GB894739A - Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting - Google Patents
Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-meltingInfo
- Publication number
- GB894739A GB894739A GB2941/61A GB294161A GB894739A GB 894739 A GB894739 A GB 894739A GB 2941/61 A GB2941/61 A GB 2941/61A GB 294161 A GB294161 A GB 294161A GB 894739 A GB894739 A GB 894739A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- melting
- seed
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004857 zone melting Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10L—FUELS NOT OTHERWISE PROVIDED FOR; NATURAL GAS; SYNTHETIC NATURAL GAS OBTAINED BY PROCESSES NOT COVERED BY SUBCLASSES C10G, C10K; LIQUEFIED PETROLEUM GAS; ADDING MATERIALS TO FUELS OR FIRES TO REDUCE SMOKE OR UNDESIRABLE DEPOSITS OR TO FACILITATE SOOT REMOVAL; FIRELIGHTERS
- C10L1/00—Liquid carbonaceous fuels
- C10L1/04—Liquid carbonaceous fuels essentially based on blends of hydrocarbons
- C10L1/06—Liquid carbonaceous fuels essentially based on blends of hydrocarbons for spark ignition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
894,739. Zone-melting. PHILIPS ELECTRICAL INDUSTRIES Ltd. Jan. 25, 1961 [Jan. 28, 1960], No. 2941/61. Drawings to Specification. Class 32. In the formation of a monocrystalline rod of silicon having a protective film of silicon monoxide by zone-melting in an atmosphere comprising oxygen, a molten zone is passed from one end of the polycrystalline rod into a monocrystalline seed joined to the other end and back to the first mentioned end. The rod may be supported in a crucible or at each end only. The passage of the molten zone in the first direction may be through a gas-liquid surface layer, the cross-sectional area of the zone being gradually increased to its maximum within the seed on reversal of direction. Heating may be by a surrounding induction coil. Initial formation of the molten zone at the end of the polycrystalline rod spaced from the seed ensures that irregularities in the initially formed silicon monoxide film affect one end only of the resulting monocrystalline rod, which end may be cut off from the rest of the rod.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL247855 | 1960-01-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB894739A true GB894739A (en) | 1962-04-26 |
Family
ID=31979972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2941/61A Expired GB894739A (en) | 1960-01-28 | 1961-01-25 | Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3092462A (en) |
| DE (1) | DE1209997B (en) |
| FR (1) | FR1280914A (en) |
| GB (1) | GB894739A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3519399A (en) * | 1967-05-22 | 1970-07-07 | Hughes Aircraft Co | Method for growing single crystals of semiconductors |
| US4126509A (en) * | 1975-11-14 | 1978-11-21 | Siemens Aktiengesellschaft | Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1303150B (en) * | 1961-01-13 | 1971-05-13 | Philips Nv | |
| US4120743A (en) * | 1975-12-31 | 1978-10-17 | Motorola, Inc. | Crossed grain growth |
| US4532000A (en) * | 1983-09-28 | 1985-07-30 | Hughes Aircraft Company | Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
| DE4105910A1 (en) * | 1991-02-26 | 1992-08-27 | Bayer Ag | METHOD FOR PRODUCING METAL FILMS AND THE USE THEREOF |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2789039A (en) * | 1953-08-25 | 1957-04-16 | Rca Corp | Method and apparatus for zone melting |
| GB745698A (en) * | 1953-09-25 | 1956-02-29 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
| NL95386C (en) * | 1954-02-24 | |||
| DE1051013B (en) * | 1955-06-17 | 1959-02-19 | Western Electric Company, Incorporated, New York, N. Y. (V. St. A.) | Method for keeping liquids, in particular melts, free-floating |
| US2897329A (en) * | 1957-09-23 | 1959-07-28 | Sylvania Electric Prod | Zone melting apparatus |
| US2967115A (en) * | 1958-07-25 | 1961-01-03 | Gen Electric | Method of depositing silicon on a silica coated substrate |
| US2905798A (en) * | 1958-09-15 | 1959-09-22 | Lindberg Eng Co | Induction heating apparatus |
-
1961
- 1961-01-16 US US82747A patent/US3092462A/en not_active Expired - Lifetime
- 1961-01-24 DE DEN19476A patent/DE1209997B/en active Pending
- 1961-01-25 GB GB2941/61A patent/GB894739A/en not_active Expired
- 1961-01-26 FR FR850865A patent/FR1280914A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3519399A (en) * | 1967-05-22 | 1970-07-07 | Hughes Aircraft Co | Method for growing single crystals of semiconductors |
| US4126509A (en) * | 1975-11-14 | 1978-11-21 | Siemens Aktiengesellschaft | Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1209997B (en) | 1966-02-03 |
| FR1280914A (en) | 1962-01-08 |
| US3092462A (en) | 1963-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB894739A (en) | Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting | |
| GB916390A (en) | Method of drawing a semi-conductor rod from a melt | |
| GB1034503A (en) | Improvements in or relating to the production of crystalline material | |
| GB1022427A (en) | An apparatus for zone-by-zone melting a rod of crystalline material | |
| GB1029804A (en) | A process for producing a substantially monocrystalline rod of semiconductor material | |
| JPS51134071A (en) | Method to eliminate crystal defects of silicon | |
| JPS5315081A (en) | Junction type field effect transistor and its production | |
| GB1079870A (en) | A method of melting a rod of crystalline material zone-by-zone | |
| GB709364A (en) | Improvements in and relating to methods of stabilizing semiconductor materials | |
| GB1059960A (en) | The production of semi-conductor rods | |
| GB1031560A (en) | Improvements in or relating to the production of monocrystalline semiconductor material | |
| GB1095587A (en) | ||
| GB1375132A (en) | ||
| GB1081827A (en) | Improvements in or relating to a floating zone process | |
| GB1175449A (en) | Crucible-Free Zone-by-Zone Melting Operations | |
| GB1006034A (en) | A method of producing a rod of semi-conductor material | |
| GB1191166A (en) | Zone Melting | |
| JPS5365659A (en) | Semiconductor heat diffusion device | |
| GB1084930A (en) | Zone-by-zone melting of a rod of semi-conductor material | |
| Vavilov et al. | Influence of the Irradiation Temperature and of the Nature of Dopant on the Formation of Defects in n-Type Electron-Irradiated Si | |
| GB751126A (en) | Improvements in or relating to methods of producing semi-conductive monocrystals | |
| GB1230726A (en) | ||
| GB1312884A (en) | Zone refining process | |
| GB931692A (en) | A process for doping semi-conductor material with boron | |
| JPS5326663A (en) | Manu facture of semiconductor device |