Nothing Special   »   [go: up one dir, main page]

CN207552434U - 一种用于太阳能电池的溅射镀膜装置 - Google Patents

一种用于太阳能电池的溅射镀膜装置 Download PDF

Info

Publication number
CN207552434U
CN207552434U CN201721752635.2U CN201721752635U CN207552434U CN 207552434 U CN207552434 U CN 207552434U CN 201721752635 U CN201721752635 U CN 201721752635U CN 207552434 U CN207552434 U CN 207552434U
Authority
CN
China
Prior art keywords
target
blocking unit
substrate
coating device
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201721752635.2U
Other languages
English (en)
Inventor
朱朋建
孙红霞
胡超
舒毅
潘登
陈凡
徐国军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hanwa Technology Co ltd
Original Assignee
Miasole Equipment Integration Fujian Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Miasole Equipment Integration Fujian Co Ltd filed Critical Miasole Equipment Integration Fujian Co Ltd
Priority to CN201721752635.2U priority Critical patent/CN207552434U/zh
Application granted granted Critical
Publication of CN207552434U publication Critical patent/CN207552434U/zh
Priority to EP18185313.6A priority patent/EP3498881A3/en
Priority to US16/133,319 priority patent/US20190189830A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/129Passivating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3447Collimators, shutters, apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/347Thickness uniformity of coated layers or desired profile of target erosion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/137Batch treatment of the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

本实用新型公开了一种用于太阳能电池的溅射镀膜装置,包括:用于向衬底溅射的靶材;位于所述靶材与所述衬底之间的阻挡单元,所述阻挡单元在所述衬底上的正投影与所述靶材在所述衬底上的正投影部分重合。通过在靶材与衬底之间设置阻挡单元,可通过阻挡单元对靶材特定部位进行阻挡,使得被阻挡部位溅射到衬底上形成膜层的厚度得以降低,即通过灵活设置阻挡单元的位置,使得衬底上溅射形成的膜层厚度一致性较好,提高膜层的均匀性,从而满足产业化生产的实际需要。

Description

一种用于太阳能电池的溅射镀膜装置
技术领域
本实用新型涉及太阳能电池加工领域,尤其涉及一种用于太阳能电池的溅射镀膜装置。
背景技术
柔性衬底铜铟镓硒(CIGS)薄膜太阳能电池具有质量轻、抗辐射能力强、稳定性好等优势。其与卷对卷(roll to roll)技术相结合,适于大规模生产,可显著降低材料成本和制造成本。
窗口层既是CIGS太阳能电池异质结n型区的核心部分,又是电池功率输出的主要通道。窗口层即为溅射在衬底上的膜层,窗口层的均匀性对电池转换效率和产品良率尤为重要。在实际产业化生产过程中,由于靶材特性,溅射气体分布以及靶内磁场分布等原因,所制备的窗口层厚度均匀性不理想。通过在镀膜后的衬底上测量窗口层厚度,可以看到该膜层厚度中间部分偏厚,上下两边偏薄,均匀性偏差较大,不能满足产业化生产的实际需要。
实用新型内容
本实用新型的目的是提供一种用于太阳能电池的溅射镀膜装置,以解决现有技术中的问题,提高衬底上膜层的均匀度。
本实用新型提供了一种用于太阳能电池的溅射镀膜装置,所述用于太阳能电池的溅射镀膜装置包括:
用于向衬底溅射的靶材;
位于所述靶材与所述衬底之间的阻挡单元,所述阻挡单元在所述衬底上的正投影与所述靶材在所述衬底上的正投影部分重合。
作为优选,所述阻挡单元相对所述靶材固定,且所述阻挡单元在所述靶材上的正投影位于所述靶材的中部。
作为优选,所述阻挡单元的长度占所述靶材长度的50%-75%。
作为优选,所述靶材设置有四块,四块靶材沿着一字排列,所述阻挡单元设置在排列方向上位于末端的靶材处。
作为优选,所述用于太阳能电池的溅射镀膜装置还包括用于容纳所述靶材的靶仓。
作为优选,所述靶仓内设置有用于容纳所述靶材的容纳槽,所述靶仓靠近衬底的一侧设置有与所述容纳槽连通的开口。
作为优选,所述阻挡单元固定在所述靶仓设有所述开口的一侧,且所述阻挡单元覆盖在所述开口的中部。
作为优选,所述阻挡单元通过螺钉固定在所述靶仓上。
作为优选,所述阻挡单元的宽度大于等于所述开口的宽度,且所述阻挡单元的长度占所述开口长度的50%-75%。
作为优选,所述阻挡单元为挡板,所述挡板上设置有防腐蚀膜层。
本实用新型提供的用于太阳能电池的溅射镀膜装置,通过在靶材与衬底之间设置阻挡单元,可通过阻挡单元对靶材特定部位进行阻挡,使得被阻挡部位溅射到衬底上形成膜层的厚度得以降低,即通过灵活设置阻挡单元的位置,使得衬底上溅射形成的膜层厚度一致性较好,提高膜层的均匀性,从而满足产业化生产的实际需要。
附图说明
图1为本实用新型实施例提供的用于太阳能电池的溅射镀膜装置的俯视图;
图2为本实用新型又一实施例提供的用于太阳能电池的溅射镀膜装置的正视图。
附图标记说明:
1-靶材,2-阻挡单元,3-衬底,4-靶仓,5-螺钉。
具体实施方式
下面详细描述本实用新型的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本实用新型,而不能解释为对本实用新型的限制。
如图1所示,也可参见图2,本实用新型实施例提供了一种用于太阳能电池的溅射镀膜装置,所述用于太阳能电池的溅射镀膜装置包括:
用于向衬底3溅射的靶材1;
位于所述靶材1与所述衬底3之间的阻挡单元2,所述阻挡单元2在所述衬底3上的正投影与所述靶材1在所述衬底3上的正投影部分重合。
本实用新型提供的用于太阳能电池的溅射镀膜装置,通过在靶材1与衬底3之间设置阻挡单元2,可通过阻挡单元2对靶材1特定部位进行阻挡,使得被阻挡部位溅射到衬底3上形成膜层的厚度得以降低,即对原本衬底3上形成的膜层的较厚部位对应的靶材1上的部位,通过阻挡单元2进行阻挡,从而使得被阻挡部位与非阻挡部位在衬底3上溅射形成的膜层的厚度趋于一致。
本实用新型实施例可通过灵活设置阻挡单元2的位置,使得衬底3上溅射形成的膜层厚度一致性较好,提高膜层的均匀性,从而满足产业化生产的实际需要。
作为优选,所述阻挡单元2相对所述靶材1固定,且所述阻挡单元2在所述靶材1上的正投影位于所述靶材1的中部。作为优选,所述阻挡单元2靠近所述靶材1设置,且所述阻挡单元2与所述靶材1的中间部位正对。作为优选,所述阻挡单元2的长度占所述靶材1长度的50%-75%。
其中,本实用新型实施例中,将阻挡单元2靠近靶材1设置,也可以不靠近设置,而只是投影位于靶材1中部,目的是对靶材1中部进行阻挡即可;一般阻挡单元2的长度占靶材1长度的75%,即两端各余15%不进行阻挡,如此能够对衬底3上形成的膜层的中部位置(原本厚度较厚)进行重点阻挡,使得该部位膜层厚度得以降低,从而使膜层整体厚度均匀;而靶材1与阻挡单元2的形状不做限制,阻挡单元2只要能够进行部分阻挡即可。
作为优选,所述阻挡单元2也可靠近所述衬底3设置,且所述阻挡单元2与所述衬底3的中间部位正对。作为优选,所述阻挡单元2的长度占所述衬底3长度的50%-75%。同样道理,本实用新型实施例中,也可将阻挡单元2靠近衬底3设置,也能够起到使膜层整体厚度均匀的目的。
本实用新型实施例中,作为优选,所述靶材1设置有四块,四块靶材1沿着一字排列,所述阻挡单元2设置在排列方向上位于末端的靶材1处,作为优选,四块靶材1依次平行设置,所述阻挡单元2设置在第四块靶材1或者第一块靶材1处。对四块靶材1中的一块进行阻挡,一般即可使得溅射的膜层厚度均匀;当然,本领域技术人员可知,靶材1的数量、被阻挡靶材1的数量、以及阻挡单元2的数量均不限定,根据实际情况灵活设置。
作为优选,所述用于太阳能电池的溅射镀膜装置还包括用于容纳所述靶材1的靶仓4。作为优选,所述靶仓4内设置有用于容纳所述靶材1的容纳槽,所述容纳槽上靠近衬底3的一侧设置有与所述容纳槽连通的开口,所述靶材1穿过所述开口向衬底3溅射。作为优选,所述阻挡单元2固定在所述靶仓4设有所述开口的一侧,且所述阻挡单元2覆盖在所述开口的中部。作为优选,所述阻挡单元2通过螺钉5固定在所述靶仓4上。作为优选,所述阻挡单元2的宽度大于等于所述开口的宽度,且所述阻挡单元2的长度占所述开口长度的50%-75%。
其中,靶材1的形状多种,可为圆柱形或长方体形等等,对应的在靶仓4内设置形状一致的容纳槽,直接将靶材1插入即可;为了预留使靶材1能够直接溅射到衬底3的通道,因此在靶仓4上开设开口,开口一般位于靶材1与衬底3之间,开口的宽度要小于等于靶材1的宽度,防止靶材1从开口中漏出,而阻挡单元2的宽度大于等于所述开口的宽度,保证能够对靶材1的特定部位进行完整阻挡;靶仓4上对应位置设有销孔,可与螺钉5进行配合,用以固定阻挡单元2。
作为优选,所述阻挡单元2为挡板,所述挡板上设置有防腐蚀膜层。
其中,挡板为304奥氏体不锈钢,它具有极强的防锈、耐腐蚀性能,又有极佳的可塑性和韧性,便于加工制造。可根据实际需要改变挡板的大小和遮挡位置,实现衬底3上大面积均匀镀膜;防腐蚀层一般采用钛材料。
本申请实施例中,对设置阻挡单元2前后的情况分别进行测试,具体结果如下表:
表1设置阻挡单元前测试结果
表2设置阻挡单元后测试结果
经过研究发现,本实用新型能够显著提高衬底3上膜层的均匀性,其均匀性由90.44%提高到96.34%,可以满足产业化生产的实际需要。
以上依据图式所示的实施例详细说明了本实用新型的构造、特征及作用效果,以上所述仅为本实用新型的较佳实施例,但本实用新型不以图面所示限定实施范围,凡是依照本实用新型的构想所作的改变,或修改为等同变化的等效实施例,仍未超出说明书与图示所涵盖的精神时,均应在本实用新型的保护范围内。

Claims (10)

1.一种用于太阳能电池的溅射镀膜装置,其特征在于,所述用于太阳能电池的溅射镀膜装置包括:
用于向衬底溅射的靶材;
位于所述靶材与所述衬底之间的阻挡单元,所述阻挡单元在所述衬底上的正投影与所述靶材在所述衬底上的正投影部分重合。
2.根据权利要求1所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元相对所述靶材固定,且所述阻挡单元在所述靶材上的正投影位于所述靶材的中部。
3.根据权利要求2所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元的长度占所述靶材长度的50%-75%。
4.根据权利要求1所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述靶材设置有四块,四块靶材沿着一字排列,所述阻挡单元设置在排列方向上位于末端的靶材处。
5.根据权利要求1所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述用于太阳能电池的溅射镀膜装置还包括用于容纳所述靶材的靶仓。
6.根据权利要求5所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述靶仓内设置有用于容纳所述靶材的容纳槽,所述靶仓靠近衬底的一侧设置有与所述容纳槽连通的开口。
7.根据权利要求6所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元固定在所述靶仓设有所述开口的一侧,且所述阻挡单元覆盖在所述开口的中部。
8.根据权利要求7所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元通过螺钉固定在所述靶仓上。
9.根据权利要求8所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元的宽度大于等于所述开口的宽度,且所述阻挡单元的长度占所述开口长度的50%-75%。
10.根据权利要求1-9任一项所述的用于太阳能电池的溅射镀膜装置,其特征在于,所述阻挡单元为挡板,所述挡板上设置有防腐蚀膜层。
CN201721752635.2U 2017-12-14 2017-12-14 一种用于太阳能电池的溅射镀膜装置 Expired - Fee Related CN207552434U (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201721752635.2U CN207552434U (zh) 2017-12-14 2017-12-14 一种用于太阳能电池的溅射镀膜装置
EP18185313.6A EP3498881A3 (en) 2017-12-14 2018-07-24 Sputter coating device and method for solar cell
US16/133,319 US20190189830A1 (en) 2017-12-14 2018-09-17 Sputter coating device and method for solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721752635.2U CN207552434U (zh) 2017-12-14 2017-12-14 一种用于太阳能电池的溅射镀膜装置

Publications (1)

Publication Number Publication Date
CN207552434U true CN207552434U (zh) 2018-06-29

Family

ID=62663455

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721752635.2U Expired - Fee Related CN207552434U (zh) 2017-12-14 2017-12-14 一种用于太阳能电池的溅射镀膜装置

Country Status (3)

Country Link
US (1) US20190189830A1 (zh)
EP (1) EP3498881A3 (zh)
CN (1) CN207552434U (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110684953A (zh) * 2018-07-05 2020-01-14 北京铂阳顶荣光伏科技有限公司 带遮挡的溅射沉积装置及方法
CN113640853A (zh) * 2021-07-16 2021-11-12 中国原子能科学研究院 一种用于测量高注量率热中子裂变电离室的靶结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904503A (en) * 1974-05-31 1975-09-09 Western Electric Co Depositing material on a substrate using a shield
EP0041083A1 (en) * 1980-05-30 1981-12-09 Matsushita Electric Industrial Co., Ltd. Method of making a thin film
DE3400843A1 (de) * 1983-10-29 1985-07-18 VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens
JPS60197869A (ja) * 1984-03-17 1985-10-07 Rohm Co Ltd スパツタ装置
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体
US6409890B1 (en) * 1999-07-27 2002-06-25 Applied Materials, Inc. Method and apparatus for forming a uniform layer on a workpiece during sputtering
JP2002020142A (ja) * 2000-06-29 2002-01-23 Nippon Sheet Glass Co Ltd 車両用窓ガラスおよびその製造方法
EP1556902A4 (en) * 2002-09-30 2009-07-29 Miasole MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE
US7879201B2 (en) * 2003-08-11 2011-02-01 Veeco Instruments Inc. Method and apparatus for surface processing of a substrate
US7091689B2 (en) * 2004-05-28 2006-08-15 Datech Technology Co., Ltd. Driving circuit for a two-phase DC brushless fan motor
US8845866B2 (en) * 2005-12-22 2014-09-30 General Electric Company Optoelectronic devices having electrode films and methods and system for manufacturing the same
JP5882934B2 (ja) * 2012-05-09 2016-03-09 シーゲイト テクノロジー エルエルシー スパッタリング装置
US9410236B2 (en) * 2012-11-29 2016-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Sputtering apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110684953A (zh) * 2018-07-05 2020-01-14 北京铂阳顶荣光伏科技有限公司 带遮挡的溅射沉积装置及方法
CN113640853A (zh) * 2021-07-16 2021-11-12 中国原子能科学研究院 一种用于测量高注量率热中子裂变电离室的靶结构
CN113640853B (zh) * 2021-07-16 2024-05-10 中国原子能科学研究院 一种用于测量高注量率热中子裂变电离室的靶结构

Also Published As

Publication number Publication date
EP3498881A2 (en) 2019-06-19
US20190189830A1 (en) 2019-06-20
EP3498881A3 (en) 2019-10-30

Similar Documents

Publication Publication Date Title
CN105355676B (zh) 一种柔性cigs薄膜太阳电池的背电极结构
CN102242345B (zh) 一种直接制备绒面氧化锌透明导电薄膜的方法
CN207552434U (zh) 一种用于太阳能电池的溅射镀膜装置
CN106319473B (zh) Cigs太阳能电池薄膜生产线
CN106684184B (zh) 一种铜铟镓硒薄膜太阳能电池窗口层及其制备方法
CN103898450B (zh) 一种铜铟镓硒共蒸发线性源装置及其使用方法
Menner et al. Application of indium zinc oxide window layers in Cu (In, Ga) Se2 solar cells
Seok et al. Plasma damage-free deposition of transparent Sn-doped In2O3 top cathode using isolated plasma soft deposition for perovskite solar cells
CN108456847A (zh) 在多晶czt上沉积dlc膜的方法及czt半导体探测器
CN204230256U (zh) 低发射比的选择性太阳能热吸收涂层
WO2013129297A1 (ja) 化合物太陽電池の製法
Zhu et al. DC and RF sputtered molybdenum electrodes for Cu (In, Ga) Se2 thin film solar cells
Shin et al. Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode
CN208167086U (zh) 一种锡锌铝电容器用金属化薄膜蒸镀机
CN106119795A (zh) 利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法
US20110192463A1 (en) Cigs solar cell structure and method for fabricating the same
Wang et al. Enhancing Electrical and Physical Contacts of Copper‐Electroplated Silicon Heterojunction Solar Cells through Chemical Pretreated Seed Layers
Li et al. Preparation and characterization of ZnO/Cu/ZnO transparent conductive films
Perkins et al. Amorphous transparent conductors for PV applications
CN205452307U (zh) 一种黑硅太阳电池片的封装结构
CN205258602U (zh) 一种太阳能电池管式pecvd设备
CN105226119A (zh) 一种薄膜太阳能电池组件
CN109545869A (zh) 一种双面三端子的柔性碲化镉太阳电池
CN109536899A (zh) 一种新型cigs电极用钛合金复合靶材镀膜及其制备方法
CN220402262U (zh) 一种全真空制程异质结反式钙钛矿叠层太阳能电池

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20181227

Address after: 037000 No. 7899 on the north side of the East extension of Yunzhou Street, Datong City, Shanxi Province

Patentee after: SHANXI MIASOLECHINA EQUIPMENT TECHNOLOGY Co.,Ltd.

Address before: 362000 No. 42 Zishan Road, Licheng District, Quanzhou City, Fujian Province

Patentee before: MIASOLE EQUIPMENT INTEGRATION (FUJIAN) Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20221117

Address after: Room 229, Annex Building, No. 111, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Province, 510663 (office only)

Patentee after: Hanwa Technology Co.,Ltd.

Address before: 037000 No. 7899 on the north side of the East extension of Yunzhou Street, Datong City, Shanxi Province

Patentee before: SHANXI MIASOLECHINA EQUIPMENT TECHNOLOGY Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180629