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IN2012DN03080A - - Google Patents

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Publication number
IN2012DN03080A
IN2012DN03080A IN3080DEN2012A IN2012DN03080A IN 2012DN03080 A IN2012DN03080 A IN 2012DN03080A IN 3080DEN2012 A IN3080DEN2012 A IN 3080DEN2012A IN 2012DN03080 A IN2012DN03080 A IN 2012DN03080A
Authority
IN
India
Prior art keywords
circuit
semiconductor
switching element
power supply
supply voltage
Prior art date
Application number
Inventor
Yutaka Shionoiri
Kosei Noda
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of IN2012DN03080A publication Critical patent/IN2012DN03080A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon).
IN3080DEN2012 2009-10-30 2010-10-06 IN2012DN03080A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009250665 2009-10-30
PCT/JP2010/067999 WO2011052386A1 (en) 2009-10-30 2010-10-06 Semiconductor device

Publications (1)

Publication Number Publication Date
IN2012DN03080A true IN2012DN03080A (en) 2015-07-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
IN3080DEN2012 IN2012DN03080A (en) 2009-10-30 2010-10-06

Country Status (10)

Country Link
US (3) US20110101333A1 (en)
EP (1) EP2494595A4 (en)
JP (8) JP2011119671A (en)
KR (6) KR20120091239A (en)
CN (1) CN102640279B (en)
IN (1) IN2012DN03080A (en)
MY (1) MY172111A (en)
SG (3) SG10201903542TA (en)
TW (2) TWI570882B (en)
WO (1) WO2011052386A1 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600105B (en) * 2009-12-11 2018-05-08 株式会社半导体能源研究所 Semiconductor device
KR20180020327A (en) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8541781B2 (en) * 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102646592B (en) * 2011-05-03 2014-12-03 京东方科技集团股份有限公司 Thin film field-effect transistor device and preparation method thereof
WO2012157472A1 (en) * 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
JP6005401B2 (en) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2013061895A1 (en) * 2011-10-28 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8907392B2 (en) * 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US9859114B2 (en) * 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP6034048B2 (en) * 2012-04-23 2016-11-30 株式会社半導体エネルギー研究所 Display device, electronic equipment
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching converter
TWI581404B (en) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
JP2014057296A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
JP2014057298A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
US9034217B2 (en) * 2013-06-07 2015-05-19 Ngk Insulators, Ltd. Voltage nonlinear resistor
CN103474473B (en) * 2013-09-10 2016-02-03 深圳市华星光电技术有限公司 A kind of thin film transistor switch and manufacture method thereof
US9257290B2 (en) * 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911200B1 (en) 2014-02-24 2020-06-03 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911195B1 (en) 2014-02-24 2020-05-27 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
JP6150752B2 (en) * 2014-03-14 2017-06-21 株式会社日本製鋼所 Oxide-based semiconductor material and semiconductor element
WO2015159179A1 (en) * 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6418794B2 (en) * 2014-06-09 2018-11-07 東京エレクトロン株式会社 MODIFICATION TREATMENT METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
JP2017162852A (en) * 2016-03-07 2017-09-14 株式会社ジャパンディスプレイ Semiconductor device and display device
KR102458660B1 (en) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
CN106129122B (en) * 2016-08-31 2018-12-11 京东方科技集团股份有限公司 Oxide thin film transistor and preparation method thereof, array substrate, display device
JP6832656B2 (en) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ Manufacturing method of semiconductor devices
WO2018180842A1 (en) * 2017-03-29 2018-10-04 シャープ株式会社 Tft substrate, tft substrate production method, and display device
US10340387B2 (en) * 2017-09-20 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate
TWI677741B (en) * 2018-11-12 2019-11-21 友達光電股份有限公司 Display apparatus
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
JP6861871B2 (en) 2020-04-14 2021-04-21 株式会社半導体エネルギー研究所 Display device
KR20220094259A (en) * 2020-12-28 2022-07-06 삼성디스플레이 주식회사 Display device and method of manufacturing the same
CN113921048A (en) * 2021-10-19 2022-01-11 吉林大学 Integrated circuit capable of carrying out quaternary logic operation based on two-bit transistor memory

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154549A (en) * 1984-01-24 1985-08-14 Fujitsu Ltd Manufacture of semiconductor device
JPH0792500A (en) * 1993-06-29 1995-04-07 Toshiba Corp Semiconductor device
JPH08264798A (en) * 1995-03-23 1996-10-11 Semiconductor Energy Lab Co Ltd Semiconductor device and semiconductor device forming method
US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP3633061B2 (en) * 1995-10-19 2005-03-30 三菱電機株式会社 Semiconductor integrated circuit device
JP4086925B2 (en) * 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 Active matrix display
JPH11233789A (en) * 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2000243851A (en) * 1999-02-17 2000-09-08 Hitachi Ltd Semiconductor integrated circuit device
EP2256808A2 (en) * 1999-04-30 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method therof
TW567363B (en) * 1999-05-14 2003-12-21 Seiko Epson Corp Method for driving electrooptical device, drive circuit, electrooptical device, and electronic device
JP2001053599A (en) * 1999-08-12 2001-02-23 Nec Corp Semiconductor integrated circuit
JP3735855B2 (en) * 2000-02-17 2006-01-18 日本電気株式会社 Semiconductor integrated circuit device and driving method thereof
JP4275336B2 (en) * 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4736313B2 (en) * 2002-09-10 2011-07-27 日本電気株式会社 Thin film semiconductor device
US6821826B1 (en) * 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
JP4045446B2 (en) * 2004-02-12 2008-02-13 カシオ計算機株式会社 Transistor array and image processing apparatus
JP2006005116A (en) * 2004-06-17 2006-01-05 Casio Comput Co Ltd Film-forming method, semiconductor film, and multilayer insulation film
JP5053537B2 (en) * 2004-11-10 2012-10-17 キヤノン株式会社 Semiconductor device using amorphous oxide
JP2006278621A (en) * 2005-03-29 2006-10-12 Toppan Printing Co Ltd Manufacturing method of transistor logic circuit
KR101219069B1 (en) * 2005-05-30 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
JP4842017B2 (en) * 2005-05-30 2011-12-21 株式会社半導体エネルギー研究所 Semiconductor device
JP4560502B2 (en) * 2005-09-06 2010-10-13 キヤノン株式会社 Field effect transistor
JP5006598B2 (en) * 2005-09-16 2012-08-22 キヤノン株式会社 Field effect transistor
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP5078246B2 (en) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
EP1995787A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
CN101309864B (en) * 2005-11-18 2012-06-27 出光兴产株式会社 Semiconductor thin film, method for manufacturing the same, and thin film transistor
TWI339442B (en) * 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
JP2007251100A (en) * 2006-03-20 2007-09-27 Epson Imaging Devices Corp Electro-optical device, electronic apparatus, and semiconductor device
JP2007286150A (en) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd Electrooptical device, and tft substrate for controlling electric current and method of manufacturing the same
JP2008053976A (en) * 2006-08-23 2008-03-06 Toshiba Lsi System Support Kk Semiconductor device
TWI651701B (en) * 2006-09-29 2019-02-21 日商半導體能源研究所股份有限公司 Display device and electronic device
KR20080050690A (en) * 2006-12-04 2008-06-10 삼성전자주식회사 Method for manufacturing organic light emitting diode display
JP2008147418A (en) * 2006-12-11 2008-06-26 Hitachi Ltd Thin film transistor device, image display device, and method of manufacturing same
KR20080073944A (en) * 2007-02-07 2008-08-12 엘지전자 주식회사 Hybrid organic electroluminescence device and manufacturing method thereof
JP2008235871A (en) * 2007-02-20 2008-10-02 Canon Inc Method for forming thin film transistor and display unit
WO2008136505A1 (en) * 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and methods for manufacturing the semiconductor device and the thin film transistor
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5037221B2 (en) * 2007-05-18 2012-09-26 株式会社半導体エネルギー研究所 Liquid crystal display device and electronic device
JP5242083B2 (en) * 2007-06-13 2013-07-24 出光興産株式会社 Crystalline oxide semiconductor and thin film transistor using the same
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8033273B2 (en) * 2007-07-02 2011-10-11 Denso Corporation Plasma ignition system
JP2009076879A (en) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
TW200921226A (en) * 2007-11-06 2009-05-16 Wintek Corp Panel structure and manufacture method thereof
JP2009130209A (en) * 2007-11-26 2009-06-11 Fujifilm Corp Radiation imaging device
JP5430846B2 (en) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5366517B2 (en) * 2007-12-03 2013-12-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR100936874B1 (en) * 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 Method of manufacturing a thin film transistor and A method of manufacturing an organic light emitting display having the thin film transistor
JP2009158528A (en) * 2007-12-25 2009-07-16 Sharp Corp Semiconductor device
JP5121478B2 (en) * 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト Optical sensor element, imaging device, electronic device, and memory element
JP5305696B2 (en) * 2008-03-06 2013-10-02 キヤノン株式会社 Semiconductor device processing method
JP2009250665A (en) 2008-04-02 2009-10-29 Nikon Corp Measuring apparatus
US20100141230A1 (en) * 2008-07-17 2010-06-10 Exar Corporation Self-tuning sensorless digital current-mode controller with accurate current sharing for multiphase dc-dc converters
JP5781720B2 (en) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of semiconductor device
TWI650848B (en) * 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
WO2011068032A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102450889B1 (en) * 2009-12-04 2022-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2526619B1 (en) * 2010-01-20 2016-03-23 Semiconductor Energy Laboratory Co. Ltd. Signal processing circuit and method for driving the same
JP6298662B2 (en) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
TWI724231B (en) * 2016-09-09 2021-04-11 日商半導體能源硏究所股份有限公司 Storage device, method for operating storage device, semiconductor device, electronic component, and electronic device

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