CN1866389A - Electric current type sensing apparatus and method for high-density multi-port cache - Google Patents
Electric current type sensing apparatus and method for high-density multi-port cache Download PDFInfo
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- CN1866389A CN1866389A CN 200510025997 CN200510025997A CN1866389A CN 1866389 A CN1866389 A CN 1866389A CN 200510025997 CN200510025997 CN 200510025997 CN 200510025997 A CN200510025997 A CN 200510025997A CN 1866389 A CN1866389 A CN 1866389A
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Abstract
The disclosed current sensing device for high-density multi-port buffer in embedded flash program comprises: emitting a selecting signal (0 or 1) by a multiple-port register file cell, and herefor outputting unit current and an initial startup voltage; defining a reference voltage by a dummy bit line in dummy flash cell as well as correlative current; sending the reference and unit current to a current comparator amplifier to sense the difference value and output for session at once (SAO). This invention can improve the sensing time of amplifier.
Description
Technical field
The present invention relates to a kind of high-density multi-port cache sensor circuit, particularly a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache.
Background technology
Generally speaking, the single ended voltage inductors (single-ended voltagesensing scheme) that use in the design of multi-port cache more, as shown in Figure 1, a five terminal buffer unit 10 wherein has two ends for writing, and bit line WBL is arranged respectively
1, WBL
2And character line WWL
1, WWL
2, other three ends have bit line RBL respectively for reading
1, RBL
2, RBL
3And character line RWL
1, RWL
2, RBL
3, as the character line RBL of five-port buffer unit 10
3Import a voltage V (b1) to single-ended voltage-type induction amplifier 12 (voltage-mode sensing amplifier, VSA) after, the voltage of voltage-type induction amplifier 12 induction inputs also sends out it.
But voltage sensor has speed reaches shortcomings such as dynamic noise margin scope is too little slowly, wherein the induced voltage of input voltage inductor must be enough big, and in highdensity buffer, bit-line load more then the sensitive time longer, its sensitive time length as shown in the formula:
T (sense)=C (b1) * V (sense)/I
CellC (b1) is the resistance of multi-port cache neutrality line, I
CellElectric current for multi-port cache input voltage inductor; Because induced voltage is big, so the sensitive time is longer relatively.In addition, because this voltage sensor is single-ended input, so connect the pattern rejection altogether than (common mode rejection ratio, parameter CMRR) is relatively poor, causes error to become big.
Therefore, the present invention proposes a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, to solve the problems of the technologies described above promptly at above-mentioned shortcoming.
Summary of the invention
The object of the present invention is to provide a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, it provides an emulation flash memory cell (dummy flash cell), make it send a reference current to compare with the electric current of multiport cache unit, and result relatively is positive and negative reference current value, can shorten the sensitive time of electric current comparison amplifier.
Another object of the present invention is to provide a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, it utilizes an emulation bit line that reference voltage is done the action of eliminating or editing, and reference current value is changed.
A further object of the present invention is to provide a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, it utilizes one to select signal input multiport buffer unit, and the cell current that makes the multiport buffer unit is the twice of zero or reference current value.
A further object of the present invention is to provide a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, it utilizes emulation flash memory cell input current to the electric current comparison amplifier, makes sensitive time shortening and dynamic noise margin become big.
For reaching above-mentioned purpose, the invention provides a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, it utilizes a multiport cache unit (multiple-port register file cell) to send one 0 or 1 selection signal, and export a start voltage and a cell current according to this selection signal, in addition, utilize an emulation bit line of an Embedded emulation flash memory cell (dummy flash cell) to define than its big reference voltage, and produce a corresponding reference current according to this start voltage; This cell current and this reference current are sent to an electric current comparison amplifier (currentcomparator amplifier), it responds to the difference of this cell current and this reference current, if selecting signal is that 1 cell current is bordering on zero, if selecting signal is the twice magnitude of current that 0 cell current is a reference current, difference is positive and negative reference voltage level, and with its output with carry out the imprinting of low capacity section (session at once, SAO).Because this difference only has two kinds of possibilities of positive and negative reference current value, so can speed the sensitive time of electric current comparison amplifier.
A kind of electric current type sensing apparatus and method thereof provided by the invention at embedded flash memory program middle-high density multi-port cache, it uses the induction system of current-mode, export reference current to a difference current comparison amplifier by an emulation flash memory cell, since the difference of reference current and cell current be reference current on the occasion of or negative value, and this reference current is to see through the emulation bit line to define behind the reference voltage and produce, so can make the complete needs according to the invention of reference current value, reduce reference current contingent variable in program, therefore the present invention compares with the prior art of working voltage induction amplifier, has shorter sensitive time and better dynamic noise margin and reduces error.
Below the effect that describes purpose of the present invention, technology contents, characteristics in detail and reached by specific embodiment.
Description of drawings
Fig. 1 is the synoptic diagram of single ended voltage inductor in the prior art.
Fig. 2 is a structural representation of the present invention.
Fig. 3 is the inventive method process flow diagram.
Fig. 4 is cell current among the present invention and the reference current curve map to voltage.
Label declaration:
10 five-port buffer units, 12 voltage-type induction amplifiers
14 3 end buffer units, 16 emulation flash memory cells
18 electric current comparison amplifiers 20 are selected signal
Embodiment
The invention provides a kind of electric current type sensing apparatus and method thereof at embedded flash memory program middle-high density multi-port cache, its structure as shown in Figure 2, one or three end buffer units 14, wherein an end is for writing end, two ends are for reading end, and three ports have a bit line WBL, RBL respectively
1, RBL
2And a character line WWL, RWL
1, RWL
2Link to each other, have one to select signal 20 by the outside input before read port, this three ends buffer unit 14 is also exported a start voltage V
tAn and cell current I
CellOne emulation flash memory cell 16 (dummy flash cell), wherein plural gate can be arranged, also be connected with a bit line and a character line on each gate respectively, emulation flash memory cell 16 in Fig. 2 only has a gate, its emulation bit line DBL (dummy bit line) is connected on the emulation flash memory cell 16, and defines a reference voltage V
t', therefore produce a reference current I again
RefOther has an electric current comparison amplifier (current comparator amplifier) 18, it is induction amplifier (the current-mode sensing amplifier of a current-mode, CSA), it is erected on the differential circuit (differential circuit).
Flow process of the present invention please refer to Fig. 3, as described in step S10, selects signal 20 to three buffer to ports unit 14 by outside input one, and this selection signal 20 is 0 or 1 logic signal, makes three buffer to ports unit 14 select signal 20 outputs one start voltage V according to this
tAn and cell current I
CellStep S12 is described for another example, because the reference current I that definition emulation flash memory cell 16 is exported among the present invention
RefBe 1/2*I
Cell, therefore, for making reference current I
RefBe cell current I
CellHalf, the start voltage V that is exported according to three buffer to ports unit 14 by emulation bit line DBL
tAnd cell current I
CellDefine a reference voltage V
t', make the reference current I that thereupon produces
RefValue is I
Cell/ 2, and reference voltage V
t' greater than start voltage V
tEmulation flash memory cell 16 is with reference current I
RefAfter exporting electric current comparison amplifier 18 to, as step S14 as described in the S16, as reference current I
RefAnd cell current I
CellAfter all flowing to electric current comparison amplifier 18,18 pairs two electric currents of this electric current comparison amplifier are responded to, its two difference relatively, with output carry out the imprinting of low capacity section (session at once, SAO).Wherein, when selecting signal 20 to be 0, cell current I
CellBe the reference current amount of twice, otherwise, when selecting signal 20 to be 1, cell current I
CellApproach 0.
The reference current that cell current that Fig. 4 is provided for three buffer to ports unit and emulation flash memory cell are provided is to the curve map of voltage, by finding out among the figure, and when selecting signal to be 0, the difference DELTA I=I of two electric currents
Cell(0)-I
Ref～2I
Ref-I
Ref=I
Ref, and when selecting signal to be 1, difference DELTA I=I
Cell(1)-I
Ref=-I
RefBecause difference only has positive reference current and negative two kinds of situations of reference current, and the size of reference current produces according to the defined reference voltage of emulation bit line, therefore can improve the induction speed of electric current comparison amplifier, shorten its sensitive time greatly, and obtain preferable dynamic noise margin (dynamic noisemargin).
Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose makes those of ordinary skill in the art can understand content of the present invention and is implementing according to this; the scope of this patent also not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.
Claims (13)
1, a kind of electric current type sensing apparatus of high-density multi-port cache, it is applied to it is characterized in that: comprising in the embedded flash memory program:
One multiport cache unit, it sends one 0 or 1 selection signal, and exports a start voltage and a cell current according to this selection signal;
One emulation flash memory cell, it is one Embedded, defines a reference voltage by an emulation bit line according to this start voltage, thereby produces a reference current and with its output; And
One electric current comparison amplifier, it is responded to this cell current and this reference current, compares its two difference, and with its output to carry out the imprinting of low capacity section.
2, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: described electric current comparison amplifier is that framework is on a differential circuit.
3, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: the numerical value of described reference current is half of this cell current.
4, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: described reference voltage level is greater than this start voltage value.
5, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: described reference voltage level is done the reference voltage level of the operation of eliminating or editing for utilizing this emulation bit line.
6, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: described selection signal is 0 o'clock, and this difference is this reference current value.
7, the electric current type sensing apparatus of high-density multi-port cache according to claim 1 is characterized in that: described this selection signal is 1 o'clock, and this difference is the negative value of this reference current.
8, a kind of current type method for sensing of high-density multi-port cache, it is applied in the embedded flash memory program, comprise following steps: utilize a multiport cache unit to send one 0 or 1 selection signal, and export a start voltage and a cell current according to this selection signal;
Utilize an emulation bit line of an Embedded emulation flash memory cell to define a reference voltage, and produce a corresponding reference current according to this start voltage; And
This cell current and this reference current are sent to an electric current comparison amplifier, and it is the difference of this cell current of induction and this reference current, and output is to carry out the imprinting of low capacity section.
9, the current type method for sensing of described high-density multi-port cache according to Claim 8 is characterized in that: the numerical value of described reference current is half of this cell current.
10, the current type method for sensing of described high-density multi-port cache according to Claim 8, it is characterized in that: described reference voltage level is greater than this start voltage value.
11, the current type method for sensing of described high-density multi-port cache according to Claim 8 is characterized in that: described reference voltage level can utilize this emulation bit line to do to eliminate or editor's action.
12, the current type method for sensing of described high-density multi-port cache according to Claim 8, it is characterized in that: described selection signal is 0 o'clock, this difference is this reference current value.
13, the current type method for sensing of described high-density multi-port cache according to Claim 8, it is characterized in that: described selection signal is 1 o'clock, this difference is the negative value of this reference current.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025997 CN1866389A (en) | 2005-05-19 | 2005-05-19 | Electric current type sensing apparatus and method for high-density multi-port cache |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025997 CN1866389A (en) | 2005-05-19 | 2005-05-19 | Electric current type sensing apparatus and method for high-density multi-port cache |
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| CN1866389A true CN1866389A (en) | 2006-11-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101763887A (en) * | 2009-11-18 | 2010-06-30 | 上海宏力半导体制造有限公司 | Reading device of storage unit and reading method thereof |
-
2005
- 2005-05-19 CN CN 200510025997 patent/CN1866389A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101763887A (en) * | 2009-11-18 | 2010-06-30 | 上海宏力半导体制造有限公司 | Reading device of storage unit and reading method thereof |
| CN101763887B (en) * | 2009-11-18 | 2013-06-05 | 上海宏力半导体制造有限公司 | Reading device of storage unit and reading method thereof |
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