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FR1358189A - Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one - Google Patents

Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one

Info

Publication number
FR1358189A
FR1358189A FR936602A FR936602A FR1358189A FR 1358189 A FR1358189 A FR 1358189A FR 936602 A FR936602 A FR 936602A FR 936602 A FR936602 A FR 936602A FR 1358189 A FR1358189 A FR 1358189A
Authority
FR
France
Prior art keywords
emitter
conforming
previous
transistor
similar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR936602A
Other languages
French (fr)
Inventor
Dieter Gerstner
Rudolf Gothot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Application granted granted Critical
Publication of FR1358189A publication Critical patent/FR1358189A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR936602A 1962-10-04 1963-05-30 Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one Expired FR1358189A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ22459A DE1264615B (en) 1962-10-04 1962-10-04 Emitter connection of a power transistor

Publications (1)

Publication Number Publication Date
FR1358189A true FR1358189A (en) 1964-04-10

Family

ID=7200967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR936602A Expired FR1358189A (en) 1962-10-04 1963-05-30 Device for connecting the emitter of a power transistor and transistor provided with an emitter conforming or similar to the previous one

Country Status (4)

Country Link
DE (1) DE1264615B (en)
FR (1) FR1358189A (en)
GB (1) GB1044469A (en)
NL (1) NL296170A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
DE1514266A1 (en) * 1965-08-12 1969-08-07 Philips Nv Semiconductor device
DE1912931A1 (en) * 1968-04-04 1969-11-13 Fujitsu Ltd Semiconductor device
FR2011431A1 (en) * 1968-06-21 1970-02-27 Philips Nv
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
FR2019220A1 (en) * 1968-09-30 1970-06-26 Philips Nv
DE2105164A1 (en) * 1970-02-14 1971-09-02 Philips Nv Semiconductor device and method for its manufacture
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
NL165888C (en) * 1970-10-10 1981-05-15 Philips Nv SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING A COLLECTOR ZONE, A BASE ZONE AND AN EMITTER ZONE WITH THE EMITTER ZONE CONTAINING AT LEAST TWO STAPLED INTERMEDIATE AREAS, WHICH ARE ALREADY USED, SPREADING THE LITERALLY.
JPS5641186B2 (en) * 1972-03-03 1981-09-26
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
DE3346518C1 (en) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Field effect transistor with insulated gate electrode
JPS62229975A (en) * 1986-03-31 1987-10-08 Toshiba Corp power transistor
JP3942984B2 (en) * 2002-08-06 2007-07-11 株式会社ナノテコ Bipolar transistor, multi-finger bipolar transistor, epitaxial substrate for manufacturing bipolar transistor, and method for manufacturing bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1786107U (en) * 1956-09-25 1959-04-02 Siemens Ag POWER TRANSISTOR.
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
DE1514266A1 (en) * 1965-08-12 1969-08-07 Philips Nv Semiconductor device
DE1912931A1 (en) * 1968-04-04 1969-11-13 Fujitsu Ltd Semiconductor device
FR2011431A1 (en) * 1968-06-21 1970-02-27 Philips Nv
FR2019220A1 (en) * 1968-09-30 1970-06-26 Philips Nv
DE2105164A1 (en) * 1970-02-14 1971-09-02 Philips Nv Semiconductor device and method for its manufacture
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES

Also Published As

Publication number Publication date
GB1044469A (en) 1966-09-28
NL296170A (en)
DE1264615B (en) 1968-03-28

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