CN202026277U - Mixer used in radio frequency identification - Google Patents
Mixer used in radio frequency identification Download PDFInfo
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- CN202026277U CN202026277U CN2011201493667U CN201120149366U CN202026277U CN 202026277 U CN202026277 U CN 202026277U CN 2011201493667 U CN2011201493667 U CN 2011201493667U CN 201120149366 U CN201120149366 U CN 201120149366U CN 202026277 U CN202026277 U CN 202026277U
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Abstract
The utility model discloses a mixer used in radio frequency identification. The mixer comprises a tail current source circuit, a transconductance level circuit, a switch level circuit, a harmonic suppression circuit and a load circuit. The mixer is characterized in that a transistor pair for harmonic suppression is additionally arranged at the drain of a transconductance pipe on the basis of a traditional mixer, so that the drain voltage of the transconductance pipe and a circuit flowing through the transconductance pipe are stable relatively, and thus, higher gain and lower noise coefficient are achieved.
Description
Technical field
The present invention relates to a kind of frequency mixer, the frequency mixer in particularly a kind of radio-frequency (RF) identification.
Background technology
In recent years along with the development of Internet technology, to the demands for higher performance of equipment such as hardware and software.Radio frequency identification equipment RFID requires RFID reader and label to have higher performance as the important component part of the Internet too.Frequency mixer is as an important module among the RFID, and its major function is to realize frequency inverted by two signal multiplications, thereby obtains needed intermediate-freuqncy signal or radiofrequency signal.Conversion gain, noise, the linearity etc. are the Key Performance Indicators of frequency mixer, directly affect the performance of rfid system.
Fig. 1 is a kind of circuit structure of common traditional Gilbert frequency mixer, and it is made up of tail current source, transconductance stage circuit, switching stage circuit and load circuit.Wherein, tail current source is used to improve stable electric current, and transconductance stage is used for the radio-frequency voltage conversion of signals is become the radio-frequency current signal, and local oscillation signal is input to switching stage, thereby the Kai Heguan of oxide-semiconductor control transistors obtains needed signal via load at last.The shortcoming of this tradition Gilbert frequency mixer is: gain not high and noise factor is relatively large.
Summary of the invention
The technical problem to be solved in the present invention provides the frequency mixer in a kind of radio-frequency (RF) identification, and it can improve gain and noiseproof feature.
For solving the problems of the technologies described above, the frequency mixer in the radio-frequency (RF) identification of the present invention comprises tail current source circuit, transconductance stage circuit, switching stage circuit and load circuit;
Described frequency mixer comprises that also the harmonic wave of being made up of the 8th nmos pass transistor and the 9th nmos pass transistor suppresses circuit;
Described switching stage circuit comprises the 4th nmos pass transistor (M4), the 5th nmos pass transistor (M5), the 6th nmos pass transistor (M6) and the 7th nmos pass transistor (M7); The grid of described the 4th nmos pass transistor connects the positive input terminal of intrinsic signals, the gate interconnection of described the 5th nmos pass transistor and the 6th nmos pass transistor also connects the negative input end of intrinsic signals, and the grid of described the 7th nmos pass transistor connects the positive input terminal of intrinsic signals; The source electrode of described the 4th nmos pass transistor and the 5th nmos pass transistor connects the drain electrode that grid in the described transconductance stage circuit connects that nmos pass transistor of radiofrequency signal positive input terminal, the source electrode of described the 6th nmos pass transistor and the 7th nmos pass transistor connects the drain electrode that grid in the described transconductance stage circuit connects that nmos pass transistor of radiofrequency signal negative input end, the drain electrode interconnection of described the 4th nmos pass transistor and described the 6th nmos pass transistor, the drain electrode interconnection of described the 5th nmos pass transistor and described the 7th nmos pass transistor;
The gate interconnection of described the 8th nmos pass transistor and the 9th nmos pass transistor is used to import second bias voltage, and by the 3rd electric capacity (C3) ground connection; The source electrode of described the 8th nmos pass transistor is connected to the source electrode of described the 4th nmos pass transistor and the 5th nmos pass transistor, and drain electrode is connected to the drain electrode of described the 5th nmos pass transistor and described the 7th nmos pass transistor, and is connected to load circuit; The source electrode of described the 9th nmos pass transistor is connected to the source electrode of described the 6th nmos pass transistor and the 7th nmos pass transistor, and drain electrode is connected to the drain electrode of described the 4th nmos pass transistor and described the 6th nmos pass transistor, and is connected to load circuit.
Frequency mixer of the present invention, connect transistor to M8 and M9 by drain electrode in transconductance stage circuit, make that the drain voltage of mutual conductance pipe is relatively stable with the circuit that flows through the mutual conductance pipe, keep a relative constant, so the radiofrequency signal (RF signal) of amplifying is subjected to 2 times intrinsic signals (2LO signal) influence just little, the RF signal attenuation of amplifying is just few, finally makes frequency mixer of the present invention have higher gain and lower noise factor.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the circuit diagram of existing Gilbert frequency mixer;
Fig. 2 is the circuit diagram of Gilbert frequency mixer of the present invention.
Embodiment
The present invention has realized a kind of high-gain low-noise type frequency mixer, is used for the RFID circuit.Conventional mixer in this frequency mixer and the background technology has higher gain and lower noise factor by comparison.
To achieve these goals, the present invention adopts following technical scheme.This frequency mixer is on the basis of conventional mixer, increased the transistor that a pair of harmonic wave suppresses, grid administration of fixed bias voltage, source electrode and drain electrode as shown in Figure 2 mode respectively are connected to transistorized source electrode of switching stage and drain electrode, when the frequency mixer operate as normal, just can suppress the frequency (2LO) of 2 times local oscillation signal, make that the drain electrode of mutual conductance pipe is stable, the final radiofrequency signal of amplifying that makes can not decay because of the influence of 2LO signal, thereby has realized the high-gain and the low-noise factor of frequency mixer.
Now specifically describe technical scheme of the present invention in conjunction with Fig. 2, frequency mixer comprises: tail current source, transconductance stage circuit, switching stage circuit, harmonic wave suppress circuit and load circuit.
Its annexation is: the tail current source circuit comprises the first nmos pass transistor M1, the grid input offset voltage V of first nmos pass transistor
B1Source ground;
Transconductance stage circuit comprises the second nmos pass transistor M2 and the 3rd nmos pass transistor M3, the source electrode of second nmos pass transistor and the 3rd nmos pass transistor all is connected to the drain electrode of first nmos pass transistor, the grid of second nmos pass transistor meets RF+ (radiofrequency signal positive input terminal), the grid of the 3rd nmos pass transistor meets RF-(radiofrequency signal negative input end), the drain electrode of second nmos pass transistor connects the source electrode of the 4th nmos pass transistor and the 5th nmos pass transistor, and the drain electrode of the 3rd nmos pass transistor connects the source electrode of the 6th nmos pass transistor and the 7th nmos pass transistor;
The switching stage circuit comprises the 4th nmos pass transistor M4, the 5th nmos pass transistor M5, the 6th nmos pass transistor M6 and the 7th nmos pass transistor M7; The grid of the 4th nmos pass transistor meets LO+ (intrinsic signals positive input terminal), and the gate interconnection of the 5th nmos pass transistor and the 6th nmos pass transistor also meets LO-(intrinsic signals negative input end), and the grid of the 7th nmos pass transistor meets LO+; The source electrode of the 4th nmos pass transistor and the 5th nmos pass transistor connects the drain electrode of second nmos pass transistor, the source electrode of the 6th nmos pass transistor and the 7th nmos pass transistor connects the drain electrode that grid in the transconductance stage circuit connects the 3rd nmos pass transistor, the drain electrode interconnection of the 4th nmos pass transistor and the 6th nmos pass transistor, the drain electrode interconnection of the 5th nmos pass transistor and the 7th nmos pass transistor;
The gate interconnection of the 8th nmos pass transistor and the 9th nmos pass transistor is used for input offset voltage V
B2And by the 3rd capacitor C 3 ground connection; The source electrode of the 8th nmos pass transistor is connected to the source electrode of the 4th nmos pass transistor and the 5th nmos pass transistor, and drain electrode is connected to the drain electrode of the 5th nmos pass transistor and the 7th nmos pass transistor, and is connected to load circuit; The source electrode of the 9th nmos pass transistor is connected to the source electrode of the 6th nmos pass transistor and the 7th nmos pass transistor, and drain electrode is connected to the drain electrode of the 4th nmos pass transistor and the 6th nmos pass transistor, and is connected to load circuit.
Load circuit comprises first capacitor C 1 and first resistance R, 1, the second capacitor C 2 and second resistance R 2; The interconnection of one end of first electric capacity and an end of first resistance also is connected to the drain electrode of the 9th nmos pass transistor, another termination IF+ (intermediate-freuqncy signal positive input terminal) of first electric capacity, and the other end of first resistance is the supply voltage vdd terminal; The interconnection of one end of second electric capacity and an end of second resistance also is connected to the drain electrode of the 8th nmos pass transistor, and the other end of second electric capacity is IF-(an intermediate-freuqncy signal negative input end), and the other end of second resistance is a vdd terminal.
Metal-oxide-semiconductor M1 also claims the tail current pipe, is used to improve stable operating current.Metal-oxide-semiconductor M2 and metal-oxide-semiconductor M3 are also referred to as the mutual conductance pipe, are used for the radio-frequency voltage conversion of signals is become the radio-frequency current signal; Metal-oxide-semiconductor M4, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 and metal-oxide-semiconductor M7 are also referred to as switching tube; Metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 are right for the transistor that suppresses 2 times of local oscillation signal frequencies (2LO); Capacitor C 1 and capacitor C 2 are output capacitances; Capacitor C 3 is filter capacitors, and resistance R 1 and resistance R 2 are load resistances, is used for the electric current of intermediate frequency conversion of signals is become voltage signal.
Radiofrequency signal input transistors M2 and M3, and the radio-frequency voltage conversion of signals is become the radio-frequency current signal, local oscillation signal input LO+ and LO-are the differential signal of a pair of fixed amplitude, these two signals can control switch pipe M4, M5, the on off state of M6 and M7, after current signal flows through switching tube, be equivalent to signal multiplication with switch, in load, just produced at last and frequency and difference frequency voltage signal, in upper frequency mixer, used and radiofrequency signal frequently, in down-conversion mixer, use the intermediate-freuqncy signal of difference frequency, used the intermediate-freuqncy signal IF+ and the IF-of difference in the present invention.
In traditional frequency mixer, the voltage of mutual conductance pipe drain electrode and the electric current that flows through the mutual conductance pipe can be subjected to the effect of signals (the 2LO signal results from local oscillation signal LO) of 2LO, and the signal of output will comprise signal after the radiofrequency signal of amplification and 2LO signal and the mixing.Because the RF signal that flows through the mutual conductance pipe is controlled by the 2LO frequency, thereby make the final RF signal that amplifies produce decay to a certain extent, so just make that the gain of traditional frequency mixer is not high and noise factor is bigger.
And in frequency mixer of the present invention, transistor M8 and M9 are connected the drain electrode of mutual conductance pipe, can make that the drain voltage of mutual conductance pipe is relatively stable with the circuit that flows through the mutual conductance pipe, keep a relative constant, so the RF signal that amplifies is subjected to the 2LO effect of signals just little, the RF signal attenuation of amplifying is just few, finally makes frequency mixer of the present invention have higher gain and lower noise factor.
Claims (2)
1. the frequency mixer in the radio-frequency (RF) identification comprises tail current source circuit, transconductance stage circuit, switching stage circuit and load circuit, it is characterized in that:
Described frequency mixer comprises that also the harmonic wave of being made up of the 8th nmos pass transistor (M8) and the 9th nmos pass transistor (M9) suppresses circuit;
Described switching stage circuit comprises the 4th nmos pass transistor (M4), the 5th nmos pass transistor (M5), the 6th nmos pass transistor (M6) and the 7th nmos pass transistor (M7); The grid of described the 4th nmos pass transistor connects the positive input terminal of intrinsic signals, the gate interconnection of described the 5th nmos pass transistor and the 6th nmos pass transistor also connects the negative input end of intrinsic signals, and the grid of described the 7th nmos pass transistor connects the positive input terminal of intrinsic signals; The source electrode of described the 4th nmos pass transistor and the 5th nmos pass transistor connects the drain electrode that grid in the described transconductance stage circuit connects that nmos pass transistor of radiofrequency signal positive input terminal, the source electrode of described the 6th nmos pass transistor and the 7th nmos pass transistor connects the drain electrode that grid in the described transconductance stage circuit connects that nmos pass transistor of radiofrequency signal negative input end, the drain electrode interconnection of described the 4th nmos pass transistor and described the 6th nmos pass transistor, the drain electrode interconnection of described the 5th nmos pass transistor and described the 7th nmos pass transistor;
The gate interconnection of described the 8th nmos pass transistor and the 9th nmos pass transistor is used to import second bias voltage, and by the 3rd electric capacity (C3) ground connection; The source electrode of described the 8th nmos pass transistor is connected to the source electrode of described the 4th nmos pass transistor and the 5th nmos pass transistor, and drain electrode is connected to the drain electrode of described the 5th nmos pass transistor and described the 7th nmos pass transistor, and is connected to load circuit; The source electrode of described the 9th nmos pass transistor is connected to the source electrode of described the 6th nmos pass transistor and the 7th nmos pass transistor, and drain electrode is connected to the drain electrode of described the 4th nmos pass transistor and described the 6th nmos pass transistor, and is connected to load circuit.
2. frequency mixer as claimed in claim 1 is characterized in that:
Described tail current source circuit comprises first nmos pass transistor (M1), and the grid of described first nmos pass transistor is imported first bias voltage, source ground;
Described transconductance stage circuit comprises second nmos pass transistor (M2) and the 3rd nmos pass transistor (M3), the source electrode of described second nmos pass transistor and described the 3rd nmos pass transistor all is connected to the drain electrode of described first nmos pass transistor, the grid of described second nmos pass transistor connects the radiofrequency signal positive input terminal, the grid of described the 3rd nmos pass transistor connects the radiofrequency signal negative input end, the drain electrode of described second nmos pass transistor connects the source electrode of the 4th nmos pass transistor and the 5th nmos pass transistor, and the drain electrode of described the 3rd nmos pass transistor connects the source electrode of the 6th nmos pass transistor and the 7th nmos pass transistor;
Described load circuit comprises first electric capacity (C1) and first resistance (R1), second electric capacity (C2) and second resistance (R2); The interconnection of one end of described first electric capacity and an end of first resistance also is connected to the drain electrode of the 9th nmos pass transistor, another termination intermediate-freuqncy signal positive input terminal of described first electric capacity, another termination supply voltage of described first resistance; The interconnection of one end of described second electric capacity and an end of second resistance also is connected to the drain electrode of the 8th nmos pass transistor, another termination intermediate-freuqncy signal negative input end of described second electric capacity, another termination supply voltage of described second resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201493667U CN202026277U (en) | 2011-05-12 | 2011-05-12 | Mixer used in radio frequency identification |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201493667U CN202026277U (en) | 2011-05-12 | 2011-05-12 | Mixer used in radio frequency identification |
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| CN202026277U true CN202026277U (en) | 2011-11-02 |
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| CN2011201493667U Expired - Lifetime CN202026277U (en) | 2011-05-12 | 2011-05-12 | Mixer used in radio frequency identification |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117707A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Lower power consumption high gain upper mixer |
| CN104767489A (en) * | 2014-01-03 | 2015-07-08 | 瑞昱半导体股份有限公司 | Active mixer and active frequency mixing method |
| CN104935260A (en) * | 2015-06-03 | 2015-09-23 | 西安电子科技大学 | High-gain low-noise frequency mixer |
| CN104935259A (en) * | 2015-06-03 | 2015-09-23 | 西安电子科技大学 | Folding orthogonal double balanced mixer |
| CN108880477A (en) * | 2018-06-25 | 2018-11-23 | 东南大学 | A kind of gilbert's upper frequency mixer applied to LTE MTC electric power Internet of Things |
-
2011
- 2011-05-12 CN CN2011201493667U patent/CN202026277U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117707A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Lower power consumption high gain upper mixer |
| CN103117707B (en) * | 2013-01-18 | 2015-05-06 | 东南大学 | Lower power consumption high gain upper mixer |
| CN104767489A (en) * | 2014-01-03 | 2015-07-08 | 瑞昱半导体股份有限公司 | Active mixer and active frequency mixing method |
| CN104935260A (en) * | 2015-06-03 | 2015-09-23 | 西安电子科技大学 | High-gain low-noise frequency mixer |
| CN104935259A (en) * | 2015-06-03 | 2015-09-23 | 西安电子科技大学 | Folding orthogonal double balanced mixer |
| CN104935259B (en) * | 2015-06-03 | 2018-06-22 | 西安电子科技大学 | It is a kind of to fold orthogonal double balanced mixer |
| CN108880477A (en) * | 2018-06-25 | 2018-11-23 | 东南大学 | A kind of gilbert's upper frequency mixer applied to LTE MTC electric power Internet of Things |
| CN108880477B (en) * | 2018-06-25 | 2022-04-15 | 东南大学 | Be applied to mixer on Gilbert of LTE MTC electric power thing networking |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111102 |
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| CX01 | Expiry of patent term |