GB1384935A - Ion implanted resistor and method - Google Patents
Ion implanted resistor and methodInfo
- Publication number
- GB1384935A GB1384935A GB4846772A GB4846772A GB1384935A GB 1384935 A GB1384935 A GB 1384935A GB 4846772 A GB4846772 A GB 4846772A GB 4846772 A GB4846772 A GB 4846772A GB 1384935 A GB1384935 A GB 1384935A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- boron
- ions
- oxide
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 3
- -1 boron ions Chemical class 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1384935 Integrated circuit resistors CORNING GLASS WORKS and SIGNETICS CORP 20 Oct 1972 [1 Nov 1971] 48467/72 Heading H1K An ion implanted resistor is formed on a silicon substrate by boron ions at various energies, bombarding the substrate, through an oxide layer shield, and subsequently heat annealing. The value of the specific resistance so produced is controlled by ion energy, the oxide layer thickness, and the time and temperature of the annealing process, and its temperature stability is a maximum 3% over the range - 55‹ to + 125‹ C. and 0À3% over the range 0‹ to 70‹ C. The resistor-is fabricated on a silicon body 11 of N-type conductivity, whereon an oxide masking layer 13, which is relatively thick (e.g. 1 micrometer), is formed. Openings 14 are formed and a P-type impurity, e.g. boron is diffused into the body 11 to form dish-shaped P-N junction contact regions 16, there being some oxide regrowth at 13a. Layer 19 is formed to a precise predetermined thickness (e.g. 1300 Šngstroms). Ion implantation is used to introduce P-type impurity ions, e.g. boron, into the body 11 by accelerating the ions in a vacuum to an energy of 25 to 150 keV to provide 10<14> to 5 x 10<15> boron ions per sq. cm. of semi-conductor. Implantation regions 21 are thereby formed. The structure as in Fig. 4 is then annealed in a nitrogen atmosphere at 500‹ to 700‹ C., the time and actual temperature of which is chosen to suit the resistance value and tolerance, which parameters are further influenced by the ion implantation energy, and layer thickness 19. Graphs are included to show the effect of all these factors under different experimental conditions. The final process is as Fig. 5, where openings 26 are etched above contact regions 16, and. metal leads 27 are deposited by photolithographic means. When the annealing temperature is above 575‹ C. a refractory metal is used, and below this temperature aluminium may be used.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00194366A US3829890A (en) | 1971-11-01 | 1971-11-01 | Ion implanted resistor and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1384935A true GB1384935A (en) | 1975-02-26 |
Family
ID=22717312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4846772A Expired GB1384935A (en) | 1971-11-01 | 1972-10-20 | Ion implanted resistor and method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3829890A (en) |
| JP (1) | JPS49132984A (en) |
| DE (1) | DE2253683A1 (en) |
| FR (1) | FR2165865B1 (en) |
| GB (1) | GB1384935A (en) |
| IT (1) | IT970101B (en) |
| NL (1) | NL7214669A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| JPS51103780A (en) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | HANDOTAISOSHI |
| JPS5240986A (en) * | 1975-09-27 | 1977-03-30 | Toshiba Corp | Process for production of semiconductor element |
| DE2755418A1 (en) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT |
| IT1214621B (en) * | 1985-07-04 | 1990-01-18 | Ates Componenti Elettron | PROCEDURE FOR REALIZING A HIGH OHMIC VALUE AND MINIMUM DIMENSION IMPLANTED IN A SEMICONDUCTOR BODY, AND RESISTANCE OBTAINED. |
| US6709943B2 (en) * | 2002-08-26 | 2004-03-23 | Winbond Electronics Corporation | Method of forming semiconductor diffused resistors with optimized temperature dependence |
| KR100887884B1 (en) * | 2007-10-01 | 2009-03-06 | 주식회사 동부하이텍 | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3683306A (en) * | 1968-11-19 | 1972-08-08 | Philips Corp | Temperature compensated semiconductor resistor containing neutral inactive impurities |
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
-
1971
- 1971-11-01 US US00194366A patent/US3829890A/en not_active Expired - Lifetime
-
1972
- 1972-10-20 GB GB4846772A patent/GB1384935A/en not_active Expired
- 1972-10-30 NL NL7214669A patent/NL7214669A/xx not_active Application Discontinuation
- 1972-10-31 IT IT31156/72A patent/IT970101B/en active
- 1972-10-31 FR FR7238633A patent/FR2165865B1/fr not_active Expired
- 1972-10-31 JP JP47109385A patent/JPS49132984A/ja active Pending
- 1972-11-02 DE DE2253683A patent/DE2253683A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT970101B (en) | 1974-04-10 |
| FR2165865B1 (en) | 1977-05-20 |
| NL7214669A (en) | 1973-05-03 |
| JPS49132984A (en) | 1974-12-20 |
| US3829890A (en) | 1974-08-13 |
| DE2253683A1 (en) | 1973-05-24 |
| FR2165865A1 (en) | 1973-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |