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FR3039025B1 - Procede de soudure avec apport de matiere et module electronique de puissance realise par ce procede - Google Patents

Procede de soudure avec apport de matiere et module electronique de puissance realise par ce procede Download PDF

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Publication number
FR3039025B1
FR3039025B1 FR1556690A FR1556690A FR3039025B1 FR 3039025 B1 FR3039025 B1 FR 3039025B1 FR 1556690 A FR1556690 A FR 1556690A FR 1556690 A FR1556690 A FR 1556690A FR 3039025 B1 FR3039025 B1 FR 3039025B1
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France
Prior art keywords
power module
welding process
material supply
electronic power
module made
Prior art date
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Application number
FR1556690A
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English (en)
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FR3039025A1 (fr
Inventor
Ky Lim Tan
Jean-Michel Morelle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo Equipements Electriques Moteur SAS
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Valeo Equipements Electriques Moteur SAS
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Application filed by Valeo Equipements Electriques Moteur SAS filed Critical Valeo Equipements Electriques Moteur SAS
Priority to FR1556690A priority Critical patent/FR3039025B1/fr
Priority to EP16750967.8A priority patent/EP3323144A1/fr
Priority to PCT/FR2016/051833 priority patent/WO2017009586A1/fr
Publication of FR3039025A1 publication Critical patent/FR3039025A1/fr
Application granted granted Critical
Publication of FR3039025B1 publication Critical patent/FR3039025B1/fr
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    • H01L2224/832—Applying energy for connecting
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    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83439—Silver [Ag] as principal constituent
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444—Gold [Au] as principal constituent
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
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    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
FR1556690A 2015-07-16 2015-07-16 Procede de soudure avec apport de matiere et module electronique de puissance realise par ce procede Active FR3039025B1 (fr)

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FR1556690A FR3039025B1 (fr) 2015-07-16 2015-07-16 Procede de soudure avec apport de matiere et module electronique de puissance realise par ce procede
EP16750967.8A EP3323144A1 (fr) 2015-07-16 2016-07-18 Procede de brasage par frittage d'une poudre conductrice par thermo-compression ultrasonique et module electronique de puissance realise par ce procede
PCT/FR2016/051833 WO2017009586A1 (fr) 2015-07-16 2016-07-18 Procede de brasage par frittage d'une poudre conductrice par thermo-compression ultrasonique et module electronique de puissance realise par ce procede

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