CN207552434U - 一种用于太阳能电池的溅射镀膜装置 - Google Patents
一种用于太阳能电池的溅射镀膜装置 Download PDFInfo
- Publication number
- CN207552434U CN207552434U CN201721752635.2U CN201721752635U CN207552434U CN 207552434 U CN207552434 U CN 207552434U CN 201721752635 U CN201721752635 U CN 201721752635U CN 207552434 U CN207552434 U CN 207552434U
- Authority
- CN
- China
- Prior art keywords
- target
- blocking unit
- substrate
- coating device
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007747 plating Methods 0.000 title abstract 2
- 230000000903 blocking effect Effects 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000013077 target material Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 238000009776 industrial production Methods 0.000 description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721752635.2U CN207552434U (zh) | 2017-12-14 | 2017-12-14 | 一种用于太阳能电池的溅射镀膜装置 |
EP18185313.6A EP3498881A3 (en) | 2017-12-14 | 2018-07-24 | Sputter coating device and method for solar cell |
US16/133,319 US20190189830A1 (en) | 2017-12-14 | 2018-09-17 | Sputter coating device and method for solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721752635.2U CN207552434U (zh) | 2017-12-14 | 2017-12-14 | 一种用于太阳能电池的溅射镀膜装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207552434U true CN207552434U (zh) | 2018-06-29 |
Family
ID=62663455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201721752635.2U Expired - Fee Related CN207552434U (zh) | 2017-12-14 | 2017-12-14 | 一种用于太阳能电池的溅射镀膜装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190189830A1 (zh) |
EP (1) | EP3498881A3 (zh) |
CN (1) | CN207552434U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110684953A (zh) * | 2018-07-05 | 2020-01-14 | 北京铂阳顶荣光伏科技有限公司 | 带遮挡的溅射沉积装置及方法 |
CN113640853A (zh) * | 2021-07-16 | 2021-11-12 | 中国原子能科学研究院 | 一种用于测量高注量率热中子裂变电离室的靶结构 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3904503A (en) * | 1974-05-31 | 1975-09-09 | Western Electric Co | Depositing material on a substrate using a shield |
EP0041083A1 (en) * | 1980-05-30 | 1981-12-09 | Matsushita Electric Industrial Co., Ltd. | Method of making a thin film |
DE3400843A1 (de) * | 1983-10-29 | 1985-07-18 | VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen | Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens |
JPS60197869A (ja) * | 1984-03-17 | 1985-10-07 | Rohm Co Ltd | スパツタ装置 |
US5135581A (en) * | 1991-04-08 | 1992-08-04 | Minnesota Mining And Manufacturing Company | Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas |
US6488824B1 (en) * | 1998-11-06 | 2002-12-03 | Raycom Technologies, Inc. | Sputtering apparatus and process for high rate coatings |
JP2000238178A (ja) * | 1999-02-24 | 2000-09-05 | Teijin Ltd | 透明導電積層体 |
US6409890B1 (en) * | 1999-07-27 | 2002-06-25 | Applied Materials, Inc. | Method and apparatus for forming a uniform layer on a workpiece during sputtering |
JP2002020142A (ja) * | 2000-06-29 | 2002-01-23 | Nippon Sheet Glass Co Ltd | 車両用窓ガラスおよびその製造方法 |
EP1556902A4 (en) * | 2002-09-30 | 2009-07-29 | Miasole | MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE |
US7879201B2 (en) * | 2003-08-11 | 2011-02-01 | Veeco Instruments Inc. | Method and apparatus for surface processing of a substrate |
US7091689B2 (en) * | 2004-05-28 | 2006-08-15 | Datech Technology Co., Ltd. | Driving circuit for a two-phase DC brushless fan motor |
US8845866B2 (en) * | 2005-12-22 | 2014-09-30 | General Electric Company | Optoelectronic devices having electrode films and methods and system for manufacturing the same |
JP5882934B2 (ja) * | 2012-05-09 | 2016-03-09 | シーゲイト テクノロジー エルエルシー | スパッタリング装置 |
US9410236B2 (en) * | 2012-11-29 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sputtering apparatus and method |
-
2017
- 2017-12-14 CN CN201721752635.2U patent/CN207552434U/zh not_active Expired - Fee Related
-
2018
- 2018-07-24 EP EP18185313.6A patent/EP3498881A3/en not_active Withdrawn
- 2018-09-17 US US16/133,319 patent/US20190189830A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110684953A (zh) * | 2018-07-05 | 2020-01-14 | 北京铂阳顶荣光伏科技有限公司 | 带遮挡的溅射沉积装置及方法 |
CN113640853A (zh) * | 2021-07-16 | 2021-11-12 | 中国原子能科学研究院 | 一种用于测量高注量率热中子裂变电离室的靶结构 |
CN113640853B (zh) * | 2021-07-16 | 2024-05-10 | 中国原子能科学研究院 | 一种用于测量高注量率热中子裂变电离室的靶结构 |
Also Published As
Publication number | Publication date |
---|---|
EP3498881A2 (en) | 2019-06-19 |
US20190189830A1 (en) | 2019-06-20 |
EP3498881A3 (en) | 2019-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105355676B (zh) | 一种柔性cigs薄膜太阳电池的背电极结构 | |
CN102242345B (zh) | 一种直接制备绒面氧化锌透明导电薄膜的方法 | |
CN207552434U (zh) | 一种用于太阳能电池的溅射镀膜装置 | |
CN106319473B (zh) | Cigs太阳能电池薄膜生产线 | |
CN106684184B (zh) | 一种铜铟镓硒薄膜太阳能电池窗口层及其制备方法 | |
CN103898450B (zh) | 一种铜铟镓硒共蒸发线性源装置及其使用方法 | |
Menner et al. | Application of indium zinc oxide window layers in Cu (In, Ga) Se2 solar cells | |
Seok et al. | Plasma damage-free deposition of transparent Sn-doped In2O3 top cathode using isolated plasma soft deposition for perovskite solar cells | |
CN108456847A (zh) | 在多晶czt上沉积dlc膜的方法及czt半导体探测器 | |
CN204230256U (zh) | 低发射比的选择性太阳能热吸收涂层 | |
WO2013129297A1 (ja) | 化合物太陽電池の製法 | |
Zhu et al. | DC and RF sputtered molybdenum electrodes for Cu (In, Ga) Se2 thin film solar cells | |
Shin et al. | Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode | |
CN208167086U (zh) | 一种锡锌铝电容器用金属化薄膜蒸镀机 | |
CN106119795A (zh) | 利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法 | |
US20110192463A1 (en) | Cigs solar cell structure and method for fabricating the same | |
Wang et al. | Enhancing Electrical and Physical Contacts of Copper‐Electroplated Silicon Heterojunction Solar Cells through Chemical Pretreated Seed Layers | |
Li et al. | Preparation and characterization of ZnO/Cu/ZnO transparent conductive films | |
Perkins et al. | Amorphous transparent conductors for PV applications | |
CN205452307U (zh) | 一种黑硅太阳电池片的封装结构 | |
CN205258602U (zh) | 一种太阳能电池管式pecvd设备 | |
CN105226119A (zh) | 一种薄膜太阳能电池组件 | |
CN109545869A (zh) | 一种双面三端子的柔性碲化镉太阳电池 | |
CN109536899A (zh) | 一种新型cigs电极用钛合金复合靶材镀膜及其制备方法 | |
CN220402262U (zh) | 一种全真空制程异质结反式钙钛矿叠层太阳能电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181227 Address after: 037000 No. 7899 on the north side of the East extension of Yunzhou Street, Datong City, Shanxi Province Patentee after: SHANXI MIASOLECHINA EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 362000 No. 42 Zishan Road, Licheng District, Quanzhou City, Fujian Province Patentee before: MIASOLE EQUIPMENT INTEGRATION (FUJIAN) Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221117 Address after: Room 229, Annex Building, No. 111, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Province, 510663 (office only) Patentee after: Hanwa Technology Co.,Ltd. Address before: 037000 No. 7899 on the north side of the East extension of Yunzhou Street, Datong City, Shanxi Province Patentee before: SHANXI MIASOLECHINA EQUIPMENT TECHNOLOGY Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180629 |