DE19546962A1 - Metallisierungsstruktur und Flüssigkristallvorrichtung - Google Patents
Metallisierungsstruktur und FlüssigkristallvorrichtungInfo
- Publication number
- DE19546962A1 DE19546962A1 DE19546962A DE19546962A DE19546962A1 DE 19546962 A1 DE19546962 A1 DE 19546962A1 DE 19546962 A DE19546962 A DE 19546962A DE 19546962 A DE19546962 A DE 19546962A DE 19546962 A1 DE19546962 A1 DE 19546962A1
- Authority
- DE
- Germany
- Prior art keywords
- conductive material
- formation
- crystal device
- standard heat
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001465 metallisation Methods 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 28
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004481 Ta2O3 Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 229910009815 Ti3O5 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6312220A JPH08167608A (ja) | 1994-12-15 | 1994-12-15 | 配線構造および液晶素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19546962A1 true DE19546962A1 (de) | 1996-06-20 |
Family
ID=18026640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19546962A Withdrawn DE19546962A1 (de) | 1994-12-15 | 1995-12-15 | Metallisierungsstruktur und Flüssigkristallvorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08167608A (ja) |
| KR (1) | KR0164654B1 (ja) |
| DE (1) | DE19546962A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19733053A1 (de) * | 1997-07-31 | 1999-02-04 | Leybold Ag | Transparentes Substrat |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101054344B1 (ko) | 2004-11-17 | 2011-08-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP6173246B2 (ja) * | 2014-03-27 | 2017-08-02 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2750500A1 (de) * | 1977-11-11 | 1979-05-17 | Leybold Heraeus Gmbh & Co Kg | Verfahren zur herstellung von infrarotreflektierenden, fuer sichtbares licht weitgehend transparenten scheiben und durch die verfahren hergestellte scheibe |
| DE2407363C2 (de) * | 1973-02-16 | 1984-10-31 | Saint-Gobain Industries, Neuilly-sur-Seine | Halbreflektierende Verglasung und Verfahren zu deren Herstellung |
| DE3536821A1 (de) * | 1985-10-16 | 1987-04-16 | Standard Elektrik Lorenz Ag | Verfahren zur herstellung einer stromlos abgeschiedenen, loetbaren metallschicht |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620153B2 (ja) * | 1987-12-25 | 1994-03-16 | 鐘淵化学工業株式会社 | 光起電力素子 |
| JP2756841B2 (ja) * | 1989-10-13 | 1998-05-25 | 株式会社日立製作所 | 表示装置 |
| JPH04153623A (ja) * | 1990-10-18 | 1992-05-27 | Fuji Xerox Co Ltd | 配線構造 |
-
1994
- 1994-12-15 JP JP6312220A patent/JPH08167608A/ja active Pending
-
1995
- 1995-12-14 KR KR1019950049546A patent/KR0164654B1/ko not_active IP Right Cessation
- 1995-12-15 DE DE19546962A patent/DE19546962A1/de not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2407363C2 (de) * | 1973-02-16 | 1984-10-31 | Saint-Gobain Industries, Neuilly-sur-Seine | Halbreflektierende Verglasung und Verfahren zu deren Herstellung |
| DE2750500A1 (de) * | 1977-11-11 | 1979-05-17 | Leybold Heraeus Gmbh & Co Kg | Verfahren zur herstellung von infrarotreflektierenden, fuer sichtbares licht weitgehend transparenten scheiben und durch die verfahren hergestellte scheibe |
| DE3536821A1 (de) * | 1985-10-16 | 1987-04-16 | Standard Elektrik Lorenz Ag | Verfahren zur herstellung einer stromlos abgeschiedenen, loetbaren metallschicht |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19733053A1 (de) * | 1997-07-31 | 1999-02-04 | Leybold Ag | Transparentes Substrat |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960026902A (ko) | 1996-07-22 |
| JPH08167608A (ja) | 1996-06-25 |
| KR0164654B1 (ko) | 1999-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |