GB1491118A - Semi-conductor diffusion furnace components - Google Patents
Semi-conductor diffusion furnace componentsInfo
- Publication number
- GB1491118A GB1491118A GB45521/75A GB4552175A GB1491118A GB 1491118 A GB1491118 A GB 1491118A GB 45521/75 A GB45521/75 A GB 45521/75A GB 4552175 A GB4552175 A GB 4552175A GB 1491118 A GB1491118 A GB 1491118A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- sintered
- semi
- silicon carbide
- diffusion furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
- C04B41/5096—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1491118 Muffle furnaces NORTON CO 31 Oct 1975 [6 Dec 1974] 45521/75 Heading F4B [Also in Divisions C7 and H1] The process tube 28, paddle 30 and boat 16 of a semi-conductor diffusion furnace are each composed of a matrix of sintered silicon carbide which is made impervious to gases by impregnation with silicon metal having a purity of at least 99% silicon, preferably 99À9%. The component parts of the furnace may be formed by slip moulding silicon carbide into a green shape which is sintered at 2250 C.; the sintered shape thereafter being partially or wholly impregnated with silicon at a temperature of about 2150 C. Alternatively the shaped green component may be subjected directly to siliconizing, the silicon carbide particles being sintered and the matrix being impregnated all in one step. Silicon wafers 34 are held in slots 18 in the boat 16. Wheels (6, Fig. 2, not shown) are provided at one end of the paddle 30. The process tube 28 has a necked down end (2, Fig. 1, not shown) which terminates in a ball joint 4 for connection to a source of gas or vacuum.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/530,083 US3951587A (en) | 1974-12-06 | 1974-12-06 | Silicon carbide diffusion furnace components |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1491118A true GB1491118A (en) | 1977-11-09 |
Family
ID=24112384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB45521/75A Expired GB1491118A (en) | 1974-12-06 | 1975-10-31 | Semi-conductor diffusion furnace components |
Country Status (5)
Country | Link |
---|---|
US (1) | US3951587A (en) |
JP (1) | JPS5410825B2 (en) |
DE (1) | DE2553651C3 (en) |
FR (1) | FR2293793A1 (en) |
GB (1) | GB1491118A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2148270A (en) * | 1983-10-22 | 1985-05-30 | British Ceramic Res Ass | Cermet materials |
GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS512161U (en) * | 1974-06-24 | 1976-01-09 | ||
JPS5818349B2 (en) * | 1975-06-25 | 1983-04-12 | ノ−トン カンパニ− | Gas-impermeable hollow silicon carbide molded product and its manufacturing method |
JPS5222477A (en) * | 1975-08-13 | 1977-02-19 | Toshiba Ceramics Co Ltd | Sic-si type equalizing tube for manufacturing gas impermeable semi conductors |
US4075972A (en) * | 1975-08-20 | 1978-02-28 | Nippondenso Co., Ltd. | Apparatus for thermal diffusion of semiconductor devices |
JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
US4150998A (en) * | 1976-12-09 | 1979-04-24 | General Electric Company | Rotary sealant abradable material and method for making |
JPS53114670A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Ceramics Co | Jig for diffusion furnace |
JPS53142183A (en) * | 1977-05-18 | 1978-12-11 | Toshiba Ceramics Co | Silicon wafer jig |
JPS53148283A (en) * | 1977-05-30 | 1978-12-23 | Toshiba Ceramics Co | Silicon wafer jig |
US4195871A (en) * | 1978-06-12 | 1980-04-01 | Codi Corporation | Diffusion boat and grip |
DE2852410C2 (en) * | 1978-12-04 | 1981-12-03 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Process and device for the production of silicon carbide molded bodies |
US4218214A (en) * | 1979-02-05 | 1980-08-19 | Rca Corporation | Guide wing for a furnace paddle |
US4294788A (en) * | 1979-12-05 | 1981-10-13 | General Electric Company | Method of making a shaped silicon carbide-silicon matrix composite and articles made thereby |
US4240835A (en) * | 1979-12-05 | 1980-12-23 | General Electric Company | Method of making a shaped silicon carbide-silicon matrix composite and articles made thereby |
US4543064A (en) * | 1980-04-14 | 1985-09-24 | Wolf Ehrenfried G B | Dental bridge |
JPS56150824A (en) * | 1980-04-24 | 1981-11-21 | Toshiba Ceramics Co Ltd | Silicon carbide core tube for semiconductor diffusion furnace |
CA1158259A (en) * | 1980-07-17 | 1983-12-06 | Francis J. Frechette | Composite material of silicon carbide and silicon and methods of producing |
JPS5946491A (en) * | 1982-09-10 | 1984-03-15 | Toshiba Ceramics Co Ltd | Heat exchanger of silicon carbide |
US4507544A (en) * | 1982-09-29 | 1985-03-26 | Reliability, Inc. | Burn-in clock monitor |
DE3338755A1 (en) * | 1982-10-28 | 1984-05-03 | Toshiba Ceramics Co., Ltd., Tokio/Topkyo | SHAPED BODY BASED ON SILICON CARBIDE FOR USE IN SEMICONDUCTOR PRODUCTION |
JPS59200432A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Ceramics Co Ltd | Tool for carrying wafer boat |
US4459104A (en) * | 1983-06-01 | 1984-07-10 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4525429A (en) * | 1983-06-08 | 1985-06-25 | Kennecott Corporation | Porous semiconductor dopant carriers |
US4518349A (en) * | 1983-12-01 | 1985-05-21 | Better Semiconductor Processes (Bsp) | Cantilevered boat-free semiconductor wafer handling system |
JPS60138915A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | Furnace core tube of silicon carbide |
JPS60138913A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | Manufacture of semiconductor diffusion furnace tube |
US5118647A (en) * | 1984-03-16 | 1992-06-02 | Lanxide Technology Company, Lp | Ceramic materials |
US5306677A (en) * | 1984-03-16 | 1994-04-26 | Lanxide Technology Company, Lp | Ceramic materials |
JPS60246264A (en) * | 1984-05-23 | 1985-12-05 | 東芝セラミツクス株式会社 | Manufacture of silicon carbide material |
DE3419866C2 (en) * | 1984-05-28 | 1986-06-26 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Carrier tray made of quartz glass for disk-shaped substrates |
USRE33361E (en) * | 1984-06-07 | 1990-10-02 | Substrate and media carrier | |
JPH0736381B2 (en) * | 1985-03-19 | 1995-04-19 | イビデン株式会社 | Heat resistant jig and its manufacturing method |
JPS60258918A (en) * | 1985-03-20 | 1985-12-20 | Toshiba Ceramics Co Ltd | Manufacture of sic-si heat equalizing tube for manufacturing gas impermeable semiconductor |
US4771021A (en) * | 1985-07-01 | 1988-09-13 | Teruyasu Tamamizu | Semi-conductor diffusion furnace components |
JPS6212666A (en) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | Manufacture of oven core pipe for semiconductor |
JPS6212667A (en) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | Manufacture of member for semiconductor |
JP2573480B2 (en) * | 1985-11-22 | 1997-01-22 | 東芝セラミックス 株式会社 | Jig for semiconductor heat treatment |
US4676008A (en) * | 1986-05-16 | 1987-06-30 | Microglass, Inc. | Cage-type wafer carrier and method |
JPH0521297Y2 (en) * | 1986-07-31 | 1993-06-01 | ||
JPH0770494B2 (en) * | 1986-10-15 | 1995-07-31 | 東海高熱工業株式会社 | Wafer boat manufacturing method for semiconductor manufacturing |
US5071685A (en) * | 1986-11-07 | 1991-12-10 | Kasprzyk Martin R | Ceramic articles, methods and apparatus for their manufacture |
US4789506A (en) * | 1986-11-07 | 1988-12-06 | Gas Research Institute | Method of producing tubular ceramic articles |
JPH07120633B2 (en) * | 1987-03-17 | 1995-12-20 | 富士通株式会社 | Method for manufacturing jig for semiconductor |
US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon | |
US4785936A (en) * | 1987-05-13 | 1988-11-22 | David Shpigelman | Device for holding flat objects such as printed circuit boards |
JP2620765B2 (en) * | 1987-09-07 | 1997-06-18 | 東芝セラミックス株式会社 | Vertical diffusion furnace boat |
JPH0768066B2 (en) * | 1987-12-25 | 1995-07-26 | イビデン株式会社 | Heat resistant composite and method for producing the same |
US4998879A (en) * | 1988-04-29 | 1991-03-12 | Norton Company | High purity diffusion furnace components |
US4999228A (en) * | 1988-05-06 | 1991-03-12 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide diffusion tube for semi-conductor |
US5046615A (en) * | 1989-04-03 | 1991-09-10 | Fluoroware, Inc. | Disk shipper |
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US5054418A (en) * | 1989-05-23 | 1991-10-08 | Union Oil Company Of California | Cage boat having removable slats |
JP2573526B2 (en) * | 1989-10-26 | 1997-01-22 | 東芝セラミックス株式会社 | Method of manufacturing jig for transporting semiconductor wafer |
GB9010833D0 (en) * | 1990-05-15 | 1990-07-04 | Electrotech Research Limited | Workpiece support |
WO1993025495A1 (en) * | 1992-06-12 | 1993-12-23 | The Carborundum Company | Porous silicon carbide |
US5417803A (en) * | 1993-09-29 | 1995-05-23 | Intel Corporation | Method for making Si/SiC composite material |
US5526984A (en) * | 1994-07-18 | 1996-06-18 | Saint-Gobain/Norton Industrial Ceramics Corp. | Hydrogen torch having concentric tubes and reverse ball joint connection |
US5538230A (en) * | 1994-08-08 | 1996-07-23 | Sibley; Thomas | Silicon carbide carrier for wafer processing |
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US5443649A (en) * | 1994-11-22 | 1995-08-22 | Sibley; Thomas | Silicon carbide carrier for wafer processing in vertical furnaces |
US5882807A (en) | 1995-12-26 | 1999-03-16 | Asahi Glass Company, Ltd | Jig for heat treatment and process for fabricating the jig |
US5702997A (en) * | 1996-10-04 | 1997-12-30 | Saint-Gobain/Norton Industrial Ceramics Corp. | Process for making crack-free silicon carbide diffusion components |
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US6180258B1 (en) * | 1997-06-04 | 2001-01-30 | Chesapeake Composites Corporation | Metal-matrix composites and method for making such composites |
JP4355375B2 (en) * | 1997-06-18 | 2009-10-28 | 日本碍子株式会社 | High electrical resistance and high thermal conductivity recrystallized SiC sintered body and method for producing the same |
US6056123A (en) * | 1997-12-10 | 2000-05-02 | Novus Corporation | Semiconductor wafer carrier having the same composition as the wafers |
US6162543A (en) | 1998-12-11 | 2000-12-19 | Saint-Gobain Industrial Ceramics, Inc. | High purity siliconized silicon carbide having high thermal shock resistance |
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US6395203B1 (en) | 1999-08-30 | 2002-05-28 | General Electric Company | Process for producing low impurity level ceramic |
US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
WO2001027345A1 (en) * | 1999-10-13 | 2001-04-19 | Asahi Glass Company, Limited | Sputtering target and method for preparing the same and film-forming method |
US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
US7104177B1 (en) | 2000-01-11 | 2006-09-12 | Aghajanian Michael K | Ceramic-rich composite armor, and methods for making same |
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US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US20020130061A1 (en) * | 2000-11-02 | 2002-09-19 | Hengst Richard R. | Apparatus and method of making a slip free wafer boat |
US20040173948A1 (en) * | 2002-09-19 | 2004-09-09 | Pandelisev Kiril A. | Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication |
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US7727919B2 (en) * | 2007-10-29 | 2010-06-01 | Saint-Gobain Ceramics & Plastics, Inc. | High resistivity silicon carbide |
KR20100101640A (en) * | 2007-12-20 | 2010-09-17 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Method for treating semiconductor processing components and components formed thereby |
MY152285A (en) * | 2008-02-21 | 2014-09-15 | Saint Gobain Ceramics | Ceramic paddle |
TW201129719A (en) * | 2009-10-20 | 2011-09-01 | Saint Gobain Ceramics | Microelectronic processing component having corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer |
US9676631B2 (en) | 2014-07-21 | 2017-06-13 | Lori Bracamonte | Reaction bonded silicon carbide bodies made from high purity carbonaceous preforms |
JP6906343B2 (en) | 2017-03-30 | 2021-07-21 | 日本碍子株式会社 | Method for manufacturing silicon carbide sintered body |
DE102017217321A1 (en) * | 2017-09-28 | 2019-03-28 | Sgl Carbon Se | Ceramic component |
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FR1063359A (en) * | 1951-12-21 | 1954-05-03 | Siemens Planiawerke Ag Fu R Ko | Process for the silicon impregnation of silicon carbide bodies, in particular of the ends of heating rods, device for the application of said process and products obtained by said process |
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DE2037173A1 (en) * | 1970-07-27 | 1972-02-03 | Siemens Ag | Arrangement for diffusing dopants into slices made of semiconductor material |
US3859399A (en) * | 1971-04-19 | 1975-01-07 | Carborundum Co | Dense composite ceramic bodies and method for their production |
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DE2253410C3 (en) * | 1972-10-31 | 1979-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of tubes for diffusion processes in semiconductor technology |
JPS5420670Y2 (en) * | 1973-01-26 | 1979-07-25 | ||
DE2322952C3 (en) * | 1973-05-07 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of trays for holding crystal disks in diffusion and tempering processes |
-
1974
- 1974-12-06 US US05/530,083 patent/US3951587A/en not_active Expired - Lifetime
-
1975
- 1975-10-31 GB GB45521/75A patent/GB1491118A/en not_active Expired
- 1975-11-28 DE DE2553651A patent/DE2553651C3/en not_active Expired
- 1975-12-03 FR FR7536974A patent/FR2293793A1/en active Granted
- 1975-12-04 JP JP14585975A patent/JPS5410825B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2148270A (en) * | 1983-10-22 | 1985-05-30 | British Ceramic Res Ass | Cermet materials |
GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
Also Published As
Publication number | Publication date |
---|---|
DE2553651B2 (en) | 1980-09-18 |
DE2553651A1 (en) | 1976-06-10 |
JPS5185374A (en) | 1976-07-26 |
US3951587A (en) | 1976-04-20 |
FR2293793B1 (en) | 1980-01-04 |
JPS5410825B2 (en) | 1979-05-10 |
DE2553651C3 (en) | 1981-09-03 |
FR2293793A1 (en) | 1976-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19951030 |