DE102008010784B3 - Heat removal technology polyvalent heat transfer device for at least one semiconductor device and associated test and operating method - Google Patents

Abstract

The invention relates to a heat transfer device (15) having at least one semiconductor component (10) and a heat conducting body (20). The semiconductor device has a heat source region including, in operation, heat generating pn junctions. The heat-conducting body (20) has at least one receiving surface (21) for material-bonding connection with a contact surface (11, 12) of the semiconductor component (10) and at least one channel structure (30, 31). The heat transfer device (15) is characterized in that the channel structure (30, 31) is arranged completely outside a projection (22) of the heat source region which extends perpendicular to the contact surface (11, 12). The heat transfer device is also characterized by at least one attachment surface (23) of the heat conduction body (20), which is provided for a conductive heat transfer to a, at least one heat transfer structure (35) having heat removal body (98). During operation of the heat transfer device (15), at least one coolant selectively flows at least through the channel structure (30, 31) of the heat conduction body (20) or through the heat transfer structure (35) of the heat removal body (98).

Description

The The invention relates to a heat transfer device for at least a semiconductor component, in particular at least one laser diode element, according to the preamble of claim 1

Semiconductor devices generate heat during operation essentially in the area of their construction-specific functional principle-related Heat sources, which are located in the region of their active in operation pn junctions, wherein the pn junction also a thin, may contain electrically insulating zone.

One Laser diode element, as an example of a heat-generating semiconductor device, with one in the pn junction area arranged electro-optically active, light-generating and -führenden zone generally has at least one epitaxial-side and at least a substrate-side contact surface, those on opposite sides Pages of the active zone are arranged. Since the epitaxial side contact area the next to light also heat-producing active zone is generally much closer than the substrate side Contact area, is a laser diode element standard epitaxial side over a epitaxy side mounted heat sink cooled by it with its epitaxial side contact surface in cohesive connection with the receiving surface a Wärmeleitkörpers attached is. This is in the pn junction generated heat over the contact area or the contact surfaces and over the receiving surface delivered to the heat-conducting body.

Wärmeleitkörper and Laser diode element form together with the necessary elements for operation for electrically contacting the laser diode element, a diode laser component, provided the heat conducting body the requirement for a company-specific sufficient derivation and / or discharge of Heat of the Has laser diode element.

Within one for the operation of the diode laser component provided heat transfer device is the heat dissipation in principle with at least one convective heat transfer by at least a heat transfer structure to a liquid or gaseous coolant completed.

in the The prior art is the heat-conducting body either the conductive cooling, being as continuous solid accomplished will and the heat on one opposite the receiving surface enlarged connection area spreads over the the heat delivered to a heat sink becomes; or he serves the convective cooling, wherein a liquid cooling medium flowed through Channel structure, for example microchannels, below the laser diode element, this means in the range of a projection of the laser diode element in the contact surface perpendicular Direction, are arranged in the heat conducting body and as a heat transfer structure serve.

Such a heat transfer device is known from the published patent application DE 100 47 780 A1 known.

The location of microchannels in such, designed as a Mikrokanalwärmesenke Wärmeleitkörper is according to the prior art heat removal technically useful, because the area in which the heat transfer takes place in the circulating cooling medium, the heat source with respect to their heat input surface in the heat-conducting directly opposite and essentially no, causes the thermal resistance increasing deflection or narrowing of the heat flux in the area of the conductive heat transport. The same reasoning applies to gaseous cooling media. So is from the disclosure WO 2004/061 957 A1 a heat transfer device is known in which the heat is released via a channel structure below the laser diode element to a gaseous cooling medium.

In contrast, in the published patent application GB 2 412 476 A discloses a generic heat transfer assembly on a channel structure, which is arranged for non-thermal reasons completely outside the projection of a heat-generating liquid crystal panel in their direction perpendicular to their contact surfaces, because a lying in this projection channel structure or flowing in this projection cooling medium the properties of the liquid crystal panel passing through light would adversely affect.

at the generic heat transfer devices for semiconductor devices However, neither the heat source nor the heat source connected Wärmeleitbereich the heat transfer device Such optical transparency, so that in their convective cooling no Arrangement of the heat transfer structure Completely outside the said projection is required.

In the purely conductive cooling case, however, the heat-conducting body in principle has no possibility of convective heat release to a coolant. The convective heat transfer to the coolant must be provided from the outside by a suitably designed heat removal device, which receives the heat from the heat conducting body and a heat transfer structure to a coolant emits.

the across from lies in a convectively cooled Wärmeleitkörper the heat to a coolant in the heat-conducting body itself in front.

Wärmeleitkörper according to the state The technique can be used either conductively or convectively cooling. Conductive cooling Wärmeleitkörpern missing the channel structure or missing the microchannels for convective cooling and at convective cooling Wärmeleitkörpern lie the microchannels that the heat transfer fluid to lead, in a heat flow path, the in the case of purely conductive use of the convectively cooling heat-conducting body, one is conductive to the conductive one cooling Wärmeleitkörpern clear increased would cause thermal resistance. Often, however, is at the manufacture of a heat transfer device, in particular a diode laser component, and before its eventual integration in a system of several diode laser components and / or in a Module not yet known which heat removal paths and / or technique ultimately chosen by the user will be, especially if the choice of two different Coolant, For example, air and water should be done.

It Object of the invention, a heat transfer device with to provide a heat conducting body, wherein the heat conducting body for the cooling of a Semiconductor component universal and cooling technology polyvalent, this means convective and / or conductive cooling, is usable. Furthermore, during the manufacture of the heat transfer device a method for performing Functional tests to be carried out during a test operation of the Semiconductor device is a different from the application operation Heat transfer process used, which is in terms of its thermal resistance only insignificant or at most slight different from the heat transfer method used in the application mode.

The The object is achieved with the features of claims 1 and 63 to 65.

advantageous Embodiments are the subject of dependent claims.

According to claim 1 has a heat transfer device at least one semiconductor component and a heat-conducting body. The semiconductor device Here is an electrical, electro-optical, opto-electrical or opto-optical component, the at least one in operation of the Component heat-producing pn junction wherein the function of the heat transfer device is independent of the nature of the mechanism of heat generation. As a particularly advantageous the heat transfer device for laser diode elements or high power light emitting diodes. The following will be representative for high power light emitting diodes referred to laser diode elements.

Of the Wärmeleitkörper the Heat transfer device has at least one receiving surface for cohesive Connection with at least one contact surface of at least one semiconductor component on. Dependent of the semiconductor device and the intended field of use various configurations of the receiving surface conceivable. The following will be For reasons of simplification, in part only spoken of the receiving area. In order to but also meant the option of multiple recording areas be. For cooling a plurality of semiconductor elements, for example of individual light-emitting diodes, the light in different frequency ranges of the visible color spectrum emit, or laser diode elements, the light in different frequency ranges In addition, it can also emit. Near infrared and / or ultraviolet be advantageous to provide multiple receiving surfaces on a single heat conducting body. Also, the shape, texture and the material of the receiving surface can depending on the mounting surface of the semiconductor device vary.

The Semiconductor device is by means of one of a variety of different potential Connection method with the receiving surface of the Wärmeleitkörpers cohesively with the receiving surface connected to the heat conducting body.

The cohesive Compound is the prerequisite according to the invention for one optimal heat transfer between the semiconductor device and heat conducting body, because non-material connections always on a disabled by cavity inclusions heat transfer Suffer.

To the preferred cohesive Connection method counts especially soldering, a corresponding pretreatment of the receiving surface of the Wärmeleitkörpers and / or the mounting surface of the semiconductor device requires. To these pretreatments counting Oberflächeneinebnungsverfahren, Cleaning method and method for coating with adhesion-promoting, diffusion-limiting, protected and / or wetting-promoting Materials, in particular metallic nature. The lot itself is applied to one of the connection partners before the connection process or is introduced separately between the connection partners.

Heat transfer devices have proved to be particularly advantageous, the laser Dio The elements are attached to the epitaxial-side contact surface in the region of the receiving surface of the Wärmeleitkörpers. Of course, a laser or light-emitting diode element can also be arranged on the substrate side on the receiving surface of the heat-conducting body.

Of the Heat-conducting body has also as a heat transfer structure at least one channel structure. The term "channel structure" includes all Types of cavities in the heat-conducting body, in the a liquid coolant introduced and made a liquid coolant dissipated can be. These include first a simple channel in the form of a continuous bore in the heat conducting body and beyond expressly and in particular also all types of cavity structures that have a for efficient convective heat transfer enlarged surface in one have selective region of the Wärmeleitkörpers ,. Such cavity structures are, for example, arrangements of single and / or branching consciously positioned (micro) channels, for example manufactured by layering plates with recesses, porous structures with random Cavity distribution, for example in sintered bodies, pore channels, and rows of cooling fins or cooling column fields on an inner surface the Wärmeleitkörpers. The Channels can be used for Example be formed by recesses or etching. to Charging the duct or duct structure with a liquid coolant The heat-conducting body preferably has at least one inlet opening which communicates with the channel or the channel structure. For the derivation of the liquid refrigerant From the channel or the channel structure, the heat-conducting body preferably at least a drain hole which communicates with the channel or the channel structure. Liquid, which flows through the channel structure of the Wärmeleitkörpers, which takes in operation of the semiconductor device generated heat up and leading this subsequently from.

The Heat transfer device is characterized in that the heat-conducting body both convective cooling as also conductive cooling use is. This is achieved according to the invention by that at least one channel or channel structure completely outside that of a heat source projection extending perpendicular to the contact surface of the component-specific functional principle-related integral heat source region of the with the heat-conducting body in material-fit Compound semiconductor device is arranged and thus not in the area of the main heat flow in the purely conductive cooled Case lies. The named heat source area comprises all used in the operation of the semiconductor device pn junctions and with it the main heat sources of the semiconductor device. The expansion of the heat source area may be minimal on the smallest possible inclusion volume for all heat-generating pn junctions in the semiconductor device restrict or completely over that extend entire volume of the semiconductor device. In existence of a plurality of semiconductor devices, the heat source region according to the invention on the pn transitions from two or more semiconductor devices extend or at most completely over, all volume of semiconductor devices.

With the inventive arrangement the channel or the channel structure completely outside of said heat source projection according to the invention let yourself in the conductively cooled Achieve thermal resistance that is only slightly different from the a heat transfer device deviates, the heat dissipation arrangement no cavities - especially no coolant-carrying (micro- or pore) channels. Since the in itself slightly less thermally conductive, because provided with cavities Area for forced convective heat transfer preferably completely near the recessed from the forced convective heat transfer in fluid cavities Area are introduced into the heat conducting body can, is even in the case of convective cooling of the Wärmeleitkörpers only a little higher thermal Resistance to be expected as in Mikrokanalwärmesenken after the state of Technology.

By a complete one Abandonment of channels or channel structures in the heat source projection of the semiconductor element in the heat conducting body the thermal resistance for a heat flow through the Wärmeleitkörper at least minimized locally. However, this is not a waiver of channels or channel structures to be confused in the remaining heat conducting body. Only for the conductive cooling particularly important area - the Area within the heat source projection - is from channels or channel structures free.

Next for cooling It is also desirable that no channel structures be used other cavities and / or impurities are present in the projection area; and has up to a material-related possible residual porosity the heat conducting body preferably no cavities which lie within the projection.

Regarding the connection between the receiving and contact surface is to emphasize that the cohesive connection the receiving surface of the Wärmeleitkörpers with the contact surface of the semiconductor device may consist of a single joint zone, wherein the receiving surface of the heat conducting body in substantially parallel to the contact surface of the semiconductor device is.

On the other Seites can the cohesive Connection of the receiving surface the Wärmeleitkörpers with the contact surface of the semiconductor component have an intermediate body, which has both a first joint zone with the receiving surface the Wärmeleitkörpers cohesively connected is as well over one second joining zone with the contact surface the semiconductor device is materially connected.

there can the first and the second joining zone are substantially parallel to each other and to each other Sides of the intermediate body be arranged. The first and second joining zones may also be substantially one another be arranged vertically. So are the contact surface of the Semiconductor component and the receiving surface of the Wärmeleitkörpers substantially perpendicular arranged to each other, wherein the heat-conducting body completely outside the heat source projection of the semiconductor device may be.

there it is only a question of the order of the individual joining steps, whether the intermediate body a Be part of the Wärmeleitkörpers can: becomes the intermediate body in a first joining step cohesively connected to the semiconductor device, and becomes this composite of semiconductor component and intermediate body in a second Joining step cohesively with connected to the heat conducting body, so can the intermediate body as a separate body to be viewed as. If the intermediate body, however, in the first joining step connected to the heat conducting body, so can the intermediate body considered as part of the Wärmeleitkörpers be, in which case the receiving surface for cohesive connection with the contact surface of the semiconductor component is arranged on the intermediate body. Regarding the geometric arrangement of the bodies to each other is the result independently from the order of the joining steps. In all cases is the channel structure of the heat conducting body outside the heat source projection arranged of the semiconductor device.

a essential, manufacturing technology, advantage of the invention, that one possible Cover the channel structure away from the projection of the semiconductor device does not have to be electrically or thermally conductive because the cover is not necessarily heat must conduct from the semiconductor device in the channel structure. Different as in the prior art, in the channels for unhindered heat absorption lie in the projection of the semiconductor device and thus necessarily a cover between the channel structure and the semiconductor device for Protection of the semiconductor device from contact with the coolant must be present, comes the invention also entirely without a cover of the channel structure, if coolant supply and dismantling body directly connected to the channel structure and attached to the heat conduction body.

The Heat transfer device according to the invention is additional characterized in that the heat-conducting body at least one attachment surface for a conductive heat transfer has at least one heat dissipation body.

Of the Heat removal body can in turn as part of a heat dissipation device conceived be with the heat conductor in thermal connection is, wherein the heat dissipation body, the heat, which it receives from Wärmeleitkörper, via a Heat transfer structure to a coolant, which flows through the heat transfer structure. In order to serves the heat dissipation body according to the invention a to the heat conducting alternative or additional Heat dissipation.

there can heat transfer from the heat-conducting body the heat sink both directly (directly) and without another intermediate body as well as indirectly (indirectly) over one or several intermediate bodies respectively. For example, a heat receiving body, the is in direct contact with the heat conducting body, the heat spread and spread spread to the heat dissipation body.

Prefers is the thermal connection between the connection surface of the Wärmeleitkörpers and the heat transfer structure the heat dissipation body consistently cohesively. ever by number of intermediate bodies are in this case a (no intermediate body) or a plurality of (one or more intermediate body) joining zone (s) between the heat conducting body and the heat dissipation body.

A cohesive Connection is the best condition for optimal heat transfer between Wärmeleitkörper and Heat dissipation body, because non-cohesive Connections always at a hampered by voids Heat transfer Suffer.

Now can by a cohesive Connection of heat dissipation body and Wärmeleitkörper the Heat removal body as Part of the Wärmeleitkörpers considered become. Essential to the invention in this context is the fact that both bodies are before the connection process separately present and both bodies independently from each other the heat conduction to a specially assigned to each heat transfer structure for a convective heat transfer to a coolant can guarantee.

In case of using a heat-free Zenden heat-absorbing body as an intermediate body, the attachment of the heat-dissipating body on the heat-absorbing body need not necessarily be cohesive with sufficient heat spread. This is particularly true when a heat input surface of the heat receiving body, which is in material connection with the connection surface of the heat conducting body, is smaller than a heat discharge surface of the heat receiving body, which is in contact with the heat dissipation body.

According to the invention Heat dissipation body of the Heat transfer device an alternative to the heat-conducting body or optional heat sink with convective heat dissipation. The term heat sink comprises in the sense of the invention, all kinds of devices, at least one for heat transfer to a streaming one liquid or gaseous coolant specially designed heat transfer structure having a coolant flow forming the Coolant circuit can be open or closed. These heat sinks include, for example, open ones aircooled ribcooler and water-carrying microchannel heat sinks. Evaporative cooling equipment, for example spray cooler or heat pipes, can heat sink be with integrated closed coolant circuits, the heat in general, to a heat sink with heat transfer to an open coolant circuit submit. Alternatively, combinations of the described heat sinks are possible.

Between the heat-conducting body and the heat transfer structure of the heat dissipation body can Peltier element or more electrically serial to a Peltier module and / or Peltierelemente connected in parallel, which are a introduce electrically generated temperature difference in the heat transfer device. Particularly preferred is a Peltier module, which integrates into the heat dissipation body is.

The heat dissipation from the heat transfer device according to the invention happens according to the invention by the heat transfer to at least one coolant.

The Heat transfer device according to the invention allows a depending on the case selectable, sufficient heat dissipation for cooling the Semiconductor device via the heat-conducting body with Release of heat to a first, preferably liquid, Coolant, for example, water, or over the heat removal body with Release of heat to a second coolant, for example air.

The Invention allows thus a universal use of Wärmeleitkörpers on the one hand to the conductive Cooling, by the heat release the heat dissipation body characterized and, secondly, convective cooling caused by heat dissipation to the coolant flowing through the heat conducting body is characterized, depending on Application area and / or user request. Another advantage of Combination of conductive and convective cooling of the Wärmeleitkörpers allows, for example in the case of insufficient convective cooling of the Wärmeleitkörpers in addition to a possible convective cooling to resort in the heat removal body and thus both convective heat transfer paths use at the same time, whereby a better heat dissipation property achieved becomes. With that you can both heat removal paths - those in the heat conducting body and that in the heat dissipation body - for heat dissipation to both coolants be used. The heat transfer device is particularly efficient when both the first coolant as well as the second coolant a liquid, preferably water, is.

Furthermore allows the heat transfer device the use of one of its form after simple and inexpensive to produce Wärmeleitkörpers, the for sufficient convective cooling for semiconductor devices is usable, the connection of a more complex heat transfer structure having heat dissipation body on the Wärmeleitkörper the heat dissipation properties exceed the Wärmeleitkörpers can.

For example the heat sink can a Contain channel structure that lies in the heat source projection. Furthermore the channel structure of the heat dissipation body can have channels in at least one dimension perpendicular to the flow direction or to the channel longitudinal axis are smaller than the smallest dimension of channels in the channel structure of the channel Thermal conductor. Furthermore can the channel structure of the heat dissipation body more channels own as the channel structure of the Wärmeleitkörpers. The last two properties taken together ensure that an enlarged heat input surface into the coolant and thus at the same flow rate for one particularly low thermal resistance of the heat transfer device. In fact, can the thermal resistance of the heat transfer device in the condition of conductive cooling be lower in the Wärmeleitkörpers as in the state of convective cooling the Wärmeleitkörpers alone.

The heat source projection of the semiconductor component preferably comprises the entire region of the heat conduction body, which is formed on the opposite side of the contact surface. in the special be pointed out that the width of the semiconductor device does not have to match the width of the heat conduction, so that of course, a channel structure laterally - ie right and left or front and rear - may be formed in the heat conduction without lying in the projection.

in principle the location of the connection surface is independent of the position of the contact surface and the receiving surface.

at an advantageous embodiment, the connection surface is the conductive heat transfer at the heat removal body at least in sections within the projection of the at least one attached to the heat conducting body Semiconductor device, so that the heat without detour, so as possible directly, transferable to the heat dissipation body is. An elevated one thermal resistance due to deflection or narrowing of the heat flow waist can be prevented.

Lies the connection surface, for example, for structural and / or design reasons, vertically to the contact area, so this situation requires a deflection of the heat flow, preferably with a heat spread accompanied. Independently from a heat spread causes a heat flow with deflection always a higher thermal Resistance as in heat flow without deflection. The decision for the thermally conductive unfavorable heat deflection represents the advantages of the invention of the heat transfer device but not in question: even if after a deflection of the heat flow the heat partly be guided through the channel structure in the heat conducting body, However, the deflection area in the heat-conducting body is free of cavities and allowed a deflection without thermally conductive Restrictions, the above go beyond the actual redirection.

Preferably the area of the heat conducting body is free of cavities, over the the essential part of the heat flow from the receiving surface to the connection surface extends. Formulated geometrically, this means that at each angled to the contact surface oriented connection surface the heat source projection in the heat conducting body over the Semiconductor device out in the direction of the connection surfaces up to the connection surface extends.

The described heat transfer device is for cooling designed by a variety of different semiconductor devices. As already indicated, the arrangement is particularly advantageous for laser diode elements suitable, such as laser diodes or single-laser bars. Further heat sources in addition to edge and surface emitting Laser diodes or laser diode arrays are light emitting diodes, semiconductor switching elements and optically pumped semiconductor laser and sunlight absorbing Solar cells, wherein the semiconductor material both inorganic and can also be organic. in principle is the heat transfer device but for cooling suitable for all types of components.

When Also particularly advantageous is an arrangement of the receiving surface for the cohesive assembly shown by edge-emitting laser diode elements having a common Edge with an angled towards her frontal face of the Having heat-conducting body, the light exit surface of the laser diode element aligned parallel to the front end face is and approximately with the face lies in one plane. A front surface inclined to the receiving surface allows the unrestricted Propagation of the beams emitted by the laser diode element at least in sections of the beam, in the beam path before or during the beam shaping by a first, the light emitting surface downstream, optical element are arranged. In addition, also can in light emission direction on the side facing away from the receiving surface of the end face over the receiving surface out extending portions of the Wärmeleitkörpers a channel structure according to the invention for convective heat transfer contain.

Of the at least one channel in the heat sink is preferably in a region below the receiving surface plane near the heat input area arranged.

Prefers a channel structure consists of a plurality of channels, the at least in sections, an oblong Expansion in the direction of a channel longitudinal axis as a reference axis for alignment of the channel section.

A possible Design of the channels a channel structure is perpendicular to the receiving surface arranging the Channels. Here, the heat-conducting body indicates the top, so at the receiving surface, an inlet opening and at the bottom, ie in the area of the connection surface, one drain hole on. A channel that couples the two openings, extends exclusively in a plane, the plane through both openings and perpendicular to receiving surface and connection area runs.

The inlet and outlet openings can be reversed, whereby the flow direction of the coolant turns over. Alternatively, the inlet and outlet openings can not only on each opposite sides of the heat-conducting body but also on be arranged only a single side of the Wärmeleitkörpers.

at the training of several channels in a Wärmeleitkörper allows a parallel arrangement of the channels forming a plurality of channels in a very small space. Under the parallel arrangement of the channels Here is the parallelism the levels that run through each channel. The parallelism of the channels is limited not only on the vertical extent, but also can up Channels, in different horizontal, parallel to the receiving surface, Levels are formed, relate.

Everyone Channel or each channel structure preferably has at least one Inlet and at least one drain for the supply or discharge of a refrigerant are usable. To the integration of the heat transfer device in a Coolant circulation system To facilitate, it is advantageous to have multiple channels in one Wärmeleitkörper the inlet or sequence to a common feed and / or a common Summarize process. Such a common inlet or outlet can here by additional channels formed in the heat conducting body be. In addition, a common feed has a particularly advantageous and expiration, as easily through a single inlet and outlet opening all channels with a coolant source or sink are coupled.

Of the Wärmeleitkörper is Made from a single or a variety of different materials. For a particularly good heat dissipation property to reach, is in the choice of materials to a low thermal Resistance and a good thermal conductivity to pay attention. The material must also allow the formation of the channel structures. As a particularly advantageous have become heat-conducting body Copper, diamond or a carbon composite proved. Copper, for example, also offers the advantage of being electrically conductive and thus allows the semiconductor device mounted thereon with to supply electricity. Diamond has the highest thermal conductivity of all known solid in all three directions. Carbon composites, for example Diamond-metal composites have the advantage that their thermal Expansion coefficients can be adapted to those of the semiconductor device, what a mechanically low-tension cohesive connection of the semiconductor device with the heat conducting body allows.

At become the heat conducting body special requirements. The heat source projection in the heat conduction body is free of channel structures and preferably free of voids, while in the remaining area of the heat conducting microchannels for the convective cooling are formed.

When Therefore, the formation of the heat-conducting body is particularly advantageous an L-shaped basic body, the receiving surface on the end surface the shorter one Leg is arranged and parallel to the receiving surface inner surface of the longer Thigh to the cohesive Fixing a laminated body serves, in which recesses introduced at least in a first layer are that with adjacent second and third layers at least form a closed channel structure in sections, by the coolant guided can be.

The with the liquid cooling medium wetted surfaces of the heat transfer and / or discharge body can at least partially provided with at least one protective layer be less erosion and / or susceptible to corrosion as the base material of the heat conducting body or the basic material components of the material forming the cooling channels. The protective layers can electrically conductive or be largely electrically insulating. In the case of an electric largely insulating protective layer, covering the entire area, the with the liquid cooling medium wetted surfaces of the heat sink and / or discharge body extends, is the liquid cooling medium across from an electrical potential that may be present at the heat conductor and / or discharge body for the electrical connection to the semiconductor device, separated. Even highly electrically conductive cooling media such as service water or seawater can here if necessary for cooling be used without a potential electrochemical corrosion of the Heat transfer structure to cause.

As already indicated several times, the heat-conducting body combines a number of functions. The thermal function, namely the derivation of the generated heat of the semiconductor device, has already been explained in detail several times. Furthermore, a heat conducting body, which is at least partially made of an electrically conductive material, at the same time for electrical contacting of the semiconductor element usable and thus can supply the semiconductor element with electric current. Preferably, the channel structure is electrically isolated from the contact surface to prevent unwanted electrochemical processes with the coolant. If the channel structure is introduced into an electrically conductive main body, either the inner surfaces of the channel structure wetted by the coolant can carry an electrical insulation layer or the main body can bear on at least one outer side facing the receiving surface. Alternatively, the required electrical insulation by an introduced into the material connection of the receiving surface with the contact surface electrical Isolation layer can be achieved. If the heat-conducting body consists of an electrically insulating or electrically insulated base body, then either an electrical conductor is provided on the base body or an electrical conductor is to be inserted as an intermediate body into the integral connection between the receiving surface and the contact surface.

Already the heat conducting body alone also offers the mechanical function of the holder of the semiconductor device, which - as explained below - brings out an outstanding property of the heat transfer device essential to the invention:
With regard to the stations of the heat flow in the heat transfer device, the heat-conducting body can be regarded as a primary heat sink in convective cooling use and the heat removal body as a secondary heat sink, if the heat removal body undergoes convective cooling.

The Heat transfer device according to the invention now allows an advantageous method (claim 63) for commissioning and for testing semiconductor devices in an intermediate step while their integration into the heat transfer device. This will be first in a first step, a cohesive connection of the semiconductor component equipped with the heat-conducting body. Subsequently is or will be in a second step, the inlet opening or the inlet openings or the common inlet of the channel structure with a liquid source and the drain hole or discharge openings or the common drain of the channel structure with a fluid sink connected, allowing a circulation of liquid in the heat conducting body and an operation of the Wärmeleitkörpers as primary heat sinks is possible. Thereafter, functional tests of the at least one semiconductor device carried out, wherein at least one parameter is detected in the form of a measured value.

In order to For example, the semiconductor device may already be on the heat-conducting body as the primary heat sink be operated and tested without the primary heat sink thermally to one, for him in a later Stage of construction provided, secondary heat sink - that is the heat dissipation body - is connected. This condition allows unsuitable semiconductor devices to be timely when needed before and from further processing in a third step, namely the Connection to the secondary Heat sink excluded.

diode laser components have in the following a heat conducting body and one or more laser diode elements. Especially at the Compilation of several diode laser components for an arrangement consisting of several diode laser components in which the diode laser components attached to a common heat dissipation body It is advantageous if all diode laser components are similar Have properties such as an approximate same operating point (for example, an approximately equal performance at same current and / or an approximate same emission wavelength at the same current). Here you can the laser diode elements on a respective own heat conducting body or arranged on a common heat conducting body be. The inventive method allows such a selection and compilation of a Variety of diode laser components before their cohesive connection to a common heat sink, from the diode laser components after assembly not harmless - let alone because without residue - removed can be.

there At the end of all assembly steps, the convective heat removal must be carried out intended channel structure in the heat conducting body not more necessarily be usable. It is sufficient for the purposes of the invention that to the convective - in particular forced convective - heat dissipation provided channel structure in the heat-conducting body in Course of the process steps for the preparation of the heat transfer device and measuring the laser diode element at least until finally chosen application at times for convective cooling the laser diode element is usable during operation.

Of the Thermal conductor is after successful trial operation of the semiconductor device, the it is mounted over its connection area for one Conductive heat transfer - also called Wärmeabflußfläche - preferably cohesively a heat dissipation device attached with a heat dissipation body, the for the convective heat dissipation is trained.

Preferably is the local convective heat dissipation specially designed and exceeded for forced convective heat dissipation in terms of its heat dissipation efficiency preferably that of the heat conducting body.

One Advantage of the invention is thus that a semiconductor device with a heat-conducting body, in particular a diode laser component, in an intermediate production step exclusively by convective cooling sufficiently cooled so that it can be operated and tested without resorted to another heat sink becomes.

Alternatively, the heat transfer device also allows a (test) method (claim 64) that exclusively uses the conductive cooling property used of Wärmeleitkörpers. In this case, a convective cooling heat removal device is releasably, preferably non-positively, attached to the connection surface of the heat conduction body before functional tests are carried out for at least one semiconductor component. During operation of the semiconductor device, at least one parameter is detected.

by virtue of the sufficient conductive cooling is during of the test operation dispensed with the convective cooling in Wärmeleitkörper.

hereby is a testing of the semiconductor device under certain circumstances feasible, in which a convective cooling the Wärmeleitkörpers not given is, for example, due to lack of connections for the coolant supply and / or removal.

To the implementation the functional test, the connection with the heat dissipation device is released and the Wärmeleitkörper invention in conjunction brought to the heat dissipation body.

Of course you can the heat dissipation device be identical to the heat dissipation body.

Of the Wärmeleitkörper the Invention allows both the operation of the semiconductor device in exclusively more conductive as well as exclusively convective cooling. By the arrangement of the channels or the channel structure outside the Heat source projection of the semiconductor element are the heat dissipating properties only at low level worse than with a heat conducting body, the especially for the conductive or especially for the convective cooling is trained.

at Function tests with an extremely high load on the semiconductor components is above average heat generation to count. In such a case is through a convective and simultaneously conductive cooling ensures that the semiconductor device is sufficiently cooled and so that from damage protected is. Because in the actual Use of the semiconductor device such a high load over a longer Period rarely or never occurs is the combination of the two cooling methods later no longer necessary and you are limited to one of the two Heat dissipation method. The invention thus allows the performance of functional tests over the normal load of a semiconductor device go beyond.

To the parameter used in the test mode operation of an electro-optical Component, in particular a laser diode element, preferably in the form of a measured value detected will count the electrical operating current, the electrical operating voltage, the emitted radiation power and the spectrum of the emitted Radiation.

Based Figures become embodiments closer to the invention explained. Show it:

1a to 1k ' the sketchy plan views (uncoated), side views (simply painted) and front views (twice painted) of different variants of embodiments of the heat conducting body in a heat transfer device according to the invention with an edge emitting laser diode bar as a heat source;

1l the side view of a first embodiment of the heat transfer device with a laser diode bar as a heat source;

1m the top view of the first embodiment;

2a the front view of a second embodiment of the heat transfer device with an edge emitting single laser diode as a heat source;

2 B the top view of the second embodiment;

3a the top view of a third embodiment of the heat transfer device with three LEDs as heat sources;

3b the side view of the third embodiment;

4a the central cross section through an exploded view of a first variant of a fourth embodiment of the heat transfer device, in which the coolant supply and removal takes place in or out of the heat conducting body via a connection body on the side facing the semiconductor device of the heat conducting body;

4b the central cross section through the representation of the first variant of the fourth embodiment in the mounted state;

4c the central cross section through an exploded view of a second variant of the fourth embodiment of the heat transfer device, in which the coolant supply and removal takes place in and out of the heat conducting body via a heat receiving body on the side facing away from the semiconductor device of the heat conducting body;

4d the central cross section through the representation of the second variant of the fourth Ausfüh example in the assembled state;

5a the top view of the first variant of a Wärmeleitkörpers a fifth embodiment of the heat transfer device, in which the heat source facing surface away from the heat source, a series of elongated recesses are introduced;

5b the top view of an electrically insulating insulating plate with two openings as a component of the fifth embodiment of the heat transfer device;

5c the top view of a formed by applying the insulating on the first variant of the heat conducting first variant of a subassembly of a first variant of a diode laser component of the fifth embodiment of the heat transfer device;

5d the central cross section through a first variant of a diode laser component of the fifth embodiment of the heat transfer device according to the invention;

5e the top view of an electrically insulating composite body as a component of a second variant of the fifth embodiment of the heat transfer device, in the surface of a series of elongated recesses are introduced;

5f the top view of a composite of insulating and the electrically insulating composite body as a component of the second variant of the fifth embodiment of the heat transfer device;

5g the central cross section through a second variant of a diode laser component with a second variant of the heat conducting body of the fifth embodiment of the heat transfer device according to the invention;

5h the top view of a third variant of a heat conducting body of the fifth embodiment of the heat transfer device, in which the heat source facing surface away from the heat source, a series of elongated recesses are introduced;

5i the top view of a formed by applying the insulating plate on the third variant of the heat conducting composite of the fifth embodiment of the heat transfer device;

5y the central cross section through a third variant of a diode laser component with the third variant of the heat conducting body of the fifth embodiment of the heat transfer device according to the invention;

5k the central cross section through a fourth variant of a diode laser component with a fourth variant of the heat conducting body of the fifth embodiment of the heat transfer device according to the invention;

5l the central cross section of a fifth embodiment of the heat transfer device with the fourth variant of a diode laser component, in which the coolant supply and removal takes place in the heat conducting body via a connection body;

6a the top view of the heat conducting body of a sixth embodiment of the heat transfer device, in which a number of columns are introduced into a base body;

6b the central cross section of the sixth embodiment of the heat transfer device according to the invention in the form of a diode laser component, in which the coolant is supplied into the heat conducting body via a heat receiving body;

7a the top view of the heat conducting body of a seventh embodiment of the heat transfer device in which three fields of holes are introduced into a base body;

7b the central cross section of the heat transfer device of the seventh embodiment;

7c the central cross section of a first preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser;

7d the central cross section of a second preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser; and

7e the central cross section of a third preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser.

7f the central cross section of a fourth preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser stack.

8a the top view of a first variant of a heat conducting body of an eighth Ausführungsbei game of the heat transfer device, in which channels are introduced eccentrically into the heat conducting body;

8b the side view of a diode laser components with the first variant of a heat conducting body of the eighth embodiment of the heat transfer device;

8c the top view of a second variant of a heat-conducting body of the eighth embodiment of the heat transfer device, wherein the channels are introduced eccentrically into the heat-conducting body

8d the side view of a diode laser components with the second variant of a heat conducting body of the eighth embodiment of the heat transfer device;

8e the central cross section of the eighth embodiment of the heat transfer device in the form of a diode laser stack of diode laser elements with the first variant of the heat conducting body.

The Elements shown in the figures are not to scale and also the conditions the elements to each other are for illustration only.

The Reference numerals used in the figures are made up of three numbers (XYY) together, wherein the first digit (X) the embodiment and the second and third digits (YY) are the number of the element itself features. Elements with the same number (YY) are in different embodiments same or similar Nature and are designed for improved readability and comprehensibility to achieve the following description, only at its first Use described in detail.

elements or functional units of the illustrated embodiments are interchangeable and corresponding combinations are explicitly included here.

introductory the description of the embodiments be explicit emphasized that the Heat-conducting body according to the invention in terms of Location of the connection area to the recording or contact surface not on a specific Restricted arrangement is. Furthermore, as elongated channels trained parts of the channel structure neither to a specific orientation the channel longitudinal axis in terms of the recording or contact surface still on a specific Extension of their extension, especially in the longitudinal direction still on a certain location outside of Heat source projection volume limited in the heat conducting body. Finally are also inlet and outlet openings for coolant supply the channel structure with respect to their position to each other and with respect to the Recording or contact surface not on a specific Configuration set.

To illustrate this universality inherent in the invention, a heat conduction body serving as a cuboid having six outer surfaces - a pair of two opposing upper and lower major surfaces, a pair of two opposing front and rear surfaces, and a pair of two opposing left and right side surfaces - Is formed, wherein in each case a first surface pair is oriented perpendicular to the other two surface pairs:
The attachment surface can be arranged on the same surface of the cuboid as the receiving surface, on an opposite surface or an angled to her oriented surface. It can be on one or more surfaces.

The channel axes can be aligned parallel to a normal of each of the three pairs of faces, individually or in sections, also parallel to two or more normals the three pairs of surfaces. The channel longitudinal axes can also parallel to one or more, to all three Fächpaarnormalen inclined, direction or directions as well as partly or wholly irregularly.

Lies the at at least approximately parallel arrangement of the contact surface to the receiving surface the receiving surface not flush with at least one edge of two surfaces, In principle, every area of the heat conduction body is outside the heat source projection suitable to contain at least a part of the channel structure. Be without the restriction the general public the reception area on the upper main surface extends apart from an edge with an adjacent surface so extends the heat source projection from the upper to the lower major surface through the heat conducting body, and the channel structure can at least partially between the heat source projection and at least one of the surfaces front surface, back surface, left side surface and right side surface lie. About that In addition, the channel structure can also be away from the heat-conducting body areas, which in Kreuzartiger Expansion of the extent of the heat source projection volume in the direction of said surfaces Front surface, Back surface, left side surface and right side surface are arranged in the heat conducting body be.

Inlet and outlet openings can be arranged on one and the same outer surface of the cuboid or on different, opposite or angled to each other oriented surfaces. They can be arranged on the same surface both as the receiving surface and as the connection surface, and on one of the receiving surface or the connection surface opposite or on one or two angled to the receiving surface or the connection surface area or surfaces. In particular, one or both openings may be arranged in the connection surface.

A section of the variety of possible configurations reflects the in 1a to 1k ' shown sketchy plan views (uncoated), side views (simply painted) and front views (twice painted) of different variants of embodiments of the heat conducting body in a heat transfer device according to the invention with an edge emitting laser diode bar as a heat source. It illustrates a variety of arrangements that can take the contact surfaces, receiving surfaces and bonding surfaces with each other and with respect to the channel structure, and the various configurations and arrangements of channel structures in Wärmeleitkörpern.

For the sake of clarity, examples are given only in the 1a and 1a ' Used with reference numerals 110 the checkered shaded illustrated laser diode element denote with 113 the directional arrow of the light emission, with 120 the heat-conducting body, with 122 the spotted heat source projection in the heat conduction body, with 123 possible, represented by a thick bar, connecting surfaces for cohesive attachment of a heat dissipation body, with 130 the dashed outlines of one or more channels of the channel structure according to the invention. Furthermore, a description of possible inflows and outflows as well as inlets and outlets is dispensed with in order to focus on the essential aspects of the following variants.

While in 1a and 1a ' only a single channel, which is oriented parallel to the contact surface and perpendicular to the light emission direction, is arranged in the heat conduction body, are in the following figures 1b to 1k ' always arranged a plurality of mutually parallel channels in the heat conducting body.

While in 1a and 1a ' only two connection surfaces for cohesive connection with the heat dissipation body are shown - namely a first connection surface, which is arranged on the opposite side of the laser diode bar heat conduction, and a second connection surface, arranged on a light emission direction rear side of the heat conduction perpendicular to the contact surface or parallel to the light exit surface is, -, are in the followers 1b to 1k ' Also illustrates further attachment surfaces, which may be arranged for example on a front side lying in the light emission direction of the Wärmeleitkörpers, and on one of the connection surface facing top of the Wärmeleitkörpers, on a left side surface relative to the light emission direction of the Wärmeleitkörpers and on a relative to the light emission direction side surface of the Wärmeleitkörpers both side surfaces are aligned both perpendicular to the top and bottom of the heat conducting body as well as perpendicular to the front and back of the heat conducting body.

1b shows a heat conducting body in which a plurality of channels are arranged with their longitudinal axes parallel to each other and parallel to the light emission direction in the heat conducting body.

1c shows a heat conducting body in which a plurality of channels with their longitudinal axes parallel to each other, parallel to the laser bar width direction, that is: parallel to the contact surface and perpendicular to the light emission direction, are arranged in the heat conducting body. The 1b ' and 1c ' show that there are different ways in page view to execute these channels. So they can be introduced as at least partially closable cooling fins both in the top of the Wärmeleitkörpers and in the underside of the Wärmeleitkörpers, as a single or in several layers are completely introduced into the heat conducting, or extending continuously from the top to the bottom of the heat conducting body.

Examples of the integration of an intermediate body in the cohesive connection of heat conducting body and laser diode bar show the 1d to 1e ' , As can be seen from both views, the contact surface of the laser diode bar and the connection surface of the heat conducting body are perpendicular to each other, which leads to the heat source projection being arranged completely outside the heat conducting body in the intermediate body.

According to the invention is in such an arrangement, the position of the channel structure in the heat-conducting arbitrarily, wherein special embodiments priority may be given as needed.

As in the top view of 1d is shown, a plurality of channels may be arranged with their longitudinal axes parallel to each other and parallel to the light emission direction in the heat conducting body. The side views in 1d ' show that different channel layers one above the other in the direction can be stacked perpendicular to the contact surface, wherein a heat conduction region can remain recessed in the heat conducting body of channels, which is defined by a projection of the receiving surface perpendicular to the rear attachment surface.

The top view of 1e shows two groups, each with a plurality of channels, which are arranged with their longitudinal axes parallel to each other and perpendicular to the contact surface in the heat conducting body. In this case, an extended against the light emission direction to the rear attachment surface heat source projection remains free of channels, so that there is an unimpeded heat conduction from the receiving surface to the connection surface.

The side views in 1e ' show that the channels may be embedded in the heat-conducting body, or may extend continuously from the top to the bottom.

The 1f to 1g ' show the arrangement of two channels, which are arranged one above the other in a laser diode element in the light emission direction upstream region or projection of the heat conducting body. The arrangement of 1f and 1f ' differed from the arrangement of the 1g and 1g ' in that, in the first case, the heat conducting body is formed with a step which rises above a shoulder behind the projection and comprises the receiving surfaces, while in the second case an intermediate body supporting the laser diode bars is spaced a sufficient distance from the front end face on the receiving surface of the Heat conducting body is attached.

The 1h to 1i '' show the arrangement of channels on both sides of the heat source projection, wherein the channels are arranged left and right with respect to the light emission direction in the heat conducting body. In 1h respectively 1h '' each two channels are arranged parallel to each other and parallel to the light emission direction in the heat conducting body. In 1i relationship-oriented 1i '' are each a group of channels with their longitudinal axes parallel to each other and are arranged perpendicular to the contact surface in the heat conducting body and extending continuously from the top to the bottom.

As the 1j to 1k ' show more complex channel structures may be arranged in the heat conducting body, for example, those of the features in the 1f to 1g ' illustrated channel structures with features of in 1h to 1i '' Connect shown channel structures.

So extend in the in 1j and 1j ' illustrated example, two superimposed U-shaped channels around the heat source projection around, wherein the central leg of the channels in the region of a projection of the heat conduction body is opposite to the laser diode bar. In the in 1k and 1k ' As shown, the channel structure extended almost completely around the heat source projection, wherein in the Zentralbreich of the projection, a reversal of the coolant flow is provided, which allows to connect the channels via two off-center inlet and outlet ports to a coolant circuit and on the other hand, the coolant flow fluidically form largely symmetrical to the heat source, so that the laser diode bar during operation undergoes no appreciable temperature difference between its left and right side, as is possible in contrast to the previous example.

1l shows the sketchy representation of the side view of a first embodiment of the heat transfer device with a heat-conducting body 120 and a semiconductor device 110 as a heat source, wherein the semiconductor device 110 - Here, an edge-emitting laser diode bar - at the edge of the front of the Wärmeleitkörpers 120 is arranged. The light emission direction of the laser diode bar is indicated by an arrow 113 clarified. In addition, by the reference numeral 112 the heat conducting body 120 remote contact surface of the semiconductor element 110 shown.

In the rear, that is with respect to the laser diode bar opposite to the light emission, the region of the Wärmeleitkörpers 120 is a first channel structure 130 trained, the first inflow 141 and a first course 151 having. The channel structure 130 is designed here as a microchannel structure. On one, the laser diode bar facing the top of the Wärmeleitkörpers 120 is an inlet opening 140 adapted to receive a coolant, whereby the coolant of the first channel structure 130 can be supplied. Equally, there is a drain hole 150 with the first procedure 151 coupled to the coolant from the first channel structure 130 derive. The underside of the Wärmeleitkörpers opposite the upper side 120 forms a connection surface 123 from, which allows for a conductive heat transfer, the heat to a heat dissipator attachable there (see.

4a /Federation 5l ) or to a heat receiving body of a heat dissipation body containing heat dissipating device (see. 7c ).

The heat source projection 122 of the semiconductor device 110 perpendicular to its contact surface is - as is illustrated by the dashed boundary line - in the front region of the Wärmeleitkörpers 120 below the semiconductor device ments 110 arranged. In the projection volume itself, no channel structures are formed, and the heat-conducting body 120 is designed in the area of heat source projection to reduce the thermal resistance without a cavity and from a single piece.

The described heat-conducting body 120 permitted by coolant passing through the first channel structure 130 flows, the heat of the semiconductor device 110 convectively derive. Alternatively, the heat-conducting body 120 with or without a mediating heat-absorbing body (see. 7c ) Conductive by a connected heat dissipation body coolable. Both heat dissipation variants can be used simultaneously or individually and thus allow a particularly flexible use of the heat-conducting body 120 in the heat transfer device.

In 1m the sketchy representation of the top view of the first embodiment is shown. The multiplicity of the first channel structures 130 is here designed so that the supply of the coolant in the first inlet 141 the first channel structure 130 through the common inlet opening 140 he follows. Here are the channels of the first channel structure 130 arranged in parallel and through a common inlet 141 coupled together. You can not see the common drainage opening 150 , which allows a discharge of the coolant. Also in 1b is the emission direction of the laser bar by arrows 113 shown. The large number of arrows illustrates that a laser diode bar with multiple emitters is used.

A second embodiment is in 2a and 2 B shown, where it is in the heat-generating semiconductor device 210 is a single laser diode. 2a shows a sketchy representation of the front view. The semiconductor device 210 is centered on the heat conduction body 220 applied, wherein the single-laser diode is disposed at the edge of the front side and the emission direction is thus directed out of the image plane.

In addition to the first channel structure 230 is a second channel structure 231 formed, that of the first channel structure 230 fluidly connected in parallel. The second channel structure 231 points like the first channel structure 230 a second feed 242 or a second process 252 on, the coolant from the inlet opening 240 to the second channel structure 231 leads or from the second channel structure 231 to drain opening 250 passes.

The channel structures 230 and 231 are left and right of the projection 222 formed, which is characterized and limited by the dashed lines in 2a , Also in this heat-conducting body 220 No channels or other cavities extend in the area of the projection in order to minimize the thermal resistance and thus to take advantage of the advantages of the invention.

As in the plan view of the second embodiment in 2 B can be seen, are the channel structures 230 . 231 side of the long sides of the largest lateral extent of the semiconductor element 210 arranged. The individual channels of the respective channel structures 230 . 231 are arranged parallel to each other and stand on the long side of the largest lateral extent of the semiconductor element 210 perpendicular. The main extension of the individual channels takes place in the vertical direction, so that the coolant flows from top to bottom.

The first and second feeds 241 and 242 the first and second channel structures 230 and 231 are coupled together so that over the single inlet opening 240 Coolant is supplied. Also the only drain hole 250 is sufficient to cool liquid from the first and second processes 251 and 252 derive.

3a and b show two views of a heat transfer device according to a third embodiment for cooling three semiconductor devices 310 here light-emitting diodes, one of which emits a first in the blue spectral range, a second in the green spectral range and a third in the red spectral range. The light emission directions are indicated by the three arrows 313 displayed. For separate electrical control, the three LEDs are electrically separated from each other, metallic conductor tracks 324 on an electrically insulating body 325 applied, which together with the conductor tracks 324 and 326 the heat conducting body 320 forms and two channel structures 330 and 331 , here microchannel structures, has.

Non-designated bonding wires form an electrical connection of the heat-conducting body 320 remote electrical contact surfaces 312 the light-emitting diodes with the electrical conductor tracks 326 off while the heat conduction body 320 facing contact surfaces directly on the electrical conductor tracks 324 rest.

This arrangement is suitable, for example, as a light source for video projectors, which can be operated depending on the choice of heat dissipation method in two different classes of light intensity. In a group with a low light intensity is the at the connection surface 323 connected (not shown) heat removal device used as a heat sink, in which the heat is previously spread over a heat receiving body and passed directly or via a Peltier module in a fin cooler, the heat flowing past Umge exhausts air. At a high light intensity is the heat-conducting body 320 as a heat sink with convective heat release to a liquid cooling medium circulating through the microchannels.

In a fourth embodiment, of which a first variant in the 4a and 4b is shown, is the heat-generating semiconductor element 410 a laser diode bar. The 4a shows the central cross section through an exploded view of a diode laser component 415 and 4b shows the diode laser component 415 in the assembled state. The coolant supply and discharge into and out of the heat-conducting body 420 takes place in this embodiment via a connection body 480 on the side of the heat conduction body facing the laser diode element 420 is attached.

The heat-conducting body 420 is a microchannel heat sink made by joining five layers of copper. The laser diode bar is with indium solder at the edge to the front of the heat conduction body 420 attached. Further, an insulating plate 460 directly on the semiconductor device 410 facing side of the Wärmeleitkörpers 420 away from the semiconductor device 410 on the heat conducting body 420 attached. At the insulating plate 460 it is a polyimide film that provides a direct flow of current between the heat conduction body 420 and the connector body 480 in derogation. In addition, an electrically conductive contact element 470 for electrical contacting of the semiconductor device 410 on the heat conduction body 420 remote contact surface 412 of the semiconductor device 410 used. The electrical contact element 470 is a sheet of copper foil that is attached to the laser diode bar with electrically conductive adhesive.

The connection body 480 is on the contact element 470 arranged and is made of an electrically insulating body 482 educated. An electrical layer 483 on the electrically insulating base body 482 is a manufacturing component of the connection body 480 and forms an electrical contact with the electrically conductive contact element 470 out. A first connection element 481 is for electrical contacting of the electrical layer 483 of the connection body 480 electrically connected to the electrically conductive contact element 470 is standing, trained and allows the connection to a power source (not shown).

A first coolant connection element 448 is at the connection body 480 attached and serves to receive a coolant and to supply the coolant to the inlet opening 440 in the heat conducting body 420 , A lead 447 of the connection body 480 is designed for the supply line so that the coolant through a first contact element breakthrough 471 and a first insulation panel breakthrough 461 in the inlet opening 440 the Wärmeleitkörpers 420 is conductive and from there into the channel structure 430 is forwarded. An inlet seal 445 seals the inlet opening 440 opposite to the connection body 480 in the inlet opening 440 flowing coolant from.

To dispense the coolant, the connector body 480 a second coolant connection element 458 on. The coolant is removed from the channel structure 430 to drain opening 450 the Wärmeleitkörpers 420 passed and from there through a second Isolierplattdurchbruch 462 and a second contact element breakdown 472 to a return 457 of the connection body 480 transferred. An outlet sealing ring 455 is used on the return side for sealing.

The heat-conducting body 420 is using an electrically conductive adhesive on the bonding surface 423 is applied, cohesively to an electrically conductive heat-absorbing body 490 made of copper, which has a second electrical connection element 491 having. The connection element 491 is for contacting with at least one electrical connection of a power source (not shown), wherein the connection of the power source for connection of a power source connected to the first connection element 481 coupled, is opposite polarity.

The heat transfer device 415 is completed by a heat absorbing body 490 fixed heat dissipation body 498 , which has a - not shown - heat transfer structure for a channel structure in the heat conducting body alternative or additional convective heat transfer. In the preceding case, this heat transfer structure is a rib structure, which is flown through by a fan or a fan with ambient air. The heat transfer from the heat absorption body 490 to the heat dissipation body 498 is through a between heat absorbing body 490 and heat dissipation body 498 placed electrically insulating heat conducting foil 499 improved.

The heat transfer device allows in this fourth embodiment, particularly advantageous to power the laser bar. The first connection element 481 that is coupled to a first terminal of a power source is through the metallic layer 483 and the contact element 470 electrically with the heat conducting body 420 remote contact surface 412 of the semiconductor device 410 coupled. At the same time prevents the insulating plate 460 the electrical contact of the Wärmeleitkörpers 420 with the contact element 470 , The heat conducting body 420 facing contact surface 411 of the semiconductor device 410 is electrically conductive with the heat conducting body 420 coupled. Likewise, the heat-conducting body 420 and the heat receiving body 490 formed electrically conductive and both are via the second connection element 491 connected to a second, opposite to the first terminal terminal of a power source. The sealing rings 445 and 455 additionally prevent electricity from coming in contact with the coolant.

As indicated by the dashed line, no channel structure is formed in the projection of the base of the laser bar, which allows the laser diode element to be cooled both convectively and conductively. The projection comprises in particular the area of the heat conduction body 420 which between the receiving surface (see. 6a . 5c . 6a and 7a ) and the semiconductor device 410 lies. In addition, the heat absorption body has 490 In this area also no channels, so that in the case of a purely conductive cooling here also a very low thermal resistance is to be found.

The heat-conducting body 420 combines a number of functions in the heat transfer device. First, it allows the convective and conductive cooling of the semiconductor device, so has a thermal function. At the same time it serves as an electrical contact and allows the supply or removal of electricity. And third is the heat-conducting body 420 also for fixing the heat receiving body 490 usable.

A second variant of the fourth embodiment is in the 4c and 4d shown. The second variant differs from the first variant essentially in that the cooling liquid is not above the connector body 480 to the heat-conducting body and removed from the heat-conducting body, but over the heat-absorbing body 490 , Another difference from the first variant is that the electrically conductive contact element 470 consists of a plurality of bonding wires, with their first ends on the substrate-side contact surface 412 of the laser diode bar 410 and with its second ends on a metal layer 467 one as a laminated body 465 trained electrical insulation body are attached. The laminated body 465 consists of an insulation layer 466 made of alumina, which for mechanical symmetry reasons both at its the heat conduction body 420 facing side with a metal layer 468 made of copper as well as on its heat-conducting body 420 opposite side with a metal layer 467 made of copper.

The 5a 1 serve to illustrate four different variants of a fifth embodiment of the heat transfer device according to the invention, which is characterized in that a number of grooves 530 away from the semiconductor device 510 - here the laser diode bar 510 - In one, the Halbieiterbauelement facing and parallel to the contact surface surface of the Wärmeleitkörpers 520 are introduced. The four different variants represent four different embodiments of heat-conducting bodies characterized in this way 520 , Specifically, the 5a -D components of a first variant, the 5e -F components of a second variant, the 5h -J components of a third. Variant, 5k the component of a fourth variant and 5l the heat transfer device 515 in a fourth variant.

In all four variants are a set of grooves 530 in the said surface of the Wärmeleitkörpers 520 brought in ( 5a . 5e . 5h ). The introduction can be achieved by mechanical processing such as sawing or milling, chemically by isotropic or anisotropic etching or by laser cutting and by combinations of the mentioned methods.

In all four variants is by a in the range of Nutenreihe 530 on the surface of the heat conducting body 520 fixed insulating plate 560 ( 5b ) made of aluminum oxide with two openings 561 and 562 , the row of grooves 530 sections opposite, the row of grooves 530 at least in a section that is the area between the two breakthroughs 561 and 562 opposite, sealed to a closed channel structure. Here are the grooves 530 with respect to their longitudinal axes parallel to at least one connecting line between the two openings 561 and 562 aligned, so that a flow through the Nutenreihe 530 by introducing a cooling liquid into the first breakthrough 561 and outlet of the cooling fluid through the second opening 562 is possible ( 5c . 5f . 5i ). The mounting of the insulating plate 560 is preferably carried out after the laser diode bar assembly on the heat conducting body 520 using an adhesive. Alternatively, instead of the aluminum oxide ceramic as an insulating element, an aluminum nitride ceramic is used, which is provided on both sides with a copper layer and on the side facing away from the heat-conducting body has a projecting beyond the ceramic contact lug made of copper. In this case, analogous to the second variant of the fourth embodiment, the heat-conducting body 520 soldered facing copper layer prior to the laser bar assembly to the cooling structure and used as an electrical contact element, a series of bonding wires, the heat conduction 520 opposite copper layer electrically connected to the free laser diode bar contact surface the.

In all four variants of diode laser components 514 of the fifth embodiment is the electrical contact element 570 a copper sheet, which has been fixed with electrically conductive adhesive on the heat conducting body remote from the contact surface of the laser diode bar, a connection element 581 for fixing an electrical contact and has a breakthrough 571 that covers both with the first breakthrough 561 as well as the second breakthrough 562 the insulating plate 560 lies ( 5d . 5g . 5y . 5k ). This allows the coolant supply to the first breakthrough 561 and the coolant discharge from the second breakthrough through the one breakthrough 571 done in the contact element. Through the insulating plate 560 is the contact element 570 electrically from the row of slots 530 separated.

The differences between the four variants heat conducting bodies are based on the cross - sectional views of 5d . 5g . 5y and 5k clear:
In the first variant is the heat-conducting body 520 Made of one piece and electrically conductive, so that the ribs between the grooves 530 in electrical connection with the contact surface of the laser diode bar 510 is, which is firmly attached to the receiving surface ( 5d ). For electrical insulation of the channel structure relative to the coolant, it can be provided on the surface with an electrically insulating layer.

In the second variant of the heat-conducting body consists of an L-shaped body 525 and a laminated body 565 wherein the receiving surface on the end face of the shorter leg of the L-shaped main body 525 is arranged and the plate on the, parallel to the receiving surface, leg inner surface of the longer leg of the L-shaped main body 525 is attached ( 5g ). The main body consists of a carbon-metal composite whose thermal expansion coefficient approximately corresponds to that of the laser diode bar. The laminated body 565 consists of an insulation layer 566 made of highly thermally conductive aluminum nitride (AlN), which for mechanical symmetry reasons both at its base 525 facing side with a metal layer 568 from copper as well as at its base 525 opposite side with a metal layer 567 made of copper. In the base body facing away from the metal layer 567 are the grooves 530 brought in ( 5e ). The ratio of the layer thicknesses of the copper and aluminum nitride layers to one another is preferably selected such that the layered body in the layer plane (in-plane) has a thermal expansion coefficient which is approximately that of the main body 525 equivalent. So both components, laser diode bars 510 and laminated body 565 , by means of a highly reliable gold-tin solder cohesively to the body 525 be soldered.

In this arrangement, moreover, the ribs between the grooves 530 advantageously both with respect to the electrical potential at the receiving surface facing the contact surface of the laser diode bar 510 as well as with respect to the electrical potential at the receiving surface facing away from the contact surface of the laser diode bar 510 electrically isolated, so that the coolant wets only electrically neutral components.

The same double electrical insulation comes with the heat conducting body 520 the third variant ( 5y ): It consists of a laminated body in which a basic body 525 consists of a highly thermally conductive, electrically insulating or superficially electrically insulated material and has metal layers of copper on two opposite surfaces. In this case, the copper layers facing the laser diode element are in two electrically separate subregions of a first layer 524 and a second layer 526 subdivided to keep the cooling structure floating, in the form of grooves 530 in the second metal layer 526 is introduced. The first metal layer 524 represents the receiving surface 521 for fixing the laser diode bar 510 ready and is at the same time for the power supply or -abführung to or from the laser diode bar 510 suitable. For this purpose, it extends as a current-carrying layer 524 from the laser diode bar 510 facing side of the body on the the laser diode bar 510 opposite side of the body.

In the fourth variant of the Wärmeleitkörpers is the main body 525 in further layers - two electrically insulating layers and arranged between two electrically insulating layers intermediate body, which in turn may consist of several layers, subdivided ( 5k ). The part of the first metal layer facing the laser diode bar 524 stands with the laser diode bar facing away from the first metal layer 524 via a via in electrical connection extending through the body (not shown).

5l illustrates the integration of the fourth variant of the diode laser component 514 out 5k in a fifth embodiment of the heat transfer device according to the invention. Similarly, the first, second and third diode laser components shown in FIGS 5d . 5g and 5y , be integrated in the heat transfer device.

The coolant supply and discharge to or in the heat conducting body 520 via a connection body 580 standing on the laser diode bar 510 facing side of the Wärmeleitkörpers 520 is fastened, wherein the coolant wets only electrically neutral components. wells 546 and 556 serve to receive the inlet sealing ring 545 or outlet sealing ring 555 , The first insulation board breakthrough 561 is to transfer the coolant from the connector body 580 in the heat conducting body 520 provided while the second Isolierplattdurchbruch 562 for transferring the coolant from the heat conducting body 520 in the connection body 580 is provided.

The heat-conducting body 520 finally with indium solder on a heat absorption body 590 made of copper attached to the heat-conducting body 520 absorbed heat to a heat dissipation body, not shown transmits and the electric current from an electrical connection element 591 to the metallic current-carrying layer 524 transfers.

In a preferred embodiment of the channel structure of this fifth embodiment are two rows of intersecting grooves in the surface introduced the heat conducting body, so that in the groove pattern thus formed rhombohedral columns of the coolant under education of an elevated heat input bathes can be.

In the following two embodiments six and seven can the cooling channels X30 are not only directly into the heat-conducting body X20 be introduced, but also in a structurable easier Replacement body, with a part of the heat-conducting body X20 connected to this or in a continuous cylindrical recess in the heat-conducting body X20 is used.

The top view of the heat-conducting body 620 of the sixth embodiment of the heat transfer device is in 6a shown. In this embodiment, the channel structure 630 formed by a series of columns formed in a main body 625 are introduced and facing away from the heat source side of the body 625 on the opposite, the heat source side facing away from the body 625 extend. The heat-conducting body 620 has a basic body 625 made of electrically insulating CVD diamond with the first metal layer attached to the diamond 624 , a copper foil, on top of which the semiconductor device 610 , here the laser diode bar, with the in DE 196 44 941 C1 fixed method by means of a gold-tin solder and broken into sections.

6b illustrates the central cross section of the sixth embodiment of the heat transfer device, wherein the coolant supply into the heat conducting body 620 via a connection body 680 done on the the laser diode element 610 facing side of the heat-conducting body 620 is attached. The coolant discharge from the heat-conducting body 620 takes place via the heat absorption body 690 which is on the laser diode element 610 opposite side of the Wärmeleitkörpers 620 is attached.

The heat-absorbing body 690 is part of a heat dissipation device according to the invention, not shown in full, and is formed of a composite material of silicon, silicon carbide and diamond, as described in US Pat WO 2002 042 240 A2 is described. On this heat-absorbing body 690 is the heat conducting body 620 fastened with the help of a tin-containing solder. The insulating plate 660 is a ceramic substrate. The electrically conductive contact element 670 is a sheet of copper foil that is attached to the laser diode bar with electrically conductive adhesive.

Instead of directly into the diamond body can they channels also by anisotropic etching in a replacement body be introduced from silicon, which in a continuous zylinderische Recess in the diamond body is used.

In this embodiment, the cooling liquid over the already described first coolant connection element 648 of the connection body 680 fed. From there it is over the columns in the main body 625 and thus over the heat-conducting body 620 feasible, wherein the heat absorbed by the coolant and the second coolant connection element 658 the heat receiving body 690 is deliverable.

The 7a Figure 1 shows the heat transfer device of a seventh embodiment. 7a represents a plan view of the heat-conducting body 720 of the embodiment. The heat-conducting body 720 has the main body 725 with two sets of holes, extending in three fields from the heat source side of the body 725 on the opposite, the heat source facing away, side of the body 725 extend. The heat-conducting body 720 consists of a diamond-metal composite that is electrically insulated on the surface. There are three conductor tracks on the main body 725 applied to the main body 725 surrounded as a metal layer of copper in each case in a ring or U-shaped band and thus an electrical current from the side facing away from the laser diode bar bottom of the body 725 on the laser diode bar facing top of the body 725 and vice versa. A first circuit, the first metal layer 724 , stands with a first contact surface of the semiconductor device 710 electrically connected, wherein for attachment of the semiconductor device 710 the receiving surface 721 is provided, and extends U-shaped over a perpendicular to the top and bottom inclined front end face of the body 725 from the top to the bottom. A second conductor line is designed with a second electrical contact surface of the semiconductor component 710 to communicate electrically. The second conductor surrounds the body 725 as a metal layer 775 annular over side surfaces perpendicular to the face and top / bottom, and at least partially on the semiconductor device 710 facing side of the body 725 arranged and in particular to the power supply and -abführung to or from the semiconductor device 710 suitable. A third circuit, the second metal layer 726 , has no electrical function but serves only to maintain a large flat mounting surface on the top and bottom of the Wärmeleitkörpers. The third Leiterzug extends U-shaped over the one front of the body 725 opposite rear end surface from the top to the bottom. In addition, the breakthroughs are in the area of the third conductor 727 and 728 designed to introduce coolant into the first and second channel structure 730 and 731 in or out, through the holes in the body 725 is trained.

In 7b Fig. 12 is a central cross section of the heat transfer device of the seventh embodiment. The cut is made along the dashed line of 7a , In addition to the heat-conducting body 720 out 7a is the connection body 780 and the heat receiving body 790 at which the coolant connection elements 748 and 758 are attached, shown. The coolant supply and removal takes place via the heat absorption body 790 , on the side facing away from the laser diode element of the Wärmeleitkörpers 720 is attached. The coolant flow in this case leads from the first group of a field of holes, the first channel structure 730 , over a cavity 732 in the connecting body 780 to the second groups of holes, the second channel structure 731 which are arranged in two fields of holes on either side of the first field of holes. The cavity 732 is at the the semiconductor device 710 facing side of the Wärmeleitkörpers 720 designed and allows the fluidic connection between the two channel structures 730 and 731 and causes the second channel structure 731 the first channel structure 730 is connected in series. At the same time it is ensured in this arrangement that the coolant wets only electrically neutral components.

The semiconductor device 710 , here the laser diode bar, is by means of a gold-tin solder on the Wärmeleitkörper 720 attached. The electrical contact element 770 is a thin plate of tungsten-copper composite material also attached to the laser diode bar with gold-tin. An electrical connection element 774 from a metal foil of laser diode bar thickness is between the electrically conductive contact element 770 and the metal layer 775 arranged and connects them electrically conductive with each other.

The heat-absorbing body 790 in this embodiment consists of a composite of copper and Aluminiumnitridplatten, with only the outer, the Wärmeleitkörper 720 facing metal layers are shown. The first metallic layer 793 on the electrically insulated heat-absorbing body 790 is in electrical contact with the metal layer 724 the Wärmeleitkörpers 720 , The second metallic layer 794 is in the same way with the metal layer 775 in electrical contact. Finally, the metallic layer is 795 in electrical contact with the metal layer 726 ; however, this is just like the metal layer 726 without electrical function.

The metallic layer 795 also shows a breakthrough 796 on, as well as the second metal layer 726 a breakthrough 729 has on the side facing away from the semiconductor device, for the transfer of the coolant from the heat receiving body 790 in the heat conducting body 720 is provided. Furthermore, in 7b the first coolant connection element 748 shown, by means of which coolant over the inlet 747 in the first channel structure 730 can be supplied.

7c shows the central cross section of a first preferred embodiment of the seventh embodiment. The heat transfer device is in this case in the form of a diode laser component, wherein the heat receiving body 790 , on the side facing away from the laser diode element of the Wärmeleitkörpers 720 is attached, a Peltier module 797 having. The Peltier module 797 is on its cold side thermally to the heat source and on its warm side to a heat dissipation body according to the invention 798 connected as a heat sink. To use the heat-conducting body 720 as a heat sink is a terminal body 780 in the form of a combined coolant supply and discharge element with coolant connection elements 748 and 758 and advances and returns 747 and 757 on the laser diode element facing side of the Wärmeleitkörpers 720 connected and to supply the Wärmeleitkörpers 720 used with a liquid coolant.

In a second and third preferred Development of the seventh embodiment, shown in FIG 7d and 7e , is the heat dissipation body 798 directly at the connection area 723 on the side facing away from the laser diode element of the Wärmeleitkörpers 720 soldered with a tin solder.

The channel structure 735 in the heat dissipation body 798 is placed in a stack of copper layers sandwiched between two aluminum nitride plates.

The coolant supply and discharge from and to the channel structure 735 takes place via a first coolant connection element 738 that at the heat dissipation body 798 is attached. There is also an inlet 736 for coolant in the heat dissipation body 798 formed, which is the supply of coolant to the channel structure 735 allowed. For discharging the coolant from the channel structure 735 to a second coolant connection element, not shown, is a sequence 737 in the heat dissipation body 798 educated.

In the operation of the heat transfer device in the second development - as in 7d is shown - is based on a use of the Wärmeleitkörpers 720 as a heat sink waived, as is the cooling by means of the first channel structure 730 waived.

7e shows a central cross section through a third preferred embodiment of the seventh embodiment. The heat dissipation body 798 , on the side facing away from the laser diode element of the Wärmeleitkörpers 720 attached, already in the 7d shown micro-channel structure. Unlike the second preferred embodiment of the seventh embodiment, the heat-conducting body 720 as a heat sink incorporated by the local channel structures 730 and 731 via flow flow paths, which flow-parallel to the channel structure 735 the heat receiving body 790 are switched, are supplied with coolant.

Similar to in 7b is through the use of a connector body 780 with a cavity 732 a serial connection of the second channel structure 731 after the first channel structure 730 reached.

In a fourth preferred embodiment of the seventh embodiment, the heat of the diode laser component 714 via a 90 ° to the contact surface of the laser diode element inclined rear connection surface 723 whose normal is oriented counter to the light emission direction, conductively connected to a via a solder joint on the heat conducting body 720 attached heat-absorbing body 790 transmitted by a Peltier module 797 is cooled, the hot side of the heat dissipation body according to the invention 798 is connected. Such a heat transfer device 715 is suitable as in 7f shown, for cooling a plurality of diode laser components 714 pointing in the direction perpendicular to the contact surface 711 the edge emitting laser diode element 710 , stacked on top of each other. The serial electrical connection between two each other in such a diode laser stack 715 adjacent first and second diode laser components 714 and 714 ' is through an electrical connection element 776 realized that in electrical contact with the contact element 770 the first diode laser components 714 and with the first current-carrying metal layer 724 ' the second diode laser component 714 stands and at least partially between the first and second diode laser component 714 and 714 ' is arranged.

These Heat transfer device is especially for cooling of laser diode elements operating in pulse or qcw mode.

The same method of connection to a rear end surface of the heat conducting body comes in the eighth embodiment, illustrated by a cross-sectional view in FIG 8e , to the validity. The diode laser stack shown there contains diode laser components of a first variant, shown in the side view in 8b , with a first variant of a Wärmeleitkörpers, shown in the plan view of 8a , are equipped. The said heat-conducting body 820 consists of a cuboid base body 825 with an upper side, a lower side opposite the upper side, a front end face and a rear end face opposite the end face, both of which extend from the upper side to the lower side. A metallic current-carrying layer 824 extends from the top over the front to the bottom. In the upper-side section of the metallic current-carrying layer 824 is a reception area 821 for the integral attachment of a laser diode bar 810 intended.

In the top of the main body 825 are two microchannel structures 830 and 831 on both sides eccentrically introduced left and right of the dash-dotted symmetry line. They are each separately with inlet openings 840 and outlet openings 850 in contact with, in one of the receiving area 821 arranged away from the direction of the rear end surface, which also serve as a connection surface 823 serves.

The open in the body micro-channel structures 830 and 831 be through an insulating plate 860 covered. During the laser diode bar with its epitaxial contact surface on the metalli rule current-carrying layer 824 is attached to the metallic current-carrying layer 824 opposite pole electrical contact element 870 cohesively on the epitaxial-side contact surface 811 opposite substrate-side contact surface 812 attached, which with a laser diode bar 810 remote end portion is attached to the strain relief on the insulating plate.

Advantageous in the present arrangement of the microchannel structures 830 and 831 in the Wärmeleitkörper is that these far away from one for the unimpeded heat conduction to the connection surface 823 available center area in the main body 825 the Wärmeleitkörpers 820 lie.

The unimpeded heat conduction from the laser diode bar 810 to the rear connection surface 823 is how in 8c shown, in the second variant of the Wärmeleitkörpers 820 perfected: Here, the channel structures are located entirely outside the heat source projection of one against the light emission direction to the plane of the connection surface 823 extended heat source area. Specifically, within a projection that extends perpendicular to the end face through the heat conduction body, the heat conduction body has no width from the lateral extent of the heat source region parallel to the contact surface and perpendicular to the light emission direction and a height from the extension of the end surface in the direction perpendicular to the contact surface Recess on. As in 8d is shown in the side view of a second variant of the diode laser component, the channel structures in the relevant second variant of the heat conducting body via inlet and outlet channels 841 and 851 with the inlet openings 840 and 850 connected, wherein the inlet and outlet channels 841 and 851 as grooves in the receiving surface 821 placed opposite side of the body and through cover plates 839 are closed.

8e shows how diode laser components 814 the first variant forming a diode laser stack 815 with its back connection surface 823 via an adhesive joint to a heat-absorbing body 890 Tied by a Peltier module 797 is cooled, the hot side of the heat dissipation body according to the invention 798 is connected. The electrical series connection is effected by direct contacting of the substrate-side electrical contact element 870 a first diode laser components 814 with the current-carrying metal layer 824 ' one of the first diode laser component 814 adjacent second diode laser component 814 ' , For contacting also includes the formation of an electrically conductive cohesive connection, for example by means of an electrically conductive adhesive.

The heat-absorbing body 890 at the same time serves as a connection body for the coolant supply and removal to the individual heat conducting bodies of the diode laser stack. For this he has an inflow 847 on, with over with a first coolant connection element 848 can be supplied from a coolant source with coolant, and a drain 857 containing the coolant via a second coolant connection element 858 can deliver to a coolant sink. In the amount of each diode laser component 814 branches from the inlet 847 two inlet channels to the two inlets 840 every heat-conducting body 820 as well as from the process 857 two drainage channels to the two outlets 850 every heat-conducting body 820 ,

Similar to the diode laser stack 715 of the seventh embodiment, the diode laser stack is suitable 815 of the eighth embodiment advantageous for cooling laser diode elements 810 , which are operated in the pulse or qcw mode. So is the heat-conducting body 820 at a low duty cycle for conductive heat transfer to a cooled with ambient air heat dissipation body 898 and at high duty cycle for convective heat transfer to water through its channel structures 830 and 831 flows.

In a preferred embodiment of the heat removal body 898 in place of the heat receiving body 890 via an adhesive joint on the back connection surfaces 823 the heat conducting body 820 attached and has a channel structure for the convective transfer of heat to a liquid coolant, which optionally parallel or serially through the channel structures 830 and 831 the Wärmeleitkörpers 820 can flow.

Annotation: The following list of reference numerals is by prepending the figure number or the number of the embodiment applicable to the figures and the description text.

10

Semiconductor device

11

Facing heat conducting body contact area

12

Facing away from heat conducting body contact area

13

Emission direction arrow

14

diode laser component

15

Heat transfer device

20

thermal conductors

21

receiving surface

22

Heat source projection

23

bonding surface

24

first metal layer

25

body

26

second metal layer

27

breakthrough

28

breakthrough

29

breakthrough

30

first channel structure

31

second channel structure

32

cavity

35

Heat transfer structure / channel structure

36

Intake

37

procedure

38

Coolant connection element

39

cover plate

40

Inlet / inlet opening

41

first Intake

42

second Intake

45

Inlet seal

47

Forward / feed in the connecting body

46

deepening

48

first Coolant connection element

50

Outlet / outlet port

51

first procedure

52

second procedure

55

Auslassdichtring

56

deepening

57

Rewind / drain in the connecting body

58

second Coolant connection element

60

insulation

61

first Isolierplattendurchbruch

62

second Isolierplattendurchbruch

65

layer body

66

insulation layer

67

first metal layer

68

second metal layer

70

contact element

71

first Contact element breakdown

72

second Contact element breakdown

74

electrical connecting element

75

metal layer

76

electrical connecting element

80

connection body

81

first connecting element

82

body

83

metallic layer

90

Heat absorbing element

91

second connecting element

93

metallic layer

94

metallic layer

95

metallic layer

96

breakthrough

97

Peltier module

98

Heat dissipation body

99

Heat conducting

Claims (67)

Heat transfer device ( 15 ) with 1 at least one semiconductor device ( 10 ) and 2 at least one heat conducting body ( 20 ), wherein the semiconductor device ( 10 ) 1.1 at least one during operation of the semiconductor device ( 10 ) Heat generating pn junction and 1.2, all in the operation of the semiconductor device ( 10 ) Heat generating pn junctions in the semiconductor device enclosing, heat source region and 1.3 at least one contact surface ( 11 . 12 ) and the heat conducting body ( 20 ) 2.1 both at least one receiving surface ( 21 ), which in at least one cohesive connection with the contact surface ( 11 . 12 ) of the semiconductor device ( 10 ), as well as 2.2 at least one channel structure ( 30 . 31 2.2.1 for convective heat transfer to at least a first, through the channel structure (FIG. 30 . 31 ) conductive, coolant is provided, characterized in that the channel structure ( 30 . 31 ) of the heat conducting body ( 20 ) 2.2.2 completely outside a perpendicular to the contact surface ( 11 . 12 ) extending heat source projection ( 22 ) of the heat source region is arranged, and the heat conducting body ( 20 ) 2.3 at least one connection surface ( 23 ), via which at least one conductive heat transfer to 3 at least one heat dissipation body ( 98 ), 3.1 at least one heat transfer structure ( 35 ), wherein at least one convective heat transfer optionally takes place at least at 2.2.1 the first coolant or at 3.1.1 at least one second coolant which is conveyed through the heat transfer structure ( 35 ) flows. Heat transfer device ( 15 ) according to claim 1, characterized in that within the heat source projection ( 22 ) no channel structure ( 30 . 31 ) is formed in the heat conducting body. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that within the heat source projection ( 22 ) no cavity in the heat conducting body ( 20 ) whose largest dimension is the smallest dimension of a channel of the channel structure ( 30 . 31 ) exceeds. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that within the heat source projection ( 22 ) generally no cavity in the heat conducting body ( 20 ) is trained. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the semiconductor component ( 10 ) has two or more in the operation of the semiconductor device heat generating pn junctions. Heat transfer device ( 15 ) according to any one of the preceding claims, characterized in that the heat source region over the entire semiconductor device ( 10 ) is extended. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat transfer device ( 15 ) two or more semiconductor devices ( 10 ) each having at least one during operation of the semiconductor device ( 10 ) Have heat generating pn junction and the heat source region over at least two semiconductor devices ( 10 ). Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the conductive heat transfer from the connection surface ( 23 ) to the heat removal body ( 98 ) via at least one Peltier module ( 97 ) he follows. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the conductive heat transfer from the connection surface ( 23 ) to the heat removal body ( 98 ) via at least one heat receiving body ( 90 ), the at least one contact surface for the conductive heat transfer to the heat dissipation body ( 98 ) owns. Heat transfer device ( 15 ) according to claim 9, characterized in that the connection surface of the heat receiving body ( 90 ) is greater than the bonding surface of the heat conducting body ( 20 ). Heat transfer device ( 15 ) according to claim 9 or 10, characterized in that the heat absorption body ( 90 ) in at least one cohesive connection with the attachment surface ( 23 ) stands. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat dissipation body ( 98 ) in at least one cohesive connection with the attachment surface ( 23 ) stands. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat transfer structure ( 35 ) of the heat removal body ( 98 ) has at least one channel structure with a plurality of channels, of which at least one channel has at least one dimension perpendicular to the flow direction or to its channel longitudinal axis which is smaller than the smallest dimension of a channel of the channel structure ( 30 . 31 ) of the heat conducting body ( 20 ). Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the first coolant is liquid. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the flow of the first coolant is forced by at least one external means. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the first coolant through both the channel structure ( 30 . 31 ) as well as through the heat transfer structure ( 35 ) flows. Heat transfer device ( 15 ) according to claim 16, characterized in that the flow of the first coolant through the channel structure ( 30 . 31 ) and the heat transfer structure ( 35 ) takes place in parallel. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the convective heat transfer takes place both to the first coolant and to the second coolant. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the second coolant is gaseous. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the flow of the second coolant is forced by at least one external means. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat transfer structure ( 35 ) is present at least in sections in the form of at least one rib and / or column structure. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the cohesive connection of the receiving surface ( 21 ) with the contact surface ( 11 . 12 ) has at least one joint connection with at least one electrically conductive joining agent. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the cohesive connection of the receiving surface ( 21 ) with the contact surface ( 11 . 12 ) has at least one transition body. Heat transfer device ( 15 ) according to claim 23, characterized in that the up acreage ( 21 ) and the contact area ( 11 . 12 ) are substantially parallel to each other and the transition body between the receiving surface ( 21 ) and the contact surface ( 11 . 12 ) is arranged. Heat transfer device ( 15 ) according to one of claims 1 to 22, characterized in that the semiconductor component ( 10 ) with its contact surface ( 11 . 12 ) is attached to the receiving surface via a solder joint with. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat-conducting body ( 20 ) is formed at least in sections in the region of the heat source projection of a composite material of carbonaceous tissue and / or carbonaceous particles in a metal and / or silicon and / or silicon carbide-containing matrix. Heat transfer device ( 15 ) according to claim 26, characterized in that the heat-conducting body ( 20 ) a carbonaceous body ( 25 ) having. Heat transfer device ( 15 ) according to claim 27, characterized in that the carbon-containing basic body ( 25 ) consists of at least sections of diamond. Heat transfer device ( 15 ) according to claim 28, characterized in that the carbon-containing basic body ( 25 ) consists at least approximately completely of diamond. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the channel structure ( 30 . 31 ) has at least one of its inner surfaces at least partially an electrical insulation layer and / or a corrosion protection layer. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the channel structure ( 30 . 31 ) on a side remote from the semiconductor device side of the plane of the receiving surface ( 21 ) in the heat conducting body ( 20 ) is arranged. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the channel structure ( 30 . 31 ) has two or more channels in the heat conducting body ( 20 ) are arranged. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat-conducting body ( 20 ) at least one inlet opening ( 40 ) and at least one drain opening ( 50 ) having the channel structure ( 30 . 31 ) keep in touch. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the channel structure ( 30 . 31 ) has two or more channels, which are arranged in the heat conducting body and via a common inlet ( 41 . 42 ) and / or a common process ( 51 . 52 ) with at least one inlet opening ( 40 ) and / or at least one drain opening ( 50 ) keep in touch. Heat transfer device ( 15 ) according to claim 33 or 34, characterized in that the coolant, through a first channel structure ( 30 ) and by a second channel structure ( 31 ) in the heat conducting body ( 20 ) flows. Heat transfer device ( 15 ) according to one of claims 33 to 35, characterized in that the inlet opening ( 40 ) and the drain opening ( 50 ) on opposite sides of the heat conducting body ( 20 ) are arranged. Heat transfer device ( 15 ) according to one of claims 33 to 35, characterized in that the inlet opening ( 40 ) and the drain opening ( 50 ) on one and the same side of the heat conducting body ( 20 ) are arranged. Heat transfer device ( 15 ) according to one of claims 33 to 37, characterized in that at least one of the two openings ( 40 . 50 ) in the connection surface ( 23 ) is arranged. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the connection surface ( 23 ) of the receiving surface ( 21 ) at least partially opposite. Heat transfer device ( 15 ) according to claim 39, characterized in that the connection surface ( 23 ) at least in sections within the heat source projection ( 22 ) lies. Heat transfer device ( 15 ) according to claim 40, characterized in that the heat transfer structure ( 35 ) of the heat removal body ( 98 ) at least in sections in the heat source projection ( 22 ) is arranged. Heat transfer device ( 15 ) according to one of claims 1 to 38, characterized in that the connection surface ( 23 ) opposite the contact surface ( 11 . 12 ) is inclined by at least approximately 90 °. that the heat conducting body ( 20 ) a Stirnflä having the contact area ( 11 . 12 ) is inclined at least approximately by 90 ° and the connection surface ( 23 ) is arranged on a, the end face at least partially opposite, rear end surface. Heat transfer device ( 15 ) according to claim 43, characterized in that the end face to the receiving surface ( 21 ). Heat transfer device ( 15 ) according to claim 43 or 44, characterized in that the heat-conducting body ( 20 ) in a direction away from the end face at least in sections via the heat source projection ( 22 ) extends. Heat transfer device ( 15 ) according to one of claims 43 to 45, characterized in that the channel structure ( 30 . 31 ) is arranged at least in sections in a region of the heat conduction body, which between the heat source projection ( 22 ) and the rear end surface is located. Heat transfer device ( 15 ) according to one of claims 43 to 46, characterized in that the channel structure ( 30 . 31 ) at least in sections in a region of the heat conducting body ( 20 ) arranged in a direction away from the end face at least in sections via the heat source projection ( 22 ) extends. Heat transfer device ( 15 ) according to one of claims 43 to 45, characterized in that the heat-conducting body ( 20 ) within a volume that extends perpendicular to the end face through the heat conducting body ( 20 ) extends, a width of the lateral extent of the heat source region parallel to the contact surface ( 11 . 12 ) and perpendicular to the end face and a height from the extent of the end face in to the contact surface ( 11 . 12 ) has vertical direction, has no recess. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the semiconductor component ( 10 ) an edge emitting electro-optical device having a first contact surface ( 11 ) and at least one, the first contact surface ( 11 ) at least partially opposite, second contact surface ( 12 ) and with at least one light exit surface, which is arranged between the two contact surface planes, with respect to the contact surfaces ( 11 . 12 ) is inclined by an angle of at least approximately 90 ° and a light emission direction ( 13 ) defined perpendicular to the light exit surface in from the component ( 10 ) facing away from the direction. Heat transfer device ( 15 ) according to claim 49, characterized in that the heat-conducting body ( 20 ) in light emission direction ( 13 ) and against the light emission direction ( 13 ) at least in sections via the heat source projection ( 22 ) and the connection surface ( 23 ) at one of the electro-optical component ( 10 ) side facing away from the Wärmeleitkörpers ( 20 ) is arranged. Heat transfer device ( 15 ) according to claim 50, characterized in that the channel structure ( 30 . 31 ) at least in sections the area of the heat conducting body ( 20 ) arranged in the light emission direction ( 13 ) at least in sections via the heat source projection ( 22 ) extends. Heat transfer device ( 15 ) according to claim 50 or 51, characterized in that the channel structure ( 30 . 31 ) at least in sections the area of the heat conducting body ( 20 ) arranged in the light emission direction ( 13 ) at least in sections via the heat source projection ( 22 ) extends. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the channel structure ( 30 . 31 ) consists of a plurality of at least partially elongated channels whose longitudinal axes perpendicular to the contact surface ( 11 . 12 ) are arranged. Heat transfer device ( 15 ) according to claim 53, characterized in that the channels ( 30 . 31 ) extending from an upper surface of the heat conducting body parallel to the contact surface ( 20 ) to an underside of the heat conducting body opposite the upper side ( 20 ). Heat transfer device ( 15 ) according to claim 53 or 54, characterized in that at least one of the heat conducting body ( 20 ) fastened connection body ( 80 ) the coolant which is replaced by a first group ( 30 ) of channels in the heat conducting body ( 20 ) flows, receives and to a second group of channels ( 31 ) in the heat conducting body ( 20 ), the direction of flow in channels of the first group ( 30 ) is opposite to that in channels of the second group ( 31 ). Heat transfer device ( 15 ) according to one of claims 1 to 52, characterized in that the channel structure ( 30 . 31 ) in the heat conducting body ( 20 ) in the form of at least one recess in a surface region of the heat conducting body ( 20 ) is introduced, which is substantially parallel to the contact surface ( 11 . 12 ), wherein the Ausneh through a cover element ( 60 . 80 ) is completed at least in sections, and a first portion of the recess with a first breakthrough ( 61 . 47 ) in the cover element and a second section of the recess with a second opening ( 62 . 57 ) in the cover element ( 60 . 80 ). Heat transfer device ( 15 ) according to claim 56, characterized in that the channel structure ( 30 . 31 ) is formed by at least one row of a plurality of, at least partially substantially parallel, grooves. Heat transfer device ( 15 ) according to claim 57, characterized in that the channel structure ( 30 . 31 ) is formed by two rows of intersecting grooves. Heat transfer device ( 15 ) according to any one of claims 56 to 56, characterized in that the surface area of the semiconductor device ( 10 ) is facing. Heat transfer device ( 15 ) according to claim 59, characterized in that the surface area at least approximately with the contact surface ( 11 . 12 ) lies in one plane. Heat transfer device ( 15 ) according to one of the preceding claims, characterized in that the heat-conducting body ( 20 ) of at least one L-shaped basic body ( 25 ) and at least one plate ( 65 ), the receiving surface ( 21 ) on the end face of the shorter leg of the L-shaped main body ( 25 ), the plate ( 65 ) at, to the receiving surface ( 21 ) parallel, leg inner surface of the longer leg of the L-shaped body ( 25 ) and the channel structure ( 30 . 31 ) in the form of at least one recess in the plate ( 65 ) is introduced. Heat transfer device ( 15 ) according to claim 61, characterized in that the plate ( 65 ) is a laminated body consisting of two or more stacked laminates ( 66 . 67 . 68 ) consists. Method, in particular test method, for setting up and operating a heat transfer device ( 15 ) according to one of the preceding claims, with the following steps: a) materially connecting the at least one semiconductor component ( 10 ) with the heat conducting body ( 20 ) b) flow through the channel structure ( 30 . 31 ) of the heat conducting body ( 20 ) with a liquid, first coolant and testwise operating the at least one semiconductor component ( 10 ), in particular for carrying out functional tests of the at least one semiconductor element ( 10 ), associated with the detection of at least one parameter c) connecting the heat removal body ( 98 ) to the heat conducting body ( 20 ) d) operation of the semiconductor component ( 10 ) optionally with flow through the channel structure ( 30 . 31 ) of the heat conducting body ( 20 ) with the liquid, first coolant or under flow of the heat transfer structure ( 35 ) of the heat removal body ( 98 ) with the liquid, first coolant or a second coolant. Method, in particular test method, for setting up and operating a heat transfer device ( 15 ) according to one of claims 1 to 62, with the following steps: a) materially connecting the at least one semiconductor component ( 01 ) with the heat conducting body ( 20 b) establishing a detachable connection between the heat conduction body ( 20 ) and a heat removal device, c) flowing the heat removal device with a first coolant and operating the at least one semiconductor device ( 10 ), in particular for carrying out functional tests of the at least one semiconductor component ( 10 ), associated with the detection of at least one parameter, d) releasing the connection between the heat-conducting body and the heat-dissipating device e) establishing a cohesive connection between the heat-conducting body ( 20 ) and the heat removal body ( 98 ) f) operating the semiconductor device 10 ) optionally with flow through the channel structure ( 30 . 31 ) of the heat conducting body ( 20 ) or under flow of the heat transfer structure ( 35 ) of the heat removal body ( 98 ) with the first or a second coolant. Method, in particular test method, for setting up and operating a heat transfer device ( 15 ) according to one of claims 1 to 62, with the following steps: a) materially connecting the at least one semiconductor component ( 10 ) with the heat conducting body ( 20 b) establishing a connection between the heat conducting body ( 20 ) and the heat removal body ( 98 ) c) flow through the channel structure of the heat conducting body ( 20 ) with a liquid, first coolant, flowing the heat transfer structure ( 35 ) of the heat removal body ( 98 ) with the liquid first coolant or a second coolant and test-wise operating the at least one semiconductor component ( 10 ), in particular for carrying out functional tests of the at least one semiconductor component ( 10 ), associated with the detection we at least one parameter d) operating the semiconductor device ( 10 ) either with flow through the channel structure ( 30 . 31 ) of the heat conducting body with the liquid, first coolant or under flow of the heat transfer structure ( 35 ) of the heat removal body ( 98 ) with the liquid, first coolant or a second coolant. Method for setting up and operating a heat transfer device ( 15 ) according to one of claims 1 to 62, characterized in that at least two of the methods according to claims 63 to 65 are applied. Method according to one of Claims 63 to 66, characterized in that the semiconductor component ( 10 ) is an electro-optical component and in at least one test operation of at least one of the following parameters of the electro-optical component is detected: a) electrical operating current, b) electrical operating voltage, c) emitted radiation power and d) spectrum of the emitted radiation.