CN104157793A - OLED light-emitting device and preparation method thereof - Google Patents
OLED light-emitting device and preparation method thereof Download PDFInfo
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
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- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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Abstract
The invention provides an OLED light-emitting device and a preparation method thereof. The OLED light-emitting device comprises a first electrode; an organic function layer formed on the first electrode; a second electrode formed on the organic function layer; an optical distance adjustment layer formed on the second electrode and used for adjusting the optical length of the OLED light-emitting device; and a semi-reflective semi-permeable layer formed on the optical distance adjustment layer and used for adjusting phase difference of the light emitted out from the optical distance adjustment layer when the light is reflecting. According to the OLED light-emitting device and the preparation method thereof, the adjustment difficulty of the device can be reduced, the production qualified rate is improved, and the cost is reduced. Besides, the thickness of the electro-optical conversion part of the device is far smaller than that of the structure in the prior art, so that drive voltage of the whole device gets smaller, electro-optical conversion efficiency of the device is improved at the meanwhile power consumption is reduced, and the service life of the device is increased. Besides, through the OLED light-emitting device, colour difference is also improved.
Description
Technical field
The disclosure relates to Display Technique field, is specifically related to a kind of OLED luminescent device and preparation method thereof.
Background technology
Compare the display panels in conventional art, OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) display unit has that reaction speed is faster, colorimetric purity and the feature such as brightness is more excellent, contrast is higher, visual angle is wider.Therefore, obtained gradually the increasingly extensive concern of Display Technique developer.In the prior art; in order to improve colorimetric purity and the light intensity of OLED display unit; and obtain a reasonable chromaticity coordinates value, conventionally can use the OLED luminescent device of top emission-type structure, to facilitate by regulating its micro-cavity structure to realize the adjusting to illumination effect.
As shown in Figure 1, be the structural representation of a kind of common top emission-type OLED luminescent device in prior art; It mainly comprises anode substrate 110, organic function layer 100, cathode layer 160 and the light removing layer 170 (Capping Layer) setting gradually.Wherein, organic function layer 100 comprises again: be formed on successively the first hole injection layer 121, the second hole injection layer 122, the 3rd hole injection layer 123, hole transmission layer 130, organic luminous layer 140 and electron transfer layer 150 on anode substrate 110.From the light of organic luminous layer 140 outgoing, the micro-cavity structure that anode substrate 110 and cathode layer 160 form, there is destructive interference and the constructive interference of light, finally only keep the light intensity of predetermined wavelength and reduce the light intensity of other wavelength.
Wherein, mainly referring to by regulating one deck or which floor thickness in the first hole injection layer 121, the second hole injection layer 122, the 3rd hole injection layer 123, hole transmission layer 130, organic luminous layer 140 and electron transfer layer 150 of the micro-cavity structure of adjusting OLED luminescent device, to realize the long adjusting in micro-cavity structure chamber, thereby can change light path, be met the optical color parameter of the luminous spectrum of requirement.
Although the structure of above-mentioned OLED luminescent device and preparation method are ripe, but still have some problems.For example, anode substrate 110, organic function layer 100 and cathode layer 160 are both as electric light conversion portion, again as optics adjustment member, like this because the carrier transport factor of organic material is very low, if the gross thickness of organic function layer changes, the driving voltage of OLED luminescent device also can change thereupon, causes the electric property of device to change, and therefore can increase the adjusting difficulty of device performance; And if regulate which floor thickness of certain one deck in organic function layer or certain, the imbalance that may cause hole in OLED luminescent device and electronics carrier quantity to become, causes device electro-optical conversion efficiency to decline.
[background technology]
110: anode substrate
121: the first hole injection layers
122: the second hole injection layers
123: the three hole injection layers
130: hole transmission layer
140: organic luminous layer
150: electron transfer layer
160: cathode layer
170: light removing layer
100: organic function layer
Summary of the invention
Object of the present disclosure is one or more above-mentioned problem, and a kind of OLED luminescent device, OLED luminescent device preparation method and OLED display unit are provided, for overcoming at least to a certain extent one or more above-mentioned problem.
Other characteristics of the present disclosure and advantage become the detailed description by below obviously, or the partly acquistion by practice of the present disclosure.
According to first aspect of the present disclosure, a kind of OLED luminescent device, comprising:
The first electrode;
Be formed at the organic function layer on the first electrode;
Be formed at the second electrode on described organic function layer;
The light path being formed on described the second electrode is adjusted layer, for adjusting the optical length of described OLED luminescent device; And,
Be formed at described light path and adjust the half-reflection and half-transmission layer on layer, for adjusting the phase difference of adjusting the light reflex time generation of layer outgoing from described light path.
In a kind of example embodiment of the present disclosure, the material that described light path is adjusted layer is the organic material based on arylamine.
In a kind of example embodiment of the present disclosure, described organic function layer comprises hole injection layer, hole transmission layer, organic luminous layer and the electron transfer layer being set in turn on described the first electrode; The material that described light path is adjusted layer is identical with the material of described hole transmission layer.
In a kind of example embodiment of the present disclosure, the material of described half-reflection and half-transmission layer is argent.
In a kind of example embodiment of the present disclosure, the area of described half-reflection and half-transmission layer and light path adjustment layer is all less than the area of described the second electrode.
In a kind of example embodiment of the present disclosure, also comprise:
Be formed at the light removing layer on described half-reflection and half-transmission layer.
According to second aspect of the present disclosure, a kind of OLED luminescent device preparation method, comprising:
On a substrate, form the first electrode;
On described the first electrode, form organic function layer;
On described organic function layer, form the second electrode;
On described the second electrode, form light path and adjust layer; Described light path adjustment layer is for adjusting the optical length of described OLED luminescent device; And,
In described light path, adjust layer and above form half-reflection and half-transmission layer, described half-reflection and half-transmission layer is for adjusting the phase difference of adjusting the light reflex time generation of layer outgoing from described light path.
In a kind of example embodiment of the present disclosure, the material that forms described light path adjustment layer is the organic material based on arylamine.
In a kind of example embodiment of the present disclosure, on described the first electrode, form organic function layer and comprise:
On described the first electrode, form successively hole injection layer, hole transmission layer, organic luminous layer and electron transfer layer; The material that forms described light path adjustment layer is identical with the material of described hole transmission layer.
In a kind of example embodiment of the present disclosure, the material that forms described half-reflection and half-transmission layer is argent.
In a kind of example embodiment of the present disclosure, the area of described half-reflection and half-transmission layer and light path adjustment layer is all less than the area of described the second electrode.
In a kind of example embodiment of the present disclosure, also comprise:
On described half-reflection and half-transmission layer, form light removing layer.
According to the third aspect of the present disclosure, a kind of OLED display floater, comprises any one above-mentioned OLED luminescent device.
In the OLED luminescent device providing in the disclosure, by electric light conversion portion and optics adjustment member are independently got up, thereby can regulate individually respectively electric property and the optical property of device, make the electric property of whole device and optical property reach respectively optimum state.Owing to can't affect the electric property of device when regulating the optical property of device, therefore can reduce the adjustment difficulty of device, improve and produce yield and reduce costs.And, because electric light conversion portion and optics adjustment member are relatively independent respectively, therefore in device, in the Thickness Ratio prior art of electric light conversion portion, the thickness of structure is little a lot, it is less that the driving voltage of whole like this device can become, and then when reducing power consumption, improve the electro-optical efficiency of device, increase the useful life of device.In addition the OLED luminescent device providing by the disclosure, also makes moderate progress for colour cast.
For enabling further to understand feature of the present invention and technology contents, refer to following about detailed description of the present invention and accompanying drawing, but the detailed description here and accompanying drawing are only for the present invention is described, but not claim scope of the present invention is done to any restriction.
Accompanying drawing explanation
By describe its example embodiment in detail with reference to accompanying drawing, above-mentioned and further feature of the present disclosure and advantage will become more obvious.
Fig. 1 is the structural representation of a kind of OLED luminescent device in prior art;
Fig. 2 is the structural representation of a kind of OLED luminescent device in disclosure example embodiment;
Fig. 3 is the simulated experiment result curve figure of OLED luminescent device in prior art;
Fig. 4 is the simulated experiment result curve figure of OLED luminescent device in the disclosure;
Fig. 5 is the schematic flow sheet of a kind of OLED luminescent device preparation method in disclosure example embodiment.
Description of reference numerals:
[embodiment]
210: the first electrodes
220: hole injection layer
230: hole transmission layer
240: organic luminous layer
250: electron transfer layer
260: the second electrodes
270: light removing layer
280: light path is adjusted layer
290: semi-transparent semi-reflecting layer
200: organic function layer
S1-S6: step
Embodiment
Referring now to accompanying drawing, example embodiment is more fully described.Yet example embodiment can be implemented in a variety of forms, and should not be understood to be limited to execution mode set forth herein; On the contrary, provide these execution modes to make the disclosure by comprehensive and complete, and the design of example embodiment is conveyed to those skilled in the art all sidedly.In the drawings, for clear, exaggerated the thickness of region and layer.Identical in the drawings Reference numeral represents same or similar structure, thereby will omit their detailed description.
In addition, described feature, structure or characteristic can be combined in one or more embodiment in any suitable manner.In the following description, thus provide many details to provide fully understanding embodiment of the present disclosure.Yet, one of skill in the art will appreciate that and can put into practice technical scheme of the present disclosure and there is no one or more in described specific detail, or can adopt other method, constituent element, material etc.In other cases, be not shown specifically or describe known configurations, material or operation to avoid fuzzy each side of the present disclosure.
First a kind of OLED luminescent device is provided in this example embodiment.As shown in Figure 2, this OLED luminescent device is top emission-type structure, and it comprises the first electrode 210, be formed at organic function layer 200 on the first electrode 210, be formed at the second electrode 260 on described organic function layer 200, be formed at the light path adjustment layer 280 on the second electrode 260 and be formed at described light path and adjust the half-reflection and half-transmission layer 290 on layer 280.Certainly, it can be also end emission-type structure, dual emission structure etc.; Wherein, the first electrode 210, organic function layer 200 and the second electrode 260 are as electric light conversion portion, and light path adjustment layer 280 and half-reflection and half-transmission layer 290 are as optics adjustment member.For example:
Described the first electrode 210 can be used as negative electrode, and corresponding described the second electrode 260 is anode; Or described the first electrode 210 can be used as anode, and corresponding described the second electrode 260 is negative electrode.In this example embodiment, described the first electrode 210 is total reflection anode, and described the second electrode 260 is transparent cathode.
Described the first electrode 210 can be made by the material with larger work function, thereby hole can be easy to be injected in organic function layer 200, and its material specifically can comprise: metal, such as silver, zinc, gold etc. and alloy thereof; Metal oxide, such as zinc oxide, indium oxide, tin indium oxide (ITO), indium zinc oxide (IZO) etc.; The compound of metal and oxide or conducting polymer etc.In addition, in top emission type organic luminescent device, for the output that sees through the light sending at top is maximized, can reflector layer be set in the bottom of the first electrode 210, or utilize the first electrode 210 own as reflector layer.
Described the second electrode 260 can be made by the material with smaller work function, thereby electronics can be easy to be injected in organic function layer 200, and its material specifically can comprise metal, for example magnesium, calcium, sodium, potassium, silver and alloy thereof; Or composite material, for example LiF/Al or LiO
2/ Al etc.Yet, in the situation that described the second electrode 260 for example, is made by opaque material (metal), described the second electrode 260 must be formed and has compared with minimal thickness and transparent rete.
Described organic function layer 200 can have sandwich construction.For example, it can comprise hole injection layer 220, hole transmission layer 230, organic luminous layer 240, electron transfer layer 250 etc.The material of described hole injection layer 220 is preferably under low-voltage can accept the material from the hole of described the first electrode 210 ideally.The material of described hole transmission layer 230 is preferably the suitable material with high hole mobility, with can be from hole injection layer 220 transporting holes to organic luminous layer 240.The material of described hole transmission layer 230 specifically can include, but are not limited to: the organic material based on arylamine, conducting polymer and have block copolymer of conjugate moiety and non-conjugated part etc. simultaneously.The material of described organic luminous layer 240 is preferably can be by accepting and the compound hole from hole transmission layer 230 and send the material of visible ray from the electronics of electron transfer layer 250.The material of described electron transfer layer 250 is preferably the suitable material with high electron mobility, and they can be from the second electrode 260 transmission electronics to organic luminous layer 240.
Described light path adjustment layer 280 is for adjusting the optical length of described OLED luminescent device, and described half-reflection and half-transmission layer 290 is for adjusting the phase difference of adjusting the light reflex time generation of layer 280 outgoing from described light path.From the light of organic luminous layer 240 outgoing, between described the first electrode 210 and half-reflection and half-transmission layer 290, be reflected, the first electrode 210 and half-reflection and half-transmission layer 290 form micro-cavity structure and produce microcavity effect, cause occurring destructive interference and the constructive interference of light, finally only keep the light intensity of predetermined wavelength and reduce the light intensity of other wavelength.When carrying out the adjustment of OLED luminescent device micro-cavity structure, on the one hand, can control reflectivity and the transmitance of light in half-reflection and half-transmission layer 290 by regulating the thickness of half-reflection and half-transmission layer 290, thereby regulate the phase difference of light reflex time generation in half-reflection and half-transmission layer 290; On the other hand, can adjust the thickness of layer 280 by adjusting light path, thereby regulate at an easy rate the optical length of whole OLED luminescent device.Like this, by regulating the reflected phase will of light in half-reflection and half-transmission layer 290 thickness poor and adjusting light path adjustment layer 280 just can be met the micro-cavity structure needing.
In this example embodiment, the material of described light path adjustment layer 280 can be identical with the material of described hole transmission layer 230.The identical one side of material of the material of described light path adjustment layer 280 and described hole transmission layer 230 need not be introduced new material when actual production again, can improve yield etc.; On the other hand, the refractive index of the material of hole transmission layer 230 is also proper.For example, its instantiation can include, but are not limited to: the organic material based on arylamine, conducting polymer and have block copolymer of conjugate moiety and non-conjugated part etc. simultaneously.Certainly, the material that light path is adjusted layer 280 can be also other organic substances or inorganic substances, and for example, it specifically can also comprise silicon nitride, silicon oxynitride etc.In this example embodiment, the material of described half-reflection and half-transmission layer 290 is preferably argent, this is the refractive index n less (n<1) due to argent, and absorption coefficient k is large (k>1), therefore after the microcavity effect effect through whole device, can obtain purer spectrum.
In addition, the OLED luminescent device in this example embodiment can also comprise the light removing layer 270 being formed on described half-reflection and half-transmission layer 290.Light removing layer 270 is limited in for taking out the light beam of propagating in described micro-cavity structure, increases the light from described half-reflection and half-transmission layer 290 outgoing, thereby further promotes the electro-optical efficiency of OLED luminescent device.Described smooth removing layer 270 can comprise a microlens array film and at least one optical thin film etc.
In this example embodiment, by the electric light conversion portion of OLED luminescent device and optics adjustment member are independently got up, at least can realize following advantage:
The first, can regulate individually respectively electric property and the optical property of device, make the electric property of whole device and optical property reach respectively optimum state.Concrete control method can be: first adjust the electric light conversion portion of device, make its electro-optical efficiency reach optimum value, and then adjust the optics adjustment member of device, make the photochromic optimum value that reaches of device outgoing.In whole process, when regulating the optical property of device, can't affect the electric property of device, therefore can reduce the adjustment difficulty of device, improve and produce yield and reduce costs.
Second, because electric light conversion portion and optics adjustment member are relatively independent respectively, therefore in device, in the Thickness Ratio prior art of electric light conversion portion, the thickness of structure is little a lot (for example, one of the object that a plurality of hole injection layers 122,123 are additionally set in Fig. 1 is for the illumination effect of adjuster part, in the disclosure, can save corresponding rete), it is less that the driving voltage of whole like this device can become, and then when reducing power consumption, improve the electro-optical efficiency of device, increase the useful life of device.
The 3rd, the experimental simulation result in comparison diagram 3 and Fig. 4 can find, in the situation that color saturation is consistent, in this example embodiment, OLED luminescent device, except light efficiency has and improves significantly than original structure, and also makes moderate progress for colour cast.
Further, in this example embodiment, also provide a kind of method of preparing above-mentioned OLED luminescent device.As shown in Figure 5, this OLED luminescent device preparation method mainly comprises:
S1. on a substrate, form the first electrode 210; This substrate can be the array base palte that is formed with switching thin-film transistor and drives the pixel-driving circuits such as thin-film transistor.This step can specifically comprise:
By vacuum evaporation or magnetron sputtering film forming, add one or more in the methods such as etching and on described substrate, form the first electrode 210 of one deck patterning.Described the first electrode 210 of take in this example embodiment is total reflection anode, described the second electrode 260 for transparent cathode be example, the material that forms described the first electrode 210 preferably has the material of larger work function, thereby hole can be easy to be injected in organic function layer 200, its material specifically can comprise: metal (for example silver), metal oxide (for example ITO), the compound of metal and oxide or conducting polymer etc.In addition, for the output that sees through the light sending at top is maximized, can form reflector layer in the bottom of the first electrode 210, or utilize the first electrode 210 own as reflector layer.
S2. on described the first electrode 210, form organic function layer 200.This step can specifically comprise:
By one or more in the methods such as vacuum evaporation, spin coating, ink-jet or slot coated, on described the first electrode 210, form successively hole injection layer 220, hole transmission layer 230, organic luminous layer 240 and the electron transfer layer 250 of patterning; The material that forms described light path adjustment layer 280 is identical with the material of described hole transmission layer 230.The material of described hole injection layer 220 is preferably under low-voltage can accept the material from the hole of described the first electrode 210 ideally.The material of described hole transmission layer 230 is preferably the suitable material with high hole mobility.The material of described hole transmission layer 230 specifically can include, but are not limited to: the organic material based on arylamine, conducting polymer and have block copolymer of conjugate moiety and non-conjugated part etc. simultaneously.The material of described organic luminous layer 240 is preferably can be by accepting and the compound hole from hole transmission layer 230 and send the material of visible ray from the electronics of electron transfer layer 250.The material of described electron transfer layer 250 is preferably the suitable material with high electron mobility.
S3. on described organic function layer 200, form the second electrode 260;
By one or more in the methods such as vacuum evaporation or magnetron sputtering, on described organic function layer 200, form the second electrode 260 of one deck patterning.The material that forms described the second electrode 260 in this example embodiment is preferably the material with smaller work function, thereby electronics can be easy to be injected in organic function layer 200, its material specifically can comprise metal (for example magnesium, silver and alloy thereof) and composite material etc.Yet, in the situation that described the second electrode 260 for example, is made by opaque material (metal), described the second electrode 260 must be formed and has compared with minimal thickness and transparent rete.
S4. on described the second electrode 260, form light path and adjust layer 280; This step can specifically comprise:
By in the methods such as vacuum evaporation, spin coating, ink-jet or slot coated one or more form patterning on the second electrode 260 light path adjust layer 280.In this example embodiment, the material that forms described light path adjustment layer 280 can be identical with the material that forms described hole transmission layer 230.Certainly, the material of light path adjustment layer 280 can be also other organic substances or inorganic substances.
S5. on described light path adjustment layer 280, form half-reflection and half-transmission layer 290; This step can specifically comprise:
By one or more in the methods such as vacuum evaporation or magnetron sputtering, on described light path adjustment layer 280, form one deck half-reflection and half-transmission layer 290.In this example embodiment, the material that forms described half-reflection and half-transmission layer 290 is preferably argent, this is the refractive index n less (n<1) due to argent, and absorption coefficient k is large (k>1), therefore after the microcavity effect effect through whole device, can obtain purer spectrum.
It should be noted that, in forming the process of described light path adjustment layer 280 and half-reflection and half-transmission layer 290, the opening of the mask plate using (for example metal cover or precision metallic shade) is less than the opening of the mask plate using in forming the process of the second electrode 260, so that the light path adjustment layer 280 forming and the area of half-reflection and half-transmission layer 290 are less than the area of described the second electrode 260, thereby avoid light path adjustment layer 280 and half-reflection and half-transmission layer 290 to hide the second electrode 260 completely and cause the second electrode 260 cannot draw with other circuit to be connected.Certainly, can be also that the opening that forms the mask plate using in the process of the second electrode 260 is greater than the opening that forms the mask plate that other layers use, thereby facilitate drawing of the second electrode 260 etc.
OLED preparation method in this example embodiment can also comprise:
S6. on described half-reflection and half-transmission layer 290, form light removing layer 270.This step can specifically comprise:
By one or more in the methods such as vacuum evaporation, spin coating, ink-jet, slot coated or photoetching process, on institute's half-reflection and half-transmission layer 290, form light removing layer 270, thereby further promote the electro-optical efficiency of OLED luminescent device.
Further, in this example embodiment, also provide a kind of oled panel.The OLED luminescent device providing in above-mentioned example embodiment is provided this OLED.Owing to comprising above-mentioned OLED luminescent device, therefore can regulate individually respectively electric property and the optical property of device, make electric property and the optical property of whole device reach respectively optimum state, reduce the adjustment difficulty of device, improve and produce yield and reduce costs.And, independent electric light conversion portion and optics adjustment member are relatively independent respectively, make the thickness of structure in the Thickness Ratio prior art of electric light conversion portion in device little a lot, thereby reduced driving voltage, and then when reducing power consumption, improve the electro-optical efficiency of device, increase the useful life of device.In addition, in this oled panel, for colour cast, also make moderate progress.
The disclosure is described by above-mentioned related embodiment, yet above-described embodiment is only for implementing example of the present disclosure.Must be pointed out that, the embodiment having disclosed does not limit the scope of the present disclosure.On the contrary, the change of doing within not departing from spirit and scope of the present disclosure and retouching, all belong to scope of patent protection of the present disclosure.
Claims (10)
1. an OLED luminescent device, is characterized in that, comprising:
The first electrode;
Be formed at the organic function layer on the first electrode;
Be formed at the second electrode on described organic function layer;
The light path being formed on described the second electrode is adjusted layer, for adjusting the optical length of described OLED luminescent device; And,
Be formed at described light path and adjust the half-reflection and half-transmission layer on layer.
2. OLED luminescent device according to claim 1, is characterized in that, the material that described light path is adjusted layer is the organic material based on arylamine.
3. OLED luminescent device according to claim 1, is characterized in that, the material of described half-reflection and half-transmission layer is argent.
4. OLED luminescent device according to claim 1, is characterized in that, the area of described half-reflection and half-transmission layer and light path adjustment layer is all less than the area of described the second electrode.
5. OLED luminescent device according to claim 3, is characterized in that, the area of described half-reflection and half-transmission layer and light path adjustment layer is all less than the area of described the second electrode.
6. OLED luminescent device according to claim 1, is characterized in that, also comprises:
Be formed at the light removing layer on described half-reflection and half-transmission layer.
7. an OLED luminescent device preparation method, is characterized in that, comprising:
On a substrate, form the first electrode;
On described the first electrode, form organic function layer;
On described organic function layer, form the second electrode;
On described the second electrode, form light path and adjust layer; Described light path adjustment layer is for adjusting the optical length of described OLED luminescent device; And,
In described light path, adjust layer and above form half-reflection and half-transmission layer, described half-reflection and half-transmission layer is for adjusting the phase difference of adjusting the light reflex time generation of layer outgoing from described light path.
8. OLED luminescent device preparation method according to claim 7, is characterized in that, the material that forms described light path adjustment layer is the organic material based on arylamine.
9. OLED luminescent device preparation method according to claim 7, is characterized in that, the material that forms described half-reflection and half-transmission layer is argent.
10. OLED luminescent device preparation method according to claim 7, is characterized in that, the area of described half-reflection and half-transmission layer and light path adjustment layer is all less than the area of described the second electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161631A (en) * | 2015-07-21 | 2015-12-16 | 上海和辉光电有限公司 | Organic light-emitting diode device, preparation method thereof, and organic light-emitting display panel |
| CN109427988A (en) * | 2017-08-21 | 2019-03-05 | 上海和辉光电有限公司 | Display panel and display device |
| CN110379934A (en) * | 2019-07-12 | 2019-10-25 | 昆山国显光电有限公司 | A kind of display panel and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070120464A1 (en) * | 2004-09-28 | 2007-05-31 | Satoshi Okutani | Display |
| WO2011030620A1 (en) * | 2009-09-09 | 2011-03-17 | Fujifilm Corporation | Organic el device optical member and organic el device |
| CN102598864A (en) * | 2009-11-05 | 2012-07-18 | 佳能株式会社 | Display device |
| CN103887438A (en) * | 2012-11-09 | 2014-06-25 | 三星电子株式会社 | Organic light emitting device |
| CN103928495A (en) * | 2013-12-31 | 2014-07-16 | 上海天马有机发光显示技术有限公司 | OLED display panel, manufacturing method thereof and display device |
-
2014
- 2014-08-19 CN CN201410409398.4A patent/CN104157793A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070120464A1 (en) * | 2004-09-28 | 2007-05-31 | Satoshi Okutani | Display |
| WO2011030620A1 (en) * | 2009-09-09 | 2011-03-17 | Fujifilm Corporation | Organic el device optical member and organic el device |
| CN102598864A (en) * | 2009-11-05 | 2012-07-18 | 佳能株式会社 | Display device |
| CN103887438A (en) * | 2012-11-09 | 2014-06-25 | 三星电子株式会社 | Organic light emitting device |
| CN103928495A (en) * | 2013-12-31 | 2014-07-16 | 上海天马有机发光显示技术有限公司 | OLED display panel, manufacturing method thereof and display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161631A (en) * | 2015-07-21 | 2015-12-16 | 上海和辉光电有限公司 | Organic light-emitting diode device, preparation method thereof, and organic light-emitting display panel |
| CN109427988A (en) * | 2017-08-21 | 2019-03-05 | 上海和辉光电有限公司 | Display panel and display device |
| CN109427988B (en) * | 2017-08-21 | 2021-02-12 | 上海和辉光电股份有限公司 | Display panel and display device |
| CN110379934A (en) * | 2019-07-12 | 2019-10-25 | 昆山国显光电有限公司 | A kind of display panel and display device |
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Application publication date: 20141119 |