CN108538948A - Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle - Google Patents
Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle Download PDFInfo
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- CN108538948A CN108538948A CN201810614394.8A CN201810614394A CN108538948A CN 108538948 A CN108538948 A CN 108538948A CN 201810614394 A CN201810614394 A CN 201810614394A CN 108538948 A CN108538948 A CN 108538948A
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- 239000003292 glue Substances 0.000 claims abstract description 20
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 16
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- 229910052709 silver Inorganic materials 0.000 description 25
- 239000004332 silver Substances 0.000 description 25
- 238000003466 welding Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 238000001465 metallisation Methods 0.000 description 13
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- 238000003475 lamination Methods 0.000 description 9
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- 238000010586 diagram Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
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- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of solar cell grid line structure of present invention offer, solar battery sheet and solar energy stacked wafer moudle, grid line structure include several secondary grid lines being set on silicon chip, the main gate line vertical with secondary grid line；The main gate line is made of latticed porous structure, and when coating conducting resinl in main gate line, partially electronically conductive glue is filled in grid hole.Since composition conducting resinl and the material of main gate line all have good conductivity, when above-mentioned grid lines is intensive enough, replaces solid object that can't be generated to component electrical property using lattice-like pattern and seriously affect.The deformation of conducting resinl, and silicon nitride covering cell piece matte on diffusion due to being limited by main gate line grid pattern, be limited within grid pattern, so as to avoid the generation of excessive glue and strike-through.
Description
Technical field
The invention belongs to area of solar cell, more particularly to a kind of solar cell grid line structure, solar battery sheet
And solar energy stacked wafer moudle.
Background technology
Solar cell is a kind of device that luminous energy is converted into direct current using photovoltaic effect.According to photoelectricity
The difference of transition material, solar cell include monocrystalline silicon, polysilicon, amorphous silicon membrane, Cadimium telluride thin film, and copper and indium gallium tin is thin
Film, GaAs, fuel sensitization, perovskite, multiple types such as lamination.One of the most common is crystal silicon solar energy battery, including
Monocrystaline silicon solar cell and polysilicon solar cell.Solar cell is usually sheet, can absorb luminous energy and by its turn
Turn to electric energy is referred to as extinction face or front on one side, is in addition referred to as the back side on one side.For part solar cell, the back side
It is electric energy that can also absorb and convert luminous energy, these solar cells are referred to as double-side cell.
The electrode pattern of crystal silicon solar cell sheet front and back, by the side that solar cell surface metallizes
It is prepared by method.Common method for metallising is to be printed on the electrocondution slurry containing Argent grain in such a way that silk-screen printing adds sintering
Battery surface, by the halftone graphic designs for changing silk-screen printing, thus it is possible to vary electrode pattern.
Crystal silicon solar energy battery is other than electrode zone, and front is usually silicon nitride film, and the back side is usually silk-screen printing
Aluminum slurry and through oversintering formed Al-BSF.Light can be absorbed for some special solar cells, such as positive and negative
Two-sided P-type silicon PERC batteries or two-sided N-type silicon PERT batteries, the region surface other than backplate and the thin grid line of metallizing
It is also silicon nitride film.For two-sided HJT batteries, i.e. hetero-junction solar cell, the electrode of front and back and the region other than grid line
Surface is transparent conductive oxide film, such as tin indium oxide ITO.
By multiple solar cell electricity interlinkage post packages in glass or organic polymer, what is obtained can be used for a long time
Photovoltaic apparatus, be referred to as photovoltaic module.Cell piece mutual contact mode in Crystalline Silicon PV Module, common are cell piece
It is ranked sequentially, using the tin-coated welding strip containing Copper base material as interconnecting strip, the front that interconnecting strip one end is welded on first cell piece is main
On grid line, the interconnecting strip other end is welded in the backplate of second adjacent cell piece.The both ends of second interconnecting strip point
It is not welded in the front main grid line of second cell piece and the back side grid line of third piece cell piece, and so on.Thus by institute
Some cell pieces are connected into a string.
The technology that stacked wafer moudle is interconnected using another cell piece.As shown in Figure 1, same solar cell is just
The main grid line electrode in face and the back of the body silver electrode at the back side are located at the left and right sides of the battery, by the side of solar battery sheet first
It is placed in the lower section of another cell piece second, the positive main grid line electrode in the cell piece first side and the electrode at the second back side is made to overlap.
Conductive material formation is used to be conductively connected between two electrodes.At the same time, the other side of cell piece second is placed in cell piece
Third lower section so that the positive main grid line electrode in the second other side and the electrode at third back side overlap, and adopt between two electrodes
It is conductively connected with conductive material formation.After the same method, M piece cell pieces can be sequentially interconnected in form battery strings (5≤M
≤120)。
Lamination mutual contact mode may also used to form interconnection (5≤M≤120) between M piece solar cells are sliced.Mutually
Battery solar cell slice after connection refers to by machinery, laser or other modes by a piece of complete or incomplete sun
The small pieces that energy battery is cut into.The shape of solar cell slice can be polygon shaped like rectangle, triangle, curvilinear figure such as circle
Shape, fan-shaped, ellipse or irregular figure.The number of sections that a piece of solar cell can be cut into is K pieces, wherein 1≤K
≤20。
For the solar battery sheet of square or rectangle, shape can be cut to, K rectangle of size all same is cut
Piece, wherein 1≤K≤20.
For the quasi- rectangle solar battery sheet with chamfering, it can be cut into K pieces slice battery, wherein 1≤K≤
20, and some slice batteries are the quasi- rectangle for having 1 or 2 chamfering, some is sliced battery as the rectangle of no chamfering.Such as Fig. 2 is
Solar battery sheet is cut into a kind of modes of five slice batteries, the slice battery of the leftmost side and the rightmost side carries chamfering, in
Between three slice batteries there is no chamfering.
Conductive material in stacked wafer moudle in same battery strings between adjacent cell plate electrode includes conducting resinl, conducting resinl
The materials such as band, welding or tin cream.According to the characteristic of conductive material, corresponding preparation method should be selected.For using conducting resinl shape
At the battery strings of electricity interlinkage, the method that dispensing or silk-screen printing may be used.
The main component of conducting resinl includes resin material matrix and conductive filler.Filler therein is typically silver or argentiferous
Particle.Compared with commonly applying tin copper strips, conducting resinl can not only connect at good mechanical adhering force with conductive with silver electrode
The conducting resinl for connecing, while having can also form good viscous with other surfaces of cell piece, such as silicon nitride film layer or silicon materials
It connects.
Since silver is a kind of noble metal, the cost of solar cell size and conducting resinl containing silver is all relatively more high
It is expensive.For example various carbon materials of cheap metal material such as copper, aluminium, nickel or non-metallic conducting material, tin indium oxide etc. may be used
The silver in slurry or conducting resinl is substituted, it can also be by changing the design of battery surface metal pattern or the design of conductive paste pattern
Carry out the corresponding usage amount for reducing silver paste or conducting resinl.
If lamination process control is improper, excessive glue or strike-through phenomenon will produce.Excessive glue refers to the matrix and filler of conducting resinl
The lap of two panels cell piece has all been overflowed, strike-through refers to that the matrix of conducting resinl has oozed out the lap of two panels cell piece,
And filler does not have.Excessive glue and strike-through can influence the long-term reliability of stacked wafer moudle, should avoid in actual production.
As shown in figure 3, photovoltaic laminate component can be divided into two kinds of horizontal version type and portrait type according to the orientation of battery strings.
The battery strings referred to as horizontal version type stacked wafer moudle parallel with component short side, the battery strings referred to as portrait type lamination parallel with component long side
Component.
A kind of circuit diagram of stacked wafer moudle using 2 parallel diodes is as shown in figure 4, multiple laminated batteries connection in series-parallel shapes
At battery strings group, each battery strings group is in parallel with 1 bypass diode, and 2 such battery strings groups are connected into as component.Using
Portrait type may be used in the stacked wafer moudle of this circuit, can also use horizontal version type.
It is sliced using two-sided laminated batteries or two-sided laminated batteries, the two-sided PERC laminated batteries of P-type silicon as previously mentioned,
The two-sided PERT laminated batteries of N-type silicon or HJT laminated batteries can obtain two-sided stacked wafer moudle by lamination process above-mentioned.
In stacked wafer moudle, it is divided into N number of long battery strings (N >=1) from left to right.Such as the portrait type Double-side laminated in Fig. 3
Piece component contains 6 long battery strings altogether, is denoted as string A, B, C, D, E, F respectively.
In stacked wafer moudle, every welding positioned at the positive and negative extreme multiple battery strings of connection of component, referred to as busbar；It is all
It is to be located at component intermediate potential, and connect the welding of multiple battery strings, welding referred to as in parallel；It is every to be connected with welding in parallel, it walks
To being parallel to battery strings, and the welding of bypass diode is connected, referred to as bypasses welding.
Fig. 5 is a kind of front and back metallization pattern of single side laminated batteries.Front description includes 5 solid continuous
Main gate line and perpendicular several secondary grid lines, the figure at the back side are 5 solid continuous back electrodes and between back electrode
Back surface field.Main gate line and secondary grid line in front description are made of the slurry containing silver, and the back electrode in the figure of the back side is by containing
There is the slurry of silver to constitute, back surface field is made of the slurry containing aluminium.Above-mentioned positive silver paste, back silver paste, aluminum slurry are all made of silk screen
The mode of printing is produced on the surface of cell piece.
Fig. 6 is a kind of front and back metallization pattern of two-sided laminated batteries.Front description includes 6 solid continuous
Front main grid line and perpendicular several secondary grid lines, the figure at the back side includes 6 solid continuous back side main gate lines, with main grid
Line parallel and adjacent to a secondary grid line and perpendicular several secondary grid lines.Main gate line in front description and secondary grid line
It is made of the slurry containing silver, the main gate line in the figure of the back side is made of the slurry containing silver, and secondary grid line is by the slurry containing aluminium
Material is constituted.The mode that above-mentioned silver paste and aluminum slurry are all made of silk-screen printing is produced on the surface of cell piece.
There are two disadvantages for the prior art.(1) consumption of silver paste is more, causes battery cost higher.(2) part is planted
The conducting resinl of class, there are excessive glue or strike-through risks.Details are as follows.
Due in prior art front main grid line and back side main gate line all use Filled Rectangle design, silver paste
Consumption is relatively more.Silver paste is the prime cost source of battery production link, and high silver paste consumption can directly result in the increase of battery cost.
In the production process of stacked wafer moudle, when upper and lower two panels cell piece is overlapped, between two panels cell piece
Conducting resinl since by upper and lower extruding, possible production capacity deformation causes conductive paste pattern to broaden, as shown in Figure 7.Broadening degree
It is related with the type of conducting resinl and cell piece surface characteristic.There are some conducting resinls on the matte that the silicon nitride of cell piece covers
With the more wetabilitys and diffusion rate higher than on metal paste.For this partially electronically conductive glue, need to limit itself and nitridation
The contact of silicon, otherwise its part contacted with silicon nitride can obviously extend to the outside, if it is overlapped to have exceeded two cell pieces
Part, just will produce excessive glue or strike-through.
Excessive glue or strike-through in order to prevent need main gate line doing width, to ensure that conducting resinl is only contacted with main gate line.But in this way
The consumption and battery cost of silver paste can be further increased.
Invention content
The present invention is intended to provide a kind of solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle, it should
Battery grid line structure is a kind of laminated batteries metallization pattern scheme with low cost and adhesive-spill-preventing or strike-through characteristic, the structure
Corresponding conductive paste pattern can be effectively prevented excessive glue or strike-through, need not main gate line be done width, ensure that and lead
Electric glue is contacted with main gate line, while also reducing the consumption and battery cost of silver paste.
To achieve the above object, technical solution of the invention is：
A kind of solar cell grid line structure, including be set on silicon chip several secondary grid lines, the master vertical with pair grid line
Grid line；The main gate line is made of latticed porous structure, and when coating conducting resinl in main gate line, partially electronically conductive glue is filled in grid
In the grid hole of shape porous structure；The main gate line is continous way or segmentation structure.
The latticed porous structure is intersected by a plurality of filament, and filament includes straight line, broken line and curve
One or more of be arbitrarily composed.
The characteristic length in the hole in the latticed porous structure is 10 microns to 2000 microns, entire main grid line width
It is 100 to 1500 microns.
The width of the filament is 5 microns to 1500 microns, and height is 5 microns to 100 microns,
The filament includes longitudinal filament and lateral filament.
The latticed porous structure of the main gate line is in the following, be provided with metal layer or non-metallic layer, metal layer or non-gold
Belong to layer to be in contact with the silicon nitride passivation on cell piece surface such as silicon nitride or other oxide layers；The thickness of metal layer or non-metallic layer
Degree is between 0.002 micron to 100 microns.
The passivation layer or oxide etch of the silicon chip surface form notch, and the latticed porous structure of main gate line passes through
Notch and silicon chip substrate contact.
In the segmentation structure of the main gate line, the length of each segmented electrode is 80 microns to 150 millimeters, every master
The quantity of segmented electrode is 2~240 on grid line.
A kind of solar battery sheet, the front and/or the back side of solar battery sheet use described in above-mentioned any one too
Positive energy battery grid line structure.
A kind of solar energy stacked wafer moudle, stacked wafer moudle are made of the solar battery sheet.
The beneficial effects of the invention are as follows：
The solar cell grid line structure of the present invention is by using the main gate line for intersecting grid configuration, instead of existing scheme
In solid main gate line.Since all there is good conductivity, above-mentioned grid to hand over for composition conducting resinl and the material of main gate line
When cross wires is intensive enough, replace solid object that can't be seriously affected to the generation of component electrical property using grid is intersected.Conducting resinl
Deformation, and silicon nitride covering matte on diffusion due to being limited by main grid line graph, be limited in grid chart
Within shape, so as to avoid the generation of excessive glue and strike-through.
Further, if having porous structure, the deformation of conducting resinl and silicon nitride covering matte on diffusion by
To the limitation of porous structure, the generation of excessive glue and strike-through can be avoided.
Further, main gate line is made of two layer materials, and primer is solid metallic materials or nonmetallic materials, top layer material
Material is above-mentioned intersection grid, due to intersecting the silicon nitride matte of the cell piece in grid by the metal layer or non-metallic layer of bottom
Covering, prevents the contact of conducting resinl and silicon nitride matte, thus with being oozed than preparing the better adhesive-spill-preventing of intersection grid merely
Glue effect.
Further, the passivation layer of main grid line position such as silicon nitride or oxide layer such as silica are removed, then prepares friendship again
The main gate line for pitching mesh shape can equally obtain adhesive-spill-preventing strike-through effect more better than use intersection grid merely, make simultaneously
Metal paste dosage needed for standby main gate line is not higher than the scheme that intersection grid is used alone.
Further, said program can be combined with the primary gate electrode structure of sectional design, can further decrease system
The metal paste usage amount of standby electrode main grid,
Description of the drawings
Fig. 1：The lamination mutual contact mode of cell piece；
Fig. 2：Battery (left side) with chamfering is cut into 5 battery slices (right side)；
Fig. 3：Horizontal version type (left side) and portrait type (right side) stacked wafer moudle；
Fig. 4：Stacked wafer moudle circuit diagram with 2 diodes；
Fig. 5：A kind of front and back metallization scheme figure of single side laminated batteries；
Fig. 6：A kind of front and back metallization scheme figure of two-sided laminated batteries；
Fig. 7：The variation of conducting resinl thickness and width before and after lamination process；
Fig. 8：Grid main gate line schematic diagram-front view；A is the structural schematic diagram of secondary grid line and main gate line, and b is several frequently seen
Grid main gate line structural schematic diagram；
Fig. 9：Grid main gate line schematic diagram-side view；
Figure 10：Inhibition of the grid main gate line to excessive glue；
Figure 11：Grid main gate line schematic diagram with metal layer；
Figure 12：Grid main gate line schematic diagram with non-metallic layer；
Figure 13：The solar cell metallization pattern partial schematic diagram being made of multistage main gate line 2 and secondary grid line；
Figure 14：A kind of conductive paste pattern corresponding with cell piece metallization pattern in Figure 13；
Figure 15：A kind of single side stacked wafer moudle using the solar cell with above-mentioned metallization pattern；
Figure 16：A kind of two-sided stacked wafer moudle using the solar cell with above-mentioned metallization pattern.Terminal box in figure
The position of installation bypasses welding and busbar lead-out wire is pierced by from glass trepanning at dashed rectangle.
Wherein：1- pair grid lines, 2- main gate lines, 3- back of the body main gate lines, 4- Al-BSFs, the secondary grid line of the 5- back ofs the body, 6- conducting resinls, 7- are thin
Line, the longitudinal directions 8- filament (perpendicular to secondary grid line), 9- transverse directions filament (are parallel to secondary grid line), 10- metal layers, 11- non-metallic layers,
12- busbars, 13- weldings, 14- bypass welding, 15- parallel connection weldings, 16- terminal boxes, 17- backplates.
Specific implementation mode
The technology of the present invention is described in detail below in conjunction with the accompanying drawings：
The present invention cell metallization graphic scheme as shown in figure 8, include using intersect grid configuration main gate line 2, with
And pair grid line 1.Main gate line 2 by the reticular structure that forms of filament 7 staggeredly, filament 7 be one kind in straight line, broken line and curve or
Person's multiple combinations；Groove is formed in the grid of reticular structure, when coating conducting resinl 6 in main gate line 2, partially electronically conductive glue 6 is filled in
In the groove of grid.
As shown in Fig. 8 (b), the filament 7 of main gate line 2 can be straight line, broken line or curve composition.The width range of filament 7
Section is 5 microns to 1500 microns, and the altitude range section of filament 7 is 5 microns to 100 microns, the characteristic length model of grid hole
It is 10 microns to 2000 microns to enclose section, and the width range in 2 region of entire main gate line is 100 to 1500 microns.The shape of grid
Can be polygon (being made of H side, 3≤H≤100), circle, ellipse or other shapes.Main gate line 2 can be with cell piece
Sides aligned parallel, vertical or at any angle.
Preferably intersected the grid pore structure formed by a plurality of longitudinal filament 8 and lateral filament 9.(below with grid
The main gate line 2 of shape illustrates.) F root pairs grid line 1 and grid main gate line 2 intersect vertically (20≤F≤200).
The width and constant height of same root main gate line 2 can also change in above-mentioned width and altitude range.With a piece of
The width and height of the different main gate lines 2 of battery may be the same or different.With on a piece of battery between different main gate lines 2
It, can not also be identical away from can be identical.As shown in figure 9, spacing between the lateral filament 9 parallel with secondary grid line and with secondary grid line
Spacing between vertical longitudinal filament 8 can be identical, can not also be identical.It, can be with the main gate line for intersecting grid pattern
By silk-screen printing, valve type dispensing is sprayed in the printing processes such as mould printing, screw dispensing, the dispensing methods such as vapour-pressure type dispensing, with
And prepared by plating, directly the methods of laying.
Since composition conducting resinl and the material of main gate line all have good conductivity, above-mentioned Box junction line enough
When intensive, replace solid object that can't be seriously affected to the generation of component electrical property using grid is intersected.
As shown in Figure 10, the deformation of conducting resinl 6, and silicon nitride covering matte on diffusion due to by main gate line
The limitation of 2 figures, is limited within grid pattern, so as to avoid the generation of excessive glue and strike-through.
Another scheme has than one better adhesive-spill-preventing strike-through effect of said program.Method is secondary using main gate line
The method of preparation prepares the metal pulp bed of material with solid pattern, abbreviation metal layer 10, metal layer in the position of main gate line first
Height is between 0.002 micron to 100 microns.Then intersection grid above-mentioned is prepared in solid metal layer, as shown in figure 11.
In this scenario, since the matte for intersecting the silicon nitride covering in grid is also covered by first layer metal layer 10, compare scheme
One has better adhesive-spill-preventing strike-through effect.Disadvantage is that the consumption side of could possibly be higher than of secondary preparation process and silver paste
Case one.It can be by reducing the metal layer thickness prepared for the first time, or the height or close of second of main gate line 2 prepared of reduction
Collection degree reduces the consumption of silver paste.Figure preparation method in the program is right other than the several method mentioned in addition to scheme is a kind of
In first layer metal layer, other methods such as chemical meteorology deposition, sol-gal process, the methods of vapor deposition or sputtering system can also be passed through
It is standby.Material therefor can be other metal or alloy materials in addition to silver.
Another scheme is using non-metallic layer 11 made of non-metallic conducting material, such as graphene, tin indium oxide
Deng or semi-conducting material such as non-crystalline silicon (thickness does not require) or insulating materials (thickness requirement than relatively thin, accordingly even when cannot
Conduction, it is conductive that charge can pass through non-metallic layer to carry out) such as silica prepares the solid main grid line pattern of first layer, thickness range
At 0.002 micron to 100 microns, intersection network is then prepared on this pattern, as shown in figure 12.
Another scheme is using the method physically or chemically etched, by the passivation layer of main grid line position such as silicon nitride
Or the removings such as oxide layer such as silica, aluminium oxide form notch, then prepare the main gate line for intersecting mesh shape again.Main gate line 2
Latticed porous structure pass through notch and silicon chip substrate contact.
For above-mentioned four kinds of main gate line graphic schemes, it can be superimposed segmented main gate line scheme simultaneously, as shown in figure 13, point
For the length range of segment electrode between 80 microns to 150 millimeters, the quantitative range of the segmented electrode in the same extension line is 2 to arrive
240, the length being respectively segmented may be the same or different.
Above-mentioned four kinds of graphic schemes and segmented main grid scheme, the main grid line graph in addition to can be used for battery front side,
It can be used for the silver electrode figure of single side cell backside or the main grid line graph of two-sided lamination cell backside.
Above-mentioned various schemes may be incorporated for chamfering or the cell piece without chamfering.
Above-mentioned various schemes are suitable for various monocrystaline silicon solar cells, polysilicon solar cell, P-type crystal silicon
PERC batteries, N-type crystalline silicon PERT batteries, hetero-junction solar cell, TOPCON batteries, back contact battery.
A kind of conductive paste pattern scheme corresponding with above-mentioned cell metallization graphic scheme is as shown in figure 14.Print can be passed through
The modes such as brush or dispensing are prepared in the main gate line of battery front side or in the silver electrode or main gate line of cell backside.
The single side stacked wafer moudle that a kind of single side laminated batteries using above-mentioned cell metallization figure make is as shown in figure 15.
The two-sided stacked wafer moudle that a kind of two-sided laminated batteries using above-mentioned cell metallization figure make is as shown in figure 16.In stack of laminations
In part, it is divided into N number of long battery strings (N >=1) from left to right.The two-sided stacked wafer moudle of portrait type contains 6 long battery strings altogether, respectively
It is denoted as string A, B, C, D, E, F.In stacked wafer moudle, every welding positioned at the positive and negative extreme multiple battery strings of connection of component claims
For busbar 12；It is every to be located at component intermediate potential, and the welding of multiple battery strings is connected, welding 14 referred to as in parallel；It is every with
Welding in parallel is connected, and trend is parallel to battery strings, and connects the welding of bypass diode, referred to as bypasses welding 15.
In addition, the above embodiment of the present invention is embodiment, there is the technological thought with claims of the present invention
It is allowed to identical method and plays the technical solution of identical function and effect, be all contained in the present invention.
Claims (10)
1. a kind of solar cell grid line structure, which is characterized in that including several secondary grid lines (1) and the pair being set on silicon chip
The vertical main gate line (2) of grid line (1)；The main gate line (2) is made of latticed porous structure, is coated in main gate line (2) conductive
When glue (6), partially electronically conductive glue (6) is filled in the grid hole of latticed porous structure；The main gate line (2) be continous way or
Segmentation structure.
2. a kind of solar cell grid line structure according to claim 1, which is characterized in that the latticed porous knot
Structure is intersected by a plurality of filament (7), and filament (7) includes that one or more of straight line, broken line and curve are arbitrary
It is composed.
3. a kind of solar cell grid line structure according to claim 1, which is characterized in that the latticed porous knot
The characteristic length in the hole in structure is 10 microns to 2000 microns, and entire main gate line (2) width is 100 to 1500 microns.
4. a kind of solar cell grid line structure according to claim 2, which is characterized in that the width of the filament (7)
Degree is 5 microns to 1500 microns, and height is 5 microns to 100 microns.
5. a kind of solar cell grid line structure according to claim 2, which is characterized in that the filament (7) includes
Longitudinal filament (8) and lateral filament (9).
6. a kind of solar cell grid line structure according to claim 1, which is characterized in that the main gate line (2)
Latticed porous structure in the following, be provided with metal layer (10) or non-metallic layer (11), metal layer (10) or non-metallic layer (11) with
The passivation layer or oxide layer on cell piece surface are in contact；The thickness of metal layer (10) or non-metallic layer (11) is arrived at 0.002 micron
Between 100 microns.
7. a kind of solar battery sheet grid line structure according to claim 1, which is characterized in that the silicon chip surface
Passivation layer or oxide etch form notch, and the latticed porous structure of main gate line (2) passes through notch and silicon chip substrate contact.
8. according to a kind of solar cell grid line structure described in claim 1 to 7, which is characterized in that the main gate line (2)
Segmentation structure in, the length of each segmented electrode is 80 microns to 150 millimeters, segmented electrode on every main gate line (2)
Quantity is 2~240.
9. a kind of solar battery sheet, which is characterized in that the front and/or the back side of solar battery sheet use claim 1 to 8
Solar cell grid line structure described in any one.
10. a kind of solar energy stacked wafer moudle, which is characterized in that stacked wafer moudle is using the solar battery sheet described in claim 9
It is made.
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| CN114093956A (en) * | 2021-11-03 | 2022-02-25 | 通威太阳能（合肥）有限公司 | Grid line glue printing quality detection method |
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Application publication date: 20180914 |