CN103811601B - A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate - Google Patents
A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 23
- 239000010980 sapphire Substances 0.000 title claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000010437 gem Substances 0.000 claims description 5
- 229910001751 gemstone Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims 1
- BLJHFCVPKWOHJX-UHFFFAOYSA-N ethylgallium Chemical compound CC[Ga] BLJHFCVPKWOHJX-UHFFFAOYSA-N 0.000 claims 1
- 238000003754 machining Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 138
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The present invention provides a kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, the growing method of its epitaxial structure includes step in detail below: substrate carries out in hydrogen atmosphere high-temperature cleaning process, 600 DEG C are dropped at a temperature of Jiang, adjust epitaxial growth atmosphere to prepare to grow multistage LT-AlGaN/MT-GaN/HT-GaN cushion, growth GaN non-doped layer afterwards, the N-type GaN layer that growth doping content is stable, grow shallow quantum well layer, growth luminescent layer multiple quantum well layer, growing low temperature p-type GaN layer, growth PAlGaN current barrier layer, high temperature p-type GaN layer, p-type contact layer, epitaxial growth uses pure nitrogen gas atmosphere to make annealing treatment after terminating.The present invention preferably solves the Macrolattice mismatch problem between sapphire and GaN by multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure, reduces threading dislocation, improves crystal mass, reduces electric leakage and improves the brightness of epitaxial wafer, improves LED luminous efficiency.
Description
Technical field
The present invention relates to GaN base light emitting diode (LED) technical field of material, be specially a kind of with blue precious
It it is the GaN base LED multi-level buffer layer growth method of substrate at the bottom of stone lining.
Background technology
Volume is little, energy because it has for semiconductor light-emitting-diode (light-emission diodes, LED)
Consume low, life-span length, the advantage such as environmental and durable, obtain very in fields such as display lamp, display screen, backlights
Good application.At present blue, green light LED mainly use GaN as matrix material, because GaN is the width of direct band gap
Bandgap semiconductor material, its ternary alloy three-partalloy InxGa1-xThe energy band band gap of N (x=0～1) can be from 0.7eV(InN)
To 3.4eV(GaN) continuously adjustabe, emission wavelength covering visible light and the whole region of black light.Recently
Along with LED is in the extensive application in white-light illuminating field, the LED of high brightness becomes the main target that people pursue.
In the epitaxial layer of gallium nitride-based light-emitting diode growth course grown with sapphire for substrate, due to blue precious
There is significant lattice mismatch in stone and GaN, GaN base light LED material can produce the biggest in growth course
Stress.This stress influences whether the internal quantum efficiency of epitaxial wafer and the brightness of epitaxial wafer, the most also can affect
To antistatic effect, in typical epitaxial layer structure, with low-temperature gan layer as cushion, this layer is in epitaxial growth
In have great role.And for cushion, the effect that different growing methods is played varies in size, the heaviest
Stress in the effect wanted such as release crystallization process, blocks up the threading dislocation that goes out, improves crystal mass etc..
Summary of the invention
Technical problem solved by the invention is to provide a kind of GaN base LED with Sapphire Substrate as substrate
Multi-level buffer layer growth method, to solve the problem in above-mentioned background technology.
Technical problem solved by the invention realizes by the following technical solutions: one with Sapphire Substrate is
The GaN base LED multi-level buffer layer growth method of substrate, its multi-level buffer layer epitaxial structure, from bottom to top suitable
Sequence includes successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN cushion, GaN non-doped layer, N
Type GaN layer, shallow quantum well layer, luminescent quantum well layer, low temperature p-type GaN layer, PAlGaN current barrier layer,
High temperature p-type GaN layer, p-type contact layer, the growing method of its epitaxial structure includes step in detail below:
(1) substrate is carried out in 1000-1200 DEG C of hydrogen atmosphere high-temperature cleaning and processes 5-20min, then
Carrying out nitrogen treatment, substrate is sapphire material；
(2) drop to 600 DEG C at a temperature of inciting somebody to action, adjust the preparation growth of epitaxial growth atmosphere multistage
LT-AlGaN/MT-GaN/HT-GaN cushion, described multistage LT-AlGaN/MT-GaN/HT-GaN cushion bag
Include multiple LT-AlGaN/MT-GaN/HT-GaN structure overlapping successively, at high temperature through H2Processed is blue precious
Stone grown on substrates AlGaN layer is 600 DEG C, epitaxial growth under the conditions of reaction cavity pressure 500Torr, thick
Degree is 10-30nm；After AlGaN layer has grown, temperature is increased to 1010-1100 DEG C and carries out at thermal annealing
Reason；Afterwards, MT-GaN layer 950 DEG C, under the conditions of reaction cavity pressure 400Torr with 4.0-10.0 μm/h
High development speed carries out epitaxial growth, and thickness is 0.2-2 μm；HT-GaN layer temperature be 1080 degree, anti-
Carrying out epitaxial growth with 2.0-4.0 μm/low growth rate of h under the conditions of answering chamber pressure 200Torr, thickness is
0.1-2 μm, finally through H under the conditions of 1000-1010 DEG C2Gas disposal epitaxial surface, prepares growth next week
Phase, multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure 2-20 the cycle of overlapping growth successively；
(3), after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth terminates, temperature is regulated
To 1000-1200 DEG C, epitaxial growth thickness is the GaN non-doped layer of 0.5-2 μm, and growth pressure is
100-300Torr, V/III ratio is 100-3000；
(4) after the growth of described GaN non-doped layer terminates, the N-type GaN layer that growth doping content is stable is thick
Degree is 2.4-8.4 μm, and growth temperature is 1000-1200 DEG C, and pressure is 100-600Torr, and V/III ratio is
100-3000；
(5) after the growth of described N-type GaN layer terminates, growing shallow quantum well layer, described shallow quantum well layer includes
3-15 quantum well structure overlapping successively, growth temperature is 820-920 DEG C, and growth pressure is
100-500Torr, V/III ratio is 300-5000, and thickness is 10-200nm；
(6) after the growth of described shallow quantum well layer terminates, growing luminescent layer multiple quantum well layer, growth temperature is
700-850 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, described luminescence
Layer MQW is by the In in 6-12 cycleyGa1-yN (x < y < 1)/GaN MQW composition, described
InyGa1-yN (x < y < 1) quantum well layer thickness is 2-5nm, and growth temperature is 720-820 DEG C；Described GaN barrier layer
Thickness is 8-15nm, and growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr, and V/III rubs
That ratio is 300-5000；
(7), after the growth of described luminescent layer quantum well layer terminates, growth thickness is the low temperature p-type of 10-100nm
GaN layer, growth temperature is 620-820 DEG C, and growth time is 5-35min, and growth pressure is 100-500Torr,
V/III ratio is 300-5000；
(8), after the growth of described low temperature p-type GaN layer terminates, growth thickness is the PAlGaN electricity of 10-200nm
Flow barrier, growth temperature is 800-1200 DEG C, and growth time is 2-18min, and growth pressure is
50-500Torr, V/III than be 10-1000, in p-type AlGaN layer the molar constituent content of Al be 5%～
30%；
(9), after the growth of described PAlGaN current barrier layer terminates, growth thickness is the high temperature P of 100-800nm
Type GaN layer, growth temperature is 850-950 DEG C, and growth time is 5-40min, and growth pressure is
100-500Torr, V/III ratio is 300-5000；
(10), after the growth of described high temperature p-type GaN layer terminates, growth thickness is the p-type contact layer of 5-20nm,
Growth temperature is 850-1050 DEG C, and growth time is 1-10min, and growth pressure is 100-500Torr, V/
III ratio is 1000-20000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas atmosphere
Carry out making annealing treatment 2-15min, be then down to room temperature, subsequently, after over cleaning, deposition, photoetching and etching
Continuous processing technique makes single small-size chips.
With trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl in the growth course of described epitaxial structure
Aluminum (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source.
With silane (SiH in the growth course of described epitaxial structure4) and two cyclopentadienyl magnesium (CP2Mg) respectively as N,
P-type dopant.
With hydrogen (H in the growth course of described epitaxial structure2) or nitrogen (N2) as carrier gas.
Compared with disclosed technology, there is advantages below in the present invention: the present invention is by multistage
LT-AlGaN/MT-GaN/HT-GaN buffer layer structure preferably solves the big lattice between sapphire and GaN and loses
Join problem, the stress between sapphire and GaN can be reduced, reduce threading dislocation, improve crystal mass, subtract
Little electric leakage；Meanwhile, this kind of growing method can periodically progressively bury in oblivion during alternating growth from substrate with
The threading dislocation that GaN interface produces, reduces threading dislocation further, thus reduces the non-radiative multiple of active area
Conjunction center, improves the brightness of epitaxial wafer, improves LED luminous efficiency.
Accompanying drawing explanation
Fig. 1 is the epitaxial layer multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure growth signal of the present invention
Figure.
Detailed description of the invention
In order to make the technological means of the present invention, creation characteristic, workflow, using method reach purpose and merit
Effect is easy to understand, and below in conjunction with the embodiment of the present invention, enters the technical scheme in the embodiment of the present invention
Row clearly and completely describes, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The every other embodiment obtained under creative work premise, broadly falls into the scope of protection of the invention.
Embodiment 1
A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate, its multi-level buffer layer
Epitaxial structure, order from bottom to top includes successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN are slow
Rush layer, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum well layer, low temperature p-type GaN
Layer, PAlGaN current barrier layer, high temperature p-type GaN layer, p-type contact layer, the growing method of its epitaxial structure
Including step in detail below:
(1) substrate is carried out in 1000 DEG C of hydrogen atmospheres high-temperature cleaning and processes 5min, then nitrogenize
Processing, substrate is sapphire material；
(2) drop to 600 DEG C at a temperature of inciting somebody to action, adjust the preparation growth of epitaxial growth atmosphere multistage
LT-AlGaN/MT-GaN/HT-GaN cushion, described multistage LT-AlGaN/MT-GaN/HT-GaN cushion bag
Include multiple LT-AlGaN/MT-GaN/HT-GaN structure overlapping successively, at high temperature through H2Processed is blue precious
Stone grown on substrates AlGaN layer is 600 DEG C, epitaxial growth under the conditions of reaction cavity pressure 500Torr, thick
Degree is 10-30nm；After AlGaN layer has grown, temperature is increased to 1010-1100 DEG C and carries out at thermal annealing
Reason；Afterwards, MT-GaN layer 950 DEG C, become with 4.0 μm/h height under the conditions of reaction cavity pressure 400Torr
Long speed carries out epitaxial growth, and thickness is 0.2 μm；HT-GaN layer is 1080 DEG C, reaction cavity pressure in temperature
Carrying out epitaxial growth with the low growth rate of 2.0 μm/h under the conditions of power 200Torr, thickness is 0.1 μm, finally
Through H under the conditions of 1000 DEG C2Gas disposal epitaxial surface, prepares growth next cycle, multistage
LT-AlGaN/MT-GaN/HT-GaN buffer layer structure 2 cycles of overlapping growth successively；
(3), after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth terminates, temperature is regulated
To 1000 DEG C, epitaxial growth thickness is the GaN non-doped layer of 0.5 μm, and growth pressure is 100Torr, V
/ III ratio is 100；
(4) after the growth of described GaN non-doped layer terminates, the N-type GaN layer that growth doping content is stable is thick
Degree is 2.4 μm, and growth temperature is 1000 DEG C, and pressure is 100Torr, and V/III ratio is 100；
(5) after the growth of described N-type GaN layer terminates, growing shallow quantum well layer, described shallow quantum well layer includes
3 quantum well structures overlapping successively, growth temperature is 820 DEG C, and growth pressure is 100Torr, V/III ratio
Being 300, thickness is 10nm；
(6) after the growth of described shallow quantum well layer terminates, growing luminescent layer multiple quantum well layer, growth temperature is
700 DEG C, growth pressure is 100Torr, and V/III mol ratio is 300, and described luminescent layer MQW is by 6
The In in individual cycleyGa1-yN (x < y < 1)/GaN MQW composition, described InyGa1-yN (x < y < 1) quantum well layer
Thickness is 2nm, and growth temperature is 720 DEG C；Described GaN barrier layer thickness is 8nm, and growth temperature is 820 DEG C,
Growth pressure is 100Torr, and V/III mol ratio is 300；
(7), after the growth of described luminescent layer quantum well layer terminates, growth thickness is low temperature p-type GaN of 10nm
Layer, growth temperature is 620 DEG C, and growth time is 5min, and growth pressure is 100Torr, and V/III ratio is 300；
(8), after the growth of described low temperature p-type GaN layer terminates, growth thickness is the PAlGaN electric current resistance of 10nm
Barrier, growth temperature is 800 DEG C, and growth time is 2min, and growth pressure is 50Torr, and V/III ratio is
10, in p-type AlGaN layer, the molar constituent content of Al is 5%；
(9), after the growth of described PAlGaN current barrier layer terminates, growth thickness is the high temperature p-type of 100nm
GaN layer, growth temperature is 850 DEG C, and growth time is 5min, and growth pressure is 100Torr, V/III ratio
It is 300；
(10) described high temperature p-type GaN layer growth terminate after, growth thickness at the p-type contact layer of 5nm,
Growth temperature is 850 DEG C, and growth time is 1min, and growth pressure is 100Torr, and V/III ratio is 1000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas gas
Atmosphere carries out making annealing treatment 2min, is then down to room temperature, subsequently, after over cleaning, deposition, photoetching and etching
Continuous processing technique makes single small-size chips.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source；With silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, with hydrogen (H2) as carrier gas.
Embodiment 2
A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate, its multi-level buffer layer
Epitaxial structure, order from bottom to top includes successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN are slow
Rush layer, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum well layer, low temperature p-type GaN
Layer, PAlGaN current barrier layer, high temperature p-type GaN layer, p-type contact layer, the growing method of its epitaxial structure
Including step in detail below:
(1) substrate is carried out in 1200 DEG C of hydrogen atmospheres high-temperature cleaning and processes 20min, then nitrogenize
Process, the outer sapphire material of substrate；
(2) drop to 600 DEG C at a temperature of inciting somebody to action, adjust the preparation growth of epitaxial growth atmosphere multistage
LT-AlGaN/MT-GaN/HT-GaN cushion, described multistage LT-AlGaN/MT-GaN/HT-GaN cushion bag
Include multiple LT-AlGaN/MT-GaN/HT-GaN structure overlapping successively, at high temperature through H2Processed is blue precious
Stone grown on substrates AlGaN layer is 600 DEG C, epitaxial growth under the conditions of reaction cavity pressure 500Torr, thick
Degree is 30nm；After AlGaN layer has grown, temperature is increased to 1100 DEG C and carries out thermal anneal process；Afterwards,
MT-GaN layer 950 DEG C, enter with 10.0 μm/h high development speed under the conditions of reaction cavity pressure 400Torr
Row epitaxial growth, thickness is 2 μm；HT-GaN layer is 1080 DEG C, reaction cavity pressure 200Torr in temperature
Under the conditions of carry out epitaxial growth with the low growth rate of 4.0 μm/h, thickness is 2 μm, finally at 1010 DEG C of bars
Through H under part2Gas disposal epitaxial surface, prepares growth next cycle, multistage LT-AlGaN/MT-GaN/HT-GaN
Buffer layer structure 20 cycles of overlapping growth successively；
(3), after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth terminates, temperature is regulated
To 1200 DEG C, epitaxial growth thickness is the GaN non-doped layer of 2 μm, and growth pressure is 300Torr, V/
III ratio is 3000；
(4) after the growth of described GaN non-doped layer terminates, the N-type GaN layer that growth doping content is stable is thick
Degree is 8.4 μm, and growth temperature is 1200 DEG C, and pressure is 600Torr, and V/III ratio is 3000；
(5) after the growth of described N-type GaN layer terminates, growing shallow quantum well layer, described shallow quantum well layer includes
15 quantum well structures overlapping successively, growth temperature is 920 DEG C, and growth pressure is 500Torr, V/III
Ratio is 5000, and thickness is 200nm；
(6) after the growth of described shallow quantum well layer terminates, growing luminescent layer multiple quantum well layer, growth temperature is
850 DEG C, growth pressure is 500Torr, and V/III mol ratio is 5000, described luminescent layer MQW by
The In in 12 cyclesyGa1-yN (x < y < 1)/GaN MQW composition, described InyGa1-yN (x < y < 1) SQW
Layer thickness is 5nm, and growth temperature is 820 DEG C；Described GaN barrier layer thickness is 15nm, and growth temperature is 920 DEG C,
Growth pressure is 500Torr, and V/III mol ratio is 5000；
(7), after the growth of described luminescent layer quantum well layer terminates, growth thickness is low temperature p-type GaN of 100nm
Layer, growth temperature is 820 DEG C, and growth time is 35min, and growth pressure is 500Torr, and V/III ratio is
5000；
(8), after the growth of described low temperature p-type GaN layer terminates, growth thickness is the PAlGaN electric current of 200nm
Barrier layer, growth temperature is 1200 DEG C, and growth time is 18min, and growth pressure is 500Torr, V/III
Ratio is 1000, and in p-type AlGaN layer, the molar constituent content of Al is 30%；
(9), after the growth of described PAlGaN current barrier layer terminates, growth thickness is the high temperature p-type of 800nm
GaN layer, growth temperature is 950 DEG C, and growth time is 40min, and growth pressure is 500Torr, V/III ratio
It is 5000；
(10), after the growth of described high temperature p-type GaN layer terminates, growth thickness is the p-type contact layer of 20nm,
Growth temperature is 1050 DEG C, and growth time is 10min, and growth pressure is 500Torr, and V/III ratio is 20000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 800 DEG C, uses pure nitrogen gas atmosphere to enter
Row annealing 15min, is then down to room temperature, subsequently, adds through over cleaning, deposition, photoetching and etching are follow-up
Work technique makes single small-size chips.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source；With silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, with hydrogen (H2) as carrier gas.
Embodiment 3
A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate, its multi-level buffer layer
Epitaxial structure, order from bottom to top includes successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN are slow
Rush layer, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum well layer, low temperature p-type GaN
Layer, PAlGaN current barrier layer, high temperature p-type GaN layer, p-type contact layer, the growing method of its epitaxial structure
Including step in detail below:
(1) substrate is carried out in 1100 DEG C of hydrogen atmospheres high-temperature cleaning and processes 10min, then nitrogenize
Process, the outer sapphire material of substrate；
(2) drop to 600 DEG C at a temperature of inciting somebody to action, adjust the preparation growth of epitaxial growth atmosphere multistage
LT-AlGaN/MT-GaN/HT-GaN cushion, described multistage LT-AlGaN/MT-GaN/HT-GaN cushion bag
Include multiple LT-AlGaN/MT-GaN/HT-GaN structure overlapping successively, at high temperature through H2Processed is blue precious
Stone grown on substrates AlGaN layer is 600 DEG C, epitaxial growth under the conditions of reaction cavity pressure 500Torr, thick
Degree is 20nm；After AlGaN layer has grown, temperature is increased to 1050 DEG C and carries out thermal anneal process；Afterwards,
MT-GaN layer 950 DEG C, carry out with 5.0 μm/h high development speed under the conditions of reaction cavity pressure 400Torr
Epitaxial growth, thickness is 1 μm；HT-GaN layer is 1080 DEG C, reaction cavity pressure 200Torr bar in temperature
Carrying out epitaxial growth with the low growth rate of 3.0 μm/h under part, thickness is 1 μm, finally 1000 DEG C of conditions
Lower through H2Gas disposal epitaxial surface, prepares growth next cycle, multistage LT-AlGaN/MT-GaN/HT-GaN
Buffer layer structure 15 cycles of overlapping growth successively；
(3), after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth terminates, temperature is regulated
To 1100 DEG C, epitaxial growth thickness is the GaN non-doped layer of 1 μm, and growth pressure is 200Torr, V/
III ratio is 1000；
(4) after the growth of described GaN non-doped layer terminates, the N-type GaN layer that growth doping content is stable is thick
Degree is 5.0 μm, and growth temperature is 1100 DEG C, and pressure is 500Torr, and V/III ratio is 2000；
(5) after the growth of described N-type GaN layer terminates, growing shallow quantum well layer, described shallow quantum well layer includes
12 quantum well structures overlapping successively, growth temperature is 850 DEG C, and growth pressure is 400Torr, V/III
Ratio is 4000, and thickness is 100nm；
(6) after the growth of described shallow quantum well layer terminates, growing luminescent layer multiple quantum well layer, growth temperature is
800 DEG C, growth pressure is 400Torr, and V/III mol ratio is 4000, described luminescent layer MQW by
The In in 10 cyclesyGa1-yN (x < y < 1)/GaN MQW composition, described InyGa1-yN (x < y < 1) SQW
Layer thickness is 4nm, and growth temperature is 800 DEG C；Described GaN barrier layer thickness is 10nm, and growth temperature is 900 DEG C,
Growth pressure is 300Torr, and V/III mol ratio is 3000；
(7), after the growth of described luminescent layer quantum well layer terminates, growth thickness is low temperature p-type GaN of 50nm
Layer, growth temperature is 720 DEG C, and growth time is 30min, and growth pressure is 400Torr, and V/III ratio is
3000；
(8), after the growth of described low temperature p-type GaN layer terminates, growth thickness is the PAlGaN electric current of 100nm
Barrier layer, growth temperature is 1000 DEG C, and growth time is 15min, and growth pressure is 400Torr, V/III
Ratio is 500, and in p-type AlGaN layer, the molar constituent content of Al is 25%；
(9), after the growth of described PAlGaN current barrier layer terminates, growth thickness is the high temperature p-type of 500nm
GaN layer, growth temperature is 900 DEG C, and growth time is 30min, and growth pressure is 300Torr, V/III ratio
It is 1000；
(10), after the growth of described high temperature p-type GaN layer terminates, growth thickness is the p-type contact layer of 10nm,
Growth temperature is 950 DEG C, and growth time is 5min, and growth pressure is 400Torr, and V/III ratio is 10000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 700 DEG C, uses pure nitrogen gas atmosphere to enter
Row annealing 10min, is then down to room temperature, subsequently, adds through over cleaning, deposition, photoetching and etching are follow-up
Work technique makes single small-size chips.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source；With silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, with hydrogen (H2) as carrier gas.
The present invention by multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure preferably solve sapphire with
Macrolattice mismatch problem between GaN, can reduce the stress between sapphire and GaN, reduces threading dislocation,
Improve crystal mass, reduce electric leakage；Meanwhile, this kind of growing method can be periodically during alternating growth
Progressively bury in oblivion the threading dislocation produced with GaN interface from substrate, reduce threading dislocation further, thus subtract
The non-radiative recombination center of rare source region, improves the brightness of epitaxial wafer, improves LED luminous efficiency.
The ultimate principle of the present invention, principal character and advantages of the present invention have more than been shown and described.The industry
Skilled person will appreciate that, the present invention is not restricted to the described embodiments, in above-described embodiment and description
The principle that the present invention is simply described described, without departing from the spirit and scope of the present invention, the present invention
Also having various changes and modifications, these changes and improvements both fall within scope of the claimed invention.This
The claimed scope of invention is defined by appending claims and equivalent thereof.
Claims (4)
1. the GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate, it is multistage slow
Rushing layer epitaxial structure, order from bottom to top includes successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN
Cushion, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum well layer, low temperature p-type GaN
Layer, PAlGaN current barrier layer, high temperature p-type GaN layer, p-type contact layer, it is characterised in that: its epitaxy junction
The growing method of structure includes step in detail below:
(1) substrate is carried out in 1000-1200 DEG C of hydrogen atmosphere high-temperature cleaning and processes 5-20min, then
Carrying out nitrogen treatment, substrate is sapphire material；
(2) drop to 600 DEG C at a temperature of inciting somebody to action, adjust the preparation growth of epitaxial growth atmosphere multistage
LT-AlGaN/MT-GaN/HT-GaN cushion, described multistage LT-AlGaN/MT-GaN/HT-GaN cushion bag
Include multiple LT-AlGaN/MT-GaN/HT-GaN structure overlapping successively, at high temperature through H2Processed is blue precious
Stone grown on substrates AlGaN layer is 600 DEG C, epitaxial growth under the conditions of reaction cavity pressure 500Torr, thick
Degree is 10-30nm；After AlGaN layer has grown, temperature is increased to 1010-1100 DEG C and carries out at thermal annealing
Reason；Afterwards, MT-GaN layer 950 DEG C, under the conditions of reaction cavity pressure 400Torr with 4.0-10.0 μm/h
High development speed carries out epitaxial growth, and thickness is 0.2-2 μm；HT-GaN layer temperature be 1080 degree, anti-
Carrying out epitaxial growth with 2.0-4.0 μm/low growth rate of h under the conditions of answering chamber pressure 200Torr, thickness is
0.1-2 μm, finally through H under the conditions of 1000-1010 DEG C2Gas disposal epitaxial surface, prepares growth next week
Phase, multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure 2-20 the cycle of overlapping growth successively；
(3), after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth terminates, temperature is regulated
To 1000-1200 DEG C, epitaxial growth thickness is the GaN non-doped layer of 0.5-2 μm, and growth pressure is
100-300Torr, V/III ratio is 100-3000；
(4) after the growth of described GaN non-doped layer terminates, the N-type GaN layer that growth doping content is stable is thick
Degree is 2.4-8.4 μm, and growth temperature is 1000-1200 DEG C, and pressure is 100-600Torr, and V/III ratio is
100-3000；
(5) after the growth of described N-type GaN layer terminates, growing shallow quantum well layer, described shallow quantum well layer includes
3-15 quantum well structure overlapping successively, growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr,
V/III ratio is 300-5000, and thickness is 10-200nm；
(6) after the growth of described shallow quantum well layer terminates, growing luminescent layer multiple quantum well layer, growth temperature is
700-850 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, described luminescence
Layer MQW is by the In in 6-12 cycleyGa1-yN/GaN wherein x < y < 1, MQW forms, described
InyGa1-yN, wherein x < y < 1, quantum well layer thickness is 2-5nm, and growth temperature is 720-820 DEG C；Described
GaN barrier layer thickness is 8-15nm, and growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr,
V/III mol ratio is 300-5000；
(7), after the growth of described luminescent layer quantum well layer terminates, growth thickness is the low temperature p-type of 10-100nm
GaN layer, growth temperature is 620-820 DEG C, and growth time is 5-35min, and growth pressure is 100-500Torr,
V/III ratio is 300-5000；
(8), after the growth of described low temperature p-type GaN layer terminates, growth thickness is the PAlGaN electricity of 10-200nm
Flow barrier, growth temperature is 800-1200 DEG C, and growth time is 2-18min, and growth pressure is 50-500Torr,
V/III ratio is 10-1000, and in p-type AlGaN layer, the molar constituent content of Al is 5%～30%；
(9), after the growth of described PAlGaN current barrier layer terminates, growth thickness is the high temperature P of 100-800nm
Type GaN layer, growth temperature is 850-950 DEG C, and growth time is 5-40min, and growth pressure is 100-500Torr,
V/III ratio is 300-5000；
(10), after the growth of described high temperature p-type GaN layer terminates, growth thickness is the p-type contact of 5-20nm
Layer, growth temperature is 850-1050 DEG C, and growth time is 1-10min, and growth pressure is 100-500Torr,
V/III ratio is 1000-20000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas gas
Atmosphere carries out making annealing treatment 2-15min, is then down to room temperature, subsequently, through over cleaning, deposition, photoetching and etching
Subsequent machining technology makes single small-size chips.
A kind of GaN base LED multi-level buffer with Sapphire Substrate as substrate the most according to claim 1
Layer growth method, it is characterised in that: in the growth course of described epitaxial structure with trimethyl gallium (TMGa), three
Ethyl gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as
Ga, Al, In and N source.
A kind of GaN base LED multi-level buffer with Sapphire Substrate as substrate the most according to claim 1
Layer growth method, it is characterised in that: with silane (SiH in the growth course of described epitaxial structure4) and two cyclopentadienyl magnesium
(CP2Mg) respectively as N, P-type dopant.
A kind of GaN base LED multi-level buffer with Sapphire Substrate as substrate the most according to claim 1
Layer growth method, it is characterised in that: with hydrogen (H in the growth course of described epitaxial structure2) or nitrogen (N2)
As carrier gas.
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| CN104409319B (en) * | 2014-10-27 | 2017-04-05 | 苏州新纳晶光电有限公司 | The preparation method of high-quality GaN cushion is grown on a kind of graphene-based bottom |
| CN104465918B (en) * | 2014-10-31 | 2017-06-27 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN104518059A (en) * | 2014-11-06 | 2015-04-15 | 聚灿光电科技(苏州)有限公司 | Epitaxy structure and growth method thereof based on GaN-based quantum well |
| CN104701432A (en) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN-based LED epitaxial structure and preparation method thereof |
| CN105679892A (en) * | 2016-03-09 | 2016-06-15 | 华灿光电(苏州）有限公司 | Epitaxial structure of light emitting diode and epitaxial growth method therefor |
| CN106328780B (en) * | 2016-11-01 | 2018-09-18 | 湘能华磊光电股份有限公司 | The method of light emitting diode substrate epitaxial growth based on AlN templates |
| CN106374021A (en) * | 2016-12-02 | 2017-02-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method based on sapphire graphical substrate |
| WO2022165895A1 (en) * | 2021-02-07 | 2022-08-11 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure and manufacturing method therefor, and led chip |
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| CN103208571A (en) * | 2013-04-08 | 2013-07-17 | 合肥彩虹蓝光科技有限公司 | GaN-based LED (light emitting diode) epitaxial wafer and production method thereof |
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