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GB2486039B - CMOS time delay integration sensor for X-ray imaging applications - Google Patents

CMOS time delay integration sensor for X-ray imaging applications

Info

Publication number
GB2486039B
GB2486039B GB1113980.5A GB201113980A GB2486039B GB 2486039 B GB2486039 B GB 2486039B GB 201113980 A GB201113980 A GB 201113980A GB 2486039 B GB2486039 B GB 2486039B
Authority
GB
United Kingdom
Prior art keywords
time delay
ray imaging
imaging applications
delay integration
integration sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1113980.5A
Other versions
GB2486039A (en
GB201113980D0 (en
Inventor
Li Shizu
Wang Chinlee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X-SCAN IMAGING CORP
X Scan Imaging Corp
Original Assignee
X-SCAN IMAGING CORP
X Scan Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/927,961 external-priority patent/US8039811B1/en
Application filed by X-SCAN IMAGING CORP, X Scan Imaging Corp filed Critical X-SCAN IMAGING CORP
Publication of GB201113980D0 publication Critical patent/GB201113980D0/en
Publication of GB2486039A publication Critical patent/GB2486039A/en
Application granted granted Critical
Publication of GB2486039B publication Critical patent/GB2486039B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
GB1113980.5A 2010-11-30 2011-08-12 CMOS time delay integration sensor for X-ray imaging applications Active GB2486039B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/927,961 US8039811B1 (en) 2009-12-04 2010-11-30 CMOS time delay integration sensor for X-ray imaging applications

Publications (3)

Publication Number Publication Date
GB201113980D0 GB201113980D0 (en) 2011-09-28
GB2486039A GB2486039A (en) 2012-06-06
GB2486039B true GB2486039B (en) 2016-10-05

Family

ID=44764467

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1113980.5A Active GB2486039B (en) 2010-11-30 2011-08-12 CMOS time delay integration sensor for X-ray imaging applications

Country Status (5)

Country Link
JP (1) JP5809492B2 (en)
CN (1) CN102611853B (en)
DE (1) DE102011052874B4 (en)
GB (1) GB2486039B (en)
IT (1) ITUD20110133A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220201235A1 (en) * 2020-12-22 2022-06-23 Samsung Electronics Co., Ltd. Time-resolving computational image sensor architecture for time-of-flight, high-dynamic-range, and high-speed imaging

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104270584A (en) * 2014-09-15 2015-01-07 天津大学 Current accumulation pixel structure for CMOS-TDI image sensor
JP6623734B2 (en) * 2015-12-14 2019-12-25 セイコーエプソン株式会社 Image reading device and semiconductor device
FR3047112B1 (en) * 2016-01-22 2018-01-19 Teledyne E2V Semiconductors Sas MULTILINEAR IMAGE SENSOR WITH LOAD TRANSFER WITH INTEGRATION TIME ADJUSTMENT
CN110034136B (en) * 2017-12-08 2022-12-16 X-Scan映像股份有限公司 Multi-energy X-ray detector based on integrated side-by-side pixel array sensor
KR102639599B1 (en) * 2018-12-28 2024-02-21 엘지디스플레이 주식회사 Digital x-ray detector and method for driving the same
US20240319116A1 (en) * 2021-07-13 2024-09-26 Hamamatsu Photonics K.K. X-ray image acquisition device and x-ray image acquisition system
CN113824910B (en) * 2021-08-10 2023-07-21 西安理工大学 An advanced digital TDI acceleration circuit in the analog domain and its acceleration implementation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007141388A1 (en) * 2006-06-05 2007-12-13 Planmeca Oy X-ray imaging sensor and x-ray imaging method
CN101883221A (en) * 2010-06-29 2010-11-10 天津大学 Circuit and method for realizing TDI in CMOS image sensor
US8039811B1 (en) * 2009-12-04 2011-10-18 X-Scan Imaging Corporation CMOS time delay integration sensor for X-ray imaging applications

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US6678048B1 (en) 1998-07-20 2004-01-13 Sandia Corporation Information-efficient spectral imaging sensor with TDI
US7397506B2 (en) * 1998-08-06 2008-07-08 Intel Corporation Reducing the effect of noise in an imaging system
AU1074901A (en) 1999-10-05 2001-05-10 California Institute Of Technology Time-delayed-integration imaging with active pixel sensors
US7268814B1 (en) * 1999-10-05 2007-09-11 California Institute Of Technology Time-delayed-integration imaging with active pixel sensors
JP4265964B2 (en) * 2003-11-12 2009-05-20 富士フイルム株式会社 Radiation image reading method and apparatus
US7532242B1 (en) * 2004-07-26 2009-05-12 Raytheon Company Pipelined amplifier time delay integration
FR2906081B1 (en) * 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act CMOS LINEAR IMAGE SENSOR WITH CHARGE TRANSFER TYPE OPERATION
US7675561B2 (en) 2006-09-28 2010-03-09 Cypress Semiconductor Corporation Time delayed integration CMOS image sensor with zero desynchronization
DE102007030985B4 (en) 2007-07-04 2009-04-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Image sensor, method of operating an image sensor and computer program
GB0806427D0 (en) 2008-04-09 2008-05-14 Cmosis Nv Parallel analog-to-digital conversion in pixel arrays
JP2010135464A (en) * 2008-12-03 2010-06-17 Konica Minolta Business Technologies Inc Solid-state imaging element, and imaging apparatus
JP5257134B2 (en) 2009-02-25 2013-08-07 コニカミノルタビジネステクノロジーズ株式会社 Solid-state imaging device and imaging apparatus including the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007141388A1 (en) * 2006-06-05 2007-12-13 Planmeca Oy X-ray imaging sensor and x-ray imaging method
US8039811B1 (en) * 2009-12-04 2011-10-18 X-Scan Imaging Corporation CMOS time delay integration sensor for X-ray imaging applications
CN101883221A (en) * 2010-06-29 2010-11-10 天津大学 Circuit and method for realizing TDI in CMOS image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220201235A1 (en) * 2020-12-22 2022-06-23 Samsung Electronics Co., Ltd. Time-resolving computational image sensor architecture for time-of-flight, high-dynamic-range, and high-speed imaging

Also Published As

Publication number Publication date
DE102011052874B4 (en) 2021-08-05
GB2486039A (en) 2012-06-06
JP2012120153A (en) 2012-06-21
JP5809492B2 (en) 2015-11-11
DE102011052874A1 (en) 2012-06-14
GB201113980D0 (en) 2011-09-28
CN102611853A (en) 2012-07-25
ITUD20110133A1 (en) 2012-05-31
CN102611853B (en) 2016-06-08

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