CN113965699B - 图像处理方法、装置、电子设备及存储介质 - Google Patents
图像处理方法、装置、电子设备及存储介质 Download PDFInfo
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- CN113965699B CN113965699B CN202111199534.8A CN202111199534A CN113965699B CN 113965699 B CN113965699 B CN 113965699B CN 202111199534 A CN202111199534 A CN 202111199534A CN 113965699 B CN113965699 B CN 113965699B
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- 238000003672 processing method Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000000605 extraction Methods 0.000 claims abstract description 14
- 238000003384 imaging method Methods 0.000 claims description 48
- 230000004044 response Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000004590 computer program Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment
- H04N5/262—Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
- H04N5/2621—Cameras specially adapted for the electronic generation of special effects during image pickup, e.g. digital cameras, camcorders, video cameras having integrated special effects capability
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment
- H04N5/262—Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
- H04N5/2622—Signal amplitude transition in the zone between image portions, e.g. soft edges
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Image Processing (AREA)
- Studio Devices (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202111199534.8A CN113965699B (zh) | 2021-10-14 | 2021-10-14 | 图像处理方法、装置、电子设备及存储介质 |
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CN202111199534.8A CN113965699B (zh) | 2021-10-14 | 2021-10-14 | 图像处理方法、装置、电子设备及存储介质 |
Publications (2)
Publication Number | Publication Date |
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CN113965699A CN113965699A (zh) | 2022-01-21 |
CN113965699B true CN113965699B (zh) | 2023-08-29 |
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CN202111199534.8A Active CN113965699B (zh) | 2021-10-14 | 2021-10-14 | 图像处理方法、装置、电子设备及存储介质 |
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CN (1) | CN113965699B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910755A (zh) * | 2015-12-23 | 2017-06-30 | 意法半导体(R&D)有限公司 | 图像传感器配置 |
CN109089053A (zh) * | 2018-10-23 | 2018-12-25 | Oppo广东移动通信有限公司 | 图像传输方法、装置、电子设备和存储介质 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008228282A (ja) * | 2007-02-13 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 画像処理装置 |
JP5889323B2 (ja) * | 2011-10-12 | 2016-03-22 | キヤノン株式会社 | 撮像装置及び撮像装置の制御方法 |
JP6887853B2 (ja) * | 2017-04-03 | 2021-06-16 | キヤノン株式会社 | 撮像装置、その制御方法、プログラム |
US11196937B2 (en) * | 2019-11-25 | 2021-12-07 | Qualcomm Incorporated | High frame rate in high dynamic range processing |
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2021
- 2021-10-14 CN CN202111199534.8A patent/CN113965699B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910755A (zh) * | 2015-12-23 | 2017-06-30 | 意法半导体(R&D)有限公司 | 图像传感器配置 |
CN109089053A (zh) * | 2018-10-23 | 2018-12-25 | Oppo广东移动通信有限公司 | 图像传输方法、装置、电子设备和存储介质 |
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CN113965699A (zh) | 2022-01-21 |
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Address after: Room 59, 17th Floor, Science and Technology Innovation Building, No. 777 Zhongguan West Road, Zhuangshi Street, Ningbo City, Zhejiang Province, 315200 Patentee after: Aixin Yuanzhi Semiconductor Co.,Ltd. Country or region after: China Address before: Room 59, 17th Floor, Science and Technology Innovation Building, No. 777 Zhongguan West Road, Zhuangshi Street, Zhenhai District, Ningbo City, Zhejiang Province, 315200 Patentee before: Aixin Yuanzhi Semiconductor (Ningbo) Co.,Ltd. Country or region before: China Address after: Room 59, 17th Floor, Science and Technology Innovation Building, No. 777 Zhongguan West Road, Zhuangshi Street, Zhenhai District, Ningbo City, Zhejiang Province, 315200 Patentee after: Aixin Yuanzhi Semiconductor (Ningbo) Co.,Ltd. Country or region after: China Address before: 201702 room 1190, zone B, floor 11, building 1, No. 158 Shuanglian Road, Yangpu District, Shanghai Patentee before: Aisin Yuanzhi semiconductor (Shanghai) Co.,Ltd. Country or region before: China |