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DE69627954D1 - Herstellungsverfahren von Luftbrücker - Google Patents

Herstellungsverfahren von Luftbrücker

Info

Publication number
DE69627954D1
DE69627954D1 DE69627954T DE69627954T DE69627954D1 DE 69627954 D1 DE69627954 D1 DE 69627954D1 DE 69627954 T DE69627954 T DE 69627954T DE 69627954 T DE69627954 T DE 69627954T DE 69627954 D1 DE69627954 D1 DE 69627954D1
Authority
DE
Germany
Prior art keywords
manufacturing process
air bridges
bridges
air
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69627954T
Other languages
English (en)
Other versions
DE69627954T2 (de
Inventor
Mark Jon Loboda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69627954D1 publication Critical patent/DE69627954D1/de
Application granted granted Critical
Publication of DE69627954T2 publication Critical patent/DE69627954T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4821Bridge structure with air gap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5381Crossover interconnections, e.g. bridge stepovers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE69627954T 1995-10-23 1996-10-16 Herstellungsverfahren von Luftbrücker Expired - Fee Related DE69627954T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54707495A 1995-10-23 1995-10-23
US547074 1995-10-23

Publications (2)

Publication Number Publication Date
DE69627954D1 true DE69627954D1 (de) 2003-06-12
DE69627954T2 DE69627954T2 (de) 2004-02-19

Family

ID=24183250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627954T Expired - Fee Related DE69627954T2 (de) 1995-10-23 1996-10-16 Herstellungsverfahren von Luftbrücker

Country Status (6)

Country Link
US (1) US6268262B1 (de)
EP (1) EP0771026B1 (de)
JP (1) JPH09172066A (de)
KR (1) KR100415338B1 (de)
DE (1) DE69627954T2 (de)
TW (1) TW308719B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294455B1 (en) * 1997-08-20 2001-09-25 Micron Technology, Inc. Conductive lines, coaxial lines, integrated circuitry, and methods of forming conductive lines, coaxial lines, and integrated circuitry
US6709968B1 (en) * 2000-08-16 2004-03-23 Micron Technology, Inc. Microelectronic device with package with conductive elements and associated method of manufacture
US6670719B2 (en) 1999-08-25 2003-12-30 Micron Technology, Inc. Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture
EP1094506A3 (de) * 1999-10-18 2004-03-03 Applied Materials, Inc. Schutzschicht für Filme mit besonders kleiner Dielektrizitätskonstante
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
KR100772736B1 (ko) * 2000-03-13 2007-11-01 엔엑스피 비 브이 반도체 디바이스 제조 방법
US6798064B1 (en) * 2000-07-12 2004-09-28 Motorola, Inc. Electronic component and method of manufacture
US6413852B1 (en) * 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
US6449839B1 (en) * 2000-09-06 2002-09-17 Visteon Global Tech., Inc. Electrical circuit board and a method for making the same
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
DE10109778A1 (de) * 2001-03-01 2002-09-19 Infineon Technologies Ag Hohlraumstruktur und Verfahren zum Herstellen einer Hohlraumstruktur
DE10142201C2 (de) * 2001-08-29 2003-10-16 Infineon Technologies Ag Verfahren zur Erzeugung von Hohlräumen mit Submikrometer-Strukturen in einer Halbleitereinrichtung mittels einer gefrierenden Prozessflüssigkeit
JP3793143B2 (ja) * 2002-11-28 2006-07-05 株式会社シマノ 自転車用電子制御装置
EP1542261B1 (de) * 2003-12-10 2007-03-28 Freescale Semiconductor, Inc. Verfahren um ein Element herzustellen welches einen von magnetischem Material umgebenen elektrischen Leiter enthält
US7262586B1 (en) 2005-03-31 2007-08-28 Cypress Semiconductor Corporation Shunt type voltage regulator
JP5072417B2 (ja) * 2007-04-23 2012-11-14 株式会社東芝 半導体装置およびその製造方法
US7964442B2 (en) * 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
JP2013089859A (ja) * 2011-10-20 2013-05-13 Toshiba Corp 半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP2703773B2 (ja) * 1988-04-14 1998-01-26 シャープ株式会社 半導体装置の製造方法
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH02177550A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 半導体装置およびその製造方法
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
JPH04268750A (ja) * 1991-02-25 1992-09-24 Toshiba Corp 半導体集積回路
US5374792A (en) * 1993-01-04 1994-12-20 General Electric Company Micromechanical moving structures including multiple contact switching system
US5353498A (en) * 1993-02-08 1994-10-11 General Electric Company Method for fabricating an integrated circuit module
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5674758A (en) * 1995-06-06 1997-10-07 Regents Of The University Of California Silicon on insulator achieved using electrochemical etching
DE69726718T2 (de) * 1997-07-31 2004-10-07 St Microelectronics Srl Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

Also Published As

Publication number Publication date
EP0771026A3 (de) 1998-06-10
JPH09172066A (ja) 1997-06-30
EP0771026A2 (de) 1997-05-02
TW308719B (de) 1997-06-21
DE69627954T2 (de) 2004-02-19
US6268262B1 (en) 2001-07-31
KR100415338B1 (ko) 2004-04-13
KR970023839A (ko) 1997-05-30
EP0771026B1 (de) 2003-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee