CN107733210A - Motor control, the Power Control drive circuit of power conversion, method of work - Google Patents
Motor control, the Power Control drive circuit of power conversion, method of work Download PDFInfo
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- CN107733210A CN107733210A CN201711073590.0A CN201711073590A CN107733210A CN 107733210 A CN107733210 A CN 107733210A CN 201711073590 A CN201711073590 A CN 201711073590A CN 107733210 A CN107733210 A CN 107733210A
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- mosfet
- grid
- drive circuit
- power control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electrostatic Charge, Transfer And Separation In Electrography (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The present invention relates to motor control, the Power Control drive circuit of power conversion, method of work；It includes：Drive circuit prime, pwm signal or logical signal for being sent into according to outside control the output voltage of its voltage output end；N MOSFET, its grid connect the voltage output end of drive circuit prime；First resistor is provided between the grid and source electrode of the N MOSFET, N MOSFET drain electrode connects driving power；P MOSFET, its grid connect the voltage output end of drive integrated circult；Second resistance is provided between N MOSFET source electrode and P MOSFET source electrode；Controlled power control device, its grid concatenation 3rd resistor are followed by P MOSFET source electrode, and the source electrode of controlled power control device connects P MOSFET drain electrode.
Description
Technical field
The present invention relates to a kind of Power Control drive circuit, the especially power control device of power control apparatus
The drive circuit of (MOSFET and IGBT etc.).The drive circuit can with output amplitude larger, rising edge and the shorter peak of trailing edge
It is worth electric current.The drive circuit can be applied to carry out motor control, power conversion and power management constant power using MOSFET, IGBT
Control field.
Background technology
In the prior art, when opening the controlled power control devices such as MOSFET or IGBT, drive circuit is required can be short
High current is injected to controlled power control device MOSFET or IGBT grid in time, closes controlled power control device
During MOSFET or IGBT, drive circuit be able to must be drawn by the grid for being controlled power control device MOSFET or IGBT in a short time
Go out high current.In other words, the drive current amplitude for being added to controlled power control device MOSFET or IGBT grid will foot
Enough big, rising time and trailing edge time are short enough.Therefore, the drive of controlled power control device is typically constructed with MOSFET
Streaming current output par, c, conventional circuit（Drive circuit prime including special MOSFET or IGBT）Such as Fig. 1（A）Extremely（D）.
In Fig. 1, Q1, Q2 are the controlled power control device MOSFET or IGBT of driving（That is Q3）MOSFET.R is driving electricity
Resistance, to adjust driving current and damping driving circuit ring.Pin 3 connects driving power.The current potential for remembering pin 3 is V3；Pin 1 and 2 points
It is not the control signal for driving Q1, Q2.The current potential for remembering pin 1 is V1, and the current potential of note pin 2 is V2；In bridge circuit, it is used in Q3
During upper bridge, 4 are being connected to the power supply of power stage just, and 5 be output.When Q3 is used for lower bridge, 5 power supplys for being connected to power stage are born, and 4 be defeated
Go out.The current potential for remembering pin 4 is V4, and the current potential of pin 5 is V5.The voltage of Q3 grid is designated as VG3 (namely current potentials of grid and source electrode
Difference), to make Q3 depth saturations（MOSFET enters resistance area, and conducting resistance is sufficiently small）, it is necessary to there is VG3=5V-15V, together
Sample, Q1 grid voltage are designated as VG1, to make Q1 depth saturations（MOSFET enters resistance area, and conducting resistance is sufficiently small）, must
There must be VG1=5V-15V, therefore, accompanying drawing 1（A）N-NMOSFET is combined and Fig. 1（D）N-PMOSFET is combined, and opens Q1 control letter
Number amplitude must reach VG1+VG=20V-30V.Obvious processing of circuit is more complicated, so both circuits are rarely employed.
Combined for Fig. 1 (B) P-NMOSFET, as V1=V5, Q1 conductings, open Q3, Q2 is turned on as V2=V5, is closed
Q3.To prevent Q1, Q2 from simultaneously turning on, there must be V2=V3 as V1=V5, there must be V1=V3 as V2=V5, and in Q1, Q2
Switch transfer process in, it is necessary to assure first close and open afterwards, suitable time interval is inserted between Guan Yukai, this time interval
Also it is dead zone protection.
Combined for Fig. 1 (C) P-PMOSFET, as V1=V5, Q1 conductings, open Q3, Q2 is turned on as V2=V3, is closed
Q3.To prevent Q1, Q2 from simultaneously turning on, there must be V2=V5 as V1=V5, there must be V1=V3 as V2=V3, and in Q1, Q2
Switch transfer process in, it is necessary to assure first close and open afterwards, suitable time interval is inserted between Guan Yukai, this time interval
Also it is dead zone protection.
The control signal process circuit ratio of Fig. 1 (B) P-NMOSFET combinations and Fig. 1 (C) P-PMOSFET combinations as can be seen here
It is more complicated, it is being especially in the dead zone protection time, controlled power control device Q3 working condition is undesirable.
The content of the invention
The first technical problems to be solved of the present invention are to provide that one kind can larger, rising edge and trailing edge be shorter with output amplitude
Peak point current（I.e. controlled power control device to turn on and off the time shorter）Power Control drive circuit.
In order to solve the above-mentioned technical problem, the invention provides a kind of Power Control drive circuit, it includes：Driving electricity
Road prime, pwm signal or logical signal for being sent into according to outside control the output voltage of its voltage output end；N-MOSFET
（Q1）, its grid（G）Connect the voltage output end of the drive circuit prime；The N-MOSFET（Q1）Grid（G）With source electrode（S）
Between be provided with first resistor（R1）,N-MOSFET（Q1）Drain electrode（D）Connect driving power；P-MOSFET（Q2）, its grid（G）Connect
The voltage output end of the drive circuit prime；The N-MOSFET（Q1）Source electrode（S）With P-MOSFET（Q2）Source electrode（S）
Between be provided with second resistance（R2）；Controlled power control device（Q3）, its grid（G）Concatenate 3rd resistor（R3）It is followed by the P-
MOSFET（Q2）Source electrode（S）, the controlled power control device（Q3）Source electrode（S）Meet the P-MOSFET（Q2）Drain electrode
（D）.
The drive circuit prime is using drive integrated circult or divides row device to form.
As a kind of preferable scheme, the first resistor（R1）Resistance be less than 1K Ω, second resistance（R2）With the 3rd
Resistance（R3）Resistance be less than 100 Ω.
As a kind of preferable scheme, the voltage that the voltage output end of the drive circuit prime can export is 10-15V,
And the peak value of output current and absorption electric current is not less than 200mA.
As a kind of preferable scheme, the controlled power control device（Q3）For MOSFET or IGBT.
The method of work of above-mentioned Power Control drive circuit, it includes：
When the pwm signal or effective logical signal, the output voltage VO UT of the voltage output end of the drive circuit prime=
10-15V, the voltage is through first, second, and third resistance（R1、R2、R3）It is added to controlled power control device（Q3）Grid, and
Form electric current output current（I1）；The voltage is also applied directly to N-MOSFET（Q1）Grid, make N-MOSFET（Q1）Conducting is simultaneously
Depth saturation quickly, and then make controlled power control device（Q3）Grid voltage rise quickly；With controlled power controller
Part（Q3）Grid voltage rise, the output current（I1）It is gradually reduced, until the first resistor（R1）The voltage at both ends
Less than the N-MOSFET（Q1）Threshold voltage when, N-MOSFET（Q1）Conducting is exited, is controlled power control device（Q3）'s
Grid voltage is kept by the drive circuit prime, maintains controlled power control device（Q3）It is in depth saturation region；When PWM believes
Number or logical signal from when being effectively changed into invalid, the voltage output end declines, and makes controlled power control device（Q3）Grid
Through first, second, and third resistance（R1、R2、R3）Sink current is exported to the voltage output end of the drive circuit prime（I2）,
And in first, second resistance（R1,R2）Resistance sum with output sink current（I2）Product be more than P-MOSFET（Q2）Door
During sill voltage, make P-MOSFET（Q2）Saturation conduction quickly, and make controlled power control device（Q3）Grid voltage quickly under
Drop, finally makes Q2 exit conducting；Controlled power control device（Q3）Grid voltage kept by drive circuit prime, due to driving
Circuit prime energy absorption peak is not less than 200mA electric current, therefore can reliably maintain controlled power control device（Q3）It is in and cuts
Only area.
As a kind of scheme of modification, the voltage output end of the drive circuit prime is sequentially connected in series the 4th resistance（R4）、
5th resistance（R5）With first grid resistance（RG1）It is followed by N-MOSFET（Q1）Grid（G）；5th resistance（R5）With
One resistance（RG1）Contact concatenate the first resistor（R1）It is followed by N-MOSFET（Q1）Source electrode（S）；4th resistance
（R4）With the 5th resistance（R5）Contact concatenation second grid resistance（RG2）It is followed by P-MOSFET（Q2）Grid（G）.
As the scheme of another modification, the voltage output end of the drive circuit prime is sequentially connected in series the 4th resistance
（R4）, the 5th resistance（R5）With second grid resistance（RG2）It is followed by P-MOSFET（Q2）Grid（G）；4th resistance
（R4）With the 5th resistance（R5）Contact concatenation first grid resistance（RG1）It is followed by N-MOSFET（Q1）Grid（G）；Described
Five resistance（R5）With second grid resistance（RG2）Contact concatenation first resistor（R1）It is followed by N-MOSFET（Q1）Source electrode（S）.
A kind of bridge power control circuit, it includes：Drive circuit prime, a pair of PWM for being sent into according to outside believe
Number or logical signal control the output voltage of its a pair of voltage output ends respectively；This is connected to structure phase to voltage output end
Same upper and lower bridge drive circuit；The upper and lower bridge drive circuit includes：N-MOSFET（Q1）, its grid connects the drive circuit
One voltage output end of prime；The N-MOSFET（Q1）Grid（G）With former pole（S）Between be provided with first resistor（R1）,N-
MOSFET（Q1）Drain electrode（D）Connect driving power；P-MOSFET（Q2）, its grid（G）Connect the voltage of the drive circuit prime
Output end；N-MOSFET（Q1）Former pole（S）With P-MOSFET（Q2）Former pole（S）Between be provided with second resistance（R2）；It is controlled
Power control device（Q3）, its grid（G）Concatenate 3rd resistor（R3）It is followed by the P-MOSFET（Q2）Former pole（S）, it is described
Controlled power control device（Q3）Former pole（S）Meet the P-MOSFET（Q2）Drain electrode（D）；It is controlled in upper bridge drive circuit
The former pole of power control device（S）Connect the drain electrode of the controlled power control device in lower bridge drive circuit（D）, lower bridge drive circuit
In controlled power control device former pole（S）Connect the common port of drive circuit prime（COM）.
Relative to prior art, what the present invention had has the technical effect that：（1）Power Control driving electricity in the present invention
Road, in stable state（Refer to controlled power control device Q3 reliable saturation conduction or the cut-offs of output stage）, drive N-MOSFET（Q1）
And P-MOSFET（Q2）Have been switched off.And available circuit is when PWM or logical signal effectively neutralize or invalid change is effective, close
That close is the controlled power control device Q3 for being also in saturation state, it is clear that its turn-off time and shut-off delay will be more than this hair
It is bright.（2）Present invention driving N-MOSFET（Q1）And P-MOSFET（Q2）Control signal need not insert the dead zone protection time.
（3）The driving N-MOSFET of the present invention（Q1）And P-MOSFET（Q2）Only in State Transferring（Open or close the controlled work(of output stage
Rate control device Q3）When work, can be larger with output amplitude, rising edge and the shorter peak point current of trailing edge.（4）Can be changed
Two resistance R2 and 3rd resistor R3 resistance, the controlled power control device Q3 for adjusting output stage turn on and off the time.（5）
Universal driving circuit can be used to form controlled power control device Q3 drive circuit prime（Such as IRS2003, IRS2103,
IRS2117, IRS2118, IRS2175 etc.）, can also be with dividing row device to form the drive circuit prime.
Brief description of the drawings
Innovative principle for the clear explanation present invention and its technical advantage compared to existing product, below by way of attached
Figure illustrates possible embodiment by the non-limiting examples of the application principle.In figure：
Fig. 1（A）Combined for N-NMOSFET of the prior art；
Fig. 1（B）Combined for P-PMOSFET of the prior art；
Fig. 1（C）Combined for P-NMOSFET of the prior art；
Fig. 1（D）Combined for N-PMOSFET of the prior art；
Fig. 2 is the circuit theory diagrams of the Power Control drive circuit of the present invention；
Fig. 3 is the circuit theory diagrams of second of Power Control drive circuit of the present invention；
Fig. 4 is the circuit theory diagrams of the third Power Control drive circuit of the present invention；
Fig. 5 is the typical application circuit figure that the drive circuit prime is formed using drive integrated circult IRF2003 (S) PbF；Its
In, Q13 and Q23 are respectively first, second controlled power control device；
Fig. 6 is the typical circuit figure for the drive circuit prime for dividing row device to form that prior art uses；Wherein, Q16 and Q26 points
Wei not the three, the 4th controlled power control devices；For the circuit as drive circuit prime, it is longer that it turns on and off the time, drives
Streaming current is not big enough；Obviously cannot be used in high-power control device；
Fig. 7 is the typical application circuit using drive integrated circult IRF2003 (S) PbF, and applied to the Power Control of the present invention
With the circuit diagram after drive circuit.Wherein, Q13 and Q23 is respectively first, second controlled power control device；
Fig. 8 is to use to divide row device structure（Non-integrated circuit device, or meaning conventional device）The drive circuit prime of composition, and apply
Circuit diagram after the Power Control drive circuit of the present invention；Wherein, Q16 and Q26 is respectively the three, the 4th controlled power controls
Device processed.
Embodiment
Embodiment 1
Such as Fig. 2, the Power Control of the present embodiment is included with drive circuit：Before the drive circuit be made up of drive integrated circult U1
Level, the pwm signal (or logical signal) for being sent into according to outside control its voltage output end OUT output voltage；N-
MOSFET（Q1）, its grid G meets the voltage output end OUT of the drive integrated circult；The N-MOSFET（Q1）Grid G with it is former
First resistor R1, N-MOSFET are provided between the S of pole（Q1）Drain D connect driving power；P-MOSFET（Q2）, its grid G meets institute
State the voltage output end OUT of drive integrated circult；The N-MOSFET（Q1）Source S and P-MOSFET（Q2）Source S it
Between be provided with second resistance R2；Controlled power control device Q3, its grid G concatenation 3rd resistor R3 are followed by the P-MOSFET（Q2）
Source S, the source S of the controlled power control device Q3 meets the P-MOSFET（Q2）Drain D.
The controlled power control device Q3 is MOSFET or IGBT.The drive integrated circult U1 is that international rectifier is public
Take charge of MOSFET drive integrated circults IRS2003 (S) PbF of (InternationalRectifier).Its voltage output end OUT energy
The voltage of output is 10-15V, and the peak value of output current and absorption electric current is not less than 200mA.
The resistance that the resistance of the first resistor R1 is 500 Ω -1K Ω, second resistance R2 is 10-50 Ω, 3rd resistor R3
Resistance be less than 10 Ω.When it is implemented, output stage can be adjusted by changing second resistance R2 and 3rd resistor R3 resistance
Controlled power control device Q3's turns on and off the time.
When the pwm signal (or logical signal) is effective, the voltage output end OUT of drive integrated circult output
Voltage VOUT=10-15V, the voltage are added to controlled power control device through first resistor R1, second resistance R2 and 3rd resistor R3
Q3 grid, and form electric current output current I1；The voltage is also applied directly to N-MOSFET（Q1）Grid, make N-MOSFET
（Q1）Conducting and quickly depth saturation, and then controlled power control device Q3 grid voltage is increased quickly；With controlled work(
Rate control device Q3 grid voltage rises, and the output current I1 is gradually reduced, until the electricity at the first resistor R1 both ends
Pressure is less than the N-MOSFET（Q1）Threshold voltage when, N-MOSFET（Q1）Conducting is exited, is controlled power control device Q3's
Grid voltage is kept by the drive integrated circult, maintains controlled power control device Q3 to be in depth saturation region；
When pwm signal (or logical signal) is from when being effectively changed into invalid, the voltage output end OUT declines, and makes controlled power control
Voltage output of the device Q3 processed grid through first resistor R1, second resistance R2 and 3rd resistor R3 to the drive integrated circult
OUT output sink current I2 are held, and are more than in first resistor R1, second resistance R2 resistance sum with exporting sink current I2 product
P-MOSFET（Q2）Threshold voltage when, make P-MOSFET（Q2）Saturation conduction quickly, and make controlled power control device Q3's
Grid voltage declines quickly, finally makes P-MOSFET（Q2）Exit conducting；
Controlled power control device Q3 grid voltage is kept by drive integrated circult, due to drive integrated circult energy absorption peak
Electric current not less than 200mA, therefore can reliably maintain controlled power control device Q3 to be in cut-off region.
Embodiment 2
On the basis of embodiment 1, there is following modification in the Power Control drive circuit of the present embodiment：
As Fig. 3, the voltage output end OUT of the drive integrated circult are sequentially connected in series the 4th resistance R4, the 5th resistance R5 and first
Resistance RG1 is followed by N-MOSFET（Q1）Grid G；The contact concatenation of the 5th resistance R5 and first grid resistance RG1
The first resistor R1 is followed by N-MOSFET（Q1）Former pole S；4th resistance R4 and the 5th resistance R5 contact concatenation second gate
Electrode resistance RG2 is followed by P-MOSFET（Q2）Grid G.
Pin 3 is connected to driving power.When controlled power control device Q3 is used for upper bridge, pin 4 is being connected to the power supply of power stage just,
Pin 5 is output.When controlled power control device Q3 is used for lower bridge, the power supply that pin 5 is connected to power stage is born, and pin 4 is output.
In addition, Fig. 4 Power Control is with a kind of modification that drive circuit is embodiment 2.
Application examples 1
Power Control drive circuit described in Application Example 1, form a bridge power control circuit.Such as Fig. 7, the bridge-type
Power control circuit includes：Drive integrated circult U1, for a pair of pwm signals (or logical signal) HIN being sent into according to outside
Control its a pair of voltage output ends HO and LO output voltage respectively with LIN；This is connected to voltage output end HO and LO
The upper and lower bridge drive circuit of structure identical.
The upper bridge drive circuit includes：N-MOSFET（Q11）, its grid connects the first voltage of the drive integrated circult
Output end HO；The N-MOSFET（Q11）Grid G and former pole S between be provided with first resistor R11, drive integrated circult U1 electricity
Source VCC meets N-MOSFET through diode D11（Q11）Drain D；P-MOSFET（Q12）Grid G connect the drive integrated circult
Second voltage output end LO；N-MOSFET（Q11）Former pole S and P-MOSFET（Q12）Former pole S between be provided with resistance R12；
Controlled power control device Q13, its grid G series resistor R13 are followed by the P-MOSFET（Q12）Former pole S, the controlled work(
Rate control device Q13 former pole S meets the P-MOSFET（Q12）Drain D；Controlled power controller in upper bridge drive circuit
The former pole S of part connects the drain D of the controlled power control device in lower bridge drive circuit, the controlled power control in lower bridge drive circuit
The former pole S of device processed meets drive integrated circult U1 common port COM.
U1 is the MOSFET drive integrated circults IRS2003 of Int Rectifier Corp (InternationalRectifier)
(S)PbF.The output of controlled power control device Q13 and Q23 composition bridge power control circuit in upper and lower bridge drive circuit
Level.
The N-MOSFET（Q11）Conducting resistance be designated as RDS (ON) Q11, N-MOSFET（Q21）Conducting resistance be designated as
RDS(ON)Q21.The P-MOSFET（Q12）Conducting resistance be designated as RDS (ON) Q12, P-MOSFET（Q22）Conducting resistance
It is designated as RDS (ON) Q22.
(R12+R13+RDS(ON)Q11)=6Ω,(R22+R23+RDS(ON)Q21)=6Ω,
(R13+RDS(ON)Q12)=1Ω,(R23+RDS(ON)Q22)=1Ω。
As VCC=12V, controlled power control device Q3 is opened（By using exemplified by MOSFET）When, the circuit energy after improvement
The maximum current injected to controlled power control device Q3 grids reaches 2A, when closing controlled power control device Q3, after improvement
Circuit can by be controlled power control device Q3 grids absorb maximum current reach 12A.
Circuit after being improved using the present invention is had been supplied in peak power output 10KW electric machine controller.
Fig. 5 is the typical application circuit of MOSFET drive integrated circults IRS2003 (S) PbF, wherein, open
During MOSFET, IRS2003 (S) PbF are to MOSFET（Corresponding to the controlled power control device Q3 of the present embodiment）Grid injection
Maximum current be 130mA, close MOSFET when, the maximum current that IRS2003 (S) PbF are absorbed by MOSFET grids is
270mA.Obviously cannot be used in high-power control device.
Embodiment 3
On the basis of embodiment 1, the drive circuit prime of the present embodiment divides row device to form using shown in Fig. 8, is specifically
Using the drive circuit prime for dividing row device composition on the dotted line left side in Fig. 8.
In Fig. 8,1,5 pin is connected to driving power, generally 12V ~ 15V.
2 pin input for upper bridge control signal PWM (or logical signal).
7 pin input for lower bridge control signal PWM (or logical signal).
6 pin are connected to logic power positive pole, generally 3.3V or 5V.
8 pin are connected to power power-supply positive pole.
10 pin are connected to power power-supply negative pole.
9 pin are power output.
D11 and C11 forms bootstrap circuit boost, there is provided upper bridge driving power.
Divide the MOSFET or IGBT of row device composition drive circuit prime, or use the special integrated electricity of MOSFET and IGBT
Road is as drive circuit prime, and after being improved using the present invention, driving current is sufficiently large, and it is shorter to turn on and off the time, and drives
Streaming current amplitude can be adjusted conveniently with the turn-off time is opened.To application MOSFET and IGBT power control apparatus, performance is improved
There is positive role with reliability is improved.
Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and is not to the present invention
The restriction of embodiment.For those of ordinary skill in the field, it can also be made on the basis of the above description
Its various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.And these belong to this hair
Among the obvious changes or variations that bright spirit is extended out is still in protection scope of the present invention.
Claims (1)
1. a kind of method of work of Power Control drive circuit, it is characterised in that the drive circuit includes：
Drive circuit prime, pwm signal or logical signal for being sent into according to outside control the output electricity of its voltage output end
Pressure；
N-MOSFET（Q1）, its grid（G）Connect the voltage output end of the drive circuit prime；The N-MOSFET（Q1）Grid
（G）With source electrode（S）Between be provided with first resistor（R1）,N-MOSFET（Q1）Drain electrode（D）Connect driving power；
P-MOSFET（Q2）, its grid（G）Connect the voltage output end of the drive circuit prime；The N-MOSFET（Q1）Source
Pole（S）With P-MOSFET（Q2）Source electrode（S）Between be provided with second resistance（R2）；
Controlled power control device（Q3）, its grid（G）Concatenate 3rd resistor（R3）It is followed by the P-MOSFET（Q2）Source electrode
（S）, the controlled power control device（Q3）Source electrode（S）Meet the P-MOSFET（Q2）Drain electrode（D）；
The voltage that the voltage output end of the drive circuit prime can export is 5V-15V, and output current and the peak for absorbing electric current
Value is not less than 50mA；
The voltage output end of the drive circuit prime is sequentially connected in series the 4th resistance（R4）, the 5th resistance（R5）With second grid electricity
Resistance（RG2）It is followed by P-MOSFET（Q2）Grid（G）；
4th resistance（R4）With the 5th resistance（R5）Contact concatenation first grid resistance（RG1）It is followed by N-MOSFET（Q1）
Grid（G）；
5th resistance（R5）With second grid resistance（RG2）Contact concatenation first resistor（R1）It is followed by N-MOSFET（Q1）
Source original pole（S）；
Described method of work, including：
When the pwm signal or effective logical signal, the output voltage VO UT of the voltage output end of the drive circuit prime=
5V-15V, the voltage is through first, second, and third resistance（R1、R2、R3）It is added to controlled power control device（Q3）Grid, and
Form electric current output current（I1）；The voltage is also applied directly to N-MOSFET（Q1）Grid, make N-MOSFET（Q1）Conducting is simultaneously
Depth saturation quickly, and then make controlled power control device（Q3）Grid voltage rise quickly；With controlled power controller
Part（Q3）Grid voltage rise, the output current（I1）It is gradually reduced, until the first resistor（R1）The voltage at both ends
Less than the N-MOSFET（Q1）Threshold voltage when, N-MOSFET（Q1）Conducting is exited, is controlled power control device（Q3）'s
Grid voltage is kept by the drive circuit prime, maintains controlled power control device（Q3）It is in depth saturation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711073590.0A CN107733210B (en) | 2014-07-11 | 2014-07-11 | Motor control, the power control driving circuit of power conversion, working method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410331421.2A CN105099420B (en) | 2014-07-11 | 2014-07-11 | Power Control drive circuit |
| CN201711073590.0A CN107733210B (en) | 2014-07-11 | 2014-07-11 | Motor control, the power control driving circuit of power conversion, working method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410331421.2A Division CN105099420B (en) | 2014-07-11 | 2014-07-11 | Power Control drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107733210A true CN107733210A (en) | 2018-02-23 |
| CN107733210B CN107733210B (en) | 2019-09-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410331421.2A Expired - Fee Related CN105099420B (en) | 2014-07-11 | 2014-07-11 | Power Control drive circuit |
| CN201710783448.9A Active CN107579731B (en) | 2014-07-11 | 2014-07-11 | Power control driving circuit and its working method for motor control |
| CN201710783459.7A Active CN107517051B (en) | 2014-07-11 | 2014-07-11 | Bridge type power control circuit for motor control and working method thereof |
| CN201711073590.0A Active CN107733210B (en) | 2014-07-11 | 2014-07-11 | Motor control, the power control driving circuit of power conversion, working method |
| CN201710783471.8A Active CN107517052B (en) | 2014-07-11 | 2014-07-11 | Power control drive circuit for motor control and power conversion |
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| CN201410331421.2A Expired - Fee Related CN105099420B (en) | 2014-07-11 | 2014-07-11 | Power Control drive circuit |
| CN201710783448.9A Active CN107579731B (en) | 2014-07-11 | 2014-07-11 | Power control driving circuit and its working method for motor control |
| CN201710783459.7A Active CN107517051B (en) | 2014-07-11 | 2014-07-11 | Bridge type power control circuit for motor control and working method thereof |
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| CN201710783471.8A Active CN107517052B (en) | 2014-07-11 | 2014-07-11 | Power control drive circuit for motor control and power conversion |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110661404A (en) * | 2019-09-30 | 2020-01-07 | 北京机械设备研究所 | IGBT single power supply driving circuit based on bootstrap mode |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10090792B2 (en) * | 2016-12-08 | 2018-10-02 | Ford Global Technologies, Llc | Self-balancing parallel power devices with a temperature compensated gate driver |
| CN108831880B (en) * | 2018-08-07 | 2024-06-28 | 成都赛力康电气有限公司 | DBC substrate for MOS module of power electronic device |
| CN111404526B (en) * | 2020-03-19 | 2021-12-03 | 华中科技大学 | Programmable high-precision dynamic GaN driving circuit and application thereof |
| CN113659972B (en) * | 2021-09-13 | 2024-01-05 | 复旦大学 | Driving circuit and electronic device |
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| CN1588799A (en) * | 2004-07-09 | 2005-03-02 | 清华大学 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
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| CN2255696Y (en) * | 1995-02-15 | 1997-06-04 | 陈亚宁 | Driving circuit for simple high-efficiency isolation-type insulated gate high-power device |
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| CN103414333B (en) * | 2013-07-05 | 2015-10-21 | 电子科技大学 | A kind of active power factor correction controller |
| CN103795385A (en) * | 2014-02-24 | 2014-05-14 | 南京航空航天大学 | Power tube drive method and circuit, and direct-current solid power controller |
| CN204068909U (en) * | 2014-07-11 | 2014-12-31 | 唐险峰 | Power control drive circuit |
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- 2014-07-11 CN CN201410331421.2A patent/CN105099420B/en not_active Expired - Fee Related
- 2014-07-11 CN CN201710783448.9A patent/CN107579731B/en active Active
- 2014-07-11 CN CN201710783459.7A patent/CN107517051B/en active Active
- 2014-07-11 CN CN201711073590.0A patent/CN107733210B/en active Active
- 2014-07-11 CN CN201710783471.8A patent/CN107517052B/en active Active
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| JPH0292017A (en) * | 1988-09-28 | 1990-03-30 | Nec Corp | Output circuit |
| US5949273A (en) * | 1996-07-12 | 1999-09-07 | Semikron Elektronik Gmbh | Short circuit protection for parallel connected devices |
| CN1588799A (en) * | 2004-07-09 | 2005-03-02 | 清华大学 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
| CN101355352A (en) * | 2007-07-26 | 2009-01-28 | 上海空间电源研究所 | Driver circuit for P type power MOS switch tube |
| CN102412711A (en) * | 2011-11-22 | 2012-04-11 | 常熟市董浜镇华进电器厂 | High-speed driving circuit of power MOS tube |
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| CN110661404A (en) * | 2019-09-30 | 2020-01-07 | 北京机械设备研究所 | IGBT single power supply driving circuit based on bootstrap mode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107517051A (en) | 2017-12-26 |
| CN107517051B (en) | 2020-07-10 |
| CN107579731B (en) | 2019-11-22 |
| CN107517052A (en) | 2017-12-26 |
| CN107579731A (en) | 2018-01-12 |
| CN107733210B (en) | 2019-09-06 |
| CN105099420A (en) | 2015-11-25 |
| CN105099420B (en) | 2017-12-15 |
| CN107517052B (en) | 2020-06-23 |
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