FR2011431A1 - - Google Patents
Info
- Publication number
- FR2011431A1 FR2011431A1 FR6920810A FR6920810A FR2011431A1 FR 2011431 A1 FR2011431 A1 FR 2011431A1 FR 6920810 A FR6920810 A FR 6920810A FR 6920810 A FR6920810 A FR 6920810A FR 2011431 A1 FR2011431 A1 FR 2011431A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6808722.A NL164703C (en) | 1968-06-21 | 1968-06-21 | SEMICONDUCTOR DEVICE, CONTAINING A CONTACT WITH AT LEAST TWO SECTIONS AND A COMMON SECTION FOR THESE SECTIONS, INCLUDING A SERIES OF THE SERIES ON EACH PART OF THE CONNECTION OF THE COMMUNITY SECTION. |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2011431A1 true FR2011431A1 (en) | 1970-02-27 |
Family
ID=19803953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6920810A Pending FR2011431A1 (en) | 1968-06-21 | 1969-06-20 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5513587B1 (en) |
AT (1) | AT320025B (en) |
BR (1) | BR6909999D0 (en) |
CH (1) | CH501998A (en) |
FR (1) | FR2011431A1 (en) |
GB (2) | GB1278442A (en) |
NL (1) | NL164703C (en) |
SE (1) | SE342113B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071161A2 (en) * | 1981-07-28 | 1983-02-09 | Fujitsu Limited | A transistor having the mesh emitter structure |
EP0141075A1 (en) * | 1983-08-12 | 1985-05-15 | Siemens Aktiengesellschaft | Power transistor |
FR2615326A1 (en) * | 1987-05-15 | 1988-11-18 | Fuji Electric Co Ltd | MULTI-TRANSMITTER-TYPE SEMICONDUCTOR DEVICE |
EP0439163A2 (en) * | 1990-01-25 | 1991-07-31 | Kabushiki Kaisha Toshiba | Semiconductor device having a high-frequency bipolar transistor |
US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7002117A (en) * | 1970-02-14 | 1971-08-17 | ||
US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
NL8403111A (en) * | 1984-10-12 | 1986-05-01 | Philips Nv | METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR WITH EMITTER SERIES, AND TRANSISTOR MANUFACTURED BY THE METHOD |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
JPH0320953U (en) * | 1989-07-11 | 1991-02-28 | ||
JP4949650B2 (en) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1358189A (en) * | 1962-10-04 | 1964-04-10 | Intermetall | Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one |
FR1475075A (en) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | High power semiconductor device |
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
GB1109211A (en) * | 1965-03-08 | 1968-04-10 | Int Standard Electric Corp | High power transistor assembly |
-
1968
- 1968-06-21 NL NL6808722.A patent/NL164703C/en not_active IP Right Cessation
-
1969
- 1969-06-18 AT AT576469A patent/AT320025B/en not_active IP Right Cessation
- 1969-06-18 CH CH930369A patent/CH501998A/en not_active IP Right Cessation
- 1969-06-18 SE SE8709/69A patent/SE342113B/xx unknown
- 1969-06-18 GB GB30846/69D patent/GB1278442A/en not_active Expired
- 1969-06-18 GB GB58687/71A patent/GB1278443A/en not_active Expired
- 1969-06-20 BR BR209999/69A patent/BR6909999D0/en unknown
- 1969-06-20 FR FR6920810A patent/FR2011431A1/fr active Pending
-
1975
- 1975-06-03 JP JP6697775A patent/JPS5513587B1/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1358189A (en) * | 1962-10-04 | 1964-04-10 | Intermetall | Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one |
GB1044469A (en) * | 1962-10-04 | 1966-09-28 | Intermetall Ges Fur Metallurg | Power transistor |
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
FR1475075A (en) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | High power semiconductor device |
GB1109211A (en) * | 1965-03-08 | 1968-04-10 | Int Standard Electric Corp | High power transistor assembly |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071161A2 (en) * | 1981-07-28 | 1983-02-09 | Fujitsu Limited | A transistor having the mesh emitter structure |
EP0071161A3 (en) * | 1981-07-28 | 1983-11-16 | Fujitsu Limited | A transistor having the mesh emitter structure |
EP0141075A1 (en) * | 1983-08-12 | 1985-05-15 | Siemens Aktiengesellschaft | Power transistor |
FR2615326A1 (en) * | 1987-05-15 | 1988-11-18 | Fuji Electric Co Ltd | MULTI-TRANSMITTER-TYPE SEMICONDUCTOR DEVICE |
US5053847A (en) * | 1987-05-15 | 1991-10-01 | Fuji Electric Co., Ltd. | Semiconductor device |
US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
EP0439163A2 (en) * | 1990-01-25 | 1991-07-31 | Kabushiki Kaisha Toshiba | Semiconductor device having a high-frequency bipolar transistor |
EP0439163A3 (en) * | 1990-01-25 | 1992-03-04 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
NL6808722A (en) | 1969-12-23 |
NL164703C (en) | 1981-01-15 |
AT320025B (en) | 1975-01-27 |
NL164703B (en) | 1980-08-15 |
GB1278442A (en) | 1972-06-21 |
CH501998A (en) | 1971-01-15 |
SE342113B (en) | 1972-01-24 |
DE1802899B2 (en) | 1975-04-24 |
DE1802899A1 (en) | 1970-02-26 |
BR6909999D0 (en) | 1973-01-02 |
GB1278443A (en) | 1972-06-21 |
JPS5513587B1 (en) | 1980-04-10 |