CN201323200Y - Crystalline silicon solar battery - Google Patents
Crystalline silicon solar battery Download PDFInfo
- Publication number
- CN201323200Y CN201323200Y CNU200820169137XU CN200820169137U CN201323200Y CN 201323200 Y CN201323200 Y CN 201323200Y CN U200820169137X U CNU200820169137X U CN U200820169137XU CN 200820169137 U CN200820169137 U CN 200820169137U CN 201323200 Y CN201323200 Y CN 201323200Y
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- nitride film
- silicon solar
- solar cell
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Disclosed is a crystalline silicon solar battery, which comprises a first silicon nitride film layer (2) and a second silicon nitride film layer (3) with different refractivity and thickness, wherein the first silicon nitride film layer (2) clings to an illuminated surface (1) of the crystalline silicon solar battery and the second silicon nitride film layer (3) clings to the surface of the first silicon nitride film (2). The crystalline silicon solar battery can further reduce reflectivity to increase photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of crystal-silicon solar cell.
Background technology
At present, two key issues of restriction solar cell extensive use are: 1, photoelectric conversion efficiency; 2, cost.Crystal-silicon solar cell is low because of its cost, be convenient to advantages such as large-scale production generally is subject to people's attention and is developed rapidly.The prior art of crystal-silicon solar cell is by reducing light reflectivity on the solar panel at crystal-silicon solar cell surface deposition one deck silicon nitride attenuate film to improve the photoelectric conversion efficiency of crystal-silicon solar cell, common practices is to adopt the PECVD technology to deposit one deck antireflection film on the sensitive surface of crystal-silicon solar cell, be silicon nitride film, thereby reach the purpose that improves photoelectric conversion efficiency.Though this structure has reduced the light reflectivity of crystal-silicon solar cell to a certain extent, the light reflectivity of the crystal-silicon solar cell that prior art is produced is unfavorable for the raising of photoelectric conversion efficiency still than higher.
The utility model content
The technical problems to be solved in the utility model is to provide a kind of further reduction light reflectivity to improve the crystal-silicon solar cell of photoelectric conversion efficiency.
The technical solution of the utility model is, a kind of crystal-silicon solar cell is provided, it comprises first silicon nitride film layer that is fitted on the crystal-silicon solar cell sensitive surface, it also comprises second silicon nitride film layer of one deck different refractivity, different-thickness, and described second silicon nitride film layer is fitted in the surface of described first silicon nitride film layer.
After adopting above structure, the utility model compared with prior art has the following advantages:
On existing silicon nitride film basis, fitted the again silicon nitride film of one deck different refractivity, different-thickness of the utility model crystal-silicon solar cell, can further reduce the reflectivity on the solar cell sensitive surface, thereby further improve the photoelectric conversion efficiency of crystal-silicon solar cell.
Description of drawings
Accompanying drawing is a structure chart of the present utility model.
Shown in the figure 1, sensitive surface, 2, first silicon nitride film layer, 3, second silicon nitride film layer.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
As shown in drawings, the utility model is a kind of crystal-silicon solar cell, it comprises first silicon nitride (SiNx) thin layer 2 that is fitted on the crystal-silicon solar cell sensitive surface 1, it also comprises second silicon nitride (SiNx) thin layer 3 of one deck different refractivity, different-thickness, and described second silicon nitride (SiNx) thin layer 3 is fitted in the surface of described first silicon nitride (SiNx) thin layer 2.
The utility model adopts the antireflective coating of PECVD technology at the sensitive surface 1 deposition pair of lamina silicon nitride (SiNx) of crystal-silicon solar cell.
Can get according to the interference of light principle, the anti-reflective effect of individual layer antireflective coating is limited, therefore needs double layer antireflection coating or double-layer reflection reducing coating further to reduce reflection.Reflectivity at the semiconductor surface of reality is relevant with the incident light wavelength, is generally 30～50%.For preventing the reflection on surface, prepare the transparent thin film layer of refractive index between semiconductor and air refraction at semiconductor surface.This thin layer is called antireflective coating.
If the refractive index of semiconductor, antireflective coating, air is respectively n
2, n
1, n
0, antireflective coating thickness is d
1, λ is a wavelength, then the formula that satisfies as required:
r
1＝(n
0-n
1)/(n
0+n
1)
r
2＝(n
1-n
2)/(n
1+n
2)
θ＝2πn
1d
1/λ
Obviously, the thickness d of antireflective coating
1When being 1/4 wavelength, R is minimum.
Therefore, draw according to top formula, the refractive index of described first silicon nitride (SiNx) film is 2.3～2.6, and the thickness of described first silicon nitride (SiNx) thin layer 2 is 55～65nm; The refractive index of described second silicon nitride (SiNx) film is 1.4～1.7, and the thickness of described second silicon nitride (SiNx) thin layer 3 is 85～110nm.
In addition, show according to test data: crystal-silicon solar cell is when adopting individual layer silicon nitride (SiNx) film as antireflection film, the crystal-silicon solar cell current density is 33.5mA/cm2, and when adopting double-deck silicon nitride (SiNx) film as antireflection film, the crystal silicon cell current density is 34.2mA/cm2, and short-circuit current density improves 2%.Therefore, double-deck silicon nitride (SiNx) film that can draw the utility model use is with respect to individual layer silicon nitride (SiNx) film, and its reflectivity reduces, and photoelectric conversion efficiency has had raising definitely.
Claims (3)
1, a kind of crystal-silicon solar cell, it comprises first silicon nitride film layer (2) that is fitted on the crystal-silicon solar cell sensitive surface (1), it is characterized in that: it also comprises second silicon nitride film layer (3) of one deck different refractivity, different-thickness, and described second silicon nitride film layer (3) is fitted in the surface of described first silicon nitride film layer (2).
2, crystal-silicon solar cell according to claim 1 is characterized in that: the refractive index of described first silicon nitride film is 2.3～2.6, and the thickness of described first silicon nitride film layer (2) is 55～65nm.
3, crystal-silicon solar cell according to claim 1 is characterized in that: the refractive index of described second silicon nitride film is 1.4～1.7, and the thickness of described second silicon nitride film layer (3) is 85～110nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820169137XU CN201323200Y (en) | 2008-11-28 | 2008-11-28 | Crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820169137XU CN201323200Y (en) | 2008-11-28 | 2008-11-28 | Crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201323200Y true CN201323200Y (en) | 2009-10-07 |
Family
ID=41160575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200820169137XU Expired - Lifetime CN201323200Y (en) | 2008-11-28 | 2008-11-28 | Crystalline silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201323200Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958353A (en) * | 2010-04-20 | 2011-01-26 | 常州天合光能有限公司 | Three-layer antireflection passivating film on solar battery surface |
| CN102222733A (en) * | 2011-07-01 | 2011-10-19 | 宁波尤利卡太阳能科技发展有限公司 | Preparation method of double-layer silicon nitride anti-reflecting film |
-
2008
- 2008-11-28 CN CNU200820169137XU patent/CN201323200Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958353A (en) * | 2010-04-20 | 2011-01-26 | 常州天合光能有限公司 | Three-layer antireflection passivating film on solar battery surface |
| CN102222733A (en) * | 2011-07-01 | 2011-10-19 | 宁波尤利卡太阳能科技发展有限公司 | Preparation method of double-layer silicon nitride anti-reflecting film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091007 |