in the carrier 13-unformed part. Next, the electrode part 14 having the electron passing opening part 19 is placed on the carrier 13 to be positioned with the electron source board 71, and is adhered by uniformly applying pressure over the whole surface of an electrode plate to be fixed at a prescribed distance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device using an electron-emitting device, and more particularly to a method for accurately manufacturing an image display device having a plate-like electrode plate in the image device.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices using a hot cathode electron-emitting device and a cold cathode electron-emitting device are known. Among them, cold-cathode electron-emitting devices include surface-conduction electron-emitting devices and field-emission electron-emitting devices (hereinafter referred to as “FE-type”), and metal / insulating layer / metal-type electron-emitting devices (hereinafter “MIM-type”). ").) And the like. As an example of the surface conduction electron-emitting device type, see,
I. Elinson, Radio Eng. Elect
ron Phys. , 10, 1290 (1965), and other examples described later. The surface conduction electron-emitting device emits electrons when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. Examples of the surface conduction electron-emitting device include a device using an SnO2 thin film by Elinson et al. And a device using an Au thin film [G. Dittmer: ThinSolid Film
s, 9, 317 (1972)], In2O3 / SnO2
By a thin film [M. Hartwell and C.M.
G. FIG. Fonstad: IEEE Trans. ED C
onf. , 519 (1975)], and a method using a carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, p. 22, p. 22 (1983)] and the like have been reported. As a typical example of these surface conduction electron-emitting devices, the aforementioned M.I. FIG. 17 schematically shows the element configuration of the Hartwell. In the figure, 001 is a substrate. Reference numeral 004 denotes a conductive thin film, which is formed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern. The electron emitting portion 005 is formed by an energization process called energization forming described below. In the drawing, the element electrode interval L1 is set to 0.5 to 1 mm, and W 'is set to 0.1 mm. Conventionally, in these surface conduction electron-emitting devices, it has been general that the electron-emitting portion 005 is formed beforehand by performing an energization process called energization forming on the conductive thin film 004 before electron emission. That is, energization forming means applying a direct current voltage or a very slowly increasing voltage to both ends of the conductive thin film 004 and applying current to locally destroy, deform or alter the conductive thin film, thereby bringing the conductive thin film into an electrically high-resistance state. Is to form the electron emitting portion 005. In the electron emitting portion 005, a crack is generated in a part of the conductive thin film 004, and electrons are emitted from the vicinity of the crack. In the surface conduction type electron-emitting device subjected to the energization forming process, a voltage is applied to the conductive thin film 004 and a current is caused to flow through the device to cause the electron-emitting portion 005 to emit electrons.

[0003] As an example of the FE type, for example, W.M. P.
Dyke & W. W. Doran's Field Em
issue ", Advance in Electr
on Physics, 8, 89 (1956), or C.I. A. Spindt "Physical Prop
artists of thin-film field
Emission cathodes with m
olybdenium cones ", J. Appl.
Phys. , 47, 5248 (1976). As a typical example of the FE type device configuration, FIG. A. Spindt (US Pat. No. 3,453,478)
1 shows a cross-sectional view of an element according to the present invention. In the figure, reference numeral 601 denotes an electron source substrate; 602, an emitter wiring made of a conductive material;
05 is an emitter cone, 603 is an insulating layer, and 604 is a gate electrode. In this element, an appropriate voltage is applied between the emitter cone 605 and the gate electrode 604 to cause field emission from the tip of the emitter cone 605. FIG. 10 shows another element configuration of the FE type.
There is also an example in which the emitter and the gate electrode are arranged substantially in parallel with the substrate plane on the substrate instead of the laminated structure as described above.

As an example of the MIM type, for example, C.I.
A. Mead, “Operation of Tune
1-Emission Devices ", J. App.
l. Phys. , 32, 646 (1961). FIG. 11 shows a typical example of the MIM type element configuration. FIG. 11 is a cross-sectional view. In FIG. 11, reference numeral 701 denotes an electron source substrate; 702, a lower electrode made of a metal; 703, a thin insulating layer having a thickness of about 100 angstroms; 704, a metal having a thickness of about 80 to 300 angstroms. Upper electrode. In the MIM type, electrons are emitted from the surface of the upper electrode 704 by applying an appropriate voltage between the upper electrode 704 and the lower electrode 702.

[0005] The above-mentioned cold cathode electron-emitting device does not require a heating heater because it can obtain electrons at a lower temperature than a hot cathode electron-emitting device. Therefore, the structure is simpler than that of the hot cathode electron-emitting device, and a fine device can be manufactured. Further, even if a large number of elements are arranged on the substrate at a high density, problems such as thermal melting of the electron source substrate hardly occur. In addition, unlike the hot cathode electron emitting device, which operates by heating the heater, the response speed is slow. In contrast, the cold cathode electron emitting device has an advantage that the response speed is fast.

For this reason, research for applying the cold cathode electron-emitting device has been actively conducted. For example, the surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because the structure is particularly simple and the manufacturing is easy among the cold cathode electron-emitting devices.

For applications of the surface conduction electron-emitting device, for example, image display devices such as image display devices and image recording devices, and charged beam sources have been studied. In particular, as an application to an image display device, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light upon irradiation with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it is a self-luminous type and does not require a backlight and has a wide viewing angle.

Further, as an example in which the FE type is applied to an image display device, for example, R.F. The flat panel display reported by Meyer et al. Is known [R. Meyer "Rec
ent Development on Microt
ips Display at LETI ", Tec
h. Digest of 4th Int. Vacuu
m Microelectronics Conf. ,
Nagahama, pp. 6 to 9 (1991)] Therefore, a multi-electron source in which a plurality of electron-emitting devices are wired has various applications. For example, if an electric signal corresponding to image information is appropriately applied, an electron source for an image display device is used. Can be suitably used.

In the above-mentioned image display apparatus using an electron source, an image forming apparatus such as an envelope for maintaining a vacuum atmosphere, an electron source for emitting electrons and its driving circuit, and a phosphor emitting light by collision of electrons. A member, an accelerating electrode for accelerating electrons toward the image forming member, and a high voltage power supply are required. In some cases, a support column (spacer) is used as an atmospheric pressure resistant structure of the flat panel display.

However, when gas or the like remains in the vacuum atmosphere, the residual gas or the like is ionized during use, and the positive ions fly toward the electron source by the accelerating electrode and collide with the electron-emitting device. May be degraded. In order to prevent the charged particles such as the positive ions from directly colliding with the electron-emitting device, the substrate is separated from the substrate on which the electron-emitting device is formed by a predetermined distance with an insulating support to cover the electron-emitting portion of the electron-emitting device. Like, to protect the electron source by arranging an electrode plate having an electron passage hole,
In some cases, the life of an electron source is extended (Japanese Patent Application Laid-Open No. 52-1).
21454 or JP-A-7-235257).

[0011]

However, if the electrode plate is bent or undulated, the electric field distribution becomes non-uniform and the trajectory of the electrons emitted from the electron-emitting device changes. In this case, it is necessary to eliminate bending, undulation, and the like at the time of bonding, and to perform the processing with high accuracy in both height and position. When a support column (spacer) having an atmospheric pressure resistant structure as described above is required, the spacer may be fixed on an electrode plate mounted on an insulating support. The electrode plate is required to be fixed with high precision and high rigidity without a change in shape, based on an insulating support. However, in the conventional manufacturing method, the support is formed with an adhesive, and the support and the fixing from the electron source substrate are performed at the same time. Therefore, the problem that the electrode plate is not accurately positioned and fixed due to uneven thickness of the adhesive. was there.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has high display quality by performing uniform and high-precision fixing without unevenness between the electron source substrate and the electrode plate. It is another object of the present invention to provide a method of manufacturing an image display device having a sufficient atmospheric pressure resistant structure by firmly fixing a spacer.

[0013]

That is, the present invention is directed to an electron source substrate having an electron-emitting device formed thereon, and an electron beam emitted from the electron-emitting device which is disposed to face the electron source substrate. A face plate substrate on which an image forming member on which an image is formed is formed, a support frame around the electron source substrate and the face plate substrate, and a support formed on the electron source substrate. An electrode plate supported at a predetermined distance from the electron source substrate, wherein after the support is formed, the electrode plate is adhered to the electron source substrate for a predetermined distance. To a method for manufacturing an image display device, wherein

Preferably, the electrode plate is made of a plate-shaped conductor having electron transmission holes, and the electron-emitting device is a surface conduction electron-emitting device.

In the present invention, the formation of the support and the fixing of the electrode plate are performed in separate steps. Then, unlike the case where the formation of the support and the fixing of the electrode plate are performed simultaneously with an adhesive (frit or the like), the support having a uniform height is formed first, and then the soft adhesive (frit glass or the like) is formed. The distance between the electrode plate and the substrate can be kept uniform since the support defines the distance from the substrate even when the substrate is used. For this reason, the influence on the electric field distribution due to the deflection or undulation of the electrode plate can be extremely reduced. Also, when a spacer is used, since the height of the electrode plate is uniform, the spacer can be fixed accurately and reliably, so that a sufficient atmospheric pressure resistant structure can be achieved.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing an example of the image display device of the present invention. Here, an example using a surface conduction electron-emitting device will be described.

In FIG. 1, reference numeral 001 denotes a substrate, and reference numerals 002 and 003 denote device electrodes, which are connected to X and Y-direction wirings to be described later. Reference numeral 004 denotes a thin film including an electron emitting portion, which is electrically connected to the device electrodes 002 and 003. Reference numeral 73 denotes a Y-direction wiring, and 72 denotes an X-direction wiring, which are insulated by 11 insulating films. Y direction wiring 73, X direction wiring 7
2. The thickness of the insulating film 11 is in the range of several μm to several tens μm. Reference numeral 14 denotes an electrode plate, which is an electron-emitting portion of the electron-emitting device;
That is, it is formed on the thin film including the electron emitting portion so as to cover the electron emitting portion. As this material, a metal material such as copper or nickel and an alloy are preferable, but a member having an insulator surface coated with a conductor can also be used.
The thickness of the electrode plate is usually several tens μm to several hundred μm. Reference numeral 19 denotes an electron opening, which has an opening through which electrons emitted from the electron emitting portion pass.

Regarding the shape and size of the opening, an optimum shape can be used in accordance with the form of the image display device, and not only a rectangle but also a form such as a circle, an ellipse, and a polygon can be used. Also, an optimal value of the size of the opening can be selected in consideration of the beam diameter of the electron beam emitted from the electron-emitting device.

Reference numeral 13 denotes a support. The height of the support (distance from the electron source substrate) can have an optimal value according to the form of the image display device. Preferably several tens μm
~ Several hundred μm. The material of the support is not particularly limited as long as the support does not collapse or deform when the electrode plate is fixed in a later step. For example, after applying an insulating paste by screen printing or the like, firing is performed. Can be formed. Further, since the support is disposed near the electron-emitting device, the support may have a desired conductivity so as not to be charged up by emitted electrons or the like.

Reference numeral 22 denotes an adhesive for fixing the electrode plate 14 and the support 13. The adhesive is selected in consideration of the adhesive strength, heat resistance, operating temperature, degassing property, coating method and the like, and frit glass is mainly used. When a fusible adhesive such as glass frit is used, it is preferable to use one that is lower than the softening temperature of the support.

Referring to FIG. 2, a method for manufacturing the image display device of the present invention will be described in detail. First, a device electrode including the device electrodes 002 and 003 is formed on a well-cleaned substrate 001 by photolithography, printing, or the like. This electrode is provided to improve the electrical contact between the conductive thin film described later and the wiring. Usually, the thin film including the electron-emitting portion is a film that is extremely thin as compared with the conductor layer for wiring, and is provided to avoid problems such as wettability and step-retention. Therefore, when the conductor layer for wiring is formed of a thin film by a sputtering method or the like,
The device electrodes need not always be formed individually, but can be formed simultaneously with the wiring conductors. Examples of the method of forming the electrode include a method using a vacuum system such as a vacuum deposition method, a sputtering method, and a plasma CVD method, and a thick film printing method in which a thick film paste in which a metal component and a glass component are mixed in a vehicle is printed and fired. There is a law.

Next, the Y-direction wiring 73, the insulating film 11, and the X-direction wiring 72 are formed in a matrix. Since it is more advantageous to reduce the electric resistance of these wirings, it is preferable to use a thick film printing method which can form a thick film. Therefore, it is preferable to form the wiring by using a conductive paste by a screen printing method. At this time, each element electrode is connected to each wiring. Further, it is better to form the insulating film in multiple layers in order to improve the insulating property.

Next, a conductive thin film 004 is formed, and thereafter, if necessary, patterned by photolithography or the like to form the conductive thin film 004. (Figure 2
(A)). Next, using the electron source substrate 71 completed in this way, a support 13 is formed as shown in FIG. This support is preferably formed on the X-direction wiring so as not to hinder display. The pattern of this support formation is
It is sufficient that there is a portion directly in contact with the electrode plate to define the height from the electron source substrate, and the portion is not particularly limited.
It is preferable to leave a place where the adhesive is formed on the X-direction wiring as shown in FIG. The support can be formed by a screen printing method using an insulating paste or the like. In the case where high precision uniformity is required over the entire surface of the electron source substrate, a method may be employed in which the top of the support is polished after the support is formed to make the height uniform.

Next, the support 1 is placed on the X-direction wiring on the substrate.
An adhesive is applied and filled in portions where no 3 is formed (FIG. 2C). The application method is not particularly limited, such as a printing method and application using a dispenser, and it is sufficient that the adhesive can be applied and formed in a desired amount. The application of the adhesive does not need to be performed between all the supports, as long as the adhesive strength can be obtained. In particular, when frit glass is used as the adhesive, drying and calcination are sequentially performed after application in paste form. Preliminary firing is performed for firing a solvent and a binder when frit glass is used as a paste, and is usually performed at a temperature of 300 to 400 ° C.

Next, an electrode plate 1 having an electron passage opening formed on a support 13 by fine drilling by laser or etching, or by electroforming.
4, after the electron source substrate 71 and the electrode plate 14 are aligned, pressure is applied uniformly over the entire surface of the electrode plate to perform bonding (FIG. 2D). Although the processing at the time of bonding differs depending on the adhesive, for example, 400 to 50 when frit glass is used.
Baking at 0 ° C. is performed.

FIG. 3 shows a case where an electron source having an electrode plate formed on an electron source substrate is applied to an image display device as described above.
This will be described with reference to FIG. In the figure, 001 is a substrate, 005 is an electron-emitting portion, 13 is a support, and 14 is an electrode plate. 86 is a face plate, 84 is a phosphor, and 85 is a metal back. The image display device can be formed by arranging the electron source substrate and the face plate to face each other with the support frame 82 interposed therebetween and evacuating the inside. When the electron-emitting device is driven using a driving circuit (not shown), the electron-emitting portion 1
Electrons are emitted from 5 and reach the face plate through the electron openings to cause the phosphor to emit light, whereby an image can be displayed. A voltage of several kV is applied to the metal back to accelerate electrons. In addition, it is also possible to provide a function as a grid by applying a desired potential to the electrode plate of the present invention.

In the present invention, the electron-emitting device can be protected from positive ions by forming the electrode plate so as to particularly cover the electron-emitting portion. The basic configuration of the surface conduction electron-emitting device that can be used in the present invention is roughly classified into two types, a planar type and a vertical type. In the case of the planar surface conduction electron-emitting device, as shown in FIG. This is particularly preferable because the electrons draw a parabolic trajectory, and the electron emission portion can be effectively covered with the electrode plate.

First, the plane type surface conduction electron-emitting device will be described. 6A and 6B are schematic views showing the configuration of a planar surface conduction electron-emitting device. FIG. 6A is a plan view and FIG.
(B) is a sectional view. In FIG. 6, 001 is a substrate, 0
02 and 003 are device electrodes, 004 is a conductive thin film, 005
Denotes an electron emission portion. As the substrate 001, quartz glass, glass with a reduced impurity content such as Na, blue plate glass, a glass substrate on which SiO2 is deposited by a sputtering method or the like, a ceramic substrate such as alumina, or the like can be used. As a material of the opposing element electrodes 002 and 003, a general conductive material can be used.
Metals or alloys such as r, Au, Mo, W, Pt, Ti, Al, Cu, Pd and Pd, As, Ag, Au, RuO
2, a printed conductor composed of a metal such as Pd-Ag or a metal oxide and glass, a transparent conductor such as In2O3-SnO2, a semiconductor conductor material such as polysilicon, or the like. Device electrode interval L1, device electrode length W
2. The shape and the like of the conductive thin film 004 are designed in consideration of an applied form and the like. The device electrode interval L1 is preferably in the range of several thousand angstroms to several hundred micrometers, and more preferably in the range of one micrometer to 100 micrometers in consideration of the voltage applied between the device electrodes. The device electrode length W2 is in the range of several micrometers to several hundred micrometers in consideration of the resistance value of the electrode and the electron emission characteristics. Device electrode 002,
The thickness d of 003 ranges from 100 angstroms to 1 micrometer. In addition to the structure shown in FIG. 6, a structure in which a conductive thin film 004 and opposing element electrodes 002 and 003 are stacked in this order on the substrate 001 can be employed.

It is preferable to use a fine particle film composed of fine particles for the conductive thin film 004 in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage of the device electrodes 302 and 303, the resistance value between the device electrodes 002 and 003, forming conditions to be described later, and the like, but is usually in the range of several Å to several thousand Å. And more preferably 10
It is preferable that the thickness be in the range of 500 Å from Å. The resistance value of Rs is 102 to 107.
Is the value of Ω. Note that Rs is a value that appears when the resistance R of a thin film having a thickness t, a width w, and a length 1 is R = Rs (l / w). = Ρ
/ T. In the specification of the present application, the energization process will be described as an example of the forming process, but the forming process is not limited to this, and any method may be used as long as it forms a high resistance state by causing a crack in the film. Good.

The material forming the conductive thin film 004 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
metals such as r, Fe, Zn, Sn, Ta, W, Pd, Pd
Oxides such as O, SnO2, In2O3, PbO, Sb2O3, HfB2, ZrB2, LaB6, CeB6, YB
Borides such as 4, GdB4, TiC, ZrC, HfC, T
carbides such as aC, SiC, WC, TiN, ZrN, Hf
It is appropriately selected from nitrides such as N, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure in a state where the fine particles are individually dispersed and arranged or in a state where the fine particles are adjacent to each other or overlap each other (some fine particles are aggregated). And an island-like structure as a whole). The particle size of the microparticles ranges from a few Angstroms to 1 micrometer, preferably from 10 Angstroms to 200 Angstroms.

The electron-emitting portion 005 is constituted by a high-resistance crack formed in a part of the conductive thin film 004, and depends on the thickness, film quality, material, and method of energization forming and the like of the conductive thin film 004 described later. It will be. Electron emission unit 0
05 may contain conductive fine particles having a particle size of 1000 angstroms or less. The conductive fine particles contain some or all of the elements of the material constituting the conductive thin film 004. Electron emission unit 0
05 and the conductive thin film 004 in the vicinity thereof may contain carbon or a carbon compound.

Next, a vertical surface conduction electron-emitting device will be described. FIG. 5 is a schematic diagram showing an example of the vertical surface conduction electron-emitting device of the present invention.

In FIG. 5, the same parts as those shown in FIG. 6 are denoted by the same reference numerals as those shown in FIG. 21 is a step forming part. Substrate 001, device electrodes 002 and 003, conductive thin film 004, electron emitting section 00
5 can be made of the same material as in the case of the above-mentioned flat surface conduction electron-emitting device. Step forming part 21
Is S formed by vacuum deposition, printing, sputtering, etc.
It can be made of an insulating material such as iO2. The film thickness of the step forming portion 21 corresponds to the device electrode interval L1 of the flat surface conduction electron-emitting device described above, and can be in the range of several thousand angstroms to several tens of micrometers. This film thickness is set in consideration of the manufacturing method of the step forming portion, the voltage applied between the device electrodes, and the like, but is preferably in the range of several hundred angstroms to several micrometers.

The conductive thin film 004 is formed after the device electrodes 002 and 003 and the step forming portion 21 are formed.
003. Although the electron-emitting portion 005 is formed in the step forming portion 21 in FIG. 5, the shape and position are not limited to this depending on the forming conditions, forming conditions and the like.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, one example of which is schematically shown in FIG.

Hereinafter, an example of the manufacturing method will be described with reference to FIGS. In FIG. 7, the same parts as those shown in FIG. 6 are denoted by the same reference numerals as those shown in FIG. 1) The substrate 001 is sufficiently washed with a detergent, pure water, an organic solvent, or the like, and a device electrode material is deposited by a vacuum evaporation method, a sputtering method, or the like. , 003 (FIG. 7A). 2) An organic metal solution is applied to the substrate 001 provided with the device electrodes 002 and 003 to form an organic metal thin film. As the organic metal solution, a solution of an organic metal compound containing the metal of the material of the conductive thin film 004 as a main element can be used. The organic metal thin film is heated and baked, and is patterned by lift-off, etching, or the like to form a conductive thin film 004 (FIG. 7B). Here, the method of applying the organometallic solution has been described, but the method of forming the conductive thin film 004 is not limited to this, and a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, A dipping method, a spinner method, or the like can also be used. 3) Subsequently, a forming process is performed. As an example of the forming processing method, a method by an energization processing will be described. When a current is applied between the device electrodes 002 and 003 using a power supply (not shown), an electron-emitting portion 005 having a changed structure is formed at the portion of the conductive thin film 004.
(C)). According to the energization forming, the conductive thin film 004
Locally, a site having a structural change such as destruction, deformation or alteration is locally formed. The portion becomes the electron emitting portion 005. FIG. 8 shows an example of the voltage waveform of the energization forming.

The voltage waveform is preferably a pulse waveform. For this purpose, there are a method shown in FIG. 8A for continuously applying a pulse having a pulse peak value at a constant voltage, and a method shown in FIG. 8B for applying a voltage pulse while increasing the pulse peak value.

In FIG. 8A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. Usually, T1 is set in the range of 1 microsecond to 10 milliseconds, and T2 is set in the range of 10 microseconds to 100 milliseconds. The peak value of the triangular wave (peak voltage at the time of energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under these conditions, for example,
The voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG. 8b can be similar to those shown in FIG. 8a. The peak value of the triangular wave (peak voltage during energization forming) is, for example, 0.1
It can be increased by about V steps. The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive thin film during the pulse interval T2, and measuring the current. For example, the element current flowing when a voltage of about 0.1 V is applied is measured, and the resistance value is calculated. When the resistance indicates 1 M ohm or more, the energization forming is terminated.

4) It is preferable to perform an activation process on the element after the forming. By performing the activation process, the device current If and the emission current Ie change significantly. The activation treatment can be performed, for example, by repeating the application of a pulse in an atmosphere containing a gas of an organic substance, similarly to the energization forming. This atmosphere can be formed using an organic gas remaining in the atmosphere when the inside of the vacuum vessel is evacuated using, for example, an oil diffusion pump or a rotary pump, or is sufficiently evacuated once by an ion pump or the like. It can also be obtained by introducing a gas of an appropriate organic substance into a vacuum. The preferable gas pressure of the organic substance at this time varies depending on the above-described application form, the shape of the vacuum vessel, the type of the organic substance, and the like, and is appropriately set according to the case. Suitable organic substances include alkane, alkene, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids, and organic acids such as sulfonic acids. And specific examples thereof include C such as methane, ethane, and propane.
saturated hydrocarbons represented by nH2n + 2, unsaturated hydrocarbons represented by a composition formula such as ethylene, propylene and the like CnH2n, benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, Formic acid, acetic acid, propionic acid and the like can be used. As a result of the treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie are significantly changed. The end of the activation step is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse crest value, and the like are set as appropriate.

The carbon or carbon compound is HOPG
(Highly Oriented Pyrolytic Graphite), PG (Pyrol
graphite such as ytic Graphite) and GC (Glassy Carbon) (HOPG is graphite having a substantially complete crystal structure, PG is graphite having a crystal grain of about 200 angstroms and the crystal structure is slightly disordered, and GC is a graphite having a crystal grain of 20 or less. An amorphous carbon (a carbon containing amorphous carbon and a mixture of amorphous carbon and the above-mentioned graphite microcrystals).
The thickness is preferably 500 Å or less, and more preferably 300 Å or less.

5) The electron-emitting device obtained through the activation step is preferably subjected to a stabilization treatment. This treatment is preferably performed at a partial pressure of the organic substance in the vacuum vessel of 1 × 10 −8 torr or less, preferably 1 × 10 −10 torr or less. The pressure in the vacuum vessel is 10-6.5 to 10-7t
orr is preferable, and particularly preferably 1 × 10 −8 torr or less. The evacuation device that evacuates the vacuum container is designed so that the oil generated from the device does not affect the characteristics of the element.
It is preferable to use one that does not use oil. Specifically, a vacuum exhaust device such as a sorption pump and an ion pump can be used. Further, when the inside of the vacuum vessel is evacuated, it is preferable that the entire vacuum vessel is heated so that the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device are easily evacuated. The vacuum evacuation condition in the heated state at this time is desirably 5 hours or more at 80 to 200 ° C., but is not particularly limited to this condition.
It changes depending on various conditions such as the configuration of the electron-emitting device. In addition,
The partial pressure of the organic substance is measured by measuring the partial pressure of organic molecules having a mass number of 10 to 200 and mainly composed of carbon and hydrogen using a mass spectrometer, and integrating the partial pressures.

The atmosphere at the time of driving after the stabilization step is preferably the same as that at the end of the stabilization treatment, but is not limited to this. If the organic substance is sufficiently removed, Even if the degree of vacuum itself is slightly reduced, sufficiently stable characteristics can be maintained. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current I
e becomes stable. Various arrangements of the electron-emitting devices can be adopted. As an example, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, a large number of electron-emitting devices are arranged (referred to as a row direction), and the electrons are arranged in a direction perpendicular to the wiring (referred to as a column direction). A control electrode (also referred to as a grid; an electrode plate supported by the support of the present invention can be used as a control electrode) disposed above the emission element to control and drive electrons from the electron emission element in a ladder-like arrangement. There is something. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. Such is the so-called simple matrix arrangement.

First, the simple matrix arrangement will be described in detail below. An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 9, 71 is a substrate, 72 is an X-direction wiring, and 73 is a Y-direction wiring. 74 is a surface conduction electron-emitting device, and 75 is a connection. Note that the surface conduction electron-emitting device 74 may be of the above-described flat type or vertical type.

The m X-direction wirings 72 are Dx1, Dx
2, ... Dxm, vacuum deposition method, printing method,
It can be made of a conductive metal or the like formed by a sputtering method or the like. The material, thickness, and width of the wiring are appropriately designed. , Dy1, Dy2,..., D
It is composed of n yn wirings and is formed similarly to the X-directional wiring 72. An interlayer insulating layer (not shown) is provided between the m X-directional wirings 72 and the n Y-directional wirings 73 to electrically separate them (m and n are both positive. Integer).

The interlayer insulating layer (not shown) is made of SiO 2 or the like formed by using a vacuum deposition method, a printing method, a sputtering method, or the like. For example, the substrate is formed in a desired shape on the entire surface or a part of the substrate 71 on which the X-directional wiring 72 is formed, and the film thickness, the material, and the manufacturing method are set so as to withstand the potential difference at the intersection of the X-directional wiring 72 and the Y-directional wiring 73. Is set. X direction wiring 72
And the Y-direction wiring 73 are drawn out as external terminals.

A pair of electrodes (not shown) constituting the surface conduction electron-emitting device 74 are electrically connected to m X-directional wires 72 and n Y-directional wires 73 by a connection 75 made of a conductive metal or the like. Have been.

The material forming the wiring 72 and the wiring 73, the material forming the connection 75, and the material forming the pair of element electrodes may be partially or entirely the same or different. Good. These materials are appropriately selected, for example, from the above-described materials for the device electrodes. When the material forming the element electrode is the same as the wiring material, the wiring connected to the element electrode can also be called an element electrode.

A scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices 74 arranged in the X direction is connected to the X-direction wiring 72. On the other hand, a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices 74 arranged in the Y direction according to an input signal is connected to the Y-direction wiring 73. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between a scanning signal and a modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently using simple matrix wiring.

An image display device in which an electrode plate is attached to an electron source substrate on which an electron source having such a simple matrix arrangement is formed according to the present invention is shown in FIGS. 1, 3, 12, and 1.
3 and FIG. FIG. 12 is a schematic view showing an example of the display panel of the image display device. In this figure, the support and the electrode plate of FIGS. 1 and 2 are not shown in order to simplify the description of the image display device. FIG. 13 is a schematic diagram of a fluorescent film used in the image display device of FIG. FIG. 14 is a block diagram illustrating an example of a driving circuit for performing display in accordance with an NTSC television signal.

In FIG. 12, reference numeral 71 denotes an electron source substrate on which a plurality of electron-emitting devices are arranged; 81, a rear plate on which the electron source substrate 71 is fixed; 86, a fluorescent film 84 on the inner surface of a glass substrate 83;
And a face plate on which a metal back 85 is formed. Reference numeral 82 denotes a support frame to which a rear plate and a face plate are connected using frit glass or the like. Reference numeral 88 denotes an envelope which is fired and sealed in a temperature range of 400 to 500 ° C. for 10 minutes or more in the atmosphere or nitrogen, for example.

Reference numeral 74 corresponds to the electron-emitting portion in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 is composed of the face plate 86, the support frame 82, and the rear plate 81 as described above. Since the rear plate is provided mainly for the purpose of reinforcing the strength of the electron source substrate 71, if the electron source substrate itself has sufficient strength, a separate rear plate can be unnecessary. Therefore, the support frame is sealed directly to the electron source substrate,
The envelope may be constituted by the face plate, the support frame, and the electron source substrate. In addition, a spacer (atmospheric pressure resistant support member) may be provided between the face plate and the rear plate to form an envelope having sufficient strength against atmospheric pressure.

FIG. 13 is a schematic diagram showing a fluorescent film formed on the face plate of FIG. The fluorescent film 84 can be composed of only a phosphor in the case of monochrome. In the case of a color fluorescent film, it can be composed of a black member 91 called a black stripe or a black matrix and a fluorescent material 92 depending on the arrangement of the fluorescent materials. The purpose of providing the black stripes and the black matrix is to make the color separation between the phosphors 92 of the necessary three primary color phosphors black in color display to make color mixing less noticeable, and to provide contrast due to external light reflection. Is to suppress the decrease in the temperature.

As a method of applying a phosphor to the glass substrate 83 shown in FIG. 12, a precipitation method, a printing method, etc. can be adopted regardless of monochrome or color. On the inner surface side of the fluorescent film 84,
Usually, a metal back 85 is provided. The purpose of providing the metal back is to improve the brightness by mirror-reflecting light toward the inner surface side of the phosphor emission toward the face plate 86 side, to act as an electrode for applying an electron beam acceleration voltage, The purpose is to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like.

The face plate 86 may be provided with a transparent electrode outside the fluorescent film (on the glass substrate 83 side) in order to further enhance the conductivity of the fluorescent film 84.

When performing the above-mentioned sealing, in the case of color, it is necessary to make each color phosphor correspond to the electron-emitting device.
Sufficient alignment is essential.

The image display device shown in FIG. 12 is manufactured, for example, as follows. The envelope 88 is evacuated through an exhaust pipe (not shown) by an exhaust device that does not use oil, such as an ion pump and a sorption pump, while appropriately heating, as in the above-described stabilization step, and is 1 × 10 −7 torr.
After setting the atmosphere to a sufficiently low level of an organic substance having a degree of vacuum of about r, sealing is performed. In order to maintain a vacuum degree after the envelope 88 is sealed, a getter process may be performed. this is,
Immediately before or after sealing of the envelope 88, the envelope 8 is heated by resistance heating or high-frequency heating.
This is a process of heating a getter disposed at a predetermined position (not shown) in the step 8 to form a vapor deposition film. Getter is usually B
a is a main component, and maintains a vacuum degree of, for example, 1 × 10 −5 to 1 × 10 −7 torr by the adsorption action of the deposited film.

Next, an example of the configuration of a driving circuit for performing television display based on NTSC television signals on a display panel configured using electron sources in a simple matrix arrangement will be described with reference to FIG. . In FIG. 14, 101 is a display panel, 102 is a scanning circuit, 103 is a control circuit, and 104 is a shift register. 105 is a line memory, 106 is a synchronization signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 101 has terminals Dox1 to Dox1
oxm, terminals Doy1 to Doyn, and high voltage terminal Hv
Connected to an external electric circuit via Terminal Dox1
Scanning for sequentially driving electron sources provided in the display panel, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns, one row at a time (N elements). A signal is applied.

To the terminals Doy1 to Doyn, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting device in one row selected by the scanning signal is applied. The high-voltage terminal Hv is supplied with a DC voltage of, for example, 10 kV from a DC voltage source Va, which is sufficient to excite the phosphor into an electron beam emitted from the surface conduction electron-emitting device. It is an accelerating voltage for applying energy.

The scanning circuit 102 will be described. This circuit includes M switching elements inside (in the drawing, S1 to Sm are schematically shown). Each switching element is connected to the output voltage of the DC voltage source Vx or 0
[V] (ground level) is selected, and is electrically connected to terminals Dox1 to Doxm of the display panel 101. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 103, and can be configured by combining switching elements such as FETs, for example.

In the case of this example, the DC voltage source Vx uses a driving voltage applied to an element that is not scanned based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. It is set to output a constant voltage that is equal to or lower than the voltage.

The control circuit 103 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. The control circuit 103 sends Tscan, Tsft, and Tm to each unit based on the synchronization signal Tsync sent from the synchronization signal separation circuit 106.
ry control signals are generated.

The synchronizing signal separating circuit 106 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 106 includes a vertical synchronizing signal and a horizontal synchronizing signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is input to the shift register 104.

The shift register 104 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 103. Works. (That is, it can be said that the control signal Tsft is a shift clock of the shift register 104). The data for one line of the serial-parallel-converted image (corresponding to drive data for N electron-emitting devices) is output from the shift register 104 as N parallel signals Idl to Idn.

The line memory 105 is a storage device for storing data of one line of an image for a required time only, and stores the contents of Idl to Idn as appropriate according to a control signal Tmry sent from the control circuit 103. The stored contents are output as I'dl to I'dn,
The signal is input to modulation signal generator 107.

The modulation signal generator 107 outputs the image data I '
dl to I'dn are signal sources for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the surface conduction electron-emitting devices in the display panel 101 through terminals Doy1 to Doyn. Applied to the emitting element.

The electron-emitting device of the present invention has the following basic characteristics with respect to the emission current Ie. That is, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage equal to or higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. Therefore, when a pulse-like voltage is applied to the device, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam. At this time, the intensity of the output electron beam can be controlled by changing the pulse peak value Vm. In addition, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw. Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method, or the like can be employed. When implementing the voltage modulation method, a circuit of a voltage modulation method that generates a voltage pulse of a fixed length and modulates the peak value of the pulse appropriately according to input data is used as the modulation signal generator 107. be able to.

When implementing the pulse width modulation method,
As the modulation signal generator 107, a pulse width modulation type circuit that generates a voltage pulse having a constant peak value and appropriately modulates the width of the voltage pulse according to input data can be used.

The shift register 104 and the line memory 10
5 can be either a digital signal type or an analog signal type. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronizing signal separation circuit 106 into a digital signal. For this purpose, an A / D converter may be provided at the output of the synchronization signal separation circuit 106. In connection with this, the line memory 10
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit used for modulation signal generator 107 is slightly different. That is, in the case of a voltage modulation method using a digital signal, the modulation signal generator 107 includes, for example, D / A
A conversion circuit is used, and an amplification circuit and the like are added as necessary.
In the case of the pulse width modulation method, the modulation signal generator 107 includes:
For example, a circuit that combines a high-speed oscillator, a counter that counts the number of waves output from the oscillator, and a comparator that compares the output value of the counter with the output value of the memory is used. If necessary, an amplifier for amplifying the voltage of the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, an amplification circuit using, for example, an operational amplifier or the like can be used as the modulation signal generator 107, and a level shift circuit or the like can be added as needed. In the case of the pulse width modulation method, for example, a voltage-controlled oscillation circuit (VCO) can be employed, and an amplifier for amplifying the voltage up to the drive voltage of the surface conduction electron-emitting device can be added as necessary.

In the image display device of the present invention which can take such a configuration, each of the electron-emitting devices is provided with an external terminal Do.
By applying a voltage via x1 to Doxm and Doy1 to Doyn, electron emission occurs. High voltage terminal H
A high voltage is applied to the metal back 85 or a transparent electrode (not shown) via v to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 84 and emit light to form an image.

The configuration example of the image display device described here is merely an example, and various modifications can be made based on the technical idea of the present invention. For the input signal, the NTSC system has been described, but the input signal is not limited to this, and PAL, SE
CAM system or TV with more scanning lines
Signal (for example, high quality T including MUSE method)
V) system can also be adopted.

Next, a case where the present invention is applied to a ladder-type electron source and an image display device will be described with reference to FIGS.

FIG. 15 is a schematic diagram showing an example of a ladder-type arrangement of electron sources. In FIG. 15, reference numeral 110 denotes an electronic substrate, and 111 denotes an electron-emitting device. 112, Dx1-D
x10 is a common wiring connected to the electron-emitting device 111. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction (this is called an element row). A plurality of the element rows are arranged to constitute an electron source. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold is applied to an element row that wants to emit an electron beam, and a voltage equal to or lower than the electron emission threshold is applied to an element row that does not emit an electron beam. The common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 16 is a schematic diagram showing an example of the structure of a panel in an image display device having a ladder-type electron source. 120 is a grid electrode, 121 is a hole for passing electrons, 122 is Dox1, Dox2,.
oxm. Reference numeral 123 denotes an external terminal composed of G1, G2,..., Gn connected to the grid electrode 120, and 110 denotes an electron source substrate in which the common wiring between the element rows is the same. In FIG. 16, the same portions as those shown in FIGS. 12 and 15 are denoted by the same reference numerals as those shown in these drawings. The major difference between the image display device shown here and the image display device having the simple matrix arrangement shown in FIG. 12 is whether or not a grid electrode 120 is provided between the electron source substrate 110 and the face plate 86.

In FIG. 15, a grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 modulates the electron beam emitted from the surface conduction electron-emitting device. In order to allow the electron beam to pass through a stripe-shaped electrode provided orthogonal to the ladder-type arrangement element row, One circular opening 121 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in the form of a mesh as openings, and a grid may be provided around or near the surface conduction electron-emitting device.

Since the electrode plate manufactured according to the present invention can be fixed at a uniform height from the electron source substrate, it can be suitably used as the above-mentioned grid electrode.

The outer container terminal 122 and grid outer terminal 123 are electrically connected to a control circuit (not shown).

In the image display device of this embodiment, a modulation signal for one line of an image is simultaneously applied to the grid electrode rows in synchronization with the sequential driving (scanning) of the element rows one by one. This makes it possible to control the irradiation of each electron beam to the phosphor and display an image one line at a time. The image display device of the present invention can be used as an image display device as an optical printer configured using a photosensitive drum or the like, in addition to a display device of a television broadcast, a display device of a video conference system, a computer, or the like. it can.

[0085]

Hereinafter, the present invention will be described with reference to examples.
The present invention is not limited to these examples.

(Example 1) An electron source substrate having the structure shown in FIG. 1 was manufactured according to the procedure shown in FIG. First, a metal thin film was formed by a sputtering method on a well-cleaned substrate 001 made of blue sheet glass, and then device electrodes 002 and 003 were formed by a photolithographic etching method. The material is 1000A ゜ N with a thickness of 50A Ti.
i-thin film, and the element electrode interval was 2 μm.

Next, a Y-direction wiring 73 was formed so as to be connected to the device electrode 003. The Y-direction wiring 73 was formed by patterning by a screen printing method using a silver paste and then baked at a maximum temperature of 550 ° C. for 10 minutes. The width was 100 μm and the thickness was 10 μm. Next, the insulating film 11 was formed by printing with a paste containing glass as a main component, followed by baking at a maximum temperature of 550 ° C. for 10 minutes. The insulating film was formed by two-layer printing in order to improve the insulating property between the upper and lower sides, and the film thickness after printing and firing was 30 μm. Next, an X-direction wiring 72 was formed on the insulating film 11 so as to be connected to the device electrode 002. The forming method was the same as that for the Y-direction wiring, and the width was 300 μm and the thickness was 20 μm.

Next, a thin film made of PdO is formed by applying and firing an organic metal solution, and thereafter, patterning is performed by photolithography or the like to form a conductive thin film 004, thereby completing the electron source substrate. Next, the insulating support 13
Was applied to the pattern shown in FIG. 2 using an insulating paste on the X-direction wiring by screen printing, and then baked. Screen printing is multi-layer printing, width is 2
It was finished in a shape of 00 μm and height of 150 μm. The electrode plate is made of a 50 μm-thick Cu film with an electronic opening formed on the long side 220
A rectangular shape with a short side of 110 μm was used.

The fixing of the electrode plate was carried out with the frit glass 22 filled in the adhesive accommodating groove of the insulating support. The frit glass was used as a paste prepared by mixing a crystalline frit glass with a vehicle in which a binder was mixed, and filling was performed using a dispenser. After filling, the frit glass paste was dried and baked (temporary baked) at 300 to 400 ° C. to remove the solvent and the binder. Next, the electrode plate was placed on an insulating support, and the electron source substrate and the electrode plate were aligned so that the electrode plate covered the electron-emitting portion and allowed electrons to pass through the electron opening. After fixing the electron source substrate and the electrode plate so as not to be displaced by a jig, baking at 450 to 500 ° C. while uniformly applying a load to the electrode plate, and fixing the electron source substrate and the electrode plate by the adhesive 22 Completed. As described above, when fixing the electrode plate, the height of the electrode plate and the electron source substrate is increased over the entire surface by providing the gap defining portion and the adhesive accommodating groove which is the portion for bonding and fixing on the insulating support serving as the base. Uniformly and accurately,
And it became possible to do it reliably.

(Example 2) The pattern of the insulating support and the adhesive application portion, which are the fixed portions of the electrode plate, was formed in a pattern as shown in FIG. Otherwise, an electron source substrate was manufactured in the same manner as in Example 1. As a result, the same effect as in Example 1 was confirmed.

(Example 3) The pattern of the insulating support and the adhesive application portion, which are the fixed portions of the electrode plate, was formed in a pattern as shown in FIG. Otherwise, an electron source substrate was manufactured in the same manner as in Example 1. As a result, the same effect as in Example 1 was confirmed.

(Embodiment 4) Next, an example in which an image display device is formed using the electron source substrate manufactured by the method shown in Embodiment 1 will be described with reference to FIG. A face plate 86 having a metal back formed on a phosphor screen is disposed 5 mm above the electron source substrate 31 on which a large number of surface conduction electron-emitting devices before forming formed in Example 1 were formed via a support frame 82. Frit glass is applied in paste form to the joint between the plate, the support frame, and the electron source substrate, dried and dried.
After provisional baking at 400 ° C., baking was performed at 400 to 500 ° C. to seal. The phosphor film 84 was formed by applying a phosphor on a black member having a stripe shape (hereinafter, black stripe) by a slurry method. A metal back 85 is usually provided on the fluorescent film. After the fluorescent film is formed, the metal back is filmed (flattened) on the surface,
It was manufactured by vacuum-depositing Al thereon and finally firing.

At the time of the above-mentioned sealing, in the case of a color,
Since the correspondence between the phosphor of each color of GB and the electron-emitting device is required, high-precision alignment was performed. The atmosphere in the container completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the X-direction wiring and the Y-direction wiring drawn out of the container are used. A voltage was applied between the device electrodes of the electron-emitting device, and the thin film for forming an electron-emitting portion was subjected to an energization process (forming process) to form an electron-emitting portion. The voltage waveform of the forming process is shown in FIG.
As shown in FIG. In FIG. 8, T1 and T2 are the pulse width and pulse interval of the voltage waveform, and in this embodiment, T1 is 1 m
s and T2 were set to 10 ms, the peak value of the triangular wave (peak voltage during forming) was set to 14 V, and the forming process was performed in a vacuum atmosphere of about 1 × 10 −6 [Torr] for 60 seconds.

Next, at a degree of vacuum of about 10-6 [Torr], an exhaust pipe (not shown) was welded by heating with a gas burner to seal the envelope. Finally, a getter process was performed to maintain the degree of vacuum in the container after sealing. This is done by heating a getter (not shown) disposed in the image display device by a heating process such as resistance heating or high-frequency heating immediately before or after sealing to form a deposited film. Is to maintain the degree of vacuum by the gas adsorption action.

In the image display device of the present invention completed as described above, a scanning signal and a modulation signal are applied to each surface conduction electron-emitting device by the signal generation means through the X-direction wiring and the Y-direction wiring. To emit electrons,
An image was displayed by applying a high voltage of 5 kV or more to the metal back, accelerating the electron beam, colliding with the fluorescent film, exciting and emitting light. The electrode plate was maintained at a potential of 150 V by wiring means (not shown) to prevent electric field disturbance. As described above, the image display device manufactured according to the present invention has the electrode plate fixed with high precision and uniformity as described above, and can prevent damage to the electron-emitting device due to charged particles. High image quality was realized.

[0096]

According to the present invention, the electrode plate can be fixed uniformly and with high accuracy without unevenness between the electrode plate and the electron source substrate. Accordingly, high image quality can be achieved while preventing damage to the electron-emitting devices and extending the life of the image display device. Further, since the spacer can be firmly fixed on the electrode plate, it is possible to provide a method for manufacturing an image display device having a sufficient atmospheric pressure resistant structure.

[Brief description of the drawings]

FIG. 1 is a perspective view of an electron source substrate manufactured according to the present invention.

FIG. 2 shows a method of manufacturing an electron source substrate according to the present invention.

FIG. 3 is a cross-sectional view of the image display device of the present invention.

FIG. 4 is a schematic view of an electrode plate support shown in Examples 2 and 3.

FIG. 5 is a schematic view of a vertical surface conduction electron-emitting device used in the present invention.

FIG. 6 is a schematic view of a flat surface conduction electron-emitting device used in the present invention.

FIG. 7 is a schematic view showing a method for manufacturing a flat surface conduction electron-emitting device used in the present invention.

FIG. 8 is a schematic diagram showing an example of a voltage waveform in an energization forming process that can be employed in manufacturing the flat surface conduction electron-emitting device used in the present invention.

FIG. 9 is a schematic view showing an example of a matrix arrangement type electron source substrate manufactured by the present invention.

FIG. 10 is a schematic plan view of a conventional FE type electron-emitting device.

FIG. 11 is a sectional view of a conventional MIM type electron-emitting device.

FIG. 12 is a schematic view illustrating an example of a display panel of an image display device manufactured according to the present invention.

FIG. 13 is a schematic view illustrating an example of a fluorescent film.

FIG. 14 is a block diagram illustrating an example of a drive circuit for performing display on an image display device in accordance with an NTSC television signal.

FIG. 15 is a schematic view showing an example of a ladder-positioned electron source substrate manufactured by the present invention.

FIG. 16 is a schematic view illustrating an example of a display panel of an image display device manufactured according to the present invention.

FIG. 17 is a schematic view of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

001 Substrate 002, 003 Device electrode 004 Conductive thin film 005 Electron emitting portion 11 Insulating layer 13 Support 14 Electrode plate 19 Electron opening 21 Step forming portion 22 Adhesive 71 Electron source substrate 72 X direction wiring 73 Y direction wiring 74 Surface conduction Type electron-emitting device 75 Connection 81 Rear plate 82 Support frame 83 Glass substrate 84 Phosphor film 85 Metal back 86 Face plate 87 High voltage terminal 88 Envelope 91 Black member 92 Phosphor 101 Display panel 102 Scanning circuit 103 Control circuit 104 Shift register 105 Line memory 106 Synchronous signal separation circuit 107 Modulation signal generator Vx, Va DC voltage source 110 Electron source substrate 111 Electron emission elements 112 Dx1 to Dx10 are common wiring for wiring the electron emission elements 120 Grid electrode 121 Electrons pass through Apertures 122 Dox1, Dox2, vessel terminals consisting · · · Doxm for

Claims (4)

[Claims] An electron source substrate on which an electron-emitting device is formed, and an image forming member disposed to face the electron source substrate and on which an image is formed by irradiation of an electron beam emitted from the electron-emitting device. A predetermined distance from the electron source substrate is maintained by the formed face plate substrate, a support frame around the electron source substrate and the face plate substrate, and a support formed on the electron source substrate. A method of manufacturing an image display device, comprising: an electrode plate supported by a substrate; and forming the support, bonding the electrode plate to the electron source substrate and fixing the electrode plate at a predetermined distance. A method for manufacturing a display device. 2. The method for manufacturing an image display device according to claim 1, wherein said electrode plate uses a plate-shaped conductor having an electron transmission hole. 3. The method according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device. 4. The device according to claim 3, wherein the surface conduction electron-emitting device is a flat surface conduction electron-emitting device.
A manufacturing method of the image display device described in the above.