CN202616229U - Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device - Google Patents
Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device Download PDFInfo
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- CN202616229U CN202616229U CN 201220287341 CN201220287341U CN202616229U CN 202616229 U CN202616229 U CN 202616229U CN 201220287341 CN201220287341 CN 201220287341 CN 201220287341 U CN201220287341 U CN 201220287341U CN 202616229 U CN202616229 U CN 202616229U
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- silicon nitride
- nitride ceramic
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- igbt
- bronze medal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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Abstract
The utility model discloses a liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device, comprising a silicon nitride ceramic base plate, a chip and an insulating bracket. The silicon nitride ceramic base plate comprises a second copper layer, a silicon nitride ceramic plate and a first copper layer, the first copper layer is welded on the front surface of the silicon nitride ceramic plate, and the second copper layer is welded on the back surface of the silicon nitride ceramic plate; the upper end of the insulating bracket is provided with a control and drive plate, and the silicon nitride ceramic plate, the insulating bracket and the control and drive plate form a sealed cavity jointly; and the back surface of the silicon nitride ceramic plate is provided with a radiator. For the liquid-cooling IGBT converter device, the silicon nitride ceramic plate is directly used as the base plate, so that the technological process is simplified, and the cost is reduced.
Description
Technical field
The utility model relates to power device, particularly a kind of IGBT convertor assembly of liquid cooling.
Background technology
The power device that is the basis with insulated gate bipolar transistor (IGBT) is the core of high-power current converting device.Usually the high-power IGBT device is welded together through the multilayer scolder by metal base plate, ceramic copper-clad base plate and power chip.Metal base plate is used the fine copper base plate always, and it is not only the main path of power device heat radiation, and is the basis of this high power device of mechanical fixation.Because heat finally must take away from spreader surface, therefore must the coated with thermally conductive silicone grease between base plate and radiator installed surface with the reduction thermal resistance.When the output current increase of IGBT device, the heat of its dissipation also rises thereupon, for the junction temperature that keeps chip IGBT is worked in the safety operation area, and the base areas of high-power IGBT device must design enough greatly.So, it is quite big that the volume and weight of entire I GBT convertor assembly also becomes, and to the density of further raising power device, reduces size and caused no small challenge.
If adopt the base plate that possesses liquid cooled, the radiating condition of high-power IGBT device can improve significantly so.This is that for example the coefficient of heat conduction of water will exceed several magnitude than the coefficient of heat conduction of air owing to liquid.The heat that power chip produced can be taken away rapidly through liquid circulation.In this case, radiator can become the part of base plate, has omitted the heat-conducting silicone grease layer.And heat sink size can greatly reduce than air radiator, and this has created condition for entire I GBT convertor assembly reduces volume.But, because adding radiator, the base plate of high-power IGBT device still must use pure copper material, the weight of device reduces limited.
In order to improve the electric current fan-out capability, the lead terminal of high-power IGBT device is connected with the ceramic copper-clad base plate surface lines, must directly lead terminal be welded to the copper laminar surface of ceramic copper-clad base plate usually with the mode of soldering.In order to reduce the thermal stress between the different materials, improve the actual life of lead terminal, these lead terminals must be designed comparatively complicated shape to reduce the stress of weld layer.Therefore, the manufacturing of high-power IGBT device, bonding power chip at first, and power chip is carried out circuit connect, and then carry out the welding of lead terminal.Like this, whole manufacturing process just becomes quite complicated.
Summary of the invention
The purpose of the utility model is to overcome the defective of prior art; A kind of new high-power IGBT convertor assembly is proposed; Compare with traditional high-power IGBT convertor assembly, the utility model IGBT convertor assembly tool is small, in light weight, and the advantage of bigger electric current fan-out capability is arranged.
The technical scheme that realizes the utility model purpose is: a kind of IGBT convertor assembly of liquid cooling; Comprise silicon nitride ceramic substrate, chip and insulating support; Said silicon nitride ceramic substrate comprises the second bronze medal layer, silicon nitride ceramic plate and the first bronze medal layer; The said first bronze medal layer is welded on the front of silicon nitride ceramic plate, and the said second bronze medal layer is welded on the back side of silicon nitride ceramic plate; Be provided with control and drive plate in the insulating support upper end, silicon nitride ceramic substrate, insulating support and control and drive plate form annular seal space jointly; The said silicon nitride ceramic substrate back side is provided with radiator.
The utility model has been removed the copper base plate of conventional I GBT device, adopts silicon nitride (Si
3N
4) ceramic wafer is as substrate, substrate thickness is preferably between 1 millimeter to 3 millimeters.Silicon nitride ceramics is a kind of high tenacity material, and its fracture toughness is more than 1.5 times of aluminium oxide ceramics, sees shown in the table 1.Aluminium oxide ceramics is a common used material of making ceramic copper-clad base plate, but its thermal conductivity is minimum.Though the thermal conductivity of silicon nitride is merely about half of aluminium nitride, its fracture toughness almost is a times of aluminium nitride, and therefore, as backplane applications the time, the ability of the inefficacy that its opposing thermal stress causes is higher.(DBC) compares with the aluminium oxide ceramics copper-clad base plate, and silicon nitride ceramic substrate can allow thicker copper layer, and then increases substantially the electric current fan-out capability of IGBT convertor assembly.
Table 1: Heat Conduction Material characteristic
As the further improvement of the utility model, said first copper layer thickness than the copper bed thickness of existing ceramic substrate, strengthens the intensity of substrate and heat conductivility between 1 millimeter to 2 millimeters.Said second copper layer thickness is equally between 1 millimeter to 2 millimeters.Further improvement as the utility model; The said first bronze medal layer at high temperature reacts with silicon nitride through first alloy-layer; Be welded on the front of silicon nitride ceramic plate, the second bronze medal layer at high temperature reacts with silicon nitride through second alloy-layer, is welded on the back side of silicon nitride ceramic plate.Described first alloy-layer and second alloy-layer are Ag-Cu-Ti or Ag-Ni-Ti alloy; Between copper layer and silicon nitride through Ag-Cu-Ti or Ag-Ni-Ti alloy at high temperature with silicon nitride reaction; Form fine and close conversion zone, make copper layer and silicon nitride ceramic plate reach high strength and be connected.Therefore, in the utility model, silicon nitride ceramic substrate is the support of copper layer circuit, makes IGBT, FWD chip form required circuit, and simultaneously, it is heat-conducting layer and High-Voltage Insulation layer; Because its excellent mechanical performance, it still is the superficial layer of liquid cooling annular seal space.
Further improvement as the utility model; The said first bronze medal layer comprises coupling part and extension two parts; Said coupling part is connected with silicon nitride ceramic plate through alloy-layer, and said extension is the extension of coupling part, extends to outside the silicon nitride ceramic plate; The said first bronze medal layer is etched into circuit and power terminal, and power terminal is after upwards spending bending with outside twice 90, on the insulating support surface; The circuit of the first bronze medal layer is provided with igbt chip and FWD chip; Connect through the bonding aluminum steel between said igbt chip, FWD chip and the circuit.In the utility model, power terminal is the part of the first bronze medal layer, is connected with silicon nitride ceramic plate, does not need power terminal and silicon nitride ceramic plate to be welded again, and structure is more simple.
Be provided with installing hole around the said silicon nitride ceramic substrate, said silicon nitride ceramic substrate carries out sealing and fixing through said installing hole and liquid cooling heat radiator.
In the utility model directly with silicon nitride ceramic plate as substrate, and with the part of the first bronze medal layer as power terminal, when insulating support is installed; Bending forms the input and output interface of power terminal; Need not carry out power terminal again, in support and base plate seals, for power terminal and signal terminal provide the installation site to the welding step of covering the copper ceramic substrate; Simplify technological process, reduced cost.
Description of drawings
Fig. 1 is the structural representation of the first positive bronze medal layer of the utility model embodiment ceramic substrate;
Fig. 2 is the structural representation of the second bronze medal layer at the utility model embodiment silicon nitride ceramic substrate back side;
The A-A cutaway view of Fig. 3 Fig. 1;
Fig. 4 is the electrical block diagram behind the welding chip of the utility model embodiment silicon nitride ceramic substrate front;
Fig. 5 is the structural representation behind the positive installation of the utility model embodiment silicon nitride ceramic substrate insulating support;
Fig. 6 is the structural representation behind positive installation and control of the utility model embodiment silicon nitride ceramic substrate and the drive plate;
Fig. 7 is the structural representation after radiator is installed at the utility model embodiment silicon nitride ceramic substrate back side.
Embodiment
Further specify below in conjunction with accompanying drawing and embodiment.
Embodiment 1
Shown in Figure 4 and 5, a kind of IGBT convertor assembly 1 of liquid cooling comprises silicon nitride ceramic substrate 10, chip 5 and insulating support 20.
As shown in Figure 3; Silicon nitride ceramic substrate 10 comprises the second bronze medal layer 12, silicon nitride ceramic plate 13 and the first bronze medal layer 11; The first bronze medal layer 11 is through first alloy-layer 14 and silicon nitride generation pyroreaction; Be welded on the front of silicon nitride ceramic plate 13, the second bronze medal layer 12 is welded on the back side of silicon nitride ceramic plate 13 through second alloy-layer 15 and silicon nitride generation pyroreaction.First alloy-layer 14 and second alloy-layer 15 are Ag-Cu-Ti or Ag-Ni-Ti alloy-layer.
As shown in figures 1 and 3, the first bronze medal layer 11 comprises coupling part 11a and extension 11b two parts, and extension 11b is the extension of coupling part 11a, extends to outside the silicon nitride ceramic plate 10, and extension 11b does not have and silicon nitride ceramic plate 13 welding.The first bronze medal layer 11 is etched into circuit 9 and power terminal 8.Power terminal 8 comprises: the positive input terminal 8a of power section and the sub-8b of negative input end, first, second and the 3rd power take- off 8c, 8d, 8e.
As shown in Figure 2, the second bronze medal layer 12 is etched into 12.
As shown in Figure 4, circuit 9 is provided with igbt chip 5 and FWD chip 6, and igbt chip 5 is connected to brazing mode on the copper sheet of the first bronze medal layer 11 with FWD chip 6, connects through bonding aluminum steel 7 between igbt chip 5, FWD chip 6 and the circuit 9.
As shown in Figure 5, with the insulating support 20 that engineering plastics are made, be fixed on the positive 10a of silicon nitride ceramic substrate, the bridge that is connected with outside bus as power device.Power terminal 8a, 8b, 8c, 8d, 8e are upwards and after the bending of outside twice 90 degree, attached to the input and output interface that forms on the insulating support 20.The lead-in wire in the gate-drive loop of IGBT, by first, second with the 3rd power take- off 8c, 8d, 8e is last draws, be connected on control shown in Figure 6 and the drive plate 40.Control is fixedly connected with insulating support 20 with drive plate 40, thereby entire I GBT convertor assembly is integrally formed.By the inner chamber that the insulating support 20 of electric insulation forms,, igbt chip 5, FWD chip 6 and circuit 9 are done further protection through filling the embedding of silicon gel.
As shown in Figure 6, be provided with control and drive plate 30 in insulating support 20 upper ends, silicon nitride ceramic substrate 10, insulating support 20 and control and the drive plate 30 common annular seal spaces that form; At the back side of silicon nitride ceramic substrate 10, fork-shaped radiator 40 is welded on the second bronze medal layer.
As shown in Figure 7, the back side of silicon nitride ceramic substrate 10 is cooling surfaces of IGBT convertor assembly, and forked type radiator 40 is connected with the second bronze medal layer 12 with brazing mode, and finally is installed in the liquid cooling appts through the installing hole on the silicon nitride ceramic substrate 16.A plurality of split type forked type radiators 40 are arranged on the divided second bronze medal layer 12, can effectively reduce the thermal stress of silicon nitride ceramic substrate, improve the reliability of whole device.
A kind of manufacture process of IGBT convertor assembly of liquid cooling is following:
Step 1 is at silicon nitride (Si
3N
4) front of ceramic wafer welds the first bronze medal layer; The first bronze medal layer comprises coupling part and extension two parts; Said coupling part is connected with silicon nitride ceramic substrate through the pyroreaction welding; Said extension is the extension of coupling part, extend to outside the silicon nitride ceramic substrate, this part with silicon nitride ceramic substrate between be not connected; The second bronze medal layer is welded on silicon nitride (Si through pyroreaction
3N
4) back side of ceramic wafer; Like Fig. 1, Fig. 2 and shown in Figure 3.
Step 2 is etched into circuit and power terminal with the first bronze medal layer, and is as shown in Figure 1.
Step 3 is connected with the pyroreaction brazing mode radiator with the second bronze medal layer of silicon nitride ceramic substrate, as shown in Figure 6.
Step 4 is welded igbt chip and FWD chip on the first bronze medal layer circuit, and the lead-in wire in gate-drive loop.
Step 5 utilizes supersonic bonding that the copper layer on igbt chip, FWD chip and the DBC substrate is connected, and is as shown in Figure 4.
Step 6 is installed insulating support with RTV on silicon nitride ceramic substrate; Power terminal is made progress and the bending of outside twice 90 degree; Make it to be attached to the upper surface of insulating support; Form the interface of the input and output side of power terminal, fill casting glue with the protection internal circuit at the insulating support inner chamber after accomplishing;
Step 7 is at insulating support top installation and control and drive plate, and control and drive plate mechanically are fixed to support, and whole power device is become one; As shown in Figure 5.
Claims (5)
1. the IGBT convertor assembly of a liquid cooling; It is characterized in that; Said IGBT convertor assembly comprises silicon nitride ceramic substrate, chip and insulating support; Said silicon nitride ceramic substrate comprises the second bronze medal layer, silicon nitride ceramic plate and the first bronze medal layer, and the said first bronze medal layer is welded on the front of silicon nitride ceramic plate, and the said second bronze medal layer is welded on the back side of silicon nitride ceramic plate; Be provided with control and drive plate in the insulating support upper end, silicon nitride ceramic substrate, insulating support and control and drive plate form annular seal space jointly; The said silicon nitride ceramic substrate back side is provided with radiator.
2. the IGBT convertor assembly of liquid cooling according to claim 1 is characterized in that, said first copper layer thickness is between 1 millimeter to 2 millimeters, and said second copper layer thickness is between 1 millimeter to 2 millimeters.
3. the IGBT convertor assembly of liquid cooling according to claim 1; It is characterized in that; The said first bronze medal layer at high temperature reacts with silicon nitride through first alloy-layer; Be welded on the front of silicon nitride ceramic plate, the said second bronze medal layer at high temperature reacts with silicon nitride through second alloy-layer, is welded on the back side of silicon nitride ceramic plate; Described first alloy-layer and second alloy-layer are Ag-Cu-Ti or Ag-Ni-Ti alloy.
4. according to the IGBT convertor assembly of claim 1 or 2 or 3 described liquid cooling; It is characterized in that; The said first bronze medal layer comprises coupling part and extension two parts; Said coupling part is connected with silicon nitride ceramic plate through alloy-layer, and said extension is the extension of coupling part, extends to outside the silicon nitride ceramic plate; The said first bronze medal layer is etched into circuit and power terminal, and power terminal is after upwards spending bending with outside twice 90, on the insulating support surface; The circuit of the first bronze medal layer is provided with igbt chip and FWD chip; Connect through the bonding aluminum steel between said igbt chip, FWD chip and the circuit.
5. the IGBT convertor assembly of liquid cooling according to claim 1 is characterized in that, is provided with installing hole around the said silicon nitride ceramic substrate, and said silicon nitride ceramic substrate carries out sealing and fixing through said installing hole and liquid cooling heat radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220287341 CN202616229U (en) | 2012-06-18 | 2012-06-18 | Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220287341 CN202616229U (en) | 2012-06-18 | 2012-06-18 | Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202616229U true CN202616229U (en) | 2012-12-19 |
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ID=47349901
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220287341 Expired - Lifetime CN202616229U (en) | 2012-06-18 | 2012-06-18 | Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202616229U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102710102A (en) * | 2012-06-18 | 2012-10-03 | 南京银茂微电子制造有限公司 | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method |
-
2012
- 2012-06-18 CN CN 201220287341 patent/CN202616229U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102710102A (en) * | 2012-06-18 | 2012-10-03 | 南京银茂微电子制造有限公司 | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121219 |