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CN209981235U - Graphene mid-infrared light detector based on phonon excimer enhancement - Google Patents

Graphene mid-infrared light detector based on phonon excimer enhancement Download PDF

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Publication number
CN209981235U
CN209981235U CN201920472001.4U CN201920472001U CN209981235U CN 209981235 U CN209981235 U CN 209981235U CN 201920472001 U CN201920472001 U CN 201920472001U CN 209981235 U CN209981235 U CN 209981235U
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graphene
mid
infrared light
layer
graphene layer
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鲍小志
马玮良
欧清东
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Nanjing Kenai Laser Technology Co ltd
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Shenzhen Exciter Technology Co Ltd
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Abstract

A graphene mid-infrared light detector based on phonon excimer enhancement belongs to the technical field of mid-infrared light detection. The utility model comprises a silicon substrate, a silicon dioxide layer, a graphene layer and a molybdenum trioxide micro-nano structure array covered on the graphene layer which are sequentially stacked from bottom to top; the molybdenum trioxide micro-nano structure array and the graphene layer form a phonon excimer enhanced heterostructure; an electrode is arranged above the edge of the graphene layer and extends to the overlapping area of the molybdenum trioxide micro-nano structure array and the graphene layer. In order to solve the technical problem, the utility model discloses a have the photoelectric conversion efficiency who promotes by a wide margin at the mid-infrared band, preparation method is simple, moreover with low costs purpose.

Description

Graphene mid-infrared light detector based on phonon excimer enhancement
Technical Field
The utility model belongs to the technical field of well infrared light detection.
Background
At present, the mid-infrared light detector using graphene as a light absorption function layer generally has the disadvantages of large dark current, low signal-to-noise ratio and low monoatomic layer light absorption rate (~ 2.3.3%), so that a photoelectronic device based on monoatomic layer intrinsic graphene cannot obtain sufficiently strong light-substance interaction.
Recently, phonon polaritons based on van der waals polar materials exhibit properties superior to conventional plasmons. Phonons are generated in polar lattices, and are electromagnetic oscillations formed by charges bound near the crystal lattice in response to incident electromagnetic radiation, and the most remarkable characteristics of the phonons are that the phonons have extremely low loss, the response to resonance wavelength is stronger, and the peak width of the resonance is narrower. In particular, natural layered molybdenum trioxide crystals are reported to have ultra-low loss in-plane anisotropic phonons capable of strongly coupling mid-infrared light, and the generated polaritons have an ultra-long lifetime. Therefore, how to effectively integrate low-loss phonon excimer and graphene, enhance the absorption efficiency of the middle and external light, and prepare the ultra-high-performance middle infrared light detector still is a challenge to be solved urgently.
In view of the above, the present inventors have actively studied and innovated to create a new structure of graphene mid-infrared light detector based on phonon excimer enhancement and a method for manufacturing the same, so that the graphene mid-infrared light detector has industrial application value.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model aims at providing a graphite alkene light detector based on phonon excimer reinforcing that has high photoelectric conversion efficiency at the mid infrared light wave band, and preparation method is simple, with low costs, and good reproducibility moreover.
A phonon excimer enhancement-based graphene mid-infrared light detector comprises a silicon substrate, a silicon dioxide layer, a graphene layer and a molybdenum trioxide micro-nano structure array, wherein the silicon substrate, the silicon dioxide layer and the graphene layer are sequentially stacked from bottom to top; the molybdenum trioxide micro-nano structure array and the graphene layer form a phonon excimer enhanced heterostructure; an electrode is arranged above the edge of the graphene layer and extends to the overlapping area of the molybdenum trioxide micro-nano structure array and the graphene layer.
Preferably, the silicon substrate of the present invention is coated with a metal layer as a back gate on a side facing the silicon dioxide layer.
Preferably, the electrode of the present invention is a butterfly-shaped antenna electrode, which is composed of a single metal electrode or a composite of two or more metals in gold, titanium, chromium, and nickel.
The utility model adopts the above technical scheme, compare with prior art and have following advantage:
1. the absorption of graphene in the mid-infrared band is enhanced by phonon excimer resonance generated by the molybdenum trioxide micro-nano structure array, the resonance factor is high, the coupling loss is small, and the problem that the existing noble metal material surface plasmon is difficult to enhance the photoresponse of the mid-infrared band is solved.
2. By utilizing the adjustability of the period and the morphology of the molybdenum trioxide micro-nano structure array, the tunability of the resonance absorption band of the graphene in the mid-infrared band is easy to realize, so that the narrow-band mid-infrared detection with adjustable wide band is obtained.
3. By utilizing the in-plane anisotropy propagated by the phonon excimer of the molybdenum trioxide crystal, the polarization and angle dependent response of the mid-infrared light can be realized, so that the effective detection of the mid-infrared light polarization of the graphene photodetector can be realized.
4. The utility model discloses a photoelectric detector based on phonon excimer reinforcing has the photoelectric conversion efficiency of reinforcing at the mid infrared light wave band, and preparation method is simple, with low costs, has combined graphite alkene and molybdenum trioxide to receive the respective advantage of structure array a little, has very latent using value in the mid infrared light detection field.
Drawings
Fig. 1 is a schematic structural diagram of a device of a graphene mid-infrared light detector based on phonon excimer enhancement in the present invention;
fig. 2 is a top view of a square pattern of the molybdenum trioxide micro-nano structure array of the present invention.
Fig. 3 is a top view of a circular pattern of the molybdenum trioxide micro-nano structure array of the present invention.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
Fig. 1 is a diagram of a graphene mid-infrared light detector based on phonon excimer enhancement according to a preferred embodiment of the present invention, which includes a silicon substrate 1, a silicon dioxide layer 2, a graphene layer 3, and a molybdenum trioxide micro-nano structure array 4 covering the graphene layer 3, which are stacked in sequence from bottom to top; the area of the graphene layer 3 is smaller than that of the silicon dioxide layer 2, and the area of the molybdenum trioxide micro-nano structure array 4 is smaller than that of the graphene layer 3; the molybdenum trioxide micro-nano structure array 4 and the graphene layer 3 form a phonon excimer enhanced heterostructure; an electrode 5 is arranged above the edge of the graphene layer 3, and the electrode 5 extends to the overlapping area of the molybdenum trioxide micro-nano structure array 4 and the graphene layer 3.
The present invention coats the metal layer as the back gate on the back surface (i.e., the surface facing the silicon dioxide layer 2) of the silicon substrate 1. The Fermi level of the graphene can be regulated and controlled by applying a back gate on the silicon substrate; the silicon dioxide layer 2 is used as a gate medium and plays roles of insulation and isolation; the graphene layer 3 is positioned above the silicon dioxide layer and is used as a light absorption layer and a carrier transmission layer, and the energy band structure of the graphene ensures that light absorption is realized in a mid-infrared light band; the molybdenum trioxide micro-nano structure array 4 is used as a phonon excimer functional layer, covers the surface of the graphene, and is used for enhancing coupling absorption of mid-infrared light and improving the responsiveness of the device; and the metal electrode 5 is used for applying bias voltage, is positioned above the graphene, is directly contacted with the graphene, and is not contacted with the molybdenum trioxide micro-nano structure array. Under the illumination of middle infrared light, phonon polaritons excited by the molybdenum trioxide micro-nano structure array can generate a high-strength local electric field, so that middle infrared electromagnetic waves are effectively absorbed by graphene, generated photo-generated carriers are transmitted to metal electrodes on two sides through the graphene and are collected by the metal electrodes to form photocurrent. Specifically, the two metal electrodes are composite electrodes made of titanium and gold, and the electrode patterns are butterfly antenna-shaped electrodes and used for efficiently capturing intermediate infrared light wavelengths and weakening the photo-thermal effect.
The molybdenum trioxide micro-nano structure array 4 has adjustable period and shape, such as a one-dimensional strip array, a two-dimensional square array 41 (shown in fig. 2), or a two-dimensional disc array 42 (shown in fig. 3).
The utility model discloses well graphite alkene light absorption layer and molybdenum trioxide receive the back of nano-structure array function layer, can produce and have the absorbed heterostructure of phonon excimer reinforcing light to make photoelectric detector have very high light capture efficiency and photoelectric conversion productivity.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (3)

1. A graphene mid-infrared light detector based on phonon excimer enhancement is characterized by comprising a silicon substrate (1), a silicon dioxide layer (2), a graphene layer (3) and a molybdenum trioxide micro-nano structure array (4) covering the graphene layer (3), wherein the silicon substrate, the silicon dioxide layer and the graphene layer are sequentially stacked from bottom to top; the molybdenum trioxide micro-nano structure array (4) and the graphene layer (3) form a phonon excimer enhanced heterostructure; an electrode (5) is arranged above the edge of the graphene layer, and the electrode (5) extends to the overlapping area of the molybdenum trioxide micro-nano structure array and the graphene layer.
2. The phonon-excimer-enhancement-based graphene mid-infrared light detector according to claim 1, wherein the silicon substrate (1) is coated with a metal layer as a back gate on a side facing the silicon dioxide layer (2).
3. The graphene mid-infrared light detector based on phonon excimer enhancement as claimed in claim 1, wherein the electrode (5) is a butterfly antenna electrode, and is composed of a single metal electrode or a composite of two or more metals selected from gold, titanium, chromium and nickel.
CN201920472001.4U 2019-04-09 2019-04-09 Graphene mid-infrared light detector based on phonon excimer enhancement Active CN209981235U (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098267A (en) * 2019-04-09 2019-08-06 深圳激子科技有限公司 A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer
CN111370506A (en) * 2020-03-12 2020-07-03 苏州众为光电有限公司 A three-array periodic near-infrared broadband light absorption enhancement structure
WO2020123049A3 (en) * 2018-10-31 2020-07-16 University Of Kansas Nanodome-graphene plasmonic substrates
CN113504197A (en) * 2021-06-18 2021-10-15 国家纳米科学中心 Microcavity-molybdenum oxide acoustic hyperbolic phonon polarization excimer device and preparation method and application thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020123049A3 (en) * 2018-10-31 2020-07-16 University Of Kansas Nanodome-graphene plasmonic substrates
CN110098267A (en) * 2019-04-09 2019-08-06 深圳激子科技有限公司 A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer
CN111370506A (en) * 2020-03-12 2020-07-03 苏州众为光电有限公司 A three-array periodic near-infrared broadband light absorption enhancement structure
CN113504197A (en) * 2021-06-18 2021-10-15 国家纳米科学中心 Microcavity-molybdenum oxide acoustic hyperbolic phonon polarization excimer device and preparation method and application thereof
CN113504197B (en) * 2021-06-18 2023-10-03 国家纳米科学中心 Microcavity-molybdenum oxide acoustic hyperbolic phonon polaritron device and its preparation method and application

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