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EP1540762A1 - Junction between a microstrip line and a waveguide - Google Patents

Junction between a microstrip line and a waveguide

Info

Publication number
EP1540762A1
EP1540762A1 EP03798047A EP03798047A EP1540762A1 EP 1540762 A1 EP1540762 A1 EP 1540762A1 EP 03798047 A EP03798047 A EP 03798047A EP 03798047 A EP03798047 A EP 03798047A EP 1540762 A1 EP1540762 A1 EP 1540762A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
substrate
opening
microstrip line
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03798047A
Other languages
German (de)
French (fr)
Other versions
EP1540762B1 (en
Inventor
Thomas Johannes MÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Publication of EP1540762A1 publication Critical patent/EP1540762A1/en
Application granted granted Critical
Publication of EP1540762B1 publication Critical patent/EP1540762B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the invention relates to an arrangement according to claim 1.
  • Microstrip line-waveguide transitions are e.g. known from DE 197 41 944 A1 or US 6,265,950 B1.
  • the waveguide HL is attached to the underside of the substrate S with an end face.
  • the substrate S has an opening D in the region of the waveguide HL, which essentially corresponds to the cross section of the waveguide HL.
  • a coupling element (not shown), which projects into the opening D, is arranged on the microstrip line ML.
  • the opening D is on the top of the substrate S from a shield cap SK surrounded, which is electrically conductively connected by means of electrically conductive boreholes (via holes) VH to the metallization RM present on the underside of the substrate S.
  • This arrangement has the disadvantage that the printed circuit board must be mounted in a conductive manner on a pre-machined carrier plate containing the waveguide HL.
  • a precisely manufactured, mechanically precisely positioned and conductive shield cap SK is required.
  • the manufacture of this arrangement is time-consuming and costly due to the large number of different processing steps. Further disadvantages arise from the high space requirement due to the hollow conductor arranged outside the printed circuit board.
  • the arrangement according to the invention for a transition between a microstrip line and a waveguide comprises a microstrip line applied to the top side of a dielectric substrate, a waveguide applied to the top side of the substrate with an opening on at least one end face and a step-shaped structure implemented in the region of the opening on a side wall, which is conductively connected to the microstrip line in at least part and wherein a side wall of the waveguide is a metallized layer carried out on the substrate, a recess made in the metallized layer into which the microstrip line projects,
  • An advantage of the arrangement according to the invention is the simple and inexpensive production of the microstrip-waveguide transition. In contrast to the prior art, fewer components are required to implement the transition. A further advantage is that the implementation of the waveguide in the circuit board environment does not have to take place at the edge of the circuit card, as in US Pat. No. 6,265,950, but that it can take place anywhere on the circuit card. The arrangement according to the invention thus requires little space.
  • the waveguide is advantageously an SMD (surface mount device) component.
  • SMD surface mount device
  • the waveguide part is placed on the circuit board from above in a simple assembly step and connected in a conductive manner.
  • the connection of the waveguide to the transition can thus be integrated into known assembly processes. This saves manufacturing steps, which reduces manufacturing costs and time.
  • FIG. 1 shows a longitudinal section through an arrangement for a microstrip-waveguide transition according to the prior art
  • FIG. 2 shows a top view of the metallized layer on the top of the substrate
  • FIG. 3 shows a perspective view of an exemplary step-shaped inner structure of the SMD component
  • FIG. 4 shows a longitudinal section through an arrangement according to the invention for a microstrip-waveguide transition
  • FIG. 5 shows a first cross section through area 3 in FIG. 4
  • FIG. 6 shows a second cross section through area 4 in FIG. 4,
  • FIG. 8 shows a fourth cross section through area 6 in FIG. 4.
  • FIG. 9 shows a further advantageous embodiment of the microstrip-waveguide transition according to the invention.
  • the second shows a top view of the metallized layer of the substrate.
  • This metallized layer is also referred to as the state structure for the microstrip-waveguide transition.
  • the country structure LS has a recess A with an opening OZ.
  • the microstrip line ML which ends within the recess A, runs through this opening OZ.
  • the recess A is surrounded by vias, also referred to as via holes.
  • These plated-through holes VH are electrically conductive openings in the substrate which connect the country structure LS to the rear side metallization (not shown) on the back of the substrate.
  • the distance between the Via-Holes VH is so narrow that that the radiation of the electromagnetic wave through the gaps is low within the useful frequency range.
  • the via holes VH can advantageously also run in several rows arranged parallel to one another.
  • Component B also has an opening OB corresponding to the opening in the recess in the country structure (see FIG. 2).
  • a step-like structure ST1, ST is formed in the longitudinal direction of the component at a predeterminable distance from the opening OB on the side wall.
  • the side wall of component B containing the step structure ST1 and ST lies opposite the substrate surface after the assembly of the country structure LS (cf. FIG. 4).
  • the waveguide component B to be applied is opened downwards (in the direction of the substrate) before assembly and is therefore still incomplete.
  • the still missing side wall is formed by the country structure LS executed on the substrate.
  • the arrangement according to the invention is also not limited by the number of stages shown in FIG. 3 or FIG. 4.
  • the structure ST can be adapted to the respective requirements of the transition with regard to the number of steps, length and width of the individual steps. Of course, it is also possible to implement a continuous transition.
  • the step designated by the reference symbol ST1 has such a height that when the component B is positively attached to the land structure according to FIG. 2, the step ST1 rests directly on the microstrip line ML and thus an electrically conductive connection between the microstrip line ML and the component B.
  • Fig. 4 shows in longitudinal section an arrangement according to the invention of a microstrip-waveguide transition.
  • component B according to FIG. 3 is positively applied to the land structure of substrate S according to FIG. 3.
  • the component B is thereby in particular applied to the substrate in such a way that an electrically conductive connection is formed between the country structure and component B.
  • the substrate S has an essentially continuous metallic coating RM on the underside.
  • the waveguide region is identified in the illustration with the reference symbol HB.
  • the transition area is identified by the reference symbol ÜB.
  • microstrip-waveguide transition according to the invention works on the following principle:
  • the high-frequency signal outside the waveguide HL is passed through a microstrip line ML with the impedance Z 0 (area 1).
  • the high-frequency signal within the waveguide HL is carried in the form of the TE ⁇ 0 waveguide basic mode.
  • the transition ÜB converts the field image of the microstrip mode step by step into the field image of the waveguide mode.
  • the transition UB has a transforming effect with regard to the wave resistance due to the gradations of the component B and ensures that the impedance Zo is matched to the impedance ZHL of the waveguide HL in the useful frequency range. This enables a low-loss and low-reflection transition between the two waveguides.
  • the microstrip line ML initially leads to area 2 of a so-called cutoff channel.
  • This channel is formed from component B, the rear side metallization RM and the via holes VH, which create a conductive connection between component B and rear side metallization RM.
  • the width of the cutoff channel is selected such that in this area 2, apart from the signal-carrying microstrip mode, no additional wave type can be propagated.
  • the length of the channel determines the attenuation of the undesired, non-propagable waveguide mode and prevents radiation in the free space (area 1).
  • the microstrip line ML is in a kind of partially filled waveguide.
  • the waveguide is formed from component B, the rear side metallization RM and the via holes VH (FIG. 5).
  • area 4 is the step-like structure of the
  • Component B connected to the microstrip line ML (Fig. 6).
  • the side walls of component B are conductively connected to the rear side metallization RM of the substrate S by a row of shields made of via holes VH. This forms a dielectric waveguide.
  • the signal energy is concentrated between the rear side metallization RM and the web formed from the microstrip line ML and the step ST1 of the component B.
  • the height of the step structure ST contained in component B decreases in area 5, so that when the component B is positively assembled onto the land structure LS of the substrate S, a defined air gap L is created between the substrate material and the step structure ST (FIG. 7).
  • the side walls of component B are conductively connected to the rear side metallization RM by means of via hoies VH. As a result, a partially filled dielectric waveguide is formed.
  • the width of the step expands by gradually aligning the field image from area 4 to the field image of the waveguide mode (area 6).
  • the length, width and height of the steps are selected such that the impedance of the microstrip mode Z 0 is transformed into the impedance of the waveguide mode ZHL at the end of area 6. If necessary, the number of steps in the structure of component B in region 5 can also be increased or a continuously tapered web can be used.
  • Area 6 shows the waveguide area HB.
  • the component B forms the side walls and the cover of the waveguide HL.
  • the waveguide base is formed by the land structure LS of the substrate S, ie, compared to region 5, there is now no dielectric filling in the waveguide HL.
  • a step structure (analogous to the step structure in area 5) can optionally also be present in the cap top.
  • the length and height of these steps is selected analogously to area 5 so that, in combination with the other areas, the impedance of the microstrip mode Z 0 is transformed into the impedance ZHL of the waveguide mode present at the end of area 6.
  • FIG. 9 shows another advantageous embodiment of the microstrip-waveguide transition according to the invention.
  • the waveguide opening DB advantageously has electrically conductive inner walls (IW).
  • Component B advantageously has a step shape ST in the area of the opening DB on the side wall opposite the waveguide opening DB. With this step shape ST, the waveguide shaft is deflected by 90 ° from the waveguide region HB of the component B into the waveguide opening DB of the substrate S.
  • a further waveguide or a radiation element can be arranged on the underside of the substrate S in the region of the waveguide opening DB.
  • a further carrier material TP on the rear side metallization RM for example a one to one multi-layer circuit board or a metal carrier attached.
  • the advantage of this arrangement compared to DE 197 41 944 A1 is the simplified and less expensive structure of the substrate S and the carrier material TP.
  • the waveguide opening is milled through and the inner walls are galvanized.

Landscapes

  • Waveguides (AREA)
  • Structure Of Printed Boards (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Waveguide Connection Structure (AREA)
  • Automatic Analysis And Handling Materials Therefor (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Tires In General (AREA)

Abstract

The arrangement has a microstrip conductor on the upper side of a substrate and a hollow conductor on the upper side with an opening and a stepped structure on a side wall near the opening connected to the microstrip conductor. One hollow conductor side wall is a metallised coating on the substrate with an opening into which the microstrip conductor protrudes. Through contacting is arranged between rear metallisation and the metallised coating. The arrangement has a microstrip conductor (ML) on the upper side of a substrate and a hollow conductor on the upper side of the substrate with an opening and stepped structure (ST) on a side wall near the opening connected to the microstrip conductor, whereby one side wall of the hollow conductor is a metallised coating (LS) on the substrate with an opening into which the microstrip conductor protrudes. Through contacting (VH) is arranged between rear side metallisation (RM) enclosing the opening and the metallised coating on the upper side.

Description

UBERGANG ZWISCHEN EINER MIKROSTREIFENLEITUNG UND EINEM HOHLLEITER . TRANSITION BETWEEN A MICROSTRIP AND A WAVE LADDER.
Die Erfindung betrifft eine Anordnung gemäß Patentanspruch 1.The invention relates to an arrangement according to claim 1.
In vielen Anwendungsfällen der Höchstfrequenztechnik, insbesondere in der Milli- meter-Wellentechnik, ist es erforderlich, eine in einer Mikrostreifenleitung geführte Welle in einen Hohlleiter einzukoppeln und umgekehrt. Hierbei wird ein möglichst reflexions- und verlustfreier Übergang gewünscht. Dieser Übergang sorgt innerhalb eines begrenzten Frequenzbereichs dafür, dass die Impedanzen zwischen dem Hohlleiter und der Streifenleitung aneinander angepaßt werden und dass das Feld- bild des einen Wellenleitertyps in das Feldbild des anderen Wellenleitertyps überführt wird.In many applications of ultra-high frequency technology, especially in millimeter wave technology, it is necessary to couple a wave guided in a microstrip line into a waveguide and vice versa. Here, a transition that is as free of reflection and loss as possible is desired. Within a limited frequency range, this transition ensures that the impedances between the waveguide and the strip line are matched to one another and that the field image of one waveguide type is converted into the field image of the other waveguide type.
Mikrostreifenleitung-Hohlleiter-Übergänge sind z.B. aus DE 197 41 944 A1 oder US 6,265,950 B1 bekannt.Microstrip line-waveguide transitions are e.g. known from DE 197 41 944 A1 or US 6,265,950 B1.
In DE 197 41 944 A1 wird eine Anordnung beschrieben bei der die Mikrostreifenleitung auf der Oberseite des Substrats aufgebracht ist (Fig. 1). Der Hohlleiter HL ist mit einer Stirnfläche an der Unterseite des Substrats S angebracht. Das Substrat S weist im Bereich des Hohlleiters HL einen Durchbruch D auf, der im wesentlichen dem Querschnitt des Hohlleiters HL entspricht. An der Mikrostreifenleitung ML ist ein Koppelelement (nicht dargestellt) angeordnet, welches in den Durchbruch D hineinragt. Der Durchbruch D ist auf der Oberseite des Substrats S von einer Schirmkappe SK umgeben, welche mittels elektrisch leitfähigen Bohrlöchern (Via-Holes) VH mit der auf der Unterseite des Substrats S vorhandenen Metallisierung RM elektrisch leitend verbunden ist.DE 197 41 944 A1 describes an arrangement in which the microstrip line is applied to the top of the substrate (FIG. 1). The waveguide HL is attached to the underside of the substrate S with an end face. The substrate S has an opening D in the region of the waveguide HL, which essentially corresponds to the cross section of the waveguide HL. A coupling element (not shown), which projects into the opening D, is arranged on the microstrip line ML. The opening D is on the top of the substrate S from a shield cap SK surrounded, which is electrically conductively connected by means of electrically conductive boreholes (via holes) VH to the metallization RM present on the underside of the substrate S.
Diese Anordnung hat den Nachteil, dass die Leiterplatte leitfähig auf eine vorbearbeitete, den Hohlleiter HL beinhaltende Trägerplatte montiert werden muß. Zusätzlich ist eine präzise gefertigte, mechanisch genau positionierte und leitfähig aufzubrin- gende Schirmkappe SK notwendig. Die Herstellung dieser Anordnung ist durch die hohe Anzahl von verschiedenartigen Bearbeitungsschritten zeit- und kostenintensiv. Weitere Nachteile entstehen durch hohen Raumbedarf aufgrund des außerhalb der Leiterplatte angeordneten Hohlleiters.This arrangement has the disadvantage that the printed circuit board must be mounted in a conductive manner on a pre-machined carrier plate containing the waveguide HL. In addition, a precisely manufactured, mechanically precisely positioned and conductive shield cap SK is required. The manufacture of this arrangement is time-consuming and costly due to the large number of different processing steps. Further disadvantages arise from the high space requirement due to the hollow conductor arranged outside the printed circuit board.
Bei der in US 6,265,950 B1 beschriebenen Anordnung für einen Übergang zwischen einer Mikrostreifenleitung und einem Hohlleiter ragt das Substrat mit der darauf aufgebrachten Mikrostreifenleitung in den Hohlleiter hinein. Ein Nachteil dieser Anordnung ist die Integration des Hohlleiters in eine Leiterkartenumgebung. Der Hohlleiter kann lediglich an den Begrenzungsflächen der Leiterkarte (Substrat) angeordnet werden. Eine Integration des Hohlleiters innerhalb der Leiterkarte ist aus Gründen der kostenintensiven Vorbereitung der Leiterplatte nicht möglich.In the arrangement described in US Pat. No. 6,265,950 B1 for a transition between a microstrip line and a waveguide, the substrate with the microstrip line applied thereon projects into the waveguide. A disadvantage of this arrangement is the integration of the waveguide in a circuit board environment. The waveguide can only be arranged on the boundary surfaces of the circuit board (substrate). An integration of the waveguide within the circuit board is not possible due to the costly preparation of the circuit board.
Es ist Aufgabe der Erfindung eine Anordnung für einen Übergang zwischen einer Mikrostreifenleitung und einem Hohlleiter anzugeben, welche einfach und kostengünstig zu realisieren ist und einen geringen Raumbedarf beansprucht.It is an object of the invention to provide an arrangement for a transition between a microstrip line and a waveguide which is simple and inexpensive to implement and which takes up little space.
Diese Aufgabe wird von der Anordnung mit den Merkmalen gemäß Patentanspruch 1 gelöst. Vorteilhafte Ausgestaltungen der Anordnung sind Gegenstand von Unteransprüchen.This object is achieved by the arrangement with the features according to claim 1. Advantageous embodiments of the arrangement are the subject of dependent claims.
Die erfindungsgemäße Anordnung für einen Übergang zwischen einer Mikrostreifenleitung und einem Hohlleiter umfasst - eine auf der Oberseite eines dielektrischen Substrats aufgebrachte Mikrostreifenleitung, - einen auf der Oberseite des Substrats aufgebrachten Hohlleiter mit einer Öffnung an mindestens einer Stirnfläche und einer im Bereich der Öffnung an einer Seitenwand ausgeführten stufenförmigen Struktur, welche in mindestens einem Teil mit der Mikrostreifenleitung leitend verbunden ist und wobei eine Seitenwand des Hohlleiters eine auf dem Substrat ausgeführte metallisierte Schicht ist, - eine in der metallisierten Schicht ausgeführte Aussparung, in die die Mikrostreifenleitung hineinragt,The arrangement according to the invention for a transition between a microstrip line and a waveguide comprises a microstrip line applied to the top side of a dielectric substrate, a waveguide applied to the top side of the substrate with an opening on at least one end face and a step-shaped structure implemented in the region of the opening on a side wall, which is conductively connected to the microstrip line in at least part and wherein a side wall of the waveguide is a metallized layer carried out on the substrate, a recess made in the metallized layer into which the microstrip line projects,
- eine auf der Rückseite des Substrats ausgeführte Ruckseitenmetallisierung,a rear side metallization carried out on the back of the substrate,
- elektrisch leitende Durchkontaktierungen zwischen der metallisierten Schicht auf der Oberseite des Substrats und der Ruckseitenmetallisierung, welche die Aus- sparung umgeben.- Electrically conductive vias between the metallized layer on the top of the substrate and the backside metallization, which surround the recess.
Ein Vorteil der erfindungsgemäßen Anordnung ist die einfache und kostengünstige Herstellung des Mikrostreifen-Hohlleiter-Überganges. Um den Übergang zu realisieren sind im Gegensatz zum Stand der Technik weniger Bauteile nötig. Ein weiterer Vorteil ist, dass die Implementierung des Hohlleiters in die Leiterkartenumgebung nicht wie bei US 6,265,950 am Rand der Leiterkarte erfolgen muß, sondern, dass sie an einem beliebigen Ort auf der Leiterkarte erfolgen kann. Die erfindungsgemäße Anordnung weist somit einen geringen Raumbedarf auf.An advantage of the arrangement according to the invention is the simple and inexpensive production of the microstrip-waveguide transition. In contrast to the prior art, fewer components are required to implement the transition. A further advantage is that the implementation of the waveguide in the circuit board environment does not have to take place at the edge of the circuit card, as in US Pat. No. 6,265,950, but that it can take place anywhere on the circuit card. The arrangement according to the invention thus requires little space.
Vorteilhaft ist der Hohlleiter ein SMD-(surface mount device) Bauteil. Das Hohlleiterteil wird dazu in einem einfachen Montageschritt von oben auf die Leiterkarte aufgesetzt und leitfähig verbunden. Der Anschluss des Hohlleiters an den Übergang kann so in bekannte Bestückungsverfahren integriert werden. Hierdurch werden Fertigungsschritte eingespart, wodurch die Herstellungskosten und -zeit gesenkt werden. Die Erfindung sowie weitere vorteilhafte Ausgestaltungen der erfindungsgemäßen Anordnung werden im folgenden anhand von Zeichnungen näher erläutert. Es zei- gen:The waveguide is advantageously an SMD (surface mount device) component. For this purpose, the waveguide part is placed on the circuit board from above in a simple assembly step and connected in a conductive manner. The connection of the waveguide to the transition can thus be integrated into known assembly processes. This saves manufacturing steps, which reduces manufacturing costs and time. The invention and further advantageous embodiments of the arrangement according to the invention are explained in more detail below with reference to drawings. Show it:
Fig. 1 einen Längsschnitt durch eine Anordnung für einen Mikrostreifen-Hohlleiter- Übergang gemäß dem Stand der Technik,1 shows a longitudinal section through an arrangement for a microstrip-waveguide transition according to the prior art,
Fig. 2 in Draufsicht die metallisierte Schicht auf der Oberseite des Substrats, Fig. 3 eine perspektivische Ansicht einer beispielhaften stufenförmigen Innenstruktur des SMD-Bauteils,2 shows a top view of the metallized layer on the top of the substrate, FIG. 3 shows a perspective view of an exemplary step-shaped inner structure of the SMD component,
Fig. 4 einen Längsschnitt durch eine erfindungsgemäße Anordnung für einen Mi- krostreifen-Hohlleiter-Übergang,4 shows a longitudinal section through an arrangement according to the invention for a microstrip-waveguide transition,
Fig. 5 einen ersten Querschnitt durch den Bereich 3 in Fig. 4, Fig. 6 einen zweiten Querschnitt durch den Bereich 4 in Fig. 4,5 shows a first cross section through area 3 in FIG. 4, FIG. 6 shows a second cross section through area 4 in FIG. 4,
Fig. 7 einen dritten Querschnitt durch den Bereich 5 in Fig. 4,7 shows a third cross section through area 5 in FIG. 4,
Fig. 8 einen vierten Querschnitt durch den Bereich 6 in Fig. 4.8 shows a fourth cross section through area 6 in FIG. 4.
Fig. 9 eine weitere vorteilhafte Ausführungsform des erfindungsgemäßen Mikrost- reifen-Hohlleiter-Überganges.9 shows a further advantageous embodiment of the microstrip-waveguide transition according to the invention.
Fig. 2 zeigt in Draufsicht die metallisierte Schicht des Substrats. Diese metallisierte Schicht wird auch als Landestruktur für den Mikrostreifen-Hohlleiter-Übergang bezeichnet. Die Landestruktur LS weist eine Aussparung A mit einer Öffnung OZ auf. Durch diese Öffnung OZ verläuft die Mikrostreifenleitung ML, welche innerhalb der Aussparung A endet. Die Aussparung A ist umgeben von Durchkontaktierungen VH, auch als Via-Holes bezeichnet. Diese Durchkontaktierungen VH sind elektrisch leitend ausgeführte Durchbrechungen des Substrats, welche die Landestruktur LS mit der auf der Rückseite des Substrats ausgeführten Ruckseitenmetallisierung (nicht dargestellt) verbindet. Der Abstand der Via-Holes VH zueinander ist so eng gewählt, dass innerhalb des Nutzfrequenzbereichs die Abstrahlung der elektromagnetischen Welle durch die Zwischenräume gering ist. Die Via-Holes VH können dabei zur Ver- ringerung der Abstrahlung vorteilhaft auch in mehreren parallel zueinander angeordneten Reihen verlaufen.2 shows a top view of the metallized layer of the substrate. This metallized layer is also referred to as the state structure for the microstrip-waveguide transition. The country structure LS has a recess A with an opening OZ. The microstrip line ML, which ends within the recess A, runs through this opening OZ. The recess A is surrounded by vias, also referred to as via holes. These plated-through holes VH are electrically conductive openings in the substrate which connect the country structure LS to the rear side metallization (not shown) on the back of the substrate. The distance between the Via-Holes VH is so narrow that that the radiation of the electromagnetic wave through the gaps is low within the useful frequency range. In order to reduce the radiation, the via holes VH can advantageously also run in several rows arranged parallel to one another.
Fig. 3 zeigt eine perspektivische Darstellung einer beispielhaften stufenförmigen Innenstruktur des SMD-Bauteils. Das Bauteil B weist entsprechend der Öffnung in der Aussparung der Landestruktur (vgl. Fig. 2) ebenfalls eine Öffnung OB auf. In Längsrichtung des Bauteils ist in einem vorgebbaren Abstand von der Öffnung OB an der Seitenwand eine stufenförmige Struktur ST1 , ST ausgebildet. Die die Stufenstruktur ST1 und ST beinhaltende Seitenwand des Bauteils B liegt nach der Montage der Landestruktur LS der Substratoberfläche gegenüber (vgl. Fig. 4). Das aufzubringende Hohlleiterbauteil B ist vor der Montage nach unten (in Richtung des Substrats) geöffnet und dadurch noch unvollständig. Die noch fehlende Seitenwand wird durch die auf dem Substrat ausgeführte Landestruktur LS gebildet.3 shows a perspective illustration of an exemplary step-shaped inner structure of the SMD component. Component B also has an opening OB corresponding to the opening in the recess in the country structure (see FIG. 2). A step-like structure ST1, ST is formed in the longitudinal direction of the component at a predeterminable distance from the opening OB on the side wall. The side wall of component B containing the step structure ST1 and ST lies opposite the substrate surface after the assembly of the country structure LS (cf. FIG. 4). The waveguide component B to be applied is opened downwards (in the direction of the substrate) before assembly and is therefore still incomplete. The still missing side wall is formed by the country structure LS executed on the substrate.
Die erfindungsgemäße Anordnung ist ferner nicht durch die Anzahl der in Fig. 3 oder Fig. 4 dargestellten Stufen begrenzt. Die Struktur ST kann hinsichtlich Zahl der Stufen, Länge und Breite der einzelnen Stufen an die jeweiligen Erfordernisse des Übergangs angepaßt werden. Es ist selbstverständlich auch möglich einen kontinuierlichen Übergang zu realisieren.The arrangement according to the invention is also not limited by the number of stages shown in FIG. 3 or FIG. 4. The structure ST can be adapted to the respective requirements of the transition with regard to the number of steps, length and width of the individual steps. Of course, it is also possible to implement a continuous transition.
In der gezeigten Darstellung weist die mit dem Bezugszeichen ST1 bezeichnete Stufe eine derartige Höhe auf, dass beim formschlüssigen Aufbringen des Bauteils B auf die Landestruktur gemäß Fig. 2 die Stufe ST1 direkt auf der Mikrostreifenleitung ML aufliegt und somit eine elektrisch leitende Verbindung zwischen der Mikrostreifenleitung ML und dem Bauteil B herstellt.In the illustration shown, the step designated by the reference symbol ST1 has such a height that when the component B is positively attached to the land structure according to FIG. 2, the step ST1 rests directly on the microstrip line ML and thus an electrically conductive connection between the microstrip line ML and the component B.
Fig. 4 zeigt im Längsschnitt eine erfindungsgemäße Anordnung eines Mikrostreifen- Hohlleiter-Überganges. Hierbei ist das Bauteil B gemäß Fig. 3 formschlüssig auf die Landestruktur des Substrats S gemäß Fig. 3 aufgebracht. Das Bauteil B wird dabei insbesondere derart auf das Substrat aufgebracht, dass zwischen der Landestruktur und dem Bauteil B eine elektrisch leitende Verbindung entsteht.Fig. 4 shows in longitudinal section an arrangement according to the invention of a microstrip-waveguide transition. Here, component B according to FIG. 3 is positively applied to the land structure of substrate S according to FIG. 3. The component B is thereby in particular applied to the substrate in such a way that an electrically conductive connection is formed between the country structure and component B.
Auf der Unterseite weist das Substrat S eine im wesentlichen durchgängige metallische Beschichtung RM auf. Der Hohlleiterbereich ist in der Darstellung mit dem Bezugszeichen HB gekennzeichnet. Der Übergangsbereich ist mit dem Bezugszeichen ÜB gekennzeichnet.The substrate S has an essentially continuous metallic coating RM on the underside. The waveguide region is identified in the illustration with the reference symbol HB. The transition area is identified by the reference symbol ÜB.
Der erfindungsgemäße Mikrostreifen-Hohlleiter-Übergang funktioniert nach folgendem Prinzip:The microstrip-waveguide transition according to the invention works on the following principle:
Das Hochfrequenzsignal außerhalb des Hohlleiters HL wird durch eine Mikrostreifenleitung ML mit der Impedanz Z0 geführt (Bereich 1). Das Hochfrequenzsignal in- nerhalb des Hohlleiters HL wird in Form der TEι0-Hohlleitergrundmode geführt. Der Übergang ÜB wandelt das Feldbild der Mikrostreifen-Mode schrittweise in das Feldbild der Hohlleitermode um. Gleichzeitig wirkt der Übergang ÜB durch die Stufungen des Bauteils B bezüglich des Wellenwiderstands transformierend und sorgt im Nutzfrequenzbereich für eine Anpassung der Impedanz Zo an die Impedanz ZHL des Hohlleiters HL. Dadurch wird ein Verlust- und reflexionsarmer Übergang zwischen den beiden Wellenleitern ermöglicht.The high-frequency signal outside the waveguide HL is passed through a microstrip line ML with the impedance Z 0 (area 1). The high-frequency signal within the waveguide HL is carried in the form of the TEι 0 waveguide basic mode. The transition ÜB converts the field image of the microstrip mode step by step into the field image of the waveguide mode. At the same time, the transition UB has a transforming effect with regard to the wave resistance due to the gradations of the component B and ensures that the impedance Zo is matched to the impedance ZHL of the waveguide HL in the useful frequency range. This enables a low-loss and low-reflection transition between the two waveguides.
Die Mikrostreifenleitung ML führt zunächst in den Bereich 2 eines sogenannten Cutoff-Kanals. Dieser Kanal wird gebildet aus dem Bauteil B, der Rückseitenmetalli- sierung RM und den Via-Holes VH, die eine leitfähige Verbindung zwischen Bauteil B und Ruckseitenmetallisierung RM schaffen. Die Breite des Cutoff-Kanals ist so gewählt, dass in diesem Bereich 2 außer der signalführenden Mikrostreifen-Mode kein zusätzlicher Wellentyp ausbreitungsfähig ist. Die Länge des Kanals bestimmt die Dämpfung der unerwünschten nicht ausbreitungsfähigen Hohlleitermode und verhin- dert eine Abstrahlung in den Freiraum (Bereich 1). In Bereich 3 befindet sich die Mikrostreifenleitung ML in einer Art teilgefülltem Hohlleiter. Der Hohlleiter wird gebildet aus dem Bauteil B, der Ruckseitenmetallisierung RM und den Via-Holes VH (Fig. 5). Im Bereich 4 ist die stufenförmige Struktur desThe microstrip line ML initially leads to area 2 of a so-called cutoff channel. This channel is formed from component B, the rear side metallization RM and the via holes VH, which create a conductive connection between component B and rear side metallization RM. The width of the cutoff channel is selected such that in this area 2, apart from the signal-carrying microstrip mode, no additional wave type can be propagated. The length of the channel determines the attenuation of the undesired, non-propagable waveguide mode and prevents radiation in the free space (area 1). In area 3, the microstrip line ML is in a kind of partially filled waveguide. The waveguide is formed from component B, the rear side metallization RM and the via holes VH (FIG. 5). In area 4 is the step-like structure of the
Bauteils B mit der Mikrostreifenleitung ML verbunden (Fig. 6). Die Seitenwände des Bauteils B sind durch eine sogenannte Schirmreihe aus Via-Holes VH leitfähig mit der Ruckseitenmetallisierung RM des Substrats S verbunden. Dadurch bildet sich ein dielektrisch belasteter Steghohlleiter. Die Signalenergie konzentriert sich zwischen der Ruckseitenmetallisierung RM und dem aus der Mikrostreifenleitung ML und dem der Stufe ST1 des Bauteils B gebildeten Steg.Component B connected to the microstrip line ML (Fig. 6). The side walls of component B are conductively connected to the rear side metallization RM of the substrate S by a row of shields made of via holes VH. This forms a dielectric waveguide. The signal energy is concentrated between the rear side metallization RM and the web formed from the microstrip line ML and the step ST1 of the component B.
Im Vergleich zu Bereich 4 nimmt im Bereich 5 die Höhe der im Bauteil B enthaltenen Stufenstruktur ST ab, so dass beim formschlüssigen Zusammensetzen des Bauteils B auf die Landestruktur LS des Substrats S ein definierter Luftspalt L zwischen dem Substratmaterial und der Stufenstruktur ST entsteht (Fig. 7). Die Seitenwände des Bauteils B sind durch Via-Hoies VH leitfähig mit der Ruckseitenmetallisierung RM verbunden. Dadurch bildet sich ein teilgefüllter dielektrisch belasteter Steghohlleiter.Compared to area 4, the height of the step structure ST contained in component B decreases in area 5, so that when the component B is positively assembled onto the land structure LS of the substrate S, a defined air gap L is created between the substrate material and the step structure ST (FIG. 7). The side walls of component B are conductively connected to the rear side metallization RM by means of via hoies VH. As a result, a partially filled dielectric waveguide is formed.
Die Breite der Stufe erweitert sich um das Feldbild aus Bereich 4 allmählich an das Feldbild der Hohlleitermode anzugleichen (Bereich 6). Die Länge, Breite und Höhe der Stufen sind so gewählt, dass die Impedanz der Mikrostreifen-Mode Z0 in die Impedanz der Hohlleitermode ZHL am Ende von Bereich 6 transformiert wird. Bei Bedarf kann die Anzahl der Stufen in der Struktur des Bauteils B im Bereich 5 auch erhöht werden oder ein kontinuierlich getaperter Steg verwendet werden.The width of the step expands by gradually aligning the field image from area 4 to the field image of the waveguide mode (area 6). The length, width and height of the steps are selected such that the impedance of the microstrip mode Z 0 is transformed into the impedance of the waveguide mode ZHL at the end of area 6. If necessary, the number of steps in the structure of component B in region 5 can also be increased or a continuously tapered web can be used.
Bereich 6 zeigt den Hohlleiterbereich HB. Das Bauteil B bildet die Seitenwände und den Deckel des Hohlleiters HL. Der Hohlleiterboden wird von der Landestruktur LS des Substrats S gebildet, d.h. im Vergleich zu Bereich 5 befindet jetzt keine dielektrische Füllung im Hohlleiter HL. Eine oder mehrere quer zur Ausbreitungsrichtung der Hohlleiterwelle verlaufende Schirmreihen aus Via-Holes VH im Übergangsbereich zwischen Bereich 5 und BeArea 6 shows the waveguide area HB. The component B forms the side walls and the cover of the waveguide HL. The waveguide base is formed by the land structure LS of the substrate S, ie, compared to region 5, there is now no dielectric filling in the waveguide HL. One or more rows of shields from Via-Holes VH running transversely to the direction of propagation of the waveguide shaft in the transition area between area 5 and Be
reich 6 realisieren den Übergang zwischen dem teilweise dielektrisch gefüllten Hohlleiter und dem rein luftgefüllten Hohlleiter. Gleichzeitig wird durch diese Schirmreihen die Einkopplung des Signals zwischen der Landestruktur LS und der Rückseitenme- tallisierung verhindert.realm 6 realize the transition between the partially dielectric filled waveguide and the purely air filled waveguide. At the same time, these rows of shields prevent the coupling of the signal between the country structure LS and the rear side metallization.
In Bereich 6 kann im Kappenoberteil optional auch eine Stufenstruktur (analog zu der Stufenstruktur im Bereich 5) vorhanden sein. Die Länge und Höhe dieser Stufen ist analog zu Bereich 5 so gewählt, dass in Kombination mit den anderen Bereichen die Impedanz der Mikrostreifen-Mode Z0 in die am Ende von Bereich 6 vorliegende Impedanz ZHL der Hohlleitermode transformiert wird.In area 6, a step structure (analogous to the step structure in area 5) can optionally also be present in the cap top. The length and height of these steps is selected analogously to area 5 so that, in combination with the other areas, the impedance of the microstrip mode Z 0 is transformed into the impedance ZHL of the waveguide mode present at the end of area 6.
In Fig. 9 ist eine weitere vorteilhafte Ausführungsform des erfindungsgemäßen Mikrostreifen-Hohlleiter-Überganges dargestellt. Mit dieser Ausführungsform ist es möglich, einen einfachen und kostengünstigen Hohlleiterübergang zu realisieren, bei dem das Hochfrequenzsignal durch das Substrat S hindurch nach unten durch die im Substrat enthaltene durchgängige Hohlleiteröffnung DB ausgekoppelt werden kann. Die Hohlleiteröffnung DB weist vorteilhaft elektrisch leitende Innenwände (IW) auf. Das Bauteil B weist vorteilhaft im Bereich der Durchbrechung DB auf der der Hohlleiteröffnung DB gegenüberliegenden Seitenwand eine Stufenform ST auf. Mit dieser Stufenform ST wird die Hohlleiterwelle um 90° vom Hohlleiterbereich HB des Bauteils B in die Hohlleiteröffnung DB des Substrats S umgelenkt. Auf der Unterseite des Substrats S kann im Bereich der Hohlleiteröffnung DB z.B. ein weiterer Hohlleiter oder ein Strahlungselement angeordnet sein. Im vorliegenden Beispiel in Fig. 9 ist an der Ruckseitenmetallisierung RM ein weiteres Trägermaterial TP, z.B. eine ein- bis mehrlagige Leiterkarte oder ein Metallträger angebracht. Der Vorteil dieser Anordnung besteht im Vergleich zu DE 197 41 944 A1 in dem vereinfachten und kosten- günstigeren Aufbau des Substrats S und des Trägermaterials TP. Die Hohlleiteröffnung wird durchgängig gefräst und die Innenwände durch Galvanik metallisiert. BeideFIG. 9 shows another advantageous embodiment of the microstrip-waveguide transition according to the invention. With this embodiment, it is possible to implement a simple and inexpensive waveguide transition, in which the high-frequency signal can be coupled down through the substrate S through the through waveguide opening DB contained in the substrate. The waveguide opening DB advantageously has electrically conductive inner walls (IW). Component B advantageously has a step shape ST in the area of the opening DB on the side wall opposite the waveguide opening DB. With this step shape ST, the waveguide shaft is deflected by 90 ° from the waveguide region HB of the component B into the waveguide opening DB of the substrate S. A further waveguide or a radiation element, for example, can be arranged on the underside of the substrate S in the region of the waveguide opening DB. In the present example in FIG. 9 there is a further carrier material TP on the rear side metallization RM, for example a one to one multi-layer circuit board or a metal carrier attached. The advantage of this arrangement compared to DE 197 41 944 A1 is the simplified and less expensive structure of the substrate S and the carrier material TP. The waveguide opening is milled through and the inner walls are galvanized. Both
Arbeitsschritte sind in der Leiterplattentechnologie übliche, leicht durchführbare Stan- dardverfahren. Work steps are standard, easy-to-carry out standard circuit board technology.

Claims

Patentansprüche claims
1. Anordnung für einen Übergang zwischen einer Mikrostreifenleitung und einem Hohlleiter, umfassend1. Arrangement for a transition between a microstrip line and a waveguide, comprising
- eine auf der Oberseite eines dielektrischen Substrats (S) aufgebrachte Mikrostreifenleitung (ML),a microstrip line (ML) applied to the top of a dielectric substrate (S),
- einen auf der Oberseite des Substrats (S) aufgebrachten Hohlleiter mit einer Öffnung (OB) an mindestens einer Stirnfläche und einer im Bereich der Öffnung (OB) an einer Seitenwand ausgeführten stufenförmigen Struktur (ST), welche in mindestens einem Teil (ST1) mit der Mikrostreifenleitung (ML) leitend verbunden ist und wobei eine Seitenwand des Hohlleiters eine auf dem Substrat (S) ausgeführte metallisierte Schicht (LS) ist, - eine in der metallisierten Schicht (LS) ausgeführte Aussparung (A), in die die- A waveguide applied to the top of the substrate (S) with an opening (OB) on at least one end face and a step-shaped structure (ST) executed in the region of the opening (OB) on a side wall, which in at least one part (ST1) the microstrip line (ML) is conductively connected and wherein a side wall of the waveguide is a metallized layer (LS) executed on the substrate (S), - a recess (A) made in the metallized layer (LS), into which the
Mikrostreifenleitung (ML) hineinragt,Microstrip line (ML) protrudes,
- eine auf der Rückseite des Substrats (S) ausgeführte Ruckseitenmetallisierung (RM),a rear side metallization (RM) carried out on the back of the substrate (S),
- elektrisch leitende Durchkontaktierungen (VH) zwischen der metallisierten Schicht (LS) auf der Oberseite des Substrats (S) und der Ruckseitenmetallisierung (RM), welche die Aussparung (A) umgeben.- Electrically conductive vias (VH) between the metallized layer (LS) on the top of the substrate (S) and the backside metallization (RM), which surround the recess (A).
2. Anordnung nach Anspruch 1 , dadurch gekennzeichnet, dass der Hohlleiter (B) ein SMD-Bauteil ist.2. Arrangement according to claim 1, characterized in that the waveguide (B) is an SMD component.
3. Anordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die stu- fenförmige Struktur (ST) an der der Aussparung (A) gegenüberliegenden Seitenwand des Hohleiters (B) ausgeführt ist.3. Arrangement according to claim 1 or 2, characterized in that the step-shaped structure (ST) is carried out on the side wall of the semiconductor (B) opposite the recess (A).
4. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Abstand der Durchkontaktierungen (VH) zueinander so ge- wählt wird, dass die Abstrahlung der elektromagnetischen Welle im Nutzfrequenzbereich durch die Zwischenräume gering ist und die Funktion des Übergangs somit nicht durch erhöhte Verluste oder unerwünschte Verkopplungen be- einträchtigt wird.4. Arrangement according to one of the preceding claims, characterized in that the distance between the vias (VH) to each other so it is chosen that the radiation of the electromagnetic wave in the useful frequency range through the gaps is low and the function of the transition is therefore not impaired by increased losses or undesired coupling.
5. Anordnung nach Anspruch 4, dadurch gekennzeichnet, dass die Durchkontaktierungen (VH) in mehreren parallel zueinander angeordneten Reihen verlaufen.5. Arrangement according to claim 4, characterized in that the vias (VH) run in a plurality of rows arranged parallel to one another.
6. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass das Substrat (S) im Bereich der metallisierten Schicht (LS) auf der Oberseite des Substrats (S) eine Hohlleiteröffnung (DB) aufweist.6. Arrangement according to one of the preceding claims, characterized in that the substrate (S) in the region of the metallized layer (LS) on the top of the substrate (S) has a waveguide opening (DB).
7. Anordnung nach Anspruch 5, dadurch gekennzeichnet, dass die Innenoberfläche der Hohlleiteröffnung (DB) elektrisch leitend ist.7. Arrangement according to claim 5, characterized in that the inner surface of the waveguide opening (DB) is electrically conductive.
8. Anordnung nach Anspruch 5 oder 6, dadurch gekennzeichnet, dass die der Oberseite des Substrats gegenüberliegende Seitenwand des Hohlleiters (B) im Bereich der Hohlleiteröffnung (DB) eine stufenförmige Struktur (ST) aufweist. 8. Arrangement according to claim 5 or 6, characterized in that the side wall of the waveguide (B) opposite the upper side of the substrate has a step-shaped structure (ST) in the region of the waveguide opening (DB).
EP03798047A 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide Expired - Lifetime EP1540762B1 (en)

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DE10243671A DE10243671B3 (en) 2002-09-20 2002-09-20 Arrangement for transition between microstrip conductor, hollow conductor has one hollow conductor side wall as metallised coating on substrate with opening into which microstrip conductor protrudes
DE10243671 2002-09-20
PCT/DE2003/002553 WO2004030142A1 (en) 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide

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