CN202996833U - Compound packaged IGBT device - Google Patents
Compound packaged IGBT device Download PDFInfo
- Publication number
- CN202996833U CN202996833U CN2012207262124U CN201220726212U CN202996833U CN 202996833 U CN202996833 U CN 202996833U CN 2012207262124 U CN2012207262124 U CN 2012207262124U CN 201220726212 U CN201220726212 U CN 201220726212U CN 202996833 U CN202996833 U CN 202996833U
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- igbt
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- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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Abstract
The utility model discloses a compound packaged IGBT device, which comprises an IGBT chip, a diode chip, a base plate and three pins. The base plate is connected with a second pin and is isolated from a first pin and a third pin. The IGBT chip and the diode chip are bonded on the base plate through solder. A collector electrode of the IGBT chip and a cathode of the diode chip are electrically connected with the base plate through the solder respectively, an emitting electrode of the IGBT chip and an anode of the diode chip are electrically connected with a wiring zone of the third pin through a conductive lead respectively, and a grid electrode of the IGBT chip is electrically connected with a wiring zone of the first pin through a conductive lead. According to the compound packaged IGBT device, the two chips mentioned above are packaged together in an antiparallel connection manner, so that an IGBT discrete device of higher integrated level and with a reverse conductive diode is formed. The compound packaged IGBT device effectively reduces lead inductance in the whole device, improve power density of products and has the advantages of exquisite and simple structure, space saving, high reliability and the like.
Description
Technical field
The utility model relates to the IGBT device of the technical field, particularly a kind of composite package of semiconductor manufacturing.
Background technology
IGBT is the abbreviation of Insulated Gate Bipolar Trans istor, means insulated gate bipolar transistor.IGBT is by the BJT(bipolar transistor) with the MOSFET(insulated-gate type field effect transistor) the compound full-control type voltage driven type electronic device that forms.The characteristics such as this device has that switching frequency is high, input impedance is large, Heat stability is good, drive circuit are simple, low saturation voltage and large electric current are used as power device and are widely used in the Industry Control such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drive, digital camera, electromagnetic heating apparatus, UPS, electric welding machine, wind power generation and power electronic system field.
IGBT operates mainly in complete machine under on off state, and great majority use under the inductive load condition.For make complete machine that we design can be safer, work more reliably, the protection of IGBT is seemed particularly important.At present, when using and designing IGBT, the general surplus of staying is all larger, but still can't resist the various Problem of Failure that the interference that comes from the outside and self complete machine cause: the stray inductance that internal cause such as device periphery distribute, machine induced electromotive force, load changing etc. cause overvoltage and overcurrent; External cause such as power network fluctuation, power induction, surge etc.It is mainly to be caused by the overvoltage/overcurrent of collector and emitter and the overvoltage/overcurrent of grid that IGBT lost efficacy.In addition, the existence of leakage inductance and lead-in inductance will cause IGBT collector electrode overvoltage, and produce latching effect at device inside, make the IGBT lockout failure.Simultaneously, higher overvoltage can make IGBT puncture.IGBT enters the amplification region for above-mentioned reasons, and the pipe switching loss is increased.
In concrete circuit uses, one of measure that prevents the IGBT inefficacy is exactly diode FRD(Fast RecoveryDiode of reverse parallel connection welding between the collector electrode C of IGBT and emitter E, fast recovery diode), effect provides the afterflow passage when working for IGBT exactly, prevents breakdown damage.Though this way can be protected IGBT to a certain extent; but because between the two connection wire is longer, distributed inductance, electric capacity are larger, the appearance of failure conditions or inevitable; and the existence of diode FRD can take the space of a PCB wiring board part, affects simultaneously efficiency of assembling.
The utility model content
Problem in view of above-mentioned prior art existence, the utility model is intended to propose a kind of IGBT device of composite package, igbt chip and diode chip for backlight unit are packaged together in antiparallel mode, form integrated level higher, with the IGBT discrete device of reverse conducting diode, reduce complete machine inner lead inductance, improve power density and the reliability of product.
In order to solve the problems of the technologies described above, the utility model has adopted following technical proposals:
A kind of IGBT device of composite package, it is characterized in that, comprise igbt chip and diode chip for backlight unit, base plate and three pins, described base plate is connected with the second pin, isolates with the first pin and the 3rd pin, and described igbt chip and diode chip for backlight unit bond on base plate by scolder; The collector electrode of described igbt chip (C) is realized electrical connection by scolder and base plate respectively with the negative electrode (K) of diode chip for backlight unit, the emitter of igbt chip (E) is electrically connected by routing district's realization of conductive lead wire and the 3rd pin respectively with the anode (A) of diode chip for backlight unit, and the grid of igbt chip (G) is by routing district's realization electrical connection of conductive lead wire and the first pin.Further, at the lower surface difference plating coating metal layer of described igbt chip and diode chip for backlight unit, the collector electrode of described igbt chip (C) is realized electrical connection by metal level, scolder and base plate respectively with the negative electrode (K) of diode chip for backlight unit.Described metal level is the silver metal layer, and its thickness is 1 μ m to 10 μ m.The thickness of described scolder is 20 μ m to 60 μ m.
The utlity model has following beneficial effect: adopt compound encapsulation structure, igbt chip and diode chip for backlight unit be packaged together in antiparallel mode, form integrated level higher, with the IGBT discrete device of reverse conducting diode.Reduce complete machine inner lead inductance, solve the Problem of Failure that parasitic parameter causes greatly; Simplify user's design, further improve power density and the reliability of product, reduce switching loss; Reduce machine volume, reduce and use and assembly cost.
Description of drawings
Fig. 1 is the equivalent schematic of igbt chip;
Fig. 2 is the equivalent schematic of diode chip for backlight unit;
Fig. 3 is equivalent schematic of the present utility model;
Fig. 4 is structural representation of the present utility model;
Fig. 5 is the floor map of chip of the present utility model, scolder and base plate;
Fig. 6 is the A-A schematic cross-section of Fig. 5.
Label declaration:
1, routing district 5.2, routing district 6G, the first pin 6C of the 3rd pin, the second pin 6E, the 3rd pin 7.1,7.2,7.3, conductive lead wire 8, encapsulating shell 9.1,9.2, the metal level of igbt chip 2, diode chip for backlight unit 3, base plate 4.1,4.2, scolder 5.1, the first pin
Embodiment
Fig. 1 is the equivalent schematic of igbt chip, comprises grid G, emitter E and collector electrode C.
Fig. 2 is the equivalent schematic of diode chip for backlight unit, comprises anode A and negative electrode K.
Fig. 3 is equivalent schematic of the present utility model, as shown in the figure, igbt chip and diode chip for backlight unit is in the same place with antiparallel mode composite package.Make when the IGBT conducting, the current potential of collector electrode C is than the height of emitter E, and electric current flows to emitter E from collector electrode C, and under this condition, antiparallel diode is in cut-off state because of voltage reversal; When diode current flow, the current potential of anode A is than the height of negative electrode K, and electric current flows to negative electrode K from anode A, and under this condition, IGBT is in cut-off state because of voltage reversal.
As extremely shown in Figure 6 in Fig. 4, comprise igbt chip 1 and diode chip for backlight unit 2, base plate 3, scolder 4.1 and 4.2, routing district 5.1 and 5.2, three pins comprise the first pin 6G, the second pin 6C, the 3rd pin 6E, and conductive lead wire 7.1,7.2,7.3 and encapsulating shell 8.Wherein base plate 3 is used for loading chip, and it is connected with the second pin 6C, isolates with the first pin and the 3rd pin.
The overlying electrode metal of igbt chip 1 is aluminium, mainly is divided into two zones, and little zone is grid G, and large zone is emitter E; Lower electrodes is argent, is collector electrode C, at the silver metal level 9.1 of the surperficial plating of collector electrode C.The overlying electrode metal of diode chip for backlight unit 2 is aluminium, is anode A, and lower electrodes is argent, is negative electrode K, and at the silver metal level 9.2 of the surperficial plating of negative electrode K, silver metal level 9.1,9.2 thickness are 5 μ m to 10 μ m.
The collector electrode C of igbt chip 1 and the negative electrode K of diode chip for backlight unit 2 respectively by corresponding silver metal level 9.1,9.2 and scolder 4.1,4.2 realize being electrically connected with base plate 3, by routing district's 5.2 realization electrical connections of conductive lead wire 7.2 and the 7.3 and the 3rd pin 6E, the grid G of igbt chip 1 is by routing district's 5.1 realization electrical connections of conductive lead wire 7.1 and the first pin 6G respectively for the anode A of the emitter E of igbt chip 1 and diode chip for backlight unit 2.The emitter E of the igbt chip 1 of Fig. 4 has 3 conductive lead wires 7.2 to be electrically connected to routing district 5.2, and grid G has 1 conductive lead wire 7.1 to be electrically connected to routing district 5.1, and the anode A of diode chip for backlight unit 2 has 1 conductive lead wire 7.3 to be electrically connected to routing district 5.2.
As shown in Figure 5, Distances Between Neighboring Edge Points L1 〉=0.5mm between the scolder 4.1 of igbt chip and the scolder 4.2 of diode chip for backlight unit, the scolder of the scolder 4.1 of igbt chip and the Distances Between Neighboring Edge Points L2 between described base plate, diode chip for backlight unit and the Distances Between Neighboring Edge Points L2 between described base plate all 〉=0.5mm, L1=L2 in the present embodiment.Not contact between the assurance scolder, not excessive, also lay a solid foundation for follow-up load, the accurate location of bonding wire, simultaneously for to reduce the volume of element as far as possible, take 0.5mm as good.
Scolder 4.1 and 4.2 plays buffering, heat conduction, electric action by on high temperature and pressure-acting spot welding base plate 3.Igbt chip 1 and the diode chip for backlight unit 2 of the present embodiment are square, corresponding scolder 4.1 and 4.2 shape are also square, its sideline is sized to 1.2～1.5 times of chip size, is unfavorable for load less than 1.2, can cause the scolder waste even to cause with the bottom edge spacing too small greater than 1.5.As shown in Figure 5, if the length of side of described igbt chip is a, the length of side of corresponding solder areas is b, b=1.2a to 1.5a, in like manner, the length of side of establishing described diode chip for backlight unit is c, the length of side of corresponding solder areas is d, d=1.2c to 1.5c, during load be positioned over chip in the middle of molded solder surface, and chip center's point overlaps with scolder 8 central points and gets final product.Particularly, the length of side a as igbt chip 1 is 5mm; The length of side of diode chip for backlight unit 2 is 2mm, and all getting coefficient is 1.5, and the side length b of igbt chip scolder 4.1 is 7.5mm; The length of side d of diode chip for backlight unit scolder 4.2 is 3mm.
The solder thickness general control relies on the solder stick propulsion plant of loader to control between 20 μ m～60 μ m.The radian of conductive lead wire is moderate, can not too highly expose, and make the top of conductive lead wire and Plastic Package shell surface that certain distance is arranged, but also can not too lowly cause and other electric pole short circuit.Therefore the camber (being that the conductive lead wire peak is to the vertical range of chip surface) of conductive lead wire is controlled in 1mm to 2mm scope.At last, by injection molding machine, chip and base plate are encapsulated with plastic packaging material, realize the chip electrical property is protected.
Above-described embodiment is preferred implementation of the present utility model, and those skilled in the art's content disclosed according to the utility model specification can recognize that the utility model has multiple modification in the process of implementing.In a word, all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all being included in protection range of the present utility model.
Claims (4)
1. the IGBT device of a composite package, it is characterized in that, comprise igbt chip and diode chip for backlight unit, base plate, three pins and encapsulating shell, described base plate is connected with the second pin, with the first pin and the isolation of the 3rd pin, described igbt chip and diode chip for backlight unit bond on base plate by scolder; The collector electrode of described igbt chip (C) is realized electrical connection by scolder and base plate respectively with the negative electrode (K) of diode chip for backlight unit, the emitter of igbt chip (E) is electrically connected by routing district's realization of conductive lead wire and the 3rd pin respectively with the anode (A) of diode chip for backlight unit, and the grid of igbt chip (G) is by routing district's realization electrical connection of conductive lead wire and the first pin.
2. the IGBT device of a kind of composite package according to claim 1, it is characterized in that, at the lower surface difference plating coating metal layer of described igbt chip and diode chip for backlight unit, the collector electrode of described igbt chip (C) is realized electrical connection by metal level, scolder and base plate respectively with the negative electrode (K) of diode chip for backlight unit.
3. the IGBT device of a kind of composite package according to claim 2, is characterized in that, described metal level is the silver metal layer, and its thickness is 1 μ m to 10 μ m.
4. the IGBT device of a kind of composite package according to claim 1, is characterized in that, the thickness of described scolder is 20 μ m to 60 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207262124U CN202996833U (en) | 2012-12-25 | 2012-12-25 | Compound packaged IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207262124U CN202996833U (en) | 2012-12-25 | 2012-12-25 | Compound packaged IGBT device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202996833U true CN202996833U (en) | 2013-06-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012207262124U Expired - Lifetime CN202996833U (en) | 2012-12-25 | 2012-12-25 | Compound packaged IGBT device |
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| CN (1) | CN202996833U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
-
2012
- 2012-12-25 CN CN2012207262124U patent/CN202996833U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
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Granted publication date: 20130612 |