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GB2232530B - A high precision semiconductor resistor device - Google Patents

A high precision semiconductor resistor device

Info

Publication number
GB2232530B
GB2232530B GB9015141A GB9015141A GB2232530B GB 2232530 B GB2232530 B GB 2232530B GB 9015141 A GB9015141 A GB 9015141A GB 9015141 A GB9015141 A GB 9015141A GB 2232530 B GB2232530 B GB 2232530B
Authority
GB
United Kingdom
Prior art keywords
high precision
resistor device
semiconductor resistor
precision semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9015141A
Other versions
GB9015141D0 (en
GB2232530A (en
Inventor
Kazuko Moriya
Yasunari Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1290499A external-priority patent/JP2864576B2/en
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of GB9015141D0 publication Critical patent/GB9015141D0/en
Publication of GB2232530A publication Critical patent/GB2232530A/en
Application granted granted Critical
Publication of GB2232530B publication Critical patent/GB2232530B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9015141A 1988-11-22 1989-11-21 A high precision semiconductor resistor device Expired - Fee Related GB2232530B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29508388 1988-11-22
JP8109489 1989-03-31
JP1290499A JP2864576B2 (en) 1988-11-22 1989-11-08 Semiconductor device
PCT/JP1989/001180 WO1990005995A1 (en) 1988-11-22 1989-11-21 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9015141D0 GB9015141D0 (en) 1990-09-05
GB2232530A GB2232530A (en) 1990-12-12
GB2232530B true GB2232530B (en) 1993-09-22

Family

ID=27303490

Family Applications (3)

Application Number Title Priority Date Filing Date
GB9301741A Withdrawn GB2262187A (en) 1988-11-22 1989-11-21 Semiconductor resistors
GB9015141A Expired - Fee Related GB2232530B (en) 1988-11-22 1989-11-21 A high precision semiconductor resistor device
GB9301742A Expired - Fee Related GB2262188B (en) 1988-11-22 1993-01-29 A high precision semiconductor resistor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9301741A Withdrawn GB2262187A (en) 1988-11-22 1989-11-21 Semiconductor resistors

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9301742A Expired - Fee Related GB2262188B (en) 1988-11-22 1993-01-29 A high precision semiconductor resistor device

Country Status (3)

Country Link
GB (3) GB2262187A (en)
HK (2) HK105997A (en)
WO (1) WO1990005995A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960015322B1 (en) * 1993-07-23 1996-11-07 현대전자산업 주식회사 Method for manufacturing semiconductor elements
DE19633549C2 (en) * 1996-08-20 2002-07-11 Infineon Technologies Ag Integrated circuit with a protective layer that extends at least partially over a saw channel
KR100392254B1 (en) * 2000-12-05 2003-07-23 한국전자통신연구원 Thin film Inductor and Fabrication Method of Thin film Inductor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123157A (en) * 1974-03-18 1975-09-27
JPS5449082A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Semiconductor device
GB2016208A (en) * 1978-01-25 1979-09-19 Western Electric Co Integrated circuit including a resistive element
JPS5918670A (en) * 1982-07-22 1984-01-31 Nec Corp Semiconductor device
JPS6050553A (en) * 1983-08-30 1985-03-20 Fujitsu Ltd Multicolor electronic recording method
EP0192871A1 (en) * 1985-01-31 1986-09-03 THORN EMI North America Inc. A method of forming a polysilicon resistor in a polycide line
GB2177541A (en) * 1985-07-04 1987-01-21 Sgs Microelettronica Spa Method of making an implanted resistor, and resistor obtained thereby
JPS6298815A (en) * 1985-10-25 1987-05-08 Hitachi Ltd Semiconductor integrated circuit device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6907227A (en) * 1969-05-10 1970-11-12
US4209716A (en) * 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
JPS5512315A (en) * 1978-07-06 1980-01-28 Sharp Corp Electronic range
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS5650553A (en) * 1979-09-29 1981-05-07 Fujitsu Ltd Semiconductor device
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
DE3276513D1 (en) * 1982-11-26 1987-07-09 Ibm Self-biased resistor structure and application to interface circuits realization
IT1213214B (en) * 1984-09-05 1989-12-14 Ates Componenti Elettron RESISTIVE VOLTAGE DIVIDER FOR INTEGRATED CIRCUITS.

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123157A (en) * 1974-03-18 1975-09-27
JPS5449082A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Semiconductor device
GB2016208A (en) * 1978-01-25 1979-09-19 Western Electric Co Integrated circuit including a resistive element
JPS5918670A (en) * 1982-07-22 1984-01-31 Nec Corp Semiconductor device
JPS6050553A (en) * 1983-08-30 1985-03-20 Fujitsu Ltd Multicolor electronic recording method
EP0192871A1 (en) * 1985-01-31 1986-09-03 THORN EMI North America Inc. A method of forming a polysilicon resistor in a polycide line
GB2177541A (en) * 1985-07-04 1987-01-21 Sgs Microelettronica Spa Method of making an implanted resistor, and resistor obtained thereby
JPS6298815A (en) * 1985-10-25 1987-05-08 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
WO1990005995A1 (en) 1990-05-31
GB2262188B (en) 1993-09-15
GB9301741D0 (en) 1993-03-17
GB9015141D0 (en) 1990-09-05
GB9301742D0 (en) 1993-03-17
GB2232530A (en) 1990-12-12
HK105997A (en) 1997-08-22
GB2262187A (en) 1993-06-09
GB2262188A (en) 1993-06-09
HK120897A (en) 1997-09-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071121