DE602007001060D1 - Herstellungsverfahren für ein elektromechanisches Bauteil auf einem ebenen Substrat - Google Patents
Herstellungsverfahren für ein elektromechanisches Bauteil auf einem ebenen SubstratInfo
- Publication number
- DE602007001060D1 DE602007001060D1 DE602007001060T DE602007001060T DE602007001060D1 DE 602007001060 D1 DE602007001060 D1 DE 602007001060D1 DE 602007001060 T DE602007001060 T DE 602007001060T DE 602007001060 T DE602007001060 T DE 602007001060T DE 602007001060 D1 DE602007001060 D1 DE 602007001060D1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- sacrificial layer
- manufacturing
- flat substrate
- electromechanical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000407 epitaxy Methods 0.000 abstract 2
- 229910000927 Ge alloy Inorganic materials 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0073—Integration with other electronic structures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Pressure Sensors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0653975A FR2906238B1 (fr) | 2006-09-27 | 2006-09-27 | Procede de realisation d'un composant electromecanique sur un substrat plan |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602007001060D1 true DE602007001060D1 (de) | 2009-06-18 |
Family
ID=38051558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602007001060T Active DE602007001060D1 (de) | 2006-09-27 | 2007-09-25 | Herstellungsverfahren für ein elektromechanisches Bauteil auf einem ebenen Substrat |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7625772B2 (de) |
| EP (1) | EP1905734B1 (de) |
| JP (1) | JP2008114363A (de) |
| AT (1) | ATE430713T1 (de) |
| DE (1) | DE602007001060D1 (de) |
| FR (1) | FR2906238B1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2881416B1 (fr) * | 2005-01-31 | 2007-06-01 | St Microelectronics Crolles 2 | Microresonateur |
| JP2006352984A (ja) * | 2005-06-15 | 2006-12-28 | Tdk Corp | 圧電薄膜振動子およびその製造方法、並びにそれを用いた駆動装置および圧電モータ |
| FR2921916B1 (fr) * | 2007-10-09 | 2011-04-29 | Commissariat Energie Atomique | Composant electromecanique vibrant a l'echelle nanometrique ou micrometrique a niveau de detection augmente |
| CN101939906B (zh) * | 2007-12-11 | 2014-10-29 | 康奈尔大学 | 谐振体晶体管和振荡器 |
| FR2932788A1 (fr) * | 2008-06-23 | 2009-12-25 | Commissariat Energie Atomique | Procede de fabrication d'un composant electromecanique mems / nems. |
| FR2932923B1 (fr) | 2008-06-23 | 2011-03-25 | Commissariat Energie Atomique | Substrat heterogene comportant une couche sacrificielle et son procede de realisation. |
| FR2943654B1 (fr) | 2009-03-30 | 2011-08-26 | Commissariat Energie Atomique | Realisation d'un dispositif micro-electronique comportant un composant nems en silicium monocristallin et un transistor dont la grille est realisee dans la meme couche que la structure mobile de ce composant. |
| FR2973504B1 (fr) * | 2011-03-31 | 2014-01-10 | Commissariat Energie Atomique | Systeme de mesure a resonateurs electromecaniques, procede de fabrication d'un tel systeme et procede de lecture d'au moins deux resonateurs electromecaniques |
| ITTO20110995A1 (it) * | 2011-10-31 | 2013-05-01 | St Microelectronics Srl | Dispositivo micro-elettro-meccanico dotato di regioni conduttive sepolte e relativo procedimento di fabbricazione |
| DE102011089261B4 (de) * | 2011-12-20 | 2014-11-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transistorstruktur, Verfahren zur Herstellung einer Transistorstruktur, Kraftmesssystem |
| FR3026734B1 (fr) * | 2014-10-02 | 2023-01-06 | Commissariat Energie Atomique | Structure mecanique comprenant un actionneur et des moyens d'amplification mecanique et procede de fabrication |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH10223914A (ja) * | 1997-01-31 | 1998-08-21 | Aisin Seiki Co Ltd | 半導体マイクロマシンの製造方法 |
| FR2799305B1 (fr) * | 1999-10-05 | 2004-06-18 | St Microelectronics Sa | Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu |
| US6355498B1 (en) * | 2000-08-11 | 2002-03-12 | Agere Systems Guartian Corp. | Thin film resonators fabricated on membranes created by front side releasing |
| DE10064494A1 (de) * | 2000-12-22 | 2002-07-04 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist |
| FR2823032B1 (fr) * | 2001-04-03 | 2003-07-11 | St Microelectronics Sa | Resonateur electromecanique a poutre vibrante |
| US6736982B2 (en) * | 2001-06-15 | 2004-05-18 | Xiang Zheng Tu | Micromachined vertical vibrating gyroscope |
| DE10226027A1 (de) * | 2002-06-12 | 2003-12-24 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| FR2857952B1 (fr) * | 2003-07-25 | 2005-12-16 | St Microelectronics Sa | Resonateur electromecanique et procede de fabrication d'un tel resonateur |
| FR2872501B1 (fr) * | 2004-07-01 | 2006-11-03 | Commissariat Energie Atomique | Microresonateur composite a forte deformation |
| FR2881416B1 (fr) * | 2005-01-31 | 2007-06-01 | St Microelectronics Crolles 2 | Microresonateur |
| JP2007005909A (ja) * | 2005-06-21 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 電気機械信号選択素子、その製造方法およびそれを用いた電気機器 |
-
2006
- 2006-09-27 FR FR0653975A patent/FR2906238B1/fr not_active Expired - Fee Related
-
2007
- 2007-09-25 AT AT07117116T patent/ATE430713T1/de not_active IP Right Cessation
- 2007-09-25 EP EP07117116A patent/EP1905734B1/de not_active Not-in-force
- 2007-09-25 DE DE602007001060T patent/DE602007001060D1/de active Active
- 2007-09-26 JP JP2007249518A patent/JP2008114363A/ja active Pending
- 2007-09-27 US US11/904,859 patent/US7625772B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7625772B2 (en) | 2009-12-01 |
| EP1905734A1 (de) | 2008-04-02 |
| FR2906238A1 (fr) | 2008-03-28 |
| ATE430713T1 (de) | 2009-05-15 |
| US20080076211A1 (en) | 2008-03-27 |
| JP2008114363A (ja) | 2008-05-22 |
| FR2906238B1 (fr) | 2008-12-19 |
| EP1905734B1 (de) | 2009-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE, PARIS, FR |
|
| 8364 | No opposition during term of opposition |