CN1588799A - Driving protective circuit for inverse resistance type insulated gate bipolar transistor - Google Patents
Driving protective circuit for inverse resistance type insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN1588799A CN1588799A CN 200410068841 CN200410068841A CN1588799A CN 1588799 A CN1588799 A CN 1588799A CN 200410068841 CN200410068841 CN 200410068841 CN 200410068841 A CN200410068841 A CN 200410068841A CN 1588799 A CN1588799 A CN 1588799A
- Authority
- CN
- China
- Prior art keywords
- resistance
- bipolar transistor
- circuit
- gate bipolar
- links
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title claims description 7
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 35
- 230000009194 climbing Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000002457 bidirectional effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 4
- 206010019133 Hangover Diseases 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Landscapes
- Electronic Switches (AREA)
Abstract
This invented driving protection circuit for inverse impadance insulated-gate bipolar transistor is composed of: (1). a controller; (2). a three-section driving circuit, comprising a dynamic charging current source, a dynamic discharging current source a push-pull amplifier circuit series connected with them; (3). a detecting circuit, when the device being of power-on, it cotnrols the rising-rate of the current at the collector; on the other hand, when power-off, it controls the rising-rate of the voltage at the collector; and (4). a RB-IGBT over-current protection circuit for V(Ce) detection, being connected to the collector of said inverse impadance insulated-gate bipolar transistor. It has two V(Ce) detection schemes.
Description
Technical field
The invention belongs to the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor, belong to the control technology field of RB-IGBT.
Background technology
Inverse resistance type insulated gate bipolar transistor (Reverse Blocking Insulated Gate Bipolar Transistor) is called for short RB-IGBT, is a kind of novel power semiconductor device.With respect to common IGBT device, it has forward and reverse blocking ability of voltage.RB-IGBT can be used to form bidirectional switch, realizes the two-way flow of energy, is mainly used in the matrix converter at present.Fig. 1 has provided the bi-directional switch structure that adopts RB-IGBT and common IGBT.As can be seen, adopt the required power device of the bidirectional switch of RB-IGBT minimum.Simultaneously, adopt the bidirectional switch of the RB-IGBT drop of pressure that powers on to be significantly smaller than the bidirectional switch of common IGBT during stable state, so power loss also significantly reduce.
Each link title of RB-IGBT as shown in Figure 2.Because RB-IGBT is the voltage-type device, can pass through grid-emitter voltage V
GeControl realize the turn-on and turn-off of device.
The conducting of RB-IGBT and the essence of turn off process are the charge and discharge process of driving power to its grid.Apply constant charging or leakage current as grid, then grid in its switching process-emitter voltage V to RB-IGBT
Ge, collector current i
cAnd collector emitter voltage V
CeOscillogram as shown in Figure 3, Figure 4.
RB-IGBT opening process shown in Figure 3 can be divided into three phases:
(1) drive and to open after instruction sends, driving power is to gate capacitance charges, grid voltage V
GeRise its rate of rise direct ratio and drive current.Rising to threshold voltage (t
1) before, IGBT still is in off state, collector electrode only flows through minimum forward leakage current;
(2) V
GeAfter surpassing threshold voltage, collector current i
cBegin rapidly to rise, and at t
2Constantly reach maximum (follow the overshoot spike of some electric currents, can reduce this spike by suppressing collector current climbing di/dt), at this moment, IGBT enters the Miller effect district, grid equivalent input capacitance infinity, and an of short duration platform appears in GE voltage.Voltage V between the CE in this process
CeChange little;
(3) after the Miller effect began, CE voltage began to descend, up to V
CeReach the on state voltage value, IGBT enters conducting state.Grid voltage V
GeAlso because the continuation of electric capacity charging and slowly rise to final drive level.
RB-IGBT turn off process shown in Figure 4 can be divided into three phases equally:
(1) after driving shutoff instruction was sent, grid capacitance was discharged by driving power, V
GeDescend, the slope of decline is proportional to the leakage current that driving power provides.Be similar to and open characteristic, at t
5Constantly enter the Miller effect district;
(2) in the Miller effect district, V
CeBegin to rise.At t
6Constantly, V
CeWhen reaching peak value (spike that has voltage equally reduces the climbing dv/dt of CE voltage, can effectively suppress this spike), the Miller effect finishes.Collector current i in this process
cSubstantially remain unchanged;
(3) t
6Constantly, V
GeContinue to descend, cause collector current i
cReduce.V
GeBe reduced to after the turn-on threshold voltage, the inside equivalence MOSFET of IGBT turn-offs rapidly.Owing to do not have the existence of inverse parallel diode, the i of RB-IGBT
cThere is reversely restoring process.Subsequently, the PNP transistor of inner equivalence does not have bleed-off circuit, and turn-off speed is slower, thereby forms shutoff hangover electric current.This hangover is to be subjected to IGBT grid-controlled, generally about the us level.
From the process of switch as can be seen, the size of charging and discharging currents has determined RB-IGBT to open to turn-off required total time of transient process.Simultaneously, the also size of direct ratio and charging and discharging currents almost of opening process collector current climbing di/dt and turn off process collector voltage climbing dv/dt.The di/dt of devices switch process and the increase of dv/dt can cause rolling up of electromagnetic interference EMI, may cause the latching effect of RB-IGBT simultaneously.Therefore, the design philosophy of drive circuit is: when realizing the quick break-make of device, suppress the size of di/dt and dv/dt.
At present integrated IGBT chip for driving is (as the EXB841 of Japanese fuji company, the MC33153 of U.S. Motorola Inc. etc.) adopt light-coupled isolation usually, recommend the structure of output, chip for driving ground (0V potential point) directly linked to each other with the IGBT emitter, thereby and output voltage signal is connected to the IGBT grid and controls its conducting and shutoff.Its fundamental diagram as shown in Figure 5.This drive circuit only depends on driving resistor R104, the size of the size decision drive current of R105, can't in the switch transient process, control in real time charging and discharging currents, therefore be difficult to realize simultaneously that quick break-make and inhibition open the di/dt and the dv/dt of turn off process, in most cases can only be simply compromise.
The integrated overcurrent protection logic of device in the common IGBT drive circuit.V is generally adopted in overcurrent protection
CeThe way that detects.Saturation voltage drop during the IGBT conducting is linear substantially with the electric current that flows through IGBT.When particularly short circuit occurred, IGBT withdrawed from saturated, V
CeTo sharply rise.Therefore only need to detect V
Ce, when it surpasses certain threshold value, and and gate drive signal do logical, can judge whether overcurrent of device.With MC33153 is example, and its overcurrent protection principle as shown in Figure 6.Under the IGBT shutoff situation, the Q103 conducting, comparator is output as " low ", the shielding protection action; When IGBT had Continuity signal, Q103 turn-offed.Under the operate as normal, its collector potential is saturated tube voltage drop, the D101 conducting, and comparator normal phase input end current potential is output as " low " less than the reverse input end current potential, does not protect; If IGBT has Continuity signal, and overcurrent, then collector potential raises rapidly, and after certain potentials, comparator in-phase input end current potential surpasses reverse input end, output " height ", then protective circuit is started working.
Because the fast recovery and protection diode of the common inverse parallel of common IGBT D, so V
CeScope only may be from the high pressure of forward to negative diode tube pressuring drop, also, when common IGBT bears reverse voltage, form path, its V by the inverse parallel diode
CeCan not be operated in the high pressure of negative sense.Therefore, by diode D101 forceful electric power and driving loop are isolated during the forward high pressure, make the drive circuit trouble free service.
Yet RB-IGBT does not have inverse parallel diode, V
CePositive negative sense working limit is suitable, can see that if adopt the connection of present integrated drive chips protective circuit, D101 can directly introduce the damage that drive circuit causes driving power with the high pressure of negative sense, even burns device.Therefore, overcurrent protection function all is not suitable for RB-IGBT in the present ripe IGBT chip for driving.
Summary of the invention
The present invention is directed to the weak point of traditional push-pull driver circuit, propose a kind of syllogic drive circuit, by introducing two dynamic current sources, when improving devices switch speed, the di/dt of restriction opening process and the dv/dt of turn off process.At the operating characteristic of RB-IGBT, a kind of new V has been proposed simultaneously
CeDetection method is simultaneously according to V
CeMagnitude range has designed two kinds of different overcurrent protection strategies.
On the dynamic characteristic that turns on and off from RB-IGBT as can be seen, when opening the collector current uphill process and when turn-offing the time of collector voltage uphill process can be controlled by the speed that grid discharges and recharges.Therefore, can consider to control dynamically grid charging and discharging currents size, when needs suppress di/dt and dv/dt, reduce charging and discharging currents, and strengthen charging and discharging currents, then be expected in the quick break-make that realizes device, di/dt and dv/dt be limited in allowed limits in other period.
The invention is characterized in:
(1) controller;
(2) syllogic drive circuit comprises:
Dynamic charging current source, contain:
A N-channel MOS FET M1, its source electrode connects positive supply, link to each other with grid behind the diode D3 of drain electrode through just connecing, resistance of serial connection between grid and positive supply links to each other with the charging current source control signal output ends of controller behind diode D1 of negative pole reversal connection of pipe D3;
A P channel mosfet M2, its source electrode also connects positive supply, and the drain electrode with pipe M1 behind the grid connecting resistance links to each other;
Dynamic leakage current source, contain:
A P channel mosfet M3, its source electrode connects negative supply, link to each other with drain electrode behind the diode D4 of grid through just connecing, grid with negative supply links to each other after connecing a resistance again simultaneously, links to each other with the leakage current source control signal output ends of controller behind diode D2 of pipe D4 reversal connection;
A N-channel MOS FET M4, its source electrode also connects negative supply, and the drain electrode with pipe M3 behind the grid connecting resistance links to each other;
Push-pull circuit, contain:
First branch road that is composed in series by N transistor npn npn Q1 and resistance that is connected in series successively with positive supply;
Second branch road that is composed in series by P transistor npn npn Q2 and resistance that is connected in series successively with negative supply;
The tie point of described first branch road and second branch road is with when driven inverse resistance type insulated gate bipolar transistor grid links to each other, and links to each other through resistance and pipe M2 and the drain electrode of managing M4 respectively again;
(3) driven inverse resistance type insulated gate bipolar transistor is respectively when turn-on and turn-off, its collector electrode-emission voltage across poles V
CeDecline constantly and the testing circuit constantly that rises, it contains:
The capacitance-resistance branch road that is in series by electric capacity and resistance that links to each other with driven inverse resistance type insulated gate bipolar transistor collector electrode successively;
V
CeDecline testing circuit constantly, comprising:
A P channel mosfet M5, its source electrode connects positive supply, and grid connects the resistance terminal of above-mentioned capacitance-resistance branch road, and drain electrode is connecting to neutral volt power supply behind current-limiting resistance; It grid and source electrode between and be connected to a voltage stabilizing D5 and a resistance;
Article one, by the branch road of diode D6 and resistance parallel connection, the positive pole of its pipe D6 links to each other with the drain electrode of pipe M5 behind a resistance;
Article one, by the branch road of a voltage-stabiliser tube D7 and an electric capacity parallel connection, the positive pole of pipe D7 is connecting to neutral volt power supply also, and the negative pole of pipe D7 links to each other with the negative pole of pipe D6, uses V again with on the controller simultaneously
Gc2The V of expression
CeDescending constantly, the detection signal input links to each other;
V
CeRising is testing circuit constantly, comprising:
A N-channel MOS FET M6, its source electrode connects positive supply behind resistance, drain electrode connecting to neutral volt power supply, oppositely and be connected to a voltage-stabiliser tube and resistance, this grid links to each other with resistance in the above-mentioned capacitance-resistance branch road again simultaneously between grid and zero volt power supply.
(4) collector electrode of inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and it contains:
A big resistance, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to amplitude limiter circuit over the ground;
A feedback amplifier amplifier, its positive input terminal connects above-mentioned big resistance through current-limiting resistance, and negative input end connects the emitter of above-mentioned inverse resistance type insulated gate bipolar transistor through another current-limiting resistance;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
(5) collector electrode of inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and it contains:
A big resistance, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to two positive and negative voltage limiter circuits respectively;
A feedback amplifier amplifier, its positive input terminal connects above-mentioned big resistance through current-limiting resistance, and negative input end connects the emitter of above-mentioned inverse resistance type insulated gate bipolar transistor through another current-limiting resistance;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
Experiment showed, the present invention when realizing the quick break-make of device, control and suppressed the climbing of collector current of opening process and the climbing of turn off process collector voltage.
Description of drawings
Fig. 1. the structure of bidirectional switch.
Each link title of Fig. 2 .RB-IGBT.
Transient process when Fig. 3 .RB-IGBT opens.
Transient process when Fig. 4 .RB-IGBT turn-offs.
Fig. 5. traditional push-pull driver circuit.
Fig. 6. common IGBT current foldback circuit schematic diagram (MC33153).
The syllogic drive circuit of Fig. 7 .RB-IGBT.
Fig. 8. charging current source control procedure schematic diagram when opening.
Fig. 9 .V
CeTesting circuit constantly descends.
Figure 10. leakage current source control procedure schematic diagram during shutoff.
Figure 11 .V
CeTesting circuit constantly rises.
Figure 12. based on V
CeThe RB-IGBT overcurrent protection principle schematic that detects:
B. scheme 2.
Embodiment
The syllogic drive circuit schematic circuit that the present invention proposes as shown in Figure 7.
On traditional push-pull configuration (Q1, Q2, R7, R8), add two dynamic charging and discharging currents sources (M1 wherein, M2, D1, D3, R1, R3, R5 constitutes the charging current source of opening process; M3, M4, D2, D4, R2, R4, R6 constitutes the discharging current source of turn off process).Control circuit is realized by programmable digital logic chip GAL and testing circuit.
On device was selected: M1 used N-channel MOS FET 2N7000, and the typical case opens turn-off time 10ns; M2 uses P channel mosfet IRFR5505.Conducting time-delay+rise time 40ns, turn off delay time+fall time 36ns.M3 uses P channel fet VP0300.The typical case opens turn-off time 30ns; M4 uses N-channel MOS FET IRFR220.Conducting time-delay+rise time 30ns, turn off delay time+fall time 32ns.The current source control logic is used GAL16v8D-25LP, typical case's time-delay 25ns.
Fig. 8 has provided the control logic of charging current source in the RB-IGBT opening process.Each time point of its time shaft is corresponding one by one with Fig. 3.Its driving process also can be divided into three phases:
(1) when sending, drive circuit opens signal t
0After, the conducting charging current source strengthens the gate charges electric current at once.Since the increase of drive current, t
0To t
1Time can shorten greatly.
(2) when detecting V
GeSurpass threshold voltage V
Ge (th)Back (t
1Constantly), collector current i
cBegin to occur.This moment is the cut-off current source at once, guarantees t
1To t
2The drive current of time period is suitable with the drive current of traditional push-pull configuration, so i
cClimbing di/dt also just basic identical with the di/dt of push-pull configuration.
(3) i
cAfter rising to maximum, V
CeBegin (the t that descends
2Constantly).At this moment conducting current source again again is until V
GeSurpass 13V (t
3Fail constantly).V like this
GeThe Miller effect time and V
CeThe voltage hangover time is shortened, and the opening process loss of RB-IGBT is also just reduced.
V
CeDecline constantly can adopt circuit as shown in Figure 9 to realize.Among Fig. 9, V in the steady-state process
CeConstant, there is not electric current to flow through among the R9, not conducting of P channel mosfet M5; V
CeDuring decline, electric current flows through R9, the pressure drop conducting M1 on it, thus the output control signal is sent to logic processing circuit, the conducting charging current source.
Each time point of its time shaft of control logic that Figure 10 has provided leakage current source in the IGBT turn off process is corresponding one by one with Fig. 4.Equally, turn-off the driving process and also roughly be divided into three sections:
(1) sends cut-off signals (t when drive circuit
4Constantly), the grid leakage current is strengthened in conducting leakage current source at once, to reduce t
4To t
5This section time of delay.
(2) work as V
CeBegin (the t that rises
5In the time of constantly), turn-off the leakage current source at once.Can guarantee V like this
CeThe climbing dv/dt and the dv/dt of traditional push-pull configuration basic identical.
(3) when detecting V
CeBack (t no longer rises
6Constantly), conducting leakage current source reduces the turn off process loss to shorten the turn-off time again.
With opening process V
CeDescend moment detection type seemingly, V
CeRising constantly can adopt as the circuit of Figure 11 and realize.Among Figure 11, V in the steady-state process
CeConstant, there is not electric current to flow through among the R14, not conducting of N-channel MOS FET M6; V
CeDuring rising, electric current flows through R14, the pressure drop conducting M6 on it, thus the output control signal is sent to logic processing circuit, turn-offs the leakage current source.
The present invention proposes two kinds of V at RB-IGBT
CeDetection method, and be used in the current foldback circuit.Its schematic diagram as shown in figure 12.
By the bigger resistance of resistance with V
CeBe incorporated into and drive the loop, and with its amplitude limit to the driving power scope.Carry out the isolation of signal amplifies to improve accuracy of detection by amplifier.The selection of amplifier must select that bias current is less for use, speed faster device (as LF353, maximum bias current Ib=8nA).Signal after amplifying is carried out simple capacitance-resistance filter, eliminate and disturb the noise that brings, with the foundation of this signal as the overcurrent protection action.
In addition, because long term device is operated in heating easily under the situation of big electric current, therefore, if device longly also wished can cut off the device operation and report to the police in big electric current (as rated current of devices 100A, thinking that then 70A is general overcurrent) the following operating time of situation.So according to the saturation characteristics of inverse resistance type IGBT, will protect action to be divided into two parts: (1) is as break-over of device and 2.5V＜V
CeDuring＜3.0V, be judged as general overcurrent, time-delay 100us is not if over-current phenomenon avoidance disappears and then falls the soft shutoff inverse resistance type of grid voltage IGBT device slowly; (2) as break-over of device and V
CeDuring＞3.0V, be judged as short circuit overcurrent, grid voltage is reduced to 10V to improve the ability that device bears short circuit current, after the time-delay 10us, do not disappear then soft shutoff IGBT as if short circuit current.The logic of protection uses the GAL device to control.
Simultaneously, in case after judging real overcurrent, to the control loop output alarm signal, control loop adopts necessary strategy to carry out the system protection action to drive circuit by optocoupler.
Claims (3)
1. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor is characterized in that, it contains:
(1) controller;
(2) syllogic drive circuit comprises:
Dynamic charging current source, contain:
A N-channel MOS FET M1, its source electrode connects positive supply, link to each other with grid behind the diode D3 of drain electrode through just connecing, resistance of serial connection between grid and positive supply links to each other with the charging current source control signal output ends of controller behind diode D1 of negative pole reversal connection of pipe D3;
A P channel mosfet M2, its source electrode also connects positive supply, and the drain electrode with pipe M1 behind the grid connecting resistance links to each other; Dynamic leakage current source, contain:
A P channel mosfet M3, its source electrode connects negative supply, link to each other with drain electrode behind the diode D4 of grid through just connecing, grid with negative supply links to each other after connecing a resistance again simultaneously, links to each other with the leakage current source control signal output ends of controller behind diode D2 of pipe D4 reversal connection;
A N-channel MOS FET M4, its source electrode also connects negative supply, and the drain electrode with pipe M3 behind the grid connecting resistance links to each other; Push-pull circuit, contain:
First branch road that is composed in series by N transistor npn npn Q1 and resistance that is connected in series successively with positive supply;
Second branch road that is composed in series by P transistor npn npn Q2 and resistance that is connected in series successively with negative supply;
The tie point of described first branch road and second branch road is with when driven inverse resistance type insulated gate bipolar transistor grid links to each other, and links to each other through resistance and pipe M2 and the drain electrode of managing M4 respectively again;
(3) driven inverse resistance type insulated gate bipolar transistor is respectively when turn-on and turn-off, voltage V between its Collector Emitter
CeDecline constantly and the testing circuit constantly that rises, it contains:
The capacitance-resistance branch road that is in series by electric capacity and resistance that links to each other with driven inverse resistance type insulated gate bipolar transistor collector electrode successively;
V
CeDecline testing circuit constantly, comprising:
A P channel mosfet M5, its source electrode connects positive supply, and grid connects the resistance terminal of above-mentioned capacitance-resistance branch road, and drain electrode is connecting to neutral volt power supply behind current-limiting resistance; It grid and source electrode between and be connected to a voltage stabilizing D5 and a resistance;
Article one, by the branch road of diode D6 and resistance parallel connection, the positive pole of its pipe D6 links to each other with the drain electrode of pipe M5 behind a resistance;
Article one, by the branch road of a voltage-stabiliser tube D7 and an electric capacity parallel connection, the positive pole of pipe D7 is connecting to neutral volt power supply also, and the negative pole of pipe D7 links to each other with the negative pole of pipe D6, uses V again with on the controller simultaneously
Gc2The V of expression
CeDescending constantly, the detection signal input links to each other;
V
CeRising is testing circuit constantly, comprising:
A N-channel MOS FET M6, its source electrode connects positive supply behind resistance, drain electrode connecting to neutral volt power supply, oppositely and be connected to a voltage-stabiliser tube and resistance, this grid links to each other with resistance in the above-mentioned capacitance-resistance branch road again simultaneously between grid and zero volt power supply.
2. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor according to claim 1, it is characterized in that: the collector electrode of described inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and it contains:
A big resistance, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to amplitude limiter circuit over the ground;
A feedback amplifier amplifier, its positive input terminal connects above-mentioned big resistance through current-limiting resistance, and negative input end connects the emitter of above-mentioned inverse resistance type insulated gate bipolar transistor through another current-limiting resistance;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
3. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor according to claim 1, it is characterized in that: the collector electrode of described inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and it contains:
A big resistance, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to two positive and negative voltage limiter circuits respectively;
A feedback amplifier amplifier, its positive input terminal connects above-mentioned big resistance through current-limiting resistance, and negative input end connects the emitter of above-mentioned inverse resistance type insulated gate bipolar transistor through another current-limiting resistance;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100688412A CN100405738C (en) | 2004-07-09 | 2004-07-09 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100688412A CN100405738C (en) | 2004-07-09 | 2004-07-09 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588799A true CN1588799A (en) | 2005-03-02 |
| CN100405738C CN100405738C (en) | 2008-07-23 |
Family
ID=34604175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100688412A Expired - Fee Related CN100405738C (en) | 2004-07-09 | 2004-07-09 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100405738C (en) |
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764595A (en) * | 2009-11-23 | 2010-06-30 | 宁波德斯科电子科技有限公司 | IGBT drive and protection circuit |
| CN101882860A (en) * | 2010-06-23 | 2010-11-10 | 山东大学威海分校 | Novel insulated gate bipolar translator (IGBT) drive and protection circuit |
| CN101401307B (en) * | 2006-12-06 | 2011-09-14 | 罗姆股份有限公司 | Drive circuit and semiconductor device using the same |
| CN102290795A (en) * | 2011-08-30 | 2011-12-21 | 东莞市精诚电能设备有限公司 | IGBT (insulated gate bipolar translator) driver with good protection effect |
| CN101752841B (en) * | 2008-12-19 | 2012-08-22 | 比亚迪股份有限公司 | Insulated gate bipolar transistor (IGBT) protection circuit and motor control system |
| CN102804605A (en) * | 2009-06-26 | 2012-11-28 | 西门子公司 | Commutation method of an electronic power converter phase with reverse-conducting IGBTs |
| CN103199827A (en) * | 2013-02-22 | 2013-07-10 | 西安永电电气有限责任公司 | Protective circuit and driving circuit and control method of insulated gate bipolar transistor (IGBT) |
| CN103346763A (en) * | 2013-06-18 | 2013-10-09 | 山东大学（威海） | Insulated gate bipolar transistor drive protective circuit |
| CN104135213A (en) * | 2014-07-31 | 2014-11-05 | 苏州汇川技术有限公司 | Motor controller with short circuit protection function and motor control system with motor controller |
| CN104300954A (en) * | 2014-09-30 | 2015-01-21 | 苏州天准精密技术有限公司 | Emergency stop circuit, packaging body and emergency stop circuit device based on double MOS transistors |
| CN104378097A (en) * | 2014-09-29 | 2015-02-25 | 株洲变流技术国家工程研究中心有限公司 | Drive system and method of insulated gate bipolar transistor |
| CN104467711A (en) * | 2013-09-24 | 2015-03-25 | 索尼公司 | Amplification circuit |
| CN104659757A (en) * | 2014-12-25 | 2015-05-27 | 深圳青铜剑电力电子科技有限公司 | IGBT overvoltage protection circuit and IGBT overvoltage protection method |
| CN101816128B (en) * | 2007-10-05 | 2015-09-02 | 爱立信电话股份有限公司 | For the drive circuit of power switch component |
| CN105119590A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT high efficient drive circuit |
| CN105226977A (en) * | 2014-05-29 | 2016-01-06 | 艾默生网络能源有限公司 | A kind of control method of inverter, device and uninterrupted power supply |
| CN105656311A (en) * | 2014-11-11 | 2016-06-08 | 产晶积体电路股份有限公司 | Power control device with dynamic driving ability regulation function |
| CN105991004A (en) * | 2015-01-30 | 2016-10-05 | 台达电子工业股份有限公司 | Converter system, semiconductor switch driving circuit and semiconductor switch driving method |
| CN106059552A (en) * | 2016-05-27 | 2016-10-26 | 西安电子科技大学 | MOSFET (metal oxide semiconductor field effect transistor) switching dynamic characteristic-based driving circuit |
| CN106099864A (en) * | 2016-07-19 | 2016-11-09 | 东南大学 | The short-circuit protection method of a kind of IGBT device for power switching and circuit thereof |
| CN107517052A (en) * | 2014-07-11 | 2017-12-26 | 吴小再 | For motor control, the Power Control drive circuit of power conversion |
| CN107769529A (en) * | 2017-11-17 | 2018-03-06 | 郑州嘉晨电器有限公司 | The soft powered-down road of power device |
| CN109494969A (en) * | 2018-12-10 | 2019-03-19 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
| CN109599845A (en) * | 2018-11-28 | 2019-04-09 | 海信家电集团股份有限公司 | Protection circuit, upper bridge driving chip and IPM module |
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
| CN109995339A (en) * | 2019-04-10 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | A kind of limiter |
| CN111181360A (en) * | 2020-01-07 | 2020-05-19 | 西安石油大学 | IGBT driving dynamic voltage rise control circuit |
| CN111257716A (en) * | 2020-02-24 | 2020-06-09 | 漳州科华技术有限责任公司 | IGBT over-current detection circuit, chip and electronic equipment |
| CN111697957A (en) * | 2020-06-17 | 2020-09-22 | 上海电气集团股份有限公司 | Drive circuit applied to insulated gate bipolar transistor IGBT |
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
| CN114295950A (en) * | 2021-11-29 | 2022-04-08 | 中车永济电机有限公司 | On-line detection device for collector-emitter saturation voltage drop of IGBT device |
| CN116647219A (en) * | 2023-04-27 | 2023-08-25 | 北京芯可鉴科技有限公司 | IGBT driving circuit, method for driving IGBT and chip |
| CN117872076A (en) * | 2023-12-28 | 2024-04-12 | 哈尔滨工业大学（威海） | Method for detecting defects of unmanned aerial vehicle wireless power transmission circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800277B2 (en) * | 1989-06-26 | 1998-09-21 | 株式会社豊田自動織機製作所 | Semiconductor element drive circuit |
| JP4788028B2 (en) * | 2000-08-28 | 2011-10-05 | 富士電機株式会社 | Bidirectional IGBT with reverse blocking IGBTs connected in antiparallel |
| JP3800115B2 (en) * | 2002-03-25 | 2006-07-26 | 株式会社デンソー | Load drive circuit with overcurrent detection function |
-
2004
- 2004-07-09 CN CNB2004100688412A patent/CN100405738C/en not_active Expired - Fee Related
Cited By (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401307B (en) * | 2006-12-06 | 2011-09-14 | 罗姆股份有限公司 | Drive circuit and semiconductor device using the same |
| CN101816128B (en) * | 2007-10-05 | 2015-09-02 | 爱立信电话股份有限公司 | For the drive circuit of power switch component |
| CN101752841B (en) * | 2008-12-19 | 2012-08-22 | 比亚迪股份有限公司 | Insulated gate bipolar transistor (IGBT) protection circuit and motor control system |
| CN102804605A (en) * | 2009-06-26 | 2012-11-28 | 西门子公司 | Commutation method of an electronic power converter phase with reverse-conducting IGBTs |
| CN102804605B (en) * | 2009-06-26 | 2016-06-08 | 西门子公司 | It is provided with the commutation method of the current transformer of inverse conductivity type IGBT |
| US9263933B2 (en) | 2009-06-26 | 2016-02-16 | Siemens Aktiengesellschaft | Method for commutating a current in an electronic power converter phase from a reverse-conducting IGBT in a diode mode to a reverse-conducting IGBT in an IGBT mode |
| CN101764595A (en) * | 2009-11-23 | 2010-06-30 | 宁波德斯科电子科技有限公司 | IGBT drive and protection circuit |
| CN101882860A (en) * | 2010-06-23 | 2010-11-10 | 山东大学威海分校 | Novel insulated gate bipolar translator (IGBT) drive and protection circuit |
| CN101882860B (en) * | 2010-06-23 | 2013-06-12 | 山东大学威海分校 | Insulated gate bipolar translator (IGBT) drive and protection circuit |
| CN102290795A (en) * | 2011-08-30 | 2011-12-21 | 东莞市精诚电能设备有限公司 | IGBT (insulated gate bipolar translator) driver with good protection effect |
| CN103199827A (en) * | 2013-02-22 | 2013-07-10 | 西安永电电气有限责任公司 | Protective circuit and driving circuit and control method of insulated gate bipolar transistor (IGBT) |
| CN103346763B (en) * | 2013-06-18 | 2016-01-20 | 山东大学（威海） | A kind of igbt Drive Protecting Circuit |
| CN103346763A (en) * | 2013-06-18 | 2013-10-09 | 山东大学（威海） | Insulated gate bipolar transistor drive protective circuit |
| CN104467711A (en) * | 2013-09-24 | 2015-03-25 | 索尼公司 | Amplification circuit |
| CN104467711B (en) * | 2013-09-24 | 2018-08-28 | 索尼公司 | Amplifying circuit |
| CN105226977B (en) * | 2014-05-29 | 2018-02-16 | 维谛技术有限公司 | A kind of control method of inverter, device and uninterrupted power source |
| CN105226977A (en) * | 2014-05-29 | 2016-01-06 | 艾默生网络能源有限公司 | A kind of control method of inverter, device and uninterrupted power supply |
| CN107733210A (en) * | 2014-07-11 | 2018-02-23 | 吴小再 | Motor control, the Power Control drive circuit of power conversion, method of work |
| CN107517051B (en) * | 2014-07-11 | 2020-07-10 | 上海联适导航技术有限公司 | Bridge type power control circuit for motor control and working method thereof |
| CN107517052B (en) * | 2014-07-11 | 2020-06-23 | 佛山市华葆电源设备有限公司 | Power control drive circuit for motor control and power conversion |
| CN107579731B (en) * | 2014-07-11 | 2019-11-22 | 京马电机有限公司 | Power control driving circuit and its working method for motor control |
| CN107517052A (en) * | 2014-07-11 | 2017-12-26 | 吴小再 | For motor control, the Power Control drive circuit of power conversion |
| CN107517051A (en) * | 2014-07-11 | 2017-12-26 | 朱保生 | Bridge power control circuit and its method of work for motor control |
| CN107579731A (en) * | 2014-07-11 | 2018-01-12 | 朱保生 | Power Control drive circuit and its method of work for motor control |
| CN104135213A (en) * | 2014-07-31 | 2014-11-05 | 苏州汇川技术有限公司 | Motor controller with short circuit protection function and motor control system with motor controller |
| CN104378097A (en) * | 2014-09-29 | 2015-02-25 | 株洲变流技术国家工程研究中心有限公司 | Drive system and method of insulated gate bipolar transistor |
| CN104378097B (en) * | 2014-09-29 | 2018-06-12 | 株洲变流技术国家工程研究中心有限公司 | The drive system and method for a kind of insulated gate bipolar transistor |
| CN104300954A (en) * | 2014-09-30 | 2015-01-21 | 苏州天准精密技术有限公司 | Emergency stop circuit, packaging body and emergency stop circuit device based on double MOS transistors |
| CN105656311A (en) * | 2014-11-11 | 2016-06-08 | 产晶积体电路股份有限公司 | Power control device with dynamic driving ability regulation function |
| CN105656311B (en) * | 2014-11-11 | 2018-11-13 | 产晶积体电路股份有限公司 | The power control of dynamic driving capacity adjustment |
| CN104659757A (en) * | 2014-12-25 | 2015-05-27 | 深圳青铜剑电力电子科技有限公司 | IGBT overvoltage protection circuit and IGBT overvoltage protection method |
| CN104659757B (en) * | 2014-12-25 | 2018-02-16 | 深圳青铜剑科技股份有限公司 | A kind of IGBT overvoltage crowbars and a kind of IGBT over-voltage protection methods |
| CN105991004B (en) * | 2015-01-30 | 2019-06-11 | 台达电子工业股份有限公司 | Changer system, semiconductor switch driving circuit and method |
| US10128832B2 (en) | 2015-01-30 | 2018-11-13 | Delta Electronics, Inc. | Converter system, driving circuit and method for semiconductor switch |
| CN105991004A (en) * | 2015-01-30 | 2016-10-05 | 台达电子工业股份有限公司 | Converter system, semiconductor switch driving circuit and semiconductor switch driving method |
| CN105119590A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT high efficient drive circuit |
| CN106059552B (en) * | 2016-05-27 | 2018-11-20 | 西安电子科技大学 | Driving circuit based on switch mosfet dynamic characteristic |
| CN106059552A (en) * | 2016-05-27 | 2016-10-26 | 西安电子科技大学 | MOSFET (metal oxide semiconductor field effect transistor) switching dynamic characteristic-based driving circuit |
| CN106099864A (en) * | 2016-07-19 | 2016-11-09 | 东南大学 | The short-circuit protection method of a kind of IGBT device for power switching and circuit thereof |
| CN107769529A (en) * | 2017-11-17 | 2018-03-06 | 郑州嘉晨电器有限公司 | The soft powered-down road of power device |
| CN109599845A (en) * | 2018-11-28 | 2019-04-09 | 海信家电集团股份有限公司 | Protection circuit, upper bridge driving chip and IPM module |
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
| CN109743054B (en) * | 2018-12-05 | 2024-03-19 | 江苏国传电气有限公司 | SiC MOSFET class II short-circuit current suppression circuit and method |
| CN109494969A (en) * | 2018-12-10 | 2019-03-19 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
| CN109494969B (en) * | 2018-12-10 | 2020-07-10 | 华中科技大学 | Drive circuit of silicon carbide semiconductor field effect transistor |
| CN109995339A (en) * | 2019-04-10 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | A kind of limiter |
| CN111181360A (en) * | 2020-01-07 | 2020-05-19 | 西安石油大学 | IGBT driving dynamic voltage rise control circuit |
| CN111181360B (en) * | 2020-01-07 | 2023-12-05 | 西安石油大学 | IGBT driving dynamic voltage rising control circuit |
| CN111257716A (en) * | 2020-02-24 | 2020-06-09 | 漳州科华技术有限责任公司 | IGBT over-current detection circuit, chip and electronic equipment |
| CN111697957B (en) * | 2020-06-17 | 2024-03-12 | 上海电气集团股份有限公司 | Driving circuit applied to insulated gate bipolar transistor IGBT |
| CN111697957A (en) * | 2020-06-17 | 2020-09-22 | 上海电气集团股份有限公司 | Drive circuit applied to insulated gate bipolar transistor IGBT |
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
| CN114295950A (en) * | 2021-11-29 | 2022-04-08 | 中车永济电机有限公司 | On-line detection device for collector-emitter saturation voltage drop of IGBT device |
| CN114295950B (en) * | 2021-11-29 | 2023-12-19 | 中车永济电机有限公司 | On-line detection device for collector-emitter saturation voltage drop of IGBT device |
| CN116647219A (en) * | 2023-04-27 | 2023-08-25 | 北京芯可鉴科技有限公司 | IGBT driving circuit, method for driving IGBT and chip |
| CN117872076A (en) * | 2023-12-28 | 2024-04-12 | 哈尔滨工业大学（威海） | Method for detecting defects of unmanned aerial vehicle wireless power transmission circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100405738C (en) | 2008-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1588799A (en) | Driving protective circuit for inverse resistance type insulated gate bipolar transistor | |
| CN1260887C (en) | Grid drive circuit | |
| CN110568335B (en) | SiC MOSFET short circuit detection protection system and method without detection blind area | |
| CN1671049A (en) | Drive circuit for voltage driven type semiconductor element | |
| CN205847212U (en) | A kind of IGBT drive circuit of high reliability | |
| CN104040890B (en) | Device for controlling semiconductor switch device | |
| CN103066809B (en) | Improved residual current device (RCD) buffer circuit applied to direct tandem type insulated gate bipolar translator (IGBT) | |
| CN105186847A (en) | IGBT active clamping protection circuit | |
| CN1217487C (en) | Power module | |
| CN104659757A (en) | IGBT overvoltage protection circuit and IGBT overvoltage protection method | |
| CN109980905A (en) | Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe | |
| CN210724183U (en) | IGBT overcurrent and short circuit protection circuit | |
| CN115173676B (en) | SiC MOSFET driving circuit for inhibiting overshoot peak | |
| CN109743054A (en) | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method | |
| CN204633582U (en) | Intelligent digitalized high-power IGBT drive unit | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN109004813A (en) | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike | |
| CN102185286A (en) | High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit | |
| CN108134514B (en) | Discharge protection circuit of power MOS tube in inverter circuit | |
| CN203933357U (en) | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment | |
| US20160315605A1 (en) | Dynamic shutdown protection circuit | |
| CN202840920U (en) | IGBT (insulated gate bipolar transistor) drive circuit | |
| CN112290920B (en) | Driving system and method for dynamically adjusting gate voltage | |
| CN116436453B (en) | Multi-level power device grid driver with miller clamping function | |
| CN205004946U (en) | IGBT active clamping protection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080723 Termination date: 20110709 |