CN217214649U - Structure of chamber - Google Patents

Abstract

The utility model relates to a structure of cavity, it contains a lid, a restriction piece and a pedestal, this lid contains a sealed pad module, an airtight ring module and an electrode module, this restriction piece sets up in the below of this lid, and its ring establishes the outside of this lid, this pedestal sets up in the below of this restriction piece, wherein, this lid, this restriction piece and this pedestal form an accommodation space according to the preface from bottom to top, and then, utilize this sealed pad module and this airtight ring module to set up in the structure of the inside of lid, leak from outside this lid in order to prevent the gas of this accommodation space.

Description

Structure of chamber

Technical Field

The present invention relates to a structure, and more particularly to a structure of a chamber.

Background

Wafers, which are simply called round pieces of semiconductor crystals in the modern semiconductor industry, are obtained by slicing cylindrical semiconductor crystals, and are often used as carriers for integrated circuit processes or for the manufacture of solar cells.

Wafers, which are currently the most commonly used semiconductor materials, can be classified into different specifications of 3, 4, 5, 6, 8 inches according to their diameters, and more recently, wafers of 12 inches or larger have been developed, and the larger the wafer, the more integrated circuits can be produced.

In the conventional wafer manufacturing process, different types of thin films may be deposited on the wafer surface by the following methods:

(1) chemical vapor deposition method: silicon, or silicon dioxide or silicon nitride films can be produced;

(2) a thermal oxidation method: silicon, or silicon dioxide or silicon nitride films can be produced;

(3) sputtering method: other types of metal films are produced.

Depending on the deposited thin film material, the thin film material may be further classified into a silicon wafer, a nitride wafer, a silicon carbide wafer, or the like.

After the film is deposited on the semiconductor wafer, the subsequent semiconductor process can be performed, after the wafer (e.g. silicon wafer) on which the film is deposited is uniformly coated with photoresist (resist), the conventional photolithography (lithography) process is used to transfer the electronic path of the tiny pattern in the circuit onto the photoresist, or the pattern can be drawn on the mask and then optically shrunk, projected and transferred onto the photosensitive coating (photoresist).

The photoresist pattern is transferred to the crystalline surface of the semiconductor material by etching, and the material is etched and deposited on the substrate in the vacuum chamber by providing etching or deposition gas into the vacuum chamber and applying a Radio Frequency (RF) field into the vacuum chamber to excite the gas into a plasma state.

However, the method for etching the photoresist pattern by etching can be divided into:

(1) wet etching: chemical reaction is carried out with the substance by using chemical liquid. Belongs to isotropic etching.

(2) Dry etching: through the dissociation of plasma, ions are formed to proceed chemical reaction or physical bombardment with the surface of the material, which belongs to anisotropic etching.

The vacuum chamber, in which the gas is generated in a plasma state by the radio frequency field, needs to be completely vacuum, so that the cover forming the vacuum chamber needs to prevent the gas used for etching from leaking and has the function of guiding the gas flow.

Furthermore, since the gas used in etching may be an acid gas or an alkaline gas, the cover body needs to be resistant to acid and alkali and to be protected, so as to avoid the problem that the cover body itself is not sufficient in vacuum degree due to acid and alkali etching, which results in poor etching effect.

Moreover, the lid of the vacuum chamber itself needs to have the effects of insulation and plasma protection, so as to avoid the plasma leakage from damaging the etching machine.

Therefore, how to manufacture a chamber structure that can prevent air leakage, guide airflow, have acid and alkali resistance, insulate the chamber, and protect the plasma is a problem to be solved by those skilled in the art.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a structure of cavity, it utilizes sealed pad and gas seal ring to set up in the inside of lid, makes the cavity inside reach leak protection gas and lead the positive air current, anti acid-base and have the efficiency of insulation and electric thick liquid protection.

To the above object, the present invention provides a structure of a chamber, which comprises: a lid, its downside is equipped with a first annular groove and a second annular groove, and this first annular groove sets up in this second annular groove outside, and this lid contains: the sealing gasket module comprises a first gasket body and a second gasket body, the first gasket body is arranged in the first annular groove, the second gasket body is arranged in the second annular groove, and the first gasket body and the second gasket body are respectively positioned at the bottoms of the first annular groove and the second annular groove; the airtight ring module comprises a first airtight ring and a second airtight ring, the first airtight ring is arranged below the first cushion body, and the second airtight ring is arranged below the second cushion body; the electrode module is covered below the airtight ring module; a limiting piece which is arranged below the cover body and is annularly arranged on the outer side of the cover body; and a base body arranged below the limiting piece; wherein, the cover body, the limiting piece and the base body form an accommodating space.

The utility model provides an embodiment, wherein this electrode module contains a first electrode and a second electrode.

The utility model provides an embodiment, wherein this first electrode sets up in the below of this first airtight ring.

The utility model provides an embodiment, wherein this second electrode sets up in the below of this second airtight ring, and this second electrode is established to this first electrode ring.

The present invention provides an embodiment, wherein the base has a recess, and an electrostatic adsorbing Element (ESC) is embedded in the recess.

The utility model provides an embodiment, still contain a wafer, this wafer sets up in this electrostatic absorption component's top.

The utility model provides an embodiment, wherein this pedestal electric connection radio frequency power component.

The present invention provides an embodiment, wherein the rf power device and the electrode module react to generate plasma in the accommodating space.

Drawings

FIG. 1A: which is a schematic view of an exploded structure of a chamber according to an embodiment of the present invention;

FIG. 1B: which is a schematic structural diagram of an embodiment of the present invention; and

FIG. 1C: which is an enlarged schematic view of an embodiment of the present invention.

[ brief description of the drawings ]

10 cover body

11 first annular groove

12 sealing gasket module

121 first pad

123 second pad

13 second annular groove

14 gas-tight ring module

141 first airtight ring

143 second airtight ring

16 electrode module

161 first electrode

163 second electrode

20 limiting piece

30 seat body

32 grooves

34 electrostatic adsorption element

40 space for accommodating

50 radio frequency power element

60 wafer

70 plasma

Detailed Description

In order to further understand and appreciate the structural features and functions of the present invention, preferred embodiments and associated detailed descriptions are provided below:

the cover body of the vacuum chamber body also needs to have the effects of insulation and plasma protection, so as to avoid the conditions that the etching machine is damaged due to the leakage of plasma, and the like.

The utility model discloses improve the structure of a cavity, utilize sealed pad and airtight ring, make the cavity inside reach leak protection gas and lead positive air current, anti acid-base and have the efficiency of insulation and electric thick liquid protection.

Hereinafter, the present invention will be described in detail by illustrating various embodiments of the present invention with reference to the drawings. The concepts of the present invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.

First, please refer to fig. 1A, which is an exploded schematic view of a chamber according to an embodiment of the present invention, and fig. 1B, which is a schematic view of a chamber according to an embodiment of the present invention, as shown in the drawings, the structure of the chamber of the present invention includes a cover 10, a limiting member 20, and a seat 30.

In the present embodiment, a first annular groove 11 and a second annular groove 13 are disposed on the lower side of the cover 10, and the first annular groove 11 is disposed outside the second annular groove 13.

In the embodiment, the cover 10 includes a sealing pad module 12 including a first pad 121 and a second pad 123, the first pad 121 is disposed in the first annular groove 11, the second pad 123 is disposed in the second annular groove 13, and the first pad 121 and the second pad 123 are respectively located at the bottoms of the first annular groove 11 and the second annular groove 13.

In this embodiment, please refer to fig. 1C, which is an enlarged schematic view of an embodiment of the present invention, as shown in the figure, the cover 10 includes a gas-tight ring module 14 including a first gas-tight ring 141 and a second gas-tight ring 143, the first gas-tight ring 141 is disposed below the first pad 121, the second gas-tight ring 143 is disposed below the second pad 123,

in the present embodiment, the cover 10 includes an electrode module 16 disposed below the airtight ring module 14, the electrode module 16 includes a first electrode 161 and a second electrode 163, the first electrode 161 is disposed below the first airtight ring 141, the second electrode 163 is disposed below the second airtight ring 143, and the first electrode 161 surrounds the second electrode 163.

In the embodiment, the limiting member 20 is disposed below the cover 10 and surrounds the outer side of the cover 10.

In the present embodiment, the base 30 is disposed below the limiting member 20, wherein the base 30 has a groove 32, an electrostatic chuck (ESC) 34 is embedded in the groove 32, and a wafer 60 is disposed above the ESC 34.

In this embodiment, the cover 10, the limiting member 20 and the base 30 sequentially form a receiving space 40 from top to bottom, the base 30 is electrically connected to a rf power device 50, wherein the rf power device 50 reacts with the electrode module 16 to generate a plasma 70 in the receiving space 40, so that the plasma 70 performs an etching process on the wafer 60 in the receiving space 40.

The plasma 70 (also called plasma) is a fourth material state except for solid, liquid and gas, and its characteristics are completely different from the first three. The gas is converted into plasma at high temperature or under strong electromagnetic field.

A plasma is an ionized gas with equal amounts of positive and negative charges, which is composed of ions, electrons, and neutral atoms or molecules. The plasma is called the fourth state of matter by scientists who estimate that nearly ninety-nine percent of the matter in the universe exists as a plasma.

The plasma 70 is generated by exciting electrons in the gas with energy applied and accelerating the electrons to impact neutral atoms, and since neutral atoms are impacted by accelerated electrons to generate ions and accelerated electrons with energy, these released electrons collide with other neutral atoms under the acceleration of the electric field, and thus repeat the process, so as to generate a gas breakdown effect (gas breakdown down) to form a plasma state.

With the development of technology, the plasma 70 is also widely used in semiconductor manufacturing, such as Sputtering (Sputtering) in thin film deposition (cvd), plasma chemical vapor deposition (PECVD), Dry etching (Dry etching) in etching process, ion Source (Source Haed) of ion implanter and plasma immersion ion implantation (plasma immersion implantation) in the aspect of implantation technology, which all use the plasma principle to realize the semiconductor manufacturing process.

As mentioned above, the dry etching process refers to conductor etching, dielectric etching or polysilicon etching to indicate the type of thin film removed from the wafer, for example, dielectric etching is used when the oxide layer is etched to leave an "oxide insulator" to separate the device, polysilicon etching is used to create the gate in the transistor, dielectric etching is used to etch the via and trench of the metal conductive path, and metal etching removes the aluminum, tungsten or copper layer and exposes the elevated circuit pattern layer by layer in the device structure.

The plasma 70 is used to etch the wafer 60 in the receiving space 40, i.e. the plasma etching process is performed by using the plasma 70, which applies electromagnetic energy (usually Radio Frequency (RF), i.e. the RF power device 50 in this embodiment) in a gas containing a chemical reaction component (such as fluorine or chlorine), the plasma 70 is formed in the receiving space 40, and releases positively charged ions to impact the wafer to remove the etching material, and reacts with the active radicals to form volatile or non-volatile residues. The ion charges are injected into the wafer surface in the vertical direction to remove the photoresist on the wafer 60 surface and form a circuit pattern.

In the etching process, a sealed and vacuum state is required for etching to form a better space for the plasma 70, and a conventional chamber requiring a sealed and vacuum state generally utilizes a conventional silica gel to seal the chamber, because the silica gel has a good compression rate (about 7% to 10%), the silica gel can fill the gap in the chamber to achieve the effect of sealing vacuum, but because the silica gel contains an organic solvent (which must be added in the manufacturing process), the organic solvent is separated out after the vacuum chamber is used for a period of time, and the chamber is polluted. In order to solve the problem of silicone, in the present embodiment, the airtight ring module 14 uses Polytetrafluoroethylene (ePTFE) or fluoropolymer, which has a better compressibility than that of silicone (about 10% to 40%), so that the use of ePTFE or fluoropolymer can better fill the gaps between the first annular groove 11 and the second annular groove 13 in the cover 10 without the problem of organic solvent leakage under the same thickness of the airtight ring module 14.

Above the embodiment, the utility model relates to a structure of cavity, it utilizes sealed pad and gas seal ring to set up in the inside of lid, makes the cavity inside reach leak protection gas and lead the positive air current, the effect of acid and alkali resistance and having insulation and electric thick liquid protection.

The foregoing is illustrative of the preferred embodiment of the present invention and is not to be construed as limiting the scope of the invention, but rather is intended to cover all equivalent variations and modifications in form, construction, features and spirit of the invention as expressed in the appended claims.

Claims (8)

1. A structure of a chamber, comprising:

a lid, its downside is equipped with a first annular groove and a second annular groove, and this first annular groove sets up in this second annular groove outside, and this lid contains:

the sealing gasket module comprises a first gasket body and a second gasket body, the first gasket body is arranged in the first annular groove, the second gasket body is arranged in the second annular groove, and the first gasket body and the second gasket body are respectively positioned at the bottoms of the first annular groove and the second annular groove;

the airtight ring module comprises a first airtight ring and a second airtight ring, the first airtight ring is arranged below the first cushion body, and the second airtight ring is arranged below the second cushion body; and

the electrode module is covered below the airtight ring module;

a limiting piece which is arranged below the cover body and is annularly arranged on the outer side of the cover body; and

a seat body arranged below the limiting piece;

wherein, the cover body, the limiting piece and the base body form an accommodating space.

2. The chamber structure of claim 1, wherein the electrode module comprises a first electrode and a second electrode.

3. The chamber structure of claim 2, wherein the first electrode is disposed below the first hermetic ring.

4. The chamber structure of claim 3, wherein the second electrode is disposed below the second hermetic ring, and the first electrode surrounds the second electrode, the first electrode being electrically connected to the second electrode.

5. The chamber structure of claim 1, wherein the base has a recess, and an electrostatic adsorbing element is embedded in the recess.

6. The chamber structure of claim 5, further comprising a wafer disposed above the electrostatic clamping device.

7. The chamber structure of claim 1, wherein the pedestal is electrically connected to an rf power device.

8. The chamber structure of claim 7, wherein the RF power device and the electrode module react to generate a plasma in the receiving space.

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