CN207227595U - A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal - Google Patents
A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal Download PDFInfo
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- CN207227595U CN207227595U CN201721131163.9U CN201721131163U CN207227595U CN 207227595 U CN207227595 U CN 207227595U CN 201721131163 U CN201721131163 U CN 201721131163U CN 207227595 U CN207227595 U CN 207227595U
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Abstract
A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal, the main vacuum pump of the single crystal growing furnace are connected by evacuating pipeline with the bottom of furnace tube, to control main vacuum pump by evacuating the gas in pipeline extraction furnace tube；Evacuate pipeline and incoming air conduit road is connected with one end of furnace tube, incoming air conduit road is connected with air switch, to be filled with air into evacuation pipeline by the control of air switch, and then the phosphorous volatile matter of deposition in evacuation pipeline is carried out oxidation removal.The utility model increases an incoming air conduit road by evacuating the front end of pipeline in single crystal growing furnace, air switch on incoming air conduit road can be by the incoming air conduit road to evacuating input air in pipeline after opening, and then the position of the deposition volatile matter such as duct wall, filter is aoxidized, the heat accumulation that reaction produces is avoided to reach explosion limit, so as to control the burning velocity of phosphorus well, solves the problems, such as pipe explosion.
Description
Technical field
The manufacturing field of semiconductor silicon single crystal is the utility model is related to, specifically one kind is used for heavily doped phosphorus silicon single crystal
The explosion-proof single crystal growing furnace of production.
Background technology
In semicon industry, single crystal growing furnace is the important equipment of silicon monocrystal growth, and the silica crucible in single crystal growing furnace is used for holding
Polycrystalline, adds a certain amount of dopant in polycrystalline, by fusing, seeding, shouldering, turns the processes such as shoulder, isodiametric growth, ending just
The product for meeting customer requirement can be produced.With integrated circuit technique and the development of application, particularly power device is to power consumption
Requirement it is more and more lower, lower resistivity requirement is proposed to monocrystalline substrate.Solid solubility of the dopant in silicon determines
The maximum resistance rate of the type single crystalline substrate.The dopant of N-type silicon single crystal is mainly arsenic and antimony in industry at present, but mix arsenic and
After antimony element, the resistivity of gained monocrystalline silicon does not reach necessary requirement, since phosphorus has the solid solubility of bigger in silicon crystal lattice, this
The sample monocrystalline silicon lower with regard to that can obtain resistivity, so heavily doped phosphorus silicon single crystal comes into being, the market demand is increasing.But mix
Miscellaneous required red phosphorus burning point is very low, heavily doped phosphorus the monocrystalline volatilization of element dopants red phosphorus and other oxidations in doping and pulling process
Thing is deposited on furnace wall, pipeline, filter etc. together, and gas flowing or slight friction during cleaning will cause burning, burn
The heat of generation, which is collected at the confined spaces such as pipeline, can not discharge initiation explosion, thus be brought to actual work very big
It is dangerous.
Utility model content
In order to solve in existing single crystal growing furnace since the phosphorous volatile matter deposited when producing heavily doped phosphorus monocrystalline easily burns very
To the danger caused by explosion, the utility model Curve guide impeller on the basis of existing single crystal growing furnace has gone out one kind and has been used for heavily doped phosphorus silicon
Red phosphorus in volatile matter, white phosphorus can be converted into five oxidations two of stable state by the explosion-proof single crystal growing furnace of monocrystalline production, the single crystal growing furnace
Phosphorus is so as to eliminate the risk of explosion.
The utility model is that technical solution is used by solving above-mentioned technical problem：One kind is used for heavily doped phosphorus silicon single crystal and gives birth to
The explosion-proof single crystal growing furnace of production, the single crystal growing furnace include upper furnace chamber and furnace tube, and the bottom of upper furnace chamber and the bell that is arranged at the top of furnace tube
Connection, the single crystal growing furnace side are respectively arranged with main vacuum pump, secondary vacuum pump and argon gas source, wherein, main vacuum pump passes through evacuation
Pipeline is connected with the bottom of furnace tube, and is evacuated and be disposed with proportioning valve and pneumatic operated valve on pipeline, to control main vacuum pump to pass through
The gas in pipeline extraction furnace tube is evacuated, secondary vacuum pump is connected by discharge duct with the top of upper furnace chamber, to pass through exhaust pipe
The indoor gas of upper stove is extracted in the air bleeding valve control that road is equipped with, and argon gas source passes through the top of three upward furnace chambers of argon gas pipeline respectively
Argon gas is filled with portion, the middle part of upper furnace chamber and bell, and argon gas switch is both provided with three argon gas pipelines；The evacuation tube
Road is connected with incoming air conduit road on one end of furnace tube, and incoming air conduit road is connected with air switch, to pass through air switch
Control and be filled with air into evacuation pipeline, and then the phosphorous volatile matter of deposition in evacuation pipeline is carried out oxidation removal.
In the utility model, rotating head is provided with the top of the upper furnace chamber.
In the utility model, electrode and the crucible lifting equipment for lifting crucible in furnace tube are provided with the furnace tube.
In the utility model, the furnace tube is arranged on pedestal.
In the utility model, the filtering tank of filtering gas bleeding is connected with the exhaust outlet of the main vacuum pump.
In the utility model, flowmeter is provided with the incoming air conduit road.
Beneficial effect：The utility model increases an incoming air conduit road by evacuating the front end of pipeline in single crystal growing furnace, into
Air switch on air pipeline can be by the incoming air conduit road to evacuating input air in pipeline, and then to pipeline after opening
The position of the deposition volatile matter such as wall, filter is aoxidized；Power drop speed is set as 5KW/h when crystal pulling terminates and has a power failure,
Slower power drop speed can keep temperature higher in burner hearth, improve the oxidation effectiveness of sedimentary phosphor.Air mass flow is set
In the range of 10-12ml/min；Ventilation oxidization time 40 minutes；Next fire door is opened again and starts vacuum pump, is repeated open-close and is taken out
Pneumatic operated valve more than 8 times on vacant duct, per minor tick 1 minute, when unlatching, higher gas flow rate can peel off already oxidised portion
Point expose non-oxidized portion, when closing can terminate oxidation reaction, avoid the heat accumulation that reaction produces from reaching explosion
The limit, so as to control the burning velocity of phosphorus well, solves the problems, such as pipe explosion.
Brief description of the drawings
Attached drawing 1 is the structure diagram of the utility model；
Reference numeral：1st, air switch, 2, flowmeter, 3, pneumatic operated valve, 4, proportioning valve, 5, argon gas switch, 6, rotating head,
7th, upper furnace chamber, 8, bell, 9, furnace tube, 10, argon gas source, 11, secondary vacuum pump, 12, incoming air conduit road, 13, air bleeding valve, 14, argon gas
Pipeline, 15, discharge duct, 16, electrode, 17, crucible lifting equipment, 18, pedestal, 19, main vacuum pump, 20, evacuate pipeline.
Embodiment
Technological means, creation characteristic, reached purpose and beneficial effect to realize the utility model are readily apparent from
Solution, the following further describes the utility model with specific embodiments.
As shown in the figure, a kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal, which includes upper furnace chamber 7 and stove
Cylinder 9, and the bottom of upper furnace chamber 7 is connected with being arranged on the bell 8 at the top of furnace tube 9, the single crystal growing furnace side is respectively arranged with main true
Sky pump 19, secondary vacuum pump 11 and argon gas source 10, wherein, main vacuum pump 19 is connected by evacuating pipeline 20 with the bottom of furnace tube 9, and
Evacuate and be disposed with proportioning valve 4 and pneumatic operated valve 3 on pipeline 20, to control main vacuum pump 19 to extract furnace tube by evacuating pipeline 20
Gas in 9, secondary vacuum pump 11 is connected by discharge duct 15 with the top of upper furnace chamber 7, to be equipped with by discharge duct 15
The control of air bleeding valve 13 extract gas in upper furnace chamber 7, argon gas source 10 passes through the top of the upward furnace chamber 7 of three argon gas pipelines 14 respectively
Argon gas is filled with portion, the middle part of upper furnace chamber 7 and bell 8, and argon gas switch 5 is both provided with three argon gas pipelines 14；It is described
Evacuate pipeline 20 and incoming air conduit road 12 is connected with one end of furnace tube 9, flowmeter 2 is provided with incoming air conduit road 12, into
Air pipeline 12 is connected with air switch 1, to be filled with air into evacuation pipeline 20 by the control of air switch 1, and then is made
The phosphorous volatile matter for evacuating deposition in pipeline 20 carries out oxidation removal.
Above be the utility model basic embodiment, can more than on the basis of further improved, optimized and limited
It is fixed：
Such as, the top of upper furnace chamber 7 is provided with rotating head 6；
And for example, electrode 16 and the crucible lifting equipment 17 for lifting crucible in furnace tube 9 are provided with the furnace tube 9；
For another example, the furnace tube 9 is arranged on pedestal 18；
Finally, the filtering tank of filtering gas bleeding is connected with the exhaust outlet of the main vacuum pump 19.
The step of the utility model is when removing phosphorous volatile matter is as follows：
1）Crystal bar is lifted by equipment operation interface after ending, opens air switch 1, then growth selection program into
Enter automatic blowing out state, it is 5km/h that automatic downtime schedule, which sets power drop speed, confirms the stream on incoming air conduit road 12 at this time
2 flow indication of gauge is in 10-12ml/min；At this time, the argon gas in lower three argon gas pipelines 14 of the automatic blowing out state of single crystal growing furnace is opened
Pneumatic operated valve 3, the proportioning valve 4 for close 5, evacuating on pipeline 20 are open modes, remaining valve Close All；
2）By closing air switch 1 after 12 recent 2h of incoming air conduit road, option program enters automatic leak detection state, that is, closes
The table leak detection that whole valve switch are carried out under Warm status is closed to operate；
3）Air switch 1 is again turned on after leak detection end of operation, while opens pneumatic operated valve 3 and proportioning valve 4 and carries out air and put
Change 1 it is small when, air is discharged by main vacuum pump 19 from evacuating pipeline 20 after entering along incoming air conduit road 12, in the process, empty
Primary Oxidation is carried out to the phosphorous volatile matter deposited in its inner wall when gas is through evacuating pipeline 20, the time of Primary Oxidation is 1h, and
Air switch 1 and pneumatic operated valve 3 are closed afterwards, are opened and are filled with the argon gas 5 upward furnace chambers 7 and bell 8 of switch of three argon gas pipelines 14
Argon gas, treats that the pressure in furnace chamber 7 and furnace tube 9 reaches 760 Torrs（Torr it is the transliteration of English pressure unit torr）When, close argon gas
Switch 5, opens fire door；
4）After oven door opening, adjust proportioning valve 4 and be in fully open state, closed after being then turned on 3 half a minute of pneumatic operated valve
Pneumatic operated valve 3 two minutes；
5）Repeat above-mentioned unlatching pneumatic operated valve 3 and close the operation 8 times of pneumatic operated valve 3, so as to evacuate pipeline 20 in main vacuum pump
19 and stove in air pressure double action under formed high-speed flow from evacuate pipeline 20 discharge, make deposition under the impact of high-speed flow
Thicker phosphorus sedimentary is able to layering oxidation, contains phosphorous oxides as air-flow is discharged after oxidation；
6）Pneumatic operated valve 3 is closed, main vacuum pump 19 is cut off and completes removing to phosphorous volatile matter.
The ending described in oxidation removing technique, leak detection are routine operation above.
Technique is removed by the oxidation of the present invention, can realize the people of counterweight p-doped single crystal growing furnace pipeline deposit burning velocity
In order to control, explosion issues during pipe-line purging are solved, and the technique will not produce any adverse effect to monocrystalline amount.
The advantages of main feature, basic principle and the utility model of the utility model has been shown and described above.This
Industry technology personnel are it should be appreciated that the present utility model is not limited to the above embodiments, described in above embodiments and description
Simply illustrate the utility model principle, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
There can be various changes and modifications according to actual conditions, these changes and improvements both fall within claimed the scope of the utility model
It is interior.The protection scope of the present invention is defined by the appended claims and their equivalents.
Claims (6)
1. a kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal, which includes upper furnace chamber（7）And furnace tube（9）, and
Upper furnace chamber（7）Bottom and be arranged on furnace tube（9）The bell at top（8）Connection, it is characterised in that：The single crystal growing furnace side difference
It is provided with main vacuum pump（19）, secondary vacuum pump（11）And argon gas source（10）, wherein, main vacuum pump（19）By evacuating pipeline（20）
With furnace tube（9）Bottom connection, and evacuate pipeline（20）On be disposed with proportioning valve（4）And pneumatic operated valve（3）, it is main true with control
Sky pump（19）By evacuating pipeline（20）Extract furnace tube（9）Interior gas, secondary vacuum pump（11）Pass through discharge duct（15）With it is upper
Furnace chamber（7）Top connection, to pass through discharge duct（15）The air bleeding valve being equipped with（13）Upper furnace chamber is extracted in control（7）Interior gas
Body, argon gas source（10）Pass through three argon gas pipelines respectively（14）Upward furnace chamber（7）Top, upper furnace chamber（7）Middle part and bell
（8）Argon gas is inside filled with, and in three argon gas pipelines（14）On be both provided with argon gas switch（5）；The evacuation pipeline（20）It is close
Furnace tube（9）One end on be connected with incoming air conduit road（12）, incoming air conduit road（12）With air switch（1）Connection, to pass through sky
Air cock（1）Control to evacuate pipeline（20）In be filled with air, and then make evacuation pipeline（20）The phosphorous volatile matter of interior deposition
Carry out oxidation removal.
A kind of 2. explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal according to claim 1, it is characterised in that：It is described
Upper furnace chamber（7）Top is provided with rotating head（6）.
A kind of 3. explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal according to claim 1, it is characterised in that：It is described
Furnace tube（9）Inside it is provided with electrode（16）With for lifting furnace tube（9）The crucible lifting equipment of interior crucible（17）.
A kind of 4. explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal according to claim 1, it is characterised in that：It is described
Furnace tube（9）It is arranged on pedestal（18）On.
A kind of 5. explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal according to claim 1, it is characterised in that：It is described
Main vacuum pump（19）Exhaust outlet on be connected with filtering gas bleeding filtering tank.
A kind of 6. explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal according to claim 1, it is characterised in that：It is described
Incoming air conduit road（12）On be provided with flowmeter（2）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721131163.9U CN207227595U (en) | 2017-09-05 | 2017-09-05 | A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721131163.9U CN207227595U (en) | 2017-09-05 | 2017-09-05 | A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal |
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| CN207227595U true CN207227595U (en) | 2018-04-13 |
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| CN201721131163.9U Active CN207227595U (en) | 2017-09-05 | 2017-09-05 | A kind of explosion-proof single crystal growing furnace for the production of heavily doped phosphorus silicon single crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172598A (en) * | 2020-01-10 | 2020-05-19 | 郑州合晶硅材料有限公司 | Vacuum pumping method for preventing dust explosion in production of phosphorus-doped monocrystalline silicon and production method of phosphorus-doped monocrystalline silicon using vacuum pumping method |
-
2017
- 2017-09-05 CN CN201721131163.9U patent/CN207227595U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172598A (en) * | 2020-01-10 | 2020-05-19 | 郑州合晶硅材料有限公司 | Vacuum pumping method for preventing dust explosion in production of phosphorus-doped monocrystalline silicon and production method of phosphorus-doped monocrystalline silicon using vacuum pumping method |
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Address after: 471000 No. 99 Binhe North Road, Luoyang hi tech Industrial Development Zone, Henan Patentee after: Mesk Electronic Materials Co., Ltd Address before: 471000 No. 99 Binhe North Road, Luoyang hi tech Industrial Development Zone, Henan, Luoyang Patentee before: MCL ELECTRONIC MATERIALS Ltd. |