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DE69321040D1 - Zusatzspannungsgeneratorschaltung - Google Patents

Zusatzspannungsgeneratorschaltung

Info

Publication number
DE69321040D1
DE69321040D1 DE69321040T DE69321040T DE69321040D1 DE 69321040 D1 DE69321040 D1 DE 69321040D1 DE 69321040 T DE69321040 T DE 69321040T DE 69321040 T DE69321040 T DE 69321040T DE 69321040 D1 DE69321040 D1 DE 69321040D1
Authority
DE
Germany
Prior art keywords
voltage generator
generator circuit
auxiliary voltage
auxiliary
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69321040T
Other languages
English (en)
Other versions
DE69321040T2 (de
Inventor
Shyuichi Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15807920&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69321040(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69321040D1 publication Critical patent/DE69321040D1/de
Application granted granted Critical
Publication of DE69321040T2 publication Critical patent/DE69321040T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
DE69321040T 1992-06-24 1993-06-24 Zusatzspannungsgeneratorschaltung Expired - Lifetime DE69321040T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4165209A JP2755047B2 (ja) 1992-06-24 1992-06-24 昇圧電位発生回路

Publications (2)

Publication Number Publication Date
DE69321040D1 true DE69321040D1 (de) 1998-10-22
DE69321040T2 DE69321040T2 (de) 1999-05-20

Family

ID=15807920

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321040T Expired - Lifetime DE69321040T2 (de) 1992-06-24 1993-06-24 Zusatzspannungsgeneratorschaltung

Country Status (5)

Country Link
US (1) US5521547A (de)
EP (1) EP0576008B1 (de)
JP (1) JP2755047B2 (de)
KR (1) KR970005408B1 (de)
DE (1) DE69321040T2 (de)

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JP2933002B2 (ja) * 1996-04-05 1999-08-09 日本電気株式会社 電圧伝達回路
JPH09320267A (ja) * 1996-05-28 1997-12-12 Oki Micro Design Miyazaki:Kk 昇圧回路の駆動方法および昇圧回路
US5793224A (en) * 1996-06-18 1998-08-11 Micron Technology, Inc. Voltage generator for antifuse programming
US6064250A (en) 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
US6107863A (en) * 1997-02-03 2000-08-22 Matsushita Electric Industrial Co., Ltd. Charge pump circuit and logic circuit
US5801579A (en) * 1997-02-28 1998-09-01 Advanced Micro Devices, Inc. High voltage NMOS pass gate for integrated circuit with high voltage generator
US5852576A (en) * 1997-02-28 1998-12-22 Advanced Micro Devices, Inc. High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
US6078212A (en) * 1997-08-18 2000-06-20 Micron Technology, Inc. VT cancellation in output stage of charge pump
KR100279296B1 (ko) * 1998-06-09 2001-01-15 윤종용 승압 전압 발생 회로
KR100268887B1 (ko) * 1998-06-17 2000-10-16 김영환 차아지 펌프 회로
KR100294584B1 (ko) * 1998-06-19 2001-09-17 윤종용 반도체메모리장치의기판바이어스전압발생회로
JP3293577B2 (ja) 1998-12-15 2002-06-17 日本電気株式会社 チャージポンプ回路、昇圧回路及び半導体記憶装置
US6198335B1 (en) * 1999-02-25 2001-03-06 Stmicroelectronics, Inc. Method and apparatus to drive the coil of a magnetic write head
US6060873A (en) * 1999-03-12 2000-05-09 Vanguard International Semiconductor Corporation On-chip-generated supply voltage regulator with power-up mode
US6456152B1 (en) * 1999-05-17 2002-09-24 Hitachi, Ltd. Charge pump with improved reliability
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
US7023259B1 (en) * 2001-02-26 2006-04-04 Cypress Semiconductor Corp. High voltage switch with no latch-up hazards
US20030016070A1 (en) * 2001-07-17 2003-01-23 Wenhua Yang Bootstrap module for multi-stage circuit
KR20040030569A (ko) * 2002-02-22 2004-04-09 미쓰비시덴키 가부시키가이샤 전압발생회로
AU2003261893A1 (en) * 2002-10-24 2004-05-13 Matsushita Electric Industrial Co., Ltd. Voltage generation circuit, voltage generation device and semiconductor device using this, and driving method therefor
JP4393182B2 (ja) * 2003-05-19 2010-01-06 三菱電機株式会社 電圧発生回路
US6995603B2 (en) * 2004-03-03 2006-02-07 Aimtron Technology Corp. High efficiency charge pump with prevention from reverse current
JP2006115682A (ja) * 2004-09-14 2006-04-27 Mitsubishi Electric Corp 電圧発生回路
TWI285465B (en) * 2004-11-29 2007-08-11 Au Optronics Corp DC-DC converter formed on a glass substrate
US7936023B1 (en) 2006-09-26 2011-05-03 Cypress Semiconductor Corporation High voltage diode
US8044705B2 (en) * 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
CN101821929A (zh) * 2007-11-13 2010-09-01 夏普株式会社 电源电路及具备电源电路的显示装置
CN101842969A (zh) * 2007-12-28 2010-09-22 夏普株式会社 电源电路和具备该电源电路的显示装置
US7969235B2 (en) * 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7683700B2 (en) * 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US8154333B2 (en) * 2009-04-01 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuits, systems, and operational methods thereof
KR20100138146A (ko) * 2009-06-24 2010-12-31 삼성전자주식회사 고효율의 차지 펌프
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) * 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US20110148509A1 (en) * 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
EP2506432B1 (de) * 2011-04-01 2016-12-28 STMicroelectronics S.r.l. Pegelumsetzer
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US10250133B2 (en) * 2017-07-18 2019-04-02 Stmicroelectronics International N.V. Single-stage CMOS-based voltage quadrupler circuit
US11300988B2 (en) 2018-08-07 2022-04-12 Battery Savers Inc. Method and system to boost battery voltage

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US4954731A (en) * 1989-04-26 1990-09-04 International Business Machines Corporation Wordline voltage boosting circuits for complementary MOSFET dynamic memories
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Also Published As

Publication number Publication date
JP2755047B2 (ja) 1998-05-20
KR940006345A (ko) 1994-03-23
DE69321040T2 (de) 1999-05-20
JPH0614529A (ja) 1994-01-21
EP0576008B1 (de) 1998-09-16
EP0576008A2 (de) 1993-12-29
KR970005408B1 (ko) 1997-04-16
US5521547A (en) 1996-05-28
EP0576008A3 (de) 1995-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP