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EP1057859A3 - Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm - Google Patents

Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm Download PDF

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Publication number
EP1057859A3
EP1057859A3 EP00111681A EP00111681A EP1057859A3 EP 1057859 A3 EP1057859 A3 EP 1057859A3 EP 00111681 A EP00111681 A EP 00111681A EP 00111681 A EP00111681 A EP 00111681A EP 1057859 A3 EP1057859 A3 EP 1057859A3
Authority
EP
European Patent Office
Prior art keywords
resin composition
sensitive resin
radiation sensitive
insulating film
interlaminar insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00111681A
Other languages
English (en)
French (fr)
Other versions
EP1057859A2 (de
EP1057859B1 (de
Inventor
Isao c/o JSR Corporation Nishimura
Masayoshi c/o JSR Corporation Suzuki
Fumiko c/o JSR Corporation Yonezawa
Masayuki c/o JSR Corporation Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of EP1057859A2 publication Critical patent/EP1057859A2/de
Publication of EP1057859A3 publication Critical patent/EP1057859A3/de
Application granted granted Critical
Publication of EP1057859B1 publication Critical patent/EP1057859B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/22Compounds containing nitrogen bound to another nitrogen atom
    • C08K5/27Compounds containing a nitrogen atom bound to two other nitrogen atoms, e.g. diazoamino-compounds
    • C08K5/28Azides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Magnetic Heads (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
EP00111681A 1999-06-04 2000-05-31 Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm Expired - Lifetime EP1057859B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15746399 1999-06-04
JP11157463A JP2000347397A (ja) 1999-06-04 1999-06-04 感放射線性樹脂組成物およびその層間絶縁膜への使用

Publications (3)

Publication Number Publication Date
EP1057859A2 EP1057859A2 (de) 2000-12-06
EP1057859A3 true EP1057859A3 (de) 2000-12-20
EP1057859B1 EP1057859B1 (de) 2004-05-19

Family

ID=15650226

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00111681A Expired - Lifetime EP1057859B1 (de) 1999-06-04 2000-05-31 Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm

Country Status (6)

Country Link
US (1) US6399267B1 (de)
EP (1) EP1057859B1 (de)
JP (1) JP2000347397A (de)
KR (1) KR100663818B1 (de)
DE (1) DE60010797T2 (de)
TW (1) TW593488B (de)

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AUPQ700100A0 (en) * 2000-04-18 2000-05-11 Orbital Engine Company (Australia) Proprietary Limited Engine speed control for internal combustion engines
EP1312982A4 (de) * 2000-07-27 2007-11-07 Jsr Corp Strahlungsempfindliche zusammensetzung, isolierends film und elektrolumineszenz bildschirm
EP1235104A4 (de) * 2000-08-29 2008-10-01 Jsr Corp Zusammensetzung deren brechungsindex durch bestrahlung variiert werden kann, sowie ein verfahren zur erzeugung eines beugungsmusters
US7108954B2 (en) * 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
RU2281310C2 (ru) 2001-02-19 2006-08-10 Джей Эс Эр КОРПОРЕЙШН Чувствительная к облучению композиция, изменяющая показатель преломления
US7125647B2 (en) * 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
TW555822B (en) * 2001-03-15 2003-10-01 Jsr Corp Light diffuse reflecting film-forming composition, manufacturing method thereof, light diffuse reflecting film and liquid crystal display element
JP4524944B2 (ja) * 2001-03-28 2010-08-18 Jsr株式会社 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズの形成への使用、ならびに層間絶縁膜およびマイクロレンズ
JP4631081B2 (ja) * 2001-07-16 2011-02-16 ナガセケムテックス株式会社 ポジ型感放射線性樹脂組成物
JP2003043682A (ja) 2001-08-01 2003-02-13 Jsr Corp 感放射線性誘電率変化性組成物、誘電率変化法
KR100784672B1 (ko) * 2001-08-20 2007-12-12 주식회사 동진쎄미켐 감광성 수지 조성물
KR100809544B1 (ko) * 2001-10-24 2008-03-04 주식회사 동진쎄미켐 퀴논디아지드 술폰산 에스테르 화합물을 포함하는 감광성수지조성물
CN100468195C (zh) * 2002-04-18 2009-03-11 日产化学工业株式会社 正型感光性树脂组合物及图案形成方法
KR20040092550A (ko) * 2003-04-24 2004-11-04 클라리언트 인터내셔널 리미티드 레지스트 조성물 및 레지스트 제거용 유기용제
JP4099114B2 (ja) * 2003-06-26 2008-06-11 Azエレクトロニックマテリアルズ株式会社 感光性樹脂組成物
CN100535747C (zh) * 2003-07-16 2009-09-02 Az电子材料(日本)株式会社 光敏树脂组合物
KR100571721B1 (ko) * 2004-02-10 2006-04-17 삼성전자주식회사 신너 조성물 및 이를 이용한 포토레지스트의 제거 방법
CN1898605B (zh) * 2004-04-08 2010-08-18 Jsr株式会社 辐射敏感性树脂组合物、层间绝缘膜和微透镜以及它们的制备方法
TWI386714B (zh) * 2004-05-06 2013-02-21 Dongjin Semichem Co Ltd Tft-lcd用層間有機絕緣膜、tft-lcd用層間有機絕緣膜用丙烯酸系共聚合體樹脂及其製造方法
KR20050113351A (ko) * 2004-05-27 2005-12-02 주식회사 동진쎄미켐 감광성 수지 조성물
KR101206780B1 (ko) * 2005-03-03 2012-11-30 주식회사 동진쎄미켐 감광성 수지 조성물
KR101326595B1 (ko) * 2005-06-04 2013-11-20 주식회사 동진쎄미켐 감광성 수지 조성물, 이를 이용한 박막 트랜지스터 기판의 제조방법 및 공통 전극 기판의 제조방법
US7799509B2 (en) * 2005-06-04 2010-09-21 Samsung Electronics Co., Ltd. Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
JP4934353B2 (ja) * 2005-06-10 2012-05-16 ドンジン セミケム カンパニー リミテッド ネガティブ感光性樹脂組成物
KR100696195B1 (ko) 2005-09-13 2007-03-20 한국전자통신연구원 저온 경화형 고분자 게이트 절연막 및 이를 적용한 유기박막 트랜지스터
JP4654867B2 (ja) * 2005-10-07 2011-03-23 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
KR101330345B1 (ko) 2006-04-25 2013-11-15 코오롱인더스트리 주식회사 절연막 형성용 조성물
KR100867948B1 (ko) * 2006-12-13 2008-11-11 제일모직주식회사 유기 절연막 형성용 감광성 수지 조성물 및 이를 포함하는소자
KR101333859B1 (ko) * 2007-09-28 2013-12-19 도오꾜오까고오교 가부시끼가이샤 공중합체, 수지 조성물, 표시 패널용 스페이서, 평탄화막, 열경화성 보호막, 마이크로 렌즈, 및 공중합체의 제조 방법
KR100922843B1 (ko) 2007-12-13 2009-10-20 제일모직주식회사 절연막 형성용 감광성 수지 조성물
JP5343664B2 (ja) * 2009-03-30 2013-11-13 Jsr株式会社 感放射線性樹脂組成物、有機el表示素子用隔壁及び絶縁膜、並びにその形成方法
CN101955743B (zh) * 2010-09-16 2012-08-22 明基材料有限公司 粘着剂的组成物及其制造方法
EP2850114B1 (de) * 2012-05-18 2017-03-15 Ricoh Company, Ltd. Lichtpolymerisierbare zusammensetzung, lichtpolymerisierbare tintenstrahltinte und tintenpatrone
KR20140015869A (ko) * 2012-07-26 2014-02-07 삼성디스플레이 주식회사 포토 레지스트 조성물 및 이를 이용한 박막 트랜지스터 표시판 제조 방법
KR101747230B1 (ko) 2013-02-21 2017-06-14 제일모직 주식회사 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
EP3040411B1 (de) * 2013-08-30 2019-07-03 JSR Corporation Klebeflächenwiederherstellungsverfahren und einer klebeflächenwiederherstellungsvorrichtung
CN107383594B (zh) * 2017-07-16 2019-07-26 常州大学 一种纳米无机粒子共混改性聚丙烯微孔膜的制备方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
GB2054617A (en) * 1979-07-16 1981-02-18 Mitsubishi Rayon Co Radiation sensitive resins comprising 2-alkylglycidyl methacrylate homopolymer or copolymer
JPH08262709A (ja) * 1995-03-24 1996-10-11 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
EP0845708A1 (de) * 1996-06-17 1998-06-03 Toray Industries, Inc. Trocken flachdruckplatte
JPH1152560A (ja) * 1997-08-06 1999-02-26 Jsr Corp 感放射線性樹脂組成物

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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
GB2054617A (en) * 1979-07-16 1981-02-18 Mitsubishi Rayon Co Radiation sensitive resins comprising 2-alkylglycidyl methacrylate homopolymer or copolymer
JPH08262709A (ja) * 1995-03-24 1996-10-11 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
EP0845708A1 (de) * 1996-06-17 1998-06-03 Toray Industries, Inc. Trocken flachdruckplatte
JPH1152560A (ja) * 1997-08-06 1999-02-26 Jsr Corp 感放射線性樹脂組成物

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Title
CHEMICAL ABSTRACTS, vol. 126, no. 5, 3 February 1997, Columbus, Ohio, US; abstract no. 67519, SHIMADA ET AL.: "Radiation-sensitive resin composition" XP002149934 *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 05 31 May 1999 (1999-05-31) *

Also Published As

Publication number Publication date
EP1057859A2 (de) 2000-12-06
JP2000347397A (ja) 2000-12-15
DE60010797D1 (de) 2004-06-24
KR100663818B1 (ko) 2007-01-03
DE60010797T2 (de) 2005-06-02
EP1057859B1 (de) 2004-05-19
TW593488B (en) 2004-06-21
US6399267B1 (en) 2002-06-04
KR20010007222A (ko) 2001-01-26

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