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IL248686B - Hermetically sealed package having stress reducing layer - Google Patents

Hermetically sealed package having stress reducing layer

Info

Publication number
IL248686B
IL248686B IL248686A IL24868616A IL248686B IL 248686 B IL248686 B IL 248686B IL 248686 A IL248686 A IL 248686A IL 24868616 A IL24868616 A IL 24868616A IL 248686 B IL248686 B IL 248686B
Authority
IL
Israel
Prior art keywords
hermetically sealed
sealed package
reducing layer
stress reducing
stress
Prior art date
Application number
IL248686A
Other languages
Hebrew (he)
Other versions
IL248686A0 (en
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IL248686A0 publication Critical patent/IL248686A0/en
Publication of IL248686B publication Critical patent/IL248686B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • B81B7/0045Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0051Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0207Bolometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0109Bonding an individual cap on the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/03Bonding two components
    • B81C2203/033Thermal bonding
    • B81C2203/035Soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
IL248686A 2014-08-11 2016-11-01 Hermetically sealed package having stress reducing layer IL248686B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/050589 WO2016024946A1 (en) 2014-08-11 2014-08-11 Hermetically sealed package having stress reducing layer

Publications (2)

Publication Number Publication Date
IL248686A0 IL248686A0 (en) 2017-01-31
IL248686B true IL248686B (en) 2020-09-30

Family

ID=51398909

Family Applications (2)

Application Number Title Priority Date Filing Date
IL248686A IL248686B (en) 2014-08-11 2016-11-01 Hermetically sealed package having stress reducing layer
IL276281A IL276281B (en) 2014-08-11 2020-07-26 Hermetically sealed package having stress reducing layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL276281A IL276281B (en) 2014-08-11 2020-07-26 Hermetically sealed package having stress reducing layer

Country Status (7)

Country Link
EP (1) EP3180288A1 (en)
JP (1) JP6487032B2 (en)
KR (1) KR101931010B1 (en)
CN (1) CN106414309B (en)
CA (1) CA2946526C (en)
IL (2) IL248686B (en)
WO (1) WO2016024946A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016122318A1 (en) 2016-11-21 2018-05-24 Infineon Technologies Ag Connection structure of a power semiconductor device
DE102017118899B4 (en) 2016-12-15 2020-06-18 Taiwan Semiconductor Manufacturing Co. Ltd. Sealing ring structures and processes for their manufacture
US10453832B2 (en) * 2016-12-15 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structures and methods of forming same
FR3061549B1 (en) * 2016-12-30 2020-10-02 Commissariat Energie Atomique ELECTROMAGNETIC RADIATION DETECTOR AND ESPECIALLY INFRARED RADIATION DETECTOR AND PROCESS FOR ITS REALIZATION
US10163974B2 (en) 2017-05-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming absorption enhancement structure for image sensor
US10438980B2 (en) 2017-05-31 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with a high absorption layer
US10559563B2 (en) 2017-06-26 2020-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing monolithic three-dimensional (3D) integrated circuits
US10304782B2 (en) 2017-08-25 2019-05-28 Infineon Technologies Ag Compressive interlayer having a defined crack-stop edge extension
US11127693B2 (en) 2017-08-25 2021-09-21 Infineon Technologies Ag Barrier for power metallization in semiconductor devices
KR102040593B1 (en) * 2018-02-14 2019-11-06 주식회사 오킨스전자 Filter chip package and wafer level package having improved bonding feature, and method for manufacturing the same
CN112368824B (en) * 2018-07-10 2024-06-18 日本电气硝子株式会社 Package, method for manufacturing package, lid with bonding material, and method for manufacturing lid with bonding material
US10734320B2 (en) 2018-07-30 2020-08-04 Infineon Technologies Austria Ag Power metallization structure for semiconductor devices
US11031321B2 (en) 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
CN110265521B (en) * 2019-04-29 2020-10-27 华灿光电(苏州)有限公司 Flip light-emitting diode chip and manufacturing method thereof
KR102328922B1 (en) * 2019-05-27 2021-11-22 주식회사 아이디피 Wafer level packaging method with solderball for Cap wafer, and Cap wafer
EP4020541A4 (en) * 2019-08-20 2022-10-12 Mitsubishi Electric Corporation Semiconductor package
CN110577186A (en) * 2019-09-12 2019-12-17 南通大学 Three-dimensional packaging structure of MEMS infrared detector and manufacturing method thereof
CN111446212A (en) * 2020-04-16 2020-07-24 中国电子科技集团公司第四十三研究所 Ceramic integrated packaging shell and manufacturing process thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788672B2 (en) * 1989-12-19 1998-08-20 富士通株式会社 Semiconductor device
DE69009958T2 (en) * 1989-12-19 1994-09-22 Fujitsu Ltd Adhesive structure for semiconductor device and method for their production.
JPH06140527A (en) * 1992-10-28 1994-05-20 Sumitomo Electric Ind Ltd Sealing device component for semiconductor
US5701008A (en) 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
JPH11307688A (en) * 1998-04-17 1999-11-05 Ngk Spark Plug Co Ltd Wiring board and its manufacture
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6342407B1 (en) * 2000-12-07 2002-01-29 International Business Machines Corporation Low stress hermetic seal
EP1571704A1 (en) * 2004-03-04 2005-09-07 Interuniversitair Microelektronica Centrum Vzw Method for depositing a solder material on a substrate in the form of a predetermined pattern
JP2009200093A (en) * 2008-02-19 2009-09-03 Murata Mfg Co Ltd Hollow type electronic component
JPWO2010021267A1 (en) * 2008-08-21 2012-01-26 株式会社村田製作所 Electronic component device and manufacturing method thereof
US7948178B2 (en) * 2009-03-04 2011-05-24 Global Oled Technology Llc Hermetic seal
US8809784B2 (en) * 2010-10-21 2014-08-19 Raytheon Company Incident radiation detector packaging
JP5716627B2 (en) * 2011-10-06 2015-05-13 オムロン株式会社 Wafer bonding method and bonded portion structure

Also Published As

Publication number Publication date
EP3180288A1 (en) 2017-06-21
IL276281A (en) 2020-09-30
JP2017527113A (en) 2017-09-14
CA2946526A1 (en) 2016-02-18
KR101931010B1 (en) 2018-12-19
KR20160146879A (en) 2016-12-21
CA2946526C (en) 2021-03-23
IL248686A0 (en) 2017-01-31
CN106414309A (en) 2017-02-15
WO2016024946A1 (en) 2016-02-18
CN106414309B (en) 2020-02-28
IL276281B (en) 2021-05-31
JP6487032B2 (en) 2019-03-20

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