CN1477678A - Induction coupling plasma processing device - Google Patents
Induction coupling plasma processing device Download PDFInfo
- Publication number
- CN1477678A CN1477678A CNA031460755A CN03146075A CN1477678A CN 1477678 A CN1477678 A CN 1477678A CN A031460755 A CNA031460755 A CN A031460755A CN 03146075 A CN03146075 A CN 03146075A CN 1477678 A CN1477678 A CN 1477678A
- Authority
- CN
- China
- Prior art keywords
- antenna
- high frequency
- chamber
- process chamber
- dielectric walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
This inductively coupled plasma processing apparatus comprises the treatment chamber in which plasma processing is performed on a substrate, a process gas supply system which supplies process gas into the processing chamber, and an exhaust system, which exhausts the gas in the chamber. This device also comprises the dielectric wall, constituting the top wall of the treatment chamber, a high-frequency antenna provided above the wall, and the antenna chamber which is provided above the treatment chamber and houses the antenna and the bottom wall of which is formed of the dielectric wall and vertical walls, which divide the antenna chamber into a plurality of small chambers and supported by the sidewalls of the chamber. The dielectric wall is split into a plurality of pieces, corresponding to the small chambers, and each split piece of the wall is supported by the sidewalls of the antenna chamber and vertical walls.
Description
Technical field
The present invention relates to the processed substrate of liquid crystal display device (LCD) substrate etc. be imposed the inductive couple plasma processing device of the plasma treatment of dry ecthing etc. by inductively coupled plasma.
Background technology
For example at the LCD process for making, to the many plasma treatment of LCD glass substrate with etching or sputter, CVD (chemical vapour deposition (CVD)) etc. as processed substrate.
As the plasma processing apparatus that is used to carry out this class plasma treatment, using has various devices, yet wherein, known have inductively coupled plasma (ICP) processing unit can produce high-density plasma.
Inductive couple plasma processing device, typically, the courtyard of process chamber that is used to carry out to remain the plasma treatment of vacuum is made of dielectric walls, disposes high frequency (RF) antenna on it.And, by in process chamber, forming induction field to this high frequency antenna supply high frequency electric power, make the processing gaseous plasmaization that imports in the process chamber by this induction field, the plasma of the processing gas by such formation imposes the plasma treatment of etching etc.
, at the LCD process for making,,, form and obtain the many pieces of such sizes of LCD display control board goods from wherein getting 1 piece to LCD glass substrate as processed substrate.And when near, from the viewpoint of boosting productivity, the requirement that the LCD glass substrate maximizes is strong, requires it to surpass the such huge substrate of 1m on one side, because corresponding processing means maximizes therewith, dielectric walls also has to maximize.If dielectric walls so maximizes, then keep enough big intensity for pressure differential or the deadweight that only tolerates inside and outside the process chamber, be necessary to increase its thickness, if yet increase dielectric walls thickness, then because big between high frequency antenna and the plasma zone apart from change, efficiency descends, and plasma density reduces.In addition, if increase the thickness of dielectric walls like this, dielectric walls then cost is high.
As the technology of avoiding this class item, propose to open the technology that illustrates for 2001-28299 number the spy.This technology utilizes separation structure that the main body container of inductive couple plasma processing device is divided into the antenna chamber of upside and the process chamber of downside, separation structure is the structure that comprises dielectric walls, adopt following structure: utilize criss-cross support beam to support this dielectric walls, simultaneously, utilization is fixed on the aboveground suspension arrangement in antenna chamber sky with this support beam suspention.In view of the above, owing to significantly reduced the weighing load that is added on the dielectric walls, so can make the dielectric walls attenuate.
The task that invention should solve
; open disclosed technology 2001-28299 number above-mentioned spy; owing to be to support dielectric walls by support beam; structure by suspension arrangement suspention support beam; so be necessary the width of broadening support beam, so that as the support beam of separation structure part warpage not, yet if the width of broadening support beam; the then effective area stenosis of dielectric walls, efficiency has reduced.
Summary of the invention
The present invention finishes in view of this class item, its objective is to provide and do not increase dielectric walls support part, and do not thicken dielectric walls, can suppress to comprise inductive couple plasma processing device dielectric walls, that separate the warpage of the separation structure between process chamber and the antenna chamber.
The means that are used to the task that solves
In order to solve above-mentioned task, the invention provides a kind of inductive couple plasma processing device, it is characterized by, comprise: remain airtight, processed substrate is imposed the process chamber of plasma treatment, in aforementioned process chamber, supply with the treating-gas supply system of handling gas, carry out exhaust to aforementioned processing is indoor, make the indoor gas extraction system that is in decompression state of aforementioned processing, constitute the dielectric walls of aforementioned processing chamber upper wall portion, be arranged on aforementioned electric dielectric wall top, be used for by supply high frequency electric power at the high frequency antenna of the indoor formation induction field of aforementioned processing, be arranged on aforementioned processing chamber top, form diapire by the aforementioned electric dielectric wall, accommodate the antenna chamber of aforementioned high frequency antenna, aforementioned antenna chamber is divided into a plurality of cells, the vertical wall of supporting by the sidewall of aforementioned antenna chamber; Aforementioned electric dielectric wall and each cutting plate of being divided into multi-disc, aforementioned electric dielectric wall corresponding with aforementioned a plurality of cells is by aforementioned antenna chamber sidewall and aforementioned vertical wall support.
According to the present invention, owing to utilize the vertical wall supported by the antenna chamber sidewall to be separated into a plurality of cells by the antenna chamber that dielectric walls forms diapire, corresponding with a plurality of cells and dielectric walls is divided into multi-disc, each cutting plate of dielectric walls is by aforementioned antenna chamber sidewall and aforementioned vertical wall support, support that important document is vertical wall, so can not widen the support part of dielectric walls, and do not thicken dielectric walls, can prevent comprising warpage dielectric walls, that separate the separation structure between process chamber and the antenna chamber.
In the present invention, aforementioned high frequency antenna is made structure with a plurality of antenna sheet of in aforementioned a plurality of cells, accommodating separately, also can be from a high frequency electric source to aforementioned high frequency antenna supply high frequency electric power, also can be corresponding with aforementioned a plurality of cells, have a plurality of aforementioned high frequency antennas, have a plurality of high frequency electric sources to these a plurality of high frequency antennas difference supply high frequency electric power.
As typical case, can enumerate aforementioned vertical wall and separate aforementioned antenna chamber with cross, be divided into 4 cells.
Description of drawings
Fig. 1 is the vertical cross-section diagram that the inductively coupled plasma Etaching device of an embodiment of the present invention is shown.
Fig. 2 is the horizontal sectional view of antenna chamber that the inductively coupled plasma Etaching device of Fig. 1 is shown.
Fig. 3 is the stereogram of vertical wall that the inductively coupled plasma Etaching device of Fig. 1 is shown.
Fig. 4 is the approximate three-dimensional map that the inductively coupled plasma Etaching device antenna part of other execution mode of the present invention is shown.
Fig. 5 illustrates other routine horizontal sectional view that the vertical wall that utilizes antenna chamber is separated state.
Fig. 6 illustrates the horizontal sectional view that the vertical wall that utilizes antenna chamber is separated the other example of state.
Symbol description: 1: main body container, 2: dielectric walls; 2a: cutting plate, 3: antenna chamber, 3a: sidewall, 4: process chamber, 5: vertical wall, 5a: cross part, 6: cell, 7: support shelf, 11: gas introduction port, 12: gas flow path, 13: gas vent, 14: gas supply pipe, 15,15 ': high frequency antenna, 15a: antenna sheet, 18: high frequency electric source, 20: treating-gas supply system, 22: pedestal, 30: exhaust gear, G:LCD glass substrate.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are illustrated.Fig. 1 is the vertical cross-section diagram that the inductively coupled plasma Etaching device of one embodiment of the present invention is shown, and Fig. 2 is the horizontal sectional view that its antenna chamber is shown.This device is used for when forming thin-film transistor on the LCD glass substrate metal film, ITO film, oxide-film etc. being carried out etching in for example LCD manufacturing.
This plasma Etaching device has the airtight main body container 1 of rectangle tubular that the aluminum or aluminum alloy crossed by anodized by conductive material, for example internal face forms.Main body container 1 can make up with decomposing, by earth connection 1a ground connection.Main body container 1 is divided into antenna chamber 3 and process chamber 4 by dielectric walls 2 upper and lower regions.Therefore, dielectric walls 2 constitutes the sky borehole wall of process chamber 4.Dielectric walls 2 is by Al
2O
3Deng formation such as pottery, quartz.
In the antenna chamber 3 of main body container 1, be provided with like this, make 2 vertical walls 5 form cross according to the mode of supporting respectively by opposed 2 oppose side wall 3a.Therefore, antenna chamber 3 is divided into 4 cells 6 by 2 vertical walls 5.The bottom of sidewall 3a and vertical wall 5 is provided with supports shelf 7, and the cutting plate 2a that dielectric walls 2 is divided into after 4 parts is positioned on the support shelf 7 of each cell 6.At each cutting plate 2a of dielectric walls 2 with support to get involved between the shelf 7 and sealing ring 8 is installed with gas-tight seal.These are fixing with bolt 9.Vertical wall 5 is for example same with main body container 1, and the aluminum or aluminum alloy of being crossed by anodized by the surface forms.
Form gas introduction port 11 in the central authorities of the roof 3b of antenna chamber 3.And as shown in Figure 3, the upper end of the cross part 5a that intersects from 2 vertical walls 5 and gas introduction port 11 continuous gas flow paths 12 stretch downwards.And, gas flow path 12 has the bottom at cross part 5a, along vertical wall flatly and be the horizontal stream 12a and a plurality of vertical stream 12b that extends from this criss-cross horizontal stream 12a that crosswise ground extends downwards, on the bottom of vertical wall 5, be formed with gas vent 13.Therefore a plurality of gas vents 13 are cross arrangement, from being the predetermined processing gas of showerhead ejection here.
On the other hand, 11 places are provided with gas supply pipe 14 at gas introduction port, so that be communicated with gas flow path 12.Gas supply pipe 14 connects to its outside from the courtyard of main body container 1, is connected with the treating-gas supply system 20 that comprises processing gas supply source and valve system etc.Thereby, in plasma etching, the processing gas of supplying with from treating-gas supply system 20 is through gas supply pipe 14 supply gas streams 12, again further by horizontal stream 12a and vertical stream 12b, the gas vent 13 that is provided with from the bottom of vertical wall 5 spray to process chamber 4 in, the etching of the predetermined film that forms on the LCD glass substrate G that supply is disposed in process chamber 4.
Be equipped with high frequency antenna 15 in the antenna chamber 3.Specifically, high frequency antenna 15 is divided into 4 antenna sheet 15a, and these antenna sheet 15a is provided in each cell 6 of antenna chamber 3, so that towards dielectric walls 2.These antenna sheet 15a is formed by the planar coil antenna that is rolled into the square spiral shape substantially, and the antenna sheet of adjacency is that the line of antenna twines along mutually opposite direction.The feeder rod used therein 16 that these antenna sheet 15a is an end with each cell 6 from antenna chamber 3 vertically extends upward is connected, and the other end is connected with main body container 1, through main body container 1 ground connection.
The adaptation 17 of the impedance and the high frequency transmission circuit impedance matching that make plasma is set on the roof 3b of antenna chamber 3, and the upper end of above-mentioned each feeder rod used therein 16 is connected with this adaptation 17.On the other hand, being provided with for example frequency that induction field forms usefulness at adaptation 17 places is the high frequency electric source 18 of 13.56MHz.
In plasma treatment, for example frequency of supplying with induction field formation usefulness to high frequency antenna 15 from high frequency electric source 18 is the High frequency power of 13.56MHz.Like this, the high frequency antenna 15 of High frequency power has so been supplied with in utilization, in process chamber 4, form induction field, by this induction field, from treating-gas supply system 20 through gas supply pipe 14, gas flow path 12 processing gaseous plasmaization from gas vent 13 ejections.Suitably set the output of high frequency electric source 18 at that time, be the enough values that produce plasma.
Below in process chamber 4, be provided with as being used for the pedestal 22 of the mounting table of mounting LCD glass substrate G, clamping dielectric walls 2 and opposed with high frequency antenna 15.Pedestal 22 is by conductive material, for example the aluminium crossed through anodized of surface constitutes.LCD glass substrate G in mounting on the pedestal 22 passes through electrostatic chuck (not shown) sorption on pedestal 22, maintenance.
By the feeder rod used therein 25a that is provided with in hollow leg 25, high frequency electric source 29 is connected in pedestal 22 through adaptation 28.The High frequency power of biasing usefulness, for example the High frequency power of frequency 3.2MHz is added on the pedestal 22 this high frequency electric source 29 in plasma treatment.Can introduce substrate G to the ion in the plasma that generates in the process chamber 4 effectively by this biasing with High frequency power.
In addition, in pedestal 22,, be provided with the temperature control device and the temperature sensor (all not shown) that form by the heater of ceramic heater etc. or cold medium stream etc. for the temperature of control basal plate G.Pillar 25 to the pipe arrangement or the distribution of these mechanisms or member also all passes through hollow exports to outside the main body container 1.
The bottom of process chamber 4 is connected with the exhaust gear 30 that comprises vacuum pump etc. through blast pipe 31, by this exhaust gear 30, process chamber 4 is carried out exhaust, in plasma treatment, set, maintain specified vacuum ambiance (for example 1.33Pa) in the process chamber 4.
Secondly, at the inductively coupled plasma Etaching device that constitutes shown in above, LCD glass substrate G is imposed processing during the plasma etch process move and be illustrated.
At first, under the state of opening gate valve 27a, by carrying mechanism (not shown) substrate G is moved in the process chamber 4 from taking out of inlet 27, be placed on the mounting surface of pedestal 22 after, by electrostatic chuck (not shown) substrate G is fixed on the pedestal 22.Then, will be from handling processing gas that gas supply system 20 supplies with in process chamber 4 when gas supply pipe 14, gas flow path 12 spray in process chamber 4 from gas vent 13, keep for example pressure environment atmosphere about 1.33Pa in the process chamber 4 by utilizing exhaust gear 30 in 31 pairs of process chambers 4 of blast pipe, to carry out vacuum exhaust, making.
Secondly, the high frequency of 13.56MHz is added on each antenna sheet 15a of high frequency antenna 15 through adaptation 17 and feeder rod used therein 16, in view of the above, in process chamber 4, forms uniform induction field through dielectric walls 2 from high frequency electric source 18.By the induction field of such formation, in process chamber 4, handle gaseous plasmaization, generate highdensity inductively coupled plasma.Ion utilization in the plasma of Sheng Chenging is imported into substrate G effectively from the High frequency power of 29 couples of pedestal 22 added 3.2MHz of high frequency electric source like this, and substrate is imposed uniform etching.
In this case, 2 vertical walls 5 are provided with according to forming cross, so that respectively by utilizing dielectric walls 2 to form that opposed 2 oppose side wall 3a support in the antenna chamber 3 of diapire, by this vertical wall 5 antenna chamber 3 is separated into 4 cells, corresponding with a plurality of cells dielectric walls 2 is divided into multi-disc, by the sidewall 3a of antenna chamber 3 and each cutting plate 2a of vertical wall 5 support dielectric walls 2, because supporting element is vertical wall, so support part of broadening dielectric walls 2 not, and do not thicken dielectric walls 2, can prevent to comprise dielectric walls 2, the warpage of separating the separation structure between process chamber 4 and the antenna chamber 3.
The invention is not restricted to above-mentioned execution mode, it is possible doing all distortion.For example, at above-mentioned execution mode from a high frequency electric source, give each antenna sheet 15a of the high frequency antenna 15 of configuration in each cell 6 through adaptation, power supply, but also can be as shown in Figure 4, on each cell 6, be provided with separately independently high frequency antenna 15 ', be provided with each high frequency antenna 15 ' corresponding a plurality of adaptations 17 ' and high frequency electric source 18 '.
At above-mentioned execution mode, vertical wall is set cross, but also can as shown in Figure 51 vertical wall 5 only be set, antenna chamber 3 is divided into two, in addition, also can dispose the multi-disc vertical wall abreast as shown in Figure 6, antenna chamber 3 is separated.
In addition,, be not limited to Etaching device, also go for other plasma processing apparatus such as sputter or CVD film forming though the situation that the present invention is applicable to Etaching device is shown by above-mentioned execution mode.As processed substrate LCD substrate, yet, the invention is not restricted to this, also go for the situation of other substrates such as process semiconductor wafers.
As described above, according to the present invention, owing to utilize the vertical wall supported by the sidewall of antenna chamber to be divided into a plurality of cells by the antenna chamber that dielectric walls forms diapire, with a plurality of cells are corresponding dielectric walls is divided into multi-disc, each cutting plate of dielectric walls is by the sidewall of aforementioned antenna chamber and aforementioned vertical wall support, support that important document is vertical wall, so support part of broadening dielectric walls not, and do not thicken dielectric walls, can prevent to comprise warpage dielectric walls, that separate the separation structure between process chamber and the antenna chamber.
Claims (4)
1. an inductive couple plasma processing unit is characterized by, and comprises with lower member:
Remain airtight, as processed substrate to be imposed plasma treatment process chamber;
In described process chamber, supply with the treating-gas supply system of handling gas;
To carrying out gas extraction system exhaust, that make formation decompression state in the described process chamber in the described process chamber;
Constitute the dielectric walls of the top wall of described process chamber;
Be arranged on the described dielectric walls high frequency antenna top, that be used for by supply high frequency electric power in described process chamber, forming induction field;
Be arranged on described process chamber top, form antenna chamber diapire, that accommodate described high frequency antenna by described dielectric walls; With
Described antenna chamber is separated into vertical wall a plurality of cells, that supported by described antenna chamber sidewall,
Described dielectric walls and the corresponding multi-disc that is divided into of described a plurality of cells, each cutting plate of described dielectric walls is by the sidewall and the described vertical wall support of described antenna chamber.
2. inductive couple plasma processing device according to claim 1 is characterized by, and described high frequency antenna has a plurality of antenna sheet of accommodating respectively in described a plurality of cells, from a high frequency electric source to described high frequency antenna supply high frequency electric power.
3. inductive couple plasma processing device according to claim 1 is characterized by, and described high frequency antenna is corresponding with described a plurality of cells and have a plurality ofly, has to these a plurality of high frequency antennas a plurality of high frequency electric sources of supply high frequency electric power respectively.
4. according to each described inductive couple plasma processing device of claim 1～3, it is characterized by, described vertical wall is separated described antenna chamber with cross, is divided into 4 cells.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002212562A JP3935401B2 (en) | 2002-07-22 | 2002-07-22 | Inductively coupled plasma processing equipment |
| JP2002212562 | 2002-07-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1477678A true CN1477678A (en) | 2004-02-25 |
| CN1320596C CN1320596C (en) | 2007-06-06 |
Family
ID=31884284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031460755A Expired - Lifetime CN1320596C (en) | 2002-07-22 | 2003-07-21 | Induction coupling plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3935401B2 (en) |
| KR (1) | KR101019818B1 (en) |
| CN (1) | CN1320596C (en) |
| TW (1) | TWI284367B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103108483A (en) * | 2011-11-15 | 2013-05-15 | 东京毅力科创株式会社 | High-frequency antenna circuit and inductively coupled plasma processing apparatus |
| CN111430210A (en) * | 2019-01-10 | 2020-07-17 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
| US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| JP2006073354A (en) * | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | Plasma treatment device |
| TWI287279B (en) * | 2004-09-20 | 2007-09-21 | Applied Materials Inc | Diffuser gravity support |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| KR100734773B1 (en) * | 2005-07-29 | 2007-07-04 | 주식회사 아이피에스 | Plasma Processing apparatus of Equipped Multi MICP |
| US8733279B2 (en) * | 2007-02-27 | 2014-05-27 | Applied Materials, Inc. | PECVD process chamber backing plate reinforcement |
| TWI348730B (en) | 2007-07-17 | 2011-09-11 | Ind Tech Res Inst | Method of fabricating polysilicon film |
| KR101507392B1 (en) * | 2008-07-19 | 2015-03-31 | 주식회사 뉴파워 프라즈마 | plasma reactor |
| KR101031784B1 (en) * | 2008-11-14 | 2011-04-29 | 김남진 | Plasma processing apparatus |
| KR101155121B1 (en) * | 2009-03-25 | 2012-06-11 | 도쿄엘렉트론가부시키가이샤 | Cover fixing member and cover fixing device of inductively coupled plasma processing apparatus |
| JP5578865B2 (en) * | 2009-03-25 | 2014-08-27 | 東京エレクトロン株式会社 | Cover fixing tool and cover fixing device for inductively coupled plasma processing apparatus |
| JP5606821B2 (en) * | 2010-08-04 | 2014-10-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP2012089334A (en) * | 2010-10-19 | 2012-05-10 | Tokyo Electron Ltd | Microwave plasma source and plasma processing apparatus |
| US9279179B2 (en) * | 2012-02-06 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi coil target design |
| US10170278B2 (en) * | 2013-01-11 | 2019-01-01 | Applied Materials, Inc. | Inductively coupled plasma source |
| KR102596797B1 (en) * | 2021-11-02 | 2023-11-02 | 피에스케이 주식회사 | Substrate processing apparatus and substrate processing method |
| WO2024142924A1 (en) * | 2022-12-27 | 2024-07-04 | 東京エレクトロン株式会社 | Plasma processing device and dielectric window |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
| JP4017274B2 (en) * | 1999-01-07 | 2007-12-05 | 松下電器産業株式会社 | Plasma processing method and apparatus |
| US6331754B1 (en) * | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
| JP2001110777A (en) * | 1999-10-05 | 2001-04-20 | Matsushita Electric Ind Co Ltd | Method and device for processing plasma |
-
2002
- 2002-07-22 JP JP2002212562A patent/JP3935401B2/en not_active Expired - Fee Related
-
2003
- 2003-05-14 TW TW092113126A patent/TWI284367B/en not_active IP Right Cessation
- 2003-07-18 KR KR1020030049342A patent/KR101019818B1/en not_active IP Right Cessation
- 2003-07-21 CN CNB031460755A patent/CN1320596C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103108483A (en) * | 2011-11-15 | 2013-05-15 | 东京毅力科创株式会社 | High-frequency antenna circuit and inductively coupled plasma processing apparatus |
| CN111430210A (en) * | 2019-01-10 | 2020-07-17 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
| CN111430210B (en) * | 2019-01-10 | 2023-05-12 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI284367B (en) | 2007-07-21 |
| KR20040010260A (en) | 2004-01-31 |
| JP3935401B2 (en) | 2007-06-20 |
| CN1320596C (en) | 2007-06-06 |
| JP2004055895A (en) | 2004-02-19 |
| KR101019818B1 (en) | 2011-03-04 |
| TW200402104A (en) | 2004-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1320596C (en) | Induction coupling plasma processing device | |
| KR100556983B1 (en) | Inductively coupled plasma processing apparatus | |
| CN101707186B (en) | Substrate placing stage and substrate processing apparatus | |
| KR100310249B1 (en) | Substrate Processing Equipment | |
| CN107154333B (en) | Substrate board treatment | |
| US8257501B2 (en) | Plasma doping device with gate shutter | |
| KR100269097B1 (en) | Wafer process apparatus | |
| KR101111494B1 (en) | Atomic deposition apparatus and atomic layer deposition method | |
| WO2010025253A2 (en) | Load lock chamber for large area substrate processing system | |
| TWI445076B (en) | Vacuum processing device | |
| US9011634B2 (en) | Plasma processing apparatus and plasma processing method | |
| CN102119437A (en) | Plasma processing apparatus, plasma processing method, and electronic device manufacturing method | |
| WO2021126172A1 (en) | High density plasma enhanced chemical vapor deposition chamber | |
| US6860711B2 (en) | Semiconductor-manufacturing device having buffer mechanism and method for buffering semiconductor wafers | |
| KR101666933B1 (en) | Antenna for inductively coupled plasma processing apparatus | |
| JP4503574B2 (en) | Inductively coupled plasma processing equipment | |
| KR100627785B1 (en) | Induction coupling type plasma processing apparatus | |
| US11817291B2 (en) | Faraday shield and apparatus for treating substrate | |
| JP4190949B2 (en) | Plasma processing equipment | |
| JP2002075882A (en) | Substrate treatment device, load lock chamber for the same, and cleaning method of load lock chamber in substrate treatment device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070606 |