CN207691196U - Day blind ultraviolet single-photon source - Google Patents
Day blind ultraviolet single-photon source Download PDFInfo
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- CN207691196U CN207691196U CN201721793763.1U CN201721793763U CN207691196U CN 207691196 U CN207691196 U CN 207691196U CN 201721793763 U CN201721793763 U CN 201721793763U CN 207691196 U CN207691196 U CN 207691196U
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Abstract
The utility model discloses a kind of blind ultraviolet single-photon sources of day, include the quantum dot embedding pin nano wires being made of wide bandgap semiconductor p-type layer, i types intrinsic layer, single quantum dot and n-layer or quantum dot embedding pin films, the energy gap of pin structures is more than 4.43 eV, and pin structures are more than the semi-conducting material of quantum dot using energy gap, to form class quantum well structure to enhance the quantum confinement to single quantum dot；The utility model is applicable in two kinds of mode of excitation of optical pumping and electric pump, can both emit perpendicular to substrate, can also be parallel to substrate transmitting, therefore can be not only used for free space single-photon source and can also be used for the integrated single-photon source of on piece；Its launch wavelength is in the non-solar-blind band less than 280 nm, and broad stopband quantum dot is suitable for room temperature or even high temperature single photon emission, can be widely applied to quantum information, quantum calculation, quantum imaging, quantum authentication, short distance secret communication, quantum accurate measurement related field.
Description
Technical field
The present invention relates to single-photon source, quantum secret communication, quantum information field, in particular to a kind of blind ultraviolet monochromatic lights of day
Component.
Background technology
Single-photon source is a kind of light source that can generate quantum state photon, is to realize quantum communications, quantum model, quantum meter
The important means of the quantum information technologies such as calculation, quantum storage.These quantum information field generally uses are visible at present and near-infrared
The single-photon source of wave band.Since natural light and artificial light sources are generally all in visible waveband, heat radiation is then in infrared band so that
The background interference that the single-photon source of current area is subject in the application is very big.
Day, blind ultraviolet band was the wave band that wavelength is less than 280 nm.In this wave band, sunlight is passing through earth atmosphere
During by ozone layer strong absorption, ground basically can not be reached.Therefore other than the extreme cases such as lightning, explosion
Optical signal near at the earth's surface usually completely without day blind ultraviolet band, is operated in being equivalent to for the single-photon source of the wave band
It is operated among natural darkroom, bias light interference effect is very small, this is to the micro- system of quantum information system especially quantum information
It unites highly beneficial.Due to being influenced by atmospheric attenuation, solar blind UV is particularly suitable for the short distance high security in 1 kilometer range
Secret communication is then all absorbed by air more than ultraviolet photon after this range, also can not implement purple to local in the distance substantially
Outer interference, therefore the possibility that it is remotely interfered and intercepted is almost nil.Ultraviolet light can also be by spreading in air
Molecule in layer is scattered transmission, to bypass some barriers, realizes non-line of sight communication.Therefore, solar blind UV
Communication has the transmission of extraordinary non line of sight and security performance, is highly suitable for closely anti-interference and has the communication loop blocked
Border.Between above-described plurality of advantages, day on piece of the blind ultraviolet single-photon source in future integrate quantum chip, short distance quantum
The fields such as secret communication are all expected to play a significant role.However, the technical solution of current single-photon source is concentrated mainly on near-infrared
Communication band and visible waveband.For there is no ripe scheme less than the day of 280nm blind ultraviolet band single-photon source.
Invention content
The purpose of the present invention is to provide a kind of blind ultraviolet single-photon source of day, the program can be less than the day of 280nm blind purple
Wave section realizes single-photon source.
To achieve the above object, the present invention is as follows using technical solution：
Day blind ultraviolet single-photon source, structure design are：It is provided on substrate by wide bandgap semiconductor p-type layer, i type sheets
The quantum dot embedding pin nano wires or quantum dot embedding pin films that layer, single quantum dot and n-layer are constituted are levied, in quantum dot embedding
The both ends of pin nano wires or quantum dot embedding pin films levels are p-type electrode and n-type electrode respectively.
The material of the substrate includes but not limited to insulator, semiconductor, metal.For from the upward light extraction of substrate face
Single-photon source, in order to may be used and the congener semiconductor material of nano wire suitable for the epitaxial growth of quantum dot and nano wire
Material, in order to improve front light extraction efficiency can be used to emit light high reflectance metal material or plate highly reflecting films on substrate；
For the single-photon source across the downward light extraction of substrate, anti-reflection is plated using to the transparent isolation material of transmitting light, and in substrate back
Film is to improve light extraction efficiency.
Wide bandgap semiconductor p-type layer, i types intrinsic layer, single quantum dot and the n-layer is all made of broadband and is more than 4.43
The semi-conducting material of eV, corresponding launch wavelength are less than 280 nm, and the type of semiconductor material of use includes but not limited to
AlGaN、InAlN、InAlGaN、AlN、BN、Ga2O3, ZnMgO, MgO, ZnBeO, MgS, BeS, diamond.It partly leads these broad stopbands
The exciton bind energy of body quantum dot is usually larger, is suitable for room temperature or even high temperature single photon emission.
Wide bandgap semiconductor p-type layer, i types intrinsic layer and the n-layer is all made of energy gap more than single quantum dot
Semi-conducting material, to form class quantum well structure to enhance the quantum confinement to single quantum dot.The size of the single quantum dot
No more than the Exciton Bohr Radius in the semi-conducting material for constituting single quantum dot discrete energy is formed to generate quantum limitation effect
Grade.
The quantum dot embedding pin nano wires can be that be directly upright in substrate can also be to have grown under stripping
To lie low on substrate after shifting.For the quantum dot embedding pin nano wires of vertical substrates, the single photon hair of vertical substrates is generated
It penetrates, can be used for free space single-photon source；For lying low in the quantum dot embedding pin nano wires of substrate, by with waveguide coupling
Conjunction can generate the single photon emission for being parallel to substrate, can be used on piece and integrate single-photon source.
Metal, metalloid thin film or transparent conductive film can be used in the p-type electrode and n-type electrode, is partly led with broad stopband
Body p-type layer and n-layer form good ohmic contact, realize electrical pumping.Used electrode material include but not limited to Au, Ti,
Al, Pt, Ni, Cr, graphene, ITO and their alloy.For being upright in the quantum dot embedding pin nano wires of substrate, adopt
Etch table top, after gap around nano wire being filled and led up with SOG insulating layers to do electrode in nano wire upper and lower ends；For flat
The nano wire lain on substrate directly does electrode at its both ends.For optical pumping mode, then electrode can not need.
Beneficial effects of the present invention are as follows：
1, the present invention is more than the semiconductor material with wide forbidden band of 4.43 eV using energy gap, and it is small that launch wavelength may be implemented
In the single-photon source of 280 nm, to have the foreground in day blind ultraviolet band application；These wide bandgap semiconductor quantum dots
Exciton bind energy is usually larger, is suitable for room temperature or even high temperature single photon emission.
2, day proposed by the present invention blind ultraviolet single-photon source is equal for the quantum dot in the quantum dot and film in nano wire
It is applicable in；Both the single-photon source that vertical substrates transmitting can have been formed can also be formed in parallel with the single-photon source of substrate transmitting, therefore
It can be used to free space single-photon source and can also be used for the integrated single-photon source of on piece；
3, day proposed by the present invention blind ultraviolet single-photon source is applicable in two kinds of mode of excitation of optical pumping and electric pump.
Description of the drawings
Fig. 1 be lie low in the AlGaN quantum dot embedding nano wire days blind single-photon source structural schematic diagram of substrate, wherein：101
For Si substrates；121 be p-type Al0.6Ga0.4N nano wires；122 be i types Al0.6Ga0.4N layers；123 be Al0.4Ga0.6N single quantum dots；
124 be N-shaped Al0.6Ga0.4N nano wires；103 be p-type Au/Ti electrodes；104 be N-shaped Au/Ni electrodes；
Fig. 2 is InAlN quantum dot embedding InAlGaN film days blind single-photon source structural schematic diagram, wherein：201 serve as a contrast for AlN
Bottom；221 be p-type In0.1Al0.7Ga0.2N thin film；222 be i types In0.1Al0.7Ga0.2N thin film；223 be In0.25Al0.75N quantum dots；
224 be N-shaped In0.1Al0.7Ga0.2N thin film；203 be p-type Graphene electrodes；204 be N-shaped Au/Ni electrodes；
Fig. 3 is the ZnMgO quantum dot embedding nano wire days blind single-photon source structural schematic diagram perpendicular to substrate, wherein：301
For MgO substrates；321 be p-type Zn0.6Mg0.4O nano wires；322 be i types Zn0.6Mg0.4O nano wires；323 be Zn0.4Mg0.6O quantum
Point；324 be N-shaped Zn0.6Mg0.4O nano wires；303 be p-type Graphene electrodes；304 be N-shaped Au/Ni electrodes；305 be p-type
Zn0.6Mg0.4O films；306 be SOG.
Specific implementation mode
To make present disclosure, technical solution and advantage be more clearly understood, below in conjunction with the accompanying drawings to the tool of the present invention
Body embodiment elaborates.
Embodiment 1
It is a kind of to lie low in the AlGaN quantum dot embedding nano wire days blind single-photon source of substrate, it is illustrated in fig. 1 shown below, wherein：
103 be Si substrates；121 be p-type Al0.6Ga0.4N nano wires, 500 nm of length, 40 nm of diameter；122 be i types Al0.6Ga0.4N layers,
20 nm of thickness；123 be Al0.4Ga0.6N single quantum dots, are made of Quantum Disks, and disk diameter is identical as nano wire, are 40 nm, quantum
0.5 nm of disc thickness；124 be N-shaped Al0.6Ga0.4N nano wires, 500 nm of length, 40 nm of diameter；103 be p-type Au/Ti electrodes；
104 be N-shaped Au/Ni electrodes.This AlGaN quantum dot embeddings nano wire day blind single-photon source emission wavelength in 270 nm, hair
Light direction is parallel to substrate along nano wire, can further couple to form the integrated single-photon source of on piece with waveguide, and AlGaN quantum
Point exciton bind energy is higher than 26 meV of room temperature, is suitable for high temperature single photon emission, can be used for the cores such as quantum information processing, quantum calculation
Piece.
Embodiment 2
A kind of day blind single-photon source of InAlN quantum dot embeddings InAlGaN films, is illustrated in fig. 2 shown below, wherein：201 are
AlN substrates；221 be p-type In0.1Al0.7Ga0.2N thin film, 200 nm of thickness；222 be i types In0.1Al0.7Ga0.2N thin film, thickness 10
nm；223 be In0.25Al0.75N quantum dots are grown by MBE self assembly modes, 2 nm of quantum point height, 10 nm of diameter, density
It is 108 /cm2；24 be N-shaped In0.1Al0.7Ga0.2N thin film, 100 nm of thickness；203 be p-type Graphene electrodes；204 be N-shaped Au/
Ni electrodes.Day blind 256 nm of single-photon source launch wavelength of this InAlN quantum dot embeddings InAlGaN films, preparation process without
Electron beam lithography is needed, technique is simpler, and light emission direction can be used for free space single-photon source perpendicular to substrate, also can be with optical fiber
Coupling.
Embodiment 3
A kind of ZnMgO quantum dot embedding nano wire days blind single-photon source perpendicular to substrate is illustrated in fig. 3 shown below, wherein：
301 be MgO substrates；321 be p-type Zn0.6Mg0.4O nano wires, 300 nm of length, 50 nm of diameter；322 be i types Zn0.6Mg0.4O receives
Rice noodles, 10 nm of length, 50 nm of diameter；323 be Zn0.4Mg0.6O quantum dots, thickness are 2 atomic layers, diameter and nano wire one
It causes, is 50 nm；324 be N-shaped Zn0.6Mg0.4O nano wires, 100 nm of length, 50 nm of diameter；3 be p-type Graphene electrodes；304
For N-shaped Au/Ni electrodes；305 be p-type Zn0.6Mg0.4O films；306 be SOG.This ZnMgO quantum dot embeddings perpendicular to substrate
Nano wire day blind 205 nm of single-photon source launch wavelength, and its position is controllable.
The above embodiment is only the preferred case of the present invention, and the interest field that the present invention is advocated is not limited to these
Embodiment, any modification for not departing from the spirit and scope of the present invention, deformation should all belong to the scope of protection of the present invention.
Claims (10)
1. day blind ultraviolet single-photon source, it is characterised in that：It is described including the quantum dot embedding pin nano wires on substrate and substrate
Quantum dot embedding pin nano wires include that wide bandgap semiconductor p-type layer, i types intrinsic layer, single quantum dot and n-layer are constituted, the width
Bandgap semiconductor p-type layer, n-layer are located at the both sides of i type intrinsic layers, and single quantum dot is embedded into i type intrinsic layers；In quantum
It is p-type electrode and n-type electrode respectively that point, which is embedded into the both ends of pin nano wires,.
2. day blind ultraviolet single-photon source, it is characterised in that：It is described including the quantum dot embedding pin nano wires on substrate and substrate
Quantum dot embedding pin films include that wide bandgap semiconductor p-type layer, i types intrinsic layer, single quantum dot and n-layer are constituted, the wide taboo
The both sides of i type intrinsic layers are located at semiconductor p-type layer, n-layer, single quantum dot is embedded into i type intrinsic layers；The quantum
It is p-type electrode and n-type electrode respectively that point, which is embedded into the levels of pin films,.
3. day blind ultraviolet single-photon source according to claim 1 or 2, it is characterised in that：The material of the substrate is using exhausted
Edge body, semiconductor or metal.
4. day blind ultraviolet single-photon source according to claim 1 or 2, it is characterised in that：The wide bandgap semiconductor p-type
The broadband for the semi-conducting material that layer, i types intrinsic layer, single quantum dot and n-layer use is more than 4.43 eV, corresponding launch wavelength
Less than 280 nm.
5. day blind ultraviolet single-photon source according to claim 4, it is characterised in that：The type of the semi-conducting material uses
AlGaN、InAlN、InAlGaN、AlN、BN、Ga2O3, ZnMgO, MgO, ZnBeO, MgS, BeS or diamond.
6. day blind ultraviolet single-photon source according to claim 1 or claim 2, it is characterised in that：The wide bandgap semiconductor p-type layer, i
Type intrinsic layer and n-layer are all made of the semi-conducting material that energy gap is more than quantum dot, are formed to the quantum to single quantum dot
The class quantum well structure of limitation.
7. day blind ultraviolet single-photon source according to claim 1 or claim 2, it is characterised in that：The size of the single quantum dot is less than
Or discrete energy is formed to generate quantum limitation effect equal to the Exciton Bohr Radius in the semi-conducting material for constituting single quantum dot
Grade.
8. day blind ultraviolet single-photon source according to claim 1 or claim 2, it is characterised in that：The quantum dot embedding pin nano wires
It is upright on substrate, light emission direction is perpendicular to substrate.
9. day blind ultraviolet single-photon source according to claim 1 or claim 2, it is characterised in that：The quantum dot embedding pin nano wires
It is to lie low on substrate, light emission direction is parallel to substrate.
10. day blind ultraviolet single-photon source according to claim 1 or claim 2, it is characterised in that：The p-type electrode and n-type electrode
Using metal, metalloid thin film or transparent conductive film, p-type electrode and n-type electrode respectively with wide bandgap semiconductor p-type layer, n-layer
Ohmic contact is formed, realizes electrical pumping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721793763.1U CN207691196U (en) | 2017-12-20 | 2017-12-20 | Day blind ultraviolet single-photon source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721793763.1U CN207691196U (en) | 2017-12-20 | 2017-12-20 | Day blind ultraviolet single-photon source |
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| Publication Number | Publication Date |
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| CN207691196U true CN207691196U (en) | 2018-08-03 |
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| CN201721793763.1U Expired - Fee Related CN207691196U (en) | 2017-12-20 | 2017-12-20 | Day blind ultraviolet single-photon source |
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| Country | Link |
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2017
- 2017-12-20 CN CN201721793763.1U patent/CN207691196U/en not_active Expired - Fee Related
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