CN206003801U - A kind of epitaxial wafer for flip LED chips - Google Patents
A kind of epitaxial wafer for flip LED chips Download PDFInfo
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- CN206003801U CN206003801U CN201620972691.6U CN201620972691U CN206003801U CN 206003801 U CN206003801 U CN 206003801U CN 201620972691 U CN201620972691 U CN 201620972691U CN 206003801 U CN206003801 U CN 206003801U
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Abstract
A kind of epitaxial wafer for flip LED chips, belong to the epitaxy technology field of light emitting diode, this utility model arranges N-shaped superlattices interposed layer between the current extending and n AlInP limiting layer of epitaxial layer, p-type superlattices interposed layer is set between p AlInP limiting layer and p GaP Window layer, lifting n face and the current expansion ability in p face, improve existing AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties and yield.
Description
Technical field
This utility model belongs to the epitaxy technology field of light emitting diode, particularly a kind of LED chip for upside-down mounting
The technology of preparing of epitaxial wafer.
Background technology
In recent years, high brightness quaternary system AlGaInP LED has that power consumption is low, luminous efficiency is high, life-span length, volume
The features such as little, low cost, therefore have a wide range of applications in illumination and optical fiber telecommunications system.Quaternary system（AlxGa1-x）0.5In0.5P material system can be mated with GaAs substrate lattice and the change with Al component, and direct band gap can change to from 1.9cV
2.3cv, wavelength is from 560nm to 650nm, and then can achieve from green to emitting red light.Based on quaternary system（AlxGa1-x）0.5In0.5The lifting of the luminous efficiency of the LED of P material system, has multiple methods.Can be greatly enhanced using inverted structure
LED luminance, but, in upside-down mounting epitaxial structure, the quality of the current expansion ability in n face and p face can extreme influence LED epitaxial structure
Luminous efficiency and yield.
Based on this it is necessary to adopt a kind of brand-new current expansion method, to be lifted outside existing AlGaInP base flip LED
Prolong structure light-emitting efficiency, photoelectric properties and yield.
Utility model content
This utility model purpose is to propose one kind to lift AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectricity
The epitaxial wafer of the LED chip of performance and yield.
This utility model arranges n-GaAs cushion, n- in the same side of substrate（AlxGa1-x）0.5In0.5P corrosion cut-off
Layer, n-GaAs contact layer, n-（AlxGa1-x）0.5In0.5P roughened layer, n-（AlxGa1-x）0.5In0.5P current extending, N-shaped are super brilliant
Compartment, n-InAlP limiting layer, active layer, p-InAlP limiting layer, p-type superlattice layer and p-GaP Window layer, described N-shaped is super brilliant
By the cycle, the potential well layer being arranged alternately and barrier layer form compartment, the potential well layer that described p-type superlattice layer was arranged alternately by the cycle
With barrier layer composition.
This utility model arranges N-shaped superlattices interposed layer between current extending and n-AlInP limiting layer, in p-
P-type superlattices interposed layer, lifting n face and the current expansion ability in p face are set between AlInP limiting layer and p-GaP Window layer, carry
High existing AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties and yield.
The utility model has the advantages that：P-type superlattice layer can play certain cushioning effect, potential well to the migration of carrier
Layer will produce and fetter a large amount of holes, form Two-Dimensional Hole high-density state；Barrier layer can hinder the escape in hole, improves the horizontal stroke in hole
To distribution, stop that electronics is excessive, increase the injection efficiency in hole, improve the recombination probability in electronics and hole, improve device brightness,
Additionally, p-type superlattice layer itself has certain tunnel-effect, thus it is not result in the significantly raised of forward voltage, meanwhile, p
The multiple structure of type superlattices can reduce the lattice mismatch between p-AlInP limiting layer and P-GaP Window layer, effectively reduces
The dislocation density of P-GaP Window layer.
Equally, N-shaped superlattice layer can effectively improve electronics n-（AlxGa1-x）0.5In0.5The horizontal fortune of P current extending
Dynamic（Effectively enhance n-（AlxGa1-x）0.5In0.5The current expansion ability of P current extending）, and then effectively increase
The luminous efficiency of AlGaInP epitaxial structure.
In sum, this utility model product can effectively lift AlGaInP base flip LED epitaxial structure luminous efficiency, light
Electrical property and yield.
Further, the alternate cycle number of the potential well layer of N-shaped superlattice layer described in the utility model and barrier layer be 3～
15, the gross thickness of signal period potential well layer and barrier layer is 5nm～20nm.This setting can use the disposable epitaxial growth of MOCVD,
Process is simple, and ideal effect can be obtained, the number of plies also can be avoided simultaneously excessive and increase production cost.
The alternate cycle number of the potential well layer of described p-type superlattice layer and barrier layer is 3～15, signal period potential well layer and gesture
The gross thickness of barrier layer is 5nm～20nm.This setting can use the disposable epitaxial growth of MOCVD, process is simple, and can obtain more
Preferably effect, also can avoid the number of plies excessive simultaneously and increase production cost.
Brief description
Fig. 1 is a kind of structural representation of the present utility model.
Fig. 2 is a kind of structural representation of N-shaped superlattice layer in this utility model.
Fig. 3 is a kind of structural representation of p-type superlattice layer in this utility model.
Specific embodiment
First, preparation technology：
As shown in figure 1, adopting metal organic chemical vapor deposition（MOCVD）Method, on n-GaAs substrate 1 by down to
Epitaxial growth n-GaAs cushion 2, n-（AlxGa1-x）0.5In0.5P etch stop layers 3, n-GaAs contact layer 4, n-
（AlxGa1-x）0.5In0.5P roughened layer 5, n-（AlxGa1-x）0.5In0.5P current extending 6, N-shaped superlattice layer 7, n-InAlP limits
Layer 8, active layer 9, p-InAlP limiting layer 10, p-type superlattice layer 11, p-GaP Window layer.
Wherein, N-shaped superlattice layer 7 is by n- (AlxGa1-x)0.5In0.5P potential well layer and n- (AlyGa1-y)0.5In0.5P barrier layer
Cycle alternating growth is formed, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1, and x ＜ y.In N-shaped superlattice layer potential well layer and barrier layer alternately
Periodicity is 3～15, in growing n-type superlattice layer, using Si2H6As doped source.The signal period of N-shaped superlattice layer surpasses
The thickness of lattice is 5nm～20nm.
P-type superlattice layer 11 is by p- (AlxGa1-x)0.5In0.5P potential well layer and p- (AlyGa1-y)0.5In0.5The P barrier layer cycle
Alternating growth is formed, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1, and x ＜ y.The alternate cycle of potential well layer and barrier layer in p-type superlattice layer
Number is 3～15, when growing p-type superlattice layer, using Cp2Mg is as doped source.The signal period superlattices of p-type superlattice layer
Thickness be 5nm～20nm.
When making p-GaP Window layer, using Mg as doped chemical, successively make and form p-GaP thick-layer 12 and p-GaP table
Layer 13.
2nd, product structure feature：
As shown in figure 1, having n-GaAs cushion 2, n- in the same side of n-GaAs substrate 1 successively epitaxial growth
（AlxGa1-x）0.5In0.5P etch stop layers 3, n-GaAs contact layer 4, n-（AlxGa1-x）0.5In0.5P roughened layer 5, n-
（AlxGa1-x）0.5In0.5P current extending 6, N-shaped superlattice layer 7, n-InAlP limiting layer 8, active layer 9, p-InAlP limiting layer
10th, p-type superlattice layer 11 and the p-GaP Window layer being made up of p-GaP thick-layer 12 and p-GaP top layer 13.
As shown in Fig. 2 the potential well layer 7-1 that is arranged alternately by the cycle of N-shaped superlattice layer and barrier layer 7-2 forms.
Shown in Fig. 3, the potential well layer 11-1 that p-type superlattice layer was arranged alternately by the cycle and barrier layer 11-2 form.
Claims (5)
1. a kind of epitaxial wafer for flip LED chips, sets gradually n-GaAs cushion, n- in the same side of substrate
（AlxGa1-x）0.5In0.5P etch stop layers, n-GaAs contact layer, n-（AlxGa1-x）0.5In0.5P roughened layer, n-（AlxGa1-x）0.5In0.5P current extending, N-shaped superlattice layer, n-InAlP limiting layer, active layer, p-InAlP limiting layer, p-type superlattice layer
With p-GaP Window layer it is characterised in that：By the cycle, the potential well layer being arranged alternately and barrier layer form described N-shaped superlattice layer, institute
The potential well layer being arranged alternately and barrier layer form by the cycle to state p-type superlattice layer.
2. according to claim 1 be used for flip LED chips epitaxial wafer it is characterised in that：In described N-shaped superlattice layer,
The gross thickness of signal period potential well layer and barrier layer is 5nm～20nm.
3. the epitaxial wafer for flip LED chips according to claim 1 or claim 2 it is characterised in that：Described N-shaped superlattice layer
The alternate cycle number of middle potential well layer and barrier layer is 3～15.
4. according to claim 1 be used for flip LED chips epitaxial wafer it is characterised in that：In described p-type superlattice layer,
The gross thickness of signal period potential well layer and barrier layer is 5nm～20nm.
5. according to claim 1 or 4 be used for flip LED chips epitaxial wafer it is characterised in that：Described p-type superlattice layer
The alternate cycle number of middle potential well layer and barrier layer is 3～15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201620972691.6U CN206003801U (en) | 2016-08-30 | 2016-08-30 | A kind of epitaxial wafer for flip LED chips |
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| CN201620972691.6U CN206003801U (en) | 2016-08-30 | 2016-08-30 | A kind of epitaxial wafer for flip LED chips |
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| CN206003801U true CN206003801U (en) | 2017-03-08 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129196A (en) * | 2016-08-30 | 2016-11-16 | 扬州乾照光电有限公司 | A kind of epitaxial wafer for flip LED chips and preparation method thereof |
| CN110379898A (en) * | 2019-05-22 | 2019-10-25 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its growing method |
| CN111769187A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip structure |
| CN114784156A (en) * | 2022-05-06 | 2022-07-22 | 天津三安光电有限公司 | Light emitting diode and light emitting device |
| CN114899287A (en) * | 2022-04-20 | 2022-08-12 | 厦门士兰明镓化合物半导体有限公司 | Light emitting diode and method for manufacturing the same |
-
2016
- 2016-08-30 CN CN201620972691.6U patent/CN206003801U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129196A (en) * | 2016-08-30 | 2016-11-16 | 扬州乾照光电有限公司 | A kind of epitaxial wafer for flip LED chips and preparation method thereof |
| CN110379898A (en) * | 2019-05-22 | 2019-10-25 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its growing method |
| CN111769187A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip structure |
| CN114899287A (en) * | 2022-04-20 | 2022-08-12 | 厦门士兰明镓化合物半导体有限公司 | Light emitting diode and method for manufacturing the same |
| CN114784156A (en) * | 2022-05-06 | 2022-07-22 | 天津三安光电有限公司 | Light emitting diode and light emitting device |
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