WO2009103531A1

WO2009103531A1 - Heat-dissipation polyvalent heat transfer device for at least one semi-conductor element, and associated testing and operating method

Info

Publication number: WO2009103531A1
Application number: PCT/EP2009/001187
Authority: WO
Inventors: Dirk Lorenzen
Original assignee: Dirk Lorenzen
Priority date: 2008-02-24
Filing date: 2009-02-19
Publication date: 2009-08-27
Also published as: DE102008010784B3

Abstract

The invention relates to a heat transfer device (15) having at least one semi-conductor element (10) and a heat conducting body (20). The semi-conductor element has a heat source region, which encloses the pn junctions thereof generating heat during operation. The heat conducting body (20) comprises at least one receiving surface (21) for the bonded connection to a contact surface (11, 12) of the semi-conductor element (10), and at least one channel structure (30, 31). The heat transfer device (15) is characterized in that the channel structure (30, 31) is disposed completely outside a projection (22) of the heat source region, which extends perpendicular to the contact surface (11, 12). The heat transfer device is also characterized by at least one connection surface (23) of the heat conducting body (20), said surface being provided for a conductive heat transfer to a heat dissipation body (98) comprising at least one heat transfer structure (35). During the operation of the heat transfer device (15), at least one coolant selectively flows at least through the channel structure (30, 31) of the heat conducting body (20), or through the heat transfer structure (35) of the heat dissipation body (98).

Description

Heat removal technology polyvalent heat transfer device for at least one semiconductor device and associated test and operating method

description

The invention relates to a heat transfer device for at least one semiconductor component, in particular at least one laser diode element, according to the preamble of claim 1.

During operation, semiconductor components generate heat substantially in the region of their component-specific, heat-source-related, heat sources which are located in the region of their pn junctions which are active during operation, wherein the pn junction can also contain a thin, electrically insulating zone. A laser diode element, as an example of a heat-generating semiconductor device, having an electro-optically active, light-generating and guiding region disposed in the pn junction region generally has at least one epitaxial-side and at least one substrate-side contact surface arranged on opposite sides of the active region , Since the epitaxial-side contact surface of the light-generating and heat-generating active zone is generally much closer than the substrate-side contact surface, a laser diode element by default epitaxial side cooled via an epitaxial heat conduction body by it is attached with its epitaxial contact surface in cohesive connection with the receiving surface of a Wärmeleitkörpers. In this case, heat generated in the pn junction is emitted via the contact surface or the contact surfaces and via the receiving surface to the heat-conducting body.

Wärmeleitkörper and laser diode element form together with the necessary for operation elements for electrically contacting the laser diode element, a diode laser component, if the heat-conducting body has the prerequisite for a company-specific sufficient dissipation and / or dissipation of the heat of the laser diode element.

Within a heat transfer device provided for the operation of the diode laser component, the heat removal is in principle completed with at least one convective heat transfer through at least one heat transfer structure to a liquid or gaseous coolant.

In the prior art, the heat conduction body either the conductive cooling and, where it is designed as a continuous solid and the heat spreads to a relation to the receiving surface enlarged connection surface through which the heat is delivered to a heat sink; or he serves the convective cooling, wherein a flowed through by a liquid cooling medium channel structure, such as microchannels, below the laser diode element, that is in the region of a projection of the laser diode element in the direction perpendicular to the contact surface, are arranged in the heat conducting body and serve as a heat transfer structure. The location of microchannels in such, designed as a Mikrokanalwärmesenke Wärmeleitkörper is according to the prior art heat removal technically useful, because the area in which the heat transfer takes place in the circulating cooling medium, the heat source with respect to their heat input surface in the heat-conducting directly opposite and essentially no, causes thermal resistance-increasing deflection or constriction of the heat flow waist in the area of conductive heat transport.

In the purely conductive cooling case, however, the heat-conducting body in principle has no possibility of convective heat release to a coolant. The convective heat release to a coolant must be provided from the outside by a correspondingly formed heat removal device, which receives the heat from the heat conducting body and emits via a heat transfer structure to a coolant.

In contrast, in a convectively cooled heat-conducting body, the heat is released to a coolant in the heat-conducting body itself.

Thermal conductors according to the prior art can be used either conductively or convectively by cooling. Conductive cooling Wärmeleitkörpern missing the channel structure or missing the microchannels for convective cooling and convective cooling Wärmieitkörpern the microchannels that carry the heat transfer fluid in a heat flow path, the borrowed in purely conductive use of convective cooling heat sink compared to the conductively cooling Wärmeleitkörpern would cause increased thermal resistance. Often, however, in the manufacture of a heat transfer device, particularly a diode laser component, and before its eventual integration into a system of multiple diode laser components and / or into a module, it is not yet known which heat removal paths and / or technique will ultimately be chosen by the user, especially then if the choice is to be made with respect to two different refrigerants, for example air and water.

It is an object of the invention to provide a heat transfer device with a heat conducting body, wherein the heat conducting body for the cooling of a semiconductor device universal and cooling technology polyvalent, that is convective and / or conductively cooling, can be used. Furthermore, during the production of the heat transfer device to implement a method for performing functional tests, which during a test operating phase of the semiconductor device uses a different from the application operation heat transfer method, which differs only slightly or only slightly different in terms of its thermal resistance of the heat transfer method used in the application.

The object is achieved with the features of claims 1 and 16 to 18.

Advantageous embodiments are the subject of dependent claims.

According to claim 1, a heat transfer device has at least one semiconductor component and a heat conduction body. In this case, the semiconductor component is an electrical, electro-optical, opto-electrical or opto-optical component which has at least one pn junction which generates heat during operation of the component, the function of the heat transfer apparatus being independent of the type of heat generation mechanism. The heat transfer device for laser diode elements or high-performance light-emitting diodes has proved to be particularly advantageous. In the following, reference is made to laser diode elements as a representative of high-performance light-emitting diodes.

The heat-conducting body of the heat-transfer device has at least one receiving surface for material-bonding connection with at least one contact surface of at least one semiconductor component. Depending on the semiconductor device and the intended application range, various embodiments of the receiving surface are conceivable. In the following, for reasons of simplification, only the reception area will be discussed. But this should also mean the option of multiple recording areas. For cooling a plurality of semiconductor elements, for example individual light-emitting diodes, which emit light in different frequency ranges of the visible color spectrum, or laser diode elements which emit light in different frequency ranges of the red light, the near infrared and / or ultraviolet, it may also be advantageous to provide multiple receiving surfaces on a single heat conducting body. Also, the shape, texture and the material of the receiving surface may vary depending on the mounting surface of the semiconductor device.

The semiconductor component is integrally connected to the receiving surface of the heat conduction body by means of one of a plurality of different possible connection methods with the receiving surface of the heat conduction body. - A -

The cohesive connection is the prerequisite according to the invention for an optimum heat transfer between the semiconductor component and the heat-conducting body, because non-cohesive connections always suffer from a heat transfer impeded by voids. Soldering, which requires a corresponding pre-treatment of the receiving surface of the heat-conducting body and / or the mounting surface of the semiconductor component, is one of the preferred cohesive bonding methods. Such pretreatments include surface buffing, cleaning methods, and methods of coating with adhesion promoting, diffusion-limiting, protective, and / or wetting-promoting materials, particularly metallic ones. The solder itself is applied to one of the connection partners before the connection process or is introduced separately between the connection partners.

Heat transfer devices have proven particularly advantageous whose laser diode elements are fastened to the epitaxial contact surface in the region of the receiving surface of the heat conduction body. Of course, a laser or light-emitting diode element can also be arranged on the substrate surface on the receiving surface of the heat-conducting body.

The heat-conducting body also has at least one channel structure as a heat transfer structure. The term "channel structure" encompasses all types of cavities in the heat conduction body, into which a liquid coolant can be introduced and from which a liquid coolant can be discharged, including first a simple channel in the form of a continuous bore in the heat conduction body and, moreover, specifically and in particular also all types of cavity structures which have an enlarged surface for efficient convective heat transfer in a selective region of the heat conduction body into which a liquid coolant can be introduced and from which a liquid coolant can be discharged deliberately positioned (micro) channels, for example produced by layering plates with recesses or holes, porous structures with random cavity distribution, for example in sintered bodies, pore channels, and cooling rib rows or cooling column fields on an inner surface of the Wärmeleitkörpers. The channels may be formed by recesses or etching, for example. For feeding the channel or the channel structure with a liquid coolant, the heat-conducting body preferably has at least one inlet opening, which communicates with the channel or the channel structure. For discharging the liquid coolant from the channel or the channel structure, the heat-conducting body preferably has at least one drain opening, which communicates with the channel or the channel structure. Liquid passing through the channel structure of the meleitköφers flows, receives the heat generated during operation of the semiconductor device and then performs this.

The heat transfer device is characterized in that the heat-conducting body can be used both in a cooling manner and in a conductive cooling manner. This is inventively achieved in that at least one channel or a channel structure completely outside of a perpendicular to the contact surface extending heat source projection of the component-specific functional principle caused integral heat source region of the thermally conductive body in materially connected semiconductor component arranged and thus not in the region of the main heat flow in pure conductively cooled case lies. Said heat source region comprises all pn junctions used in the operation of the semiconductor component and thus the main heat sources of the semiconductor component. The expansion of the heat source region may be minimally limited to the smallest possible confinement volume for all heat-generating pn junctions in the semiconductor device or may extend completely over the entire volume of the semiconductor device. In the case of the existence of a plurality of semiconductor components, the heat source region according to the invention can extend over the pn junctions of two or more semiconductor components or completely over a volume comprising all the semiconductor components.

With the inventive arrangement of the channel or the channel structure completely outside the above-mentioned heat source projection according to the invention can be achieved in the conductively cooled case, a thermal resistance which differs only slightly from that of a heat transfer device whose Wärmeableitanordnung no cavities - especially no coolant-carrying (micro- or pores -) channels - has. Since the per se somewhat less thermally conductive because cavitated area for forced convective heat transfer preferably in the vicinity of the recessed for forced convective heat transfer in fluid cavities in the heat conduction area can be introduced into the heat-conducting body, is also in the case of convective cooling of the Wärmeleitkörpers expect only a little higher thermal resistance than in microchannel heat sinks according to the prior art.

By completely dispensing with channels or channel structures in the heat source projection of the semiconductor element in the heat conducting body, the thermal resistance for heat flow through the heat conducting body is minimized at least locally. However, this is not a waiver of channels or Channel structures in the remaining heat-conducting body to be confused. Only the area which is particularly important for conductive cooling - the area within the heat source projection - is free of channels or channel structures for guiding the coolant.

In addition to the channel structures used for cooling, it is also desirable that no other cavities and / or impurities are present in the projection area; and except for a material-based possible residual porosity, the heat-conducting body preferably has no cavities which are within the projection.

With regard to the connection between receiving and contact surface is to emphasize that the cohesive connection of the receiving surface of the Wärmeleitkörpers with the contact surface of the semiconductor device may consist of a single joint zone, wherein the receiving surface of the Wärmeleitkörpers is substantially parallel to the contact surface of the semiconductor device. On the other hand, the cohesive connection of the receiving surface of the heat conduction body with the contact surface of the semiconductor component may have an intermediate body, which is materially connected to the receiving surface of the heat conduction body via a first joining zone as well as being materially bonded to the contact surface of the semiconductor component via a second joining zone. In this case, the first and the second joining zone may be substantially parallel to each other and arranged on opposite sides of the intermediate body. The first and second joining zones may also be arranged substantially perpendicular to one another. Thus, the contact surface of the semiconductor device and the receiving surface of the heat conducting body are arranged substantially perpendicular to each other, wherein the heat conducting body can be completely outside the heat source projection of the semiconductor device. It is only a question of the order of the individual joining steps, whether the intermediate body may be part of the Wärmeleitkörpers: If the intermediate body in a first Joining step materially connected to the semiconductor device, and this composite of semiconductor device and intermediate body in a second Joining step cohesively with the Thermal body connected, so the intermediate body can be considered as a separate body. If, on the other hand, the intermediate body is connected to the heat-conducting body in the first joining step, then the intermediate body can be regarded as part of the heat-conducting body, in which case the receiving surface is arranged on the intermediate body for material connection to the contact surface of the semiconductor component. With regard to the geometric arrangement of the bodies to each other, the result is independent of the order of the joining steps. In all cases, the channel structure of the heat conducting body is arranged outside the heat source projection of the semiconductor component. The invention suffers from a substantial, production-related advantage in that a possible covering of the channel structure apart from the projection of the semiconductor component does not have to be electrically or thermally conductive, because the cover does not necessarily have to conduct heat from the semiconductor component into the channel structure. Unlike in the prior art, in which channels for unimpeded heat absorption in the projection of the semiconductor device and thus necessarily a cover between the channel structure and semiconductor device to protect the semiconductor device must be present before contact with the coolant, the invention also comes without a cover of the Channel structure, if coolant supply and discharge are connected directly to the channel structure and attached to the heat conduction body.

The heat transfer device according to the invention is additionally characterized in that the heat conduction body has at least one attachment surface for a conductive heat transfer to at least one heat removal body. In turn, the heat removal body may be considered to be part of a heat removal device in thermal communication with the heat conducting body, the heat removal body delivering the heat it receives from the heat conducting body via a heat transfer structure to a coolant flowing through the heat transfer structure. Thus, the heat dissipation body according to the invention is an alternative or additional heat dissipation to the heat conducting body. In this case, the heat transfer from the heat-conducting body to the heat-dissipating body can take place both directly (directly) and indirectly (indirectly) via one or more intermediate bodies without a further intermediate body. For example, a heat absorbing body which is in direct contact with the heat conducting body, spread the heat and spread to the heat transfer body transmitted.

Preferably, the thermal connection between the connection surface of the heat conducting body and the heat transfer structure of the heat dissipation body is consistently cohesively. Depending on the number of intermediate bodies, in this case there is a joining zone (no intermediate body) or a plurality of joining zones (one or more intermediate bodies) between the heat-conducting body and the heat-dissipating body. A cohesive connection is the best prerequisite for optimum heat transfer between heat-conducting body and heat-dissipating body, because non-cohesive connections always suffer from a heat transfer impeded by voids.

Now can be regarded as part of the Wärmeleitkörpers by a material connection of heat dissipation body and heat conducting body of the heat removal body. Essential to the invention is in this Connection the fact that both bodies are present separately before the connection process and both bodies can independently ensure the heat conduction to a specially assigned each heat transfer structure for a convective heat transfer to a coolant.

In the case of using a heat-spreading heat-absorbing body as an intermediate body, the attachment of the heat-dissipating body to the heat-absorbing body need not necessarily be cohesive with sufficient heat spreading. This is particularly true when a heat input surface of the heat receiving body, which is in material connection with the connection surface of the heat conducting body, is smaller than a heat discharge surface of the heat receiving body, which is in contact with the heat dissipation body.

According to the invention, the heat removal body of the heat transfer device is a heat sink alternative or optional heat sink with convective heat dissipation. The term heat sink in the sense of the invention encompasses all types of devices which have at least one heat transfer structure specially designed for heat transfer to a flowing liquid or gaseous coolant, wherein a coolant circuit forming the coolant flow can be open or closed. These heat sinks include, for example, open air-flowed fin coolers and water-carrying microchannel heat sinks. Evaporative cooling devices, such as spray coolers or heat pipes, may be heat sinks with integrated closed coolant circuits that generally deliver the heat to a heat sink with heat transfer to an open coolant loop. Alternatively, combinations of the described heat sinks are possible.

Between the heat conducting body and the heat transfer structure of the heat removal body, a Peltier element or a plurality of Peltier elements electrically connected in series and / or parallel to a Peltier module can be arranged, which introduce an electrically generated temperature difference into the heat transfer device. Particularly preferably, a Peltier module is integrated in the heat removal body.

The heat dissipation from the heat transfer device according to the invention is done according to the invention by the heat transfer to at least one coolant.

The heat transfer device according to the invention allows a depending on the case selectable, sufficient heat dissipation for cooling the semiconductor device via the heat conducting body with delivery the heat to a first, preferably liquid, coolant, for example water, or via the heat dissipation body with the release of heat to a second coolant, for example air. The invention thus enables a universal use of the heat conduction body for conductive cooling, which is characterized by the heat transfer to the heat dissipation body, and on the other for convective cooling, which is characterized by the heat transfer to the flowing through the heat conducting body coolant, depending on Application area and / or user request. Another advantage of the combination of conductive and convective cooling of the heat conduction allows, for example, in the case of insufficient convective cooling of Wärmeleitkörpers additionally rely on a possible convective cooling in the heat sink and thus use both convective heat transfer paths simultaneously, whereby a better heat dissipation property is achieved. This allows both heat removal paths-those in the heat-conducting body and those in the heat-dissipating body-to be used for dissipating heat to both coolants. Particularly effective is the heat transfer device when both the first coolant and the second coolant is a liquid, preferably water.

In addition, the heat transfer device allows the use of a simple and inexpensive to manufacture its heat conducting body, which is suitable for sufficient convective cooling for semiconductor devices, wherein the connection of a more complex heat transfer structure having heat removal body on the heat conducting body can exceed the Wärmeabfuhreigenschaf- th the Wärmeleitkörpers.

For example, the heat removal body may include a channel structure located in the heat source projection. In addition, the channel structure of the heat removal body may have channels, in at least one dimension perpendicular to the flow direction or to the channel longitudinal axis are smaller than the smallest dimension of channels in the channel structure of the Wärmeleitkörpers. In addition, the channel structure of the heat removal body may have more channels than the channel structure of the Wärmeleitkörpers. Taken together, the two last properties thus ensure an increased heat input area into the coolant and thus at the same flow rate for a particularly low thermal resistance of the heat transfer device. In fact, the thermal resistance of the heat transfer device may be lower in the state of conducive cooling of the heat conduction body than in the state of convective cooling of the heat conduction body alone.

The heat source projection of the semiconductor component preferably comprises the entire region of the heat conduction body, which is formed on the opposite side of the contact surface. In particular it should be noted that the width of the semiconductor device does not have to match the width of the heat conduction, so that of course, a channel structure laterally - ie right and left or front and rear - may be formed in the heat conduction without lying in the projection.

In principle, the position of the connection surface is independent of the position of the contact surface and the receiving surface.

In an advantageous embodiment, the connection surface for the conductive heat transfer to the heat dissipation body is at least partially within the projection of the at least one mounted on the heat conducting semiconductor device, so that the heat without detour, ie as directly as possible, is transferable to the heat dissipation body. An increased thermal resistance by deflection or narrowing of the heat flow waist can thus be prevented.

If the connection surface, for example for structural and / or design reasons, is perpendicular to the contact surface, then this layer requires a deflection of the heat flow, which is preferably accompanied by a heat spread. Regardless of a heat spread, a heat flux with deflection always causes a higher thermal resistance than with heat flow without deflection. However, the decision for the heat conduction less favorable heat deflection is the advantages of the invention of the heat transfer device not in question. Even if after a deflection of the heat flow, the heat is partially guided through the channel structure in the heat conducting, but the deflection area in the heat-conducting body of cavities and allows a deflection without thermal conduction restrictions that go beyond the actual deflection.

Preferably, the region of the heat-conducting body is free of cavities, over which the essential part of the heat flow extends from the receiving surface to the attachment surface. Geometrically formulated, this means that for each connection surface oriented at an angle to the contact surface, the heat source projection in the heat conduction body extends beyond the semiconductor component in the direction of the connection surfaces up to the connection surface.

The described heat transfer device is designed for cooling of a multiplicity of different semiconductor components. As already indicated, the arrangement is particularly advantageously suitable for laser diode elements, such as laser diodes or single-laser bars. Further heat sources in addition to edge and surface emitting laser diodes or laser diode arrays are light-emitting diodes, semiconductor switching elements and optically pumped semiconductor lasers and sunlight-absorbing solar cells, wherein the semiconductor material can be both inorganic and organic. In principle, however, the heat transfer device can be used for cooling any type of components.

An arrangement of the receiving surface for the cohesive assembly of edge-emitting laser diode elements has also proven to be particularly advantageous, which has a common edge with an angled end face of the heat-conducting body, the light-emitting surface of the laser diode element being oriented parallel to the front end face and approximately with the face in one plane. An inclined to the receiving surface front end face allows the unrestricted propagation of the laser diode element emitted beam at least in sections of the beam, which are arranged in the beam path before or during the beam shaping by a first, the light emitting surface downstream optical element. In addition, in the light emission direction on the side facing away from the receiving surface side of the end face extending over the receiving surface out areas of the heat conducting body according to the invention contain a channel structure for convective heat transfer.

The at least one channel in the heat dissipation body is preferably arranged in a region below the receiving surface plane near the heat input region.

Preferably, a channel structure consists of a multiplicity of channels which, at least in sections, have an elongated extension in the direction of a channel longitudinal axis as the reference axis for the alignment of the channel section.

A possible embodiment of the channels of a channel structure is the perpendicular to the receiving surface arranging the channels. Here, the heat-conducting body on the upper side, ie on the receiving surface, an inlet opening and on the underside, ie in the region of the connection surface, a drain opening. A channel which couples the two openings extends only in one plane, the plane passing through both openings and perpendicular to the receiving surface and attachment surface.

The inlet and outlet openings can be reversed, whereby the flow direction of the coolant turns over. Alternatively, the inlet and outlet openings can be arranged not only on respectively opposite sides of the heat conducting body but also on only one side of the heat conducting body.

In forming multiple channels in a heat conducting body, arranging the channels in parallel allows a plurality of channels to be formed in a very small space. Under the parallel arrangement In this case, the channels are to be understood as the parallelism of the planes that run through the individual channels. The parallelism of the channels is not limited to the vertical extent, but may also refer to channels formed in different horizontal planes parallel to the receiving surface.

Each channel or each channel structure preferably has at least one inlet and at least one outlet, which can be used for the supply or discharge of a coolant. In order to facilitate the integration of the heat transfer device into a coolant guide system, it is advantageous to combine the inlet or outlet into a common inlet and / or a common outlet when there are several channels in a heat conducting body. Such a common inlet or outlet can in this case be formed by additional channels in the heat conducting body. In addition, a common inlet and outlet has proven to be particularly advantageous since all channels can be coupled to a coolant source or sink by a single inlet and outlet opening.

The heat-conducting body can be formed from a single or a plurality of different materials. In order to achieve a particularly good heat dissipation property, a low thermal resistance or a good thermal conductivity must be taken into account when choosing the material. The material must also allow the formation of the channel structures. Heat-conducting bodies made of copper, diamond or a carbon composite material have proved to be particularly advantageous. Copper, for example, also has the advantage of being electrically conductive and thus allows the semiconductor component mounted thereon to be supplied with electric current. Diamond has the highest thermal conductivity of all known solids in all three spatial directions. Carbon composite materials, for example, diamond-metal composites have the advantage that their thermal expansion coefficients can be adapted to those of the semiconductor device, which allows a mechanically low-voltage cohesive connection of the semiconductor device with the heat-conducting body.

At the heat-conducting body special requirements are made. The heat source projection in the heat conduction body is free of channel structures and cavities, while in the remaining region of the heat conduction body microchannels are designed for convective cooling.

Therefore, the formation of the heat-conducting body from an L-shaped basic body has proved to be particularly advantageous, the receiving area being arranged on the end face of the shorter leg and the inner surface of the longer leg parallel to the receiving area being used for the material-locking fastening. In the at least in a first layer recesses are introduced, which form, with adjacent second and third layers at least in sections, a closed channel structure through which the coolant can be guided.

The wetted with the liquid cooling medium surfaces of the Wärmeleit- and / or -abfuhrkörpers may be at least partially provided with at least one protective layer, which is less erosion and / or susceptible to corrosion than the base material of the Wärmeleitkörpers or the basic material constituents of the cooling channels forming material structure , The protective layers can be electrically conductive or electrically largely insulating. In the case of an electrically largely insulating protective layer which extends over the entire area of the surfaces of the heat-dissipating and / or discharge body which are wetted with the liquid cooling medium, the liquid cooling medium is opposite to an electrical potential which may possibly be at the heat-conducting and / or or -abfuhrkörper for electrical connection to the semiconductor device is applied, separated. Even electrically highly conductive cooling media such as custom or seawater can optionally be used here for cooling, without causing a potential-induced electrochemical corrosion of the heat transfer structure.

As already indicated several times, the heat-conducting body combines a number of functions. The thermal function, namely the derivation of the generated heat of the semiconductor device, has already been explained in detail several times. Furthermore, a heat conducting body, which is at least partially made of an electrically conductive material, simultaneously usable for electrical contacting of the semiconductor element. Thus, the semiconductor element can be supplied with electrical current via the heat conducting body.

Preferably, the channel structure is electrically isolated from the contact surface to prevent unwanted electrochemical processes with the coolant. If the channel structure is introduced into an electrically conductive base body, either the inner surfaces of the channel structure wetted by the coolant can carry an electrical insulation layer or the base body can support outer sides on at least one of the receiving surface. Alternatively, the required electrical insulation can also be achieved by an electrical insulation layer introduced into the cohesive connection of the receiving surface with the contact surface. If the heat-conducting body consists of an electrically insulating or electrically insulated base body, then either an electrical conductor is provided on the base body or an electrical conductor is to be inserted as an intermediate body into the integral connection between the receiving surface and the contact surface. Already the heat conducting body alone also offers the mechanical function of the holder of the semiconductor component, which - as explained below - brings out an outstanding property of the heat transfer device which is essential to the invention. With regard to the stations of the heat flow in the heat transfer device, the heat conducting body can be used as a primary cooling device with convective cooling Heat sink can be considered and the heat removal body as a secondary heat sink, if the heat removal body undergoes convective cooling. The heat transfer device according to the invention now permits an advantageous method (claim 16) for starting up and testing semiconductor components in an intermediate step during their integration into the heat transfer device. For this purpose, a cohesive connection of the semiconductor component to the heat-conducting body is initially set up in a first step. Subsequently, or in a second step, the inlet opening or the inlet openings or the common inlet of the channel structure with a liquid source and the drain opening or drain openings or the common drain of the channel structure is connected to a liquid sink, so that a circulation of liquid in the heat conducting body and allowing operation of the heat conducting body as primary heat sinks. Thereafter, functional tests of the at least one semiconductor component are carried out, wherein at least one parameter is detected in the form of a measured value.

If the semiconductor component has a second contact surface in addition to a first contact surface, then this may be provided with a contact element via which the electrical connection of the semiconductor component, for example to a current source, takes place.

In this way, the semiconductor component can already be operated and tested on the heat conduction body as a primary heat sink without the primary heat sink being thermally connected to a secondary heat sink provided for it at a later stage of construction, ie the heat removal body. This circumstance makes it possible to exclude unsuitable semiconductor devices as needed in advance of and from the further processing in a third step, namely the connection to the secondary heat sink.

In the following, diode laser components have a heat conduction body and one or more laser diode elements. In particular, in assembling a plurality of diode laser components for an array of multiple diode laser components in which the diode laser components are mounted on a common heat sink, it is advantageous if all the diode laser components have similar characteristics, such as an approximately equal operating point (eg, approximately equal power) same current and / or approximate the same emission wavelength for the same current). Here, the laser diode elements may be arranged on a respective own heat conducting body or on a common heat conducting body. The inventive method allows such a selection and compilation of a plurality of diode laser components before their cohesive connection to a common heat dissipation body, from which the diode laser components after assembly can not be recovered without damage - let alone leaving no residue.

At the end of all assembly steps, the channel structure provided for convective heat dissipation in the heat conduction body no longer necessarily has to be usable. It is sufficient for the purposes of the invention that the convective - in particular forced convective - heat dissipation provided channel structure in the heat conducting body in the course of the process steps for the preparation of the heat transfer device and measurement of the laser diode element to the ultimate chosen application at least temporarily for convective cooling of the laser diode element during operation is available.

After successful trial operation of the semiconductor component, which is mounted on it, the heat conduction body is fastened via its connection surface for a conductive heat transfer - also called heat discharge surface - to a heat removal device with a heat removal body, which is designed for convective heat dissipation. Preferably, the convective heat removal there is designed especially for forced convective heat removal and, in terms of its heat removal efficiency, preferably exceeds that of the heat conduction body.

An advantage of the invention is thus that a semiconductor component with a heat-conducting body, in particular a diode laser component, is cooled sufficiently in an intermediate production step exclusively by convective cooling, so that it can be operated and tested, without resorting to a further heat sink.

Alternatively, the heat transfer device also allows a (test) method (claim 17) exclusively using the conductive cooling property of the heat conduction body. In this case, a convective cooling heat removal device is releasably, preferably non-positively, attached to the connection surface of the heat conduction body before functional tests are carried out for at least one semiconductor component. During operation of the semiconductor device, at least one parameter is detected. Due to the sufficient conductive cooling is dispensed with during the test operation on the convective cooling in Wärmeleitkörper. In this way, a testing of the semiconductor component under certain circumstances can be realized in which a convective cooling of the heat-conducting body is not given, for example, because of missing connections for the coolant supply and / or removal. After carrying out the functional test, the connection with the heat removal device is released and the heat conducting body according to the invention brought into connection with the heat dissipation body. Of course, the heat dissipation device may be identical to the heat dissipation body. A further method (claim 18) provides for the heat transfer device according to the invention a test mode of operation with convective cooling of the heat conducting body and the application mode with convective cooling of the heat removal body.

The heat conducting body of the invention allows both the operation of the semiconductor device in exclusively conductive as well as in an exclusively convective cooling. The arrangement of the channels or the channel structure outside the heat source projection of the semiconductor element, the heat dissipation properties are only slightly worse than a heat conducting body, which is designed specifically for the conductive or especially for the convective cooling.

In functional tests with an extremely high load on the semiconductor components, an above-average heat development can be expected. In such a case, it is ensured by convective and at the same time conductive cooling that the semiconductor component is sufficiently cooled and thus protected against damage. Since in the actual use of the semiconductor component such a high load rarely or never occurs over a longer period of time, the combination of the two types of cooling is later no longer necessary and one is limited to one of the two heat removal methods. The invention thus allows performance of functional tests beyond the normal loading of a semiconductor device. The parameters which are detected in the test-wise operation of an electro-optical component, in particular a laser diode element, preferably in the form of a measured value, include the electrical operating current, the electrical operating voltage, the emitted radiation power and the spectrum of the emitted radiation.

With reference to figures embodiments of the invention will be explained in more detail. Show it:

Fig. 1a to Fig. 1k 'the sketchy plan views (uncoated), side views (simply painted) and front views (twice painted) of different variants of embodiments the heat conducting body in a heat transfer device according to the invention with an edge emitting laser diode bar as a heat source;

11 is a side view of a first embodiment of the heat transfer device with a laser diode bar as a heat source.

Fig. 1 m, the top view of the first embodiment;

2a shows the front view of a second embodiment of the heat transfer device with an edge emitting single laser diode as a heat source.

Fig. 2b is a plan view of the second embodiment;

3a shows the plan view of a third embodiment of the heat transfer device with three light-emitting diodes as heat sources.

3b, the side view of the third embodiment;

4a shows the central cross section through an exploded view of a first variant of a fourth embodiment of the heat transfer device, in which the coolant supply and - takes place in and out of the heat conducting body via a connection body on the semiconductor device side facing the heat conducting body;

4b shows the central cross section through the representation of the first variant of the fourth embodiment in the mounted state;

4c shows the central cross-section through an exploded view of a second variant of the fourth embodiment of the heat transfer device, in which the coolant supply and discharge into and out of the heat-conducting body takes place via a heat-absorbing body on the side of the heat-conducting body facing away from the semiconductor component;

4d shows the central cross section through the representation of the second variant of the fourth embodiment in the mounted state; 5a shows the plan view of the first variant of a heat conducting body of a fifth embodiment of the heat transfer device, in which the heat source facing surface away from the heat source, a series of elongated recesses are introduced;

Fig. 5b is a plan view of an electrically insulating insulating plate with two openings as a component of the fifth embodiment of the heat transfer device;

5c shows the plan view of a first variant of a subassembly of a first variant of a diode laser component of the fifth exemplary embodiment of the heat transfer device formed by applying the insulating plate to the first variant of the heat conduction body;

5d shows the central cross section through a first variant of a diode laser component of the fifth embodiment of the heat transfer device according to the invention;

5e the plan view of an electrically insulating layered body as a component of a second variant of the fifth exemplary embodiment of the heat transfer device, in the surface of which a series of elongate recesses are introduced;

FIG. 5f is a plan view of a composite of insulating plate and the electrically insulating Schichtkör- per part of the second variant of the fifth embodiment of the heat transfer device;

5g the central cross section through a second variant of a diode laser component with a second variant of the heat conducting body of the fifth embodiment of the inventive heat transfer device;

5h shows the plan view of a third variant of a heat conduction body of the fifth embodiment of the heat transfer device, in which the heat source facing surface away from the heat source, a series of elongated recesses are introduced;

FIG. 5i shows the plan view of a composite of the fifth exemplary embodiment of the heat transfer device formed by applying the insulating plate to the third variant of the heat conducting body; FIG. 5j shows the central cross section through a third variant of a diode laser component with the third variant of the heat conducting body of the fifth embodiment of the heat transfer device according to the invention;

5k the central cross section through a fourth variant of a diode laser component with a fourth variant of the heat conducting body of the fifth embodiment of the heat transfer device according to the invention;

5I shows the central cross section of a fifth exemplary embodiment of the heat transfer device with the fourth variant of a diode laser component, in which the coolant supply and removal into the heat conduction body takes place via a connection body;

6a is a plan view of the heat conducting body of a sixth embodiment of the heat transfer device, in which a number of columns are introduced into a base body;

6b shows the central cross section of the sixth embodiment of the heat transfer device according to the invention in the form of a diode laser component, in which the coolant is supplied into the heat conducting body via a heat absorption body;

7a shows the plan view of the heat conducting body of a seventh embodiment of the heat transfer device, in which three fields of bores are introduced into a base body;

Fig. 7b is the central cross section of the heat transfer device of the seventh embodiment;

7c shows the central cross section of a first preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser;

7d shows the central cross section of a second preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser; and 7e the central cross section of a third preferred embodiment of the seventh embodiment of the heat transfer device in the form of a diode laser.

7f shows the central cross section of a fourth preferred embodiment of the seventh exemplary embodiment of the heat transfer device in the form of a diode laser stack.

FIG. 8a shows the plan view of a first variant of a heat conduction body of an eighth exemplary embodiment of the heat transfer device, in which channels are introduced eccentrically into the heat conduction body; FIG.

8b is a side view of a diode laser component with the first variant of a heat conducting body of the eighth embodiment of the heat transfer device;

FIG. 8c shows the plan view of a second variant of a heat conduction body of the eighth embodiment of the heat transfer device, in which channels are introduced eccentrically into the heat conduction body; FIG.

8d the side view of a diode laser component with the second variant of a heat conducting body of the eighth embodiment of the heat transfer device;

8e the central cross section of the eighth embodiment of the heat transfer device in the form of a diode laser stack of diode laser elements with the first variant of the heat conducting body.

The elements shown in the figures are not to scale and the relationships of the elements to each other are only illustrative.

The reference numerals used in the figures are composed of three digits (XYY), wherein the first digit (X) designates the embodiment and the second and third digits (YY) designate the number of the element itself. Like-numbered (YY) elements are the same or similar in nature in the various embodiments, and will be described in detail only upon their first use in order to provide improved readability and intelligibility of the description which follows. Elements or functional units of the illustrated embodiments are interchangeable and corresponding combinations are explicitly included here.

By way of introduction, the description of the exemplary embodiments is expressly emphasized that the thermal conduction body according to the invention is not limited to a specific arrangement with regard to the position of the connection surface to the receiving or contact surface. Furthermore, formed as elongated channels parts of the channel structure are limited neither to a specific orientation of the channel longitudinal axes with respect to the receiving or contact surface nor to a certain extent of their extension, especially in the longitudinal direction even to a certain location outside the heat source projection volume in the heat conducting body. Finally, inlet and outlet openings for supplying coolant to the channel structure are also not fixed to a specific configuration with regard to their position relative to one another and with respect to the receiving surface or contact surface. To illustrate this universality inherent in the invention, a heat conduction body serving as a cuboid having six outer surfaces - a pair of two opposing upper and lower major surfaces, a pair of two opposing front and rear surfaces, and a pair of two opposing left and right side surfaces - Is formed, wherein in each case a first surface pair is oriented perpendicular to the other two surface pairs: The attachment surface can be arranged on the same surface of the cuboid as the receiving surface, on a surface opposite her or an angularly oriented to her surface. It can be on one or more surfaces.

The channel longitudinal axes may be aligned parallel to a normal of each of the three pairs of faces, individually or in sections, also parallel to two or more normals of the three pairs of faces. The channel longitudinal axes may also be oriented parallel to one or more, inclined to all three Fächenpaarnormalen, direction or directions as well as partially or completely random. If, in an at least approximately parallel arrangement of the contact surface to the receiving surface, the receiving surface is not flush with at least one edge of two surfaces, then in principle any region of the heat conducting body outside the heat source projection is suitable for containing at least part of the channel structure. Without limiting the generality, if the receiving surface is located on the upper major surface apart from an edge having an adjacent surface, the heat source projection extends from the upper to lower major surface through the heat conducting body, and the channel structure at least in sections between the heat source projection and at least one of the surfaces Front surface, back surface, left side surface and right side surface lie. Alternatively or optionally, the channel structure can also be located away from the heat-conducting body regions, which in a cross-like widening of the extent of the heat source projection volume in the direction of said surfaces Front surface, rear surface, left side surface and right side surface are arranged in the heat conducting body.

Inlet and outlet ports may be disposed on one and the same outer surface of the cuboid or on different, opposite or angled surfaces that are oriented toward each other. They can be arranged on the same surface both as the receiving surface and as the attachment surface, as well as on one or more of the receiving surface or the attachment surface or on one or two surfaces or surfaces oriented at an angle to the receiving surface or the attachment surface. In particular, one or both openings may be arranged in the connection surface.

A detail of the variety of possible configurations is reflected in the sketchy plan views (uncoated), side views (simply painted) and front views (two-stroke) of different variants of exemplary embodiments of the heat conduction bodies in a heat transfer device according to the invention with an edge emitting view shown in FIGS. 1 a to 1 k ' Laser diode bar as heat source. They illustrate a variety of arrangements that can take the contact surfaces, receiving surfaces and bonding surfaces with each other and with respect to the channel structure, and the various configurations and arrangements of channel structures in Wärmeleitkörpern.

By way of example, for the sake of clarity, reference numerals are used only in FIGS. 1a and 1a ', 110 designating the checkered shaded laser diode element, 113 the directional arrow of the light emission, 120 the heat conducting body, 122 the heat source projection shown dotted in the heat conducting body, with 123 possible, represented by a thick bar, connecting surfaces for cohesive attachment of a heat sink, with the dashed outlines one or more channels of the channel structure according to the invention. Furthermore, a presentation of possible or possibly indispensable inflows and outflows as well as inlets and outlets is dispensed with in order to focus on the essential aspects of the following variants. In FIGS. 1b to 1k ', the light emission is always directed to the left in the case of side and top views, and in the case of front views from the plane of the drawing in the direction of the viewer. While in Fig. 1a and 1a 'only a single channel, which is oriented parallel to the contact surface and perpendicular to the light emission direction, is arranged in the heat conducting body, in the follower figures 1b to 1k' always several, mutually parallel channels in the heat conducting body. While in Fig. 1a and 1a 'only two connection surfaces for cohesive connection with one or more heat dissipation bodies are located - namely a first connection surface, on the The underside of the heat conduction body opposite the laser diode bar is arranged, and a second connection surface, which is arranged perpendicular to the contact surface or parallel to the light exit surface on a rear side of the heat conduction body facing away from the light emission direction, are also illustrated in the following figures 1b to 1k ', further connection surfaces, for example can be arranged on a front side of the heat conduction body lying in the light emission direction, and on a top surface of the heat conduction body facing the connection surface, on a side surface of the heat conduction body which is on the left relative to the light emission direction and on a side surface of the heat conduction body which is on the right with respect to the light emission direction, both side surfaces being perpendicular to the top side. and underside of the heat conducting body are aligned as well as perpendicular to the front and back of the Wärmeleitkörpers.

Fig. 1b shows a heat conducting body in which a plurality of channels are arranged with their longitudinal axes parallel to each other and parallel to the light emission direction in the heat conducting body.

Fig. 1c shows a heat conducting body in which a plurality of channels with their longitudinal axes parallel to each other, parallel to the laser bar width direction, that is: parallel to the contact surface and perpendicular to the light emission direction, are arranged in the heat conducting body.

FIGS. 1b 'and 1c' show that there are various possibilities in side view to execute these channels. Thus, they can be introduced as at least partially closable cooling fins both in the O- side of the Wärmeleitkörpers and in the underside of the Wärmeleitkörpers, are completely introduced into a single layer or in multiple layers in the heat conducting body, or continuously from the top to bottom of the Extend Wärmeleitkörpers.

Examples of the integration of an intermediate body in the cohesive connection of the heat conducting body and the laser diode bars are shown in FIGS. 1d to 1e '. As can be seen from both views, the contact surface of the laser diode bar and the connection surface of the heat conducting body are perpendicular to each other, which leads to the heat source projection are arranged completely outside of the heat body in the intermediate body. According to the invention, the position of the channel structure in the heat-conducting body is arbitrary in such an arrangement, with special variants being able to be given priority as needed. As shown in the plan view of Fig. 1d, a plurality of channels may be arranged with their longitudinal axes parallel to each other and parallel to the light emission direction in the heat conducting body. The side views in FIG. 1 d 'show that different channel layers can be stacked one above the other in the direction perpendicular to the contact surface, with a heat conduction region in the heat conduction body of the can be left out, which is defined by a projection of the receiving surface perpendicular to the rear attachment surface.

The plan view of Fig. 1e shows two groups, each with a plurality of channels, which are arranged with their longitudinal axes parallel to each other and perpendicular to the contact surface in the heat conducting body. In this case, a heat source projection which is extended against the light emission direction as far as the rear attachment surface remains free of channels, so that unimpeded heat conduction from the receiving surface to the attachment surface results.

The side views in Fig. 1e 'show that the channels may be embedded in the heat-conducting body, or may extend continuously from the top to the bottom.

1f to 1g 'show the arrangement of two channels each, which are arranged one above the other in a laser diode element in the light emission direction upstream region or projection of the heat conducting body. The arrangement of Figs. 1f and 1f 'differ from the arrangement of Figs. 1g and 1g' in that in the first case, the heat conducting body is formed with a step which rises above a shoulder behind the projection and the receiving surfaces, while in the second case, an intermediate body carrying the laser diode bars is fastened on the receiving surface of the heat conduction body at a sufficient distance from the front end face.

1h to 1i "show the arrangement of channels on both sides of the heat source projection, wherein the channels are arranged on the left and right with respect to the light emission direction in the heat conduction body .. In Fig. 1h or 1h" two channels are parallel to each other and parallel to the light emission direction in the heat conducting body arranged. In Fig. 1i and 1i "are each a group of channels with their longitudinal axes parallel to each other and arranged perpendicular to the contact surface in the heat conducting body and extending continuously from the top to the bottom.

As FIGS. 1j to 1k 'show, more complex channel structures may also be arranged in the heat conduction body, for example those which connect features of the channel structures shown in FIGS. 1f to 1g' to features of the channel structures illustrated in FIGS. 1h to 1i ".

Thus, in the example shown in FIGS. 1j and 1j, two superimposed U-shaped channels extend around the heat source projection with the center leg of the channels being in the region of a projection of the heat conducting body opposite the laser diode bar. In the example illustrated in FIGS. 1k and 1k ', the channel structure extends almost completely around the heat source projection, with a reversal of the coolant flow being provided in the central region of the projection which allows the channels to be connected via two off-center ports To connect drainage openings to a coolant circuit and on the other hand, the flow of fluid largely fluidly form symmetrically to the heat source, so that the laser diode in operation no appreciable temperature difference between its left and right side undergoes, as is possible in contrast to the previous example.

11 shows a sketch of the side view of a first exemplary embodiment of the heat transfer device with a heat conducting body 120 and a semiconductor component 110 as the heat source, wherein the semiconductor component 110 - here an edge emitting laser diode bar - is arranged on the edge of the front side of the heat conducting body 120. The light emission direction of the laser diode bar is illustrated by an arrow 113. In addition, the contact surface of the semiconductor element 110 facing away from the heat-conducting body 120 is shown by reference numeral 112.

In the rear region, that is to say of the laser diode bar opposite to the light emission, of the heat-conducting body 120, a first channel structure 130 is formed which has a first inlet 141 and a first outlet 151. The channel structure 130 is in this case designed as a microchannel structure. On an upper side of the heat-conducting body 120 facing the laser diode bar, an inlet opening 140 is formed for receiving a coolant, whereby the coolant of the first channel structure 130 can be fed. Likewise, a drain port 150 is coupled to the first drain 151 to drain the coolant from the first channel structure 130. The underside of the heat-conducting body 120 opposite the upper side forms a connection surface 123, which allows the heat to be transferred to a heat-removal body fastened there (see Figures 4a / b and 5I) or to a heat-absorbing body of a heat-removal device containing the heat-removal body (see Fig. 7c).

The heat source projection 122 of the semiconductor component 110 perpendicular to its contact surface is - as is illustrated by the dashed boundary line - arranged in the front region of the heat conducting body 120 below the semiconductor device 110. In the projection volume itself, no channel structures are formed, and the heat conduction body 120 is formed in the region of the heat source projection for the reduction of the thermal resistance without a cavity and from a single piece.

The described heat conducting body 120 makes it possible to convectively dissipate the heat of the semiconductor component 110 by means of a coolant flowing through the first channel structure 130. Alternatively, the heat-conducting body 120 is conductively conductive with or without a mediating heat-absorbing body (see Fig. 7c) a connected heat dissipation body coolable. Both heat dissipation variants can be used simultaneously or individually and thus allow a particularly flexible use of the heat conducting body 120 in the heat transfer device.

In Fig. 1m the sketchy representation of the top view of the first embodiment is shown. The multiplicity of the first channel structures 130 is in this case designed such that the supply of the coolant into the first inlet 141 of the first channel structure 130 takes place through the common inlet opening 140. Here, the channels of the first channel structure 130 are arranged in parallel and coupled together by a common inlet 141. Not visible is the common drain opening 150, which allows a discharge of the coolant. Also in Fig. 1b, the emission direction of the laser bar is represented by arrows 113. The large number of arrows illustrates that a laser diode bar with multiple emitters is used.

A second exemplary embodiment is shown in FIGS. 2 a and 2 b, where the heat generating semiconductor component 210 is a single laser diode. Fig. 2a shows a sketchy representation of the front view. The semiconductor component 210 is applied centrally on the heat conducting body 220, wherein the single laser diode is arranged on the edge of the front side and the emission direction thus lies out of the image plane in the direction of the observer.

In addition to the first channel structure 230, a second channel structure 231 is formed, which is connected in parallel to the flow of the first channel structure 230. Like the first channel structure 230, the second channel structure 231 has a second inlet 242 or a second outlet 252, which directs the coolant from the inlet opening 240 to the second channel structure 231 or from the second channel structure 231 to the outlet opening 250.

The channel structures 230 and 231 are formed on the left and right of the projection 222, which is marked and bounded by the dashed lines in FIG. 2a. Also in this Wärmeleitkörper 220 run no channels or other cavities in the range of the projection in order to keep the thermal resistance as low as possible and thus to take advantage of the invention to take advantage.

As can be seen in the plan view of the second exemplary embodiment in FIG. 2b, the channel structures 230, 231 are arranged laterally of the longitudinal sides of the largest lateral extent of the semiconductor element 210. The individual channels of the respective channel structures 230, 231 are in this case arranged parallel to one another and, with respect to the longitudinal axis, are the largest lateral extent of the semiconductor element 210 aligned vertically. The main extension of the individual channels takes place in the vertical direction, so that the coolant flows from top to bottom.

The first and second inlets 241 and 242 of the first and second channel structures 230 and 231 are coupled together, so that via the single inlet opening 240 cooling liquid is supplied. Also, the single drain opening 250 is sufficient to drain cooling liquid from the first and second drains 251 and 252.

3a and 3b show two views of a heat transfer device according to a third exemplary embodiment for cooling three semiconductor components 310, in this case light-emitting diodes, of which a first emits in the blue spectral range, a second in the green spectral range and a third in the red spectral range. The light emission directions are indicated by the three arrows 313. For separate electrical actuation, the three light-emitting diodes are applied via electrically separated base conductors 325 to an electrically insulating base body 325 which together with the conductor tracks 324 and 326 forms the heat conducting body 320 and two channel structures 330 and 331, in this case microchannel structures , having.

Non-designated bonding wires form an electrical connection of the electrical contact surfaces 312 of the light emitting diodes facing away from the heat conducting body 320 with the electrical conductor tracks 326, while the contact surfaces facing the heat conducting body 320 rest directly on the electrical conductor tracks 324.

This arrangement is suitable for example as a light source for video projectors, which can be operated depending on the choice of heat dissipation method in two different classes of light intensity. In a group with a low light intensity, the heat removal device (not shown) connected to the connection surface 323 can be used as a heat sink, in which the heat is previously spread over a heat absorption body and passed directly or via a Peltier module into a fin cooler, which transfers the heat to passing ambient air emits. At a high light intensity, the heat-conducting body 320 can be used as a heat sink with convective release of the heat to a liquid cooling medium circulating through the microchannels.

In a fourth embodiment, of which a first variant is shown in FIGS. 4a and 4b, the heat-generating semiconductor component 410 is a laser diode bar. FIG. 4a shows the central cross section through an exploded view of a diode laser component 415 and FIG. 4b shows the FIG Diode laser component 415 in cross-sectional view in the assembled state. In this exemplary embodiment, the coolant supply and removal into and out of the heat-conducting body 420 takes place via a connection body 480, which is fastened on the side of the heat-conducting body 420 facing the laser diode element.

The heat conducting body 420 is a microchannel heat sink made by joining five layers of copper. The laser diode bar is attached with indium solder at the edge to the front side of the heat conducting body 420. Furthermore, an insulating plate 460 is fastened directly on the side of the heat conduction body 420 facing the semiconductor component 410 away from the semiconductor component 410 on the heat conduction body 420. The insulating plate 460 is a polyimide film that prevents direct current flow between the heat conducting body 420 and the terminal body 480. In addition, an electrically conductive contact element 470 for electrically contacting the semiconductor component 410 on the heat conducting body 420 facing away from the contact surface 412 of the semiconductor device 410 is used. The electrical contact element 470 is a copper sheet strip, which is attached to the laser diode bar with electrically conductive adhesive.

The connection body 480 is arranged on the contact element 470 and is formed from an electrically insulating base body 482. An electrical layer 483 on the electrically insulating base body 482 is a manufacturing component of the connection body 480 and forms an electrical contact with the electrically conductive contact element 470. A first connection element 481 is designed for electrically contacting the electrical layer 483 of the connection body 480, which is electrically connected to the electrically conductive contact element 470, and allows it to be connected to a current source (not shown).

A first coolant connection element 448 is fastened to the connection body 480 and serves to receive a coolant and to supply the coolant to the inlet opening 440 in the heat conduction body 420. A flow 447 of the connection body 480 is configured for the supply line such that the coolant flows through a first contact element opening 471 and a first Isolierplattdurchbruch 461 in the inlet opening 440 of the Wärmeleitkörpers 420 can be conducted and from there into the channel structure 430 weitergelei- tet is. An inlet sealing ring 445 seals the inlet opening 440 from the coolant flowing from the connection body 480 into the inlet opening 440.

For dispensing the coolant, the connection body 480 has a second coolant connection element 458. The coolant is removed from the channel structure 430 to the drain opening 450 of the heat conducting body 420. conducts and from there through a second Isolierplattdurchbruch 462 and a second contact element breakthrough 472 transferred to a return 457 of the connection body 480. An outlet sealing ring 455 is used on the return side for sealing.

The heat-conducting body 420 is adhesively attached to an electrically conductive heat-absorbing body 490 made of copper, which has a second electrical connection element 491, with an electrically conductive adhesive which is applied to the connection surface 423. The connection element 491 is designed to make contact with at least one electrical connection of a current source (not shown), wherein the connection of the current source for connecting a current source, which is coupled to the first connection element 481, is opposite in polarity.

The heat transfer device 415 is completed by a heat removal body 498 fastened to the heat absorption body 490, which has a heat transfer structure (not shown) for alternative or additional convective heat transfer to the channel structure in the heat conduction body. In the present case, this heat transfer structure is a rib structure, which is flown through by a fan or a fan with ambient air. The heat transfer from the heat-receiving body 490 to the heat-removal body 498 is improved by an electrically insulating heat-conducting foil 499 placed between the heat-absorbing body 490 and the heat-dissipating body 498.

The heat transfer device allows in this fourth embodiment, particularly advantageous to power the laser bar. The first connection element 481, which is coupled to a first connection of a current source, is electrically coupled by the metallic layer 483 and the contact element 470 to the contact surface 412 of the semiconductor component 410 facing away from the heat conduction body 420. At the same time, the insulating plate 460 prevents the electrical contacting of the heat conducting body 420 with the contact element 470. The contact surface 411 of the semiconductor component 410 facing the heat conducting body 420 is electrically conductively coupled to the heat conducting body 420. Likewise, the heat conducting body 420 and the heat receiving body 490 are electrically conductive and both are connected via the second connection element 491 with a second, opposite to the first connection terminal of a power source. The sealing rings 445 and 455 additionally prevent current from coming into contact with the cooling liquid.

As indicated by the dashed line, no channel structure is formed in the projection of the base of the laser bar, which allows the laser diode element to be cooled both convectively and conductively. The projection comprises in particular the region of the heat conducting body 420, the between the receiving surface (see Fig. 6a, 5c, 6a and 7a) and the semiconductor device 410 is located. In addition, the heat-absorbing body 490 also has no channels in this area, so that in the case of purely conductive cooling, a very low thermal resistance is also to be found here.

The heat conducting body 420 combines a number of functions in the heat transfer device. First, it allows the convective and conductive cooling of the semiconductor device, so has a thermal function. At the same time it serves as an electrical contact and allows the supply or removal of electricity. And thirdly, the heat-conducting body 420 can also be used for fastening the heat-absorbing member 490.

A second variant of the fourth embodiment is shown in Figs. 4c and 4d. The second variant differs from the first variant essentially in that the cooling liquid is not supplied via the connecting body 480 to the heat conducting body and discharged from the heat conducting body, but via the heat receiving body 490. Another difference from the first variant is that the electrically conductive Contact element 470 consists of a plurality of bonding wires, which are fastened with their first ends to the substrate-side contact surface 412 of the laser diode bar 410 and with their second ends to a metal layer 467 of a formed as a layered body 465 electrical insulation body. The layered body 465 consists of an insulating layer 466 made of aluminum oxide, which, for mechanical reasons of symmetry, is provided with a metal layer 468 made of copper on its side facing the heat-conducting body 420 and with a metal layer 467 made of copper on its side facing away from the heat-conducting body 420.

5a-l serve to illustrate four different variants of a fifth embodiment of the heat transfer device according to the invention, which is characterized in that a number of grooves 530 away from the semiconductor device 510 - here the laser diode bar 510 - in one, the semiconductor device facing and Contact surface parallel surface of the Wärmeleitkörpers 520 are introduced. The four different variants represent four different embodiments of heat-conducting bodies 520 characterized in this way. Specifically, FIGS. 5a-d represent components of a first variant, FIGS. 5e-f components of a second variant, FIGS. 5h-j components of a third variant, FIG. 5k the component of a fourth variant and FIG. 5I the heat transfer device 515 in a fourth variant. In all four variants, a series of grooves 530 are introduced into the said surface of the heat conducting body 520 (FIGS. 5a, 5e, 5h). The introduction can be achieved by mechanical processing such as sawing or milling, chemically by isotropic or anisotropic etching or by laser cutting and by combinations of the mentioned methods.

In all four variants, by means of an insulating plate 560 (FIG. 5b) made of aluminum oxide with two openings 561 and 562, which are opposite sections of the row of grooves 530 in the region of the row of slots 530, the row of slots 530 is at least in one section, which is opposite the region between the two openings 561 and 562, sealed to a closed channel structure. In this case, the grooves 530 are aligned with respect to their longitudinal axes parallel to at least one connecting line between the two openings 561 and 562, so that a flow through the Nutenreihe 530 by the inlet of a cooling liquid in the first opening 561 and outlet of the cooling liquid through the second opening 562 is possible ( Fig. 5c, Fig. 5f, Fig. 5i). The mounting of the insulating plate 560 is preferably carried out after the laser diode bar assembly on the heat conducting body 520 using an adhesive. Alternatively, instead of the aluminum oxide ceramic as an insulating element, an aluminum nitride ceramic is used, which is provided on both sides with a copper layer and on the side facing away from the heat-conducting body has a projecting beyond the ceramic contact lug made of copper. In this case, analogously to the second variant of the fourth exemplary embodiment, the copper layer facing the heat-conducting body 520 is soldered to the cooling structure before the laser diode bar assembly and a row of bonding wires is used as the electrical contact element, electrically connecting the copper layer facing away from the heat-conducting body 520 to the free laser diode contact surface connect.

In all four variants of diode laser components 514 of the fifth exemplary embodiment, the electrical contact element 570 is a copper sheet which has been fastened with electrically conductive adhesive to the contact surface of the laser diode bar facing away from the heat conduction body, has a connection element 581 for fixing an electrical contact, and has an opening 571, which is in register with the first opening 561 as well as with the second opening 562 of the insulating plate 560 (FIGS. 5d, 5g, 5j, 5k). Thus, the coolant supply to the first opening 561 and the coolant discharge from the second opening 562 can be made through the one opening 571 in the contact element. By the insulating plate 560, the contact element 570 is electrically separated from the slot row 530. The differences between the four variants of heat-conducting bodies are clear from the cross-sectional views of FIGS. 5d, 5g, 5j and 5k:

In the first variant, the heat conduction body 520 is made in one piece and is electrically conductive, so that the ribs between the grooves 530 are in electrical connection with the contact surface of the laser diode bar 510, which is firmly attached to the receiving surface (FIG. 5d). For electrical insulation of the channel structure relative to the coolant, it can be provided on the surface with an electrically insulating layer.

In the second variant, the heat-conducting body consists of an L-shaped main body 525 and a laminated body 565, wherein the receiving surface is arranged on the end face of the shorter leg of the L-shaped main body 525 and the plate on the, parallel to the receiving surface, leg inner surface of the longer leg of the L-shaped main body 525 is attached (Fig. 5g). The main body consists of a carbon-metal composite whose thermal expansion coefficient approximately corresponds to that of the laser diode bar. The layered body 565 consists of an insulation layer 566 made of highly thermally conductive aluminum nitride (AIN) which, for mechanical symmetry reasons, is provided with a metal layer 568 made of copper on its side facing the main body 525 and with a metal layer 567 of copper on its side remote from the main body 525 is. In the metal body 567 facing away from the base body, the grooves 530 are introduced (FIG. 5e). The ratio of the layer thicknesses of the copper and aluminum nitride layers to one another is preferably selected such that the layered body in the layer plane (in-plane) has a thermal expansion coefficient which approximately corresponds to that of the main body 525. Thus, both components, laser diode bars 510 and composite 565, by means of a highly reliable gold-tin solder cohesively to the body 525 are soldered. In this arrangement, moreover, the ribs between the grooves 530 are advantageously electrically insulated both from the electrical potential at the contact surface of the laser diode bar 510 facing the receiving surface and from the contact surface of the laser diode bar 510 facing away from the receiving surface, so that the coolant is exclusively electrical wetted neutral components.

The same double electrical insulation is achieved with the heat-conducting body 520 of the third variant (FIG. 5j). It consists of a laminated body in which a main body 525 consists of a highly thermally conductive, electrically insulating or superficially electrically insulated material and two on each other opposite surfaces of metal layers of copper. It is the laser diode element facing copper layers in two electrically separate subsections of a first layer 524 and a second layer 526 subdivided to keep the cooling structure floating, which is introduced in the form of grooves 530 in the second metal layer 526. The first metal layer 524 provides the receiving surface 521 for mounting the laser diode bar 510 and is also suitable for power supply to and from the laser diode bar 510. For this purpose, it extends as a current-carrying layer 524 from the side of the main body facing the laser diode bar 510 to the side of the main body facing away from the laser diode bar 510.

In the fourth variant of the heat-conducting body, the main body 525 is subdivided into further layers - two electrically insulating layers and an intermediate body arranged between the two electrically insulating layers, which in turn may consist of several layers (FIG. 5k). The part of the first metal layer 524 facing the laser diode bar is in electrical connection with the part of the first metal layer 524 facing away from the laser diode bar via a through-connection which extends through the main body (not shown).

FIG. 5I illustrates the integration of the fourth variant of the diode laser component 514 from FIG. 5k into a fifth exemplary embodiment of the heat transfer device according to the invention. Similarly, the first, second and third diode laser components shown in FIGS. 5d, 5g and 5j may be integrated into the heat transfer device.

The coolant supply and removal to and from the heat conduction body 520 via a connection body 580 which is fixed on the laser diode bar 510 side facing the heat conducting body 520, wherein the coolant wets only electrically neutral components. Recesses 546 and 556 serve to receive the inlet sealing ring 545 and outlet sealing ring 555, respectively. The first insulation plate breakthrough 561 is provided for transferring the coolant from the connection body 580 into the heat conducting body 520, while the second insulation plate opening 562 for transferring the coolant from the heat conducting body 520 into the connection body 580 is provided.

The heat-conducting body 520 is finally fixed with indium solder on a heat-absorbing body 590 made of copper, which transfers the heat absorbed by the heat-conducting body 520 heat to a heat dissipation body, not shown, and transmits the electric current from an electrical connection element 591 to the metallic current-carrying layer 524.

In a - not shown - preferred development of the channel structure of this fifth embodiment, two rows of intersecting grooves in the surface of the Wärmeleit- introduced body so that in the groove pattern thus formed rhombohedral columns can be lapped by the coolant to form an increased heat input.

In the following two exemplary embodiments six and seven, the cooling channels X30 can not only be introduced directly into the heat-conducting body X20, but also into a substitute body which can be structured more easily and which is connected to a part of the heat-conducting body X20 or into a continuous cylindrical recess in the heat-conducting body X20 is used.

The plan view of the heat conducting body 620 of the sixth embodiment of the heat transfer device is shown in FIG. 6a. In this embodiment, the channel structure 630 is formed by a series of columns, which are introduced in a main body 625 and extend from the heat source side facing the main body 625 on the opposite, the heat source side facing away from the main body 625. The heat-conducting body 620 has a main body 625 of electrically insulating CVD diamond with the first metal layer 624 attached to the diamond, a copper foil, onto which the semiconductor component 610, here the laser diode bar, with the method described in DE 19644941 C1 by means of a gold-tin -Lotes attached and broken into sections.

6b illustrates the central cross-section of the sixth embodiment of the heat transfer device, in which the coolant is supplied into the heat-conducting body 620 via a connection body 680 which is fastened on the side of the heat-conducting body 620 facing the laser diode element 610. The removal of coolant from the heat-conducting body 620 takes place via the heat-absorbing body 690, which is fastened on the side of the heat-conducting body 620 facing away from the laser diode element 610.

The heat-absorbing body 690 is part of a heat dissipation device according to the invention, which is not completely shown, and is formed from a composite of silicon, silicon carbide and diamond, as described in WO 2002 042 240 A2. On this heat-absorbing body 690 of the heat-conducting body 620 is fixed by means of a tin-containing solder. The insulating plate 660 is a ceramic substrate. The electrically conductive contact element 670 is a copper sheet strip, which is attached to the laser diode bar with electrically conductive adhesive.

Instead of directly into the diamond body, the channels can also be introduced by means of anisotropic etching in a replacement body made of silicon, which is inserted into a continuous cylindrical recess in the diamond body. In this exemplary embodiment, the cooling liquid can be supplied via the already described first coolant connection element 648 of the connection body 680. From there, it can be guided through the gaps in the main body 625 and thus through the heat-conducting body 620, wherein the heat is absorbed by the coolant and can be delivered via the second coolant connection element 658 of the heat-absorbing body 690.

Figs. 7a-e show the heat transfer device of a seventh embodiment. 7a shows a plan view of the heat conduction body 720 of the exemplary embodiment. The heat conduction body 720 has the main body 725 with two groups of bores which extend in three fields from the side facing the heat source of the main body 725 to the opposite, the heat source facing away, Side of the body 725 extend. The heat conducting body 720 consists of a diamond-metal composite, which is electrically insulated on the surface. Three conductor tracks are applied to the main body 725, which surround the main body 725 as a metal layer of copper in each case in a ring-shaped or U-shaped band and thus conduct electrical current from the underside of the main body 725 facing away from the laser diode bar to the laser diode bar Allow top of the body 725 and vice versa. A first conductor trace, the first metal layer 724, is electrically connected to a first contact surface of the semiconductor device 710, wherein for receiving the semiconductor device 710, the receiving surface 721 is provided, and extends in a U-shape over a perpendicular to the top and bottom inclined front end face of the main body 725 from the top to the bottom. A second conductive line is configured to be electrically connected to a second electrical contact surface of the semiconductor device 710. The second conductor surrounds the main body 725 as a metal layer 775 in an annular manner perpendicular to the end face and the top / bottom oriented side surfaces, and is at least partially disposed on the semiconductor device 710 side facing the base body 725 and thereby in particular for power supply or -abführung to or by the semiconductor device 710 suitable. A third conductor, the second metal layer 726, has no electrical function but only serves to maintain a large-area planar mounting surface on the top and bottom of the Wärmeleitkörpers. The third conductor extends U-shaped over the front side of the main body 725 opposite rear end surface from the top to the bottom. In addition, in the region of the third conductor run, the openings 727 and 728 are designed to supply and discharge coolant into the first and second passage structure 730 and 731, which is formed by the bores in the main body 725. In Fig. 7b is shown a central cross section of the heat transfer device of the seventh embodiment. The section is taken along the dashed line of Fig. 7a. In addition to the heat conduction body 720 of FIG. 7 a, the connection body 780 and the heat absorption body 790, to which the coolant connection elements 748 and 758 are attached, are shown. The coolant supply and removal takes place via the heat-absorbing body 790, which is fastened on the side facing away from the laser diode element of the heat-conducting body 720. The coolant flow in this case leads from the first group of a field of bores, the first channel structure 730, via a cavity 732 in the connection body 780, which is fastened to the side of the heat conduction body facing the laser diode element, to the second group of bores, the second channel structure 731 are arranged in two fields of holes on both sides of the first field of holes. The cavity 732 is formed on the semiconductor component 710 facing side of the Wärmeleitkörpers 720, allows the fluidic connection between the two channel structures 730 and 731 and causes the second channel structure 731 of the first channel structure 730 is connected in series. At the same time it is ensured in this arrangement that the coolant wets only electrically neutral areas.

The semiconductor component 710, here the laser diode bar, is fastened on the heat conducting body 720 by means of a gold-tin solder. The electrical contact element 770 is a thin plate of a tungsten-copper composite, which is also attached to the laser diode bar with gold-tin. An electrical connection element 774 made of a metal foil of laser diode bar thickness is arranged between the electrically conductive contact element 770 and the metal layer 775 and connects them to one another in an electrically conductive manner.

The heat absorption body 790 in this embodiment consists of a composite of copper and aluminum nitride plates, wherein only the outer, the heat conducting body 720 facing metal layers are shown th. The first metallic layer 793 on the electrically partially insulated heat-receiving body 790 is in electrical contact with the metal layer 724 of the heat-conducting body 720. The second metallic layer 794 is similarly in electrical contact with the metal layer 775. Finally, the metallic layer 795 is also in electrical contact with the metal layer 726; however, this, like the metal layer 726, has no electrical function.

The metallic layer 795 also has an opening 796, just as the second metal layer 726 has an opening 729 on the side facing away from the semiconductor component, which is provided for transferring the coolant from the heat-receiving body 790 into the heat-conducting body 720. Furthermore, FIG. 7b shows the first coolant connection element 748, by means of which coolant can be supplied via the inlet 747 into the first channel structure 730.

Fig. 7c shows the central cross section of a first preferred embodiment of the seventh exemplary embodiment. In this case, the heat transfer device is in the form of a diode laser component in which the heat absorption body 790, which is fastened on the side of the heat conduction body 720 facing away from the laser diode element, has a Peltier module 797. The Peltier module 797 is thermally connected on its cold side to the heat source and on its hot side to a heat removal body 798 according to the invention as a heat sink. To use the Wärmeleitkörpers 720 as a heat sink, a connection body 780 in the form of a combined Kühlmittelzuführ- and -abführelementes with coolant connection elements 748 and 758 and forward and return lines 747 and 757 on the laser diode element facing side of the Wärmeleitkörpers 720 is connected and to supply the Wärmeleitkörpers 720 with a liquid coolant used.

The opening 796 in the metallic layer 795 of the heat absorption body is designed such that it allows the flow of the coolant from the first group of bores 730 into the second group of bores 731.

In a second and third preferred embodiment of the seventh exemplary embodiment, shown in FIGS. 7 d and 7e, the heat removal body 798 is soldered directly to the connection surface 723 on the side of the heat conduction body 720 facing away from the laser diode element with a tin solder.

A channel structure 735 is inserted into a stack of copper layers in the heat sink 798 which is sandwiched between two aluminum nitride plates (not explicitly shown).

The coolant supply and drainage to and from the channel structure 735 via a first coolant connection element 738, which is attached to the heat dissipation body 798. In addition, an inlet 736 for coolant is formed in the heat removal body 798, which allows the supply of coolant to the channel structure 735. For discharging the coolant from the channel structure 735 to a second coolant connection element, not shown, a drain 737 is formed in the heat removal body 798.

In the operation of the heat transfer device in the second development - as shown in Fig. 7d - is dispensed with a use of the Wärmeleitkörpers 720 as a heat sink, as well as the cooling by means of the first channel structure 730 is omitted.

Fig. 7e shows a central cross section through a third preferred embodiment of the seventh embodiment. The heat removal body 798, on the side facing away from the laser diode element the heat conducting body 720 is fixed, has the channel structure 735 already shown in Fig. 7d. Unlike the second preferred embodiment of the seventh embodiment, the heat-conducting body 720 is included as a heat sink by the local channel structures 730 and 731 are supplied with coolant via flow flow paths, which are fluidically connected in parallel to the channel structure 735 of the heat receiving body 790.

Similar to FIG. 7b, the use of a connection body 780 secured on the side of the heat conduction body 720 facing the laser diode element with a cavity 732 achieves a serial connection of the second channel structure 731 to the first channel structure 730.

In a fourth preferred embodiment of the seventh embodiment, the heat of the diode laser component 714 via a 90 ° to the contact surface of the laser diode element inclined rear attachment surface 723 whose normal is oriented against the light emission direction, conductively attached to a via a solder joint on the heat conducting body 720 heat receiving body 790th transferred, which is cooled by a Peltier module 797, the hot side is connected to the heat dissipation body 798 according to the invention. Such a heat transfer device 715 is suitable, as shown in FIG. 7f, for cooling a plurality of diode laser components 714, which are stacked in the direction perpendicular to the contact surface 711 of the edge-emitting laser diode element 710. The serial electrical connection between two first and second diode laser components 714 and 714 'adjacent one another in such a diode laser stack 715 is realized by an electrical connection element 776 which makes electrical contact with the contact element 770 of the first diode laser components 714 and with the first current-carrying metal layer 724 2 'of the second diode laser component 714 and is arranged at least in sections between the first and second diode laser components 714 and 714'. This heat transfer device is particularly suitable for cooling laser diode elements which are operated in pulse or qcw mode.

The same method of connection to a rear end face of the heat conduction body comes in the eighth embodiment, illustrated with reference to a cross-sectional view in Fig. 8e, to advantage. The diode laser stack illustrated there contains diode laser components of a first variant, shown in the side view in FIG. 8b, which are equipped with a first variant of a heat conducting body 820, shown in the plan view of FIG. 8a.

The said heat-conducting body 820 consists of a cuboid main body 825 with an upper side, an upper side opposite the underside, a front-side end face and one of the Stim surface opposite rear end surface, both of which extend from the top to the bottom. A metallic current-carrying layer 824 extends from the top over the front to the bottom. In the upper-side section of the metallic current-carrying layer 824, a receiving surface 821 for the material-locking attachment of a laser diode bar 810 is provided. In the upper side of the main body 825, two microchannel structures 830 and 831 are inserted on both sides eccentrically to the left and right of the dash-dotted symmetry line. They are each separately connected to inlet openings 840 and outlet openings 850, which are located at the back end surface arranged opposite to the light emission direction, which also serves as attachment surface 823. The microchannel structures 830 and 831 that are open in the main body are covered by an insulating plate 860. While the laser diode barren 810 is fastened with its epitaxial-side contact surface to the metallic current-carrying layer 824, an electrical contact element 870 opposite the metallic current-carrying layer 824 is firmly bonded to the substrate-side contact surface 812 opposite the epitaxial-side contact surface 811, which has a strain-relieving end section facing away from the laser diode bar 810 is attached to the insulating plate. An advantage of the present arrangement of the microchannel structures 830 and 831 in the heat conduction body is that they are located far away from a central region 825 of the heat conduction body 820 that is available for unimpeded heat conduction to the connection surface 823.

The unhindered heat conduction from the laser diode bar 810 to the rear attachment surface 823 is perfected in the second variant of the heat conduction body 820, as shown in FIG. 8c. Here, the channel structures lie entirely outside the heat source projection of an extended heat source region opposite to the light emission direction up to the plane of the attachment surface 823. Specifically, within a projection that extends perpendicular to the face through the heat-conducting body, the heat-conducting body 820 has a width from the lateral extent of the heat-source area parallel to the contact area and perpendicular to the light-emitting direction and a height from the extension of the face in the direction perpendicular to the contact area. no recess on. As shown in FIG. 8 d in the side view of a second variant of the diode laser component, the channel structures in the relevant second variant of the heat conduction body are connected via inlet and outlet channels 841 and 851 to the inlet openings 840 and 850, wherein the inlet and outlet channels 841 and 851 introduced as Nuten in the receiving surface 821 opposite side of the base body and closed by cover plates 839.

FIG. 8e shows how the diode laser components 814 of the first variant, with the formation of a diode laser stack 815 with its rear connection surface 823, are connected via an adhesive joint to a heat absorber. mekörper 890 are connected, which is cooled by a Peltier module 797, the hot side is connected to the heat dissipation body 798 according to the invention. The series electrical connection is effected by directly contacting the substrate-side electrical contact element 870 of a first diode laser component 814 with the current-carrying metal layer 824 'of the first diode laser component 814 adjacent second diode laser component 814'. For contacting also includes the formation of an electrically conductive cohesive connection, for example by means of an electrically conductive adhesive.

The heat-absorbing body 890 simultaneously serves as a connection body for the coolant supply and removal to the individual heat-conducting bodies of the diode laser stack. For this purpose, it has an inlet 847, which can be supplied with coolant via a first coolant connection element 848 from a coolant source, and a drain 857, which can deliver the coolant via a second coolant connection element 858 to a coolant depression. At the level of each diode laser component 814, two inlet channels branch off from the inlet 847 to the two inlets 840 of each heat-conducting body 820 and two outflow channels to the two outlets 850 of each heat-conducting body 820 from the outlet 857.

Similar to the diode laser stack 715 of the seventh embodiment, the diode laser stack 815 of the eighth embodiment is advantageously suitable for cooling laser diode elements 810, which are operated in the pulse or qcw mode. Thus, the heat-conducting body 820 is suitable for conductive heat transfer to a heat-dissipated body 898 cooled with ambient air at a low duty cycle and at a high duty cycle for convective heat transfer to water flowing through its channel structures 830 and 831.

In a variant of the eighth exemplary embodiment, the heat removal body 898 is fixed instead of the heat receiving body 890 via an adhesive joint to the rear attachment surfaces 823 of the heat conducting body 820 and has a channel structure for the convective transfer of heat to a liquid coolant, which optionally parallel or serially through the channel structures 830 and 831 of the heat conducting body 820 can flow. LIST OF REFERENCE NUMBERS

Note: The following list of reference numerals is applicable by prefixing the figure number or the number of the embodiment to the figures and the description text. 10 semiconductor device

11 heat conducting body facing contact surface

12 heat conducting body remote contact surface

13 direction of emission arrow

14 diode laser component 15 heat transfer device

20 heat-conducting body

21 recording area

22 heat source projection

23 attachment surface 24 first metal layer

25 basic body

26 second metal layer

27 breakthrough

28 Breakthrough 29 Breakthrough

30 first channel structure

31 second channel structure

32 cavity

35 heat transfer structure / channel structure 36 inlet

37 process

38 coolant connection element

39 cover plate

40 inlet / inlet opening 41 first inlet

42 second inlet

45 inlet seal

46 deepening

47 Flow / inlet in connection body 48 first coolant connection element

50 outlet / drain opening

51 first run

52 second sequence

55 outlet sealing ring

56 deepening

57 Return / drain in connection body

58 second coolant connection element

60 insulating plate

61 first insulation panel breakthrough

62 second insulation breakthrough

65 laminates

66 insulation layer

67 first metal layer

68 second metal layer

70 contact element

71 first contact element breakdown

72 second contact element breakthrough

74 electrical connection element

75 metal layer

76 electrical connection element

80 connection body

81 first connection element

82 basic body

83 metallic layer

90 heat-absorbing body

91 second connection element

93 metallic layer

94 metallic layer

95 metallic layer

96 breakthrough

97 Peltier module

98 heat dissipation body

99 heat-conducting foil

Claims

claims:

1. Heat transfer device (15) with at least one semiconductor component (10) and at least one heat conduction body (20), wherein the semiconductor device (10) at least one during operation of the semiconductor device heat generating pn junction and one, all in the operation of the semiconductor device (10) heat and at least one contact surface (11, 12) and the heat conduction body (20) both at least one receiving surface (21) in at least a material connection with the contact surface (11, 12) of the Semiconductor component (10) is, as well as at least one channel structure (30, 31), which is provided for a convective heat transfer to at least a first, through the channel structure (30, 31) conductive, coolant, characterized in that the channel structure (30 , 31) of the heat conducting body (20) completely outside a perpendicular to the Contact surface (11, 12) extending heat source projection (22) of the heat source region is arranged, and the Wärmeleitkörper (20) at least one attachment surface (23) via which at least one conductive heat transfer to at least one heat removal body (98) is provided, at least a heat transfer structure (35), wherein at least one convective heat transfer optionally takes place at least to the first coolant or at least a second coolant flowing through the heat transfer structure (35).

2. Heat transfer device (15) according to any one of the preceding claims, characterized in that the heat transfer device (15) has two or more semiconductor devices (10), each having at least one during operation of the semiconductor device (10) heat generating pn junction and the heat source region extends over at least two semiconductor devices (10).

3. Heat transfer device (15) according to one of the preceding claims, characterized in that the conductive heat transfer from the connection surface (23) to the heat removal body (98) via at least one heat receiving body (90), the at least one contact surface for the conductive heat transfer has the heat removal body (98), wherein the connection area of the heat absorption body (90) is greater than the connection surface of the heat conduction body (20), the heat absorption body (90) is in at least one cohesive connection with the connection surface (23).

4. Heat transfer device (15) according to one of the preceding claims, characterized in that the heat transfer structure (35) of the heat removal body (98) has at least one channel structure with a plurality of channels and / or at least partially present in a rib and / or column structure.

5. The heat transfer device (15) according to any one of the preceding claims, characterized in that the first coolant flows through both the channel structure (30, 31) and through the heat transfer structure (35).

6. Heat transfer device (15) according to one of the preceding claims, characterized in that the convective heat transfer takes place both to the first coolant and to the second coolant.

7. Heat transfer device (15) according to one of the preceding claims, characterized in that the second coolant is gaseous.

8. Heat transfer device (15) according to any one of the preceding claims, characterized in that the cohesive connection of the receiving surface (21) with the contact surface (11, 12) has at least one transition body.

9. The heat transfer device (15) according to any one of the preceding claims, characterized in that the channel structure (30, 31) has two or more channels, which are arranged in the heat conducting body and via a common inlet (41, 42) and / or a common sequence ( 51, 52) communicate with at least one inlet opening (40) and / or at least one outlet opening (50).

10. Heat transfer device (15) according to one of the preceding claims, characterized in that the connection surface (23) of the receiving surface (21) and the heat transfer structure (35) of the heat removal body (98) at least partially in the heat source projection (22) are arranged.

11. The heat transfer device (15) according to any one of claims 1 to 9, characterized in that the connection surface (23) on a relative to the contact surface (11, 12) is arranged at least approximately 90 ° inclined end surface. the heat source projection (22) extends to the end surface.

12. The heat transfer device (15) according to claim 11, characterized in that the heat source projection (22) extends to the end face.

13. Heat transfer device (15) according to one of the preceding claims characterized in that the semiconductor component (10) an edge-emitting electro-optical device having a first contact surface (11) and at least one, the first contact surface (11) at least partially opposite, second Contact surface (12) and with at least one light exit surface, which is arranged between the two contact surface planes, with respect to the contact surfaces (11, 12) inclined by an angle of at least approximately 90 ° and a light emission direction (13) defined perpendicular to the light exit surface in is oriented away from the semiconductor device (10) direction.

14. Heat transfer device (15) according to any one of the preceding claims, characterized in that the channel structure (30,31) consists of a plurality of at least partially elongated channels whose longitudinal axes are arranged perpendicular to the contact surface (11, 12) and extending from one to Contact surface parallel upper side of the Wärmeleitkörpers (20) to a top side opposite underside of the Wärmeleitkörpers (20) extend.

15. Heat transfer device (15) according to one of claims 1 to 52, characterized in that the channel structure (30, 31) in the heat conducting body (20) is formed by a plurality of mutually parallel, inclined or intersecting grooves in the surface region of the semiconductor device (10) facing side of the Wärmeleitkörpers (20) are introduced, which is aligned substantially parallel to the contact surface (11, 12), wherein the grooves are closed by a cover element (60, 80) at least partially and a first portion of the grooves with a first aperture (61, 47) in the cover member is in communication and a second portion of the grooves with a second opening (62, 57) in the cover member (60, 80) is in communication.

16. Method, in particular test method, for setting up and operating a heat transfer device (15) according to one of the preceding claims, comprising the following steps: a) materially connecting the at least one semiconductor component (10) to the heat conducting body (20) b) flowing through the channel structure (30 , 31) of the Wärmeableitkörperwärmeleitkörpers (20) with a liquid, first coolant and test-wise operating the at least one semiconductor device (10), in particular for performing functional tests of the at least one semiconductor element (10), associated with the detection of at least one parameter. c) connecting the heat removal body (98) to the heat conducting body (20) d) operating the semiconductor component (10) optionally while flowing through the channel structure (30, 31) of the heat conducting body (20) with the liquid, first coolant or under flow of the heat transfer structure (35 ) of the heat removal body (98) with the liquid, first coolant or a second coolant

17. A method, in particular test method, for setting up and operating a heat transfer device (15) according to one of claims 1 to 15, comprising the following steps: a) materially connecting the at least one semiconductor component (10) to the heat conducting body (20) b) establishing a detachable Connection between the heat conducting body (20) and a heat removal device; c) flowing the heat removal device with a first coolant and test-wise operating the at least one semiconductor device (10), in particular for performing functional tests of the at least one semiconductor device (10), associated with the detection of at least one parameter. d) releasing the connection between the heat conducting body and the heat removal device e) establishing a material connection between the heat conducting body (20) and the heat removal body (98) f) operating the semiconductor component (10) optionally while flowing through the channel structure (30, 31) of the heat conducting body (10) 20) or under flow of the heat transfer structure (35) of the heat removal body (98) with the first or a second coolant.

18. Method, in particular test method, for setting up and operating a heat transfer device (15) according to one of claims 1 to 15, with the following steps: a) materially connecting the at least one semiconductor component (10) to the heat-conducting body (20) b) establishing a connection between the heat-conducting body (20) and the heat-removal body (98); c) flowing through the channel structure of the Wärmeleitkörpers (20) with a liquid, first

Coolant, flowing the heat transfer structure (35) of the heat removal body (98) with the liquid first coolant or a second coolant and testweise operating the at least one semiconductor device (10), in particular for performing functional tests of the at least one semiconductor device (10), connected to the detection at least one parameter. d) operating the semiconductor component (10) either while flowing through the channel structure (30, 31) of the heat conducting body with the liquid, first coolant or under flow of the heat transfer structure (35) of the heat removal body (98) with the liquid, first coolant or a second coolant.

19. A method for establishing and operating a heat transfer device (15) according to any one of claims 1 to 15, characterized in that at least two of the methods according to claims 16 to 18 are applied.

20. The method according to any one of claims 16 to 19, characterized in that the Halbleiterbau- element (10) is an electro-optical component and is detected in at least one test operation of at least one of the following parameters of the electro-optical component: a) electrical operating current , b) electrical operating voltage, c) emitted radiation power and d) spectrum of the emitted radiation.