CN211017113U - Structure for enhancing L ED luminous efficiency by using double-layer surface plasmon - Google Patents
Structure for enhancing L ED luminous efficiency by using double-layer surface plasmon Download PDFInfo
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- CN211017113U CN211017113U CN201922398505.9U CN201922398505U CN211017113U CN 211017113 U CN211017113 U CN 211017113U CN 201922398505 U CN201922398505 U CN 201922398505U CN 211017113 U CN211017113 U CN 211017113U
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Abstract
The utility model relates to an utilize structure of double-deck surface plasmon enhancement L ED luminous efficacy, including the stratum basale, the stratum basale top is provided with the buffer layer, the top of buffer layer is provided with first gallium nitride layer, the top on first gallium nitride layer is provided with first electrode, second gallium nitride layer, and first electrode and second gallium nitride layer are spaced each other, the upper surface on second gallium nitride layer is provided with first metal particle layer of receiving a little, and the top on second gallium nitride layer is provided with multiple quantum well layer, the top on multiple quantum well layer is provided with third gallium nitride layer, the lower surface on third gallium nitride layer is provided with the second and receives metal particle layer a little, the top on third gallium nitride layer is provided with the second electrode, this structure of utilizing double-deck surface plasmon enhancement L ED luminous efficacy, the scope of the near field that the reinforcing surface plasmon that can be very big, through local electric field just can strengthen multiple quantum well layer's luminous efficacy.
Description
Technical Field
The utility model belongs to the technical field of L ED light source, concretely relates to utilize double-deck surface plasmon reinforcing L ED luminous efficacy's structure.
Background
L ED light source (L ED refers to L light Emitting Diode) is a light Emitting Diode light source, the light Emitting principle of L ED is different from that of incandescent lamp and gas discharge lamp, the energy conversion efficiency of L ED light source is very high, theoretically, 10% energy consumption of incandescent lamp can be achieved, compared with L ED, 50% energy saving effect can be achieved, L ED with 75lm/W light efficiency is reduced by about 80% compared with incandescent lamp with the same brightness, the energy saving effect is obvious, which has very important significance to China with very intense energy source.
On one hand, the surface plasmon can enhance the local electric field, which can enhance the recombination efficiency of electron-hole pairs, thereby enhancing the efficiency of emitted light, but because the range of the near field generated by the surface plasmon is very limited, in order to better affect the quantum well through the near field to reflect light, the edge thickness of the quantum well is generally 15nm, and the thickness of the quantum well is generally 3 nm.
On the other hand, in the traditional surface plasmon enhanced quantum well composite luminous efficiency, metal particles are in p-GaN or n-GaN, and in short, only one side of a quantum well is provided with the metal particles, so that the distance between the metal particles and the quantum well is difficult to control, the effect of a near field generated by a micro-nano metal structure on the quantum well is difficult to control, and the surface electric field enhancement generated by a planar structure is generally planar, namely is basically distributed on the surface of the quantum well, while the quantum well is thick in the z direction and is generally a multi-layer composite quantum well, so that if the local enhancement field generated by the metal particles can act on the space where the whole quantum well is located, the luminous efficiency of L ED can be greatly enhanced.
Disclosure of Invention
In view of the above, it is an object of the present invention to provide a structure for enhancing L ED light emitting efficiency using a double layer surface plasmon.
Therefore, the utility model provides an utilize double-deck surface plasmon reinforcing L ED luminous efficacy's structure, including the stratum basale, the stratum basale top is provided with the buffer layer, the top of buffer layer is provided with first gallium nitride layer, the top on first gallium nitride layer is provided with first electrode, second gallium nitride layer, and first electrode and second gallium nitride layer are spaced each other, the upper surface on second gallium nitride layer is provided with the first metal particle layer that receives a little, and the top on second gallium nitride layer is provided with multiple quantum well layer, multiple quantum well layer's top is provided with third gallium nitride layer, the lower surface on third gallium nitride layer is provided with the second and receives metal particle layer a little, the top on third gallium nitride layer is provided with the second electrode.
The thickness of the multiple quantum well layer is 40 nm-50 nm.
The buffer layer is made of gallium nitride or aluminum nitride through low-temperature growth.
The multiple quantum well layer is formed of InxGa1-xN or GaN, or InxGa1-xAnd the N layer and the GaN layer are alternately formed into a multilayer structure.
The first gallium nitride layer is made of undoped gallium nitride.
The second gallium nitride layer is made of N-type doped gallium nitride.
The third gallium nitride layer is made of P-type doped gallium nitride.
The second electrode is made of a metal oxide transparent conductive film.
The base layer is made of silicon.
The beneficial effects of the utility model are that the utility model provides an utilize double-deck surface plasmon reinforcing L ED luminous efficacy's structure, the scope of the produced near field of reinforcing surface plasmon that can be very big, just can strengthen the luminous efficacy of multiple quantum well layer through local electric field, on the other hand, through setting up the metal particle a little with the below at multiple quantum well layer, utilize two-layer metal particle a little, make it can form resonance electric field between the metal particle a little at the two-layer under the effect of exciting light, make to have the electric field of reinforcing between the metal particle a little, be favorable to forming stable electric field at multiple quantum well layer, so that improve luminous efficacy.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of a structure for enhancing L ED light emission efficiency using a bilayer surface plasmon.
In the figure: 1. a base layer; 2. a buffer layer; 3. a first gallium nitride layer; 4. a first electrode; 5. a second gallium nitride layer; 6. a multiple quantum well layer; 7. a third gallium nitride layer; 8. a first micro-nano metal particle layer; 9. a second micro-nano metal particle layer; 10. a second electrode.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The structure comprises a substrate layer 1, a buffer layer 2 is arranged above the substrate layer 1, the buffer layer 2 is used for reducing lattice mismatch between a semiconductor material and the substrate, a first micro-nano metal particle layer 3 is arranged above the buffer layer 2, a first electrode 4 and a second gallium nitride layer 5 are arranged above the first gallium nitride layer 3, the first electrode 4 and the second gallium nitride layer 5 are spaced from each other, a first micro-nano metal particle layer 8 is arranged on the upper surface of the second gallium nitride layer 5, a multiple quantum well layer 6 is arranged above the second gallium nitride layer 5, a third gallium nitride layer 7 is arranged above the multiple quantum well layer 6, a second micro-nano metal particle layer 9 is arranged on the lower surface of the third gallium nitride layer 7, a second electrode 10 is arranged above the third gallium nitride layer 7, a second micro-nano metal particle layer 9 is arranged above the multiple quantum well layer 6, a first metal particle layer 8 is arranged below the multiple quantum well layer 6, a first micro-nano metal particle layer 8 is arranged below the multiple particle layer 6, a second micro-nano metal particle layer 6 is arranged below the multiple micro-nano metal particle layer, the multiple particle layer 6, the multiple micro-nano metal particle layer 6 is arranged between the first micro-nano metal particle layer, the multiple particle layer 6, the multiple micro-nano metal particle layer, the multiple particle layer 6 micro-nano metal particle layer can not only, the multiple particle layer can be formed by the first micro-nano metal particle layer 6 micro-nano-field enhanced, the multiple-nano-field enhanced-nano-field enhanced-nano-field enhanced-field enhanced-nano-enhanced-field enhanced-multiple-enhanced-multiple-enhanced-multiple-nano-multiple-field enhanced-field enhanced-multiple-quantum-multiple-quantum-multiple-enhanced-multiple-field enhanced-multiple-quantum-field enhanced-quantum.
It should be noted that the wavelength of the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 when they resonate correspondingly should match the light intensity emitted by the material; in addition, the densities (the period on the xy plane) of the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 are not easy to be too large, and the light transmission is blocked.
Furthermore, the metal particles of the first micro-nano metal particle layer 8 and the metal particles of the second micro-nano metal particle layer 9 are set to have one-to-one correspondence, and the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 are set to be cubic or have an anisotropic structure, so that different responses can be formed to light incident in different directions.
Further, the multiple quantum well layer 6 generally has an even number of quantum well layers, and generally has 2 to 6 layers, so that it is ensured that coupling resonance can be formed between the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9.
Further, the multiple quantum well layer 6 is preferably 40nm to 50nm in thickness, the multiple quantum well layer 6 has a thickness of any one of 41nm, 42nm, 43nm, 44nm, and 45nm, thus, coupling resonance can be formed between the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9, namely, the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 are utilized to form a resonance electric field between the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 under the action of exciting light, therefore, in the vertical direction, an enhanced electric field exists between the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9, so that the distance between the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 is maintained, and the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 are prevented from being too far away from the multiple quantum well layer 6.
Further, the buffer layer 2 is made of gallium nitride or aluminum nitride grown at a low temperature.
Further, the multiple quantum well layer 6 is composed of InxGa1-xN or GaN, or InxGa1-xAnd the N layer and the GaN layer are alternately formed into a multilayer structure.
Further, the first gallium nitride layer 3 is made of undoped gallium nitride, and has an effect of further reducing lattice mismatch and dislocation with the semiconductor material.
Further, the second gallium nitride layer 5 is made of N-type doped gallium nitride, and may provide holes.
Further, the third gallium nitride layer 7 is made of P-type doped gallium nitride, and can provide electrons.
Further, the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 may be metal spheres with a diameter of 5nm to 10 nm; it is noted that the undoped first gallium nitride layer 3 is grown at a temperature of generally 1020 ℃ but the melting temperature of silver is 961.8 ℃; therefore, gold is preferably used as the material for the first micro-nano metal particle layer 8 of the lower layer, and the melting point of gold is 1064 ℃. The growth temperature of the P-type doped third gallium nitride layer 7 is 970 ℃, the growth temperature of the quantum well is 770 ℃, and therefore, the second micro-nano metal particle layer 9 can be made of gold or silver. After the first micro-nano metal particle layer 8 and the second micro-nano metal particle layer 9 are grown, annealing treatment is needed, so that the first micro-nano metal particle layer 8 and the second gallium nitride layer 5 can be in closer contact, the second micro-nano metal particle layer 9 and the third gallium nitride layer 7 can be in closer contact, ohmic loss between the first micro-nano metal particle layer 8 and the second gallium nitride layer 5 is reduced, and ohmic loss between the second micro-nano metal particle layer 9 and the third gallium nitride layer 7 is reduced.
Further, the second electrode 10 should have both light-transmitting property and good conductive property, and therefore, the second electrode 10 may be made of a metal oxide transparent conductive film; the metal oxide light-transmitting conductive film can be any one of ITO, FTO and ZAO systems. Of course, the second electrode 10 may be made of other materials with good light transmittance and electrical conductivity, such as graphene.
Furthermore, the substrate layer 1 is made of silicon, silver particles can be evaporated on the substrate layer 1, the buffer layer 2 is arranged on the substrate layer 1, the buffer layer 2 grows at low temperature, the silver particles cannot be melted, on one hand, the buffer layer grows at high quality, on the other hand, downward emitted light can be effectively reflected, the downward emitted light is also reflected to the space, and the external quantum effect of the L ED device is increased.
In conclusion, the L ED light-emitting efficiency structure enhanced by the double-layer surface plasmons can greatly enhance the range of a near field generated by the surface plasmons and enhance the light-emitting efficiency of a multiple quantum well layer through a local electric field, and on the other hand, the micro-nano metal particles are arranged above and below the multiple quantum well layer and can form a resonance electric field between the two layers of micro-nano metal particles under the action of exciting light by virtue of the two layers of micro-nano metal particles, so that an enhanced electric field exists between the two layers of micro-nano metal particles, and a stable electric field is favorably formed in the multiple quantum well layer, so that the light-emitting efficiency is improved.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (9)
1. The utility model provides an utilize structure of double-deck surface plasmon enhancement L ED luminous efficacy which characterized in that includes stratum basale (1), stratum basale (1) top is provided with buffer layer (2), the top of buffer layer (2) is provided with first gallium nitride layer (3), the top of first gallium nitride layer (3) is provided with first electrode (4), second gallium nitride layer (5), and first electrode (4) and second gallium nitride layer (5) are spaced each other, the upper surface of second gallium nitride layer (5) is provided with first micro-nano metal particulate layer (8), and the top of second gallium nitride layer (5) is provided with multiple quantum well layer (6), the top of multiple quantum well layer (6) is provided with third gallium nitride layer (7), the lower surface of third gallium nitride layer (7) is provided with second micro-nano metal particulate layer (9), the top of third gallium nitride layer (7) is provided with second electrode (10).
2. The structure for enhancing L ED luminous efficiency using bi-layer surface plasmons according to claim 1, wherein the multiple quantum well layers (6) have a thickness of 40nm to 50 nm.
3. The structure for enhancing L ED luminous efficiency by using double-layer surface plasmon as claimed in claim 1, wherein said buffer layer (2) is made of GaN or AlN low-temperature growth.
4. The structure for enhancing L ED luminous efficiency using double-layer surface plasmon according to claim 1, wherein said multiple quantum well layers (6) are formed of InxGa1-xN or GaN, or InxGa1-xAnd the N layer and the GaN layer are alternately formed into a multilayer structure.
5. A structure for enhancing L ED luminous efficiency using double-layer surface plasmons as claimed in claim 1, wherein the first gallium nitride layer (3) is made of undoped gallium nitride.
6. A structure for enhancing L ED luminous efficiency using double-layer surface plasmons as claimed in claim 1, wherein the second gallium nitride layer (5) is made of N-type doped gallium nitride.
7. A structure for enhancing L ED luminous efficiency using double-layer surface plasmons as claimed in claim 1, wherein the third gallium nitride layer (7) is made of P-type doped gallium nitride.
8. The structure for enhancing L ED luminous efficiency by using double-layer surface plasmon according to claim 7, wherein said second electrode (10) is made of metal oxide transparent conductive film.
9. The structure for enhancing L ED luminous efficiency by using double-layer surface plasmon according to claim 7, characterized in that the substrate layer (1) is made of silicon.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112186081A (en) * | 2020-09-28 | 2021-01-05 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112186081A (en) * | 2020-09-28 | 2021-01-05 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN112186081B (en) * | 2020-09-28 | 2021-08-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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