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FR2804247B1 - Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes - Google Patents

Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes

Info

Publication number
FR2804247B1
FR2804247B1 FR0000791A FR0000791A FR2804247B1 FR 2804247 B1 FR2804247 B1 FR 2804247B1 FR 0000791 A FR0000791 A FR 0000791A FR 0000791 A FR0000791 A FR 0000791A FR 2804247 B1 FR2804247 B1 FR 2804247B1
Authority
FR
France
Prior art keywords
self
producing
bipolar transistor
extrinsic base
aligned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0000791A
Other languages
English (en)
Other versions
FR2804247A1 (fr
Inventor
Michel Marty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0000791A priority Critical patent/FR2804247B1/fr
Priority to US09/766,454 priority patent/US6465317B2/en
Publication of FR2804247A1 publication Critical patent/FR2804247A1/fr
Application granted granted Critical
Publication of FR2804247B1 publication Critical patent/FR2804247B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR0000791A 2000-01-21 2000-01-21 Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes Expired - Fee Related FR2804247B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0000791A FR2804247B1 (fr) 2000-01-21 2000-01-21 Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes
US09/766,454 US6465317B2 (en) 2000-01-21 2001-01-19 Process for producing a bipolar transistor with self-aligned emitter and extrinsic base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0000791A FR2804247B1 (fr) 2000-01-21 2000-01-21 Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes

Publications (2)

Publication Number Publication Date
FR2804247A1 FR2804247A1 (fr) 2001-07-27
FR2804247B1 true FR2804247B1 (fr) 2002-04-12

Family

ID=8846175

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0000791A Expired - Fee Related FR2804247B1 (fr) 2000-01-21 2000-01-21 Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes

Country Status (2)

Country Link
US (1) US6465317B2 (fr)
FR (1) FR2804247B1 (fr)

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US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6155909A (en) 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6784467B1 (en) 2002-08-13 2004-08-31 Newport Fab, Llc Method for fabricating a self-aligned bipolar transistor and related structure
US6617220B2 (en) * 2001-03-16 2003-09-09 International Business Machines Corporation Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base
US6534371B2 (en) * 2001-06-11 2003-03-18 International Business Machines Corporation C implants for improved SiGe bipolar yield
US6764907B2 (en) * 2002-02-19 2004-07-20 Bart J. Van Zeghbroeck Method of fabricating self-aligned silicon carbide semiconductor devices
US6541336B1 (en) * 2002-05-15 2003-04-01 International Business Machines Corporation Method of fabricating a bipolar transistor having a realigned emitter
US6683366B1 (en) * 2002-06-04 2004-01-27 Newport Fab, Llc Bipolar transistor and related structure
GB2409340B (en) 2002-10-04 2006-05-10 Silicon Genesis Corp Method for treating semiconductor material
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
EP1435647A1 (fr) * 2002-12-30 2004-07-07 STMicroelectronics S.r.l. Procédé de fabrication de structures auto-alignées sur substrat semi-conducteur
FR2856843A1 (fr) * 2003-06-25 2004-12-31 St Microelectronics Sa Procede de protection d'un element d'un circuit integre contre la formation d'un siliciure de metal
JP4711827B2 (ja) * 2003-07-11 2011-06-29 パナソニック株式会社 ヘテロバイポーラトランジスタおよびその製造方法
FR2858877B1 (fr) * 2003-08-11 2005-10-21 St Microelectronics Sa Transistor bipolaire a heterojonction
US7022578B2 (en) * 2003-10-09 2006-04-04 Chartered Semiconductor Manufacturing Ltd. Heterojunction bipolar transistor using reverse emitter window
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
DE102004017166B4 (de) * 2004-04-01 2007-10-11 Atmel Germany Gmbh Verfahren zur Herstellung von Bipolar-Transistoren
US7390724B2 (en) * 2004-04-12 2008-06-24 Silicon Genesis Corporation Method and system for lattice space engineering
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
DE102004021241A1 (de) * 2004-04-30 2005-11-17 Infineon Technologies Ag Verfahren zur Herstellung eines planaren Spacers, eines zugehörigen Bipolartransistors und einer zugehörigen BiCMOS-Schaltungsanordnung
US7329941B2 (en) * 2004-07-20 2008-02-12 International Business Machines Corporation Creating increased mobility in a bipolar device
US7094666B2 (en) * 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
US7102205B2 (en) * 2004-09-01 2006-09-05 International Business Machines Corporation Bipolar transistor with extrinsic stress layer
DE102004053393B4 (de) * 2004-11-05 2007-01-11 Atmel Germany Gmbh Verfahren zur Herstellung einer vertikal integrierten Kaskodenstruktur und vertikal integrierte Kaskodenstruktur
DE102004053394B4 (de) * 2004-11-05 2010-08-19 Atmel Automotive Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
US8299500B2 (en) 2005-08-23 2012-10-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
US8298901B1 (en) * 2006-05-26 2012-10-30 National Semiconductor Corporation Method for manufacturing bipolar transistors
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7709338B2 (en) * 2006-12-21 2010-05-04 International Business Machines Corporation BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
US7846806B1 (en) * 2007-05-25 2010-12-07 National Semiconductor Corporation System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture
US8148242B2 (en) * 2008-02-20 2012-04-03 Soitec Oxidation after oxide dissolution
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US20120313146A1 (en) 2011-06-08 2012-12-13 International Business Machines Corporation Transistor and method of forming the transistor so as to have reduced base resistance
US20240145585A1 (en) * 2022-11-01 2024-05-02 Globalfoundries U.S. Inc. Heterojunction bipolar transistor with amorphous semiconductor regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270270A (ja) * 1988-04-21 1989-10-27 Toshiba Corp 半導体装置の製造方法
DE68918818T2 (de) * 1988-12-13 1995-02-09 Fujitsu Ltd Verfahren zur Herstellung von Halbleiterbauelementen durch selektives, U.V.-unterstütztes Aetzen von Mehrschichten.
EP0387010A3 (fr) * 1989-03-08 1990-10-10 Matsushita Electric Industrial Co., Ltd. Transistor bipolaire à hétérojonction
EP0436753B1 (fr) * 1990-01-08 1994-05-25 Siemens Aktiengesellschaft Méthode de fabrication d'un complexe base-émetteur auto-aligné
US5204277A (en) * 1992-02-03 1993-04-20 Motorola, Inc. Method of forming bipolar transistor having substrate to polysilicon extrinsic base contact
JPH0897229A (ja) * 1994-09-28 1996-04-12 Fujitsu Ltd 半導体装置の製造方法
FR2779572B1 (fr) * 1998-06-05 2003-10-17 St Microelectronics Sa Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant

Also Published As

Publication number Publication date
US20010039095A1 (en) 2001-11-08
US6465317B2 (en) 2002-10-15
FR2804247A1 (fr) 2001-07-27

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Legal Events

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ST Notification of lapse