CN1526639A - Bi2Te3-base compound nanotube - Google Patents
Bi2Te3-base compound nanotube Download PDFInfo
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- CN1526639A CN1526639A CNA031512763A CN03151276A CN1526639A CN 1526639 A CN1526639 A CN 1526639A CN A031512763 A CNA031512763 A CN A031512763A CN 03151276 A CN03151276 A CN 03151276A CN 1526639 A CN1526639 A CN 1526639A
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- nanotube
- bi2te3
- base compound
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 28
- 239000002071 nanotube Substances 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 4
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 4
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000008139 complexing agent Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229960000935 dehydrated alcohol Drugs 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229960004756 ethanol Drugs 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 2
- 229940038773 trisodium citrate Drugs 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention discloses one kind of Bi2Te3-base compound nanotube. The Bi2Te3-base compound nanotube has the components including: p-type or n-type Bi2Te3-base compound formed with Sb and/or Bi elements and Se and/or Te elements in the atom number ratio of 1.9-2.1 to 2.9-3.1 in 95-100 atom%; and one or several doping elements of Sn, Pb, I, Br, Al and Li in 0-5 atom%. The Bi2Te3-base compound nanotube has opened or closed end, 5-150 nm diameter, 1-25 nm wall thickness and 1-50 nm length. The nanotube has unique microstructure capable of producing unique physical and chemical characteristic and special transport characteristic, is hopeful in raising the thermoelectric performance of Bi2Te3-base compound, and may be applied widely in physical, chemical, material, microelectronics and other fields.
Description
Technical field
The present invention relates to semiconducting nanotubes.Relate to Bi specifically
2Te
3The based compound nanotube.
Background technology
From Japanese carbonization scholar Iijima in 1991 since (S.Lijima) find carbon nanotube (CNTs) first, people have carried out extensive and deep research to synthetic, structure, performance and the application etc. of carbon nanotube.Carbon nanotube has the seamless tubular shaped structure that unique one dimension hollow graphite sheet is curled into because of it, and have a series of uniquenesses and excellent character, as the height chemical stability, (Theoretical Calculation shows high physical strength, its tensile strength is 100 times of steel, and density have only steel 1/6), special electric property (different according to caliber and helicity, can be the conductor not worse than copper, also can be semi-conductor).Carbon nanotube is the material that a class has the applications well prospect, nowadays has been widely used in a plurality of high-tech areas such as physics, chemistry, material, electronic technology.
Since carbon nanotube, other various one dimension tubular nanometer materials are because its special structure and application prospects also receive much concern BN, BC
3, BC
2N, WS
2, MoS
2Come out one after another Deng nanotube, but still do not satisfy the demand of a plurality of researchs and Application Areas, the nanotube of more materials and type still awaits R and D.
Bi
2Te
3It is the semiconductor material of a kind of narrow band gap (energy gap is 0.13ev).Bi
2Te
3Based compound has high conductivity simultaneously owing to it and lower thermal conductivity becomes the best room temperature type thermoelectric material of present performance, but its thermoelectricity capability still awaits further raising.Bi
2Te
3Be the compound that is made of V, VI family element, preferably in the material, it is the stable binary compound of molecular weight maximum in chemical stability.Bi
2Te
3Have the accurate laminate structure of hexahedron, on same one deck of this structure, have identical atomic species.Arranging by " Te-Bi-Te-Bi-Te-" mode between atomic shell, is the Van der Waals force combination between adjacent two Te layers.Theoretical investigation shows, the unique microstructures of this kind nanotube may produce unique physics, chemical property, thereby makes this kind material possess special transport property and can be used for preparing high performance thermoelectric material; In addition, Bi
2Te
3The based compound nanotube also might obtain other application in fields such as material, physics, chemistry, electronics.
Summary of the invention
The purpose of this invention is to provide a kind of Bi
2Te
3The based compound nanotube.
Bi of the present invention
2Te
3The based compound nanotube, its component and content are as follows:
By Sb or/and Bi element and Se or/and the Te element is p type or the n type Bi that 1.9～2.1: 2.9～3.1 ratio forms in atomic ratio
2Te
3Based compound accounts for 95～100% of material total atom per-cent;
Among doped element atom Sn, Pb, I, Br, Al or the Li one or more account for 0～5% of material total atom per-cent.
Bi of the present invention
2Te
3The based compound nanotube geometric properties be: diameter is in 5～150 nanometers, wall thickness 1～25 nanometer, 1～50 micron of length, pipe open-ended or remain silent.
Bi of the present invention
2Te
3The hydrothermal/solvent by the use of thermal means is adopted in the preparation of based compound nanotube, may further comprise the steps:
1) with Sb or/and Bi element and Se or/and the simple substance of the simple substance of Te element or compound and/or doped element or compound, in deionized water or organic solvent, the component and the content of final product are as follows according to the determined mixed of final product chemical ingredients: in Sb or/and Bi and Se or/and Te element atomic ratio is p type or the n type Bi that 1.9～2.1: 2.9～3.1 ratio forms
2Te
3Based compound accounts for 95～100% of material total atom per-cent, and one or more among doped element atom Sn, Pb, I, Br, Al or the Li account for 0～5% of material total atom per-cent;
2) above-mentioned mixed solution is placed in the reaction vessel of autoclave, add the reductive agent of q.s, then sealing immediately;
3) certain temperature and 6～50 hours postcooling of insulation reaction that reaction vessel is warming up in 100～300 ℃ of scopes arrives room temperature;
4) collect the interior solid reaction product of reaction vessel, repeatedly clean after drying, obtain material of the present invention through deionized water, organic solvent and/or dilute acid soln.
For controls reaction speed with generate the particle diameter of product, in step 2) in can add an amount of alkaline conditioner and complexing agent.
Above-mentioned steps 1) said Sb in or/and Bi element and Se or/and the compound of the compound of Te element and doped element can be muriate, oxide compound, nitrate, vitriol or carbonate etc.
Above-mentioned steps 1) said organic solvent can be ethanol, acetone, N in, dinethylformamide (DMF), pyridine, quadrol, benzene or toluene etc., said alkaline conditioner can be NaOH, KOH etc., and said complexing agent can be EDTA disodium salt, citric acid, Trisodium Citrate or ethylenediamine tetraacetic acid (EDTA) etc.
Above-mentioned steps 2) said reductive agent can adopt NaBH in
4, KBH
4Etc. alkali-metal hydroborates or basic metal such as Na, K.Said organic solvent can be ethanol, acetone, tetracol phenixin etc. in the step 4).
The present invention has developed a kind of novel Bi
2Te
3The based compound nanotube because its unique microtexture can produce unique physics, chemical property and special transport property, will be expected to improve Bi
2Te
3The thermoelectricity capability of based compound, and can be widely used in fields such as physics, chemistry, material, microelectronics.
Embodiment
Embodiment 1
1, raw material: analytical pure BiCl
3, the high purity tellurium powder (＞99.99wt%), in Bi: the Te atomic ratio is 2: 3 a ratio batching.
2, with the above-mentioned raw materials mixed dissolution in deionized water, and add a small amount of complexing agent EDTA disodium salt and alkaline conditioner NaOH.
3, above-mentioned mixed solution is placed in the reaction vessel of autoclave, add the soluble reducing agent NaBH of capacity
4, sealing immediately then;
4, reaction vessel is warming up to 150 ℃, and is incubated 24 hours and reacts, then cool to room temperature;
5, collect the interior solid reaction product of reactor, behind the repetitive scrubbing of deionized water, dehydrated alcohol, acetone and other organic solvent,, obtain powdery product in 100 ℃ of following vacuum-dryings 6 hours.
Find that with JEM-2010 type transmission electron microscope observation reaction product is mean diameter 80nm, mean length 18 micron/nano pipes, nanotube average wall thickness 15 nanometers, nanotube ends have opening and the two kinds of forms of remaining silent.
Embodiment 2
1, raw material: analytical pure BiCl
3, the high purity tellurium powder (＞99.99wt%).In Bi: the Te atomic ratio is 2: 3 a ratio batching.
2, with the above-mentioned raw materials mixed dissolution in dehydrated alcohol, and add a small amount of complexing agent Trisodium Citrate and alkaline conditioner KOH.
3, above-mentioned mixed solution is placed in the reaction vessel of autoclave, add the soluble reducing agent KBH of q.s
4, sealing immediately then;
4, reaction vessel is warming up to 180 ℃, and is incubated 24 hours and reacts, then cool to room temperature;
5, collect the interior solid reaction product of reactor, behind the repetitive scrubbing of deionized water, dehydrated alcohol, acetone and other organic solvent,, obtain powdery product in 100 ℃ of following vacuum-dryings 6 hours.
Find that with JEM-2010 type transmission electron microscope observation reaction product is mean diameter 70nm, mean length 7 micron/nano pipes, nanotube average wall thickness 5 nanometers, nanotube ends have opening and the two kinds of forms of remaining silent.
Claims (2)
1. Bi
2Te
3The based compound nanotube is characterized in that its component and content are as follows:
By Sb or/and Bi element and Se or/and the Te element is p type or the n type Bi that 1.9～2.1: 2.9～3.1 ratio forms in atomic ratio
2Te
3Based compound accounts for 95～100% of material total atom per-cent;
Among doped element atom Sn, Pb, I, Br, Al or the Li one or more account for 0～5% of material total atom per-cent.
2. Bi according to claim 1
2Te
3Based compound nanotube, the diameter that it is characterized in that nanotube be in 5～150 nanometers, wall thickness 1～25 nanometer, 1～50 micron of length, tube end be opening or remain silent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031512763A CN1526639A (en) | 2003-09-25 | 2003-09-25 | Bi2Te3-base compound nanotube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031512763A CN1526639A (en) | 2003-09-25 | 2003-09-25 | Bi2Te3-base compound nanotube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1526639A true CN1526639A (en) | 2004-09-08 |
Family
ID=34286995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031512763A Pending CN1526639A (en) | 2003-09-25 | 2003-09-25 | Bi2Te3-base compound nanotube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1526639A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100351409C (en) * | 2005-12-30 | 2007-11-28 | 北京科技大学 | Nanometer SiC/ Bi2Te3 base thermoelectric material preparation method |
| CN101254903B (en) * | 2008-03-21 | 2010-12-08 | 中国科学院上海硅酸盐研究所 | Method for preparing bismuth telluride nano-tube |
| CN104409623A (en) * | 2014-10-21 | 2015-03-11 | 浙江大学 | Processing method for improving performance of N-type bismuth telluride base powder sinter block thermoelectric material |
| CN115490212A (en) * | 2022-10-13 | 2022-12-20 | 中国科学技术大学 | Near-infrared active periodic plasma heterojunction photo-anode material and preparation method thereof |
-
2003
- 2003-09-25 CN CNA031512763A patent/CN1526639A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100351409C (en) * | 2005-12-30 | 2007-11-28 | 北京科技大学 | Nanometer SiC/ Bi2Te3 base thermoelectric material preparation method |
| CN101254903B (en) * | 2008-03-21 | 2010-12-08 | 中国科学院上海硅酸盐研究所 | Method for preparing bismuth telluride nano-tube |
| CN104409623A (en) * | 2014-10-21 | 2015-03-11 | 浙江大学 | Processing method for improving performance of N-type bismuth telluride base powder sinter block thermoelectric material |
| CN104409623B (en) * | 2014-10-21 | 2017-02-15 | 浙江大学 | Processing method for improving performance of N-type bismuth telluride base powder sinter block thermoelectric material |
| CN115490212A (en) * | 2022-10-13 | 2022-12-20 | 中国科学技术大学 | Near-infrared active periodic plasma heterojunction photo-anode material and preparation method thereof |
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