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DE112022002189T8 - Stützgestell, Stützvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents

Stützgestell, Stützvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements Download PDF

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Publication number
DE112022002189T8
DE112022002189T8 DE112022002189.6T DE112022002189T DE112022002189T8 DE 112022002189 T8 DE112022002189 T8 DE 112022002189T8 DE 112022002189 T DE112022002189 T DE 112022002189T DE 112022002189 T8 DE112022002189 T8 DE 112022002189T8
Authority
DE
Germany
Prior art keywords
producing
semiconductor component
support frame
support
support device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112022002189.6T
Other languages
English (en)
Other versions
DE112022002189T5 (de
Inventor
Hajime Ushio
Yuta Makino
Hirofumi Shiragasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Lapis Semiconductor Co Ltd
Original Assignee
Rohm Co Ltd
Lapis Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Lapis Semiconductor Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022002189T5 publication Critical patent/DE112022002189T5/de
Application granted granted Critical
Publication of DE112022002189T8 publication Critical patent/DE112022002189T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE112022002189.6T 2021-05-14 2022-03-31 Stützgestell, Stützvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements Active DE112022002189T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-082788 2021-05-14
JP2021082788 2021-05-14
PCT/JP2022/016525 WO2022239570A1 (ja) 2021-05-14 2022-03-31 支持ステージ、支持装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE112022002189T5 DE112022002189T5 (de) 2024-02-08
DE112022002189T8 true DE112022002189T8 (de) 2024-02-15

Family

ID=84028268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022002189.6T Active DE112022002189T8 (de) 2021-05-14 2022-03-31 Stützgestell, Stützvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements

Country Status (5)

Country Link
US (1) US20240079262A1 (de)
JP (1) JPWO2022239570A1 (de)
CN (1) CN117296141A (de)
DE (1) DE112022002189T8 (de)
WO (1) WO2022239570A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024204564A1 (ja) * 2023-03-30 2024-10-03 ローム株式会社 半導体装置の製造方法およびウエハ支持構造
WO2024204563A1 (ja) * 2023-03-30 2024-10-03 ローム株式会社 半導体装置の製造方法およびウエハ支持構造

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201957A (ja) * 1993-12-29 1995-08-04 Sony Corp ウェーハ・テープ・マウンタ
US20100103402A1 (en) * 2007-02-26 2010-04-29 Dai Nippon Printing Co., Ltd Work stage of exposing apparatus, exposing method and method of manufacturing a structure
JP5597502B2 (ja) * 2009-09-30 2014-10-01 京セラ株式会社 吸着用部材およびこれを用いた吸着装置、並びに光照射装置および荷電粒子線装置
JP2012164839A (ja) 2011-02-08 2012-08-30 Lintec Corp 板状部材の支持装置及び支持方法、並びに、シート剥離装置及び剥離方法
JP2014241357A (ja) * 2013-06-12 2014-12-25 レーザーテック株式会社 基板保持装置、及び光学装置、及び基板保持方法
JP6625462B2 (ja) * 2016-03-23 2019-12-25 ラピスセミコンダクタ株式会社 半導体製造装置および半導体製造方法
WO2017179296A1 (ja) * 2016-04-14 2017-10-19 三菱電機株式会社 基板保持装置
JP7065650B2 (ja) * 2018-03-12 2022-05-12 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7437899B2 (ja) * 2019-09-20 2024-02-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7370228B2 (ja) 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JPWO2022239570A1 (de) 2022-11-17
WO2022239570A1 (ja) 2022-11-17
DE112022002189T5 (de) 2024-02-08
US20240079262A1 (en) 2024-03-07
CN117296141A (zh) 2023-12-26

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Legal Events

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R012 Request for examination validly filed
R083 Amendment of/additions to inventor(s)