CN202749419U - OLED packaging structure and luminescent device - Google Patents
OLED packaging structure and luminescent device Download PDFInfo
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- CN202749419U CN202749419U CN201220439198.XU CN201220439198U CN202749419U CN 202749419 U CN202749419 U CN 202749419U CN 201220439198 U CN201220439198 U CN 201220439198U CN 202749419 U CN202749419 U CN 202749419U
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Abstract
The utility model discloses an OLED packaging structure and a luminescent device. The OLED packaging structure comprises: an underlayer substrate, OLEDs, barrier layers, and optical modulation layers, the OLEDs are formed on the underlayer substrate, and the barrier layers and the optical modulation layers are alternately formed on the OLEDs. In a technical scheme of the OLED packaging structure and the luminescent device, the barrier layers and the optical modulation layers are alternately formed on the OLEDs, the optical modulation layers improve diffusion light emitting capacity of the OLEDs and change propagation direction of partial lights, thereby reducing observation angle dependency of the OLEDs caused by micro-cavity effect.
Description
Technical field
The utility model includes the organic electro luminescent art of display device manufacture, particularly a kind of OLED encapsulating structure and luminescent device.
Background technology
Organic electroluminescence device (Organic Light-Emitting Diode, hereinafter to be referred as: OLED) active illuminating, good temp characteristic, power consumption are little, response is fast, flexible because possessing, ultra-thin and low cost and other advantages, and are referred to as third generation illusion Display Technique.At present, continue in global manufacturer under the promotion of fund input and technical research, the OLED flat panel display is just trending towards the increasingly mature and market demand rapid growth stage of volume production technology.
OLED can be divided into three kinds according to light direction, that is: end emission OLED, top emission OLED and dual emission OLED.Emission OLED refers to the OLED that light penetrates from substrate at the end, and dual emission OLED refers to light simultaneously from the OLED of substrate and top device ejaculation, and top emission OLED refers to the OLED that light penetrates from top device.Wherein, emission OLED in top is not owing to be subjected to the whether impact of printing opacity of substrate, but the aperture opening ratio of Effective Raise display floater has been expanded the design of TFT circuit on the substrate, has enriched the selection of electrode material, is conducive to the integrated of device and TFT circuit.Because OLED is very responsive to steam and oxygen, the steam and the oxygen that infiltrate in the OLED can corrode organic function layer and electrode material, have a strong impact on device lifetime, therefore in order to prolong device lifetime and to improve device stability, need to carry out encapsulation process to form the OLED encapsulating structure to OLED, particularly, can form a barrier layer at OLED, this barrier layer can comprise inorganic insulation layer and organic insulator, avoids steam and oxygen to infiltrate the purpose of OLED thereby reach.
Top emission OLED can improve device efficiency, narrow spectrum and raising colorimetric purity, but often has microcavity effect.Microcavity effect can make the electroluminescent spectrum of OLED change with observation angle, causes OLED the observation angle dependency problem to occur.
The utility model content
The utility model provides a kind of OLED encapsulating structure and luminescent device, the observation angle dependence that causes because of microcavity effect in order to reduce OLED.
For achieving the above object, the utility model provides a kind of OLED encapsulating structure, comprise: underlay substrate, OLED, barrier layer and optical modulation layer, described OLED are formed on the described underlay substrate, and described barrier layer and described optical modulation layer alternately are formed on the described OLED.
Alternatively, described barrier layer and described optical modulation layer alternately are formed on the described OLED according to the alternate cycle number, and described optical modulation layer is positioned on the described barrier layer in each alternate cycle.
Alternatively, described alternate cycle number is for more than or equal to 1 and be less than or equal to 10 positive integer.
Alternatively, described optical modulation layer comprises: clathrum and the packed layer that is positioned on the described clathrum.
Alternatively, described clathrum is made of three layers of nano-pillar film of medium/metal/metal of successively oblique growth, and described metal comprises: silver, aluminium or silver-colored aluminium mixture, described medium comprises: silicon dioxide or magnesium fluoride.
Alternatively, described packed layer is made of the oxidate nano post film of obliquely growth, and the material of described packed layer comprises: titanium dioxide, alundum (Al2O3), zinc oxide, magnesium oxide or zirconia.
Alternatively, described OLED comprises: top emission OLED or dual emission OLED.
The utility model embodiment also provides a kind of luminescent device, comprises above-mentioned arbitrary described OLED encapsulating structure.
The utlity model has following beneficial effect:
In the OLED encapsulating structure and luminescent device technical scheme that the utility model provides, barrier layer and optical modulation layer alternately are formed on the OLED, the optical modulation layer has strengthened the luminous energy power that scatters of OLED and has changed the direction of propagation of part light, thereby has reduced the observation angle dependence that OLED causes because of microcavity effect.
Description of drawings
The structural representation of a kind of OLED encapsulating structure that Fig. 1 provides for the utility model embodiment one;
Fig. 2 is the application schematic diagram of glancing angle deposition technology;
Fig. 3 is the schematic diagram of nanometer column structure;
Fig. 4 is the local amplification view of clathrum among Fig. 1;
Fig. 5 is the schematic diagram of clathrum medium light transmition;
Fig. 6 is the schematic diagram that packed layer medium light scattering is propagated;
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 7 provides for the utility model embodiment two;
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 8 provides for the utility model embodiment three;
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 9 provides for the utility model embodiment four;
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Figure 10 provides for the utility model embodiment five.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, below in conjunction with accompanying drawing OLED encapsulating structure and the luminescent device that the utility model provides is described in detail.
The structural representation of a kind of OLED encapsulating structure that Fig. 1 provides for the utility model embodiment one,
As shown in Figure 1, this OLED encapsulating structure can comprise: underlay substrate 4, OLED 1, barrier layer 2 and optical modulation layer 3, barrier layer 2 and optical modulation layer 3 alternately are formed on the OLED 1.
In the present embodiment, preferably, barrier layer 2 and optical modulation layer 3 can alternately be formed on the OLED 1 according to the alternate cycle number, and optical modulation layer 3 is positioned on the barrier layer 2 in each alternate cycle.That is: on OLED 1, barrier layer 2 and optical modulation layer 3 repeat to be formed on the OLED 1 according to the alternate cycle number with the order of barrier layer 2-optical modulation layer 3.
Wherein, the alternate cycle number is positive integer.Preferably, alternate cycle is counted n for more than or equal to 1 and be less than or equal to 10 positive integer, that is: 1≤n≤10.
In the present embodiment, optical modulation layer 3 alternately is formed on the OLED with barrier layer 2, and in each alternate cycle, optical modulation layer 3 all is positioned on the barrier layer 2.As shown in Figure 1, be greater than or equal at n in 2 the situation, then in first alternate cycle, barrier layer 2 directly is formed on the OLED 1, and in all the other alternate cycle, and barrier layer 2 is formed on the optical modulation layer 3 in the alternate cycle.
In actual applications, alternatively, barrier layer 2 and optical modulation layer 3 can also alternately be formed on the OLED 1 according to other over-over mode.For example: barrier layer 2 and optical modulation layer 3 are formed on the OLED 1 with the sequence alternate of barrier layer 2-optical modulation layer 3-barrier layer 2.
OLED 1 can comprise: top emission OLED or dual emission OLED.In the present embodiment, OLED1 is top emission OLED.OLED 1 can comprise: anode, organic luminous layer and negative electrode, and wherein, anodic formation is on underlay substrate 4, and organic luminous layer is formed on the anode, and negative electrode is formed on the organic luminous layer.Alternatively, OLED 1 also can comprise: organic function layer, particularly, this organic function layer comprises: the one deck in hole injection layer, hole transmission layer, electron transfer layer, the electron injecting layer or multilayer.Wherein, hole injection layer, hole transmission layer can be arranged between anode and the organic luminous layer, and electron transfer layer, electron injecting layer can be arranged between organic luminous layer and the cathode layer.
Preferably, OLED 1 comprises the anode on the underlay substrate 4, the hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer and the negative electrode that form successively from the bottom to top on the surface of anode.
For example: the material of anode can comprise: silver (Ag), tin indium oxide/silver/tin indium oxide (ITO/Ag/ITO) or nichrome (Ni:Cr alloy).The material of hole injection layer can comprise: 4,4 '; 4 "-three (N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 4,4 ', 4 " three (N; N benzidino) triphenylamine (TDATA), 4; 4 ', 4 "-three [2-naphthyl phenyl amino] triphenylamine (2-TNATA) or N, N, N ', N '-tetramethoxy phenyl)-benzidine (MeO-TPD) etc.The material of hole transmission layer can comprise: N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (alpha-NPB), N, N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4,4 '-diamines (TPD) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ) etc.The material of organic luminous layer can comprise: the fluorescence material of main part, for example: this fluorescence material of main part can comprise: metal complex such as oxine aluminium (Alq3) or two aromatic radical anthracene derivants are such as 9,10-two (2-naphthyl) anthracene (AND) etc., Coumarins such as N can mix in the above-mentioned fluorescence material of main part, N '-dimethylquinacridone (DMQA), 10-(2-[4-morpholinodithio)-2,3,6,7-tetrahydrochysene-1,1,7,7,-tetramethyl 1-1H, 5H, 11H-[1] benzopyran ketone group [6,7,8-ij] quinolizine-11-ketone (C545T), two pyrans classes such as 4-(the dicyano methylene)-2-tert-butyl group-6-(1,1 perhaps can mix in the fluorescence material of main part, 7,7-tetramethyl Luo Nidingji of a specified duration-4-vinyl)-and 4H-pyrans (DCJTB), other classes 4,4 ' of perhaps can mixing in the fluorescence material of main part-(two (9-ethyls-3-vinyl carbazole)-1,1 '-biphenyl (BczVBi), 1,4,7,10-tetra-tert perylene (TBPe), rubrene (Rubrene) etc.; Perhaps the material of organic luminous layer also can comprise: phosphorescence main body carbazole derivates, for example: (9,9 '-(1, the 3-phenyl) two-9H-carbazole (MCP) or 4,4 '-two (9-carbazole) biphenyl (CBP) etc., but Doping Phosphorus photoinitiator dye in the above-mentioned phosphorescence main body carbazole derivates, for example: phosphorescent coloring can comprise: single (phenanthroline) erbium (Er (dbm) 3 (phen)) of three (dibenzoyl methanes), three (2-phenylpyridines) close iridium (Ir (ppy) 3) or two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium (Firpic) etc.The material of electron transfer layer can comprise: oxine-lithium (Liq), oxine aluminium (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen) or two (2-methyl-oxine-N1,08)-(1,1 '-biphenyl-4-hydroxyl) aluminium (Balq) etc., the material of electron injecting layer can comprise: organic material such as oxine-lithium (Liq) or four (oxine) boron lithium (LiBq4) etc., also can comprise inorganic material such as lithium fluoride (LiF) or lithium nitride (Li3N) etc., the material of negative electrode can comprise: magnesium silver alloy (Mg:Ag alloy), aluminium/silver (Al/Ag) or calcium/silver (Ca/Ag).
In the utility model, alternatively, barrier layer 2 can also only comprise inorganic insulation layer, and perhaps barrier layer 2 can also only comprise: organic insulator.
Optical modulation layer 3 comprises: clathrum 31 and the packed layer 32 that is positioned on the clathrum 31.Packed layer 32 is filled in the hollow space in the clathrum 31 and is covered on the clathrum 31.Clathrum 31 and packed layer 32 prepare by the glancing angle deposition technology.Fig. 2 is the application schematic diagram of glancing angle deposition technology, and as shown in Figure 2, it is one of method for preparing optical thin film with the technology of thin-film material deposition on target base plate 41 that the glancing angle deposition technology refers in a vacuum with the angle of inclination.When evaporation source 42 will evaporate the relative substrate normal of material with incidence angle α during to target base plate 41 deposition, under the effect of self-capture-effect (self-shadowing effect), the direction that the evaporation material preferentially injects towards steam grows into the film nano column structure 43 with the space, the nanometer column structure as shown in Figure 3, Fig. 3 is the schematic diagram of nanometer column structure.The material of evaporation material can comprise: metal, oxide or fluoride, for example, metal can comprise: Au, Ag, Co, Fe, Ni or W, oxide can comprise: SiO
2, TiO
2Perhaps ZrO
2, fluoride can comprise: MgF
2And along with the variation of evaporate process incidence angle α, film nano column structure 43 will produce different voidages, thereby change the refraction index profile of rete, but the variation of refractive index has continuity.Porousness nanometer column structure 43 refractive indexes that glancing angle deposition generates have lower refractive index with respect to nature material, can near the refractive index of air, effectively reduce reflection, and this nanometer column structure 43 also possess scattering properties.Clathrum 31 and packed layer 32 all are to be made of the nano-pillar film of growing obliquely.Fig. 4 is the local amplification view of clathrum among Fig. 1, and as shown in Figure 4, clathrum 31 is positioned on the organic insulator 22, and is positioned at the below of packed layer 32.Clathrum 31 is network, and packed layer 32 is filled in the hollow space of network, and is covered on the whole clathrum 31.Clathrum 31 can be distributed in the non-luminous region of the pixel cell of underlay substrate.For making clathrum 31 form networks, the mask plate (Mask) that can use graphical in the thin film growth process of clathrum 31 blocks to be implemented in the pattern of clathrum 31 formation networks.Clathrum 31 is made of three layers of nano-pillar film of medium/metal/metal of successively oblique growth, and wherein, metal can comprise: silver (Ag), aluminium (Al) or silver-colored aluminium mixture, medium can comprise: silicon dioxide (SiO
2), magnesium fluoride (MgF
2) in one or more, wherein, preferably medium adopts silicon dioxide (SiO
2), magnesium fluoride (MgF
2) in a kind of.Packed layer 32 is made of the oxidate nano post film of obliquely growth, and the refractive index of this nano-pillar film is along away from the direction of clathrum 31 from large to small.Like this when light from the large side incident of the refractive index of packed layer 32 and from the process of the little side outgoing of refractive index, reduced greatly the probability of light generation total reflection, thereby increased the exit dose of light.Wherein, oxide can comprise: titanium dioxide (TiO
2), alundum (Al2O3) (Al
2O
3), zinc oxide, magnesium oxide (MgO) or zirconia (ZrO
2), in other words, the material of packed layer 32 can comprise: titanium dioxide (TiO
2), alundum (Al2O3) (Al
2O
3), zinc oxide (ZnO), magnesium oxide (MgO) or zirconia (ZrO
2).Because the anti-phase eelctric dipole resonance of the double layer of metal nano-pillar film in the clathrum 31 is so that medium nano-pillar film presents the negative index characteristic.The physical characteristic that the medium of negative index has is: light energy therein is opposite with the direction of propagation of phase place, when light from a kind of refractive index be positive material propagate into refractive index for negative material the time, incident ray and refracted ray are positioned at the same side of normal, thereby changed the direction of propagation of light, Fig. 5 is the schematic diagram of clathrum medium light transmition, as shown in Figure 5, when incident ray 52 is incident on the positive and negative refraction rate medium interface 51, its reflection ray 53 is reflexed to the opposite side of normal 55 by positive and negative refraction rate medium interface 51, and its refracted ray 54 passes positive and negative refraction rate medium interface 51 rear deviations to the same side of normal 55.The packed layer medium is to be made of the oblique growing nano post film of refractive index edge away from the from large to small gradual change of direction of clathrum 31.Fig. 6 is the schematic diagram that packed layer medium light scattering is propagated, as shown in Figure 6, and during light process packed layer 32, nanometer column structure 43 in the packed layer 32 makes light generation scattering, light can be propagated to a plurality of directions, thereby so that therefore the OLED more even light emission has light scattering and anti-reflection function.
The OLED encapsulating structure that present embodiment provides comprises: OLED, barrier layer and optical modulation layer, barrier layer and optical modulation layer alternately are formed on the OLED according to the alternate cycle number, the optical modulation layer has strengthened the luminous energy power that scatters of OLED and has changed the direction of propagation of part light, thereby reduced OLED because of the observation angle dependence that microcavity effect causes, improved the contrast of OLED.Barrier layer can effectively intercept steam and oxygen, prevents that steam and oxygen from infiltrating OLED inside, thereby has avoided organic function layer and the electrode material of steam and oxygen corrosion OLED, has improved device lifetime.Particularly when alternately the barrier layer of formation was multilayer with the optical modulation layer, steam and the oxygen that can more effectively avoid infiltrating corroded organic function layer and the electrode material of OLED, thereby have improved the sealing property of OLED.And when alternately the optical modulation layer of formation is multilayer with barrier layer, can more effectively reduce the observation angle dependence that causes because of microcavity effect.
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 7 provides for the utility model embodiment two, as shown in Figure 7, the method comprises:
Step 1, prepare OLED at underlay substrate.
In the present embodiment, step 1 specifically comprises:
Step 11, form anode at underlay substrate.For example: the material of anode 12 can comprise: silver (Ag), tin indium oxide/silver/tin indium oxide (ITO/Ag/ITO) or nichrome (Ni:Cr alloy).
Step 12, on anode, form organic luminous layer.Particularly, but to the description of description above-described embodiment one of organic luminous layer, repeat no more herein.
Step 13, on organic luminous layer, form negative electrode.For example: the material of negative electrode can comprise: magnesium silver alloy (Mg:Ag alloy), aluminium/silver (Al/Ag) or calcium/silver (Ca/Ag).
Particularly, can on OLED, alternately form barrier layer and optical modulation layer according to the alternate cycle number in the present embodiment, and the optical modulation layer is positioned on the barrier layer in each alternate cycle.
Wherein, the alternate cycle number is positive integer.Preferably, alternate cycle is counted n for more than or equal to 1 and be less than or equal to 10 positive integer, that is: 1≤n≤10.
In the present embodiment, step 2 specifically comprises:
Step 21, formation barrier layer.
Wherein, barrier layer comprises inorganic insulation layer and organic insulator, and then step 21 specifically can comprise:
Step 211, formation inorganic insulation layer.
Particularly, form inorganic insulation layer in the mode of magnetron sputtering, form inorganic insulation layer in the mode of plasma enhanced chemical vapor deposition, perhaps the mode with plasma auxiliary chemical vapor deposition forms inorganic insulation layer.Wherein, the material of inorganic insulation layer can comprise: oxide, sulfide, nitride, nitrogen oxide or carbon film, for example: the material of inorganic insulation layer can be alundum (Al2O3) (Al
2O
3), silicon nitride (Si
3N
4), silicon oxynitride (SiOxNy) or diamond like carbon.
Step 212, form organic insulator at inorganic insulation layer.
Particularly, mode that can be by spraying, spin coating or vacuum thermal evaporation forms the material of organic insulator at inorganic insulation layer, and the material of organic insulator is cured to process forms organic insulator.Wherein, the material of organic insulator can comprise: UV solidifies glue, polymethyl methacrylate, polyimides, Parylene, polyacrylate or acrylate monomer.
Wherein, the optical modulation layer can comprise: clathrum and the packed layer that is positioned on the clathrum, and then step 22 can comprise:
Step 221, form clathrum at barrier layer.Particularly, the organic insulator in barrier layer forms clathrum.Wherein, clathrum is made of three layers of nano-pillar film of medium/metal/metal of successively oblique growth, then particularly, setting incident angle, the mode by electron beam evaporation forms successively three layers of nano-pillar film of medium/metal/metal of oblique growth at described separator.Wherein, metal can comprise: silver (Ag), aluminium (Al) or silver-colored aluminium mixture, medium can comprise: silicon dioxide (SiO
2) or magnesium fluoride (MgF
2).Preferably, take the normal of underlay substrate as reference, set incident angle θ 1 greater than 85 ° and less than 90 ° namely: 1＜90 ° of 85 °＜θ.In the utility model, can determine to set according to the function of clathrum the process value of incident angle θ 1, in other words, the process value of the setting incident angle θ 1 that determines can realize that the function of clathrum gets final product.
Step 222, form packed layer at clathrum.Wherein, packed layer is made of the oxidate nano post film of obliquely growth, then particularly, the incident angle that increases with angle ladder in the set angle scope, the mode by electron beam evaporation forms the obliquely oxidate nano post film of growth at clathrum.Wherein, oxide can comprise: titanium dioxide (TiO
2), alundum (Al2O3) (Al
2O
3), zinc oxide (ZnO), magnesium oxide (MgO) or zirconia (ZrO
2).Wherein, the incident angle in the set angle scope all is as reference take the underlay substrate normal.Preferably, the set angle scope is the angular range between 30 ° to 90 °.For example: the set angle scope can be the angular range of: 40 ° to 90 ° angular range or 30 ° to 90 °.
Step 23, repeat n-1 step 21 and step 22, wherein, n is the alternate cycle number, and n is the positive integer greater than 1.
In the present embodiment, when n=1, then need not again execution in step 23.
Need to prove: when execution in step 21 for the first time, directly form barrier layer at the OLED for preparing in the present embodiment, and when follow-up repeated execution of steps 21, be upper one alternately in week the packed layer in the optical modulation layer of formation form barrier layer.
In actual applications, alternatively, on OLED, can also alternately form according to other over-over mode barrier layer and optical modulation layer.For example: the sequence alternate with barrier layer-optical modulation layer-barrier layer on OLED forms barrier layer and optical modulation layer.
The manufacture method of the OLED encapsulating structure that present embodiment provides comprises: alternately form barrier layer and optical modulation layer according to the alternate cycle number on the OLED for preparing, the optical modulation layer has strengthened the luminous energy power that scatters of OLED and has changed the direction of propagation of part light, thereby reduced OLED because of the observation angle dependence that microcavity effect causes, improved the contrast of OLED.Barrier layer can effectively intercept steam and oxygen, prevents that steam and oxygen from infiltrating OLED inside, thereby has avoided organic function layer and the electrode material of steam and oxygen corrosion OLED, has improved device lifetime.Particularly when alternately the barrier layer of formation was multilayer with the optical modulation layer, steam and the oxygen that can more effectively avoid infiltrating corroded organic function layer and the electrode material of OLED, thereby have improved the sealing property of OLED.And when alternately the optical modulation layer of formation is multilayer with barrier layer, can more effectively reduce the observation angle dependence that causes because of microcavity effect.In the manufacture method of the OLED encapsulating structure that present embodiment provides, optical modulation layer and OLED prepare in vacuum environment, that is to say that the optical modulation layer is similar to the preparation process condition of OLED, thereby optics modulating layer and OLED has compatibility on technique; Prepare the technique of optical modulation layer by the glancing angle deposition technology, be conducive to the large tracts of land film forming, thereby be conducive to continuous large-scale production.
Below by concrete example the scheme in above-described embodiment two is described in detail.
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 8 provides for the utility model embodiment three, as shown in Figure 8, the method comprises:
To the specific descriptions of step 301 can referring in above-described embodiment two to the description of step 1.In the present embodiment, the material of anode is silver (Ag), and the material of negative electrode is magnesium silver alloy (Mg:Ag alloy).
In the present embodiment, if n is, then need not execution in step 306 at 1 o'clock.
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Fig. 9 provides for the utility model embodiment four, as shown in Figure 9, the method comprises:
To the specific descriptions of step 401 can referring in above-described embodiment two to the description of step 1.In the present embodiment, the material of anode is tin indium oxide/silver/tin indium oxide (ITO/Ag/ITO), and the material of negative electrode is aluminium/silver (Al/Ag).
Step 402, form inorganic insulation layer in the mode of plasma enhanced chemical vapor deposition.The material of inorganic insulation layer is silicon nitride (Si
3N
4).
In the present embodiment, if n is, then need not execution in step 406 at 1 o'clock.
The flow chart of the manufacture method of a kind of OLED encapsulating structure that Figure 10 provides for the utility model embodiment five, as shown in figure 10, the method comprises:
To the specific descriptions of step 501 can referring in above-described embodiment two to the description of step 1.In the present embodiment, the material of anode is tin indium oxide/silver/tin indium oxide (ITO/Ag/ITO), and the material of negative electrode is aluminium/silver (Al/Ag).
In the present embodiment, if n is, then need not execution in step 506 at 1 o'clock.
The utility model embodiment also provides a kind of luminescent device, comprises above-mentioned arbitrary described OLED encapsulating structure.Can be applied in preparation display of organic electroluminescence, organic transistor, organic integrated circuits, organic solar batteries, organic laser and/or the organic sensor by the organic electroluminescence device after the technical solution of the utility model encapsulation.Described display of organic electroluminescence can for: oled panel, Electronic Paper, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator etc. are any to have the product of Presentation Function or parts etc.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present utility model is described, yet the utility model is not limited to this.For those skilled in the art, in the situation that does not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection range of the present utility model.
Claims (8)
1. an OLED encapsulating structure is characterized in that, comprising: underlay substrate, OLED, barrier layer and optical modulation layer, described OLED are formed on the described underlay substrate, and described barrier layer and described optical modulation layer alternately are formed on the described OLED.
2. OLED encapsulating structure according to claim 1, it is characterized in that, described barrier layer and described optical modulation layer alternately are formed on the described OLED according to the alternate cycle number, and described optical modulation layer is positioned on the described barrier layer in each alternate cycle.
3. OLED encapsulating structure according to claim 2 is characterized in that, described alternate cycle number is for more than or equal to 1 and be less than or equal to 10 positive integer.
4. according to claim 1 to 3 arbitrary described OLED encapsulating structures, it is characterized in that described optical modulation layer comprises: clathrum and the packed layer that is positioned on the described clathrum.
5. OLED encapsulating structure according to claim 4, it is characterized in that, described clathrum is made of three layers of nano-pillar film of medium/metal/metal of successively oblique growth, and described metal comprises: silver, aluminium or silver-colored aluminium mixture, described medium comprises: silicon dioxide or magnesium fluoride.
6. OLED encapsulating structure according to claim 4, it is characterized in that, described packed layer is made of the oxidate nano post film of obliquely growth, and the material of described packed layer comprises: titanium dioxide, alundum (Al2O3), zinc oxide, magnesium oxide or zirconia.
7. OLED encapsulating structure according to claim 1 is characterized in that, described OLED comprises: top emission OLED or dual emission OLED.
8. a luminescent device is characterized in that, comprises the arbitrary described OLED encapsulating structure of claim 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220439198.XU CN202749419U (en) | 2012-08-30 | 2012-08-30 | OLED packaging structure and luminescent device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220439198.XU CN202749419U (en) | 2012-08-30 | 2012-08-30 | OLED packaging structure and luminescent device |
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| CN202749419U true CN202749419U (en) | 2013-02-20 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659270A (en) * | 2012-08-30 | 2015-05-27 | 京东方科技集团股份有限公司 | OLED (organic light-emitting diode) packaging structure, manufacturing method thereof and luminescent device |
| CN105047829A (en) * | 2015-09-18 | 2015-11-11 | 京东方科技集团股份有限公司 | Packaging structure and packaging method of organic light emitting device and flexible display device |
| CN111725417A (en) * | 2019-03-22 | 2020-09-29 | 三星显示有限公司 | Display device and method for manufacturing display device |
-
2012
- 2012-08-30 CN CN201220439198.XU patent/CN202749419U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659270A (en) * | 2012-08-30 | 2015-05-27 | 京东方科技集团股份有限公司 | OLED (organic light-emitting diode) packaging structure, manufacturing method thereof and luminescent device |
| CN105047829A (en) * | 2015-09-18 | 2015-11-11 | 京东方科技集团股份有限公司 | Packaging structure and packaging method of organic light emitting device and flexible display device |
| CN105047829B (en) * | 2015-09-18 | 2017-05-10 | 京东方科技集团股份有限公司 | Packaging structure and packaging method of organic light emitting device and flexible display device |
| CN111725417A (en) * | 2019-03-22 | 2020-09-29 | 三星显示有限公司 | Display device and method for manufacturing display device |
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