CN202749377U - N-type solar cell module and N-type solar cell silicon wafer - Google Patents
N-type solar cell module and N-type solar cell silicon wafer Download PDFInfo
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- CN202749377U CN202749377U CN 201220160711 CN201220160711U CN202749377U CN 202749377 U CN202749377 U CN 202749377U CN 201220160711 CN201220160711 CN 201220160711 CN 201220160711 U CN201220160711 U CN 201220160711U CN 202749377 U CN202749377 U CN 202749377U
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Abstract
The utility model provides an N-type solar cell silicon wafer. A main grid line and a plurality of auxiliary grid lines communicated with the main grid are arranged on the surface of the silicon wafer, and a grid line group at least partially composed of a plurality of conductive grid lines is arranged on the main grid line. According to the utility model, the auxiliary grid lines are used for collecting photo-generated carriers generated on the surface of the N-type solar cell silicon wafer and transmitting the photo-generated carriers to the main grid line, and the photo-generated carriers are transmitted to an external circuit through the main grid line and the grid line group on the main grid line; the grid line group is composed of a plurality of conductive grid lines, and compared with the solid main grid line, the grid line group requires less slurry, so that the printing cost of the main grid line is reduced; and the main grid line is composed of a plurality of conductive grid lines, so that the area of the slurry coating the main grid line is reduced and the photoelectric conversion efficiency of the N-type solar cell is increased to some extent. The utility model further provides an N-type solar cell module, comprising a terminal box and an N-type solar cell silicon wafer connected with the terminal box, wherein the N-type solar cell silicon wafer is an N-type solar cell silicon wafer of the above structure.
Description
Technical field
The utility model relates to technical field of solar cell manufacturing, more particularly, relates to a kind of N-type solar module and N-type silicon chip of solar cell.
Background technology
Crystal silicon solar energy battery is arrived every field by large-scale application, and its good stability and ripe technological process are the bases of its large-scale application.The N-type solar cell is as one type of crystal silicon solar energy battery, and it is take the N-type pulling of silicon single crystal as matrix, and the back side of silicon chip is to be coated with SiO
2And SIN
xThe P type emitter junction of the boron diffusion preparation of dual layer passivation film, the front of silicon chip is the front-surface field of phosphorus diffusion preparation, has been coated with the film of passivation and antireflective effect on the front-surface field.
As shown in Figure 1, Fig. 1 is crystal silicon solar energy battery production technological process in the prior art.During the production of N-type solar cell, at first need the silicon chip of making the N-type solar cell is cleaned, process by chemical cleaning reaches to be processed the structuring of silicon chip surface, then the silicon chip after will cleaning carries out diffusion technology, P type silicon chip becomes N-type in the diffusion rear surface, form the P-N knot, carry out periphery etching process to the silicon chip that forms the P-N knot this moment, to remove the conductive layer that in diffusion technology, forms at silicon chip edge, then through panel PECVD (Plasma Enhanced Chemical Vapor Deposition-plasma enhanced chemical vapor deposition method) technique, be depositing antireflection film, the making such as typography and sintering process obtain satisfactory N-type solar cell.
Crystal silicon solar energy battery changes the operation that prints electrode over to behind the PECVD depositing antireflection film, mainly finish the printing of battery front side electrode, backplate in this operation.N-type solar cell surface electrode comprises main grid line and many auxiliary grid lines, auxiliary grid line is connected with the main grid line, auxiliary grid line is used for absorbing by the photo-generated carrier that forms after the silicon chip opto-electronic conversion, and photo-generated carrier is passed to the main grid line, then the main grid line photo-generated carrier that will be delivered on it is passed in the external circuit.Generally adopt at present screen printing technique to make electrode in the large-scale production of N-type solar cell, the technique that prints electrode is link important in the production process, and the printing quality of electrode directly affects performance and the conversion efficiency of N-type solar cell.
Screen printing technique mainly adopts the silk-screen plate of making, with certain method silk screen is contacted with the substrate of N-type silicon chip of solar cell to be printed, make slurry Uniform Flow on silk screen, inject mesh according to mask pattern, when silk screen is thrown off substrate, slurry is just transferred on the relevant position of substrate from mesh with the shape of mask image, finishes the image printing of slurry.
As shown in Figure 2, Fig. 2 is the structure chart of main grid line on the N-type silicon chip of solar cell in the prior art.Main grid line 1 is conducted with the middle part of many auxiliary grid lines 2, the main grid line 1 of traditional N-type solar energy energy battery is at the positive rectangular main grid line 1 that forms of N-type silicon chip of solar cell by one-step print, solid construction is mainly used in the design of main grid line 1, the main grid line 1 that adopts solid construction to design has increased the use of slurry, because the consumption of slurry is occupied larger proportion in the production cost of battery, therefore increased the production cost of battery.Main grid line 1 adopts the design of solid construction, also so that a part of light-receiving area on the silicon chip is covered by the main grid line fully, has reduced to a certain extent the photoelectric conversion efficiency of silicon chip.
Therefore, the use that how to realize reducing N-type silicon chip of solar cell surface slurry improves the photoelectric conversion efficiency of N-type solar cell simultaneously to reduce cost, is present those skilled in the art's problem demanding prompt solution.
The utility model content
In view of this, the utility model provides a kind of N-type solar module and N-type silicon chip of solar cell, reduces the use of the surperficial slurry of N-type silicon chip of solar cell with realization to reduce cost, improves simultaneously the photoelectric conversion efficiency of N-type solar cell.
In order to achieve the above object, the utility model provides following technical scheme:
A kind of N-type silicon chip of solar cell, many auxiliary grid lines that are provided with the main grid line on it and are conducted with described main grid line, at least a portion is served as reasons many and is conducted the grid line groups that grid line consists of on the described main grid line.
Preferably, in above-mentioned N-type silicon chip of solar cell, the parallel distribution of many described conduction grid lines.
Preferably, in above-mentioned N-type silicon chip of solar cell, the spacing between any adjacent two described conduction grid lines all equates.
Preferably, in above-mentioned N-type silicon chip of solar cell, many described conduction grid lines of described main grid line consist of.
Preferably, in above-mentioned N-type silicon chip of solar cell, described grid line group comprises solid part and hollow-out parts, and described hollow-out parts and described solid part distribute successively along the length direction of described main grid line.
Preferably, in above-mentioned N-type silicon chip of solar cell, described hollow-out parts consists of after connecting the parallel distribution of grid line by many.
Preferably, in above-mentioned N-type silicon chip of solar cell, the spacing between any adjacent two described connection grid lines all equates.
Preferably, in above-mentioned N-type silicon chip of solar cell, described main grid line forms after being connected successively by a plurality of described grid line groups.
Preferably, in above-mentioned N-type silicon chip of solar cell, two ends of described main grid line all are set to solid grid line.
A kind of N-type solar module comprises terminal box and the N-type silicon chip of solar cell that is attached thereto, and described N-type silicon chip of solar cell is aforesaid N-type silicon chip of solar cell.
Many the auxiliary grid lines that the N-type silicon chip of solar cell that the utility model provides, its surface are provided with the main grid line and are conducted with the main grid line, at least a portion is served as reasons many and is conducted the grid line groups that grid line consists of on the main grid line.At least a portion many grid line groups that the conduction grid line consists of of serving as reasons are set on the main grid line, every auxiliary grid line all is conducted with the main grid line, guaranteed to be passed to photo-generated carrier on the main grid line by every auxiliary grid line, also can through the main grid line to external circuit, guarantee the continuous propagation function of main grid line to photo-generated carrier after the transmission through the grid line group; Simultaneously, the structure that the main grid line adopts many conduction grid lines to consist of is compared with the main grid line of solid construction, and it has reduced the use amount of slurry, thereby has reduced the cost of main grid line printing.The grid line group of many conduction grid line formations is with respect to solid main grid line structure, in the use amount that reduces slurry, it is again so that slurry covers the area of the main grid line position on N-type silicon chip of solar cell surface reduces, namely enlarge N-type silicon chip of solar cell surface and carried out the light-receiving area of opto-electronic conversion, can improve to a certain extent the photoelectric conversion efficiency of N-type solar cell.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is N-type silicon solar cell production technological process in the prior art;
Fig. 2 is the structure chart of main grid line on the N-type silicon chip of solar cell in the prior art;
The structural representation of the N-type silicon chip of solar cell that Fig. 3 provides for the utility model;
The structural representation of the N-type silicon chip of solar cell with solid part and hollow-out parts that Fig. 4 provides for the utility model.
Embodiment
The utility model discloses a kind of N-type solar module and N-type silicon chip of solar cell, realized reducing the use of N-type silicon chip of solar cell surface slurry, reduced cost, improved simultaneously the photoelectric conversion efficiency of N-type solar cell.
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is carried out clear, complete description, obviously, described fact Example only is the utility model part fact Example, rather than whole embodiment.Based on embodiment of the present utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 3, the structural representation of the N-type silicon chip of solar cell that provides for the utility model of Fig. 3.
The present embodiment provides a kind of N-type silicon chip of solar cell, many the auxiliary grid lines 32 that its surface is provided with main grid line 3 and is conducted with the main grid line, N-type silicon chip of solar cell surface is passed to main grid line 3 through the photo-generated carrier that opto-electronic conversion forms after auxiliary grid line 32 is collected, be passed to external circuit by main grid line 3 again.At least a portion is served as reasons many and is conducted the grid line groups 31 that grid line consists of on the main grid line 3.
At least a portion on the main grid line 3 is set to the grid line group 31 by many conduction grid line structures, it is finished auxiliary grid line 32 is passed to the function that photo-generated carrier on the main grid line 3 is delivered to external circuit by every, namely, can realize the conducting of other parts of grid line group 31 and main grid line 3, guaranteed the continuous propagation function of 3 pairs of photo-generated carriers of main grid line, simultaneously, compare with the main grid line with solid construction, the grid line group 31 that is made of many conduction grid lines has reduced the use amount of slurry, thereby has reduced the cost of main grid line 3 printings.By the main grid line of many grid line groups 31 that consist of of conduction grid lines with respect to solid construction, reduced the use amount of slurry, so that covering the area of main grid line 3 positions on N-type silicon chip of solar cell surface, slurry reduces, namely enlarge N-type silicon chip of solar cell surface and carried out the light-receiving area of opto-electronic conversion, can improve to a certain extent the photoelectric conversion efficiency of N-type solar cell.
By the grid line group 31 of many conduction grid line structures of at least a portion of main grid line 3 on the above N-type silicon chip of solar cell surface as can be known, the N-type silicon chip of solar cell that the present embodiment provides, reduced the use of N-type silicon chip of solar cell surface slurry, reduced the production cost of N-type silicon chip of solar cell, increase simultaneously the light-receiving area of N-type solar cell surface, improved the photoelectric conversion efficiency of N-type solar cell.
In order further to optimize technique scheme, in the N-type silicon chip of solar cell that embodiment own provides, grid line group 31 is made of the parallel distribution of many conduction grid lines.Each conduction grid line of grid line group 31 be arranged in parallel, and then when the conducting that realizes the main grid line required, all the length direction with main grid line 3 was identical for the length direction of every conduction grid line.Be combined into grid line group 31 by many conduction grid lines, can finish the transmission of the photo-generated carrier that produces on the 31 pairs of N-type silicon chip of solar cell of grid line group that formed by many conduction grid lines, especially, conduct the grid line group 31 that grid lines form by many, when having guaranteed that even a certain conduction grid line of grid line group 31 disconnects, still can finish propagation function to photo-generated carrier by other conduction grid line on the grid line group 31.Grid line group 3 adopts the mode of many conduction grid lines combination, and then when main grid line 3 was carried out silk screen printing, the consumption of employed slurry reduced, thereby the use amount of having saved slurry has reduced cost.Be parallel to each other between the conduction grid line, then, have certain space between the adjacent conduction grid line, the position that this space exists can increase again the light-receiving area on N-type silicon chip of solar cell surface, has increased to a certain extent the photoelectric conversion efficiency of N-type silicon chip of solar cell.
Concrete, the spacing between the conduction grid line of arbitrary neighborhood all equates.Many the conduction grid line is arranged side by side, and consistent with the length direction of main grid on its arragement direction, and auxiliary grid line and main grid line are the structure of mutual conduction, and then, grid line group 31 is many conduction grid lines and the common fenestral fabric that consists of of auxiliary grid line.The conduction grid line is set to the structure that the spacing between adjacent all equates, on the one hand, equally distributed structure is so that the grid line group is beneficial to the layout that realizes printed patterns in printing process, on the other hand, equidistantly arrange and avoided overlapping phenomenon between the adjacent conduction grid line, can guarantee the light-receiving area of main grid line position maximum.
After being provided with grid line group 31 on the main grid line 3, can so that main grid line 3 when finishing the photo-generated carrier propagation function, reduces the use of slurry, increase the light-receiving area on N-type silicon chip of solar cell surface.In order to reach with the printing of less slurry realization to main grid line 3, light-receiving area with the increase N-type silicon chip of solar cell surface of maximum, main grid line 3 is set to be made of many conduction grid lines, also can be understood as, main grid line 3 is by forming after the series connection of the grid line group of a plurality of parts, can be set to dislocation between the adjacent grid line group 31 and connect, and also can be set to main grid line 3 and conduct grid lines by many and arrange side by side and form, after carrying out conducting by auxiliary grid line with it, consist of straight-through latticed grid line group.
As shown in Figure 4, the structural representation of the N-type silicon chip of solar cell with solid part and hollow-out parts that provides for the utility model of Fig. 4.
In order further to optimize technique scheme, in the N-type silicon chip of solar cell that embodiment own provides, grid line group 31 comprises solid part 43 and hollow-out parts 41, and hollow-out parts 41 and solid part 43 distribute successively along the length direction of main grid line 4.For guarantee main grid line 4 can finish photo-generated carrier transmitted in, guarantee the safety in utilization of the structure of main grid line 4, hollow-out parts 41 and solid part 43 are arranged in order on the length direction that is arranged on main grid line 4, hollow-out parts 41 can reduce the slurry use amount of main grid line 4 in screen printing process, and the structure of solid part 43 can guarantee again the safety of structure of whole piece main grid line 4.Especially, hollow-out parts 41 is arranged at the position that is not easy to produce wearing and tearing or scuffing on the N-type silicon chip of solar cell main grid line 4, this position can be determined according to the concrete operating position of N-type silicon chip of solar cell, then, this kind method to set up can further guarantee the safe application performance of N-type silicon chip of solar cell.
Particularly, hollow-out parts 41 is made of the parallel distribution of many connection grid lines.Each of hollow-out parts 41 connects grid line and be arranged in parallel, and then when the conducting that realizes main grid line 4 required, the length direction that connects grid line was identical with the length direction of main grid line 4.Two spacings that connect between the grid line of arbitrary neighborhood all equate.The length direction that connects grid line is identical with the length direction of main grid line 4, all there is main grid line 4 to discharge external circuit after the transmission of photo-generated carrier through connecting grid line that can guarantee to be collected by auxiliary grid line 42, simultaneously also so that form the light-receiving area of opto-electronic conversion between the adjacent connection grid line, improved the effective area of shining light of N-type solar cell; The arrangement mode of the connection grid line that spacing equates so that printed patterns is easy to design, has been avoided adjacent overlapping between the grid line of more closely connecting simultaneously.
In order further to optimize technique scheme, in the N-type silicon chip of solar cell that embodiment own provides, main grid line 4 comprises a plurality of grid line groups, namely comprises a plurality of solid part of arranging successively 43 and hollow-out parts 41, and the two ends of main grid line 4 consist of by solid grid line.A plurality of solid part 43 and hollow-out parts 41 are arranged in the position at main grid line place successively, two end points of main grid line 4 consist of by solid grid line simultaneously, the hollow-out parts 41 interspersed centre positions that are arranged on main grid line 4, adopt this kind design when guaranteeing that reducing slurry uses the reduction cost, also realize increasing the light-receiving area of silicon chip surface, improved the function of opto-electronic conversion.And two ends of main grid line 4 need to be connected with external circuit, adopt the structure of solid grid line after, it can effectively guarantee main grid line 4 and the outside steadiness that is connected, has guaranteed the fail safe of N-type silicon chip of solar cell use.
Based on the N-type silicon chip of solar cell that provides in above-described embodiment, the utility model also provides a kind of N-type solar module, comprise terminal box and the N-type silicon chip of solar cell that is attached thereto, the N-type silicon chip of solar cell of this N-type silicon chip of solar cell for providing in above-described embodiment.
Because this N-type silicon chip of solar cell assembly has adopted the N-type silicon chip of solar cell of above-described embodiment, so this N-type solar module please refer to above-described embodiment by the beneficial effect that the N-type silicon chip of solar cell brings.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from spirit or scope of the present utility model, in other embodiments realization.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. N-type silicon chip of solar cell, be provided with on it main grid line and with many auxiliary grid lines that described main grid line is conducted, it is characterized in that at least a portion many grid line groups that the conduction grid line consists of of serving as reasons on the described main grid line.
2. N-type silicon chip of solar cell according to claim 1 is characterized in that, the parallel distribution of many described conduction grid lines.
3. N-type silicon chip of solar cell according to claim 2 is characterized in that, the spacing between any adjacent two described conduction grid lines all equates.
4. N-type silicon chip of solar cell according to claim 3 is characterized in that, described main grid line is made of many described conduction grid lines.
5. N-type silicon chip of solar cell according to claim 1 is characterized in that, described grid line group comprises solid part and hollow-out parts, and described hollow-out parts and described solid part distribute successively along the length direction of described main grid line.
6. N-type silicon chip of solar cell according to claim 5 is characterized in that, described hollow-out parts consists of after connecting the parallel distribution of grid line by many.
7. N-type silicon chip of solar cell according to claim 6 is characterized in that, the spacing between any adjacent two described connection grid lines all equates.
8. N-type silicon chip of solar cell according to claim 7 is characterized in that, described main grid line forms after being connected successively by a plurality of described grid line groups.
9. the described N-type silicon chip of solar cell of any one is characterized in that according to claim 1-8, and two ends of described main grid line all are set to solid grid line.
10. a N-type solar module comprises terminal box and the N-type silicon chip of solar cell that is attached thereto, and it is characterized in that, described N-type silicon chip of solar cell is such as the described N-type silicon chip of solar cell of right 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220160711 CN202749377U (en) | 2012-04-16 | 2012-04-16 | N-type solar cell module and N-type solar cell silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220160711 CN202749377U (en) | 2012-04-16 | 2012-04-16 | N-type solar cell module and N-type solar cell silicon wafer |
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| CN202749377U true CN202749377U (en) | 2013-02-20 |
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| CN 201220160711 Expired - Lifetime CN202749377U (en) | 2012-04-16 | 2012-04-16 | N-type solar cell module and N-type solar cell silicon wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208539A (en) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | Schmid paraffin mask fine grid structure |
| CN103943698A (en) * | 2014-04-21 | 2014-07-23 | 衡水英利新能源有限公司 | Photovoltaic module with main grid lines arranged side by side |
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| CN112670355A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | Bifacial solar cell and method for producing the same |
| CN113013281A (en) * | 2019-12-20 | 2021-06-22 | 苏州阿特斯阳光电力科技有限公司 | Battery piece, alignment method thereof and photovoltaic module |
-
2012
- 2012-04-16 CN CN 201220160711 patent/CN202749377U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208539A (en) * | 2013-03-22 | 2013-07-17 | 江苏荣马新能源有限公司 | Schmid paraffin mask fine grid structure |
| CN103943698A (en) * | 2014-04-21 | 2014-07-23 | 衡水英利新能源有限公司 | Photovoltaic module with main grid lines arranged side by side |
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| CN112670355A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | Bifacial solar cell and method for producing the same |
| CN112670355B (en) * | 2019-10-15 | 2024-06-11 | 浙江爱旭太阳能科技有限公司 | Double-sided solar cell and production method thereof |
| CN113013281A (en) * | 2019-12-20 | 2021-06-22 | 苏州阿特斯阳光电力科技有限公司 | Battery piece, alignment method thereof and photovoltaic module |
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Granted publication date: 20130220 |