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FR2771511B1 - Capteur de champ magnetique et procede de fabrication de ce capteur - Google Patents

Capteur de champ magnetique et procede de fabrication de ce capteur

Info

Publication number
FR2771511B1
FR2771511B1 FR9714764A FR9714764A FR2771511B1 FR 2771511 B1 FR2771511 B1 FR 2771511B1 FR 9714764 A FR9714764 A FR 9714764A FR 9714764 A FR9714764 A FR 9714764A FR 2771511 B1 FR2771511 B1 FR 2771511B1
Authority
FR
France
Prior art keywords
manufacturing
magnetic field
field sensor
sensor
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9714764A
Other languages
English (en)
Other versions
FR2771511A1 (fr
Inventor
Albert Fert
Frederic Petroff
Luiz Schelp
Alain Schuhl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9714764A priority Critical patent/FR2771511B1/fr
Priority to EP98955734A priority patent/EP0954754A1/fr
Priority to US09/341,694 priority patent/US6291993B1/en
Priority to PCT/FR1998/002514 priority patent/WO1999027379A1/fr
Publication of FR2771511A1 publication Critical patent/FR2771511A1/fr
Application granted granted Critical
Publication of FR2771511B1 publication Critical patent/FR2771511B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
FR9714764A 1997-11-25 1997-11-25 Capteur de champ magnetique et procede de fabrication de ce capteur Expired - Fee Related FR2771511B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9714764A FR2771511B1 (fr) 1997-11-25 1997-11-25 Capteur de champ magnetique et procede de fabrication de ce capteur
EP98955734A EP0954754A1 (fr) 1997-11-25 1998-11-24 Capteur de champ magnetique et procede de fabrication de ce capteur
US09/341,694 US6291993B1 (en) 1997-11-25 1998-11-24 Magnetic field sensor and method for making same
PCT/FR1998/002514 WO1999027379A1 (fr) 1997-11-25 1998-11-24 Capteur de champ magnetique et procede de fabrication de ce capteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9714764A FR2771511B1 (fr) 1997-11-25 1997-11-25 Capteur de champ magnetique et procede de fabrication de ce capteur

Publications (2)

Publication Number Publication Date
FR2771511A1 FR2771511A1 (fr) 1999-05-28
FR2771511B1 true FR2771511B1 (fr) 2000-02-04

Family

ID=9513743

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9714764A Expired - Fee Related FR2771511B1 (fr) 1997-11-25 1997-11-25 Capteur de champ magnetique et procede de fabrication de ce capteur

Country Status (4)

Country Link
US (1) US6291993B1 (fr)
EP (1) EP0954754A1 (fr)
FR (1) FR2771511B1 (fr)
WO (1) WO1999027379A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19908054C2 (de) * 1999-02-25 2001-06-28 Forschungszentrum Juelich Gmbh Ungekoppelter GMR-Sensor
JP2002040117A (ja) * 2000-07-21 2002-02-06 Delta Tooling Co Ltd 面状磁気センサ及び多次元磁場解析用面状磁気センサ
FR2817077B1 (fr) 2000-11-17 2003-03-07 Thomson Csf Capacite variable commandable en tension par utilisation du phenomene de "blocage de coulomb"
KR100886602B1 (ko) * 2001-05-31 2009-03-05 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 터널자기저항소자
US6735060B2 (en) * 2001-06-20 2004-05-11 International Business Machines Corporation Spin valve sensor with a metal and metal oxide cap layer structure
FR2828001B1 (fr) * 2001-07-27 2003-10-10 Thales Sa Dispositif de commande de renversement de sens d'aimantation sans champ magnetique externe
CA2515354C (fr) 2003-02-18 2013-08-06 Nokia Corporation Methode de mise en tampon de donnees mediatiques dans des systemes dont l'ordre de decodage est different de l'ordre de transmission
MY136056A (en) 2003-02-18 2008-08-29 Nokia Corp Picture decoding method
US9124907B2 (en) 2004-10-04 2015-09-01 Nokia Technologies Oy Picture buffering method
FR2879349B1 (fr) * 2004-12-15 2007-05-11 Thales Sa Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin
US8519495B2 (en) * 2009-02-17 2013-08-27 Seagate Technology Llc Single line MRAM
US9121887B2 (en) * 2009-02-26 2015-09-01 Regents Of The University Of Minnesota High magnetic moment particle detection
RU2464586C2 (ru) * 2010-02-04 2012-10-20 Открытое акционерное общество "ОКБ-Планета" (ОАО "ОКБ-Планета") Пассивный датчик переменного магнитного поля
FR2966636B1 (fr) * 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
CN103794224B (zh) * 2014-01-27 2017-01-11 华中科技大学 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2685489B1 (fr) 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
US5585196A (en) * 1993-03-12 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect element
FR2702919B1 (fr) * 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
TW265440B (fr) * 1993-04-30 1995-12-11 Ibm
FR2714478B1 (fr) 1993-12-23 1996-01-26 Thomson Csf Détecteur de champ magnétique en couches minces.
US5644455A (en) * 1993-12-30 1997-07-01 Seagate Technology, Inc. Amorphous diamond-like carbon gaps in magnetoresistive heads
JP2901501B2 (ja) * 1994-08-29 1999-06-07 ティーディーケイ株式会社 磁性多層膜およびその製造方法ならびに磁気抵抗効果素子
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
FR2734058B1 (fr) 1995-05-12 1997-06-20 Thomson Csf Amperemetre
JPH09199326A (ja) * 1996-01-18 1997-07-31 Fujitsu Ltd 磁気抵抗効果膜及びその製造方法

Also Published As

Publication number Publication date
WO1999027379A1 (fr) 1999-06-03
EP0954754A1 (fr) 1999-11-10
US6291993B1 (en) 2001-09-18
FR2771511A1 (fr) 1999-05-28

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse

Effective date: 20070731