DE3538065A1 - Fluessigkristall-anzeigeeinrichtung und verfahren zu ihrer herstellung - Google Patents
Fluessigkristall-anzeigeeinrichtung und verfahren zu ihrer herstellungInfo
- Publication number
- DE3538065A1 DE3538065A1 DE19853538065 DE3538065A DE3538065A1 DE 3538065 A1 DE3538065 A1 DE 3538065A1 DE 19853538065 DE19853538065 DE 19853538065 DE 3538065 A DE3538065 A DE 3538065A DE 3538065 A1 DE3538065 A1 DE 3538065A1
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- polycrystalline silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 91
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000005744 Teer Meer reaction Methods 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59224770A JPS61102628A (ja) | 1984-10-25 | 1984-10-25 | 液晶表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3538065A1 true DE3538065A1 (de) | 1986-07-10 |
Family
ID=16818946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853538065 Withdrawn DE3538065A1 (de) | 1984-10-25 | 1985-10-25 | Fluessigkristall-anzeigeeinrichtung und verfahren zu ihrer herstellung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS61102628A (ja) |
| CN (1) | CN1005170B (ja) |
| CA (1) | CA1269161A (ja) |
| DE (1) | DE3538065A1 (ja) |
| FR (1) | FR2572569B1 (ja) |
| GB (1) | GB2166276B (ja) |
| NL (1) | NL8502881A (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661320B2 (ja) * | 1990-03-29 | 1997-10-08 | 松下電器産業株式会社 | 液晶表示装置の製造方法 |
| JPH0611705A (ja) * | 1992-01-31 | 1994-01-21 | Sony Corp | 能動素子基板 |
| GB2265486A (en) * | 1992-03-11 | 1993-09-29 | Marconi Gec Ltd | Display device fabrication |
| TW281786B (ja) * | 1993-05-26 | 1996-07-21 | Handotai Energy Kenkyusho Kk | |
| JP3450376B2 (ja) * | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2791435B2 (ja) * | 1996-12-24 | 1998-08-27 | 株式会社日立製作所 | 液晶ディスプレイ装置 |
| EP1843194A1 (en) | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| TW202449481A (zh) | 2006-05-16 | 2024-12-16 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893269A (ja) * | 1981-11-30 | 1983-06-02 | Seiko Epson Corp | アクティブマトリクス基板の製造方法 |
| JPS5910988A (ja) * | 1982-07-12 | 1984-01-20 | ホシデン株式会社 | カラ−液晶表示器 |
-
1984
- 1984-10-25 JP JP59224770A patent/JPS61102628A/ja active Granted
-
1985
- 1985-10-09 CA CA000492586A patent/CA1269161A/en not_active Expired
- 1985-10-16 GB GB08525532A patent/GB2166276B/en not_active Expired
- 1985-10-22 NL NL8502881A patent/NL8502881A/nl not_active Application Discontinuation
- 1985-10-24 CN CN85108619.5A patent/CN1005170B/zh not_active Expired
- 1985-10-25 DE DE19853538065 patent/DE3538065A1/de not_active Withdrawn
- 1985-10-25 FR FR858515861A patent/FR2572569B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB8525532D0 (en) | 1985-11-20 |
| GB2166276B (en) | 1988-11-09 |
| GB2166276A (en) | 1986-04-30 |
| CN1005170B (zh) | 1989-09-13 |
| CA1269161A (en) | 1990-05-15 |
| JPH0543095B2 (ja) | 1993-06-30 |
| JPS61102628A (ja) | 1986-05-21 |
| FR2572569A1 (fr) | 1986-05-02 |
| NL8502881A (nl) | 1986-05-16 |
| FR2572569B1 (fr) | 1991-04-12 |
| CN85108619A (zh) | 1986-04-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |