CN102222733A - Preparation method of double-layer silicon nitride anti-reflecting film - Google Patents
Preparation method of double-layer silicon nitride anti-reflecting film Download PDFInfo
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- CN102222733A CN102222733A CN2011101824819A CN201110182481A CN102222733A CN 102222733 A CN102222733 A CN 102222733A CN 2011101824819 A CN2011101824819 A CN 2011101824819A CN 201110182481 A CN201110182481 A CN 201110182481A CN 102222733 A CN102222733 A CN 102222733A
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Abstract
The invention discloses a preparation method of a double-layer silicon nitride anti-reflecting film, which is characterized by comprising the following preparation steps of: (1) depositing a first silicon nitride film on the front surface of a crystalline silicon solar battery, wherein the thickness of the first silicon nitride film is 10-20 nm; and (2) depositing a second silicon nitride film on the first silicon nitride film prepared in the step (1), wherein the thickness of the second silicon nitride film is 60-70 nm. Compared with an one-layer silicon nitride anti-reflecting film, through the double-layer silicon nitride anti-reflecting film prepared in the invention, the reflection of a battery to sunlight is reduced by 1%-2%, and the conversion efficiency of the battery is improved by about 1.5%; therefore, the solar battery has lower reflection ratio and higher conversion efficiency.
Description
Technical field
The present invention relates to the crystal-silicon solar cell preparation field, be specifically related to a kind of double-deck silicon nitride antireflective coating preparation method of crystal-silicon solar cell.
Background technology
The making of antireflective coating is that solar cell is made one important procedure in the flow process.The main effect of this film is to reduce sun reflection of light, increases the absorption of battery to sunlight, improves the conversion efficiency of battery.The antireflective coatings that adopt silicon nitride as crystal-silicon solar cell in the suitability for industrialized production more.The main using plasma of this method strengthens chemical vapour deposition (CVD) (PECVD) method at the battery front side deposited silicon nitride, principle is as reacting gas with silane and ammonia, the high temperature that produces when utilizing gas discharge decomposes reacting gas, generate silicon nitride by chemical reaction then, the reaction of generation is:
SiH
4?+?NH
3→SiN
x?+?H
2
Though the manufacture method of this individual layer silicon nitride film is comparatively simple, operation easily, but because the spectral region of sunlight is very wide, individual layer silicon nitride antireflective coating effect also is not very desirable, and reflectivity is still up to 4%-5%, causes the absorptivity of sunlight low, conversion efficiency is undesirable; Therefore, how making the lower antireflective coating of reflectivity, to improve battery efficiency be the technical problem that the industry needs to be resolved hurrily.
Summary of the invention
The present invention is directed to the above-mentioned deficiency of prior art, provide a kind of solar cell that makes to have lower reflectivity, the double-deck silicon nitride antireflective coating preparation method of higher conversion efficiency.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of double-deck silicon nitride antireflective coating preparation method, and preparation process comprises: (1) at the positive deposition of crystal-silicon solar cell ground floor silicon nitride film, thickness is 10nm-20nm; (2) deposition second layer silicon nitride film on the ground floor silicon nitride film of step (1) preparation, thickness is 60nm-70nm.
The above-mentioned double-deck silicon nitride antireflective coating preparation method of the present invention, preparation process specifically comprises:
(1) will pack in the graphite boat through the silicon chip after the pre-treatment, put into deposition chambers, carry out the deposition of ground floor silicon nitride then: ground floor silicon nitride depositing temperature is 350 ℃～550 ℃, ground floor silicon nitride deposition power is 4000W～6000W, ground floor silicon nitride deposition gases ratio is the flow-rate ratio 3～5:1 of ammonia and silane, and ground floor silicon nitride sedimentation time is 1 ~ 3 minute;
(2) step (1) is deposited the silicon nitride deposition that ground floor silicon nitride silicon chip afterwards carries out the second layer: second layer silicon nitride depositing temperature is 350 ℃～550 ℃, second layer silicon nitride deposition power is 4000W～6000W, second layer silicon nitride deposition gases ratio is the flow-rate ratio 7 ~ 10:1 of ammonia and silane, and second layer silicon nitride sedimentation time is 8 ~ 11 minutes.
Pre-treatment described in the above-mentioned steps (1) is the industry conventional treatment process, is mainly: operations such as cleaning, diffusion, etching, dephosphorization silex glass.
Compared with prior art, the present invention has the following advantages and beneficial effect: the preparation method of the double-deck silicon nitride antireflective coating of the present invention, by regulating the parameter of silicon nitride film, comprise depositing temperature, sedimentation time, deposition power, reaction gas flow than waiting thickness and refractive index of controlling each layer nitrogenize film, make that performance is different, the double-deck preferably silicon nitride of coupling is as antireflective coating.Compare with individual layer silicon nitride antireflective coating, this antireflective coating can make battery that sun reflection of light has been reduced 1%-2%, and battery conversion efficiency has improved about 1.5%, therefore, makes solar cell have lower reflectivity, higher conversion efficiency.
Embodiment
Below in conjunction with embodiment the present invention is further described in detail, but is not limited to this.
Embodiment 1
Will be through (said method of preorder is the industry conventional treatment method after cleaning, diffusion, etching, the dephosphorization silex glass, do not repeat them here) silicon chip pack in the PECVD settling chamber, set ground floor silicon nitride deposition parameter: depositing temperature is 420 ℃, deposition power is 5300W, the flow-rate ratio of ammonia and silane is 4.4:1, sedimentation time is 100 seconds, and the control silicon nitride thickness is 12nm, and refractive index is 2.3.
Setting second layer silicon nitride deposition parameter is: depositing temperature is 420 ℃, and deposition power is 5300W, and the flow-rate ratio of ammonia and silane is 8.7:1, and sedimentation time is 600 seconds, and the control silicon nitride thickness is 68nm, and refractive index is 2.05.Operation process, deposited silicon nitride after two-layer silicon nitride deposition finishes, takes out silicon chip and carries out the test of reflectivity R earlier, is made into battery, the last test unit for electrical property parameters through printing and sintering circuit then.
Comparative Examples 1
To pack in the PECVD settling chamber through the silicon chip after the cleaning, diffusion, etching, dephosphorization silex glass, setting individual layer silicon nitride film deposition parameter is: depositing temperature is 450 ℃, deposition power is 5650W, and the flow-rate ratio of ammonia and silane is 8.7:1, and sedimentation time is 650 seconds.Operation process, deposited silicon nitride after individual layer silicon nitride deposition finishes, takes out silicon chip and carries out the test of reflectivity R earlier, is made into battery, the last test unit for electrical property parameters through printing and sintering circuit then.
Test data is as shown in table 1 below:
Table 1 embodiment 1 compares with Comparative Examples 1 preparation properties of sample
Embodiment 2
To pack in the PECVD settling chamber through the silicon chip after the cleaning, diffusion, etching, dephosphorization silex glass, set ground floor silicon nitride deposition parameter: depositing temperature is 450 ℃, deposition power is 5650W, the flow-rate ratio of ammonia and silane is 3.8:1, sedimentation time is 150 seconds, the control silicon nitride thickness is 20nm, and refractive index is 2.4.
Setting second layer silicon nitride deposition parameter is: depositing temperature is 450 ℃, and deposition power is 5650W, and the flow-rate ratio of ammonia and silane is 8.7:1, and sedimentation time is 500 seconds, and the control silicon nitride thickness is 60nm, and refractive index is 2.05.Operation process, deposited silicon nitride after two-layer silicon nitride deposition finishes, takes out silicon chip and carries out the test of reflectivity R earlier, is made into battery, the last test unit for electrical property parameters through printing and sintering circuit then.
Comparative Examples 2
To pack in the PECVD settling chamber through the silicon chip after the cleaning, diffusion, etching, dephosphorization silex glass, setting individual layer silicon nitride film deposition parameter is: depositing temperature is 420 ℃, deposition power is 5000W, and the flow-ratio control of ammonia and silane is 9.2:1, and sedimentation time is 700 seconds.Operation process, deposited silicon nitride after individual layer silicon nitride deposition finishes, takes out silicon chip and carries out the test of reflectivity R earlier, is made into battery, the last test unit for electrical property parameters through printing and sintering circuit then.
Test data is as shown in table 2 below:
Table 2 embodiment 2 compares with Comparative Examples 2 preparation properties of sample
The difference of its corresponding Comparative Examples of embodiment is: embodiment is for utilizing double-deck silicon nitride as antireflective coating, and Comparative Examples is that common individual layer silicon nitride is as antireflective coating.By above test data as can be known, the battery that double-deck silicon nitride is made as antireflective coating, reflectivity reduces, battery increases the absorption of light, so the photo-generated carrier that battery produces is many, shows as short circuit current Isc and increases, conversion efficiency Eff increases, and the overall performance electrical performance of crystal-silicon solar cell increases.
The above embodiment of the present invention is can not be used to limit the present invention to explanation of the present invention, and implication suitable with claims of the present invention and any change in the scope all should be thought to be included in the scope of claims.
Claims (2)
1. double-deck silicon nitride antireflective coating preparation method, it is characterized in that: preparation process comprises: (1) at the positive deposition of crystal-silicon solar cell ground floor silicon nitride film, thickness is 10nm-20nm; (2) deposition second layer silicon nitride film on the ground floor silicon nitride film of step (1) preparation, thickness is 60nm-70nm.
2. double-deck silicon nitride antireflective coating preparation method according to claim 1, it is characterized in that: preparation process specifically comprises:
(1) will pack in the graphite boat through the silicon chip after the pre-treatment, put into deposition chambers, carry out the deposition of ground floor silicon nitride then: ground floor silicon nitride depositing temperature is 350 ℃～550 ℃, ground floor silicon nitride deposition power is 4000W～6000W, ground floor silicon nitride deposition gases ratio is the flow-rate ratio 3～5:1 of ammonia and silane, and ground floor silicon nitride sedimentation time is 1 ~ 3 minute;
(2) step (1) is deposited the silicon nitride deposition that ground floor silicon nitride silicon chip afterwards carries out the second layer: second layer silicon nitride depositing temperature is 350 ℃～550 ℃, second layer silicon nitride deposition power is 4000W～6000W, second layer silicon nitride deposition gases ratio is the flow-rate ratio 7 ~ 10:1 of ammonia and silane, and second layer silicon nitride sedimentation time is 8 ~ 11 minutes.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102437248A (en) * | 2011-12-21 | 2012-05-02 | 中电电气（南京）光伏有限公司 | Preparation method of selective emitter crystalline silicon solar cell |
| CN103107207A (en) * | 2011-11-11 | 2013-05-15 | 中国科学院沈阳科学仪器研制中心有限公司 | Multilayer film structure for improving conversion efficiency of crystalline silicon solar cell |
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
| CN103137716A (en) * | 2011-11-25 | 2013-06-05 | 清华大学 | Solar battery, solar battery pack and method for preparing solar battery pack |
| CN103545197A (en) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | Tube-type PECVD double-layer silicon nitride film preparation process |
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN105261672A (en) * | 2015-09-17 | 2016-01-20 | 宁波尤利卡太阳能科技发展有限公司 | Preparation method for solar cell resistant to potential induced degradation (PID) |
| CN108962999A (en) * | 2018-06-14 | 2018-12-07 | 东方日升（常州）新能源有限公司 | The composite membrane and preparation method thereof of solar battery attenuating reflectivity |
| CN112687762A (en) * | 2020-12-28 | 2021-04-20 | 无锡松煜科技有限公司 | Solar cell surface passivation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103107207A (en) * | 2011-11-11 | 2013-05-15 | 中国科学院沈阳科学仪器研制中心有限公司 | Multilayer film structure for improving conversion efficiency of crystalline silicon solar cell |
| CN103137716A (en) * | 2011-11-25 | 2013-06-05 | 清华大学 | Solar battery, solar battery pack and method for preparing solar battery pack |
| CN103137716B (en) * | 2011-11-25 | 2016-04-27 | 清华大学 | Solar cell, solar battery group and preparation method thereof |
| CN102437248A (en) * | 2011-12-21 | 2012-05-02 | 中电电气（南京）光伏有限公司 | Preparation method of selective emitter crystalline silicon solar cell |
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| CN103545197A (en) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | Tube-type PECVD double-layer silicon nitride film preparation process |
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN103556125B (en) * | 2013-10-29 | 2016-03-02 | 宁夏银星能源股份有限公司 | A kind of metallurgical grade monocrystaline silicon solar cell double layer antireflection film coating process |
| CN105261672A (en) * | 2015-09-17 | 2016-01-20 | 宁波尤利卡太阳能科技发展有限公司 | Preparation method for solar cell resistant to potential induced degradation (PID) |
| CN108962999A (en) * | 2018-06-14 | 2018-12-07 | 东方日升（常州）新能源有限公司 | The composite membrane and preparation method thereof of solar battery attenuating reflectivity |
| CN112687762A (en) * | 2020-12-28 | 2021-04-20 | 无锡松煜科技有限公司 | Solar cell surface passivation method |
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Application publication date: 20111019 |