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GB1006034A - A method of producing a rod of semi-conductor material - Google Patents

A method of producing a rod of semi-conductor material

Info

Publication number
GB1006034A
GB1006034A GB498564A GB498564A GB1006034A GB 1006034 A GB1006034 A GB 1006034A GB 498564 A GB498564 A GB 498564A GB 498564 A GB498564 A GB 498564A GB 1006034 A GB1006034 A GB 1006034A
Authority
GB
United Kingdom
Prior art keywords
rod
coil
zone
pulling
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB498564A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1006034A publication Critical patent/GB1006034A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,006,034. Crystal - pulling. SIEMENS SCHUCKERTWERKE A.G. Feb. 5, 1964 [March 13, 1963], No. 4985/64. Heading BIS. A monocrystalline rod 6 of silicon is pulled from one side of a molten zone 7 which is produced at the top of a larger rod 5 by means of rotation of rod 5 and the heating action of an induction coil 8 situated above zone 7 on the side opposite rod 6. Coil 8 may be shaped as shown in Figs. 3, 4 or 5 (not shown). Molten zone 7 may be maintained by relative movement of rod 5 and coil 8 or by feeding a further silicon rod through coil 8 into zone 7, Fig. 5 (not shown). In the latter case, rod 5 and molten zone 7 may be supported in a graphite crucible, which may be heated. Rod 6 may be rotated during pulling. Pulling may be effected in a protective gas or in a vacuum. The pulled rod may have a diameter of more than 35 mm.
GB498564A 1963-03-13 1964-02-05 A method of producing a rod of semi-conductor material Expired GB1006034A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0084132 DE1256626B (en) 1963-03-13 1963-03-13 Process for the production of semiconductor rods by drawing from the melt

Publications (1)

Publication Number Publication Date
GB1006034A true GB1006034A (en) 1965-09-29

Family

ID=7511486

Family Applications (1)

Application Number Title Priority Date Filing Date
GB498564A Expired GB1006034A (en) 1963-03-13 1964-02-05 A method of producing a rod of semi-conductor material

Country Status (4)

Country Link
BE (1) BE645065A (en)
CH (1) CH416574A (en)
DE (1) DE1256626B (en)
GB (1) GB1006034A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB775817A (en) * 1954-03-09 1957-05-29 Siemens Ag Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies
DE1002741B (en) * 1955-05-28 1957-02-21 Siemens Ag Process for the production in the melting process and / or for remelting an inorganic stoechiometric compound in crystalline form
NL237834A (en) * 1958-04-09
NL103463C (en) * 1958-07-11
NL133150C (en) * 1959-12-23

Also Published As

Publication number Publication date
CH416574A (en) 1966-07-15
DE1256626B (en) 1967-12-21
BE645065A (en) 1964-09-14

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