Nothing Special   »   [go: up one dir, main page]

FR2106413B1 - - Google Patents

Info

Publication number
FR2106413B1
FR2106413B1 FR7131855A FR7131855A FR2106413B1 FR 2106413 B1 FR2106413 B1 FR 2106413B1 FR 7131855 A FR7131855 A FR 7131855A FR 7131855 A FR7131855 A FR 7131855A FR 2106413 B1 FR2106413 B1 FR 2106413B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7131855A
Other versions
FR2106413A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2106413A1 publication Critical patent/FR2106413A1/fr
Application granted granted Critical
Publication of FR2106413B1 publication Critical patent/FR2106413B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/139Schottky barrier
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7131855A 1970-09-10 1971-09-03 Expired FR2106413B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702044863 DE2044863A1 (de) 1970-09-10 1970-09-10 Verfahren zur Herstellung von Schottkydioden

Publications (2)

Publication Number Publication Date
FR2106413A1 FR2106413A1 (fr) 1972-05-05
FR2106413B1 true FR2106413B1 (fr) 1977-03-18

Family

ID=5782110

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7131855A Expired FR2106413B1 (fr) 1970-09-10 1971-09-03

Country Status (5)

Country Link
US (1) US3846192A (fr)
DE (1) DE2044863A1 (fr)
FR (1) FR2106413B1 (fr)
GB (1) GB1303235A (fr)
NL (1) NL7110895A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4202006A (en) * 1978-02-15 1980-05-06 Rca Corporation Semiconductor integrated circuit device
JPS5669844A (en) * 1979-11-10 1981-06-11 Toshiba Corp Manufacture of semiconductor device
FR2472268A1 (fr) * 1979-12-21 1981-06-26 Thomson Csf Procede de formation de caisson dans des circuits integres
US4260431A (en) * 1979-12-21 1981-04-07 Harris Corporation Method of making Schottky barrier diode by ion implantation and impurity diffusion
US4281448A (en) * 1980-04-14 1981-08-04 Gte Laboratories Incorporated Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
JP3779366B2 (ja) * 1996-02-21 2006-05-24 株式会社東芝 半導体装置及びその製造方法
DE69834096T2 (de) * 1997-09-03 2007-01-04 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer halbleiteranordnung mit schottky-übergang
US7064416B2 (en) * 2001-11-16 2006-06-20 International Business Machines Corporation Semiconductor device and method having multiple subcollectors formed on a common wafer
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle

Also Published As

Publication number Publication date
US3846192A (en) 1974-11-05
NL7110895A (fr) 1972-03-14
GB1303235A (fr) 1973-01-17
DE2044863A1 (de) 1972-03-23
FR2106413A1 (fr) 1972-05-05

Similar Documents

Publication Publication Date Title
ATA96471A (fr)
AU2044470A (fr)
AU1146470A (fr)
AU1473870A (fr)
AU2130570A (fr)
AU2085370A (fr)
AU2017870A (fr)
AU1833270A (fr)
AU1716970A (fr)
AU1326870A (fr)
AU1517670A (fr)
AU1336970A (fr)
AR195465A1 (fr)
AU1591370A (fr)
AU1872870A (fr)
AU2144270A (fr)
AU2131570A (fr)
AU1328670A (fr)
AU1277070A (fr)
AU1343870A (fr)
AU1247570A (fr)
AU2130770A (fr)
AU1235770A (fr)
AU1581370A (fr)
AU1083170A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse